MEMORY CELL TRANSISTORS HAVING BANDGAP-ENGINEERED TUNNELING INSULATOR LAYERS, NON-VOLATILE MEMORY DEVICES INCLUDING SUCH TRANSISTORS, AND METHODS OF FORMATION THEREOF - diagram, schematic, and image 14
Back to MEMORY CELL TRANSISTORS HAVING BANDGAP-ENGINEERED TUNNELING INSULATOR LAYERS, NON-VOLATILE MEMORY DEVICES INCLUDING SUCH TRANSISTORS, AND METHODS OF FORMATION THEREOF , All Patents .