Patent application number | Description | Published |
20140117308 | Electronic Device Containing Nanowire(s), Equipped with a Transition Metal Buffer Layer, Process for Growing at Least One Nanowire, and Process for Manufacturing a Device - The electronic device comprises a substrate ( | 05-01-2014 |
20140120637 | Process for Growing at Least One Nanowire Using a Transition Metal Nitride Layer Obtained in Two Steps - The process for growing at least one semiconductor nanowire ( | 05-01-2014 |
20150255677 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME - An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed. | 09-10-2015 |
20150279672 | PROCESS FOR GROWING AT LEAST ONE NANOWIRE USING A TRANSITION METAL NITRIDE LAYER OBTAINED IN TWO STEPS - The process for growing at least one semiconductor nanowire ( | 10-01-2015 |
20150295041 | ELECTRONIC DEVICE CONTAINING NANOWIRE(S), EQUIPPED WITH A TRANSITION METAL BUFFER LAYER, PROCESS FOR GROWING AT LEAST ONE NANOWIRE, AND PROCESS FOR MANUFACTURING A DEVICE - The electronic device comprises a substrate ( | 10-15-2015 |
20150340552 | OPTOELECTRONIC DEVICE COMPRISING MICROWIRES OR NANOWIRES - The invention relates to an optoelectronic device comprising microwires or nanowires, each having at least one active portion ( | 11-26-2015 |
20160111593 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME - An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed. | 04-21-2016 |
20160141451 | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR STRUCTURE - A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing a substrate including at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface; forming the at least one semiconductor structure in contact with the silicon carbide layer, the structure including at least one part, as a contact part, in contact with the surface of the silicon carbide layer, which includes gallium. | 05-19-2016 |