Patent application number | Description | Published |
20110290175 | Multi-Chamber CVD Processing System - A multi-chamber CVD system includes a plurality of substrate carriers where each substrate carrier is adapted to support at least one substrate. A plurality of enclosures are each configured to form a deposition chamber enclosing one of the plurality of substrate carriers to maintain an independent chemical vapor deposition process chemistry for performing a processing step. A transport mechanism transports each of the plurality of substrate carriers to each of the plurality of enclosures in discrete steps that allow processing steps to be performed in the plurality of enclosures for a predetermined time. In some embodiments, the substrate carrier can be rotatable. | 12-01-2011 |
20120058630 | Linear Cluster Deposition System - A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers. | 03-08-2012 |
20120156374 | SECTIONAL WAFER CARRIER - A structure for a chemical vapor deposition reactor includes a support element defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections releasably engaged with the support element. Each carrier section can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture extending between the top and bottom surfaces. The carrier sections can be disposed on the support element with the bottom surfaces of the carrier sections facing toward the upper surface of the support element, so that wafers can be held in the apertures of the carrier sections with one surface of each wafer confronting the support element and an opposite surface exposed at the top surface of the carrier sections. | 06-21-2012 |
20120171870 | WAFER PROCESSING WITH CARRIER EXTENSION - Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers. | 07-05-2012 |
20120216712 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF RUTHENIUM - Composition and method for depositing ruthenium. A composition containing ruthenium tetroxide RuO | 08-30-2012 |
20120223048 | System for Fabricating a Pattern on Magnetic Recording Media - An inline processing system for patterning magnetic recording layers on hard discs for use in a hard disc drive. Discs are processed on both sides simultaneously in a vertical orientation, in round plate-like holders called MDCs. A plurality (as many as 10) discs are held in a dial carrier of the MDC, and transferred from one process station to another. The dial carrier of the MDC may be rotated and/or angled at up to 70° from normal in each process station, so that one or a plurality of process sources may treat the discs simultaneously. This configuration provides time savings and a reduction in the number and size of process sources needed. A mask enhancement process for patterning of magnetic media, and a filling and planarizing process used therewith, are also disclosed. | 09-06-2012 |
20120272892 | Metal-Organic Vapor Phase Epitaxy System and Process - A VPE reactor is improved by providing temperature control to within 0.5° C., and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation. | 11-01-2012 |
20130065403 | WAFER CARRIER WITH THERMAL FEATURES - A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with thermal control features such as trenches which form thermal barriers having lower thermal conductivity than surrounding portions of the carrier. These thermal control features promote a more uniform temperature distribution across the wafer surfaces and across the carrier top surface. | 03-14-2013 |
20140326186 | METAL-ORGANIC VAPOR PHASE EPITAXY SYSTEM AND PROCESS - A VPE reactor is improved by providing temperature control to within 0.5° C., and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation. | 11-06-2014 |
20150069420 | TENSILE SEPARATION OF A SEMICONDUCTING STACK - A stressor layer is applied to a semiconducting stack in order to separate the semiconducting stack at a predetermined depth. Tensile force is applied to the stressor layer, fracturing the semiconducting stack at the predetermined depth and allowing the resulting upper portion of the semiconducting stack to be used in manufacturing a semiconducting end-product (e.g., a light-emitting diode). The resulting lower portion of the semiconducting stack may be reused to grow a new semiconducting stack thereon. | 03-12-2015 |