48th week of 2014 patent applcation highlights part 15 |
Patent application number | Title | Published |
20140346429 | Semiconductor Constructions and Methods of Forming Memory Cells - Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material. | 2014-11-27 |
20140346430 | MEMORY DEVICE - Microelectronic device, comprising a substrate, a first electrode arranged above the substrate, a first resistive switch and a resistivity structure coupled with each other, wherein the first resistive switch and the resistivity structure are arranged in a single layer of the device, and a second electrode arranged above the layer that includes the first resistive switch and the resistivity structure, wherein the first resistive switch and the resistivity structure are coupled with the first and the second electrode. | 2014-11-27 |
20140346431 | Memory Structures, Memory Arrays, Methods of Forming Memory Structures and Methods of Forming Memory Arrays - Some embodiments include methods of forming memory structures. An electrically insulative line is formed over a base. Electrode material is deposited over the line and patterned to form a pair of bottom electrodes along the sidewalls of the line. Programmable material is formed over the bottom electrodes, and a top electrode is formed over the programmable material. The bottom electrodes may each contain at least one segment which extends at angle of from greater than 0° to less than or equal to about 90° relative to a planar topography of the base. Some embodiments include memory structures having a bottom electrode extending upwardly from a conductive contact to a programmable material, with the bottom electrode having a thickness of less than or equal to about 10 nanometers. Some embodiments include memory arrays and methods of forming memory arrays. | 2014-11-27 |
20140346432 | ON/OFF RATIO FOR NONVOLATILE MEMORY DEVICE AND METHOD - A switching device includes a first dielectric material formed overlying a substrate. A bottom wiring material and a switching material are sequentially formed overlying the first dielectric material. The bottom wiring material and the switching material are patterned and etched to form a first structure having a top surface region and a side region. The first structure includes a bottom wiring structure and a switching element having the top surface region including an exposed region. A second dielectric material is formed overlying the first structure. A first opening region is formed in a portion of the second dielectric layer to expose a portion of the top surface region. A dielectric side wall structure is formed overlying a side region of the first opening region. A top wiring material including a conductive material is formed overlying the top surface region to be directly contact with the switching element. | 2014-11-27 |
20140346433 | MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STORAGE ELEMENTS AND METHODS OF FORMING THE SAME - In some embodiments, a memory array is provided that includes (1) a first memory cell having (a) a first conductive line; (b) a first bipolar storage element formed above the first conductive line; and (c) a second conductive line formed above the first bipolar storage element; and (2) a second memory cell formed above the first memory cell and having (a) a second bipolar storage element formed above the second conductive line; and (b) a third conductive line formed above the second bipolar storage element. The first and second memory cells share the second conductive line; the first bipolar storage element has a first storage element polarity orientation within the first memory cell; the second bipolar storage element has a second storage element polarity orientation within the second memory cell; and the second storage element polarity orientation is opposite the first storage element polarity orientation. Numerous other aspects are provided. | 2014-11-27 |
20140346434 | NONVOLATILE VARIABLE RESISTANCE ELEMENT - According to one embodiment, a nonvolatile variable resistance element includes a first electrode, a second electrode, a variable resistance layer, and a dielectric layer. The second electrode includes a metal element. The variable resistance layer is arranged between the first electrode and the second electrode. A resistance change is reversibly possible in the variable resistance layer according to move the metal element in and out. The dielectric layer is inserted between the second electrode and the variable resistance layer and has a diffusion coefficient of the metal element smaller than that of the variable resistance layer. | 2014-11-27 |
20140346435 | MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS - A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (CMO), which, in turn, can include a first layer of CMO including mobile oxygen ions, and a second layer of CMO formed in contact with the first layer of CMO to cooperate with the first layer of CMO to form an ion obstruction barrier. The ion obstruction barrier is configured to inhibit transport or diffusion of a subset of mobile ion to enhance, among other things, memory effects and cycling endurance of memory cells. At least one layer of an insulating metal oxide that is an electrolyte to the mobile oxygen ions and configured as a tunnel barrier is formed in contact with the second layer of CMO. | 2014-11-27 |
20140346436 | PRINTABLE INKS WITH SILICON/GERMANIUM BASED NANOPARTICLES WITH HIGH VISCOSITY ALCOHOL SOLVENTS - Silicon based nanoparticle inks are formulated with viscous polycyclic alcohols to control the rheology of the inks. The inks can be formulated into pastes with non-Newtonian rheology and good screen printing properties. The inks can have low metal contamination such that they are suitable for forming semiconductor structures. The silicon based nanoparticles can be elemental silicon particles with or without dopant. | 2014-11-27 |
20140346437 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of In | 2014-11-27 |
20140346438 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm. | 2014-11-27 |
20140346439 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part. | 2014-11-27 |
20140346440 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode. | 2014-11-27 |
20140346441 | Semiconductor Layer Including Compositional Inhomogeneities - A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer. | 2014-11-27 |
20140346442 | MATERIALS AND METHODS FOR THE PREPARATION OF NANOCOMPOSITES - Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices. | 2014-11-27 |
20140346443 | PLASMONIC GRAPHENE DEVICES - An integrated graphene-based structure comprises an N-dimensional array of elements formed on a surface of a substrate. The N-dimensional array of elements includes a plurality of rows. Each respective row in the plurality of rows comprises a corresponding plurality of elements formed along a first dimension. Each element in the corresponding plurality of elements comprising at least one graphene stack and separated from an adjacent element along the first dimension by a first average spatial separation thereby resulting in a first periodicity in lateral spacing along the first dimension. Each respective row in the plurality of rows is separated from an adjacent row along a second dimension by a second average spatial separation, thereby resulting in a second periodicity in lateral spacing along the second dimension. The N-dimensional array exhibits a set of characteristic electromagnetic interference properties in response to electromagnetic radiation incident on the N-dimensional array. | 2014-11-27 |
