Patent application number | Description | Published |
20090261391 | Complementary Metal Oxide Semiconductor Integrated Circuit Using Raised Source Drain and Replacement Metal Gate - A complementary metal oxide semiconductor integrated circuit may be formed with a PMOS device formed using a replacement metal gate and a raised source drain. The raised source drain may be formed of epitaxially deposited silicon germanium material that is doped p-type. The replacement metal gate process results in a metal gate electrode and may involve the removal of a nitride etch stop layer. | 10-22-2009 |
20110147842 | MULTI-GATE SEMICONDUCTOR DEVICE WITH SELF-ALIGNED EPITAXIAL SOURCE AND DRAIN - A channel strained multi-gate transistor with low parasitic resistance and method of manufacturing the same. A gate stack may be formed over a semiconductor fin having a gate-coupled sidewall height (H | 06-23-2011 |
20120138886 | SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES - Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other. | 06-07-2012 |
20120161202 | JUNCTIONLESS ACCUMULATION-MODE DEVICES ON PROMINENT ARCHITECTURES, AND METHODS OF MAKING SAME - A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy. | 06-28-2012 |
20130313513 | SEMICONDUCTOR DEVICES HAVING MODULATED NANOWIRE COUNTS - Semiconductor devices having modulated nanowire counts and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a plurality of nanowires disposed above a substrate and stacked in a first vertical plane with a first uppermost nanowire. A second semiconductor device has one or more nanowires disposed above the substrate and stacked in a second vertical plane with a second uppermost nanowire. The second semiconductor device includes one or more fewer nanowires than the first semiconductor device. The first and second uppermost nanowires are disposed in a same plane orthogonal to the first and second vertical planes. | 11-28-2013 |
20130320294 | COMMON-SUBSTRATE SEMICONDUCTOR DEVICES HAVING NANOWIRES OR SEMICONDUCTOR BODIES WITH DIFFERING MATERIAL ORIENTATION OR COMPOSITION - Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such common-substrate devices are described. For example, a semiconductor structure includes a first semiconductor device having a first nanowire or semiconductor body disposed above a crystalline substrate. The first nanowire or semiconductor body is composed of a semiconductor material having a first global crystal orientation. The semiconductor structure also includes a second semiconductor device having a second nanowire or semiconductor body disposed above the crystalline substrate. The second nanowire or semiconductor body is composed of a semiconductor material having a second global crystal orientation different from the first global orientation. The second nanowire or semiconductor body is isolated from the crystalline substrate by an isolation pedestal disposed between the second nanowire or semiconductor body and the crystalline substrate. | 12-05-2013 |
20130320448 | SEMICONDUCTOR DEVICES HAVING THREE-DIMENSIONAL BODIES WITH MODULATED HEIGHTS - Semiconductor devices having three-dimensional bodies with modulated heights and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a first semiconductor body disposed above a substrate. The first semiconductor body has a first height and an uppermost surface with a first horizontal plane. The semiconductor structure also includes a second semiconductor device having a second semiconductor body disposed above the substrate. The second semiconductor body has a second height and an uppermost surface with a second horizontal plane. The first and second horizontal planes are co-planar and the first and second heights are different. | 12-05-2013 |
20130320455 | SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION - Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body. | 12-05-2013 |
20130334572 | JUNCTIONLESS ACCUMULATION-MODE DEVICES ON DECOUPLED PROMINENT ARCHITECTURES - A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy. | 12-19-2013 |
20140001560 | ISOLATED AND BULK SEMICONDUCTOR DEVICES FORMED ON A SAME BULK SUBSTRATE | 01-02-2014 |
20140035059 | SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS - Semiconductor devices having metallic source and drain regions are described. For example, a semiconductor device includes a gate electrode stack disposed above a semiconducting channel region of a substrate. Metallic source and drain regions are disposed above the substrate, on either side of the semiconducting channel region. Each of the metallic source and drain regions has a profile. A first semiconducting out-diffusion region is disposed in the substrate, between the semiconducting channel region and the metallic source region, and conformal with the profile of the metallic source region. A second semiconducting out-diffusion region is disposed in the substrate, between the semiconducting channel region and the metallic drain region, and conformal with the profile of the metallic drain region. | 02-06-2014 |
