Patent application number | Description | Published |
20110289636 | HIGH-SPEED SCANNING PROBE MICROSCOPE - The invention is directed to a probe for scanning probe microscopy. The probe | 11-24-2011 |
20120001142 | CARBON-BASED MEMORY ELEMENT - One embodiment of the disclosure can provide a storage layer of a resistive memory element comprising a resistance changeable material. The resistance changeable material can include carbon. Contact layers can be provided for contacting the storage layer. The storage layer can be disposed between a bottom contact layer and a top contact layer. The resistance changeable material can be annealed at a predetermined temperature over a predetermined annealing time for rearranging an atomic order of the resistance changeable material. | 01-05-2012 |
20120046762 | PERFORMANCE IMPROVEMENT OF SIGNAL TRANSFORMATION SCHEMES FOR ULTRA-FAST SCANNING - A mechanism for controlling a plant is provided. A reference signal is received at a signal transformation loop of a feedback controller. The signal transformation loop causes the reference signal to include a disturbance signal and a nominal signal. Also, the reference signal is received at a feed-forward controller, and the feed-forward controller recreates the disturbance signal that was caused by the signal transformation loop. The output of the feedback controller is input into a plant. The output of the feed-forward controller is input into the plant such that the disturbance signal is removed from the output of the feedback controller. | 02-23-2012 |
20130021845 | PROGRAMMING AT LEAST ONE MULTI-LEVEL PHASE CHANGE MEMORY CELL - A method is provided that comprises a step of programming the PCM cell to have a respective definite cell state by at least one current pulse flowing to the PCM cell, said respective definite cell state being defined at least by a respective definite resistance level, a step of controlling said respective current pulse by a respective bitline pulse and a respective wordline pulse, and a step of controlling said respective bitline pulse and said respective wordline pulse dependent on an actual resistance value of the PCM cell and a respective reference resistance value being defined for the definite resistance level. | 01-24-2013 |
20130044540 | PROGRAMMING AT LEAST ONE MULTI-LEVEL PHASE CHANGE MEMORY CELL - An apparatus for programming at least one multi-level Phase Change Memory (PCM) cell having a first terminal and a second terminal A programmable control device controls the PCM cell to have a respective cell state by applying at least one current pulse to the PCM cell, the control device controlling the at least one current pulse by applying a respective first pulse to the first terminal and a respective second pulse applied to the second terminal of the PCM cell. The respective cell state is defined by a respective resistance level. The control device receives a reference resistance value defining a target resistance level for the cell, and further receives an actual resistance value of said PCM cell such that the applying the respective first pulse and said respective second pulse is based on said actual resistance value of the PCM cell and said received reference resistance value. | 02-21-2013 |
20130105286 | ELECTROMECHANICAL SWITCH DEVICE AND METHOD OF OPERATING THE SAME | 05-02-2013 |
20130135924 | PROGRAMMING OF PHASE-CHANGE MEMORY CELLS - Methods and apparatus are provided for programming a phase-change memory cell having s>2 programmable cell states. At least one control signal is applied to produce a programming pulse for programming the cell. At least one control signal is varied during the programming pulse to shape the programming pulse in dependence on the cell state to be programmed and produce a selected one of a plurality of programming pulse waveforms corresponding to respective programming trajectories for programming the cell states. The selected programming pulse waveform corresponds to a programming trajectory containing the cell state to be programmed. | 05-30-2013 |
20130197882 | EVALUATING AND OPTIMIZING A TRAJECTORY FUNCTION - A method for evaluating a trajectory function to be followed by a physical system includes providing the trajectory function; determining a set of sampling points by sampling a trajectory based on the trajectory function in the time domain; associating a cell to each of the sampling points; assessing at least one cell metric for each of the cells; aggregating the at least one cell metric of the cells to obtain an aggregated metric measure; and evaluating the trajectory as determined by the provided trajectory function depending on the one or more aggregated metric measures. | 08-01-2013 |
20130214239 | METHOD FOR MANUFACTORING A CARBON-BASED MEMORY ELEMENT AND MEMORY ELEMENT - A method for manufacturing a resistive memory element includes providing a storage layer comprising a resistance changeable material, said resistance changeable material comprising carbon; providing contact layers for contacting the storage layer, wherein the storage layer is disposed between a bottom contact layer and a top contact layer; and doping the resistance changeable material with a dopant material. | 08-22-2013 |
