# Alan E. Rosenbluth, Yorktown Heights US

## Alan E. Rosenbluth, Yorktown Heights, NY US

Patent application number | Description | Published |
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20090011371 | REFLECTIVE FILM INTERFACE TO RESTORE TRANSVERSE MAGNETIC WAVE CONTRAST IN LITHOGRAPHIC PROCESSING - A method and system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity. | 01-08-2009 |

20090021718 | Method, Computer Program, Apparatus and System Providing Printing for an Illumination Mask for Three-Dimensional Images - A method able to provide illumination source parameters for illumination of a lithographic mask in order to project a three-dimensional image into a resist system. Source intensities of incident beams are determined using a near linear program and responsive to an allowed range of variation. Computer program, apparatus and system are detailed and variations are described. | 01-22-2009 |

20090040486 | REFLECTIVE FILM INTERFACE TO RESTORE TRANSVERSE MAGNETIC WAVE CONTRAST IN LITHOGRAPHIC PROCESSING - A method and system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity. | 02-12-2009 |

20090123057 | Method and System for Obtaining Bounds on Process Parameters for OPC-Verification - Embodiments of the present invention provide a method of performing printability verification of a mask layout. The method includes creating one or more tight clusters; computing a set of process parameters associated with a point on said mask; comparing said set of process parameters to said one or more tight clusters; and reporting an error when at least one of said process parameters is away from said one or more tight clusters. | 05-14-2009 |

20090180711 | RENDERING A MASK USING COARSE MASK REPRESENTATION - A method, system and computer program product for rendering a mask are disclosed. A method of rendering a mask may comprise: providing an initial mask design for a photolithographic process, the initial mask design including polygons; initially rendering the initial mask design as a coarse mask representation in a pixel based image calculation; identifying an overhang portion; and rendering the overhang portion using a set of subpixels whose artifacts from spatial-localization lie outside a practical resolution of a pseudo lens having a numerical aperture larger than that of a projection lens used in the photolithographic process; and updating the initial rendering based on the overhang portion rendering. | 07-16-2009 |

20090185740 | CALCULATING IMAGE INTENSITY OF MASK BY DECOMPOSING MANHATTAN POLYGON BASED ON PARALLEL EDGE - A method, system, computer program product and table lookup system for calculating image intensity for a mask used in integrated circuit processing are disclosed. A method may comprise: decomposing a Manhattan polygon of the mask into decomposed areas based on parallel edges of the Manhattan polygon along only one dimension; determining a convolution of each decomposed area based on a table lookup; determining a sum of coherent systems contribution of the Manhattan polygon based on the convolutions of the decomposed areas; and outputting the determined sum of coherent system contribution for analyzing the mask. | 07-23-2009 |

20090193387 | METHODOLOGY AND SYSTEM FOR DETERMINING NUMERICAL ERRORS IN PIXEL-BASED IMAGING SIMULATION IN DESIGNING LITHOGRAPHIC MASKS - A method is provided for designing a mask that includes the use of a pixel-based simulation of a lithographic process model, in which test structures are designed for determining numerical and discretization errors associated with the pixel grid as opposed to other model inaccuracies. The test structure has a plurality of rows of the same sequence of features, but each row is offset from other rows along an x-direction by a multiple of a minimum step size, such as used in modifying masks during optical proximity correction. The images for each row are simulated with a lithographic model that uses the selected pixel-grid size and the differences between row images are compared. If the differences between rows exceed or violate a predetermined criterion, the pixel grid size may be modified to minimize discretization and/or numerical errors due to the choice of pixel grid size. | 07-30-2009 |

20090199150 | Step-Walk Relaxation Method for Global Optimization of Masks - A set of candidate global optima is identified, one of which is a global solution for making a mask for printing a lithographic pattern. A solution space is formed from dominant joint eigenvectors that is constrained for bright and dark areas of the printed pattern. The solution space is mapped to identify regions each containing at most one local minimum intensity. For each selected region, stepped intensity contours are generated for intensity of the dark areas and stepped constraint surfaces are generated for a target exposure dose at an individual test point. An individual test point is stepped toward a lowest intensity contour along the stepped constraint surfaces of each selected region. Further lowering of the intensities of these points is also detailed, where possible in adjacent regions, to yield final test points. The set of candidate global optima is the final test points at their respective lowest intensity contour of the respective selected regions. | 08-06-2009 |

