Patent application number | Description | Published |
20080314870 | Substrate Processing Method, Substrate Processing Apparatus, and Control Program - This invention provides a substrate processing method including a step of covering in advance the surface of a substrate W with water ( | 12-25-2008 |
20090000549 | Substrate processing method and apparatus - There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement. | 01-01-2009 |
20090139870 | Plating apparatus and plating method - A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern. | 06-04-2009 |
20090197510 | Polishing method and apparatus - This polishing method and polishing apparatus include: a polishing characteristics measurement step in which electrochemical characteristics of a slurry in relation to a material to be polished are measured; and a preparation step in which the slurry is prepared based on the measured electrochemical characteristics, wherein, in the polishing characteristics measurement step, a slurry is supplied from a slurry supply apparatus | 08-06-2009 |
20100075498 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND PROCESSING LIQUID - A semiconductor device has interconnects protected with an alloy film having a minimum thickness necessary for producing the effect of preventing diffusion of oxygen, copper, etc., formed more uniformly over an entire surface of a substrate with less dependency to the interconnect pattern of the substrate. The semiconductor device includes, embedded interconnects, formed by filling an interconnect material into interconnect recesses formed in an electric insulator on a substrate, and an alloy film, containing 1 to 9 atomic % of tungsten or molybdenum and 3 to 12 atomic % of phosphorus or boron, formed by electroless plating on at least part of the embedded interconnects. | 03-25-2010 |
20100105154 | METHOD AND APPARATUS FOR PROCESSING SUBSTRATE - A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate. | 04-29-2010 |
20130220382 | SUBSTRATE PROCESSING METHOD - There is provided a substrate processing method which can keep a surface of a substrate, which has hydrophobic properties, completely wet with a processing liquid during liquid processing, thereby preventing the formation of watermarks on the surface of the substrate. The substrate processing method for processing a substrate by supplying a processing liquid to a central portion of a surface of the substrate rotating horizontally, includes: determining the rotational speed of the substrate and the flow rate of the processing liquid when supplied to the surface of the substrate from a relationship between the rotational speed of the substrate and the flow rate of the processing liquid when supplied to the surface of the substrate, said relationship being dependent on the contact angle of the processing liquid with respect to the surface of the substrate and being capable of preventing partial draining of the processing liquid held on the surface of the substrate or partial drying of the surface of the substrate; and supplying the processing liquid to the central portion of the surface of the substrate at the determined flow rate while rotating the substrate at the determined rotational speed. | 08-29-2013 |
20140287580 | METHOD FOR FORMING CONDUCTIVE STRUCTURE, AND PLATING APPARATUS AND PLATING METHOD - A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern. | 09-25-2014 |