Patent application number | Description | Published |
20090058331 | Semiconductor Power Converter - A semiconductor power converter includes a power converter for converting direct current to three-phase alternating current or vice versa; a means for detecting a current in an alternating current side of the power converter; a means for providing a current reference in the alternating current side of the power converter; a current controller for calculating a voltage reference in the alternating current side of the power converter to match the current reference and a value of the detected current; and a pulse width modulation means for controlling the power converter through pulse width modulation based on the voltage reference, wherein the current reference is used in place of the value of the detected current for at least one phase current among three phase currents in the alternating current side. | 03-05-2009 |
20090146592 | POSITION SENSORLESS CONTROLLER FOR PERMANENT MAGNET MOTOR - In a calculation for estimating axis error in a permanent magnet motor, a d-axis commanded voltage value is added to the product of three signals, which are a q-axis detected current value or commanded current value, an inductance value, and an estimated speed value, and then the resulting value is divided by the product of a commanded speed value ω | 06-11-2009 |
20090322262 | Controller For Permanent Magnet Synchronous Motor and Motor Control System - A motor control system includes a power converter, a vector controller for controlling the power converter, an axial error estimating operation for estimating an axial error which is a deviation between the phase estimation value and phase value of the motor, and a rotational speed estimating computing unit | 12-31-2009 |
20100231148 | Torque Controller for Permanent Magnet Synchronous Motor - When output voltage V | 09-16-2010 |
20110006715 | Control Unit and Control Method for Permanent Magnet Synchronous Motor - If magnitude relations between the output terminal voltage based on a DC negative terminal of the inverter and a threshold voltage that is a fixed value are compared, polarity thereof is changed at a predetermined rotor phase. The magnitude relation, for example, is detected by an inexpensive and simple apparatus such as a level shift circuit and a NOT circuit. The rotor phase of the permanent magnet synchronous motor is inferred on the basis of changes in the magnitude relation and if it is differentiated, a rotation speed is inferred. If the inferred values of the rotor phase and rotation speed are fed back to synchronous operation or vector control, the free-running permanent magnet synchronous motor is restarted. | 01-13-2011 |
20110292700 | POWER CONVERSION DEVICE AND METHOD FOR CONTROLLING THEREOF - In a power conversion device that includes a PWM converting means for generating a PWM pulse by comparing three-phase voltage commands with a triangular wave carrier signal, a power converter for converting between a DC voltage and a three-phase AC voltage by driving a switching element according to the PWM pulse, a current detecting means for detecting a pulsed current flowing through a DC bus conductor of a main circuit, and a voltage command correcting means for correcting three-phase voltage commands, which corrects the three-phase voltage commands so that a line voltage value between the maximum phase and an intermediate phase and a line voltage value between the intermediate phase and the minimum phase are each equal to or larger than a predetermined value, the maximum phase, intermediate phase, and minimum phase being determined in correspondence to momentary values of the three-phase voltage commands arranged in descending order, if the voltage command is outside an allowable upper limit or lower limit, not only the voltage command for the maximum phase and/or the minimum phase but also the voltage command for the intermediate phase are corrected. | 12-01-2011 |
Patent application number | Description | Published |
20100151323 | ELECTRODE, ELECTRODE PASTE AND ELECTRONIC PARTS USING THE SAME - The objects of the present invention are to provide a copper-base electrode which can be calcined in an oxidative atmosphere, e.g., in air, like a silver electrode, and is less expensive than a silver electrode; an electrode paste; and electronic parts using it. The other objects of the present invention are to provide a copper-base electrode which can be calcined in an inert gas atmosphere, e.g., in nitrogen, at low temperature; an electrode paste; and electronic parts using it. | 06-17-2010 |
20100180934 | LOW SOFTENING POINT GLASS COMPOSITION, BONDING MATERIAL USING SAME AND ELECTRONIC PARTS - A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower. | 07-22-2010 |
20100307802 | Wiring Member, Method of Manufacturing the Wiring Member and Electronic Element - A wiring member comprising a substrate, a copper wiring layer having an electrical resistivity of not larger than 4×10 | 12-09-2010 |
20110001094 | ELECTROCONDUCTIVE MATERIAL AND POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION SECONDARY BATTERY USING THE SAME - Disclosed is an electroconductive material which contains at least a vanadium oxide and a phosphorus oxide, and has a crystalline structure composed of a crystalline phase and an amorphous phase, in which the crystalline phase contains a monoclinic vanadium-containing oxide, and a volume of the crystalline phase is larger than that of the amorphous phase. | 01-06-2011 |
20110315937 | CONDUCTIVE PASTE AND ELECTRONIC PART EQUIPPED WITH ELECTRODE WIRING FORMED FROM SAME - Provided is a conductive paste which contains an inexpensive metal, such as copper or aluminum, as an electrode wiring material and has oxidation resistance that enables the paste to withstand a high-temperature process performed in an oxidizing atmosphere and an electronic part equipped with electrode wiring formed from the paste. The electronic part in accordance with the present invention is equipped with electrode wiring that comprises a conductive glass phase containing transition metals and phosphorus, metal particles, and none of the substances prohibited by the RoHS directive. The electronic part is characterized in that each of the transition metals contained in the conductive glass phase is present in the state of having a plurality of oxidation numbers and that the proportion of the atoms which have the largest oxidation number for each transition metal satisfies a given relationship. | 12-29-2011 |
