| Patent application number | Description | Published |
|---|
| 20110086994 | METHODS FOR PREPARING BENZODITHIOPHENES - Methods of adding substituents to a benzodithiophene are disclosed. A benzodithiophene is reacted with a reagent to directly add the substituent to the benzene core of the benzodithiophene. This method eliminates steps from prior process and eliminates the need for hydrogenation, allowing for a safer and more scaleable process. The resulting benzodithiophenes are suitable for use in semiconductor polymers and have no loss of performance. | 04-14-2011 |
| 20110224402 | METHODS FOR PREPARING BENZODITHIOPHENES - Methods of adding substituents to a benzodithiophene are disclosed. A benzodithiophene is reacted with a reagent to directly add the substituent to the benzene core of the benzodithiophene. This method eliminates steps from prior process and eliminates the need for hydrogenation, allowing for a safer and more scaleable process. The resulting benzodithiophenes are suitable for use in semiconductor polymers and have no loss of performance. | 09-15-2011 |
| 20110260114 | SEMICONDUCTING COMPOSITION - The present application discloses, in various embodiments, semiconducting layer compositions comprising a non-amorphous semiconductor material and a molecular glass. Electronic devices, such as thin-film transistors, are also disclosed. The semiconducting layer compositions exhibit good film-forming properties and high mobility. | 10-27-2011 |
| 20110260283 | DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS - An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and an infrared absorbing agent. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric polymer. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The infrared absorbing agent allows the dielectric composition to attain a temperature that is significantly greater than the temperature attained by the substrate during curing. This difference in temperature allows the dielectric layer to be cured at relatively high temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer. | 10-27-2011 |
| 20120141757 | DIELECTRIC COMPOSITION - An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition comprises a dielectric material and a low surface tension additive. The low surface tension additive allows for the formation of a thin, smooth dielectric layer with fewer pinholes and enhanced device yield. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. | 06-07-2012 |
| 20120142515 | DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS - An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer. | 06-07-2012 |
| 20120161109 | SMALL MOLECULE SEMICONDUCTOR - Disclosed is a small molecule semiconductor of Formula (I): | 06-28-2012 |
| 20120161110 | SEMICONDUCTOR COMPOSITION - An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor of Formula (I): | 06-28-2012 |
| 20120205628 | SEMICONDUCTING COMPOSITION - A compound of Formula (I): | 08-16-2012 |
| 20120205629 | SEMICONDUCTOR COMPOUND - A semiconducting tetrahydroacridinoacridine compound of Formula (I): | 08-16-2012 |
| 20120205630 | SEMICONDUCTOR COMPOUND - A thiaxanthenothiaxanthene compound of Formula (I): | 08-16-2012 |
| 20120261648 | SEMICONDUCTOR COMPOSITION - An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability. | 10-18-2012 |
| 20120313081 | ELECTRONIC DEVICE - An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The semiconducting layer has been deposited on an alignment layer that has been aligned in the direction between the source and drain electrodes. The resulting device has increased charge carrier mobility. | 12-13-2012 |
| 20130029034 | PROCESS FOR PRODUCING SILVER NANOPARTICLES - A process for producing silver nanoparticles includes receiving a first mixture comprising a silver salt, an organoamine, a first solvent, and a second solvent; and reacting the first mixture with a reducing agent solution to form organoamine-stabilized silver nanoparticles. The polarity index of the first solvent is less than 3.0, and the polarity index of the second solvent is higher than 3.0. The nanoparticles are more dispersible or soluble in the first solvent. | 01-31-2013 |
| 20130084644 | THIN-FILM TRANSISTORS FOR CHEMICAL SENSOR APPLICATIONS - A chemical sensor is disclosed. The chemical sensor is an electronic device including in specific embodiments a first transistor and a second transistor. The first transistor includes a semiconducting layer made of a first semiconductor and carbon nanotubes. The second transistor includes a semiconducting layer made of a second semiconductor, and does not contain carbon nanotubes. The two transistors vary in their response to chemical compounds, and the differing response can be used to determine the identity of certain chemical compounds. The chemical sensor can be useful as a disposable sensor for explosive compounds such as trinitrotoluene (TNT). The electronic device is used in conjunction with an analyzer that processes information generated by the electronic device. | 04-04-2013 |
| 20130140494 | SEMICONDUCTOR COMPOSITION - A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and a non-aromatic halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. Preferably, the non-aromatic halogenated hydrocarbon solvent contains at least 2 carbon atoms and at least 3 halogen atoms. | 06-06-2013 |
| 20130193379 | ISOTHIOINDIGO-BASED POLYMERS - A polymer of Formula (I) | 08-01-2013 |
| 20130193380 | BI-INDOLINE-DITHIONE POLYMERS - A polymer of Formula (I) | 08-01-2013 |
| 20130221288 | PROCESSES FOR PRODUCING PALLADIUM NANOPARTICLE INKS - A process for preparing a palladium nanoparticle ink comprises reacting a reaction mixture comprising a palladium salt, a stabilizer, a reducing agent, and an optional solvent to directly form the palladium nanoparticle ink. During the formation of the palladium nanoparticle ink, the palladium nanoparticles are not isolated from the reaction mixture. | 08-29-2013 |
