Patent application number | Description | Published |
20090095346 | ANTIREFLECTIVE COATINGS FOR PHOTOVOLTAIC APPLICATIONS - A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula Si | 04-16-2009 |
20090096106 | ANTIREFLECTIVE COATINGS - A method of forming a feature in a substrate comprising the steps of: forming a dielectric layer on a substrate; forming an antireflective coating over the dielectric layer; forming a photoresist pattern over the antireflective coating; etching the dielectric layer through the patterned photoresist; and removing the antireflective coating and the photoresist, wherein the antireflective coating is a film represented by the formula Si | 04-16-2009 |
20100055921 | Selective Etching of Silicon Dioxide Compositions - A process for selectively etching a material comprising SiO | 03-04-2010 |
20100120262 | Amino Vinylsilane Precursors for Stressed SiN Films - The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR | 05-13-2010 |
20100291321 | Dielectric Barrier Deposition Using Nitrogen Containing Precursor - A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of;
| 11-18-2010 |
20120012201 | METHOD AND EQUIPMENT FOR SELECTIVELY COLLECTING PROCESS EFFLUENT - An apparatus and process for recovering a desired gas such as xenon difluoride, xenon, argon, helium or neon, from the effluent of a chemical process reactor that utilizes such gases alone or in a gas mixture or in a molecule that becomes decomposed wherein the chemical process reactor uses a sequence of different gas composition not all of which contain the desired gas and the desired gas is captured and recovered substantially only during the time the desired gas is in the effluent. | 01-19-2012 |
20120079939 | RECOVERING OF XENON BY ADSORPTION PROCESS - The present invention discloses the improvements to a vacuum swing adsorption (VSA) process used for Xe recovery. By only collecting the recovered gas mixture after the initial evacuation of N | 04-05-2012 |
20120244715 | HIGH-SELECTIVITY ETCHING SYSTEM AND METHOD - In a method and system for vapor etching, a material to be etched and an etch resistant material are placed into an etching chamber. Thereafter, a pressure in the etching chamber is adjusted to a desired pressure and the substrate is exposed to an etching gas and a gas that comprises oxygen. The exposure substantially selectively etches the material to be etched while substantially avoiding the etching of the etch resistant material. | 09-27-2012 |
20130017644 | Fluorine Based Chamber Clean With Nitrogen Trifluoride Backup - The present invention is a process for cleaning a reaction chamber comprising the steps of;
| 01-17-2013 |
20130341178 | Method and Apparatus for Removing Contaminants from Nitrogen Trifluoride - A highly pure nitrogen fluoride process fluid having an impurity content of 10 ppm or less can be effectively obtained by using radiation to cause the dissociation of chemical bonds in the impurity to form dissociation products and thereby make the removal of the dissociation products from the process fluid easier than the removal of the impurity from the process fluid. | 12-26-2013 |
20140030448 | NON-OXYGEN CONTAINING SILICON-BASED FILMS AND METHODS OF FORMING THE SAME - Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH | 01-30-2014 |
20140065844 | Amino Vinylsilane Precursors for Stressed SiN Films - The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR | 03-06-2014 |
20140196664 | SYSTEM AND METHOD FOR TUNGSTEN HEXAFLUORIDE RECOVERY AND REUSE - Condensable materials, such as but not limited to tungsten fluoride (WF | 07-17-2014 |
20150021599 | BARRIER MATERIALS FOR DISPLAY DEVICES - Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm | 01-22-2015 |