Patent application number | Description | Published |
20080308406 | Assemblies of anisotropic nanoparticles - Methods and compositions of matter are described for assemblies of anisotropic nanoparticles. A method, includes forming a substantially close packed dense layer by assembling a plurality of anisotropic nanoparticles, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction, wherein assembling includes mechanically interacting the plurality of anisotropic nanoparticles by imposing a delocalized force that defines a direction that is substantially perpendicular to a basal plane of the substantially closed packed dense layer; and imposing a fluctuating force to which the anisotropic nanoparticles respond, wherein fluctuations in a magnitude of the imposed force are sufficient to overcome a short range weak attractive force between members of the plurality of anisotropic nanoparticles with respect to anisotropic nanoparticles that are not substantially overlapping. The plurality of anisotropic nanoparticles are substantially aligned with respect to each other to define the substantially close packed dense layer and the substantially closed packed dense layer has a non-random shared crystallographic orientation that is substantially aligned with the basal plane of the substantially close packed dense layer. A composition of matter, includes a plurality of anisotropic nanoparticles that are in physical contact with one another, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction. The plurality of anisotropic nanoparticles are substantially aligned with respect to each other to define a substantially close packed dense layer having a non-random shared crystallographic orientation that is substantially aligned with a basal plane of the substantially close packed dense layer. | 12-18-2008 |
20080311028 | Assemblies of anisotropic nanoparticles - Methods and compositions of matter are described for assemblies of anisotropic nanoparticles. A method, includes forming a substantially close packed dense layer by assembling a plurality of anisotropic nanoparticles, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction, wherein assembling includes mechanically interacting the plurality of anisotropic nanoparticles by imposing a delocalized force that defines a direction that is substantially perpendicular to a basal plane of the substantially closed packed dense layer; and imposing a fluctuating force to which the anisotropic nanoparticles respond, wherein fluctuations in a magnitude of the imposed force are sufficient to overcome a short range weak attractive force between members of the plurality of anisotropic nanoparticles with respect to anisotropic nanoparticles that are not substantially overlapping. The plurality of anisotropic nanoparticles are substantially aligned with respect to each other to define the substantially close packed dense layer and the substantially closed packed dense layer has a non-random shared crystallographic orientation that is substantially aligned with the basal plane of the substantially close packed dense layer. A composition of matter, includes a plurality of anisotropic nanoparticles that are in physical contact with one another, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction. The plurality of anisotropic nanoparticles are substantially aligned with respect to each other to define a substantially close packed dense layer having a non-random shared crystallographic orientation that is substantially aligned with a basal plane of the substantially close packed dense layer. | 12-18-2008 |
20110189080 | Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom - Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide. | 08-04-2011 |
20110312160 | Liquid precursor for deposition of copper selenide and method of preparing the same - Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed. | 12-22-2011 |
20120094431 | Liquid precursor for deposition of indium selenide and method of preparing the same - Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed. | 04-19-2012 |
20120261626 | COMPOSITIONS INCLUDING CONTROLLED SEGREGATED PHASE DOMAIN STRUCTURES - A composition includes a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product. | 10-18-2012 |
20140087512 | LIQUID PRECURSOR FOR DEPOSITION OF COPPER SELENIDE AND METHOD OF PREPARING THE SAME - Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed. | 03-27-2014 |
20140170805 | Thermal Processing Utilizing Independently Controlled Elemental Reactant Vapor Pressures and/or Indirect Cooling - A machine includes a thermal ramp chamber; a thermal soak chamber coupled to the thermal ramp chamber; and a cooling chamber coupled to the thermal soak chamber. The cooling chamber can be an indirect cooling chamber including a thermal buffer that includes a substrate carrier. Each of the chambers can include an independently controlled elemental reactant source containing and supplying vapor having both i) independent control of a total vapor pressure of an elemental reactant containing vapor and ii) independent control of a partial vapor pressure of an elemental reactant vapor within that chamber. | 06-19-2014 |
20140209161 | Nanostructured CIGS Absorber Surface for Enhanced Light Trapping - A technique includes fabricating a layered precursor including: depositing a first film including a first indium gallium selenide compound on a substrate; then depositing a second film including a CuSe compound; then heating the substrate, the first film and the second film to convert the CuSe compound in the second film to a Cu | 07-31-2014 |
20140366946 | Multi-layer compound precursor with CuSe thermal conversion to Cu2-xSe for two-stage CIGS solar cell absorber synthesis - Fabricating a layered precursor includes depositing a first film including a first indium gallium selenide compound on a substrate; then depositing a second film including a first CuSe compound; then heating the substrate, the first film and the second film to convert the first CuSe compound in the second film to a first Cu | 12-18-2014 |