53rd week of 2009 patent applcation highlights part 16 |
Patent application number | Title | Published |
20090321676 | FERROMAGNETIC NANOPARTICLES WITH HIGH MAGNETOCRYSTALLINE ANISOTROPY FOR MICR INK APPLICATIONS - An ink including stabilized magnetic single-crystal nanoparticles, wherein the value of the magnetic anisotropy of the magnetic nanoparticles is greater than or equal to 2×10 | 2009-12-31 |
20090321677 | LOW MICROWAVE LOSS FERRITE MATERIAL AND MANUFACTURING PROCESS - The invention relates to a ferrite material of garnet structure based on yttrium and iron and containing copper, which makes it possible for its sintering temperature to be substantially lowered compared with the conventional ferrite materials of garnet type which satisfy the following chemical formula: | 2009-12-31 |
20090321678 | Method and apparatus for ultracapacitor electrode with controlled binder content - Particles of active electrode material are made by blending or mixing a mixture of activated carbon, optional conductive carbon, and binder. In selected implementations, binder content in the electrode material is relatively low, typically the binder content of the mixture being between about 3 percent and about 10 percent by weight. The electrode material may be attached to a current collector to obtain an electrode for use in various electrical devices, including a double layer capacitor. The composition of the mixture increases the energy density and the integrity of the electrode. | 2009-12-31 |
20090321679 | NOVEL PORE-FORMING PRECURSORS AND POROUS DIELECTRIC LAYERS OBTAINED THEREFROM - The invention relates to porous dielectric layers obtained from pore-forming precursors and from matrix precursors. According to the invention, the pore-forming precursors used are chosen form molecules of myrtenol, ethyl chrysanthemumate, jasmine, trimethylbenzene, their positional isomers and their substituted or hydrogenated derivatives. The dielectric constant of the layer obtained is less than or equal to 2.5, starting from matrix precursors having a dielectric constant of less than or equal to 4. | 2009-12-31 |
20090321680 | Process and Apparatus for Utilizing Oxygen-Containing Polymers - A process is described for converting and utilizing oxygen-containing polymers to form hydrogen and alkali metal carbonates, in which the polymers are brought into intimate contact with a melt mixture of alkali metal hydroxide and alkali metal carbonate to form hydrogen and alkali metal carbonate, and the alkali metal carbonate formed is removed from the reaction mixture during the reaction and alkali metal hydroxide is optionally metered in. The reaction is preferably carried out under conditions which lie on a point on the Liquidus line of the system. It is possible in accordance with the invention to process natural or synthetic polymers, for example polyester, polyether, wood, etc. It is particularly suitable for processing fiber-reinforced composite materials. Also described is an apparatus for performing the process according to the invention. | 2009-12-31 |
20090321681 | Barrier Compositions - Barrier compositions comprising high shape factor surface treated kaolins are described. | 2009-12-31 |
20090321682 | Production Method Of Water Absorbent Resin Powder And Package Of Water Absorbent Resin Powder - A method according to the present invention for producing water absorbent resin powder is a method for producing water absorbent resin having a surface cross-linked structure, and includes: a polymerization step in which an unsaturated monomer aqueous solution is polymerized; a drying step in which a hydrogel cross-linked polymer obtained in the polymerization step is dried; a surface treatment step in which the hydrogel cross-linked polymer or a dried hydrogel cross-linked polymer is subjected to a surface treatment; and a sorting step, carried out after the drying step, in which a foreign matter included in a water absorbent resin is color-sorted from the water absorbent resin entirely or partially. As a result, it is possible to obtain a water absorbent resin which has high properties and is less likely to be colored. In this way, there is provided the water absorbent resin powder production method in which the color sorting technique is used to remove foreign matters from the water absorbent resin. | 2009-12-31 |
20090321683 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal composition is provided that satisfies at least one characteristic among the characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a large optical anisotropy, a large dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or is properly balanced regarding at least two characteristics. An AM device is provided that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth. The liquid crystal composition having a nematic phase contains a specific five-ring compound having a large maximum temperature as the first component, a specific compound having a small viscosity as the second component, and a specific four-ring compound having a high maximum temperature as the third component. The liquid crystal display device contains the liquid crystal composition. | 2009-12-31 |
20090321684 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY ELEMENT - The liquid crystal composition includes at least one compound selected from a group of compounds represented by formula (1) as a first component, has a positive dielectric anisotropy, and has a nematic phase, and a liquid crystal display element containing the composition: | 2009-12-31 |
20090321685 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY ELEMENT - The liquid crystal composition includes at least one compound selected from a group of compounds represented by formula (1) as a first component, has a positive dielectric anisotropy, and has a nematic phase, and a liquid crystal display element containing the composition: | 2009-12-31 |
20090321686 | 1,4-BIS(2-THIENYLVINYL)BENZOL DERIVATIVES AND THEIR USE - The present invention relates to novel 1,4-bis(2-thienylvinyl)benzene derivatives, to conjugated polymers, dendrimers, blends, mixtures and formulations comprising same, and to the use thereof in electronic devices, in particular in polymeric organic light-emitting diodes. | 2009-12-31 |
20090321687 | Electroconductive Thermoplastic Resin Composition and Plastic Article Including the Same - Disclosed herein are an electrically conductive thermoplastic resin composition and a plastic article including the same. The electrically conductive thermoplastic resin composition comprises about 80 to about 99.9 parts by weight of a thermoplastic resin, about 0.1 to about 10 parts by weight of carbon nanotubes, about 0.1 to about 10 parts by weight of an impact modifier, based on a total of about 100 parts by weight of the thermoplastic resin and the carbon nanotubes, and about to about 10 parts by weight of conductive metal oxide, based on a total of about 100 parts by weight of the thermoplastic resin and the carbon nanotubes. | 2009-12-31 |
