Patent application number | Description | Published |
20100202254 | CMUTS WITH A HIGH-K DIELECTRIC - A capacitive ultrasound transducer includes a first electrode, a second electrode, and a third electrode, the third electrode including a central region disposed in collapsibly spaced relation with the first electrode, and a peripheral region disposed outward of the central region and disposed in collapsibly spaced relation with the second electrode. The transducer further includes a layer of a high dielectric constant material disposed between the third electrode and the first electrode, and between the third electrode and the second electrode. The transducer may be operable in a collapsed mode wherein the peripheral region of the third electrode oscillates relative to the second electrode, and the central region of the third electrode is fully collapsed with respect to the first electrode such that the dielectric layer is sandwiched therebetween. Piezoelectric actuation, such as d31 and d33 mode piezoelectric actuation, may further be included. A medical imaging system includes an array of such capacitive ultrasound transducers disposed on a common substrate. | 08-12-2010 |
20110051309 | TUNABLE CAPACITOR - The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (ε | 03-03-2011 |
20110073994 | TRENCH CAPACITOR AND METHOD FOR PRODUCING THE SAME - A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance whilst being efficient in utilisation of semiconductor real estate. | 03-31-2011 |
20110198725 | GENERATING AND EXPLOITING AN ASYMMETRIC CAPACITANCE HYSTERESIS OF FERROELECTRIC MIM CAPACITORS - The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacity hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices. | 08-18-2011 |
20110204480 | 3D INTEGRATION OF A MIM CAPACITOR AND A RESISTOR - The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, ( | 08-25-2011 |
20110254141 | PHYSICAL STRUCTURE FOR USE IN A PHYSICAL UNCLONABLE - The invention relates to a semiconductor device comprising a physical structure ( | 10-20-2011 |
20120045881 | METHOD FOR FABRICATING AN INTEGRATED-PASSIVES DEVICE WITH A MIM CAPACITOR AND A HIGH-ACCURACY RESISTOR ON TOP - The present invention relates to a method for fabricating an electronic component, comprising fabricating, on a substrate ( | 02-23-2012 |
20120055768 | MEMS ELECTROSTATIC ACTUATOR - A MEMS electrostatic actuator comprises first and second opposing electrode arrangements, wherein at least one of the electrode arrangements is movable. A dielectric material ( | 03-08-2012 |