Patent application number | Description | Published |
20110137254 | Manufacturing method for a porous microneedle array and corresponding porous microneedle array and corresponding substrate composite - A manufacturing method for a porous microneedle array includes: forming a plurality of porous microneedle arrays, each having at least one microneedle and a porous carrier zone lying beneath it on the face of a semiconductor substrate; forming an interlayer between a non-porous residual layer of the semiconductor substrate located on the back side of the semiconductor substrate and the carrier zone, which has greater porosity than the carrier zone; detaching the residual layer from the carrier zone by breaking up the interlayer; and separating the microneedle arrays into corresponding chips. | 06-09-2011 |
20110211613 | Thermally Decoupled Micro-Structured Reference Element for Sensors - A micro-structured reference element for use in a sensor having a substrate and a dielectric membrane. The reference element has an electrical property which changes its value on the basis of temperature. The reference element is arranged with respect to the substrate so that the reference element is (i) electrically insulated from the substrate, and (ii) thermally coupled to the substrate. The reference element is arranged on the underside of the dielectric membrane. The reference element and side walls of the substrate define a circumferential cavern therebetween, which is also bounded by the dielectric membrane, arranged between them. The dielectric membrane is connected to the substrate. A surface area of the reference element which is covered by the dielectric membrane is greater than or equal to 10% and less than or equal to 100% of the possible coverable surface area. A surface of the cavern which is covered by the dielectric membrane is greater than or equal to 50% and less than or equal to 100% of the possible coverable surface. An edge of the reference element which faces the dielectric membrane has greater than or equal to 50% and less than or equal to 100% of its extent contacted by the dielectric membrane. Sections of the side walls of the cavern which face the dielectric membrane have greater than or equal to 50% and less than or equal to 100% of the possible size contacted by the dielectric membrane. | 09-01-2011 |
20110221455 | MICROMECHANICAL COMPONENT AND METHOD FOR ITS PRODUCTION - A method for producing a micromechanical component, includes providing a first substrate, developing a micropattern on the first substrate, the micropattern having a movable functional element, providing a second substrate, and developing an electrode in the second substrate for the capacitive recording of a deflection of the functional element. The method further includes connecting the first and the second substrate, a closed cavity being formed which encloses the functional element, and the electrode bordering on the cavity in an area of the functional element. | 09-15-2011 |
20110233750 | Arrangement of Two Substrates having an SLID Bond and Method for Producing such an Arrangement - An arrangement having a first and a second substrate is disclosed, wherein the two substrates are connected to one another by means of an SLID (Solid Liquid InterDiffusion) bond. The SLID bond exhibits a first metallic material and a second metallic material, wherein the SLID bond comprises the intermetallic Al/Sn-phase. | 09-29-2011 |
20120126799 | MAGNETIC FIELD SENSOR AND METHOD FOR PRODUCING A MAGNETIC FIELD SENSOR - A magnetometer is described, having a substrate and a magnetic core, the substrate having an excitation coil for generating a magnetic flux in the magnetic core; and the excitation coil having a coil cross section, which is aligned generally perpendicular to a main plane of extension of the substrate. The magnetic core is situated outside the coil cross section. | 05-24-2012 |
20120129291 | METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT - A method for producing a micromechanical component is described. The method includes providing a substrate having a layer system including an insulating material situated on the substrate, a conductive layer section and a protective layer structure connected to the conductive layer section, which borders a section of the insulating material. The method furthermore includes carrying out an isotropic etching process for removing a part of the insulating material, the conductive layer section and the protective layer structure preventing the removal of the bordered section of the insulating material; and a structural element being developed, which includes the conductive layer section, the protective layer structure and the bordered section of the insulating material. | 05-24-2012 |