20130258767 | PHASE-CHANGE MEMORY CELL - A phase-change memory cell includes a phase change material; a reference electrical terminal disposed on first side of the phase change material; first and second electrical terminals disposed on a second side of the phase change material; the phase-change material configured to be reversibly transformable between an amorphous phase and a crystalline phase, in response to a phase-altering electrical signal applied to the phase-change material via the reference electrical terminal and one or more of the first and second electrical terminals; a resistance measurement unit configured to measure a respective electrical resistance between each of the first and electrical terminals and the reference electrical terminal; and a mathematical operation unit configured to determine a mathematical relation between the respective electrical resistances measured between each of the electrical terminals and the reference electrical terminal. | 10-03-2013 |
20130318793 | POSITIONING DEVICE FOR SCANNING A SURFACE - A positioning device for scanning a surface includes a movable element; at least one spring-like element having a resilience element for providing a tunable resilience in at least one direction; wherein the spring-like element is configured to tune the resilience by applying a force onto the resilience element of the at least one spring-like element. | 12-05-2013 |
20130321892 | POSITIONING DEVICE FOR SCANNING A SURFACE - A positioning device for scanning a surface includes a movable element; at least one spring-like element having a resilience element for providing a tunable resilience in at least one direction; wherein the spring-like element is configured to tune the resilience by applying a force onto the resilience element of the at least one spring-like element. | 12-05-2013 |
20130322156 | READ MEASUREMENT OF RESISTIVE MEMORY CELLS - A method for read measurement of resistive memory cells having s≧2 programmable cell-states includes applying to each cell at least one initial voltage and making a measurement indicative of cell current due to the initial voltage; determining a read voltage for the cell in dependence on the measurement; applying the read voltage to the cell; making a read measurement indicative of cell current due to the read voltage; and outputting a cell-state metric dependent on the read measurement; wherein the read voltages for cells are determined in such a manner that the cell-state metric exhibits a desired property. | 12-05-2013 |
20130322157 | READ MEASUREMENT OF RESISTIVE MEMORY CELLS - A method for read measurement of resistive memory cells having s≧2 programmable cell-states includes applying to each cell at least one initial voltage and making a measurement indicative of cell current due to the initial voltage; determining a read voltage for the cell in dependence on the measurement; applying the read voltage to the cell; making a read measurement indicative of cell current due to the read voltage; and outputting a cell-state metric dependent on the read measurement; wherein the read voltages for cells are determined in such a manner that the cell-state metric exhibits a desired property. | 12-05-2013 |
20140061580 | SEMICONDUCTOR STACK INCORPORATING PHASE CHANGE MATERIAL - A semiconductor stack for performing at least a logic operation includes adjacent layers arranged in a stacked configuration with each layer comprising at least a phase-change memory cell in which a phase-change material is provided between a heater electrical terminal and at least two further heater electrical terminals, the phase-change material between the heater electrical terminal and each of the two further heater electrical terminals being operable in one of at least two reversibly transformable phases, an amorphous phase and a crystalline phase; wherein the semiconductor stack, when in use, is configurable to store information by way of an electrical resistance of the phase of the phase-change material between each heater electrical terminal and each of the two further heater electrical terminals in each layer, and the logic operation is performed on the basis of the information stored in the adjacent layers. | 03-06-2014 |
20140063932 | SEMICONDUCTOR STACK INCORPORATING PHASE CHANGE MATERIAL - A semiconductor stack for performing at least a logic operation includes adjacent layers arranged in a stacked configuration with each layer comprising at least a phase-change memory cell in which a phase-change material is provided between a heater electrical terminal and at least two further heater electrical terminals, the phase-change material between the heater electrical terminal and each of the two further heater electrical terminals being operable in one of at least two reversibly transformable phases, an amorphous phase and a crystalline phase; wherein the semiconductor stack, when in use, is configurable to store information by way of an electrical resistance of the phase of the phase-change material between each heater electrical terminal and each of the two further heater electrical terminals in each layer, and the logic operation is performed on the basis of the information stored in the adjacent layers. | 03-06-2014 |