Patent application number | Description | Published |
20080299758 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A high-density N-type diffusion layer | 12-04-2008 |
20080299763 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap. | 12-04-2008 |
20090263951 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the steps of forming an insulating film on a semiconductor substrate, forming a plurality of wiring trenches in the insulating film, forming a plurality of wirings in the plurality of wiring trenches, forming a resist mask having an opening for selectively exposing one of regions between the plurality of wirings, on the insulating film and the plurality of wirings, forming an air gap trench by removing the insulating film from the selectively exposed one of the regions between the plurality of wirings by etching using the resist mask, and forming an air gap in the air gap trench by depositing an inter-layer insulating film over the plurality of wirings after removal of the resist mask. | 10-22-2009 |
20090278261 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - An interlayer insulating film is formed on the upper surface of a semiconductor substrate, and lower-level interconnects are formed in the interlayer insulating film. A liner insulating film is formed on the upper surfaces of the interlayer insulating film and lower-level interconnects. An interlayer insulating film is formed on the upper surface of the liner insulating film. Upper-level interconnects are formed in the interlayer insulating film. The lower-level interconnects and the upper-level interconnects are connected with each other through vias. Parts of the liner insulating film formed in via-adjacent regions have a greater thickness than a part thereof formed outside the via-adjacent regions. | 11-12-2009 |
20090302473 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: a first interlayer insulating film formed over a semiconductor substrate; a plurality of interconnects formed in the first interlayer insulating film; and a via and a dummy via, which are formed in the first interlayer insulating film so as to connect to at least one of the plurality of interconnects. A void is selectively formed between adjacent ones of the interconnects in the first interlayer insulating film. The dummy via is formed under an interconnect which is in contact with the void, so as to connect to the interconnect. The via and the dummy via are surrounded by the first interlayer insulating film with no void interposed therebetween. | 12-10-2009 |
20090302475 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first interlayer insulating film, and a plurality of first interconnects formed in the first interlayer insulating film. A void is selectively formed between adjacent ones of the plurality of first interconnects in the first interlayer insulating film, and a cap insulating film is formed in a region located over the void and between the interconnects. Respective widths of a lower end and an upper end of the void are substantially the same as a gap between the interconnects located adjacent to the void, and the lower end of the void is located lower than lower ends of the first interconnects located adjacent to the void. | 12-10-2009 |
20110175233 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes the steps of: forming a mask material film on an insulating film that is formed over a semiconductor substrate and then forming a mask pattern having a first trench formation opening and a second trench formation opening from the mask material film; forming, on the mask material film, a resist pattern having a third trench formation opening that exposes the first trench formation opening and covering the second trench formation opening; forming a first trench in the insulating film using the resist pattern and the mask pattern; and forming a second trench in the insulating film using the mask pattern after removing the resist pattern. | 07-21-2011 |
20120032333 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first insulating film is formed on a semiconductor substrate, an interconnect groove is formed in the first insulating film, the inside of the interconnect groove is filled with a metal film, thereby forming a first interconnect. Then, a protective film is formed on the first insulating film and the first interconnect, and the surface of the protective film is exposed to reactive gas, thereby forming a reaction layer on an interface between the first interconnect and the protective film. | 02-09-2012 |