20140346444 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A display device includes a power line configured to transmit an electric current. The display device further includes a plurality of pixel electrode units associated with a single pixel of the display device and configured to share the electric current. The display device further includes a common electrode overlapping the plurality of pixel electrode units. The display device further includes a plurality of light-emitting units associated with the single pixel of the display device and disposed between the common electrode and the plurality of pixel electrode units, wherein each light-emitting unit of the plurality of light-emitting units overlaps a pixel electrode unit of the plurality of pixel electrode units. | 2014-11-27 |
20140346445 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device (OLED) may include a first substrate with an element region and an encapsulation region surrounding the element region, a second substrate facing the first substrate, an organic light-emitting element interposed between the first substrate and the second substrate and formed in the element region, and an encapsulant interposed between the first substrate and the second substrate and formed in the encapsulation region. The encapsulant may include both a first encapsulant and a second encapsulant. The second encapsulant formed within the first encapsulant and is adjacent to at least one of the first substrate and the second substrate. | 2014-11-27 |
20140346446 | IRIDIUM COMPLEX AND ORGANIC LIGHT EMITTING DIODE USING THE SAME - An iridium complex having at least two 2-(thiophen-2-yl)quinolone ligands is provided. The iridium complex of the present invention may be configured as host material or dopant in organic light emitting diode devices. The optoelectronic element of the present invention is provided with advantages such as high efficiency, high brightness, high color saturation and good thermal and chemical stability so as to improve the performance of organic light emitting diode devices. | 2014-11-27 |
20140346447 | LIGHT EMITTING DISPLAY AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes a pixel defining layer including a plurality of pixel defining layer elements, on a substrate; a first electrode in a space defined by the substrate and the pixel defining layer; a light emitting layer in a space defined by the first electrode and the pixel defining layer; and a second electrode on the light emitting layer and the pixel defining layer. The second electrode includes a plurality of layers, and an insulating layer between the plurality of layers, overlapping the light emitting layer, and exposing a layer among the plurality of layers in an area corresponding to the pixel defining layer. | 2014-11-27 |
20140346448 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes an organic light-emitting device in which a pixel electrode, an intermediate layer that includes an emissive layer, and a cathode electrode are sequentially stacked. The cathode contact unit includes a cathode bus line that is formed on the same layer as the pixel electrode and contacts the cathode electrode, a first auxiliary electrode that is formed on the cathode bus line along an edge area of the cathode bus line, and a second auxiliary electrode that contacts the first auxiliary electrode. | 2014-11-27 |
20140346449 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode display includes a substrate, a planarization layer disposed on the substrate, a first electrode disposed on the planarization layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, wherein an uneven pattern is formed on a top surface of the planarization layer, the uneven pattern comprises a strip line having a plurality of thicknesses and widths, and a thickness of the strip line becomes smaller as a distance from a center portion of the first electrode becomes larger. | 2014-11-27 |
20140346450 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - A method of manufacturing an organic light-emitting diode display includes disposing a first electrode on a substrate on which a plurality of transistors is disposed, disposing a pixel definition layer on the substrate to cover a part of the first electrode, disposing a solvent layer on the first electrode, disposing an organic layer on the pixel definition layer and the solvent layer, removing the solvent layer and disposing a second electrode on the organic layer. | 2014-11-27 |
20140346451 | ADHESIVE FILM AND ORGANIC LIGHT EMITTING DISPLAY USING THE SAME - There is provided an adhesive film and an organic light emitting display using the same. The adhesive film includes a first protective layer, an adhesive layer and a second protective layer. The adhesive layer is formed on the first protective layer and has a pattern formed in one surface thereof, the pattern including one or more openings shaped and sized to accommodate particulate matter. The second protective layer is formed on the adhesive layer. | 2014-11-27 |
20140346452 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a substrate; an active layer disposed on the substrate; a gate electrode disposed so as to be insulated from the active layer and to correspond to a part of the active layer; a source electrode including a first source electrode layer connected to the active layer, and a second source electrode layer connected to the first source electrode layer and is larger than the first source electrode layer; a drain electrode including a first drain electrode layer connected to the active layer, and a second drain electrode layer connected to the first drain electrode layer and is larger than the first drain electrode layer; a pixel electrode electrically connected to at least one of the source electrode or the drain electrode; and a color filter disposed between the substrate and the pixel electrode. | 2014-11-27 |
20140346453 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic light emitting display device includes a first electrode on a substrate, an auxiliary electrode on the substrate, the auxiliary electrode being spaced apart from the first electrode, a protrusion on the auxiliary electrode, a pixel defining layer overlapping end portions of the first electrode and of the auxiliary electrode, the pixel defining layer separating the first electrode from the auxiliary electrode, an organic layer on the first electrode, and a second electrode on the organic layer, the protrusion electrically connecting the second electrode to the auxiliary electrode. | 2014-11-27 |
