Patent application number | Description | Published |
20090256112 | Composite material of boron carbide . silicon carbide. silicon - A composite material according the invention includes boron carbide, silicon carbide, and silicon as main components, wherein an average grain diameter of boron carbide grains of the composite material is 10 μm or more and 30 μm or less. | 10-15-2009 |
20090284893 | Electrostatic chuck - An electrostatic chuck of the invention includes a ceramic dielectric made of a sintered body containing alumina and titanium oxide, with maximum particle size of segregation bodies of titanium compounds being smaller than average particle size of alumina, the ceramic dielectric having a volume resistivity of 10 | 11-19-2009 |
20100067165 | Electrostatic chuck and method for manufacturing same - An electrostatic chuck includes a ceramic member containing yttrium oxide as a main component, containing cerium element and obtained by firing under a nonoxidizing atmosphere. The electrostatic chuck that has high corrosion resistant characteristics and includes a ceramic member having a low volume resistivity with a strong attracting force that utilize the Johnsen-Rahbeck force can be obtained. | 03-18-2010 |
20100081557 | Corrosion-resistant member and method of manufacturing same - A corrosion-resistant member includes a ceramic member containing yttrium oxide as a main component, containing cerium element, and obtained by firing under a nonoxidizing atmosphere. The corrosion-resistant member that has high corrosion-resistant characteristics and includes a ceramic member having a low volume resitivity can be provided. | 04-01-2010 |
Patent application number | Description | Published |
20120315719 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, in a method of a nitride semiconductor light emitting device, a nitride semiconductor laminated body is formed on a first substrate having a first size. A first adhesion layer with a second size smaller than the first size is formed on the nitride semiconductor laminated body. A second adhesion layer is formed on a second substrate. The first and the second substrates are bonded while the first and second adhesion layers being overlapped each other. The first substrate is removed so as to generate a recess having a third size equal to or larger than the second size. The first substrate is etched until exposing the nitride semiconductor laminated body while injecting a chemical solution into the recess. The exposed nitride semiconductor laminated body is etched using the chemical solution so as to form a concave-convex portion in the exposed nitride semiconductor laminated body. | 12-13-2012 |
20130313590 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section. | 11-28-2013 |
20140070248 | LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE - According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer. | 03-13-2014 |
20150115306 | LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE INCLUDING A FLUORESCENT MATERIAL LAYER - A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer. | 04-30-2015 |