Patent application number | Description | Published |
20100207098 | Light-Emitting Structure - A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type, are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type. | 08-19-2010 |
20110051771 | Optoelectronic Component and Method for Producing an Optoelectronic Component - An optoelectronic component contains an epitaxial layer sequence ( | 03-03-2011 |
20130039376 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip, the latter includes a carrier and a semiconductor layer sequence grown on the carrier. The semiconductor layer sequence is based on a nitride-compound semiconductor material and contains at least one active zone for generating electromagnetic radiation and at least one waveguide layer, which indirectly or directly adjoins the active zone. A waveguide being formed. In addition, the semiconductor layer sequence includes a p-cladding layer adjoining the waveguide layer on a p-doped side and/or an n-cladding layer on an n-doped side of the active zone. The waveguide layer indirectly or directly adjoins the cladding layer. An effective refractive index of a mode guided in the waveguide is in this case greater than a refractive index of the carrier. | 02-14-2013 |
20140138703 | Optoelectronic Semiconductor Body and Method for Producing an Optoelectronic Semiconductor Body - An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas. | 05-22-2014 |
20140146842 | Semiconductor Stripe Laser - A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm | 05-29-2014 |
20140239253 | Optoelectronic Semiconductor Chip and Method for Producing the Latter - A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween. | 08-28-2014 |
20150194788 | RIDGE LASER - In at least one embodiment, the bar laser ( | 07-09-2015 |
20150255956 | Semiconductor Laser with Improved Current Conduction - A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least Al | 09-10-2015 |