| Patent application number | Description | Published |
|---|
| 20080239185 | ACTIVE MATRIX DISPLAY AND METHOD FOR PRODUCING THE SAME - A method for producing a display comprising: forming a plurality of pixels arrayed on a flexible substrate and independently driven by TFTs, wherein the TFTs are formed in such a manner that the direction of the channel length L between the source and drain of each TFT is the direction of two orthogonal directions on the substrate in which the substrate has a smaller dimensional change ratio than the other direction. When the TFTs include a switching TFT and a driving TFT, the TFTs are formed in such a manner that the direction of the channel length between the source and drain of at least the driving TFT is the direction of the two orthogonal directions on the substrate in which the substrate has a smaller dimensional change ratio than the other direction. | 10-02-2008 |
| 20100073268 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND PATTERNING METHOD - An organic electroluminescent display device includes a driving TFT and pixels which are formed by organic electroluminescent elements and provided in a pattern on a substrate of the TFT. The driving TFT includes at least a substrate, a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode; the driving TFT further includes a resistive layer between the active layer and at least one of the source electrode and the drain electrode; and the pixels are formed in a pattern by a laser transfer method. A patterning method by a laser transfer method for producing the fine pixels is also provided. | 03-25-2010 |
| 20100117999 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - An organic electroluminescent display device includes at least a driving TFT and pixels which are formed by organic electroluminescent elements and are provided on a substrate of the TFT. The driving TFT includes at least a substrate, a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode. The driving TFT further includes a resistive layer between the active layer and at least one of the source electrode and the drain electrode. The pixels include at least one color-modified pixel which has a color filter that modifies the emission color of the color-modified pixel, and which emits light of the modified color. | 05-13-2010 |
| 20100314618 | THIN FILM TRANSISTOR, METHOD OF PRODUCING THE SAME, ELETCTROOPTIC APPARATUS, AND SENSOR - A thin film transistor includes: a substrate; and, on the substrate, an oxide semiconductor film which serves as an active layer and contains In, Ga, and Zn, a gate electrode, a gate insulating film, a source electrode, and a drain electrode, wherein, when a molar ratio of In, Ga, and Zn in the oxide semiconductor film is expressed as In:Ga:Zn=(2.0−x):x:y, wherein 0.0| 12-16-2010 | |
| 20100320458 | IGZO-BASED OXIDE MATERIAL AND METHOD OF PRODUCING IGZO-BASED OXIDE MATERIAL - The invention provides an IGZO-based oxide material and a method of producing the same, the IGZO-based oxide material being represented by a composition formula of In | 12-23-2010 |
| 20100320459 | THIN FILM TRANSISTOR AND METHOD OF PRODUCING THIN FILM TRANSISTOR - The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In | 12-23-2010 |
| 20110006300 | ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE SAME, DISPLAY AND SENSOR - A method of manufacturing an electronic device includes: preparing a film-attached substrate including a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is | 01-13-2011 |
| 20110042668 | AMORPHOUS OXIDE SEMICONDUCTOR MATERIAL, FIELD-EFFECT TRANSISTOR, AND DISPLAY DEVICE - There is provided an amorphous oxide semiconductor material including an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and b<2 and c<4b−3.2 and c>−5b+8 and 1≦c≦2. | 02-24-2011 |
| 20110127410 | OPTICAL SENSOR, OPTICAL SENSOR ARRAY, OPTICAL SENSOR DRIVING METHOD, AND OPTICAL SENSOR ARRAY DRIVING METHOD - An optical sensor that is a transistor which includes a gate electrode including a semiconductor material where the carrier concentration is 1.0×10 | 06-02-2011 |
| 20110290310 | SOLAR CELL AND SOLAR CELL MANUFACTURING METHOD - A solar cell capable of restricting carrier loss and yields higher energy conversion efficiency than was conventionally possible and a method of producing a solar cell enabling formation of a light absorbing layer containing quantum dots through a low-temperature process using a coating or printing method requiring no vacuum equipment or complicated apparatuses. The solar cell includes a light absorbing layer containing quantum dots in a matrix layer, and the light absorbing layer is connected to an N-type semiconductor layer on one side and to a P-type semiconductor layer on the other side. In the light absorbing layer, the quantum dots are made of nanocrystalline semiconductor and arranged 3-dimensionally uniformly enough and spaced regularly so that a plurality of wave functions lie on one another between adjacent quantum dots to form intermediate bands. The matrix layer is formed of amorphous IGZO. | 12-01-2011 |
| 20130328045 | FIELD EFFECT TRANSISTOR, DISPLAY DEVICE , SENSOR, AND METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR - A field effect transistor including: a gate insulating film; an oxide semiconductor layer that serves as an active layer and whose main structural elements are Sn, Zn and O, or Sn, Ga, Zn and O; and an oxide intermediate layer that is disposed between the gate insulating film and the oxide semiconductor layer, and whose resistivity is higher than that of the oxide semiconductor layer. | 12-12-2013 |
| 20140103341 | METHOD FOR PRODUCING AMORPHOUS OXIDE THIN FILM AND THIN FILM TRANSISTOR - A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm | 04-17-2014 |
| 20140131696 | METHOD FOR PRODUCING FIELD EFFECT TRANSISTOR, FIELD EFFECT TRANSISTOR, DISPLAY DEVICE, IMAGE SENSOR, AND X-RAY SENSOR - There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film. | 05-15-2014 |
| 20140134795 | SEMICONDUCTOR ELEMENT MANUFACTURING METHOD - There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0| 05-15-2014 | |
| 20140231798 | THIN FILM TRANSISTOR AND METHOD OF PRODUCING THE SAME, DISPLAY DEVICE, IMAGE SENSOR, X-RAY SENSOR, AND X-RAY DIGITAL IMAGING DEVICE - A thin film transistor includes a gate electrode; a gate insulating film which contacts the gate electrode; an oxide semiconductor layer which includes a first region represented by In(a) Ga(b) Zn(c) O(d), wherein 00, 00, and a second region represented by In(p) Ga(q) Zn(r) O(s), wherein q/(p+q)>0.250, p>0, q>0, r>0, and s>0, and located farther than the first region with respect to the gate electrode and which is arranged facing the gate electrode with the gate insulating film provided therebetween; and a source electrode and a drain electrode which are arranged so as to be apart from each other and are capable of being electrically conducted through the oxide semiconductor layer. | 08-21-2014 |