20090321688 | Carbon Nanotube Composition, Composite Having a Coated Film Composed of the Same, and Their Production Methods - The object of the present invention is to provide a carbon nanotube composition that does not impair the characteristics of the carbon nanotubes itself, allows the carbon nanotubes to be dispersed or solubilized in a solvent, does not cause separation or aggregation of the carbon nanotubes even during long-term storage, has superior electrical conductivity, film formability and moldability, can be easily coated or covered onto a base material, and the resulting coated film has superior moisture resistance, weather resistance and hardness; a composite having a coated film composed thereof; and, their production methods. In order to achieve this object, the present invention provides a carbon nanotube composition that contains a conducting polymer (a) or heterocyclic compound trimer (i), a solvent (b) and carbon nanotubes (c), and may additionally contain a high molecular weight compound (d), a basic compound (e), a surfactant (f), a silane coupling agent (g) and colloidal silica (h) as necessary; a composite having a coated film composed of the composition; and, their production methods. | 2009-12-31 |
20090321689 | METHOD FOR PRODUCING FINE PARTICLE DISPERSION AND FINE PARTICLE DISPERSION - Disclosed is a method for producing a fine particle dispersion such as a dispersion of metal fine particles which is superior in dispersibility and storage stability. Specifically disclosed is a method for producing a fine particle dispersion wherein fine particles of a metal or the like, having a mean particle diameter of between 1 nm and 150 nm for primary particles, are dispersed in an organic solvent. This method for producing a fine particle dispersion is characterized by comprising the steps of: reducing a metal ion by liquid phase reduction in an aqueous solution wherein the metal ion and a polymer dispersing agent are dissolved, thereby forming a fine particle dispersion aqueous solution wherein fine particles having a mean particle diameter of between 1 nm and 150 nm for the primary particles and dispersed with being coated by the polymer dispersing agent (Process 1); adding an aggregation accelerator into the fine particle dispersion aqueous solution, the resulting solution is agitated for agglomerating or precipitating the fine particles, and then the agglomerated or precipitated fine particles are separated from the aqueous solution, thereby obtaining fine particles comprised of one type or not less than two types of a metal, an alloy and a metallic compound (Process 2); and re-dispersing the thus-obtained fine particles into an organic solvent or the like which contains an organic solvent (A) as between 25% and 70% by volume having an amide group, a low boiling point organic solvent (B) as between 5% and 25% by volume having a boiling point of between 20° C. and 100° C. at a normal pressure, and an organic solvent (C) as between 5% and 70% by volume having a boiling point of higher than 100° C. at a normal pressure and comprised of an alcohol and/or a polyhydric alcohol having one or not less than two hydroxyl groups in a molecule thereof (Process 3). | 2009-12-31 |
20090321690 | Nickel-Rhenium alloy powder and conductor paste containing the same - The invention provides a nickel-rhenium alloy powder that comprises nickel as a main component, 0.1 to 10% by weight of rhenium and 50 to 10,000 ppm of silicon in terms of silicon atoms, and that is suitable, in particular, for the formation of an internal electrode layer for a multilayer ceramic electronic component. The obtained powder is homogeneously mixed and dispersed in an organic vehicle, together with other additives as needed, to prepare a conductor paste. When used in particular for forming an internal electrode of a multilayer ceramic electronic component, the nickel-rhenium alloy powder of the invention delays sintering initiation and slows down sintering progress during firing, even for extremely fine powders, while bringing the sintering shrinkage behaviors of electrode layers and ceramic layers closer to each other. Moreover, there occurs no electrode spheroidizing caused by oversintering. A thinner, dense internal electrode having excellent continuity can be formed as a result. | 2009-12-31 |
20090321691 | Process for producing surge absorbing material with dual functions - A kind of manufacturing method for dual functions with varistor material and device has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, which microstructural compositions include a glass substrate with high resistance and three kinds of low-resistance conductive or semiconductive particles in micron, submicron and nanometer size uniformly distributed in the glass substrate to provide with good surge absorbing characteristic. | 2009-12-31 |
20090321692 | Nanostructured material comprising semiconductor nanocrystal complexes - A material and corresponding method of making a material are disclosed. The material includes a first semiconductor material and a plurality of core semiconductor nanocrystals dispersed in the first semiconductor material. | 2009-12-31 |
20090321693 | Red colored composition and color filter using the same - A red colored composition including a pigment, binder resin, monomer, photopolymerization initiator, and organic solvent, wherein the pigment contains a diketopyrrolopyrrol-based red pigment and has an average primary particle diameter of at most 40 nm, and the binder resin contains at least one thermosetting resin of 5 to 12% by weight based on solid content of the composition, the thermosetting resin having a weight-average molecular weight of 25,00 to 20,000. | 2009-12-31 |
20090321694 | Optical 3D memory comprising multilayer particles that comprise a photoactive monomer bearing a photoisomerizable group - The invention relates to a core-shell-type multilayer particle comprising at least one layer B that comprises at least one photoactive monomer bearing a photoisomerizable chromophore and a rigid shell A. The photoactive monomer has the following formula (I): (I) in which: X denotes H or CH | 2009-12-31 |
20090321695 | CABLE CONTROL APPARATUS - A cable control apparatus comprises a carrier disposed on a loop of cable; one or more trigger points disposed on the loop of cable; a control mechanism to control movement of the loop of cable, the control mechanism comprising a plurality of sensors to sense the one or more trigger points, and a motor to impart movement to the loop of cable. The sensors are functionally connected to the motor, and the motor has at least two wheels about which the loop of cable is wrapped a plurality of times. A first sensor of the plurality of sensors stops the motor and reverses the direction of the cable to bring the carrier to a base location; a second sensor of the plurality of sensors stops the motor when the carrier reaches the base location; and a third sensor of the plurality of sensors restarts the motor. In one embodiment, the carrier takes the form of a predator for frightening animals. | 2009-12-31 |
20090321696 | LIFTING DEVICE - The invention relates to a lifting device ( | 2009-12-31 |