20140346454 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting display includes a substrate, a metal pattern on the substrate, the metal pattern directly contacting the substrate, and a thin film transistor including an active layer spaced apart from the metal pattern on the substrate, a gate electrode on the active layer, and a source electrode and a drain electrode on the gate electrode. | 2014-11-27 |
20140346455 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY - An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate, an organic light-emitting portion, a sealing member, and first and second connecting members. The organic light-emitting portion includes a first electrode positioned on the substrate, an organic light-emitting layer formed on the first electrode, and a second electrode formed on the organic light-emitting layer. The sealing member includes a first conductive layer positioned on the organic light-emitting portion and electrically connected to the second electrode, a second conductive layer electrically connected to the first electrode, and an insulating layer interposed between the first and second conductive layers. The first connecting member is connected to the first conductive layer to supply a first power source, and the second connecting member is connected to the second conductive layer to supply a second power source. | 2014-11-27 |
20140346456 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting diode includes a substrate, a first electrode, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode. The emission layer includes an anthracene-based compound represented by Formula 1, and an amine-based compound represented by Formula 20: | 2014-11-27 |
20140346457 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - Provided are an organic light-emitting display apparatus having superior light efficiency and ease of manufacture, as well as a method of manufacturing the same. The organic light-emitting display apparatus includes: a substrate; a pixel electrode disposed on a pixel region of the substrate; a first insulating layer that is interposed between the substrate and the pixel electrode and that has a first discontinuous region extending along at least a portion of an edge of the pixel electrode; an intermediate layer that is disposed on the pixel electrode and that includes an emission layer; and an opposite electrode that covers the intermediate layer and at least a portion of the first discontinuous region, so that a shortest distance to the substrate in at least a portion of the first discontinuous region is shorter than a shortest distance between the pixel electrode and the substrate. | 2014-11-27 |
20140346458 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR ARRAY SUBSTRATE - A thin-film transistor (“TFT”) array substrate includes: a TFT including an active layer, a gate electrode, a source electrode, a drain electrode, a first insulating layer disposed between the active layer and the gate electrode, and a second insulating layer disposed between the gate electrode, and the source and drain electrode; a pixel electrode including a transparent conductive oxide and disposed in an opening defined in the second insulating layer; a capacitor including a first electrode disposed on a layer on which the active layer is disposed, and a second electrode disposed on a layer on which the gate electrode is disposed; a pad electrode disposed on the second insulating layer and including a material substantially the same as a material in the source electrode and the drain electrode; a first protective layer disposed on the pad electrode; and a second protective layer disposed on the first protective layer. | 2014-11-27 |
20140346459 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus includes pixel electrodes formed on a substrate for respective pixels. Auxiliary electrodes are formed on at least parts of the periphery of the pixel electrodes. A first organic function layer is formed on the substrate and covers the pixel electrodes and the auxiliary electrodes. An emissive layer is formed on the first organic function layer for the respective pixels. A second organic function layer is formed on the substrate and covers the emissive layer. A cathode electrode is formed on the entire substrate and faces the pixel electrodes and covers the second organic function layer. Secondary cathode electrodes are formed, on at least parts of the auxiliary electrodes, in contact with the cathode electrode through a contact hole. | 2014-11-27 |
20140346460 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display device is disclosed. The device includes, for example, a thin film transistor with an active layer on a substrate, a gate electrode, a source electrode, and a drain electrode, a pixel electrode formed on the same layer as the gate electrode, an electrode pattern partially exposing the pixel electrode and formed on the pixel electrode, a pixel electrode contact formed between the electrode pattern and the drain electrode and electrically connected to the drain electrode, a pixel defining film exposing the pixel electrode and formed to cover the drain electrode and the source electrode, an intermediate layer formed on the exposed pixel electrode and comprising an emissive layer, and an opposite electrode formed opposite the pixel electrode to at least partially cover the intermediate layer. A method of manufacturing the device is also disclosed. | 2014-11-27 |
20140346461 | THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THIN-FILM TRANSISTOR SUBSTRATE - A thin film transistor (TFT) substrate, an organic light-emitting display apparatus including the TFT substrate, and a method of manufacturing the TFT substrate that enable simple manufacturing processes and a decrease in the interference between a capacitor and other interconnections are disclosed. The TFT substrate may include a substrate, a TFT arranged on the substrate, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a pixel electrode electrically connected to one of the source electrode and the drain electrode, and a capacitor including a lower capacitor electrode and an upper capacitor electrode, the lower capacitor electrode formed from the same material as the active layer and arranged on the same layer as the active layer, and the upper capacitor electrode formed from the same material as the pixel electrode. | 2014-11-27 |
20140346462 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting diode, comprising a substrate; a first electrode on the substrate; a second electrode disposed opposite to the first electrode; and an emission layer between the first electrode and the second electrode, the emission layer including an anthracene-based compound represented by Formula 1, below, and a condensed cyclic compound represented by Formula 20, below: | 2014-11-27 |
20140346463 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting diode including a substrate; a first electrode on the substrate; a second electrode disposed opposite to the first electrode; and an emission layer between the first electrode and the second electrode, the emission layer including an anthracene-based compound represented by Formula 1, below, and a condensed cyclic compound represented by Formula 20, below: | 2014-11-27 |
