47th week of 2010 patent applcation highlights part 14 |
Patent application number | Title | Published |
20100294994 | PROCESS FOR THE PRODUCTION OF SYNTHESIS GAS AND HYDROGEN STARTING FROM LIQUID OR GASEOUS HYDROCARBONS - A process is described for producing synthesis gas and hydrogen starting from liquid hydrocarbon feedstocks, possibly also mixed with gaseous hydrocarbon streams, comprising at least the following operations: 1) nebulizing/vaporizing a stream of a liquid hydrocarbon feedstock consisting of one or more of the following hydrocarbons: naphthas, various kinds of gas oils, such as LCO, HCO and VGO, other products of refining cycles and oil up-grading, such as DAO, other heavy residues, at a N temperature ranging from 50 to 500° C. and a pressure of 2 to 50 atm, the nebulization also being effected with the help of a gaseous propellant, possibly with the addition of CO | 2010-11-25 |
20100294995 | REFLECTOR GRAPHITE CONSISTING OF ISOTROPIC HIGHLY CRYSTALLINE NATURAL GRAPHITE AS THE MAIN COMPONENT AND SILICON OR ZIRCONIUM CARBIDE, AND PRODUCTION THEREOF - Disclosed is reflector graphic which is characterized in that the main component of the graphite is nuclear-purity natural graphite in addition to silicon carbide and/or zirconium carbide, the pressed pieces are shaped by a combined cold-hot pressing process, and the thermal treatment of the pressed pieces is limited to temperatures of less than 2000° C. | 2010-11-25 |
20100294996 | MATERIAL FOR THE FORMATION OF STRUCTURES HAVING A SUPPORT FUNCTION - The invention describes a material for the formation of structures consisting of a polymer or a polymer mixture and an initiator, wherein the polymer or polymer mixture can be transformed from a liquid or viscous state to a solid state by the initiator, and the use of said material as well as a method for the production of structures using said material. | 2010-11-25 |
20100294997 | METHOD FOR PRODUCING CONDUCTIVE POLYMER SOLUTION - There is provided a method for producing a conductive polymer solution comprising: a freeze-drying step in which an aqueous conductive polymer solution containing a complex that includes a π-conjugated conductive polymer and a polyanion is freeze dried to thereby obtain a solid complex; and a dispersion step in which an organic solvent having a water content of 4% by mass or less and an amine compound are mixed to the solid complex, followed by a dispersion treatment. | 2010-11-25 |
20100294998 | AROMATIC IMIDE-BASED DISPERSANT FOR CARBON NANOTUBES AND CARBON NANOTUBE COMPOSITION COMPRISING THE SAME - Disclosed herein are an aromatic imide-based dispersant for CNTs and a carbon nanotube composition comprising the same. Having an aromatic ring structure advantageously realizing adsorption on carbon nanotubes, the dispersant, even if used in a small amount, can disperse a large quantity of carbon nanotubes. | 2010-11-25 |
20100294999 | PRODUCING METHOD AND APPARATUS OF SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL INGOT - The sublimation speed of dopant can be precisely controlled without being influenced by a change over time of intra-furnace thermal environment. A dopant supply unit equipped with an accommodation chamber and a supply tube is provided. A sublimable dopant is accommodated. Upon sublimation of the dopant within the accommodation chamber, the sublimed dopant is introduced into a melt. The dopant within the accommodation chamber of the dopant supply unit is heated. The amount of heating by means of heating means is controlled so as to sublime the dopant at a desired sublimation speed. The dopant is supplied to the melt so that the dopant concentration until the first half of a straight body portion of the silicon single crystal is in the state of low concentration or non-addition. After the first half of the straight body portion of the silicon single crystal is formed, the dopant is supplied to the melt so that every portion of the crystal is in the state where the dopant is added to a desired high concentration. | 2010-11-25 |
20100295000 | NANO-OXIDE PARTICLES AND PRODUCTION PROCESS THEREOF - Nano-oxide particles are surface-protected with a polyvinyl monomolecular film having a binding functional group. The surface-protected nano-oxide particles are produced through vinyl polymerization of a vinyl monomer having a binding functional group in a solution containing nano-oxide particles, the vinyl monomer having the binding functional group, and a dispersion medium. The dispersion medium is contained in the solution in an amount of 70 wt. % or more. | 2010-11-25 |
20100295001 | HIGH-EFFICIENCY LIGHT DIFFUSING POLYMERIC FILM AND MANUFACTURING METHOD THEREOF - A high-efficiency light diffusing polymeric film comprises a first polymer which is a light transmissible medium, and a second polymer which forms light scattering particles, wherein the polymers are immiscible and have a refractive index difference of about 0.001 to about 0.5, and the polymeric film comprises about 30 about to 70 parts by weight of the second polymer with respect to 100 parts by weight of the first polymer. A method for manufacturing a high-efficiency polymeric film is carried out such that a first polymer forms a continuous phase and a second polymer forms a dispersed phase through coating or extrusion. | 2010-11-25 |
20100295002 | Color composition for color filter, color filter using the composition and liquid crystal display device - Disclosed is a color composition for a color filter, which includes at least acrylic resin and a coloring agent. The acrylic resin contains a copolymer formed of a first vinyl monomer having a benzyl group and a second vinyl monomer having a carboxyl group, the copolymer having a weight average molecular weight of 3,000 to 11,000, and an acid value of solid matter of the copolymer being confined to 30 to 85. | 2010-11-25 |