20090271757 | DATA CORRECTING HIERARCHICAL INTEGRATED CIRCUIT LAYOUT ACCOMMODATING COMPENSATE FOR LONG RANGE CRITICAL DIMENSION VARIATION - A solution for performing a data correction on a hierarchical integrated circuit layout is provided. A method includes: receiving a CD compensation map for the long range critical dimension variation prior to the data correction; grouping compensation amounts of the CD compensation into multiple compensation ranges; generating multiple target layers corresponding to the multiple compensation ranges; super-imposing a region of the CD compensation map having a compensation amount falling into a compensation range over a respective target layer to generate a target shape; performing the data correction on the layout to generate a data corrected layout; performing the data correction on the target shape separately to generate a data corrected target shape; and combining the data corrected layout and the data corrected target shape based on the CD compensation map. | 10-29-2009 |

20100003605 | SYSTEM AND METHOD FOR PROJECTION LITHOGRAPHY WITH IMMERSED IMAGE-ALIGNED DIFFRACTIVE ELEMENT - A novel system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. If necessary the photoresist is then sensitized. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. These high spatial frequency transmitted waves can be evanescent, or they can propagate at a steeper obliquity in a higher index medium than is possible in a projected image. A further method is described for designing lithographic masks to fabricate the hologram and to project the illuminating wavefront. In other embodiments, a simple personalization based on Talbot fringes and plasmonic interference is performed. | 01-07-2010 |

20100153901 | Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask - The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. | 06-17-2010 |

20100153902 | DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK BY SELECTING TARGET EDGE PAIRS USED IN DETERMINING A MANUFACTURING PENALTY OF THE LITHOGRAPHIC MASK - The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. | 06-17-2010 |

20100153903 | DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE - The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. | 06-17-2010 |

20100175042 | EFFICIENT ISOTROPIC MODELING APPROACH TO INCORPORATE ELECTROMAGNETIC EFFECTS INTO LITHOGRAPHIC PROCESS SIMULATIONS - The present invention relates to the modeling of lithographic processes for use in the design of photomasks for the manufacture of semiconductor integrated circuits, and particularly to the modeling of the complex effects due to interaction of the illuminating light with the mask topography. According to the invention, an isofield perturbation to a thin mask representation of the mask is provided by determining, for the components of the illumination, differences between the electric field on a feature edge having finite thickness and on the corresponding feature edge of a thin mask representation. An isofield perturbation is obtained from a weighted coherent combination of the differences for each illumination polarization. The electric field of a mask having topographic edges is represented by combining a thin mask representation with the isofield perturbation applied to each edge of the mask. | 07-08-2010 |

20100175043 | FAST AND ACCURATE METHOD TO SIMULATE INTERMEDIATE RANGE FLARE EFFECTS - A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI1 of about 5λ/NA to distance ROI2 when the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROI1 to ROI2 are smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy. | 07-08-2010 |

20100281449 | Method For Forming Arbitrary Lithographic Wavefronts Using Standard Mask Technology - A desired set of diffracted waves using mask features whose transmissions are chosen from a set of supported values are generated. A representation of the mask as a set of polygonal elements is created. Constraints which require that the ratio of the spatial frequencies in the representation take on the amplitude ratios of the desired set of diffracted waves are defined. An optimization algorithm is used to adjust the transmission discontinuities at the edges of the polygons to substantial equality with the discontinuity values allowed by the set of supported transmissions while maintaining the constraints. | 11-04-2010 |

20110096313 | Constrained Optimization Of Lithographic Source Intensities Under Contingent Requirements - A method for illuminating a mask to project a desired image pattern into a photoactive material is described. The method includes receiving an image pattern. Determining a relationship between source pixels in a set of source pixels to desired intensities at one or more points in the image pattern is performed. Linear constraints are imposed on a set of intensity values based on one or more contingent intensity condition. The contingent intensity conditions include integer variables specifying contingent constraints. The method includes determining values of the set of intensity values in accordance with the linear constraints, using a constrained optimization algorithm. The set of intensity values represents intensities of a set of source pixels. The set of intensity values are output. Apparatus and computer readable storage media are also described. | 04-28-2011 |