20140042386 | NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS - Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires. | 02-13-2014 |
20140077305 | GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME - Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate. | 03-20-2014 |
20140084342 | STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY OR LOCALLY ISOLATED SUBSTRATES - Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional channel region is disposed above the insulating structure. Source and drain regions are disposed on either side of the three-dimensional channel region and on an epitaxial seed layer. The epitaxial seed layer is composed of a semiconductor material different from the three-dimensional channel region and disposed on the insulating structure. A gate electrode stack surrounds the three-dimensional channel region with a portion disposed on the insulating structure and laterally adjacent to the epitaxial seed layer. | 03-27-2014 |
20140084370 | THREE-DIMENSIONAL GERMANIUM-BASED SEMICONDUCTOR DEVICES FORMED ON GLOBALLY OR LOCALLY ISOLATED SUBSTRATES - Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional germanium-containing body is disposed on a semiconductor release layer disposed on the insulating structure. The three-dimensional germanium-containing body includes a channel region and source/drain regions on either side of the channel region. The semiconductor release layer is under the source/drain regions but not under the channel region. The semiconductor release layer is composed of a semiconductor material different from the three-dimensional germanium-containing body. A gate electrode stack surrounds the channel region with a portion disposed on the insulating structure and laterally adjacent to the semiconductor release layer. | 03-27-2014 |
20140131660 | UNIAXIALLY STRAINED NANOWIRE STRUCTURE - Uniaxially strained nanowire structures are described. For example, a semiconductor device includes a plurality of vertically stacked uniaxially strained nanowires disposed above a substrate. Each of the uniaxially strained nanowires includes a discrete channel region disposed in the uniaxially strained nanowire. The discrete channel region has a current flow direction along the direction of the uniaxial strain. Source and drain regions are disposed in the nanowire, on either side of the discrete channel region. A gate electrode stack completely surrounds the discrete channel regions. | 05-15-2014 |
20140197377 | CMOS NANOWIRE STRUCTURE - Complimentary metal-oxide-semiconductor nanowire structures are described. For example, a semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first nanowire disposed above a substrate. The first nanowire has a mid-point a first distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. A first gate electrode stack completely surrounds the discrete channel region of the first nanowire. The semiconductor structure also includes a second semiconductor device. The second semiconductor device includes a second nanowire disposed above the substrate. The second nanowire has a mid-point a second distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. The first distance is different from the second distance. A second gate electrode stack completely surrounds the discrete channel region of the second nanowire. | 07-17-2014 |
20140285980 | CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR - Techniques are disclosed for converting a strain-inducing semiconductor buffer layer into an electrical insulator at one or more locations of the buffer layer, thereby allowing an above device layer to have a number of benefits, which in some embodiments include those that arise from being grown on a strain-inducing buffer and having a buried electrical insulator layer. For instance, having a buried electrical insulator layer (initially used as a strain-inducing buffer during fabrication of the above active device layer) between the Fin and substrate of a non-planar integrated transistor circuit may simultaneously enable a low-doped Fin with high mobility, desirable device electrostatics and elimination or otherwise reduction of substrate junction leakage. Also, the presence of such an electrical insulator under the source and drain regions may further significantly reduce junction leakage. In some embodiments, substantially the entire buffer layer is converted to an electrical insulator. | 09-25-2014 |
20140326952 | SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES - Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other. | 11-06-2014 |
20150021553 | JUNCTIONLESS ACCUMULATION-MODE DEVICE ISOLATED FROM SEMICONDUCTIVE SUBSTRATE BY REVERSE-BIAS JUNCTION - A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconductive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy. | 01-22-2015 |
