Patent application number | Description | Published |
20090057139 | Pot-Shaped Copper Sputtering Target and Manufacturing Method Thereof - Provided is a pot-shaped copper sputtering target manufactured with die forging, wherein the Vickers hardness Hv at all locations of the inner surface of the pot-shaped target is 70 or greater. With this pot-shaped copper sputtering target, the average crystal grain size in the target structure is 65 μm or less. Further, the inner surface of the pot-shaped target comprises crystalline orientations of (220), (111), (200), (311) obtained by X-ray diffraction, and the crystalline orientation of the face subject to erosion of the pot-shaped target is of a (220) primary orientation. An object of the present invention is to obtain a manufacturing method of a high quality sputtering target by improving and devising the forging process and heat treatment process to make the crystal grain size refined and uniform, and to obtain a high-quality sputtering target. | 03-05-2009 |
20090134021 | Sputtering Target - Provided is a tantalum or a tantalum alloy target capable of shortening the burn-in time and minimizing the fluctuation in the deposition speed throughout the target life, whereby the production efficiency of semiconductors in the sputtering process can be improved and stabilized, and the production cost can be significantly reduced. With tantalum or tantalum-based alloy sputtering target, provided is a sputtering target, wherein FWHM (full width of half maximum) of a {200} crystal plane measured by X-ray diffraction of the sputtered outermost surface is 0.1 to 0.6, or a sputtering target according to claim | 05-28-2009 |
20090277788 | Sputtering Target/Backing Plate Bonded Body - Provided is a sputtering target/backing plate assembly having a structure such that pure copper is embedded in a backing plate position at the central portion of the target, within sputtering target/copper-zinc alloy backing plate bonded bodies. Consequently, provided is a simple structure of sputtering target/backing plate capable of sufficiently accommodating further high-power sputtering without deteriorating the characteristics of a copper-zinc alloy backing plate that is inexpensive and excels in strength and anti-eddy current characteristics. | 11-12-2009 |
20110123389 | High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis - High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, 0-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility. | 05-26-2011 |
20110163447 | High-Purity Copper or High-Purity Copper Alloy Sputtering Target, Process for Manufacturing the Sputtering Target, and High-Purity Copper or High-Purity Copper Alloy Sputtered Film - Provided is a high-purity copper or high-purity copper alloy sputtering target of which the purity is 6N or higher and in which the content of the respective components of P, S, O and C is 1 ppm or less, wherein the number of nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less is 30,000 inclusions/g or less. As a result of using high-purity copper or high-purity copper alloy from which harmful inclusions of P, S, C and O system have been reduced as the raw material and controlling the existence form of nonmetal inclusions, the present invention addresses a reduction in the percent defect of wirings of semiconductor device formed by sputtering a high-purity copper target so as to ensure favorable repeatability. | 07-07-2011 |
20110266145 | Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity). | 11-03-2011 |
20120031756 | Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity). | 02-09-2012 |
20120037501 | Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of molybdenum as an essential component, and having a purity of 99.998% or more excluding molybdenum and gas components. Additionally provided is a tantalum sputtering target according to the above further containing 0 to 100 mass ppm of niobium, excluding 0 mass ppm thereof, and having a purity of 99.998% or more excluding molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target that has a uniform and fine structure and which yields stable plasma and superior film evenness, in other words, uniformity. | 02-16-2012 |
20130092534 | Tantalum Sputtering Target - Provided is a tantalum sputtering target, in which 1 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and of which the purity excluding boron and gas components is 99.998% or higher. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity). | 04-18-2013 |
20130098759 | Tantalum Sputtering Target - Provided is a tantalum sputtering target, in which 30 mass ppm or more and 100 mass ppm or less of oxygen is contained as an essential component, and of which purity excluding oxygen and gas components is 99.998% or higher. Additionally provided is a tantalum sputtering target, wherein an average crystal grain size is 120 μm or less and variation in the crystal grain size is ±20% m or less. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity). | 04-25-2013 |