20140346464 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting diode including a substrate; a first electrode on the substrate; a second electrode facing the first electrode; and an emission layer between the first electrode and the second electrode, the emission layer including an anthracene-based compound represented by Formula 1, below, and a condensed ring compound represented by Formula 20, below: | 2014-11-27 |
20140346465 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus including a thin film transistor including a gate electrode, an active layer insulated from the gate electrode, a source electrode and a drain electrode insulated from the gate electrode and contacting the active layer, and an insulating layer disposed between the source and drain electrodes and the active layer. The organic light-emitting display apparatus further includes an organic light-emitting diode including a first electrode, a second electrode and an organic layer disposed between the first electrode and the second electrode. The organic light-emitting diode is electrically connected to the thin film transistor. The drain electrode overlaps with a ortion of the organic light-emitting diode. | 2014-11-27 |
20140346466 | ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR - An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a compound represented by Chemical Formula 1 or Chemical Formula 2, and a compound represented by Chemical Formula 3. | 2014-11-27 |
20140346467 | DEPOSITION SUBSTRATE TRANSFERRING UNIT, ORGANIC LAYER DEPOSITION APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A deposition substrate transferring unit that can deposit a deposition material at an exact location on a substrate, includes an electrostatic chuck that has a first surface to which a substrate is attached; and a carrier having a surface that combines with a second surface of the electrostatic chuck to move the electrostatic chuck in a first direction. The carrier includes accommodation parts disposed in empty space within the carrier, and supplementary ribs respectively formed on surfaces of the accommodation parts. | 2014-11-27 |
20140346468 | ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING A CHANNEL IN PIXEL DEFINING LAYER - A display device with channels formed in the pixel defining layer is presented. The display device includes a substrate, a pixel defining layer disposed on the substrate to define pixel areas, and channels extending between different pixel areas to allow deposited material to move/flow from one area to another and achieve a substantially even distribution. The pixel area includes a first electrode, an emission layer on the first electrodes, and a second electrode on the emission layer. A method for making such display device is also presented. | 2014-11-27 |
20140346469 | OPTICAL FILMS FOR REDUCING COLOR SHIFT AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUSES EMPLOYING THE SAME - Optical films for reducing color shift, and organic light-emitting display apparatuses, employing the same include a first lens pattern layer including a plurality of first grooves, and a second lens pattern layer on the first lens pattern layer having the plurality of first grooves. The second lens pattern layer has a plurality of second grooves crossing the plurality of first grooves. The plurality of first and second grooves are each shaped in the form of a stripe. | 2014-11-27 |
20140346470 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is an organic light emitting display device. The device includes an organic electroluminescence element in which a pixel electrode, an intermediate layer including a light emitting layer, and a cathode electrode are successively stacked, a cathode contact including an upper electrode contacting the cathode electrode and a lower electrode disposed on the same layer as the pixel electrode to contact the upper electrode, and a line disposed on the same layer as the lower electrode. At least three cathode contacts are disposed in a direction crossing the line, and the line is disposed between the cathode contacts. | 2014-11-27 |
20140346471 | STRUCTURE AND METHOD FOR PACKAGING ORGANIC PHOTOELECTRIC DEVICE - A method for packaging an organic photoelectric device is disclosed. In the method, an inorganic substrate is provided, an organic layer is coated or pasted on the inorganic substrate to form a hybrid substrate. An organic photoelectric device is formed on the hybrid substrate, and the organic layer and the organic photoelectric device are patterned to define a package region. A permeation barrier layer is disposed on the package region to cover the organic photoelectric device. | 2014-11-27 |
20140346472 | METHOD FOR MANUFACTURING AN ORGANIC LIGHT EMITTING DISPLAY PANEL AND RELATED ORGANIC LIGHT EMITTING DISPLAY PANEL - A method for manufacturing an organic light emitting display panel is disclosed. The organic light emitting display panel includes a substrate. The method includes forming a plurality of bank arrays, each of which has a plurality of banks, utilizing a plurality of ink-jet heads, each of which has a plurality of nozzles arranged alternately, to move relative to the substrate along a moving direction perpendicular to a border of the substrate, and utilizing at least one of the plurality of nozzles to drop organic light emitting ink for forming at least one organic light emitting pixel in at least one bank. An oblique angle is formed between an arrangement direction of the plurality of banks and the border of the substrate. Each ink-jet head forms the oblique angle cooperatively with the border of the substrate. | 2014-11-27 |
20140346473 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS HAVING A FLEXIBLE SUBSTRATE - An organic light-emitting display apparatus includes a flexible substrate. The organic light-emitting display apparatus includes a first plastic layer. A first barrier layer is formed on the first plastic layer. A second plastic layer is formed on the first barrier layer. An organic light-emitting device layer is formed on the second plastic layer. A thin film encapsulating layer encapsulates the organic light-emitting device layer. The first barrier layer is patterned to correspond to an area where the organic light-emitting device layer is formed. | 2014-11-27 |
20140346474 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - Disclosed is an organic light emitting diode display including an organic light emitting display panel configured to display an image, and a lower passivation film attached to a bottom of the organic light emitting diode display panel. The lower passivation film includes a support film that is in contact with the organic light emitting diode display panel, and a stress adjustment layer formed beneath the support film and configured to reduce a bending stress to be induced in the organic light emitting display panel when the organic light emitting display panel and the lower passivation film are bent. | 2014-11-27 |