20120187509 | Contact Arrangement For Establishing A Spaced, Electrically Conducting Connection Between Microstructured Components - A contact arrangement for establishing a spaced, electrically conducting connection between a first wafer and a second wafer includes an electrical connection contact, a passivation layer on the electrical connection contact, and a dielectric spacer layer arranged on the passivation layer, wherein the contact arrangement is arranged at least on one of the first wafer and the second wafer, wherein the contact arrangement comprises trenches at least partly filled with a first material capable of forming a metal-metal connection, wherein the trenches are continuous trenches from the dielectric spacer layer through the passivation layer as far as the electrical connection contact, and wherein the first material is arranged in the trenches from the electrical connection contact as far as the upper edge of the trenches. | 07-26-2012 |
20120189143 | Micromechanical Microphone Device and Method for Producing a Micromechanical Microphone Device - A micromechanical microphone device includes a membrane that is mounted in an elastically deflectable manner above a substrate and that has at least one gate electrode. The device further includes a source region and a drain region provided in or on the substrate with a channel region therebetween. The channel region is at least partly covered by the gate electrode and is spaced apart from the gate electrode by a gap. The membrane is deflectable under the influence of sound in such a way that the gap is variable. | 07-26-2012 |
20130015536 | MEMS WITH SINGLE USE VALVE AND METHOD OF OPERATIONAANM Feyh; AndoAACI Palo AltoAAST CAAACO USAAGP Feyh; Ando Palo Alto CA USAANM Chen; Po-JuiAACI SunnyvaleAAST CAAACO USAAGP Chen; Po-Jui Sunnyvale CA US - In one embodiment, a method of opening a passageway to a cavity includes providing a donor portion, forming a heating element adjacent to the donor portion, forming a first sacrificial slab abutting the donor portion, wherein the donor portion and the sacrificial slab are a shrinkable pair, forming a first cavity, a portion of the first cavity bounded by the first sacrificial slab, generating heat with the heating element, forming a first reduced volume slab from the first sacrificial slab using the generated heat and the donor portion, and forming a passageway to the first cavity by forming the first reduced volume slab. | 01-17-2013 |
20130032904 | Coated Capacitive Sensor - In one embodiment, a method of forming a MEMS device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a silicon based working portion on the sacrificial layer, releasing the silicon based working portion from the sacrificial layer such that the working portion includes at least one exposed outer surface, forming a first layer of silicide forming metal on the at least one exposed outer surface of the silicon based working portion, and forming a first silicide layer with the first layer of silicide forming metal. | 02-07-2013 |
20130094679 | MICROELECTROMECHANICAL LOUDSPEAKER ARRAY, AND METHOD FOR OPERATING A MICROELECTROMECHANICAL LOUDSPEAKER ARRAY - A microelectromechanical loudspeaker array includes a plurality of microelectromechanical loudspeaker elements each having a diaphragm element configured to be deflected from a neutral position into at least one deflection position to produce a sound pulse. The array further includes an actuation device which is configured to put the diaphragm element into the at least one deflection position from the neutral position on the basis of drive signals. The array further includes a control device coupled to the plurality of loudspeaker elements. The control device is configured to send, in each case at a driving time, (i) a first drive signal configured to produce a sound pulse by actuating the diaphragm element, and (ii) a respective second drive signal configured to relax the diaphragm element into the neutral position during a predetermined period of time after the driving time to the actuation device of at least one of the loudspeaker elements. | 04-18-2013 |
20130094684 | MICROMECHANICAL FUNCTIONAL APPARATUS, PARTICULARLY A LOUDSPEAKER APPARATUS, AND APPROPRIATE METHOD OF MANUFACTURE - A micromechanical functional apparatus, particularly a loudspeaker apparatus, includes a substrate, at least one circuit chip mounted on the substrate, and an enveloping package in which the circuit chip is packaged. The functional apparatus further includes a micromechanical functional arrangement, particularly a loudspeaker arrangement having a plurality of micromechanical loudspeakers, which is mounted on the enveloping package. A covering device is mounted above the micromechanical functional arrangement, particularly the loudspeaker arrangement, opposite the enveloping package. A method is implemented to manufacture the micromechanical functional apparatus. | 04-18-2013 |