20090321697 | VIEWER FENCE - A viewer fence that can be rotated from a position of privacy to a position that allows one to view what is behind the fence. The boards of the fence are rotated automatically by a motor. The motor may be controlled remotely. | 2009-12-31 |
20090321698 | Panel Fence System and Method - In certain embodiments, a fence system includes a support member and a rail attached to the support member such that the rail extends across the support member. The fence system further includes a first panel and a second panel each comprising a primary panel portion having a first edge and a second edge. A first flange is located along at least a portion of the first edge of the primary panel portion, and a second flange is located along at least a portion of the second edge of the primary panel portion. The first and second panels are secured to the rail such that the second edge of the primary panel portion of the first panel is adjacent to the first edge of the primary panel portion of the second panel. The second flange of the first panel is matingly coupled to the first flange of the second panel. | 2009-12-31 |
20090321699 | Spring-Loaded Cable Barrier System and Method - In certain embodiments, a barrier system includes a first terminal post, a second terminal post, and a cable spanning at least a portion of the distance between the first terminal post and the second terminal post. The system further includes a first spring member having a first end coupled to the first terminal post and a second end coupled to the cable. The system further includes a second spring member having a first end coupled to the cable and a second end coupled to the second terminal post. The system further includes a line post positioned substantially between the first terminal post and the second terminal post and a line post guide member coupled to the line post, the line post guide member maintaining a portion of the cable in proximity to the line post and adapted to allow the cable to translate laterally with respect to the line post. | 2009-12-31 |
20090321700 | Cable Barrier System - A cable barrier system according to one or more aspects of the present disclosure includes a cable-release anchor; a line post having an internal cavity and a slot formed along a sidewall extending downward from a top end of the line post; a cable releasably held in tension by the cable-release anchor; and the cable releasably connected to the line post by a post-cable connector, the post-cable connector comprising an elongated portion having a loop, the elongated portion disposed substantially within the cavity and the loop extending through the slot exterior of the cavity, the cable slidingly disposed in the loop, wherein when an object impacts and deforms the line post toward ground level the cable is released from the deformed line post in a manner such that the cable tends to stay in tension and in contact with the impacting object. | 2009-12-31 |
20090321701 | Fence System - In certain embodiments, a fence system includes a first support member and a second support member. The fence system may include a rail coupled to the first and second support members such that the rail extends across the first and second support members. The first post and the second post are oriented in a first plane, and the rail is oriented in a second plane. The second plane is different than the first plane. The fence system may include a rollable infill material coupled to the rail. | 2009-12-31 |
20090321702 | Metal Baluster With Ornamental Ends - A metal baluster is provided which has first and second metal segments, where each of these metal segments comprises a first end and a second end. The first ends of the first metal segments include extension portions from mating engagement with one another and the second end of each metal segment is adapted for attachment to the underside of an elongated handrail or to a tread or floor. The second end of each of the metal segments further comprises an ornamental portion which is proximate the elongated handrail or the tread or the floor. Connection apparatuses provided for securing the engagement of the extension portions of the first metal segment and the second metal segment. In another embodiment, a metal baluster of the present invention may comprise three metal segments where the first two metal segments are adapted for attachment to the underside of an elongated rail or to tread or floor and has an ornamental portion proximate the first end. These first and second metal segments are joined together by a third metal segment which has two ends which are adapted from mating engagement with the second ends of the first and second segments. A balustrade is also provided which comprises a plurality of balusters as described above. | 2009-12-31 |
20090321703 | Post and Rail Coupling System - A plurality of similarly configured coupling component assemblies is provided. Each assembly includes a first coil spring and a second coil spring. Each coil spring is positioned in a hole. Each coil spring has an interior end of a reduced diameter with a fastener attaching the spring to the hole. Each coil spring has an exterior end extending a short distance outside of the hole. The exterior ends of adjacent opposing coil springs are adapted to interlock and join associated components of the system when rotated with respect to each other about a common axis of rotation. The coupling components also include a cylindrical rod with opposed ends within the opposing coil springs. Each rod has an axial length greater than the length of each coil spring and less than the axial length of two holes. | 2009-12-31 |
20090321704 | Baluster Assembly - A baluster assembly is adapted to be disposed between an armrest and a floor. The baluster assembly includes an adjustment element and a baluster post. The adjustment element has a first end adapted to be fixed on the floor, a second end opposite to the first end, and a screw-threaded section between the first and second ends. A nut engages and is movable on the screw-threaded section. The baluster post has a sleeve-endportion sleeved onto the screw-threaded section and abutting against the nut, and an insert end opposite to the sleeve-end portion and adapted to be fitted into an insert hole in the armrest. The baluster post is co-movable with the nut relative to the screw-threaded section. A decorative cover is sleeved on the sleeve-end portion to cover the nut and junctions between the nut and the sleeve-end portion and between the nut and the screw-threaded section. | 2009-12-31 |
20090321705 | PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A phase change memory device includes a semiconductor substrate, a first conductive pattern formed on the semiconductor substrate, a second conductive pattern contacting an upper surface of the first conductive pattern and having a diameter less than a diameter of the first conductive pattern, and a phase change material layer contacting the second conductive pattern. | 2009-12-31 |
