Patent application number | Description | Published |
20080220569 | METHOD FOR MANUFACTURING A FIELD EFFECT TRANSISTOR WITH AUTO-ALIGNED GRIDS - The method comprises steps consisting of:
| 09-11-2008 |
20090011562 | Process for Fabricating a Field-Effect Transistor with Self-Aligned Gates - A first gate, formed on a substrate, is surmounted by a hard layer designed, with first spacers surrounding the first gate, to act as etching mask to bound the channel and a pad that bounds a space subsequently used to form a gate cavity. The hard layer is preferably made of silicon nitride. Before flipping and bonding, a bounding layer, preferably made of amorphous silicon or polysilicon, is formed to bound drain and source areas. After flipping and bonding of the assembly on a second substrate, a second gate is formed in the gate cavity. At least partial silicidation of the bounding layer is then performed before the metal source and drain electrodes are produced. | 01-08-2009 |
20090286363 | METHOD FOR MAKING A TRANSISTOR WITH METALLIC SOURCE AND DRAIN - Method for making a field effect transistor comprising the following steps:
| 11-19-2009 |
20110003443 | METHOD FOR PRODUCING A TRANSISTOR WITH METALLIC SOURCE AND DRAIN - A method for producing a transistor with metallic source and drain including the steps of:
| 01-06-2011 |
20130052805 | METHOD OF PRODUCING A THREE-DIMENSIONAL INTEGRATED CIRCUIT - Method of producing an integrated electronic circuit comprising at least the steps of:
| 02-28-2013 |
20130214362 | METHOD OF PRODUCING A DEVICE WITH TRANSISTORS STRAINED BY MEANS OF AN EXTERNAL LAYER - A method of producing a microelectronic device with transistors wherein a strain layer is formed on a series of transistors and the strain exerted on at least one given transistor of said series is released by removing a sacrificial layer situated between said given transistor and said strain layer. | 08-22-2013 |
20130214363 | MANUFACTURING METHOD FOR A DEVICE WITH TRANSISTORS STRAINED BY SILICIDATION OF SOURCE AND DRAIN ZONES - A method for making a microelectronic device with transistors, in which silicided source and drain zones are formed to apply a compressive strain on the channel, in some transistors. | 08-22-2013 |
20140273480 | METHOD FOR PRODUCING A SUBSTRATE PROVIDED WITH EDGE PROTECTION - The method for producing a substrate provided with protection of its edges has a first step which is providing a substrate having a semiconductor material base. The substrate has opposite first and second main surfaces connected by a lateral surface. A first layer made from first protective material is then formed so as to coat the substrate. The first protective material is then etched on the lateral surface leaving a pattern of first protective material at least partially covering each of the first and second surfaces, and a second protective layer made from second protective material is then formed on the lateral surface devoid of the first protective material. After formation of the second protective layer, the first protective material is eliminated from the substrate. | 09-18-2014 |