Patent application number | Description | Published |
20090136658 | Niobium 2-Ethylhexanoate Derivative, Method Of Producing The Derivative, Organic Acid Metal Salt Composition Containing The Derivative, And Method Of Producing Thin Film Using The Composition - The present invention provides a niobium 2-ethylhexanoate derivative having a niobium content of from 13 to 16 mass % and a carbon content within a range of from 50 to 58 mass %, the niobium 2-ethylhexanoate derivative consisting only of: niobium atoms, oxygen atoms, and 2-ethylhexanoic acid residues; the niobium 2-ethylhexanoate derivative can be produced by reacting pentakis(alkoxy)niobium with 2-ethylhexanoic acid; further, the organic acid metal salt composition of the present invention includes the niobium 2-ethylhexanoate derivative, a metal precursor other than niobium, and at least one kind of an organic solvent; and the thin film including a niobium element and metal other than niobium can be formed on a substrate by applying the organic acid metal salt composition on the substrate and heating the substrate with the applied organic acid metal salt composition. | 05-28-2009 |
20100159128 | Niobium 2-ethylhexanoate derivative, method of producing the derivative, organic acid metal salt composition containing the derivative, and method of producing thin film using the composition - The present invention provides a niobium 2-ethylhexanoate derivative having a niobium content of from 13 to 16 mass % and a carbon content within a range of from 50 to 58 mass %, the niobium 2-ethylhexanoate derivative consisting only of: niobium atoms, oxygen atoms, and 2-ethylhexanoic acid residues; the niobium 2-ethylhexanoate derivative can be produced by reacting pentakis(alkoxy)niobium with 2-ethylhexanoic acid; further, the organic acid metal salt composition of the present invention includes the niobium 2-ethylhexanoate derivative, a metal precursor other than niobium, and at least one kind of an organic solvent; and the thin film including a niobium element and metal other than niobium can be formed on a substrate by applying the organic acid metal salt composition on the substrate and heating the substrate with the applied organic acid metal salt composition. | 06-24-2010 |
20100247765 | METAL COMPOUND, MATERIAL FOR CHEMICAL VAPOR PHASE GROWTH, AND PROCESS FOR FORMING METAL-CONTAINING THIN FILM - A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. | 09-30-2010 |
20110237440 | COMPOSITION FOR FORMING THICK OXIDE SUPERCONDUCTOR FILM AND PROCESS FOR PRODUCING THICK TAPE-SHAPED OXIDE SUPERCONDUCTOR FILM - Disclosed is a composition for forming a thick oxide superconductor film, the oxide being an RE-BA-Cu based oxide, wherein RE is at least one element selected from the group consisting of Y, Nd, Sm, Gd, Eu, Yb, Pr, and Ho. The composition contains an RE salt of a keto acid having 4 to 8 carbon atoms as an RE component, barium trifluoroacetate as a Ba component, at least one copper salt selected from the group consisting of a copper salt of a branched saturated aliphatic carboxylic acid having 6 to 16 carbon atoms and a copper salt of an alicyclic carboxylic acid having 6 to 16 carbon atoms as a Cu component, and an organic solvent dissolving these metal salt components. In the composition, the RE to Ba to Cu molar ratio is 1:1.3 to 2.2:2.4 to 3.6 and the content of the organic solvent is 25% to 80% by weight | 09-29-2011 |
20120251724 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-04-2012 |
20130323413 | ZINC OXIDE FILM-FORMING COMPOSITION, ZINC OXIDE FILM PRODUCTION METHOD, AND ZINC COMPOUND - Disclosed are a composition for forming a zinc oxide-based film, said composition containing, as an essential component, a zinc compound represented by the following formula (1): | 12-05-2013 |
20140309456 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-16-2014 |
20140316164 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-23-2014 |