Patent application number | Description | Published |
20100055895 | Electrically conductive structure on a semiconductor substrate formed from printing - Provided are methods for forming an electrically conductive structure of a desired three-dimensional shape on a substantially planar surface of a substrate, e.g., a semiconductor wafer. Typically, the particulate matter is deposited in a layer-by-layer manner and adhered to selected regions on the substrate surface. The particulate matter may be deposited to produce a mold for forming the structure and/or to produce the structure itself. A three-dimensional printer with associated electronic data may be used without the need of a lithographic mask or reticle. | 03-04-2010 |
20100084744 | Thermal processing of substrates with pre- and post-spike temperature control - Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods. | 04-08-2010 |
20100140768 | Systems and processes for forming three-dimensional circuits - Provided are systems and processes for forming a three-dimensional circuit on a substrate. A radiation source produces a beam that is directed at a substrate having an isolating layer interposed between circuit layers. The circuit layers communicate with reach other via a seed region exhibiting a crystalline surface. At least one circuit layer has an initial microstructure that exhibits electronic properties unsuitable for forming circuit features therein. After being controllably heat treated, the initial microstructure of the circuit layer having unsuitable properties is transformed into one that exhibits electronic properties suitable for forming circuit feature therein. Also provided are three-dimensional circuit structures optionally formed by the inventive systems and/or processes. | 06-10-2010 |
20110089523 | SYSTEMS AND PROCESSES FOR FORMING THREE-DIMENSIONAL CIRCUITS - Provided are systems and processes for forming a three-dimensional circuit on a substrate. A radiation source produces a beam that is directed at a substrate having an isolating layer interposed between circuit layers. The circuit layers communicate with reach other via a seed region exhibiting a crystalline surface. At least one circuit layer has an initial microstructure that exhibits electronic properties unsuitable for forming circuit features therein. After being controllably heat treated, the initial microstructure of the circuit layer having unsuitable properties is transformed into one that exhibits electronic properties suitable for forming circuit feature therein. Also provided are three-dimensional circuit structures optionally formed by the inventive systems and/or processes. | 04-21-2011 |
20110298093 | Thermal Processing of Substrates with Pre- and Post-Spike Temperature Control - Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods. | 12-08-2011 |
20120111838 | Thermal Processing of Substrates with Pre- and Post-Spike Temperature Contro - Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods. | 05-10-2012 |
20130267096 | Systems for and methods of laser-enhanced plasma processing of semiconductor materials - Systems for and methods of laser-enhanced plasma processing of semiconductor materials are disclosed. The method includes supporting a semiconductor material in a processing chamber interior and subjecting the semiconductor material to a plasma process. The method also includes simultaneously heating the wafer surface with a laser beam through a window in the processing chamber to increase the reaction rate of the plasma process. Other methods include performing laser heating of the semiconductor material before or after the plasma process but while the semiconductor material resides in the same chamber interior. | 10-10-2013 |
20130278109 | Betavoltaic power sources for mobile device applications - A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime. | 10-24-2013 |
20140021826 | Betavoltaic power sources for transportation applications - A betavoltaic power source for transportation devices and applications is disclosed, wherein the device having a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the transportation device over its useful lifetime. | 01-23-2014 |
20140238958 | Systems and methods for material processing using light-emitting diodes - Systems and methods for processing a material layer supported by a substrate using a light-source assembly that includes LED light sources each formed from an array of LEDs. The material layer is capable of undergoing a photo-process having a temperature-dependent reaction rate. Some of the LEDs emit light of a first wavelength that initiate the photo-process while some of the LEDs emit light of a second wavelength that heats the substrate. The heat from the substrate then heats the material layer, which increases the temperature-dependent reaction rate of the photo-process. | 08-28-2014 |
20150041431 | Methods of laser processing photoresist in a gaseous environment - Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process. | 02-12-2015 |