Patent application number | Description | Published |
20140087564 | PLASAMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to place a substrate thereon, a purge gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to plasma, a magnetic field forming mechanism installed at a lateral side of the table unit and configured to form magnetic fields in a processing atmosphere in order to move electrons existing in the plasma of the process gas along a surface of the substrate; and an exhaust mechanism configured to exhaust gas from the interior of the processing vessel. The magnetic fields are opened at at-least one point in a peripheral edge portion of the substrate such that a loop of magnetic flux lines surrounding the peripheral edge portion of the substrate is not formed. | 03-27-2014 |
20140126980 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus which includes: first and second vacuum transfer chambers which are partitioned from each other; processing chambers configured to perform a vacuum processing onto substrates; a load lock chamber installed to be sandwiched between the first and second vacuum transfer chambers, and including partition valves installed between the load lock chamber and a normal pressure atmosphere, and between the load lock chamber and each of the first and second vacuum transfer chambers; and substrate mounting tables inside the load lock chamber and configured to move between an upper position at which the substrates are transferred between the load lock chamber and the normal pressure atmosphere, and a lower position at which the substrates are transferred between the load lock chamber and the first or second vacuum transfer chamber. | 05-08-2014 |
20140295677 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A method of forming an oxide film on an object to be processed, includes: supplying a film-forming raw material gas into a processing chamber; performing at least one of exhausting the processing chamber and supplying a purge gas into the processing chamber to remove gas remaining in the processing chamber; supplying an oxidant gas into the processing chamber; and performing at least one of exhausting the processing chamber and supplying the purge gas into the processing chamber to remove gas remaining in the processing chamber, wherein supplying an oxidant gas includes: supplying a first oxidant gas into the processing chamber at a first concentration; and supplying a second oxidant gas into the processing chamber at a second concentration higher than the first concentration. | 10-02-2014 |
20150107517 | Plasma Processing Apparatus - A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction. | 04-23-2015 |
20150118865 | METHOD AND APPARATUS FOR FORMING SILICON OXYCARBONITRIDE FILM, SILICON OXYCARBIDE FILM AND SILICON OXYNITRIDE FILM - A method for forming a silicon oxycarbonitride film includes supplying a gas containing a silicon precursor having an oxygen-containing group onto a process surface of a workpiece, supplying a gas containing a carbon precursor onto the process surface, and supplying a nitriding gas onto the process surface subjected to the supplying a gas containing a silicon precursor and the supplying a gas containing a carbon precursor. The silicon oxycarbonitride film is formed on the process surface by the supplying the gas containing the silicon precursor, the supplying gas containing the carbon precursor and the supplying a nitriding gas without performing an oxidation process. | 04-30-2015 |
20150235846 | METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM - A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by supplying a source gas containing chlorine and silicon into a reaction chamber accommodating the workpiece, activating the source gas, and reacting the activated source gas with the workpiece; and removing chlorine contained in the adsorbate by supplying hydrogen gas into the reaction chamber and activating the hydrogen gas, and reacting the activated hydrogen gas with the adsorbate, wherein removing the chlorine is performed after adsorbing the adsorbate is performed, thereby forming the amorphous silicon film on the workpiece; and forming a silicon oxide film on the workpiece by supplying an oxidizing gas into the reaction chamber and oxidizing the amorphous silicon film, wherein forming the amorphous silicon film and forming the silicon oxide film are repeated in this order plural times. | 08-20-2015 |
20150267292 | CLEANING METHOD OF SILICON OXIDE FILM FORMING APPARATUS, SILICON OXIDE FILM FORMING METHOD, AND SILICON OXIDE FILM FORMING APPARATUS - A cleaning method of a silicon oxide film forming apparatus for removing a deposit adhering to the inside of the silicon oxide film forming apparatus after a silicon oxide film is formed on a workpiece by supplying a process gas into a reaction chamber of the silicon oxide film forming apparatus. The cleaning method includes oxidizing the deposit adhering to the inside of the silicon oxide film forming apparatus by supplying an oxidizing gas into the reaction chamber, and cleaning the inside of the silicon oxide film forming apparatus by supplying a cleaning gas into the reaction chamber and removing the oxidized deposit. | 09-24-2015 |
20150275360 | Vacuum Processing Apparatus - Provided is a vacuum processing apparatus, which includes: a rotatable table installed in a vacuum vessel and configured to horizontally rotate around its center axis; a drive mechanism configured to rotate the rotatable table; a plurality of substrate holding units circumferentially arranged on the rotatable table and configured to obliquely hold a plurality of substrates with a front surface of each of the substrates oriented in a rotation direction of the rotatable table; a heating unit configured to heat the substrates held by the substrate holding units; a processing gas supply unit configured to supply a processing gas onto the substrates held by the substrate holding units; and a vacuum exhaust mechanism configured to vacuum-exhaust the interior of the vacuum vessel. | 10-01-2015 |