Aiba
Keita Aiba, Nagano JP
Patent application number | Description | Published |
---|---|---|
20150233367 | PUMP DEVICE FOR ARTIFICIAL DIALYSIS - A pump device for artificial dialysis includes: a blood pump that transports blood; and a stepping motor that drives the blood pump without using a reduction gear. | 08-20-2015 |
Takeshi Aiba, Greenwood, IN US
Patent application number | Description | Published |
---|---|---|
20140047716 | APPARATUS AND METHOD FOR MEASURING BEARING DIMENSION - A method comprising: (a). providing a device comprising: a movable table having a movement gage; a gage for measuring a dimension of one or more bearing blanks; and a machining tool for machining the one or more bearing blanks; (b). prompting a user to input one or more process variables; (c). supplying the one or more bearing blank into the device; (d). moving the bearing blank to a table grinding position; and (e). measuring the dimension of the one or more bearing blanks using the gage; (f). measuring a distance moved by the movable table so that a reference measurement is provided; and (g). comparing the measurement of step (e) to the reference measurement of step (f). | 02-20-2014 |
Toshihiro Aiba, Shinagawa-Ku JP
Patent application number | Description | Published |
---|---|---|
20150237680 | INDUCTION HEATING SYSTEM, INDUCTION HEATING METHOD, OUTPUT MONITORING APPARATUS, OUTPUT MONITORING METHOD, AND INDUCTION HEATING APPARATUS - An induction heating system includes induction heating apparatuses, each including a high-frequency current transformer, a low-frequency current transformer and a heating coil, a high-frequency input switch connected to the high-frequency current transformer, a low-frequency input switch connected to the low-frequency current transformer, a first power source to output a high-frequency electric power and a low frequency electric power, a second power source, a first power source output switch connectable to the first power source, a second power source output switch connectable to the second power source, and a switch controller. Each induction heating apparatus includes a heater controller to send a signal to the switching controller to turn on one of the first power source output switch and the second power source output switch, to turn off the other, and to switch on or off each of the high-frequency input switch and the low-frequency input switch. | 08-20-2015 |
Yasushi Aiba, Nirasaki City JP
Patent application number | Description | Published |
---|---|---|
20150275367 | Gas Supply Mechanism, Gas Supplying Method, Film Forming Apparatus and Film Forming Method Using the Same - A gas supply mechanism of supplying a raw material gas obtained from a raw material of a solid state or a liquid state into a chamber configured to perform a film forming process on a workpiece is disclosed. The gas supply mechanism includes a gas supply controller configured to control a flow rate of a carrier gas by means of a flow rate controller, and to enable the carrier gas to flow while closing a material gas supply/shut-off valve to thereby increase internal pressures of a raw material container and a raw material gas supply pipe to be a high-pressure condition and then control the raw material gas supply/shut-off valve to be opened. | 10-01-2015 |
20150279735 | Tungsten Film Forming Method, Semiconductor Device Manufacturing Method, and Storage Medium - A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation. | 10-01-2015 |
Yasushi Aiba, Nirasaki JP
Patent application number | Description | Published |
---|---|---|
20150279736 | TUNGSTEN FILM FORMING METHOD - In a tungsten film forming method, a substrate having a recess is provided in a processing chamber, and a first tungsten film is formed on the substrate to fill the recess with a tungsten by simultaneously or alternately supplying WCl | 10-01-2015 |