20150255280 | THREE-DIMENSIONAL GERMANIUM-BASED SEMICONDUCTOR DEVICES FORMED ON GLOBALLY OR LOCALLY ISOLATED SUBSTRATES - Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional germanium-containing body is disposed on a semiconductor release layer disposed on the insulating structure. The three-dimensional germanium-containing body includes a channel region and source/drain regions on either side of the channel region. The semiconductor release layer is under the source/drain regions but not under the channel region. The semiconductor release layer is composed of a semiconductor material different from the three-dimensional germanium-containing body. A gate electrode stack surrounds the channel region with a portion disposed on the insulating structure and laterally adjacent to the semiconductor release layer. | 09-10-2015 |
20150303258 | SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES - Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other. | 10-22-2015 |
20150318219 | STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY OR LOCALLY ISOLATED SUBSTRATES - Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional channel region is disposed above the insulating structure. Source and drain regions are disposed on either side of the three-dimensional channel region and on an epitaxial seed layer. The epitaxial seed layer is composed of a semiconductor material different from the three-dimensional channel region and disposed on the insulating structure. A gate electrode stack surrounds the three-dimensional channel region with a portion disposed on the insulating structure and laterally adjacent to the epitaxial seed layer. | 11-05-2015 |
20150325648 | NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS - Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires. | 11-12-2015 |
20150380481 | CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR - Techniques are disclosed for converting a strain-inducing semiconductor buffer layer into an electrical insulator at one or more locations of the buffer layer, thereby allowing an above device layer to have a number of benefits, which in some embodiments include those that arise from being grown on a strain-inducing buffer and having a buried electrical insulator layer. For instance, having a buried electrical insulator layer (initially used as a strain-inducing buffer during fabrication of the above active device layer) between the Fin and substrate of a non-planar integrated transistor circuit may simultaneously enable a low-doped Fin with high mobility, desirable device electrostatics and elimination or otherwise reduction of substrate junction leakage. Also, the presence of such an electrical insulator under the source and drain regions may further significantly reduce junction leakage. In some embodiments, substantially the entire buffer layer is converted to an electrical insulator. | 12-31-2015 |
20160079360 | UNIAXIALLY STRAINED NANOWIRE STRUCTURE - Uniaxially strained nanowire structures are described. For example, a semiconductor device includes a plurality of vertically stacked uniaxially strained nanowires disposed above a substrate. Each of the uniaxially strained nanowires includes a discrete channel region disposed in the uniaxially strained nanowire. The discrete channel region has a current flow direction along the direction of the uniaxial strain. Source and drain regions are disposed in the nanowire, on either side of the discrete channel region. A gate electrode stack completely surrounds the discrete channel regions. | 03-17-2016 |
20160086951 | CMOS NANOWIRE STRUCTURE - Complimentary metal-oxide-semiconductor nanowire structures are described. For example, a semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first nanowire disposed above a substrate. The first nanowire has a mid-point a first distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. A first gate electrode stack completely surrounds the discrete channel region of the first nanowire. The semiconductor structure also includes a second semiconductor device. The second semiconductor device includes a second nanowire disposed above the substrate. The second nanowire has a mid-point a second distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. The first distance is different from the second distance. A second gate electrode stack completely surrounds the discrete channel region of the second nanowire. | 03-24-2016 |
Patent application number | Description | Published |
20080213265 | HUMAN CYTOMEGALOVIRUS NEUTRALISING ANTIBODIES AND USE THEREOF - The invention relates to neutralising antibodies which are specific for human cytomegalovirus and bind with high affinity as well as immortalised B cells that produce such antibodies. The invention also relates to the epitopes that the antibodies bind to as well as the use of the antibodies and the epitopes in screening methods as well as the diagnosis and therapy of disease. | 09-04-2008 |