20130098154 | Piezoresistive Micromechanical Sensor Component and Corresponding Measuring Method - A piezoresistive micromechanical sensor component includes a substrate, a seismic mass, at least one piezoresistive bar, and a measuring device. The seismic mass is suspended from the substrate such that it can be deflected. The at least one piezoresistive bar is provided between the substrate and the seismic mass and is subject to a change in resistance when the seismic mass is deflected. The at least one piezoresistive bar has a lateral and/or upper and/or lower conductor track which at least partially covers the piezoresistive bar and extends into the region of the substrate. The measuring device is electrically connected to the substrate and to the conductor track and is configured to measure the change in resistance over a circuit path which runs from the substrate through the piezoresistive bar and from the piezoresistive bar through the lateral and/or upper and/or lower conductor track. | 04-25-2013 |
20130126991 | MICROMECHANICAL FUNCTIONAL APPARATUS, PARTICULARLY A LOUDSPEAKER APPARATUS, AND APPROPRIATE METHOD OF MANUFACTURE - A micromechanical functional apparatus, particularly a loudspeaker apparatus, includes a substrate having a top and an underside and at least one circuit chip mounted on the underside in a first cavity. The apparatus further includes a micromechanical functional arrangement, particularly a loudspeaker arrangement, having a plurality of micromechanical loudspeakers mounted on the top in a second cavity. A covering device is mounted above the micromechanical functional arrangement on the top. An appropriate method is implemented to manufacture the micromechanical functional apparatus. | 05-23-2013 |
20130126992 | MEMS Chip Package and Method for Manufacturing an MEMS Chip Package - A MEMS chip package includes a first chip, a second chip, a first coupling element, and a first redistribution layer. The first chip has a first chip surface and a second chip surface, which is opposite the first chip surface. The second chip has a first chip surface and a second chip surface, which is opposite the first chip surface. The first coupling element couples the first chip surface of the second chip to the first chip surface of the first chip, so that a first cavity is defined between the first chip and the second chip. The first redistribution layer is mounted on the second chip surface of the second chip and is configured to provide contact with a substrate. | 05-23-2013 |
20130181575 | Piezoelectric Based MEMS Structure - In one embodiment, a method of deforming a MEMS structure includes providing a base layer, providing a first piezoelectric slab operably connected to a surface of the base layer, determining a desired deformation of the base layer, applying a first potential to a first electrode operably connected to the first piezoelectric slab, applying a second potential to a second electrode operably connected to the first piezoelectric slab, and deforming the base layer with the first piezoelectric slab using the applied first potential and the applied second potential based upon the determined desired deformation. | 07-18-2013 |
20130221411 | MICROMECHANICAL SENSOR APPARATUS WITH A MOVABLE GATE, AND CORRESPONDING PRODUCTION PROCESS - A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard region is provided in the substrate at least on the longitudinal sides of the channel region and has a second doping type which is the same as the first doping type and has a higher doping concentration. | 08-29-2013 |
20130228937 | Micromechanical Sound Transducer Arrangement and a Corresponding Production Method - A micromechanical sound transducer arrangement includes an electrical printed circuit board having a front side and a rear side. A micromechanical sound transducer structure is applied to the front side using the flip-chip method. The printed circuit board defines an opening for emitting soundwaves in the region of the micromechanical sound transducer structure. | 09-05-2013 |
20130327147 | Micromechanical Device for Measuring an Acceleration, a Pressure or the Like and a Corresponding Method - A micromechanical device measures an acceleration, a pressure or the like. It comprises a substrate having at least one fixed electrode, a seismic mass moveably arranged on the substrate, at least one ground electrode, which is arranged on the seismic mass, and resetting means for returning the seismic mass into an initial position, wherein the fixed electrode and the ground electrode are configured in one measurement plane for measuring an acceleration, a pressure or the like in the measurement plane, and wherein the fixed electrode and the ground electrode are configured for measuring an acceleration, pressure or the like acting on the seismic mass perpendicular to the measurement plane. The disclosure likewise relates to a corresponding method and a corresponding use. | 12-12-2013 |