20120063076 | GLASS COMPOSITION AND COVERING AND SEALING MEMBERS USING SAME - A glass composition according to the present invention comprises: transition metals; phosphorus; barium; and zinc, the transition metals including: vanadium; and tungsten and/or iron, the glass composition not containing substances included in the JIG level A and B lists, an softening point of the glass composition being from 430 to 530° C., an average linear expansion coefficient of the glass composition being from 6 to 9 ppm/° C. at temperatures from 30 to 250° C. | 03-15-2012 |
20120067415 | GLASS COMPOSITION, ELECTRICALLY CONDUCTIVE PASTE COMPOSITION COMPRISING SAME, ELECTRODE WIRING MEMBER, AND ELCTRONIC COMPONENT - A glass composition according to the present invention comprises: phosphorus, vanadium and at least one transition metal selected from a group consisting of tungsten, iron, and manganese, the glass composition not containing substances included in the JIG level A and B lists, a softening point of the glass composition being 550° C. or lower. | 03-22-2012 |
20120125670 | Cu-Al ALLOY POWDER, ALLOY PASTE UTILIZING SAME, AND ELECTRONIC COMPONENT - In an electronic component having a wiring and/or an electrode prepared through firing of a paste or in an electronic component having a wiring in contact with a glass or glass ceramic member, provided is an electronic component using a Cu-based wiring material which less suffers from increase in electric resistance due to oxidation, which less causes bubbles in the glass or glass ceramic, and has satisfactory migration resistance. The Cu—Al alloy powder includes a Cu—Al alloy powder including Cu and, preferably, 50 percent by weight or less of Al; and an aluminum oxide film having a thickness of 80 nm or less and being present on the surface of the Cu—Al alloy powder. The powder, when compounded with a glass or glass ceramic material to give a paste, can be used to form wiring (interconnections), electrodes, and/or contact members. | 05-24-2012 |
20120161273 | THERMOELECTRIC CONVERSION MATERIAL - A thermoelectric conversion material is provided, in which only a desired crystal is selectively precipitated. An M | 06-28-2012 |
20120164537 | POSITIVE ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND MAGNESIUM SECONDARY BATTERY USING THE SAME - In a positive electrode active material for a magnesium secondary battery and a magnesium secondary battery using it, there is contained a powder particle containing a crystal phase having a structure formed with aggregation of a plurality of crystallites, and amorphous phases formed between the crystallites themselves; the amorphous phases contain at least one kind of a metal oxide selected from a vanadium oxide, an iron oxide, a manganese oxide, a nickel oxide and a cobalt oxide; and the crystal phase and the amorphous phases use the positive electrode active material enabling to store and release magnesium ions. | 06-28-2012 |
20120285733 | ELECTRONIC COMPONENT PROVIDED WITH CU-AL-CO-BASED ALLOY ELECTRODE OR WIRING - An object of the present invention is to provide an electronic component using a Cu-based conductive material that can suppress oxidization even in a heat treatment in an oxidizing atmosphere and that can suppress an increase in an electrical resistance. In an electronic component having an electrode or a wiring, a ternary alloy made from three elements consisting of Cu, Al, and Co is used as a Cu-based wiring material that can prevent oxidization of the electrode or the wiring. Specifically, part or the whole of the electrode or the wiring has a chemical composition in which an Al content is 10 at % to 25 at %, a Co content is 5 at % to 20 at %, and the balance is composed of Cu and unavoidable impurities, and the chemical composition represents a ternary alloy in which two phases of a Cu solid solution formed by Al and Co being dissolved into Cu and a CoAl intermetallic compound coexist together. | 11-15-2012 |
20130015410 | POSITIVE ELECTRODE ACTIVE MATERIALAANM Hashiba; YujiAACI NaritaAACO JPAAGP Hashiba; Yuji Narita JPAANM Yoshimura; KeiAACI InzaiAACO JPAAGP Yoshimura; Kei Inzai JPAANM Tachizono; ShinichiAACI NaritaAACO JPAAGP Tachizono; Shinichi Narita JPAANM Naito; TakashiAACI FunabashiAACO JPAAGP Naito; Takashi Funabashi JPAANM Aoyagi; TakuyaAACI HitachiAACO JPAAGP Aoyagi; Takuya Hitachi JPAANM Fujieda; TadashiAACI MitoAACO JPAAGP Fujieda; Tadashi Mito JP - A lithium ion secondary battery has a high cycle retention rate, and has its battery capacity increased. A positive electrode active material is used which includes a crystal phase having a structure formed by collecting a plurality of crystallites | 01-17-2013 |
20130126864 | SEMICONDUCTOR JUNCTION ELEMENT, SEMICONDUCTOR DEVICE USING IT, AND MANUFACTURING METHOD OF SEMICONDUCTOR JUNCTION ELEMENT - In order to provide a semiconductor junction element consisted of an oxide semiconductor glass, which does not contain a toxic element and rare metal element, and various semiconductor devices using it, semiconductor glasses which contain vanadium oxide and have different polarities are connected each other in a semiconductor junction element of the present invention. Moreover, a semiconductor glass containing vanadium oxide is connected to an element semiconductor or a compound semiconductor which have different polarity from the semiconductor glass. Furthermore, a semiconductor glass containing vanadium oxide is connected to a metal. | 05-23-2013 |
20130333748 | LOW SOFTENING POINT GLASS COMPOSITION, BONDING MATERIAL USING SAME ADN ELECTRONIC PARTS - A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower. | 12-19-2013 |