20140346475 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF REPAIRING THE SAME - Provided is an organic light-emitting display apparatus and a method of repairing the same. The organic light-emitting display apparatus includes: an emission device comprising a plurality of sub-emission devices; an emission pixel circuit configured to supply a driving current to the emission device; a dummy pixel circuit configured to supply the driving current to the emission device; and a repair line coupling the emission device to the dummy pixel circuit, wherein the emission device is configured to receive the driving current from the emission pixel circuit or the dummy pixel circuit. | 2014-11-27 |
20140346476 | OLED DISPLAY PANEL AND THE PACKAGING METHOD THEREOF, DISPLAY DEVICE - An OLED display panel comprises an OLED substrate, an encapsulation cover plate arranged opposite to the OLED substrate, and an adhesive film provided between the OLED substrate and the encapsulation cover plate, and further comprises a moistureproof material capable of absorbing moisture; the moistureproof material is provided in the adhesive film. The embodiments of the present invention eliminate the volume increase of the OLED display panel. A method for packaging the OLED display panel and a display device comprising the OLED display panel are also provided. | 2014-11-27 |
20140346477 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a first substrate, an organic light emitting diode array, a thin film encapsulation layer, a second substrate, a sealant member and a buffer layer. First substrate has a light emitting region and a non-light emitting region. OLED array is configured in light emitting region covered by encapsulation layer. Second substrate has a color filter array and is arranged opposite first substrate. Sealant member is disposed between first and second substrates. Buffer layer has a first light shielding layer disposed thereon, is arranged between first and second substrates, and is configured in light emitting region. Light shielding layer is arranged between buffer layer and encapsulation layer. The sum of the buffer layer's thickness and a gap distance from buffer layer to encapsulation layer has a range from 5 to 20 μm. Buffer layer has hardness smaller than that of the color filter array. | 2014-11-27 |
20140346478 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a first transistor on a substrate, a first electrode connected to the first transistor, and a pixel definition layer on the first electrode. The pixel definition layer has an opening exposing the first electrode. A spacer is formed at the opening. An organic emission layer is on the exposed first electrode, and a second electrode on the organic emission layer. | 2014-11-27 |
20140346479 | Organic Devices, Organic Electroluminescent Devices and Organic Solar Cells - An organic device, including an organic compound having charge-transporting ability (i.e., transporting holes and/or electrons) and/or including organic light emissive molecules capable of emitting at least one of fluorescent light or phosphorescent light, has a charge transfer complex-contained layer including a charge transfer complex formed upon contact of an organic hole-transporting compound and molybdenum trioxide via a manner of lamination or mixing thereof, so that the organic hole-transporting compound is in a state of radical cation (i.e., positively charged species) in the charge transfer complex-contained layer. | 2014-11-27 |
20140346480 | LIGHT EMITTING ELEMENT, DISPLAY APPARATUS, AND LIGHTING APPARATUS - A light emitting element includes a first electrode, a second electrode, and an organic layer in which a first luminescent layer and a second luminescent layer are provided from a first electrode side, the organic layer being provided between the first electrode and the second electrode, light from the organic layer being reflected on an interface of the luminescent layer and the first electrode, passing through the second electrode, and being emitted to outside, a first optical transparent layer, a second optical transparent layer, and a third optical transparent layer being provided, from a second luminescent layer side, on a side of the second luminescent layer, the side being opposite to the first luminescent layer. | 2014-11-27 |
20140346481 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line. | 2014-11-27 |
20140346482 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME - An aromatic amine derivative is represented by the following formula (1). In the formula (1), R | 2014-11-27 |
20140346483 | COMPOUND FOR AN ORGANIC OPTOELECTRONIC ELEMENT, ORGANIC LIGHT-EMITTING ELEMENT COMPRISING SAME, AND DISPLAY DEVICE COMPRISING THE ORGANIC LIGHT-EMITTING ELEMENT - Disclosed are a compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode. The compound for an organic optoelectronic device represented by a combination of the following Chemical Formula 1; and Chemical Formula 2 or 3 provides an organic light emitting diode having life-span characteristics due to excellent electrochemical and thermal stability, and high luminous efficiency at a low driving voltage. | 2014-11-27 |
20140346484 | ORGANIC ELECTROLUMINESCENCE DISPLAY PANEL AND METHOD OF MANUFACTURING SAME - A organic EL display panel includes an inter-layer insulation film, a pixel electrode, auxiliary wiring, a partition layer, an organic light-emitting layer, and a common electrode. The inter-layer insulation film has at least one paired concave portion and non-concave portion disposed in a region over the auxiliary wiring, a top face of the concave portion being concave with respect to a top face of the non-concave portion, and the auxiliary wiring includes a part over the concave portion and a part over the non-concave portion, a top face of the part over the concave portion being concave with respect to a top face of the part over the non-concave portion. | 2014-11-27 |
20140346485 | DISPLAY AND ELECTRONIC APPARATUS - Provided is a display ( | 2014-11-27 |
20140346486 | LIGHT EMITTING COMPOSITION AND DEVICE - A light-emitting composition comprises a polymer and a phosphorescent light-emitting material. The polymer comprises conjugating repeat units of formula (I) and up to 20 mol % of conjugation-blocking repeat units of repeat units of formula (II): | 2014-11-27 |
20140346487 | DISPLAY DEVICE HAVING SHARED COLUMN LINES - A display device having at least a plurality of pixel circuits, connected to signal lines to which data signals in accordance with luminance information are supplied, arranged in a matrix, wherein pixel circuits of odd number columns and even number columns adjacent sandwiching an axis in a column direction parallel to an arrangement direction of the signal lines have a mirror type circuit arrangement symmetric about the axis of the column direction, and there are lines different from the signal lines between signal lines of adjacent pixel circuits. | 2014-11-27 |
20140346488 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs. | 2014-11-27 |
20140346489 | LUMINESCENT DEVICE AND PROCESS OF MANUFACTURING THE SAME - In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used. | 2014-11-27 |