20090081230 | HUMAN CYTOMEGALOVIRUS NEUTRALISING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies and antibody fragments having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for a combination of hCMV proteins UL130 and UL131A, or for a combination of hCMV proteins UL128, UL130 and UL131A. The invention relates also to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis and therapy of disease. | 03-26-2009 |
20100092481 | HUMAN CYTOMEGALOVIRUS NEUTRALISING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies, and antibody fragments thereof, having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for one, or a combination of two or more, hCMV gene UL products. The invention also relates to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis, prevention, and therapy of disease. | 04-15-2010 |
20120076801 | HUMAN CYTOMEGALOVIRUS NEUTRALISING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies and antibody fragments having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for a combination of hCMV proteins UL130 and UL131A, or for a combination of hCMV proteins UL128, UL130 and UL131A. The invention relates also to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis and therapy of disease. | 03-29-2012 |
20120076802 | HUMAN CYTOMEGALOVIRUS NEUTRALISING ANTIBODIES AND USE THEREOF - The invention relates to neutralising antibodies which are specific for human cytomegalovirus and bind with high affinity as well as immortalised B cells that produce such antibodies. The invention also relates to the epitopes that the antibodies bind to as well as the use of the antibodies and the epitopes in screening methods as well as the diagnosis and therapy of disease. | 03-29-2012 |
20120128691 | HUMAN CYTOMEGALOVIRUS NEUTRALIZING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies, and antibody fragments thereof, having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for one, or a combination of two or more, hCMV gene UL products. The invention also relates to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis, prevention, and therapy of disease. | 05-24-2012 |
20120128692 | HUMAN CYTOMEGALOVIRUS NEUTRALIZING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies, and antibody fragments thereof, having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for one, or a combination of two or more, hCMV gene UL products. The invention also relates to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis, prevention, and therapy of disease. | 05-24-2012 |
20130022618 | HUMAN CYTOMEGALOVIRUS NEUTRALIZING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies, and antibody fragments thereof, having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for one, or a combination of two or more, hCMV gene UL products. The invention also relates to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis, prevention, and therapy of disease. | 01-24-2013 |
20130101604 | HUMAN CYTOMEGALOVIRUS NEUTRALISING ANTIBODIES AND USE THEREOF - The invention relates to neutralising antibodies which are specific for human cytomegalovirus and bind with high affinity as well as immortalised B cells that produce such antibodies. The invention also relates to the epitopes that the antibodies bind to as well as the use of the antibodies and the epitopes in screening methods as well as the diagnosis and therapy of disease. | 04-25-2013 |
20130171169 | HUMAN CYTOMEGALOVIRUS NEUTRALISING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies and antibody fragments having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for a combination of hCMV proteins UL130 and UL131A, or for a combination of hCMV proteins UL128, UL130 and UL131A. The invention relates also to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis and therapy of disease. | 07-04-2013 |
20130302350 | HUMAN CYTOMEGALOVIRUS NEUTRALIZING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies, and antibody fragments thereof, having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for one, or a combination of two or more, hCMV gene UL products. The invention also relates to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis, prevention, and therapy of disease. | 11-14-2013 |
20140056914 | HUMAN CYTOMEGALOVIRUS NEUTRALISING ANTIBODIES AND USE THEREOF - The invention relates to neutralising antibodies which are specific for human cytomegalovirus and bind with high affinity as well as immortalised B cells that produce such antibodies. The invention also relates to the epitopes that the antibodies bind to as well as the use of the antibodies and the epitopes in screening methods as well as the diagnosis and therapy of disease. | 02-27-2014 |
