Patent application number | Description | Published |
20130152853 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus | 06-20-2013 |
20140027787 | SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE - An SiC single crystal having at least one orientation region where a basal plane dislocation has a high linearity and is oriented to three crystallographically-equivalent <11-20> directions, and an SiC wafer and a semiconductor device which are manufactured from the SiC single crystal. The SiC single crystal can be manufactured by using a seed crystal in which the offset angle on a {0001} plane uppermost part side is small and the offset angle on an offset direction downstream side is large and growing another crystal on the seed crystal. | 01-30-2014 |
20140091325 | SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE - When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S | 04-03-2014 |
20140287539 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD - At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heater | 09-25-2014 |
20140291700 | SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE - An SiC single crystal includes a low dislocation density region (A) where the density of dislocations each of which has a Burgers vector in a {0001} in-plane direction (mainly a direction parallel to a <11-20> direction) is not more than 3,700 cm/cm | 10-02-2014 |
20140319539 | SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER - A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the carbon layer formation step, a carbon layer ( | 10-30-2014 |
20150090693 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD - A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole. | 04-02-2015 |
20150329967 | FILM-FORMING MANUFACTURING APPARATUS AND METHOD - It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters. | 11-19-2015 |