20140346490 | DISPLAY UNIT - A display unit with which lowering of long-term reliability of a transistor is decreased is provided. The display unit includes a display section having a plurality of organic EL devices with light emitting color different from each other and a plurality of pixel circuits that are singly provided for every said organic EL device for every pixel. The pixel circuit has a first transistor for writing a video signal, a second transistor for driving the organic EL device based on the video signal written by the first transistor, and a retentive capacity, and out of the first transistor and the second transistor, a third transistor provided correspondingly to a second organic EL device adjacent to a first organic EL device is arranged farther from the first organic EL device than a first retentive capacity provided correspondingly to the second organic EL device out of the retentive capacity. | 2014-11-27 |
20140346491 | Light-Emitting Module, Light-Emitting Device, Method of Manufacturing the Light-Emitting Module, and Method of Manufacturing the Light-Emitting Device - A highly reliable light-emitting module including an organic EL element or a light-emitting device using a highly reliable light-emitting module including an organic EL element is provided. Alternatively, a method of manufacturing a highly reliable light-emitting module including an organic EL element, or a method of manufacturing a light-emitting device using a highly reliable light-emitting module including an organic EL element is provided. The light-emitting module has a structure in which a light-emitting element formed over a first substrate and a viscous material layer are sealed in a space between the first substrate and a second substrate which face each other, with a sealing material surrounding the light-emitting element. The viscous material layer is provided between the light-emitting element and the second substrate and includes a non-solid material and a drying agent which reacts with or adsorbs an impurity. | 2014-11-27 |
20140346492 | Light Emitting Device and Manufacturing Method of the Same - The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material | 2014-11-27 |
20140346493 | IN-CELL OLED TOUCH DISPLAY PANEL STRUCTURE - An in-cell OLED touch display panel structure includes an upper substrate, a lower substrate, an OLED layer configured between the upper and lower substrates, and a black matrix layer. The black matrix layer is disposed at one surface of the upper substrate that faces the OLED layer, and the black matrix layer is composed of a plurality of opaque conductor lines. The plurality of opaque conductor lines is divided into a first group of opaque conductor lines, a second group of opaque conductor lines, and a third group of opaque conductor lines. The second group of opaque conductor lines is formed with N mesh-like polygonal regions. The opaque conductor lines in any one of the polygonal regions are electrically connected together, while any two polygonal regions are not connected, so as to form a single-layered touch sensing pattern on the black matrix layer. | 2014-11-27 |
20140346494 | OPTICAL UNIT AND ORGANIC LIGHT EMITTING DIODE DISPLAY HAVING THE SAME - An optical unit on a light emitting unit includes a first polarizing plate on the light emitting unit, a second polarizing plate on the first polarizing plate, the second polarizing plate having a higher polarization degree than the first polarizing plate, and a plurality of phase shift plates between the first polarizing plate and the second polarizing plate. | 2014-11-27 |
20140346495 | STABLE HIGH MOBILITY MOTFT AND FABRICATION AT LOW TEMPERATURE - A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm | 2014-11-27 |
20140346496 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a thin film transistor on a substrate, a color pattern on the substrate, a light blocking pattern on the thin film transistor, an organic insulation layer covering the color pattern and the light blocking pattern, a pixel electrode on the organic insulation layer, and a low-reflective pattern on the pixel electrode. An opening portion is defined in the light blocking pattern and exposes the thin film transistor. A contact hole is defined in the organic insulation layer and corresponding to the opening portion. The pixel electrode is electrically connected to the thin film transistor through the contact hole. The low-reflective pattern corresponds to the opening portion. | 2014-11-27 |
20140346497 | THIN-FILM TRANSITOR AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film. | 2014-11-27 |
20140346498 | THIN FILM TRANSISTOR, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide. | 2014-11-27 |
20140346499 | THIN-FILM TRANSISTOR, DISPLAY UNIT, AND ELECTRONIC APPARATUS - Provided is a thin-film transistor that includes: a substrate; a first barrier film formed on the substrate; a second barrier film formed in a selective region on the first barrier film, and having a barrier property against hydrogen; an oxide semiconductor layer including a first part formed on the second barrier film and a second part formed on the first barrier film, in which the first part functions as an active layer, and the second part has lower electrical resistance than the first part; a gate electrode formed on the first part of the oxide semiconductor layer with a gate insulating film therebetween; and a source electrode or drain electrode electrically connected to the second part of the oxide semiconductor layer. The first barrier film has a barrier property against an impurity from the substrate and a property of chemically reducing the oxide semiconductor layer. | 2014-11-27 |
20140346500 | OXIDE SEMICONDUCTOR FILM AND FORMATION METHOD THEREOF - To provide a crystalline oxide semiconductor film. By collision of ions with a target including a crystalline In—Ga—Zn oxide, a flat-plate-like In—Ga—Zn oxide is separated. In the flat-plate-like In—Ga—Zn oxide, a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including a zinc atom and an oxygen atom, a third layer including an indium atom and an oxygen atom, and a fourth layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order. After the flat-plate-like In—Ga—Zn oxide is deposited over a substrate while maintaining the crystallinity, the second layer is gasified and exhausted. | 2014-11-27 |
20140346501 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region. | 2014-11-27 |
20140346502 | SEMICONDUCTOR DEVICE - A semiconductor device ( | 2014-11-27 |
20140346503 | MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE - The present invention provides a thin film or laminate which ensures switching capabilities by phase transition of Mott transition at room temperature. An embodiment of the present invention provides a manganese oxide thin film | 2014-11-27 |
20140346504 | ACTIVE MATRIX SUBSTRATE - This active-matrix substrate ( | 2014-11-27 |
20140346505 | MEMORY DEVICE AND MANUFACTURING METHOD THE SAME - A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element. | 2014-11-27 |