20090321706 | Resistive Memory Devices with Improved Resistive Changing Elements - An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states. | 2009-12-31 |
20090321707 | Intersubstrate-dielectric nanolaminate layer for improved temperature stability of gate dielectric films - Embodiments of an apparatus with a crystallization-resistant high-κ dielectric and nanolaminate layer stack in a device and methods for forming crystallization-resistant high-κ dielectric and nanolaminate layer stack are generally described herein. Other embodiments may be described and claimed. | 2009-12-31 |
20090321708 | PHASE CHANGE MEMORY DEVICE HAVING PROTECTIVE LAYER AND METHOD FOR MANUFACTURING THE SAME - A phase change memory device includes a plurality of phase change structures, each with a phase change material layer, disposed on a semiconductor substrate, a first protective layer formed to cover surfaces of the plurality of phase change structures, an atom adsorption enhancement layer formed on a surface of the first protective layer, and a second protective layer formed on a surface of the atom adsorption enhancement layer. | 2009-12-31 |
20090321709 | MEMORY ELEMENT, MEMORY APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT - A memory element comprises a first electrode, a second electrode, and a resistance variable film | 2009-12-31 |
20090321710 | THREE-TERMINAL CASCADE SWITCH FOR CONTROLLING STATIC POWER CONSUMPTION IN INTEGRATED CIRCUITS - A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration. | 2009-12-31 |
20090321711 | NONVOLATILE MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF - A nonvolatile memory element ( | 2009-12-31 |
20090321712 | PLASMONIC COUPLING DEVICES - A plasmonic coupling device ( | 2009-12-31 |
20090321713 | METHOD OF CONTROLLING ACTIVE LAYER OF III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention is to provide a method for controlling an active layer of a Hi-nitride semiconductor light emitting device by doping a barrier layer(s) selected from the active layer to suppress light emission in a specific well layer(s). | 2009-12-31 |
20090321714 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side. | 2009-12-31 |
20090321715 | HETERO-CRYSTALLINE STRUCTURE AND METHOD OF MAKING SAME - A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth. | 2009-12-31 |
20090321716 | Semiconductor Nanowire Transistor - A nanowire wrap-gate transistor is realised in a semiconductor material with a band gap narrower than Si. The strain relaxation in the nanowires allows the transistor to be placed on a large variety of substrates and heterostructures to be incorporated in the device. Various types of heterostructures should be introduced in the transistor to reduce the output conductance via reduced impact ionization rate, increase the current on/off ratio, reduction of the sub-threshold slope, reduction of transistor contact resistance and improved thermal stability. The parasitic capacitances should be minimized by the use of semi-insulating substrates and the use of cross-bar geometry between the source and drain access regions. The transistor may find applications in digital high frequency and low power circuits as well as in analogue high frequency circuits. | 2009-12-31 |
20090321717 | COMPOSITIONALLY-GRADED QUANTUM-WELL CHANNELS FOR SEMICONDUCTOR DEVICES - A compositionally-graded quantum well channel for a semiconductor device is described. A semiconductor device includes a semiconductor hetero-structure disposed above a substrate and having a compositionally-graded quantum-well channel region. A gate electrode is disposed in the semiconductor hetero-structure, above the compositionally-graded quantum-well channel region. A pair of source and drain regions is disposed on either side of the gate electrode. | 2009-12-31 |
20090321718 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer includes a carbon nanotube structure comprised of carbon nanotubes. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The carbon nanotube structure is connected to both the source electrode and the drain electrode, and an angle exist between each carbon nanotube of the carbon nanotube structure and a surface of the semiconductor layer, and the angle ranges from about 0 degrees to about 15 degrees. | 2009-12-31 |
20090321719 | NOVEL MATERIAL AND PROCESS FOR INTEGRATED ION CHIP - An integrated ion chip for a large scale quantum device of interconnected ion (or other charged particles) traps each holding a small number of particles for a finite period of time, in a preferred embodiment using sapphire as the substrate, having an internal trapping, translation, and quantum manipulation zones and having a first set of electrodes and a second set of electrodes for trapping ions and for quantum manipulations, in a preferred embodiment using silicon carbide (and materials of similar characteristics) as a core structure material, and utilizing unique fabrication processes using micromachining and thin film techniques. | 2009-12-31 |
20090321720 | SYSTEMS AND DEVICES FOR QUANTUM PROCESSOR ARCHITECTURES - A quantum processor may employ a heterogeneous qubit-coupling architecture to reduce the average number of intermediate coupling steps that separate any two qubits in the quantum processor, while limiting the overall susceptibility to noise of the qubits. The architecture may effectively realize a small-world network where the average qubit has a low connectivity (thereby allowing it to operate substantially quantum mechanically) but each qubit is within a relatively low number of intermediate coupling steps from any other qubit. To realize such, some of the qubits may have a relatively high connectivity, and may thus operate substantially classically. | 2009-12-31 |
20090321721 | HIGH PERFORMANCE FIELD EFFECT TRANSISTORS COMPRISING CARBON NANOTUBES FABRICATED USING SOLUTION BASED PROCESSING - The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices. | 2009-12-31 |
20090321722 | STACKED ELECTRO-OPTICALLY ACTIVE ORGANIC DIODE WITH INORGANIC SEMICONDUCTOR CONNECTION LAYER - A stacked electro-optically active organic diode has an anode electrode ( | 2009-12-31 |
20090321723 | ORGANIC ELECTRONIC MATERIAL, ORGANIC ELECTRONIC DEVICE, AND ORGANIC ELECTROLUMINESCENT DEVICE - An object of the present invention is to provide an organic electronic material that can be easily formed into a multilayer structure. A further object of the present invention is to provide an organic electronic device and an organic EL device that exhibit a better emission efficiency and a better emission lifetime than heretofore achieved. In order to achieve these objects, an organic electronic material is provided, the material includes a polymer or oligomer that has at least one polymerizable substituent and a hole-transporting repeat unit. | 2009-12-31 |
20090321724 | Material for Producing a Functional Layer of an Organic Electronic Component - The invention relates to a material for producing a functional layer of an organic electronic component, in particular a material suitable for processing by printing. In the material proposed according to the invention, a functional substance is present in a polymer matrix, e.g. in dissolved or suspended fashion. | 2009-12-31 |