20140193428 | HUMAN CYTOMEGALOVIRUS NEUTRALIZING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies, and antibody fragments thereof, having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for one, or a combination of two or more, hCMV gene UL products. The invention also relates to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis, prevention, and therapy of disease. | 07-10-2014 |
20140205615 | HUMAN CYTOMEGALOVIRUS NEUTRALIZING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies, and antibody fragments thereof, having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for one, or a combination of two or more, hCMV gene UL products. The invention also relates to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis, prevention, and therapy of disease. | 07-24-2014 |
20150353627 | HUMAN CYTOMEGALOVIRUS NEUTRALIZING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies, and antibody fragments thereof, having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for one, or a combination of two or more, hCMV gene UL products. The invention also relates to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis, prevention, and therapy of disease. | 12-10-2015 |
20160096880 | HUMAN CYTOMEGALOVIRUS NEUTRALIZING ANTIBODIES AND USE THEREOF - The invention relates to neutralizing antibodies, and antibody fragments thereof, having high potency in neutralizing hCMV, wherein said antibodies and antibody fragments are specific for one, or a combination of two or more, hCMV gene UL products. The invention also relates to immortalized B cells that produce, and to epitopes that bind to, such antibodies and antibody fragments. In addition, the invention relates to the use of the antibodies, antibody fragments, and epitopes in screening methods as well as in the diagnosis, prevention, and therapy of disease. | 04-07-2016 |
Patent application number | Description | Published |
20120163807 | REPRESENTATION OF THE PHYSICAL DEGRADATIONS IN AN OPTICAL COMMUNICATION NETWORK - To produce a representation of the physical degradation in an optical communication network comprising transparent switching nodes ( | 06-28-2012 |
20120249347 | VARIABLE BITRATE EQUIPMENT - The present invention refers to a signal concentrator comprising:
| 10-04-2012 |
20120311358 | METHOD FOR ACTIVATING CARD WITHIN A COMMUNICATION NETWORK - A method for activating a card within a communication network, making it possible to minimize the power consumption cost of putting the card into effect. The method consists of seeking out, and activating as a priority, cards which are located in already-activated receptacles. A receptacle may be a tray or cabinet in a predetermined search range corresponding to one or more nodes of said communication network. | 12-06-2012 |
20130011137 | METHOD FOR CONTROLLING THE ESTABLISHMENT OF A CONNECTION WITHIN A TRANSPORT NETWORK - A method for controlling the establishment of a connection with a transport network, said message consisting of extracting from a first signaling message a piece of switching status information for a transport switch of said node, configuring said transport switch within said switching status ( | 01-10-2013 |
20130195444 | DETERMINATION OF A MAXIMUM TRANSMISSION DISTANCE FOR HETEROGENEOUS TYPES OF OPTICAL FIBRE - A method, for determining a maximum transmission distance (D | 08-01-2013 |
20140022945 | METHOD FOR OBTAINING INFORMATION ABOUT THE OPERATING STATES OF NODES OF A COMMUNICATIONS NETWORK IN VIEW OF OPTIMIZED-ENERGY-COST ROUTING, AND CORRESPONDING DEVICE - The method is dedicated to managing information related to the operated states of a group of nodes of a communications network, connected to one another by oriented links each associated with a maximum transmission capacity controlled by elements of the nodes that may be placed into a state from among P operating states, chosen from among an up state and a down state and/or at least one intermediate idle state. This method includes (i) obtaining, for each oriented link of each node, P values Vjj′i, where i=1 to P, respectively representative of the distribution percentages of its maximum transmission capacity between elements placed into P different operating states, and (ii) building with these obtained values Vjj′i an operating state table of the nodes of the group, which for each of the links is representative of its available, unavailable, and, if any, partially available transmission capacities. | 01-23-2014 |