20130327163 | MICROELECTROMECHANICAL SENSOR MODULE AND CORRESPONDING PRODUCTION METHOD - A microelectromechanical sensor module includes a sensing mechanism for measuring an acceleration, pressure, air humidity or the like, a control mechanism for controlling the sensing mechanism, an energy supply mechanism for supplying the sensor module with energy, and a transmission mechanism for transmitting signals of the sensing mechanism. At least three of the mechanisms are integrated at the chip level in at least one chip in each case. A corresponding method is implemented to produce the microelectromechanical sensor module. | 12-12-2013 |
20140054730 | SYSTEM AND METHOD FOR FORMING A BURIED LOWER ELECTRODE IN CONJUNCTION WITH AN ENCAPSULATED MEMS DEVICE - A system and method for forming a sensor device with a buried first electrode includes providing a first silicon portion with an electrode layer and a second silicon portion with a device layer. The first silicon portion and the second silicon portion are adjoined along a common oxide layer formed on the electrode layer of the first silicon portion and the device layer of the second silicon portion. The resulting multi-silicon stack includes a buried lower electrode that is further defined by a buried oxide layer, a highly-doped ion implanted region, or a combination thereof. The multi-silicon stack has a plurality of silicon layers and silicon dioxide layers with electrically isolated regions in each layer allowing for both the lower electrode and an upper electrode. The multi-silicon stack further includes a spacer that enables the lower electrode to be accessible from a topside of the sensor device. | 02-27-2014 |
20140054731 | MEMS PRESSURE SENSOR WITH MULTIPLE MEMBRANE ELECTRODES - In one embodiment, a MEMS sensor includes a first fixed electrode in a first layer, a cavity defined above the first fixed electrode, a membrane extending over the cavity, a first movable electrode defined in the membrane and located substantially directly above the first fixed electrode, and a second movable electrode defined at least partially within the membrane and located at least partially directly above the cavity. | 02-27-2014 |
20140054740 | CMOS BOLOMETER - A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O | 02-27-2014 |
20140061845 | SERPENTINE IR SENSOR - In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror. | 03-06-2014 |
20140077272 | MICROMECHANICAL SENSOR DEVICE WITH MOVABLE GATE AND CORRESPONDING PRODUCTION METHOD - A micromechanical sensor device with a movable gate includes a field effect transistor having a drain region, a source region, a channel region arranged between the field effect transistor and the source region and including a first doping type, and a movable gate. The movable gate is separated from the channel region by an interspace. The drain region, the source region, and the channel region are arranged in a substrate. An oxide region is provided in the substrate at least at longitudinal sides of the channel region. | 03-20-2014 |
20140084349 | Microelectronic Component and Corresponding Production Process - A microelectronic component includes a semiconductor substrate having a top side and a reverse side, an elastically movable mass device on the top side of the substrate, at least one source region provided in or on the mass device, at least one drain region provided in or on the mass device, and a gate region suspended on a conductor track arrangement above the at least one source region and at least one drain region and spaced apart from the mass device by a gap. The conductor track arrangement is anchored on the top side of the substrate in a periphery of the mass device such that the gate region remains fixed when the mass device has been moved. | 03-27-2014 |
20140116122 | COMBINED PRESSURE AND HUMIDITY SENSOR - A sensor device package includes a pressure sensor and a humidity sensor mounted on the same substrate and in the same housing with light protection for the pressure sensor a media opening for gas exchange for the humidity sensor. Light protection and rapid response times are provided through strategic positioning of the media opening, strategic arrangement of the pressure sensor, humidity sensor, and the media opening, and/or the use of opaque materials. | 05-01-2014 |
20140150552 | Chip Level Sensor with Multiple Degrees of Freedom - A sensing assembly device includes a substrate, a chamber above the substrate, a first piezoelectric gyroscope sensor positioned within the chamber, and a first accelerometer positioned within the chamber. | 06-05-2014 |
