Patent application number | Description | Published |
20090035902 | INTEGRATED METHOD OF FABRICATING A MEMORY DEVICE WITH REDUCED PITCH - Provided is a method of fabricating a memory device. A substrate including an array region and a peripheral region is provided. A first feature and a second feature are formed in the array region. The first feature and the second feature have a first pitch. A plurality of spacers abutting each of the first feature and the second feature are formed. The plurality of spacers have a second pitch. A third feature in the peripheral region and a fourth and fifth feature in the array region are formed concurrently. The forth and fifth feature have the second pitch. | 02-05-2009 |
20140113222 | Mask for Use in Lithography - A mask, or photomask, is used in lithography systems and processes. The mask includes a first polygon of a first state and a second polygon of a second state. The mask also includes a field of the first state and a third polygon of the second state, and in the field. The first and second states are different, and the first and second polygons are located outside of the field. | 04-24-2014 |
20140268087 | Lithography and Mask for Resolution Enhancement - A lithography process in a lithography system includes loading a mask having multiple mask states and having a mask pattern consisting of a plurality of polygons and a field. Different mask states are assigned to adjacent polygons and the field. The lithography process further includes configuring an illuminator to generate an illumination pattern on an illumination pupil plane of the lithography system; configuring a pupil filter on a projection pupil plane of the lithography system with a filtering pattern determined according to the illumination pattern; and performing an exposure process to a target with the illuminator, the mask, and the pupil filter. The exposure process produces diffracted light and non-diffracted light behind the mask and the pupil filter removes most of the non-diffracted light. | 09-18-2014 |
20140272678 | Structure and Method for Reflective-Type Mask - The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer formed on the substrate; a capping layer formed on the reflective multilayer and having a hardness greater than about 8; and an absorber layer formed on the capping layer and patterned according to an integrated circuit layout. | 09-18-2014 |
20140272679 | Extreme Ultraviolet Lithography Process and Mask - An extreme ultraviolet lithography (EUVL) process is disclosed. The process comprises receiving a mask. The mask includes a low thermal expansion material (LTEM) substrate, a reflective multilayer (ML) over one surface of the LTEM substrate, a first region having a phase-shifting layer over the reflective ML, and a second region having no phase-shifting layer over the reflective ML. The EUVL process also comprises exposing the mask by a nearly on-axis illumination with partial coherence less than 0.3 to produce diffracted light and non-diffracted light, removing at least a portion of the non-diffracted light, and collecting and directing the diffracted light and the not removed non-diffracted light by a projection optics box (POB) to expose a target. | 09-18-2014 |
20140272680 | Method For Mask Fabrication And Repair - A method for repairing a phase-defect region in a patterned mask for extreme ultraviolet lithography (EUVL) is disclosed. A patterned mask for EUVL is received. The patterned mask includes an absorptive region having an absorption layer over a defect-repairing-enhancement (DRE) layer, a reflective region having the DRE layer without the absorption layer on top of it, a defect and a phase-defect region resulting from the defect and intruding the reflective region. A location and a shape of the phase-defect region is determined. A portion or portions of the DRE layer in the reflective region is removed according to the location and the shape of the phase-defect region to compensate the effect of the phase-defect region. | 09-18-2014 |
20140272683 | Method Of Fabricating Mask - A method for fabricating an extreme ultraviolet (EUV) mask includes providing a low thermal expansion material (LTEM) layer. A reflective multiple-layer (ML) is deposited over the LTEM layer. A flowable-photosensitive-absorption-layer (FPhAL) is spin coated over the reflective ML. The FPhAL is patterned by a lithography process to form a patterned absorption layer. | 09-18-2014 |
20140272686 | Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same - A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate and a patterned absorption layer disposed over the reflective multilayer. The patterned absorption layer has a mask image region and a mask border region. The exemplary mask also includes a mask border frame disposed over the mask border region. The mask border frame has a top surface and a bottom surface. The top surface is not parallel to the bottom surface. | 09-18-2014 |
20140342272 | Method to Define Multiple Layer Patterns With a Single Exposure by E-Beam Lithography - The present disclosure provides a method that includes forming a first resist layer on a substrate; forming a second resist layer over the first resist layer; and performing an electron-beam (e-beam) lithography exposure process to the first resist layer and the second resist layer, thereby forming a first latent feature in the first resist layer and a second latent feature in the second resist layer. | 11-20-2014 |
20140342564 | Photomask With Three States For Forming Multiple Layer Patterns With A Single Exposure - The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern. | 11-20-2014 |
20140377693 | Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same - A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location. | 12-25-2014 |
20150037712 | Extreme Ultraviolet (EUV) Mask, Method Of Fabricating The EUV Mask And Method Of Inspecting The EUV Mask - An out-of-band (OoB) suppression layer is applied on a reflective multiplayer (ML) coating, so as to avoid the OoB reflection and to enhance the optical contrast at 13.5 nm A material having a low reflectivity at wavelength of 193-257 nm, for example, silicon carbide (SiC), is used as the OoB suppression layer. A method of fabricating an EUV mask having the OoB suppression layer and a method of inspecting an EUV mask having the OoB suppression are also provided. | 02-05-2015 |
20150064611 | Extreme Ultraviolet (Euv) Mask And Method Of Fabricating The Euv Mask - A Cu-containing material is provided as an absorber layer of an EUV mask. With the absorber layer of the Cu-containing material, the same lithography performance of a conventional absorber in 70 nm thickness of TaBN can be achieved by only a 30-nm thickness of the absorber layer according to the various embodiments of the present disclosure. Furthermore, the out-off-band (OOB) flare of the radiation light in 193-257 nm can be reduced so as to achieve the better lithography performance. | 03-05-2015 |
20150072271 | Extreme Ultraviolet Lithography Process and Mask - A system and process of an extreme ultraviolet lithography (EUVL) is disclosed. An EUVL process includes receiving a mask pair having a same pattern. The mask pair includes an extreme ultraviolet (EUV) mask and a low EUV reflectivity mask. A first exposure process is performed by using the EUV mask to expose a substrate. A second exposure process is performed by using the low EUV reflectivity mask to expose the same substrate. The first exposure process is conducted according to a first exposure dose matrix and the second exposure process is conducted according to a second exposure dose matrix. | 03-12-2015 |