EMBEDDED NON-VOLATILE MEMORY WITH SINGLE POLYSILICON LAYER MEMORY CELLS PROGRAMMABLE THROUGH BAND-TO-BAND TUNNELING-INDUCED HOT ELECTRON AND ERASABLE THROUGH FOWLER-NORDHEIM TUNNELING - diagram, schematic, and image 09
Back to EMBEDDED NON-VOLATILE MEMORY WITH SINGLE POLYSILICON LAYER MEMORY CELLS PROGRAMMABLE THROUGH BAND-TO-BAND TUNNELING-INDUCED HOT ELECTRON AND ERASABLE THROUGH FOWLER-NORDHEIM TUNNELING , All Patents .