Patent application number | Description | Published |
20080316766 | WAVEGUIDE AND LIGHT EMITTING DEVICE HAVING THE SAME - A waveguide based on a three-dimensional photonic crystal is arranged to provide wave-guiding in a single mode and a mode having a field strength distribution with unimodality in a plane perpendicular to the wave-guiding direction, to thereby enable wave-guiding in a desired frequency band, wherein the three-dimensional photonic crystal has a plurality of line defect members which include a first line defect member made of a medium having a refractive index not smaller than that of the columnar structures and formed in a direction perpendicular to the direction in which the columnar structures extend, and a second line defect member formed in the same direction as the first line defect member. | 12-25-2008 |
20090148114 | THREE-DIMENSIONAL PHOTONIC CRYSTAL AND MANUFACTURING METHOD THEREOF - A three-dimensional photonic crystal includes a structure that includes first, second, third, and fourth layers in this order. The structure of each layer includes a flat surface as one end surface, and first, second, and third structural portions. The first structural portion has a first width along the flat surface and a first height from the flat surface. The second structural portion has a second width larger than the first width and a second height larger than the first height. The third structural portion has a width and a height that continuously or stepwise change in the extending direction of the structure. The flat surface at the structural portion of one of two adjacent layers in the first layer to the fourth layer contacts a surface opposite to the flat surface at the second structural portion of the other of the two adjacent layers. | 06-11-2009 |
20090201960 | THREE-DIMENSIONAL PHOTONIC CRYSTAL LIGHT EMITTING DEVICE - The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type semiconductor, a tunnel junction layer, and a first N-conductive layer formed of a first N-type conductor are arranged in this order. Electric conductivity of the first N-type conductor is higher than that of the P-type semiconductor. The light emitting device achieves high carrier injection efficiency and a high optical confinement effect. | 08-13-2009 |
20100260228 | METHOD OF PRODUCING THREE-DIMENSIONAL PHOTONIC CRYSTAL AND OPTICAL FUNCTIONAL DEVICE - A method of producing a three-dimensional photonic crystal by laminating a layer having a periodic structure, the method including the steps of forming a first structure and a second structure each including the layer having the periodic structure; and bonding a first bonding layer of the first structure and a second bonding layer of the second structure. The first bonding layer is one layer obtained by dividing a layer constituting the three-dimensional photonic crystal at a cross section perpendicular to a lamination direction, and the second bonding layer is the other layer obtained by dividing the layer constituting the three-dimensional photonic crystal at the cross section perpendicular to the lamination direction. | 10-14-2010 |
20110079867 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device capable of making reduction in reflection at the interface between a light guide and an incident unit consistent with improvement in condensing efficiency by the light guide is provided. The solid-state imaging device includes a substrate internally including a photoelectric conversion unit, and a condensing unit provided on an optical incident side of the substrate. A configuration satisfying relationships of |N | 04-07-2011 |
20120119068 | SOLID STATE IMAGE SENSOR - A solid state image sensor includes a plurality of pixels, each having a photoelectric conversion section formed in the inside of a substrate and a light-receiving section formed on the side of a light-receiving surface of the substrate. At least a part of the plurality of pixels is ranging pixels. The light-receiving section of each of the ranging pixels is equipped with a guided mode resonant filter adapted to reflect incident light getting into the inside of the light-receiving section at a specific incident angle. The normal line of the guided mode resonant filter is inclined relative to the principal ray of the flux of light entering the guided mode resonant filter. | 05-17-2012 |
20120237261 | SURFACE EMITTING LASER AND IMAGE FORMING APPARATUS - A surface emitting laser includes a stepped structure having a step between a first region and a second region, the stepped structure provided in an emission area located in an upper portion of the upper mirror. The surface emitting laser includes a light shielding member provided in a third region between the first region and the second region. The light shielding member is not provided in a portion of the first region and a portion of the second region. | 09-20-2012 |
20120327966 | PHOTONIC CRYSTAL SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME - A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer. | 12-27-2012 |
20130343415 | SURFACE EMITTING LASER - A surface emitting laser includes an active layer; a periodic-structure layer including a low-refractive-index medium and a high-refractive-index medium and whose refractive index varies periodically, the periodic-structure layer being provided at a position where light emitted from the active layer couples therewith; and a pair of electrodes from which electricity is supplied to the active layer. The periodic-structure layer is patterned as a square periodic-structure lattice. At least one of the electrodes includes one or more linear electrodes. A direction of each lattice vector of the periodic structure and a longitudinal direction of the linear electrodes are different from each other. | 12-26-2013 |
20140118589 | SOLID-STATE IMAGE SENSOR AND RANGE FINDER USING THE SAME - The invention provides a solid-state image sensor including a pixel having a plurality of photoelectric conversion portions and at least one waveguide arranged closer to a side of light incidence than the photoelectric conversion portions, wherein the waveguide has a core member and a cladding member formed of a medium having a refractive index lower than that of the core member, and wherein a layer formed of a medium having a refractive index lower than that of the core member of the waveguide is provided between the photoelectric conversion portions and the waveguide. | 05-01-2014 |
20140192384 | EXPOSING DEVICE AND IMAGE FORMING APPARATUS - Provided is an exposing device capable of enhancing usage efficiency of light and preventing degradation of imaging property due to a misalignment with a photosensitive drum. The exposing device includes: a laser array including multiple lasers arranged in a predetermined direction; and an optical system guiding light emitted from the each of the multiple lasers to a photosensitive member and focusing the light on the photosensitive member, in which the optical system includes multiple phase modulation elements to decrease a phase lag added in proportion to distance from a center axis that is defined by a principal light beam emitted from the each of the multiple lasers. | 07-10-2014 |
20150015752 | SOLID-STATE IMAGE SENSOR AND IMAGING APPARATUS USING SAME - A solid-state image sensor provided with a plurality of pixels which photo-electrically convert an object image formed by an imaging optical system, wherein at least a portion of the plurality of pixels are ranging pixels in which a first photoelectric conversion unit, a barrier region and a second photoelectric conversion unit are provided in alignment in a first direction in this sequence; in the peripheral regions where are distanced from a straight line perpendicular to the first direction and passing through the center of the solid-state image sensor, for more than half of the ranging pixels, the barrier region is situated eccentrically in a direction parallel to the first direction. | 01-15-2015 |
20150015755 | SOLID-STATE IMAGING SENSOR, RANGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging sensor provided with a plurality of pixels which convert an object image formed by an imaging optical system into an electrical signal, at least a part of the pixels being ranging pixels in which a first and a second photoelectric conversion unit are provided in alignment in a first direction, and in more than half of the ranging pixels in one of peripheral region of the solid-state sensor, the capacitance of the first photoelectric conversion unit being greater than the capacitance of the second photoelectric conversion unit; and in more than half of the ranging pixels in the other of peripheral region of the solid-state sensor, the capacitance of the second photoelectric conversion unit being greater than the capacitance of the first photoelectric conversion unit. | 01-15-2015 |
20150029366 | COLOR FILTER ARRAY, SOLID-STATE IMAGE SENSOR, AND IMAGING DEVICE - A color filter array includes a plurality of color filters having different center frequencies and each formed of static metal structures and an insulator, a first common electrode formed across the plurality of color filters, a second common electrode opposed to the first common electrode, separated from the static metal structures of the plurality of color filters by the insulator, and formed across the plurality of color filters, and a voltage applying unit configured to apply a voltage between the first common electrode and the second common electrode and change charge density on the surfaces of the static metal structures to thereby simultaneously change the center frequencies of the plurality of color filters. | 01-29-2015 |