Patent application number | Description | Published |
20090004371 | AMORPHOUS LITHIUM LANTHANUM TITANATE THIN FILMS MANUFACTURING METHOD - An amorphous lithium lanthanum titanate (LLTO) thin film is produced by the sol-gel method wherein a polymer is mixed with a liquid alcohol to form a first solution. A second solution is then prepared by mixing a lanthanum alkoxide with an alcohol. The first solution is then mixed with the lanthanum based second solution. A lithium alkoxide and a titanium alkoxide are then also added to the lanthanum based second solution. This process produces a batch of LLTO precursor solution. The LLTO precursor solution is applied to a substrate to form a precursor layer which is then dried. The coating techniques that may be used include spin coating, spraying, casting, dripping, and the like, however, the spin coating technique is the preferred method recited herein. | 01-01-2009 |
20090092903 | Low Cost Solid State Rechargeable Battery and Method of Manufacturing Same - A solid state Li battery and an all ceramic Li-ion battery are disclosed. The all ceramic battery has a solid state battery cathode comprised of a mixture of an active cathode material, an electronically conductive material, and a solid ionically conductive material. The cathode mixture is sintered. The battery also has a solid state battery anode comprised of a mixture of an active anode material, an electronically conductive material, and a solid ionically conductive material. The anode mixture is sintered. The battery also has a solid state separator positioned between said solid state battery cathode and said solid state battery anode. In the solid state Li battery the all ceramic anode is replaced with an evaporated thin film Li metal anode. | 04-09-2009 |
20100170699 | PASSIVATED THIN FILM AND METHOD OF PRODUCING SAME - A method of producing a passivated thin film material is disclosed wherein an insulating thin film layer ( | 07-08-2010 |
20110053001 | IONICALLY-CONDUCTIVE AMORPHOUS LITHIUM LANTHANUM ZIRCONIUM OXIDE - Amorphous lithium lanthanum zirconium oxide (LLZO) is formed as an ionically-conductive electrolyte medium. The LLZO comprises by percentage of total number of atoms from about 0.1% to about 50% lithium, from about 0.1% to about 25% lanthanum, from about 0.1% to about 25% zirconium, from about 30% to about 70% oxygen and from 0.0% to about 25% carbon. At least one layer of amorphous LLZO may be formed through a sol-gel process wherein quantities of lanthanum methoxyethoxide, lithium butoxide and zirconium butoxide are dissolved in an alcohol-based solvent to form a mixture which is dispensed into a substantially planar configuration, transitioned through a gel phase, dried and cured to a substantially dry phase. | 03-03-2011 |
20120196189 | AMORPHOUS IONICALLY CONDUCTIVE METAL OXIDES AND SOL GEL METHOD OF PREPARATION - Amorphous lithium lanthanum zirconium oxide (LLZO) is formed as an ionically-conductive electrolyte medium. The LLZO comprises by percentage of total number of atoms from about 0.1% to about 50% lithium, from about 0.1% to about 25% lanthanum, from about 0.1% to about 25% zirconium, from about 30% to about 70% oxygen and from 0.0% to about 25% carbon. At least one layer of amorphous LLZO may be formed through a sol-gel process wherein quantities of lanthanum methoxyethoxide, lithium butoxide and zirconium butoxide are dissolved in an alcohol-based solvent to form a mixture which is dispensed into a substantially planar configuration, transitioned through a gel phase, dried and cured to a substantially dry phase. | 08-02-2012 |
20130130131 | RECHARGEABLE LITHIUM AIR BATTERY HAVING ORGANOSILICON-CONTAINING ELECTROLYTE - A rechargeable lithium air battery comprises a non-aqueous electrolyte disposed between a spaced-apart pair of a lithium anode and an air cathode. The electrolyte includes including a lithium salt and an additive containing an alkylene group or a lithium salt and an organosilicon compound. The alkylene additive may be alkylene carbonate, alkylene siloxane, or a combination of alkylene carbonate and alkylene siloxane. The alkylene carbonate may be vinylene carbonate, butylene carbonate, or a combination of vinylene carbonate and butylene carbonate. The alkylene siloxane may be a polymerizable silane such as triacetoxyvinylsilane. In preferred embodiments, the organosilicon compound is a silane containing polyethyleneoxide side chain(s). | 05-23-2013 |
20130230777 | LITHIUM BASED ANODE WITH NANO-COMPOSITE STRUCTURE AND METHOD OF MANUFACTURING SUCH - An active anode ( | 09-05-2013 |
20140220449 | LITHIUM BASED ANODE WITH NANO-COMPOSITE STRUCTURE AND METHOD OF MANUFACTURING SUCH - An active anode ( | 08-07-2014 |