20110231803 | Wavefront engineering of mask data for semiconductor device design - Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel. | 09-22-2011 |

20110239169 | EMF CORRECTION MODEL CALIBRATION USING ASYMMETRY FACTOR DATA OBTAINED FROM AERIAL IMAGES OR A PATTERNED LAYER - A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask. | 09-29-2011 |

20120008134 | METHOD TO MATCH EXPOSURE TOOLS USING A PROGRAMMABLE ILLUMINATOR - Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask. | 01-12-2012 |

20120017194 | METHOD FOR FAST ESTIMATION OF LITHOGRAPHIC BINDING PATTERNS IN AN INTEGRATED CIRCUIT LAYOUT - The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate θ | 01-19-2012 |

20120047471 | DYNAMIC PROVISIONAL DECOMPOSITION OF LITHOGRAPHIC PATTERNS HAVING DIFFERENT INTERACTION RANGES - A method for obtaining mask and source patterns for printing integrated circuit patterns includes providing initial representations of a plurality of mask and source patterns. The method identifies long-range and short-range factors in the representations of the plurality of mask and source patterns, and provides a plurality of clips including a specified number of mask patterns. Short-range factors having overlapping ranges for each of the clips are specified. The method includes determining an initial processing priority for the plurality of clips, and determining a patterning relationship between integrated circuit patterns and the mask and source patterns. A primary objective is determined which expresses the printability of the integrated circuit patterns in terms of the patterning relationship. The method defines and iteratively solves a master problem employing the primary objective to generate values for the long-range factors, and solves subproblems employing a second objective for generating values for the short-range factors. | 02-23-2012 |

20120070064 | METHOD FOR DETERMINING MASK OPERATION ACTIVITIES - A method and system arrangement for controlling and determining mask operation activities. Upon obtaining chip physical layout design data and running resolution enhancement technology on the chip physical layout design to generate mask features which may include any sub-resolution assist features, a placement sensitivity metric is determined for each of the generated mask features or edge fragments. In one alternative embodiment an edge placement sensitivity metric is determined for each edge of the generated mask features or edge fragments. The determined sensitivity metrics for each feature are classified and applied to subsequent mask operational activities such as post processing, write exposure and mask repair. The types of decisions based on the sensitivity metric may include minimizing or maximizing OPC processing; e-beam exposure adjustment in mask write; and selection of which mask features to repair as well as what repair criteria to then apply, and adjusting quality requirement criteria for manufacturing assessment. | 03-22-2012 |

20120077130 | METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS - A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions. | 03-29-2012 |

20120092633 | REFLECTIVE FILM INTERFACE TO RESTORE TRANSVERSE MAGNETIC WAVE CONTRAST IN LITHOGRAPHIC PROCESSING - A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity. | 04-19-2012 |

20120196210 | Determining manufacturability of lithographic mask based on manufacturing shape penalty of aspect ratio of edge that takes into account pair of connected edges of the edge - The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the mask, for determining a manufacturing penalty in making the mask. The manufacturability of the mask, including the manufacturing penalty in making the mask, is determined based on the target edge pairs as selected, and is dependent on the manufacturing penalty in making the mask. Determining the manufacturability of the mask includes, for a selected edge pair having first and second edges that are at least substantially parallel to one another, determining a manufacturing shape penalty owing to an aspect ratio of the first edge relative to a size of a gap between the first edge and the second edge. This penalty takes into account a pair of connected edges of the first edge that are at least substantially parallel to the first edge. | 08-02-2012 |