20100295003 | PHOTOCHROMIC COMPOSITIONS AND PHOTOCHROMIC FILMS - The present invention relates to a photochromic composition comprising multifunctional (meth)acrylate-based monomers having two or more functional groups, a photochromic dye and an aromatic vinyl compound, in which the content of the aromatic vinyl compound is more than 30% by weight and 70% by weight or less, a photochromic film produced by using the same, and a method for producing the photochromic film. | 2010-11-25 |
20100295004 | TENSIONING APPARATUS - A tensioning apparatus includes a first shaft and a strap wound on the first shaft such that the strap has first and second portions extending in opposite directions, and the first portion of the strap is collected on the first shaft by operably moving the rotating shaft. The tensioning apparatus further includes a reeling device for collecting the second portion of the strap. Furthermore, the reeling device includes a ratcheting mechanism that facilitates collection of the strap. | 2010-11-25 |
20100295005 | Hoist device - A hoist device adaptable to lift or pull load material of various types. The hoist device is attachable to the trailer hitch of a vehicle and comprises a telescopic boom of a pair of rectangular tubular members attachable slidably to a base support member. In adjacent position on the base support is a control post member to which other components are attached, including a motor-driven winch positionable on the upright end thereof. A lifting component is attachable to the end of the boom member to be able to rotate easily, in any direction, since the angular movement of the boom member is always only one direction in regard to the axis of the boom member. A cable is used to operate the movement of the boom member, and has one end attached to the winch and a second end attached to a rigid component on the boom member after engaging pulley means on the boom member or control post member as chosen to provide suitable angular orientation of the boom member and telescopic extension of the boom member. | 2010-11-25 |
20100295006 | GUIDING DEVICE OF HAULING ROPE FOR TOOLS IN BOREHOLE - The present invention relates to a guiding device of a hauling rope, in more detail, a guiding device of a hauling rope that installed at the top of casing, which controls inserting/withdrawing a hauling rope connected with a Sonde, measuring instrument, which probes, observes, and examines an underground structure, geological features, or soil conditions etc. within borehole. | 2010-11-25 |
20100295007 | SAFETY BARRIERS - The present invention relates to safety barriers, and in particular, for use around the perimeter of building floors during construction of a building. In one form, the present invention provides a safety barrier module for use in erecting a fenced-off zone around the perimeter of a building floor during construction of a building, the safety barrier module including: a barrier panel for inhibiting the passage of workers or objects from the building floor to the ground below; and at least one counterweighted footing block for receiving a support post connected to the barrier panel, the footing block arranged to rest on the building floor and to counteract loads and forces on the barrier panel to support the barrier panel in a substantially upright position relative to the building floor; wherein the barrier panel is geometrically shaped to extend from a predetermined height down to substantially the building floor level. | 2010-11-25 |
20100295008 | BALUSTRADES - A connector for connecting a wire to a balustrade rail, the connector comprising: a tubular body for receipt therein of a wire end portion and for positioning in the rail through a rail aperture; an opening in the tubular body for the wire to extend from the connector when the wire end portion is located in the tubular body; and a deflector for deflecting the wire at an angle to the wire end portion which is held in the tubular body, when the wire is under tension. | 2010-11-25 |
20100295009 | Phase Change Memory Cells Having Vertical Channel Access Transistor and Memory Plane - Memory devices are described along with methods for manufacturing. A memory device as described herein comprises a plurality of word lines overlying a plurality of bit lines, and a plurality of field effect transistors. Field effect transistors in the plurality of field effect transistors comprises a first terminal electrically coupled to a corresponding bit line in the plurality of bit lines, a second terminal overlying the first terminal, and a channel region separating the first and second terminals and adjacent a corresponding word line in the plurality of word lines. The corresponding word line acts as the gate of the field effect transistor. A dielectric separates the corresponding word line from the channel region. A memory plane comprises programmable resistance memory material electrically coupled to respective second terminals of the field effect transistors, and conductive material on the programmable resistance memory material and coupled to a common voltage. | 2010-11-25 |
20100295010 | ELECTRONIC DEVICE COMPRISING A CONVERTIBLE STRUCTURE - An electronic device ( | 2010-11-25 |
20100295011 | ENHANCED MEMORY DENSITY RESISTANCE VARIABLE MEMORY CELLS, ARRAYS, DEVICES AND SYSTEMS INCLUDING THE SAME, AND METHODS OF FABRICATION - A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material. | 2010-11-25 |
20100295012 | NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element comprises a resistance variable element | 2010-11-25 |