20090321725 | ORGANIC EL DEVICE AND MANUFACTURING METHOD THEREOF - An organic EL device comprising a semiconductor element A having a source electrode, a drain electrode, and a gate electrode, a semiconductor element B having a source electrode, a drain electrode, and a gate electrode connected to the source electrode or the drain electrode of the semiconductor element A, and an organic EL element having a pixel electrode connected to the drain electrode of the semiconductor element B, in which the source electrode and the drain electrode of the semiconductor element A and the gate electrode of the semiconductor element B are set on the same plane. | 2009-12-31 |
20090321726 | ENCAPSULATION FOR ORGANIC OPTOELECTRONIC DEVICES - An organic optoelectronic device includes a substrate, an anode, a cathode, an active region comprising an organic material, an encapsulation that isolates the active region from an ambient environment, wherein the encapsulation comprises a housing, and a first hermetically sealed electrical path through the housing. | 2009-12-31 |
20090321727 | ORGANIC TRANSISTOR ARRAY, DISPLAY DEVICE AND METHOD OF FABRICATING DISPLAY DEVICE - An organic transistor array includes gate electrodes provided on a substrate, source and drain electrodes provided above or below the gate electrodes via a gate insulator layer, and an organic semiconductor layer opposing the gate electrodes via the gate insulator layer, and forming a channel region between mutually adjacent source and drain electrodes. The organic transistor array in a plan view is sectioned into sections each forming a single pixel, and each section has a closest packed structure. | 2009-12-31 |
20090321728 | TRANSPARENT DISPLAY APPARATUS - A transparent display apparatus is provided that is constructed to transmit or block a light of images selectively according to a supply of electric power to a conventional transparent organic light emitting diode. The transparent display apparatus includes a transparent organic light emitting diode having a glass substrate, a transparent anode, a hole transport layer, an emitting layer, an electron transport layer and a transparent cathode. The transparent display apparatus includes an insulating layer stacked on the transparent cathode, and first and second transparent ITOs stacked on the insulating layer to deliver electromotive force onto an entire surface and to transmit or block the light of images according to the on/off state of a power source. The transparent display apparatus also includes an electro chromic layer provided between the first and the second transparent ITOs and including transparent and colorless chemicals. The electro chromic layer forms a color through oxidation-reduction reaction of the chemicals according to the on/off state of the power source to absorb or block the light of images. The transparent display apparatus further includes a substrate stacked on the second transparent ITO. | 2009-12-31 |
20090321729 | Anthracene Derivatives and Organic Electroluminescent Devices Made by Using the Same - An anthracene derivative represented by the following general formula (1) which enables an organic electroluminescence device to exhibit a great efficiency of light emission and uniform light emission even at high temperatures since crystallization is suppressed and no thermal decomposition takes place during vapor deposition and an organic electroluminescence device utilizing the derivative, are provided. | 2009-12-31 |
20090321730 | COMPOSITIONS OF DOPED, CO-DOPED AND TRI-DOPED SEMICONDUCTOR MATERIALS - Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion. | 2009-12-31 |
20090321731 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME - A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented. | 2009-12-31 |
20090321732 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME - A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented. | 2009-12-31 |
20090321733 | METAL HETEROCYCLIC COMPOUNDS FOR DEPOSITION OF THIN FILMS - Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate. | 2009-12-31 |
20090321734 | CAPACITOR-BASED METHOD FOR DETERMINING AND CHARACTERIZING SCRIBE SEAL INTEGRITY AND INTEGRITY LOSS - One embodiment of the present invention relates to a scribe seal integrity detector. In this embodiment a scribe seal integrity detector is formed in an integrated circuit chip die. The scribe seal integrity comprises a scribe seal structure that extends along at least a portion of the periphery of the integrated chip die and a detector test structure. The detector test structure and the scribe seal form an electrical system configured to be accessed for a monitoring of one or more electrical parameters to determine and characterize scribe seal integrity of the integrated circuit chip die. The results of the electric measurements are analyzed for statistically relevant reliability characterization. Other methods and circuits are also disclosed. | 2009-12-31 |
20090321735 | Electrical Antifuse and Method of Programming - An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures. | 2009-12-31 |
20090321736 | IMAGE SENSOR CAPABLE OF INCREASING PHOTOSENSITIVITY AND METHOD FOR FABRICATING THE SAME - An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode. | 2009-12-31 |
20090321737 | THIN FILM TRANSISTOR - A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced. | 2009-12-31 |
20090321738 | Display apparatus using oxide diode - Provided may be a display apparatus that uses oxide diodes having a nano rod structure, for example, nano-rod diodes formed of a ZnO group material. The display apparatus may include a substrate, a thin film transistor layer on the substrate, and a light emitting layer on the thin film transistor layer, wherein the light emitting layer may include a plug metal layer on the thin film transistor layer, a plurality of nano-rod diodes vertically formed on the plug metal layer, and a transparent electrode on the nano-rod diodes. | 2009-12-31 |
20090321739 | Array substrate for flat display device and method for fabricating the same - The present invention relates to an array substrate for a flat display device and a method for fabricating the same, in which a number of masks is reduced for reducing a cost and improving a device performance. The array substrate includes a gate electrode formed on an insulating substrate, a gate insulating film formed on an entire surface of the insulating substrate including the gate electrode, an active layer formed on the gate insulating film opposite to the gate electrode having a stack of a polysilicon layer and an amorphous silicon layer each having a width greater than the gate electrode, a source electrode and a drain electrode separated from each other at a portion of the active layer and formed over the active layer with an ohmic contact layer disposed therebetween, an interlayer insulating film formed on an entire surface of the insulating substrate having a contact hole to expose a predetermined portion of the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole. | 2009-12-31 |