20130019211 | Optimizing lithographic mask for manufacturability in efficient mannerAANM Sakamoto; MasaharuAACI YamatoAACO JPAAGP Sakamoto; Masaharu Yamato JPAANM Rosenbluth; Alan E.AACI Yorktown HeightsAAST NYAACO USAAGP Rosenbluth; Alan E. Yorktown Heights NY USAANM Szeto-Millstone; Marc AlanAACI SeattleAAST WAAACO USAAGP Szeto-Millstone; Marc Alan Seattle WA USAANM Inoue; TadanobuAACI YamatoAACO JPAAGP Inoue; Tadanobu Yamato JPAANM Tian; KehanAACI Hopewell JunctionAAST NYAACO USAAGP Tian; Kehan Hopewell Junction NY USAANM Waechter; AndreasAACI Yorktown HeightsAAST NYAACO USAAGP Waechter; Andreas Yorktown Heights NY USAANM Lee; JonathanAACI Yorktown HeightsAAST NYAACO USAAGP Lee; Jonathan Yorktown Heights NY USAANM Melville; David OsmondAACI Yorktown HeightsAAST NYAACO USAAGP Melville; David Osmond Yorktown Heights NY US - Mask layout data of a lithographic mask includes polygons that each include horizontal and vertical edges. Each of a number of target edge pairs is defined by two edges of one or more of the polygons. A search box having a boundary coincident with a given edge of the edges of the polygons is specified. Whether the search box includes at least one edge of the edges of the polygons in addition to the given edge is determined. Where the search box includes at least one edge, at least one of the target edge pairs is specified as including the given edge and one of the at least one edge. For each target edge pair that has been specified, a manufacturability penalty value is determined. A dynamic manufacturability constraint table and a non-zero multiplier table are maintained. | 01-17-2013 |

20130071774 | SYSTEM AND METHOD FOR PROJECTION LITHOGRAPHY WITH IMMERSED IMAGE-ALIGNED DIFFRACTIVE ELEMENT - A novel system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. A further method is described for designing lithographic masks to fabricate the hologram and to project the illuminating wavefront. In other embodiments, a simple personalization based on Talbot fringes and plasmonic interference is performed. | 03-21-2013 |

20130185045 | ANALYZING A PATTERNING PROCESS USING A MODEL OF YIELD - Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met. | 07-18-2013 |

20130185046 | Analyzing A Patterning Process Using A Model Of Yield - Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met. | 07-18-2013 |

20130263063 | MASK DESIGN METHOD, PROGRAM, AND MASK DESIGN SYSTEM - A method, an article of manufacture, and a system for designing a mask. The method for designing a mask is implemented by a computer device having a memory, a processor device communicatively coupled to the memory, and a module configured to carry out the method including the steps of: generating an optical domain representation from a design pattern and an imaging light; and optimizing the optical domain representation under a constraint that values of negative excursions at predetermined evaluation points must be greater than or equal to predetermined negative threshold values assigned to the predetermined evaluation points; where: the optical domain representation is a variable representation of a wavefront; the imaging light is light that is transmitted through the mask; the negative excursions are in an object domain representation of the optical domain representation; and the predetermined evaluation points are in the object domain representation. | 10-03-2013 |

20140268075 | SOURCE, TARGET AND MASK OPTIMIZATION BY INCORPORATING COUNTOUR BASED ASSESSMENTS AND INTEGRATION OVER PROCESS VARIATIONS - Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output | 09-18-2014 |

20140282291 | SOURCE-MASK OPTIMIZATION FOR A LITHOGRAPHY PROCESS - Systems and methods for optimizing a source shape and a mask shape for a lithography process are disclosed. One such method includes performing a mask optimization for the lithography process in accordance with a set of parameters including at least one variable representation, at least one objective and problem constraints. Further, a light source optimization for the lithography process is performed in accordance with the set of parameters. In addition, a joint light source-mask optimization is performed in accordance with the set of parameters. The method further includes iterating at least one of the mask optimization or the light source optimization by changing at least one of the variable representation, the objective or the problem constraints to maximize a common process window for the lithography process. | 09-18-2014 |

20140380255 | PRINTING PROCESS CALIBRATION AND CORRECTION - Various embodiments include approaches for calibrating a model for a lithographic printing process. Some embodiments include a computer-implemented method for calibrating a model for a lithographic printing process. Some approaches include: identifying parameters for a model of the lithographic printing process; assembling a population of design content including potentially printable features that can be printed by the lithographic printing process; preparing at least one matrix expressing a similarity between the potentially printable features in terms of the parameters for the model; determining a manifold of smaller dimensionality than the parameters for the model which exhibit maximum variation in similarity within the at least one matrix; and selecting a sample dataset of the potentially printable features from the manifold. | 12-25-2014 |