20100295013 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device according to an embodiment includes: a semiconductor substrate; a resistance element of a first conductivity type formed in one region of the semiconductor substrate; a field effect transistor of a second conductivity type formed in another region of the semiconductor substrate; and a field effect transistor of the first conductivity type formed in still another region of the semiconductor substrate. The resistance element includes: an insulating film formed in an upper layer portion of the semiconductor substrate; and a well of the first conductivity type formed immediately below the insulating film, an impurity concentration at an arbitrary depth position in the well of the first conductivity is lower than an impurity concentration at the same depth position in a channel region of the field effect transistor of the second conductivity type. | 2010-11-25 |
20100295014 | IMPROVEMENTS IN EXTERNAL LIGHT EFFICIENCY OF LIGHT EMITTING DIODES - A method to improve the external light efficiency of light emitting diodes, the method comprising etching an external surface of an n-type layer of the light emitting diode to form surface texturing, the surface texturing reducing internal light reflection to increase light output. A corresponding light emitting diode is also disclosed. | 2010-11-25 |
20100295015 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - A light emitting device includes a plurality of clusters spread on a surface of a substrate and a first semiconductor layer provided over the plurality of clusters. The first semiconductor layer may includes air gaps above the plurality of clusters. In addition, light emitting structure may include a first conductive semiconductor layer adjacent to the first semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. | 2010-11-25 |
20100295016 | FLUORESCENT FIBER CONTAINING SEMICONDUCTOR NANOPARTICLES - The present invention provides a luminescent fiber, which retains a certain shape with assembled nanoparticles, and a method for producing the luminescent fiber. Specifically, the present invention provides a luminescent fiber comprising silicon and semiconductor nanoparticles having a mean particle size of 2 to 12 nm, the luminescent fiber having a diameter of 20 nm to 2 μm, a length of 40 nm to 500 μm, an aspect ratio of 2 to 1,000, and photoluminescence efficiency of not less than 5%. | 2010-11-25 |
20100295017 | LIGHT EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted. | 2010-11-25 |
20100295018 | NANOSTRUCTURES AND METHODS OF MAKING THE SAME - A nanostructure includes a highly conductive microcrystalline layer, a bipolar nanowire, and another layer ( | 2010-11-25 |
20100295019 | NANOWIRE PHOTODETECTOR AND IMAGE SENSOR WITH INTERNAL GAIN - A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetectors, with groups of photodetectors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures. The ID nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the ID nanostructures in predetermined, registered positions on the substrate. | 2010-11-25 |
20100295020 | Method For Forming A Robust Top-Down Silicon Nanowire Structure Using A Conformal Nitride And Such Structure - A nanowire product and process for fabricating it has a wafer with a buried oxide (BOX) upper layer in which a well is formed and the ends of a nanowire are on the BOX layer forming a beam that spans the well. A mask coating is formed on the upper surface of the BOX layer leaving an uncoated window over a center part of the beam and also forming a mask coating around the beam intermediate ends between each end of the beam center part and a side wall of the well. Applying oxygen through the window thins the beam center part while leaving the wire intermediate ends over the well thicker and having a generally arched shape. A thermal oxide coating can be placed on the wire and also the mask on the BOX layer before oxidation. | 2010-11-25 |
20100295021 | Single Gate Inverter Nanowire Mesh - Nanowire-based devices are provided. In one aspect, a field-effect transistor (FET) inverter is provided. The FET inverter includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region, wherein the source and drain regions of one or more of the device layers are doped with an n-type dopant and the source and drain regions of one or more other of the device layers are doped with a p-type dopant; a gate common to each of the device layers surrounding the nanowire channels; a first contact to the source regions of the one or more device layers doped with an n-type dopant; a second contact to the source regions of the one or more device layers doped with a p-type dopant; and a third contact common to the drain regions of each of the device layers. Techniques for fabricating a FET inverter are also provided. | 2010-11-25 |
20100295022 | Nanowire Mesh FET with Multiple Threshold Voltages - Nanowire-based field-effect transistors (FETs) and techniques for the fabrication thereof are provided. In one aspect, a FET is provided having a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region, wherein one or more of the device layers are configured to have a different threshold voltage from one or more other of the device layers; and a gate common to each of the device layers surrounding the nanowire channels. | 2010-11-25 |
20100295023 | FIELD EFFECT TRANSISTOR FABRICATION FROM CARBON NANOTUBES - Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates. | 2010-11-25 |
