Aubuchon, US
Christopher Aubuchon, San Jose, CA US
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20090122162 | Imaging system with multi-state zoom and associated methods - An image capturing device may include a detector including a plurality of sensing pixels, and an optical system adapted to project a distorted image of an object within a field of view onto the sensing pixels, wherein the optical system expands the image in a center of the field of view and compresses the image in a periphery of the field of view, wherein a first number of sensing pixels required to realize a maximal zoom magnification {circumflex over (Z)} at a minimum resolution of the image capturing device is less than a square of the maximal zoom magnification times a second number of sensing pixels required for the minimum resolution. | 05-14-2009 |
20100295973 | DETERMINATE AND INDETERMINATE OPTICAL SYSTEMS - An optical system ( | 11-25-2010 |
Dennis C. Aubuchon, Arnold, MO US
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20080312442 | Process for Preparing Morphinan-6-One Products with Low Levels of Alpha, Beta-Unsaturated Ketone Compounds - The present invention generally relates to processes for preparing highly pure morphinan-6-one products. The processes involve reducing the concentration of α,β-unsaturated ketone compounds present as impurities in morphinan 6 one products or reaction mixtures including morphinan 6 one compounds by treatment with a sulfur-containing compound. (A) | 12-18-2008 |
20120059167 | PROCESSES FOR PREPARING MORPHINAN-6-ONE PRODUCTS WITH LOW LEVELS OF ALPHA BETA-UNSATURATED COMPOUNDS - The present invention generally relates to processes for preparing highly pure morphinan-6-one products. The processes involve reducing the concentration of α,β-unsaturated ketone compounds present as impurities in morphinan 6 one products or reaction mixtures including morphinan 6 one compounds by treatment with a sulfur-containing compound. (A) | 03-08-2012 |
20150148365 | Processes For Preparing Morphinan-6-One Products With Low Levels Of Alpha, Beta-Unsaturated Ketone Compounds - The present invention generally relates to processes for preparing highly pure morphinan-6-one products. The processes involve reducing the concentration of alpha, beta unsaturated ketone compounds present as impurities in morphinan 6 one products or reaction mixtures including morphinan 6 one compounds by treatment with a sulfur-containing compound. | 05-28-2015 |
Gordon Aubuchon, Houston, TX US
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20090013633 | Metal framing members - Methods of producing a metal framing member having a plurality of screw tunnels, metal framing members prepared using such methods, and metal framing systems using such metal framing members. The metal framing sheet in one aspect has an undulating surface where projections and associated depressions are formed on opposite sides of the metal sheet in a coordinated pattern. The metal sheets may be produced through the use of rolls having a variety of patterns and/or projections and recesses that the sheet metal is pressed between. In one aspect the rolls have a honeycomb pattern that is advantageous in many ways including enhanced screw retention, surface penetration, acoustical and thermal performance, sheet rigidity and load bearing capability. | 01-15-2009 |
Jeffrey Wayne Aubuchon, West Chester, OH US
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20140260109 | Manufacturing Process for Packaged Pet Food - Pet food bags, and methods of making the same, contain a seal that resists air exchange more than conventional bags thereby protecting nutritional ingredients that are susceptible to oxidation. | 09-18-2014 |
Joseph Aubuchon, San Jose, CA US
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20140342555 | DEPOSITION CHAMBERS WITH UV TREATMENT AND METHODS OF USE - Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas. | 11-20-2014 |
Joseph F. Aubuchon, San Jose, CA US
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20090053426 | COBALT DEPOSITION ON BARRIER SURFACES - Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process. | 02-26-2009 |
20100062149 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS - Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA). | 03-11-2010 |
20100062614 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS - Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT). | 03-11-2010 |
20140248772 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS - Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA). | 09-04-2014 |
20150087157 | ELECTROMAGNETIC DIPOLE FOR PLASMA DENSITY TUNING IN A SUBSTRATE PROCESSING CHAMBER - Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils. | 03-26-2015 |
20150255333 | COBALT DEPOSITION ON BARRIER SURFACES - Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process. | 09-10-2015 |
Matthew Aubuchon, Escondido, CA US
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20140060508 | Thermal Management of a Propulsion Circuit in an Electromagnetic Munition Launcher - Apparatus and methods provide thermal management of a propulsion circuit in an electromagnetic munition launcher. | 03-06-2014 |
Michael S. Aubuchon, Pismo Beach, CA US
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20150267884 | SHAFT-LESS RADIAL VANE TURBINE GENERATOR - A generator having a coupling adapted to couple at least two fluid conduits together; an axial flow channel defined by the hose coupling and having an axis; a conductive coil in the hose coupling enveloping the axial flow channel; a rotor rotatable relative to the conductive coil and encircled by the conductive coil; a plurality of vanes coupled to the rotor and projecting radially toward the axis, but not intersecting the axis. | 09-24-2015 |
Scott Aubuchon, Alpharetta, GA US
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20080255864 | METHOD AND COMPUTER PROGRAM PRODUCT FOR CREATING ON DEMAND COMMERCIAL SHIPPING INVOICES - A method and computer program product for creating an international commercial shipping invoice on demand. In various embodiments, the method comprises storing an electronic copy of a shipping entity's identification indicator, storing an electronic copy of the shipping entity's shipping signature, receiving invoice data relating to the parcel shipment, and subsequently combining the identification indicator and the shipping signature with the invoice data to generate an on demand signed international commercial shipping invoice. In various embodiments, a signed international commercial shipping invoice may be generated by a parcel shipment carrier subsequent to receiving invoice data. In other embodiments, an international commercial shipping invoice may be generated by a customs broker upon request by an importing agent during customs processing. In any respect, the present invention reduces the time and costs associated with creating signed paper copies of international commercial invoices by separately capturing the individual components of an international commercial shipping invoice, and allowing these components to be subsequently assembled, upon demand, to generate the completed invoice. | 10-16-2008 |