20140334815 | SYSTEM AND METHOD FOR SELECTING AN OPTICAL PATH IN AN OPTICAL NETWORK - The invention proposes a system and method for selecting an optimal optical path through which to transmit an optical signal, the optimal optical path is one of a plurality of optical paths in a transparent optical network. Each of the plurality of optical paths includes a plurality of optical elements. For each of the plurality of optical paths, a first optical signal to noise ratio is determined for each optical element in the respective optical path. Then, for each of the plurality of optical paths, nonlinear distortions caused by each optical element in the respective optical path are modelled as Gaussian noise and a second optical signal to noise ratio associated with the modelled Gaussian noise is determined. Finally, the optimal optical path is selected using the sums of the first and second optical signal to noise ratios, respectively. | 11-13-2014 |
20150098699 | PLANNING OF OPTICAL CONNECTIONS IN A WDM OPTICAL NETWORK - An exemplary technique is provided for planning a plurality of optical connections as a function of a plurality of traffic demand. In a routing step, a loopless network path is allocated to each traffic demand. Each traffic demand is allocated to a candidate optical connection or chain of candidate optical connections selected to carry the capacity of the traffic demand along the loopless network path allocated to the traffic demand. In an optimization step, a reduced set of candidate optical connections is defined by withdrawing the candidate optical connection to be withdrawn. A candidate optical connection or a chain of candidate optical connections is determined to be re-used among the reduced set of candidate optical connections. The traffic demand is re-allocated to the candidate optical connection or chain of candidate optical connections to be re-used. | 04-09-2015 |
Patent application number | Description | Published |
20090081133 | Mucoadhesive xyloglucan-containing formulations useful in medical devices and in pharmaceutical fromulations - Mucoadhesive and controlled release formulations consisting of aqueous solutions containing 0.05% to 5% by weight of a natural purified polymer having xyloglucan structure and 10% to 70% by weight of glycerol. These formulations are suitable for the application on human mucous membranes, such as nasal, oral and vaginal mucous membranes, as moisturizing and softening agents or as pharmaceutical release system. Further objects of the invention are pharmaceutical formulations and medical devices suitable for the application to human mucous membranes, containing the mucoadhesive and controlled release formulations together with active ingredients and excipients. | 03-26-2009 |
20120088726 | MUCOADHESIVE XYLOGLUCAN-CONTAINING FORMULATIONS USEFUL IN MEDICAL DEVICES AND IN PHARMACEUTICAL FROMULATIONS - Object of the invention are mucoadhesive and controlled release formulations consisting of aqueous solutions containing 0.05% to 5% by weight of a natural purified polymer having xyloglucan structure and 10% to 70% by weight of glycerol. These formulations are suitable for the application on human mucous membranes, such as nasal, oral and vaginal mucous membranes, as moisturizing and softening agents or as pharmaceutical release system. Further objects of the invention are pharmaceutical formulations and medical devices suitable for the application to human mucous membranes, containing the mucoadhesive and controlled release formulations together with active ingredients and excipients. | 04-12-2012 |
20120238630 | COMPOSITIONS COMPRISING NONSTEROIDAL ANTI - INFLAMMATORY DRUGS - The present invention describes liquid compositions comprising pharmaceutically active principles, like scarcely water-soluble, nonsteroidal anti-inflammatory drugs, in particular, but not exclusively, flurbiprofen (FP), processes for their manufacture and their therapeutic use. The liquid compositions comprising FP in association with natural polymers, like xyloglucans (XG), and pharmaceutically acceptable excipients like glycerol, are suitable to be used for pharmaceutical uses and are characterized by good tolerability, therapeutic efficacy, stability and palatability. | 09-20-2012 |
20130183325 | MUCOADHESIVE XYLOGLUCAN-CONTAINING FORMULATIONS USEFUL IN MEDICAL DEVICES AND IN PHARMACEUTICAL FORMULATIONS - Object of the invention are mucoadhesive and controlled release formulations consisting of aqueous solutions containing 0.05% to 5% by weight of a natural purified polymer having xyloglucan structure and 10% to 70% by weight of glycerol. These formulations are suitable for the application on human mucous membranes, such as nasal, oral and vaginal mucous membranes, as moisturizing and softening agents or as pharmaceutical release system. Further objects of the invention are pharmaceutical formulations and medical devices suitable for the application to human mucous membranes, containing the mucoadhesive and controlled release formulations together with active ingredients and excipients. | 07-18-2013 |
20140308350 | NSAID ADMINISTRATION AND RELATED COMPOSITIONS, METHODS AND SYSTEMS - Described herein are methods and systems for treatment and/or prevention of conditions associated with NSAID administration and related compositions. | 10-16-2014 |