20130302205 | High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis - High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, O-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility. | 11-14-2013 |
20140097084 | High-Purity Copper-Manganese-Alloy Sputtering Target - Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration. | 04-10-2014 |
20140110849 | Copper-Titanium Alloy Sputtering Target, Semiconductor Wiring Line Formed Using the Sputtering Target, and Semiconductor Element and Device Each Equipped with the Semiconductor Wiring Line - A copper-titanium alloy sputtering target comprising 3 at % or more and less than 15 at % of Ti and a remainder made up of Cu and unavoidable impurities, wherein a variation (standard deviation) in hardness is within 5.0 and a variation (standard deviation) in electric resistance is within 1.0 in an in-plane direction of the target. Provided are: a sputtering target for forming a copper-titanium alloy wiring line for semiconductors capable of causing the copper alloy wiring line for semiconductors to be equipped with a self-diffusion suppressive function, effectively preventing contamination around the wiring line caused by diffusion of active Cu, improving electromigration (EM) resistance, corrosion resistance and the like, enabling the arbitrary formation of a barrier layer in a simple manner, and uniformizing film properties; a copper-titanium alloy wiring line for semiconductors; and a semiconductor element and a device each equipped with the semiconductor wiring line. | 04-24-2014 |
20140158532 | HIGH-PURITY COPPER-MANGANESE-ALLOY SPUTTERING TARGET - Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt. % of Mn, 2 wt ppm or less of C, and the remainder being Cu and inevitable impurities, wherein in formation of a film on a wafer by sputtering the target, the number of particles composed of C, at least one element selected from Mn, Si, and Mg, or a compound composed of C and at least one element selected from Mn, Si, and Mg and having a diameter of 0.20 μm or more is 30 or less on average. Particle generation during sputtering can be effectively suppressed by thus adding an appropriate amount of Mn element to copper and controlling the amount of carbon. In particular, a high-purity copper-manganese-alloy sputtering target that is useful for forming semiconductor copper alloy line having a self-diffusion suppression function is provided. | 06-12-2014 |
20140251802 | TITANIUM TARGET FOR SPUTTERING - A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics. | 09-11-2014 |
20140284211 | High Purity Copper-Manganese Alloy Sputtering Target - A high purity copper-manganese alloy sputtering target containing 0.05 to 20 wt % of Mn and, excluding additive elements, remainder being Cu and unavoidable impurities, wherein the target contains 0.001 to 0.06 wtppm of P and 0.005 to 5 wtppm of S, and further contains Ca and Si, and a total content of P, S, Ca, and Si is 0.01 to 20 wtppm. The incorporation of appropriate amounts of Mn as well as Ca, P, Si, and S in copper improves the machinability that is required in the stage of producing a target to facilitate the manufacture (workability) of the target, improves the smoothness of the target surface, and inhibits the generation of particles during sputtering. Thus, provided is a high purity copper-manganese alloy sputtering target which is particularly useful for improving the yield and reliability of semiconductor products that progress toward miniaturization and integration. | 09-25-2014 |
20140318953 | SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR - A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×10 | 10-30-2014 |
20140360869 | HIGH-PURITY COPPER-CHROMIUM ALLOY SPUTTERING TARGET - Provided is a high-purity copper-chromium alloy sputtering target comprising 0.1 to 10 wt % of Cr and the remainder being Cu and inevitable impurities, wherein when the number of precipitated Cr grains in a 100 μm square area is counted at different five areas randomly selected on the surface of the target, the difference between the largest and the smallest numbers of counted precipitated Cr grains is less than 40. The term “precipitated Cr grains” refers to the grains each having a Cr content of 70% or more and having a grain size of 1 to 20 μm. Thus, a thin film having excellent uniformity can be formed by adding an appropriate amount of a Cr element to copper and reducing the in-plane Cr variation of the sputtering target. In particular, the invention provides a high-purity copper-chromium alloy sputtering target that is useful for improving the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration. | 12-11-2014 |