20090321740 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A TFT-LCD array substrate and a manufacturing method thereof. The array substrate comprises a gate line, a data line, and a pixel electrode, and the pixel electrode is disposed in a pixel region defined by the intersection between the gate line and the data line. In the pixel region, a partition groove for forming a pixel electrode pattern is provided at the periphery of the pixel electrode. This structure is helpful to form a pixel electrode pattern by a lift-off process, which significantly reduces the production cost and improves the production yield. | 2009-12-31 |
20090321741 | STORAGE CAPACITOR IN OLED PIXELS AND DRIVING CIRCUITS AND METHOD FOR FORMING THE SAME - An electroluminescence device includes a substrate and a plurality of pixels. Each pixel includes a first area including at least a first capacitor and a second capacitor, the first capacitor including a first conductive layer, a first dielectric layer over the first conductive layer, and a second conductive layer over the first dielectric layer, and the second capacitor including the second conductive layer, a second dielectric layer over the second conductive layer, and a third conductive layer over the second dielectric layer, and a transistor in a second area. The transistor includes a first semiconductor layer formed on the substrate, a first gate oxide layer over the first semiconductor layer, a fourth conductive layer over the first gate oxide layer, and a seventh conductive layer contacting the first semiconductor layer, wherein the seventh conductive layer is formed of the same conductive film as the second conductive layer. | 2009-12-31 |
20090321742 | THIN FILM TRANSISTOR - A thin film transistor (TFT) including a substrate, a buffer layer, a patterned poly-silicon layer, a gate dielectric layer, and a number of gate electrodes is provided. The patterned poly-silicon layer is disposed on the buffer layer and the substrate. The patterned poly-silicon layer includes a number of channel regions, at least one heavily doped region, two lightly doped regions, a source region, and a drain region. The heavily doped region connects two adjacent channel regions. The source region connects one of the two outmost channel regions through one of the lightly doped regions. The drain region connects the other outmost channel region through the other lightly doped region. The gate dielectric layer covers the patterned poly-silicon layer. The gate electrodes are disposed on the gate dielectric layer and electrically connected to one another. Each gate is disposed above each channel region and a part of the heavily doped region. | 2009-12-31 |
20090321743 | THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A thin film transistor includes, as a buffer layer, an amorphous semiconductor layer having nitrogen or an NH group between a gate insulating layer and source and drain regions and at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced. | 2009-12-31 |
20090321744 | BUFFER LAYER FOR PROMOTING ELECTRON MOBILITY AND THIN FILM TRANSISTOR HAVING THE SAME - A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced. | 2009-12-31 |
20090321745 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of Al | 2009-12-31 |
20090321746 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A low on-resistance silicon carbide semiconductor device is provided that includes an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. | 2009-12-31 |
20090321747 | MULTILAYERED SEMICONDUCTOR WAFER AND PROCESS FOR MANUFACTURING THE SAME - The invention relates to a process for manufacturing a multilayered semiconductor wafer comprising a handle wafer ( | 2009-12-31 |
20090321748 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Provided are a light emitting diode and a method for manufacturing the same. In the method, a semiconductor layer is formed, and a mask layer is formed on the semiconductor layer. Laser is irradiated onto a scribing region of the mask layer to divide the semiconductor layer into a plurality of light emitting diodes. The scribing region is etched, and then the mask layer is removed. The plurality of light emitting diodes are then separated from each other. | 2009-12-31 |
20090321749 | Light Emitting Device and Method of Manufacturing a Light Emitting Device - A light emitting device comprising a heat sink, a dielectric layer arranged on the heat sink, a heat conductive layer arranged on the dielectric layer, an undercoating arranged on at least a part of the heat conductive layer, and a light emitting chip attached to the heat conductive layer by means of the undercoating. | 2009-12-31 |
20090321750 | SURFACE MOUNT DEVICE - The disclosed subject matter is directed to a reliable surface mount device using a ceramic package, and includes LED devices that are simply composed and incorporate the use of the surface mount device. The surface mount device can include a ceramic package, a semiconductor optical chip mounted in the package, two soldering pads electrically connected to the chip electrodes and at least one dummy soldering pad located on either side of the soldering pads. Thermal fatigue located at or in the soldering connections connecting the chip electrodes to a mounting board can be reduced because the distance between the soldering pads can be reduced. The dummy soldering pad that is electrically insulated can allow the device to maintain a desirable location with poise during the reflow soldering process that occurs during manufacture, and can also reduce shear stress present at the soldering connections. Thus, the surface mount device and the LED device using the disclosed structure can maintain a high reliability even under harsh environmental conditions. | 2009-12-31 |
20090321751 | LIGHT EMITTING APPARATUS AND ELECTRONIC DEVICE - A light emitting apparatus includes a light emitting element formed on a surface of a substrate and a light receiving element formed on an area other than an area overlapping the light emitting element on the surface of the substrate, the light receiving element detecting light emitted from the light emitting element. | 2009-12-31 |
20090321752 | ELECTRIC DEVICES AND METHODS OF MANUFATURING THE SAME - A process for manufacturing an electrical device, the process comprising the steps: providing a substrate; bringing a stamp into contact with the substrate whereby areas of the substrate contacted by the stamp have decreased wettability; and depositing a liquid comprising an electrically active material over areas of the substrate located between the areas of decreased wettability. | 2009-12-31 |
20090321753 | Light Emitting Device and Method of Manufacturing the Same - There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line. | 2009-12-31 |