20140150553 | PACKAGING SYSTEM AND PROCESS FOR INERTIAL SENSOR MODULES USING MOVING-GATE TRANSDUCERS - A sensor device includes a first CMOS chip and a second CMOS chip with a first moving-gate transducer formed in the first CMOS chip for implementing a first 3-axis inertial sensor and a second moving-gate transducer formed in the second CMOS chip for implementing a second 3-axis inertial sensor. An ASIC for evaluating the outputs of the first 3-axis inertial sensor and the second 3-axis inertial sensor is distributed between the first CMOS chip and the second CMOS chip. | 06-05-2014 |
20140150560 | MEMS Pressure Sensor Assembly with Electromagnetic Shield - A pressure sensor assembly includes a pressure sensor die and a circuit die. The pressure sensor die includes a MEMS pressure sensor and an electromagnetic shield layer. The circuit die includes an ASIC configured to generate an electrical output corresponding to a pressure sensed by the MEMS pressure sensor. The ASIC is electrically connected to the pressure sensor die. The electromagnetic shield is configured to shield the MEMS pressure sensor and the ASIC from electromagnetic radiation. | 06-05-2014 |
20140151834 | MEMS Infrared Sensor Including a Plasmonic Lens - A method of fabricating a semiconductor device includes forming an absorber on a substrate, and supporting a cap layer over the substrate to define a cavity between the substrate and the cap layer in which the absorber is located. The method further includes forming a lens layer on the cap layer. The lens layer is spaced apart from the cavity and defines a plurality of grooves and an opening located over the absorber. | 06-05-2014 |
20140152772 | METHODS TO COMBINE RADIATION-BASED TEMPERATURE SENSOR AND INERTIAL SENSOR AND/OR CAMERA OUTPUT IN A HANDHELD/MOBILE DEVICE - A device for generating thermal images includes a low resolution infrared (IR) sensor supported within a housing and having a field of view. The IR sensor is configured to generate thermal images of objects within the field of view having a first resolution. A spatial information sensor supported within the housing is configured to determine a position for each of the thermal images generated by the IR sensor. A processing unit supported within the housing is configured to receive the thermal images and to combine the thermal images based on the determined positions of the thermal images to produce a combined thermal image having a second resolution that is greater than the first resolution. | 06-05-2014 |
20140167791 | Resistive MEMS Humidity Sensor - A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content. | 06-19-2014 |
20140169405 | Sensor With An Embedded Thermistor For Precise Local Temperature Measurement - A resistive temperature sensor (thermistor) for a microelectromechanical system (MEMS) device provides local temperatures of MEMS sensors and other MEMS devices for temperature compensation. Local accurate temperatures of the sensors and other devices provide for temperature compensation of such sensors or devices. By incorporating the thermistor structure into a MEMS device, an accurate temperature is sensed and measured adjacent to or within the structural layers of the device. In one embodiment, the thermistor is located within a few micrometers of the primary device. | 06-19-2014 |
20140175523 | Method of Manufacturing a Sensor Device Having a Porous Thin-Film Metal Electrode - A method of fabricating a semiconductor sensor device includes providing a substrate, supporting a source region and a drain region with the substrate, forming an insulator layer above the source region and the drain region, and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD). | 06-26-2014 |
20140175525 | CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer - A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer. | 06-26-2014 |
20140231939 | CAPACITIVE PRESSURE SENSOR AND METHOD - In one embodiment, a method of forming a MEMS device includes providing a silicon wafer with a base layer and an intermediate layer above an upper surface of the base layer. A first electrode is defined in the intermediate layer and an oxide portion is provided above an upper surface of the intermediate layer. A cap layer is provided on an upper surface of the oxide portion and a second electrode is defined in the cap layer. The method further includes etching the oxide portion to form a cavity such that when the second electrode and the cavity are projected onto the intermediate layer, the projected second electrode encompasses the projected cavity. | 08-21-2014 |
