| Patent application number | Description | Published |
|---|
| 20080212191 | Optical arrangement and optical method - An optical arrangement comprising at least one first light-emitting element (LE | 09-04-2008 |
| 20090296018 | Light-Emitting Device - A light-emitting device, comprising: a radiation source ( | 12-03-2009 |
| 20100091516 | Arrangement Comprising a Fiber-Optic Waveguide - An arrangement comprising a fiber-optic waveguide ( | 04-15-2010 |
| 20100295438 | Semiconductor Light Source Having a Primary Radiation Source and a Luminescence Conversion Element - A semiconductor light source is provided, the semiconductor light source having a primary radiation source ( | 11-25-2010 |
| 20110168977 | SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE - An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints. | 07-14-2011 |
| 20120039072 | Luminous Means and Projector Comprising at Least One Luminous Means of this Type - In at least one embodiment of the light source ( | 02-16-2012 |
| 20120326178 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner. | 12-27-2012 |
| 20130016752 | Laser Diode Assembly and Method for Producing a Laser Diode AssemblyAANM Lell; AlfredAACI Maxhutte-HaidhofAACO DEAAGP Lell; Alfred Maxhutte-Haidhof DEAANM Straussburg; MartinAACI DonaustaufAACO DEAAGP Straussburg; Martin Donaustauf DE - A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack. | 01-17-2013 |
| 20140341247 | Laser Diode Device - A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm. | 11-20-2014 |