20140346506 | ELECTRONIC DEVICE, DISPLAY DEVICE, AND SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A pixel having a transistor which controls a current value supplied to a load, a first storage capacitor, a second storage capacitor, and first to fourth switches is included. After the threshold voltage of the transistor is held in the second storage capacitor, a potential in accordance with a video signal is input to the pixel. Voltage obtained by adding a potential in which the potential in accordance with the video signal and the first storage capacitor are capacitively divided to the threshold voltage is held in the second storage capacitor in this manner, so that variation of a current value caused by variations in the threshold voltage of the transistor is suppressed. Thus, desired current can be supplied to the load such as a light-emitting element. In addition, a display device with little deviation from luminance specified by the video signal can be provided. | 2014-11-27 |
20140346507 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a transistor in which the state of an interface between an oxide semiconductor layer and an insulating film (gate insulating layer) in contact with the oxide semiconductor layer is favorable; and a method for manufacturing the transistor. In order to obtain the transistor, nitrogen is added to a region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer. Specifically, a concentration gradient of nitrogen is formed in the oxide semiconductor layer, and a region containing much nitrogen is provided at the interface with the gate insulating layer. By the addition of nitrogen, a region with high crystallinity can be formed in the region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer, so that a stable interface state can be obtained. | 2014-11-27 |
20140346508 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films. | 2014-11-27 |
20140346509 | Semiconductor Component with Integrated Crack Sensor and Method for Detecting a Crack in a Semiconductor Component - A first embodiment relates to a semiconductor component. The semiconductor component has a semiconductor body with a bottom side and a top side spaced distant from the bottom side in a vertical direction. In the vertical direction, the semiconductor body has a certain thickness. The semiconductor component further has a crack sensor configured to detect a crack in the semiconductor body. The crack sensor extends into the semiconductor body. A distance between the crack sensor and the bottom side is less than the thickness of the semiconductor body. | 2014-11-27 |
20140346510 | DEVICE STRUCTURE SUITABLE FOR PARALLEL TEST - A device structure suitable for parallel test is disclosed, which includes a main body and an anti-crosstalk structure. The main body includes a first well formed in a substrate, the first well defining a boundary of the main body in the substrate. The anti-crosstalk structure is a second well formed in the substrate and surrounding the first well of the main body. The second well has a conductivity type opposite to a conductivity type of the first well and has a depth greater than a depth of the first well. The present invention is capable of preventing the interference between leakage currents generated in bases of the same conductivity type of different such device structures during a parallel test, thereby allowing the leakage currents to be correctly measured and improving the reliability of measurement result and the test efficiency. | 2014-11-27 |
20140346511 | ARRAY SUBSTRATE, MANUFACTURING METHOD, AND DISPLAY DEVICE THEREOF - An array substrate, a manufacturing method, and a display device thereof are disclosed. The array substrate comprises a plurality of pixel units, each of the pixel units comprises a first transparent conductive layer and a second transparent conductive layer ( | 2014-11-27 |
20140346512 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In a semiconductor integrated circuit device, a target chip, a test chip, and an electronic device are incorporated in a package. A signal terminal of the target chip is a target terminal and to be subjected to a test. The test chip has a test mechanism for allowing the test to be performed through an external terminal exposed outside the package. In a product operation mode where the semiconductor integrated circuit device operates as a product, the electronic device is connected to the target terminal. The test chip includes a common wire connected to the test terminal, a first terminal connected to the target terminal, a first switch for opening and closing a connection between the common wire and the first terminal, a second terminal connected to the electronic device, and a second switch for opening and closing a connection between the first terminal and the second terminal. | 2014-11-27 |
20140346513 | Mixed-Sized Pillars That Are Probeable and Routable - An integrated circuit with probeable and routable interfaces is disclosed. The integrated circuit includes multiple micro-pillars that are attached to the surface of the integrated circuit, and multiple macro-pillars also attached to the surface of the integrated circuit. The micro-pillars provide an electrical interface to the integrated circuit during regular operation. The macro-pillars provide an electrical interface to the integrated circuit both during regular operation and during testing of the integrated circuit. | 2014-11-27 |
20140346514 | SEMICONDUCTOR DEVICE - A semiconductor device comprises: a semiconductor element including an electrode; a leading line electrically connected to the electrode, passing above the electrode, and led to a side thereof; and a current sensor sensing current flowing through the leading line. The current sensor includes a magneto-resistance element placed above the electrode and below the leading line. A resistance value of the magneto-resistance element varies linearly according to magnetic field generated by the current. | 2014-11-27 |
20140346515 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Detection accuracy of a semiconductor device for detecting various kinds of substances including biological matter such as DNA is to be increased. This semiconductor device includes: a channel region CH placed on a first surface of a silicon oxide film | 2014-11-27 |
20140346516 | SEMICONDUCTOR MEMORY DEVICES AND SEMICONDUCTOR PACKAGES - A semiconductor memory device includes a semiconductor die and an input-output bump pad part. The semiconductor die includes a plurality of memory cell arrays. The input-output bump pad part is formed in a central region of the semiconductor die. The input-output bump pad part provides a plurality of channels for connecting each of the memory cell arrays independently to an external device. The semiconductor memory device may adopt the multi-channel interface, thereby having high performance with relatively low power consumption. | 2014-11-27 |