| 20140114002 | DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS - An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer. | 04-24-2014 |
| 20140158946 | SEMICONDUCTOR COMPOSITES COMPRISING CARBON NANOTUBES AND DIKETOPYRROLOPYRROLE-THIOPHENE BASED COPOLYMERS - A semiconductor composition includes a semiconducting polymer containing a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. An electronic device contains a semiconductor layer including a semiconductor composition having a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. A semiconductor composition contains a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety, a solvent selected from the group consisting of tetrachloroethane, dichlorobenzene, chlorobenzene, chlorotoluene, and a mixture thereof, and a carbon nanotube. | 06-12-2014 |
| 20140200322 | PROCESSES FOR PREPARING DIKETOPYRROLOPYRROLE COPOLYMERS - Processes for preparing diketopyrrolopyrrole (DPP) copolymers are disclosed. A Suzuki polycondensation method is used in which a DPP monomer is reacted with an aryl comonomer using a palladium catalyst in a solvent. The solvent contains an organic phase and an aqueous phase. Reaction conditions are optimized. | 07-17-2014 |
| 20140204159 | MIXED ORGANOSILOXANE NETWORKS FOR TUNABLE SURFACE PROPERTIES FOR BLANKET SUBSTRATES FOR INDIRECT PRINTING METHODS - A crosslinked siloxane composition contains the polymerization product of a mixture containing from about 2 to about 12 alkoxysilane precursor materials, where at least one of the alkoxysilane precursor materials is a hydrophilic alkoxysilane precursor material, and at least one of the alkoxysilane precursor materials is a hydrophobic alkoxysilane precursor material. A method of printing an image to a substrate involves applying an inkjet ink to an intermediate transfer member using an inkjet printhead, spreading the ink onto the transfer member, inducing a property change of the ink, and transferring the ink to a substrate, where the intermediate transfer member comprises a crosslinked siloxane composition containing the polymerization product of a mixture comprising from about 2 to about 12 alkoxysilane precursor materials, where at least one of the precursor materials is hydrophilic and at least one is hydrophobic. | 07-24-2014 |
| 20140209840 | THIXOTROPIC COMPOSITION - A thixotropic conductive composition is disclosed that can be used to form conductive features on an electronic device. The thixotropic composition comprises a conjugated polymer, a solvent, and multi-wall carbon nanotubes. The conjugated polymer and the solvent are capable of forming a thixotropic fluid. This enables excellent stability of the carbon nanotubes in the composition at a very high loading. The composition has a long shelf life. | 07-31-2014 |
| 20140285570 | FORMULATION COMPOSITION FOR FLUORINATED ORGANOSILOXANE NETWORK - A formulation composition for preparing a print head face plate coating includes a sol containing a mixture of monomers including at least one fluoroalkoxysilane monomer; a solvent; a catalyst; and water. The formulation composition is stable towards gelation for more than 1.5 hours. A method of preparing a print head involves preparing a formulation composition containing a sol prepared from a mixture of monomers including at least one fluoroalkoxysilane monomer, a solvent, a catalyst, and water; applying the formulation composition as a sol on a surface of the print head; and curing the formulation composition to form a crosslinked siloxane layer on the print head. A method of printing involves using the print head to apply inkjet ink to a substrate. | 09-25-2014 |
| 20140354746 | BLANKET MATERIALS FOR INDIRECT PRINTING METHODS - An intermediate transfer member containing a layer of a siloxyfluorocarbon networked polymer. A method of preparing an intermediate transfer member including mixing a coating solution containing siloxyfluorocarbon precursor materials; applying the coating solution as a sol on a substrate; curing the coating solution on the substrate to form an intermediate transfer member containing a layer of a siloxyfluorocarbon networked polymer. The surface free energy of the intermediate transfer member may be from about 10 mN/m to about 40 mN/m. A method of printing an image to a substrate includes applying an inkjet ink to an intermediate transfer member containing a layer of a siloxyflurocarbon networked polymer; spreading the ink onto the intermediate transfer member; inducing a property change of the ink; and transferring the ink to a substrate. | 12-04-2014 |
| 20140377457 | METHOD OF FORMING METAL NANOPARTICLE DISPERSION AND DISPERSION FORMED THEREBY - A metal nanoparticle dispersion is made by mixing ingredients. The ingredients comprise a solvent; a plurality of metal nanoparticles, the metal nanoparticles comprising an oxide formed thereon; and a reducing agent. The reducing agent is included in an amount sufficient to react with the oxide to significantly increase a conductivity of a metal film that is formable from the nanoparticle dispersion using a deposition and heating process compared with the conductivity of a metal film formable from the same nanoparticle composition without the reducing agent using the same deposition and heating process. Methods for making the metal nanoparticle dispersion, as well as for making a film from the dispersion, are also disclosed. | 12-25-2014 |
| 20150021526 | SEMICONDUCTOR COMPOSITION - A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and an aromatic non-halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. The aromatic non-halogenated aromatic hydrocarbon solvent contains sidechains having at least 2 carbon atoms and the aromatic ring contains at least 3 hydrogen atoms. | 01-22-2015 |
