Patent application number | Description | Published |
20090162972 | METALLIZATION CONTACT STRUCTURES AND METHODS FOR FORMING MULTIPLE-LAYER ELECTRODE STRUCTURES FOR SILICON SOLAR CELLS - Metallization contact structures and methods for forming a multiple-layer electrode structure on a solar cell include depositing a conductive contact layer on a semiconductor substrate and depositing a metal bearing ink onto a portion of the conductive contact layer, wherein the exposed portions of the conductive contact layer are adjacent to the metal bearing ink. The conductive contact layer is patterned by removing the exposed portions of the conductive contact layer from the semiconductor substrate. The metal bearing ink is aligned with one or more openings in a dielectric layer of the semiconductor substrate and with unexposed portions of the conductive contact layer. The unexposed portions of the conductive contact layer are interposed between the metal bearing ink and the dielectric layer of the semiconductor substrate such that the conductive contact layer pattern is aligned with metal bearing ink. The semiconductor substrate is thermally processed to form a current carrying metal gridline by sintering the metal bearing ink. | 06-25-2009 |
20090190964 | SMART DONOR ROLLS USING INDIVIDUALLY ADDRESSABLE PIEZOELECTRIC ACTUATORS - Exemplary embodiments provide a roll member that includes one or more piezoelectric tape and methods for making and using the roll member. The piezoelectric tape can be flexible and include a plurality of piezoelectric elements configured in a manner that the piezoelectric elements can be addressed individually or as groups with various numbers of elements in each group. In an exemplary embodiment, the disclosed roll member can be used as a donor roll for a development system of an electrophotographic printing machine to create controlled and desired toner powder cloud for high quality image development, such as an image on image development in a hybrid scavengeless development (HSD) system. | 07-30-2009 |
20090190969 | DIRECT IMAGING SYSTEM WITH ADDRESSABLE ACTUATORS ON A DEVELOPMENT BELT - Exemplary embodiments provide a direct imaging system and methods for direct marking an image using the system. The disclosed direct imaging system can eliminate the creation of a latent image and can be used in an electrophotographic machine and related processes. Specifically, the direct imaging system can include a direct marking substrate (e.g., a printing substrate) and a development belt member closely spaced from the direct marking substrate. In one embodiment, the development belt member can include a plurality of actuator cells with each actuator cell controllably addressable to eject one or more toner particles adhered thereto. The ejected toner particles can transit the space between the donor belt member and the direct marking substrate, and directly marking onto the direct marking substrate forming an image. | 07-30-2009 |
20090239331 | METHODS FOR FORMING MULTIPLE-LAYER ELECTRODE STRUCTURES FOR SILICON PHOTOVOLTAIC CELLS - Methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating. | 09-24-2009 |
20100028054 | POWDERED TONER DIRECT MARKING APPARATUS - A marking apparatus including a traveling wave grid toner transport circuit structure for transporting powdered toner along a transport surface, and electromechanical elements for selectively enabling toner patches to be projected to an output medium by a projecting electric field. | 02-04-2010 |
20100059109 | Interdigitated Back Contact Silicon Solar Cells With Laser Ablated Grooves - Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions. | 03-11-2010 |
20100124619 | SOLAR CELL METALLIZATION USING INLINE ELECTROLESS PLATING - Inline methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings by printing electroless plating solution into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating. | 05-20-2010 |
20100130014 | TEXTURING MULTICRYSTALLINE SILICON - Techniques are disclosed for surface texturing multicrystalline silicon using drop jetting technology to form mask or etch patterns on a surface of a multicrystalline silicon substrate. | 05-27-2010 |
20100219047 | TRAVELING WAVE GRIDS WITH AGITATED SURFACE USING PIEZOELECTRIC EFFECT AND ACOUSTIC TRAVELING WAVES - A system for transporting particles includes a substrate and a plurality of spaced electrically conductive electrodes carried by the substrate. Further included is a carrier medium adapted for the retention and migration of particles disposed therein, wherein the carrier medium is in operational contact with the electrodes, and a vibration generator is positioned in relation to the substrate to impart vibrations into the carrier medium. In an alternative embodiment, the vibration generator is configured to generate an acoustic traveling wave, which includes a vibration component and a motivation component. | 09-02-2010 |
20110070676 | Interdigitated Back Contact Silicon Solar Cells Fabrication Using Diffusion Barriers - Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions. | 03-24-2011 |
20110070681 | Interdigitated Back Contact Silicon Solar Cells With Separating Grooves - Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions. | 03-24-2011 |
20120222735 | N-Type Silicon Solar Cell With Contact/Protection Structures - A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional silicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer. | 09-06-2012 |
20140041504 | Mechanical Method For Producing Micro- Or Nano-Scale Textures - A mechanical method for producing micro-scale and nano-scale textures that facilitates, for example, the cost-effective production of nanostructures on large-scale substrates, e.g., during the large-scale production of thin-film solar cells. A “scratcher” (multi-pointed abrasion mechanism) is maintained in a precise position relative to a target substrate such that micron-level features (protrusions) extending from the scratcher's base structure are precisely positioned to contact a surface material layer of the target substrate with a predetermined amount of force, and then moved relative to the substrate (e.g., by way of a conveying mechanism) while maintaining the pressing force such that the micron-level features define elongated parallel nano-scale grooves and/or form nano-scale ridges in the surface material layer (i.e., by mechanically displacing) portions of the surface material layer to form the nano-scale grooves/ridges). | 02-13-2014 |
20140238484 | N-TYPE SILICON SOLAR CELL WITH CONTACT/PROTECTION STRUCTURES - A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional suicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer. | 08-28-2014 |