20090321754 | SIGNAL LIGHT USING PHOSPHOR COATED LEDS - A method for creating an improved signal light is disclosed. For example, the improved signal light includes a housing, one or more first type of light emitting diodes (LEDs) emitting a light energy having a first dominant wavelength deployed in the housing, one or more second type of LEDs emitting a light energy having a second dominant wavelength deployed in the housing, a filter and a mixer. The filter may filter the light energy of the one or more second type of LEDs such that only a third dominant wavelength passes from the one or more second type of LEDs. The mixer may mix the light energy having the first dominant wavelength and the filtered light energy having the third dominant wavelength to form a light energy having a desired fourth dominant wavelength. | 2009-12-31 |
20090321755 | NANOCRYSTAL MIXTURE AND LIGHT-EMITTING DIODE USING THE SAME - Disclosed is a light-emitting device. The light-emitting device comprises a blue light-emitting source and a light-emitting source. The light-emitting source includes first semiconductor nanocrystals and second semiconductor nanocrystals. The first and second nanocrystals emit lights of different wavelengths from each other to produce a color complementary to blue. The first and second semiconductor nanocrystals are spatially clustered to form first and second composites respectively. | 2009-12-31 |
20090321756 | LED Package Structure and Method of Packaging the Same - An LED package structure includes a first LED chip, a second LED chip arranged on the minor light-emitting surface of the first LED chip, a conductive unit connected between the electrode areas for parallel or serially connecting the two LED chips together, and two external electric conduction units for electrically connecting both the first and second electrode areas of the first LED chip with an external circuit. | 2009-12-31 |
20090321757 | Dislocation-based light emitter - A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength. | 2009-12-31 |
20090321758 | LED WITH IMPROVED EXTERNAL LIGHT EXTRACTION EFFICIENCY - Light-emitting semiconductor devices are provided with certain layers in an effort to produce increased luminous intensity when compared to conventional light-emitting devices. The light-emitting semiconductor device includes a light-emitting semiconductor; a first transparent layer disposed over the light-emitting semiconductor; a first wavelength-converting layer disposed over the first transparent layer, wherein an upper surface of the wavelength-converting layer is curved; and a second transparent layer disposed over the wavelength-converting layer, wherein an upper surface of the second transparent layer is curved or tapered. | 2009-12-31 |
20090321759 | SURFACE-TEXTURED ENCAPSULATIONS FOR USE WITH LIGHT EMITTING DIODES - Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to extract light. In an aspect, a method includes encapsulating a light emitting diode with an encapsulation having a surface texture configured to extract light. In an aspect, a light emitting diode lamp is provided that includes a package, at least one light emitting diode disposed within the package, and an encapsulation formed upon the at least one light emitting diode having a surface texture configured to extract light. In another aspect, a method includes determining one or more regions of an encapsulation, the encapsulation configured to cover a light emitting diode, and surface-texturing each region of the encapsulation with one or more geometric features that are configured to extract light. | 2009-12-31 |
20090321760 | FABRICATION OF COMPACT OPTO-ELECTRONIC COMPONENT PACKAGES - A wafer-level method of fabricating an opto-electronic component package, in which the opto-electronic component is mounted to a semiconductor wafer having first and second surfaces on opposite sides of the wafer. The method includes etching vias in the first surface of the semiconductor wafer. The first surface and surfaces in the vias are metallized, and the metal is structured to define a thermal pad and to define the anode and cathode contact pads. A carrier wafer is attached on the side of the semiconductor wafer having the first surface, and the semiconductor wafer is thinned from its second surface to expose the metallization in the vias. Metal is provided on the second surface, and the metal is structured to define a die attach pad and additional anode and cathode pads for the opto-electronic component. The opto-electronic component is mounted on the die attach pad and a protective cover is formed over the opto-electronic component. | 2009-12-31 |
20090321761 | COATING FOR CONVERTING OPTICAL SPECTRUM AND LED CHIP PACKAGE MODULE USING THE SAME - A coating for converting optical spectrum includes: a transparent colloid layer and an emitter material unit. The emitter material unit is used to convert one part of a short-wavelength band of a light source into a long-wavelength band. The emitter material unit has at least one first emitter body and at least one second emitter body both mixed with the transparent colloid layer, the at least one first emitter body is an inorganic silicate compound, and the at least one second emitter body is aan organic dye. Hence, the color rendering index (CRI) and the range of color temperature of white light generated by an LED chip package module using the coating are increased according to the function of the emitter material unit for converting one part of a short-wavelength band of a light source into a long-wavelength band. | 2009-12-31 |
20090321762 | LIGHT EMITTING DIODE | 2009-12-31 |
20090321763 | LIGHT EMITTING DIODE | 2009-12-31 |
20090321764 | Method of Manufacturing Organic Light Emitting Device and Organic Light Emitting Device Manufactured by Using The Method - Disclosed is a method of manufacturing an organic light emitting device, an organic light emitting device manufactured by using the method, and an electronic device including the organic light emitting device. The method includes (a) forming an insulating layer on a lower electrode, (b) etching the insulating layer to form an opening ranging from an upper surface of the insulating layer to the lower electrode so that an overhang structure having a lowermost circumference that is larger than an uppermost circumference is formed, (c) forming a conductive layer on an upper surface of the lower electrode in the opening and a surface of the insulating layer other than the overhang structure, (d) forming an organic material layer on the conductive layer formed on the upper surface of the lower electrode in the opening, and (e) forming an upper electrode on an upper surface of the conductive layer disposed on the upper surface of the insulating layer and an upper surface of the organic material layer. | 2009-12-31 |
20090321765 | LIGHT EMITTING DIODE - An LED includes an LED die forming an emitting surface for emitting light generated thereby and a packaging layer encapsulating the LED die. The packaging layer includes an end surface facing the emitting surface of the LED die, and a lateral surface extending downwardly from an outer periphery of the end surface along an axial direction of the packaging layer. The end surface forms a convex portion confronting the LED die and an emitting portion surrounding the convex portion. Light of the LED die traveling to the convex portion is reflected to the lateral surface, and then is reflected to the emitting portion, and finally travels through the emitting portion to an outside. | 2009-12-31 |