20150056520 | IMPREGNATED SINTERED SOLID STATE COMPOSITE ELECTRODE, SOLID STATE BATTERY, AND METHODS OF PREPARATION - An impregnated solid state composite cathode is provided. The cathode contains a sintered porous active material, in which pores of the porous material are impregnated with an inorganic ionically conductive amorphous solid electrolyte. A method for producing the impregnated solid state composite cathode involves forming a pellet containing an active intercalation cathode material; sintering the pellet to form a sintered porous cathode pellet; impregnating pores of the sintered porous cathode pellet with a liquid precursor of an inorganic amorphous ionically conductive solid electrolyte; and curing the impregnated pellet to yield the composite cathode. | 02-26-2015 |
20150333307 | HIGH CAPACITY SOLID STATE COMPOSITE CATHODE, SOLID STATE COMPOSITE SEPARATOR, SOLID-STATE RECHARGEABLE LITHIUM BATTERY AND METHODS OF MAKING SAME - A high capacity solid state composite cathode contains an active cathode material dispersed in an amorphous inorganic ionically conductive metal oxide, such as lithium lanthanum zirconium oxide and/or lithium carbon lanthanum zirconium oxide. A solid state composite separator contains an electronically insulating inorganic powder dispersed in an amorphous, inorganic, ionically conductive metal oxide. Methods for preparing the composite cathode and composite separator are provided. | 11-19-2015 |
Patent application number | Description | Published |
20080296586 | COMPOSITE WAFERS HAVING BULK-QUALITY SEMICONDUCTOR LAYERS AND METHOD OF MANUFACTURING THEREOF - Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate. | 12-04-2008 |
20100001293 | SEMICONDUCTOR DEVICES HAVING GALLIUM NITRIDE EPILAYERS ON DIAMOND SUBSTRATES - Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates. | 01-07-2010 |
20100105166 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING GALLIUM NITRIDE EPILAYERS ON DIAMOND SUBSTRATES - Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates. | 04-29-2010 |
20130183798 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING GALLIUM NITRIDE EPILAYERS ON DIAMOND SUBSTRATES USING INTERMEDIATE NUCLEATING LAYER - Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates. | 07-18-2013 |
Patent application number | Description | Published |
20120025714 | HIGH-STABILITY LIGHT SOURCE SYSTEM AND METHOD OF MANUFACTURING - A light source system and method that generates stable optical power over time and temperature for use in laser scanning, turbidity sensing, airborne-particle analysis, fog and visibility monitoring, blood-gas analysis and applications where light source output intensity changes less than one-half percent over a 50° C. range. The system includes a miniature semiconductor light emitter that can be powered by two AAA alkaline batteries for more than 100 hours and is about 1 cm | 02-02-2012 |
20130265584 | Temperature-stable incoherent light source - Embodiments generally relate to a light source and methods for minimizing temperature sensitivity of a light source light source. In one embodiment a light source includes a light-emitting diode, a light beam having an optical axis, a photodetector and a polarizer. The diode is operatively configured to emit the light beam. The beam splitter, positioned to intercept the light beam, includes a first optical surface operatively configured to reflect a first portion of the light beam and to transmit a second portion of the light beam therethrough. The photodetector is positioned to capture the first portion of the light beam after reflection by the beam splitter and operatively configured to generate photocurrent proportional to an intensity of that captured first portion. The polarizer is positioned between the diode and the beam splitter, and is operatively configured to polarize the light beam along a polarization direction perpendicular to its optical axis. | 10-10-2013 |
20140029083 | MODULATION AVERAGING REFLECTORS - Embodiments generally relate to an optical waveguide component configured for operation with amplitude modulated optical signals at a line rate. The optical waveguide component includes a first optical waveguide segment having a first port and a second port; and a plurality of second optical waveguides each forming a closed loop. Each of the second optical waveguides is electromagnetically coupled to the first optical waveguide exactly once, and each of the closed loops has a round trip time. A product of the line rate and each of the round-trip times is equal to or greater than unity. | 01-30-2014 |