20140346517 | PHOTO DETECTOR AND METHOD FOR FABRICATING THE SAME - A photo detector and a method for fabricating the same are provided. The photo detector includes a first substrate and a photo conversion element. The first substrate has a sensor element array for receiving a light with a spectrum in a specific wavelength range. The photo conversion element is disposed on the sensor element array, where the photo conversion element includes a photo conversion material layer and a doped photo conversion material column structure layer. A luminescent spectrum of the doped photo conversion material layer column structure layer is overlapped with the spectrum in a specific wavelength range, and a luminescent spectrum of the photo conversion material layer is non-overlapped with the spectrum in a specific wavelength range. | 2014-11-27 |
20140346518 | MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING LAYER WITH PERPENDICULAR MAGNETIC ANISOTROPY FILM - A magnetic memory includes a magnetic memory, including a ferromagnetic underlayer including a magnetic material, a non-magnetic intermediate layer disposed on the underlayer, a ferromagnetic data recording layer formed on the intermediate layer and having a perpendicular magnetic anisotropy, a reference layer connected to the data recording layer across a non-magnetic layer, and first and second magnetization fixed layers disposed in contact with a bottom face of the underlayer. The data recording layer includes a magnetization free region having a reversible magnetization and opposed to the reference layer, a first magnetization fixed region coupled to a first border of the magnetization free layer and having a magnetization fixed in a first direction, and a second magnetization fixed region coupled to a second border of the magnetization free layer and having a magnetization fixed in a second direction opposite to the first direction. | 2014-11-27 |
20140346519 | Active Array Substrate and Manufacturing Method Thereof - An active array substrate includes a flexible substrate, an inorganic barrier layer, and at least one active component. The inorganic barrier layer covers the flexible substrate. The inorganic barrier layer has a through hole therein. The through hole of the inorganic barrier layer exposes the flexible substrate. The active component is disposed on the inorganic barrier layer. | 2014-11-27 |
20140346520 | GATE DRIVER AND DISPLAY APPARATUS HAVING THE SAME - A driver includes a dummy stage and one or more additional stages coupled to the dummy stage. The dummy stage includes a first transistor coupled between an input terminal and an output terminal. The first transistor includes two electrodes forming at least a first capacitor to store at least a portion of static electricity received through the input terminal. The one or more additional stages output gate signals, which may be received, for example, by a display device. | 2014-11-27 |
20140346521 | DISPLAY DEVICE AND ELECTRONIC DEVICE - A display device includes a circuit layer including: a plurality of transistors; a plurality of metal layers; and a plurality of wirings. The display device includes a display layer including first, second and third light emitting elements. The first light emitting element includes a first anode electrode and a first light emitting layer, a surface of the first anode electrode having a first surface contour structure; the second light emitting element includes a second anode electrode and a second light emitting layer, a surface of the second anode electrode having a second surface contour structure which is different from the first surface contour structure; and the third light emitting element includes a third anode electrode and a third light emitting layer, a surface of the third anode electrode having a third surface contour structure which is different from the second surface contour structure. | 2014-11-27 |
20140346522 | METHOD AND SYSTEM FOR CO-PACKAGING VERTICAL GALLIUM NITRIDE POWER DEVICES - An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to the leadframe and the drain of the second GaN transistor is electrically connected to the leadframe. The electronic package further includes a first GaN diode comprising an anode and cathode and a second GaN diode comprising an anode and cathode. The anode of the first GaN diode is electrically connected to the leadframe and the cathode of the second GaN diode is electrically connected to the leadframe. | 2014-11-27 |
20140346523 | Enhanced GaN Transistor and the Forming Method Thereof - An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure. | 2014-11-27 |
20140346524 | GALLIUM AND NITROGEN CONTAINING TRILATERAL CONFIGURATION FOR OPTICAL DEVICES - Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described. | 2014-11-27 |
20140346525 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate; a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer; a gate trench formed in the second semiconductor layer or in the second and first semiconductor layers; a gate electrode formed at the gate trench; and a source electrode and a drain electrode formed on the second semiconductor layer. The gate trench has terminal parts of a bottom of the gate trench formed shallower than a center part of the bottom. A part of a sidewall of the gate trench is formed of a surface including an a-plain surface. The center part of the bottom is a c-plain surface. The terminal parts of the bottom form a slope from the c-plain surface to the a-plain surface. | 2014-11-27 |
20140346526 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate; a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer; an insulating layer formed on the second semiconductor layer; a source electrode and a drain electrode formed on the second semiconductor layer; and a gate electrode formed on the insulating layer. The insulating layer is formed of a material including an oxide and is formed by laminating a first insulating layer and a second insulating layer in a positioning order of the first insulating layer followed by the second insulating layer from a side of the second semiconductor layer, and an amount of hydroxyl groups included in per unit volume of the first insulating layer is less than an amount of hydroxyl groups included in per unit volume of the second insulating layer. | 2014-11-27 |
20140346527 | Method of fabricating a gallium nitride p-i-n diode using implantation - A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region | 2014-11-27 |
20140346528 | VERTICAL-CHANNEL TYPE JUNCTION SIC POWER FET AND METHOD OF MANUFACTURING SAME - In order to secure the performance of a SiC-based JFET having an impurity diffusion rate lower than silicon-based one, a gate depth is secured while precisely controlling a distance between gate regions, instead of forming gate regions by ion implantation into the side wall of a trench. This means that a channel region defined by a gate distance and a gate depth should have a high aspect ratio. Further, due to limitations of process, a gate region is formed within a source region. Formation of a highly doped PN junction between source and gate regions causes various problems such as inevitable increase in junction current. In addition, a markedly high energy ion implantation becomes necessary for the formation of a termination structure. In the invention, provided is a vertical channel type SiC power JFET having a floating gate region below and separated from a source region and between gate regions. | 2014-11-27 |