20140239421 | SURFACE CHARGE MITIGATION LAYER FOR MEMS SENSORS - A semiconductor device includes a substrate. At least one transducer is provided on the substrate. The at least one transducer includes at least one electrically conductive circuit element. A dielectric layer is deposited onto the substrate over the at least one transducer. A surface charge mitigation layer formed of a conductive material is deposited onto the outer surface of the dielectric layer with the surface charge mitigation layer being electrically coupled to ground potential. The surface charge mitigation layer may be deposited to a thickness of 10 nm or less, and the transducer may comprise a microelectromechanical systems (MEMS) device, such as a MEMS pressure sensor. The surface charge mitigation layer may be patterned to include pores to enhance the flexibility as well as the optical properties of the mitigation layer. | 08-28-2014 |
20140248735 | THIN-FILM ENCAPSULATED INFRARED SENSOR - A method of fabricating a bolometer infrared sensor includes depositing a first sacrificial layer on a surface of a substrate over a sensor region, and forming an absorber structure for the infrared sensor on top of the first sacrificial layer. A second sacrificial layer is deposited on top of the absorber structure. An encapsulating thin film is then deposited on top of the second sacrificial layer. Vent holes are formed in the encapsulating thin film. The first and the second sacrificial layers are removed below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located via the vent holes. The vent holes are then closed in a vacuum environment to seal the absorber structure within the cavity. | 09-04-2014 |
20140272333 | Metamaterial and Method for Forming a Metamaterial Using Atomic Layer Deposition - A metamaterial includes a first continuous layer formed with a first material by atomic layer deposition (ALD), a first non-continuous layer formed with a second material by ALD on first upper surface portions of a first upper surface of the first continuous layer, and a second continuous layer formed with the first material by ALD on second upper surface portions of the first upper surface of the first continuous layer and on a second upper surface of the first non-continuous layer. | 09-18-2014 |
20140294043 | MEMS INFRARED SENSOR INCLUDING A PLASMONIC LENS - A portable thermal imaging system includes a portable housing configured to be carried by a user, a bolometer sensor assembly supported by the housing and including an array of thermal sensor elements and at least one plasmonic lens, a memory including program instructions, and a processor operably connected to the memory and to the sensor, and configured to execute the program instructions to obtain signals from each of a selected set of thermal sensor elements of the array of thermal sensor elements, assign each of the obtained signals with a respective color data associated with a temperature of a sensed object, and render the color data. | 10-02-2014 |
20140314120 | Portable Device With Temperature Sensing - A hand-held device having a housing and a processor disposed within the housing, includes a camera and a temperature sensing element having an adjustable field of view. The camera is configured to generate an image of an object and to permit the user to frame the image at a portion of the object to determine the temperature of the framed portion. The temperature sensing element includes a plurality of temperature sensors and the processor is configured to select ones of the plurality of sensors to produce a field of view (FOV) of the temperature sensing element that is less than or equal to the frame in the image. The selected sensors are activated to generate signals corresponding to the temperature of the object in the FOV and the processor is configured to determine a sensed temperature based on the sensor signals. | 10-23-2014 |
20140374804 | Micromechanical Sensor Apparatus having a Movable Gate and Corresponding Production Method - A micromechanical sensor apparatus having a movable gate includes a field effect transistor that has a movable gate, which is separated from a channel region by a cavity. The channel region is covered by a gate insulation layer. | 12-25-2014 |
20150035093 | INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP - In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing. | 02-05-2015 |
20150086050 | Chip with a Micro-Electromechanical Structure and Covering Element, and a Method for the Production of Same - A micro-electromechanical chip includes a substrate, a micro-electromechanical structure formed in the substrate, and a covering element that is positioned on a surface of the substrate and that is configured to protect the micro-electromechanical structure from at least one of outside contaminants and mechanical influences. | 03-26-2015 |