20090321766 | LED - An LED includes a base having a depression, a chip disposed in the depression, an encapsulation received in the depression for encapsulating the chip, and a base. Two spaced electrodes are attached to a bottom of the base and electrically connect with the chips. A porous heat sink extends through the base and reaches the depression, contacting the chip. | 2009-12-31 |
20090321767 | ASPHERICAL LED ANGULAR LENS FOR WIDE DISTRIBUTION PATTERNS AND LED ASSEMBLY USING THE SAME - The present invention discloses an aspherical LED angular optical lens for wide distribution patterns and an LED assembly using the same. The optical lens comprises a concave surface on a source side and a convex surface on a project side. The LED assembly comprising the optical lens can accumulate light emitted from the LED die and generate a peak intensity of the wide angular circle distribution pattern which is greater than 120° and smaller than 180°. The present invention only uses a single optical lens capable of accumulating light and forming a required distribution pattern to satisfy the requirement of a luminous flux ratio greater than 85% and the requirement of an illumination, a flash light of a cell phone or a flash light of a camera. | 2009-12-31 |
20090321768 | LED - An LED includes a base having a depression, a chip disposed in the depression and an encapsulation received in the depression for encapsulating the chip and a heat sink. The heat sink includes a plurality of fins formed on a top of the base and a heat-conductive material filled in the space between adjacent fins. The heat-conductive material has a plurality of pores therein. | 2009-12-31 |
20090321769 | METHOD FOR COATING SEMICONDUCTOR DEVICE USING DROPLET DEPOSITION - Methods and systems for coating of semiconductor devices using droplets of wavelength conversion or phosphor particles in a liquid medium. A plurality of nozzles delivers a controlled amount of the matrix material to the surface of the semiconductor device, with each of said nozzles having an opening for the matrix material to pass. The opening has a diameter wherein the diameter of the phosphor particles is less than or approximately equal to one half the diameter of the opening. The phosphor particles are also substantially spherical or rounded. The nozzles are typically arranged on a print head that utilizes jet printing techniques to cover the semiconductor device with a layer of the matrix material. The methods and systems are particularly applicable to covering LEDs with a layer of phosphor materials. | 2009-12-31 |
20090321770 | Semiconductor Light-Emitting Device - The disclosed subject matter includes reliable semiconductor light-emitting devices having a favorable light distribution using an LED chip, which can emit light having a different color as compared to that emitted directly by the LED chip. The semiconductor light-emitting device can include an LED chip having an electrode, a phosphor layer located on the LED chip except for the electrode, a bonding wire connected to the electrode, and a light-reflecting resin. The light-reflecting resin can be disposed on a light-emitting surface that is exposed around the electrode and on the electrode including the bonding wire, and can prevent the LED chip from exhibiting a leak of light that is not wavelength-converted via the phosphor layer, while increasing light that passes through the phosphor layer. In addition, the light-reflecting resin can protect the bonding wire from vibration, etc. Thus, the disclosed subject matter can provide reliable semiconductor light-emitting devices having high brightness without substantial color variability and that can emit various colored light(s). | 2009-12-31 |
20090321771 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light. | 2009-12-31 |
20090321772 | LIGHT SOURCE - A light source that restricts the heat accumulation in the phosphor. The light source includes: a substrate | 2009-12-31 |
20090321773 | LED PACKAGE FRAME AND LED PACKAGE HAVING THE SAME - An LED package frame includes an LED chip and a heat conductive member made of high heat conductivity material. The heat conductive member has a receiving part at a lateral portion, and is mounted with the LED chip. A lead-coating assembly configured to be inserted into the receiving part of the heat conductive member, including a lead is inserted at one end into the receiving part of the heat conductive member, and electrically connected to the LED chip. An electrically insulating layer is placed in tight contact between the lead and the receiving part of the heat conductive member isolates the lead from the receiving part. With the lead inserted into the heat conductive member, it is possible to reduce size while maintaining high heat conductivity and stability. | 2009-12-31 |
20090321774 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optical semiconductor device can have a first lead for an optical semiconductor chip to be mounted on and a second lead for joining to a wire extending from the optical semiconductor chip. The device can be configured to be capable of reducing the possibility of a break of the wire even under a thermal shock and the like. The optical semiconductor device can include a first lead for an optical semiconductor chip to be mounted on, a second lead for joining to a wire (for example, gold wire) extending from the optical semiconductor chip mounted on the first lead; a holder part for supporting the first lead and the second lead at two locations each; a lens part; and a light-transmitting sealing part. The second lead can be separated into two lead pieces with a predetermined gap (≠0) therebetween as seen in a plan view, or with certain bend configurations as shown in side views, within the inside space of the holder part by which the second lead is supported at two locations. | 2009-12-31 |
20090321775 | LED with Reduced Electrode Area - A light source and method for fabricating the same are disclosed. The light source includes a substrate and first and second semiconductor layers that surround an active layer. The first layer includes a material of a first conductivity type adjacent to the substrate. The active layer overlies the first layer and generates light when holes and electrons recombine therein. The second layer includes a material of a second conductivity type overlying the active layer, the second layer having a first surface overlying the active layer and a second surface opposite to the first surface. A trench extends through the second layer and the active layer into the first layer. The trench has electrically insulating walls. A first electrode is disposed in the trench such that the first electrode is in electrical contact with the first layer, and the second electrode is in electrical contact with the second layer. | 2009-12-31 |