Alp T.
Alp T. Findikoglu, Santa Fe, NM US
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20100236614 | HYBRID PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS AND AMORPHOUS SILICON - Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and perhaps, increased conversion efficiency in the ultraviolet through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs. | 09-23-2010 |
20110111964 | COATED CONDUCTOR ARCHITECTURE - A simplified architecture for a superconducting coated conductor is provided and includes a substrate, a layer of titanium nitride directly upon the substrate, the layer of titanium nitride deposited by ion beam assisted deposition (IBAD), a layer of a buffer material having chemical and structural compatibility with said layer of titanium nitride, the buffer material layer directly upon the IBAD-titanium nitride layer, and a layer of a high temperature superconductive material such as YBCO. | 05-12-2011 |
Alp T. Findikoglu, Los Alamos, NM US
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20090110915 | UNIVERSAL NUCLEATION LAYER/DIFFUSION BARRIER FOR ION BEAM ASSISTED DEPOSITION - A method for a new universal nucleation-layer/diffusion barrier, which is based on amorphous films of Si—O and Si—N for ion-beam-assisted deposition (IBAD) process. Unlike other nucleation layers that were used in the past, this process works on a variety of substrates (glass, Hastelloy tape, Cu), with varying surface roughness, and with a wide range of thickness. In addition, this new material system of Si—O (and Si—N) is ideally suited for oxide (and nitride) based multilayer stacks. As importantly, the flexibility in nucleation layer thickness allows the nucleation layer to be an effective diffusion barrier, and to be grown at room temperature, while the IBAD layer and subsequent epitaxial layers can be grown much thinner than usual. | 04-30-2009 |
Alp T. Finkikoglu, Los Alamos, NM US
Patent application number | Description | Published |
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20090214859 | BIAXIALLY ORIENTED FILM ON FLEXIBLE POLYMERIC SUBSTRATE - A flexible polymer-based template having a biaxially oriented film grown on the surface of a polymeric substrate. The template having the biaxially oriented film can be used for further epitaxial growth of films of interest for applications such as photovoltaic cells, light emitting diodes, and the like. Methods of forming such a flexible template and providing the polymeric substrate with a biaxially oriented film deposited thereon are also described. | 08-27-2009 |