20100295024 | SEMICONDUCTOR STRUCTURE AND METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a support and at least one block provided on the support. The block includes a stack including alternating layers based on a first semiconductor material and layers based on a second semiconductor material different from the first material, the layers presenting greater dimensions than layers such that the stack has a lateral tooth profile and a plurality of spacers filling the spaces formed by the tooth profile, the spacers being made of a third material different from the first material such that each of the lateral faces of the block presents alternating lateral bands based on the first material and alternating lateral bands based on the third material. At least one of the lateral faces of the block is partially coated with a material promoting the growth of nanotubes or nanowires, the catalyst material exclusively coating the lateral bands based on the first material or exclusively coating the lateral bands based on the third material. | 2010-11-25 |
20100295025 | CARBON NANOTUBE BASED INTEGRATED SEMICONDUCTOR CIRCUIT - Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array. | 2010-11-25 |
20100295026 | ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE - Disclosed is an organic electroluminescent element containing organic layers sandwiched between an anode and a cathode, wherein the organic layers incorporates an emission layer A containing a host compound A and at least two types of emission dopants, and an emission layer B containing a host compound B and at least one type of emission dopant, provided that at least one of the emission dopants contained in the emission layer A is a phosphorescence-emitting material. | 2010-11-25 |
20100295027 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes: an anode; a cathode; and an organic thin-film layer provided between the anode and the cathode and including at least three emitting layers. The organic thin-film layer includes: a first emitting layer adjacent to the anode; a second emitting layer adjacent to the cathode; and a third emitting layer interposed between the first emitting layer and the second emitting layer. The first emitting layer, the second emitting layer and the third emitting layer contain phosphorescent dopants. The first emitting layer and the second emitting layer use fused polycyclic aromatic derivatives as host materials. | 2010-11-25 |
20100295028 | Method of Fabricating an Electronic Device - A method of fabricating an electronic device comprises providing a layer structure ( | 2010-11-25 |
20100295029 | BENZOCHRYSENE DERIVATIVE AND AN ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - A fused aromatic ring derivative shown by the following formula (1): | 2010-11-25 |
20100295030 | FUSED AROMATIC DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - A fused aromatic derivative shown by the following formula (1): | 2010-11-25 |
20100295031 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting device and a method of manufacturing the same, the device including: a substrate; a barrier layer; a first electrode; a second electrode; and an organic layer interposed between the first electrode and the second electrode, wherein the barrier layer includes an SiO layer and an SiO | 2010-11-25 |
20100295032 | METAL COMPLEXES WITH BORON-NITROGEN HETEROCYCLE CONTAINING LIGANDS - Novel organic compounds comprising ligands containing a boron-nitrogen heterocycle are provided. In particular, the compound is a metal complex comprising a ligand containing an azaborine. The compounds may be used in organic light emitting devices to provide devices having improved photophysical and electronic properties. | 2010-11-25 |
20100295033 | ORGANIC ELECTROLUMINESCENCE ELEMENT AND METHOD FOR MANUFACTURING THE SAME - An organic electroluminescence element includes: a substrate ( | 2010-11-25 |
20100295034 | SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna. | 2010-11-25 |
20100295035 | Electro Luminescence Display Device and Method of Testing the Same - To increase the proportion of the perfects to the whole lot of final products and to reduce the cost for active matrix EL display devices by checking the operation of a TFT substrate before depositing an EL material. A capacitor for testing is connected to a drain terminal of a driving TFT in a pixel portion to observe charging and discharging of the capacitor. Whether the driving TFT is normal or not is judged by the observation, so that the rejects can be removed before the manufacturing process is completed. | 2010-11-25 |
20100295036 | STRUCTURE FOR MAKING SOLUTION PROCESSED ELECTRONIC DEVICES - There is provided a process for forming an organic electronic device wherein a TFT substrate having a non-planar surface has deposited over that substrate a planarization layer such that a substantially planar substrate, or planarized substrate, is formed. A multiplicity of thin first electrode structures having a first thickness and having tapered edges with a taper angle of no greater than 75° are formed over the planarized substrate. A multiplicity of active layers is formed over the planarized substrate. Then a buffer layer is formed by liquid deposition of a composition comprising a buffer material in a first liquid medium. The buffer layer has a second thickness which is at least 20% greater than the first thickness. A chemical containment pattern defining pixel openings is then formed over the buffer layer. A composition comprising a first active material in a second liquid medium is deposited into at least a portion of the pixel openings. Then a second electrode is formed. | 2010-11-25 |
20100295037 | Thin film transistor, display, and electronic apparatus - Disclosed herein is a thin film transistor including: a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer. The source electrode and the drain electrode are formed by use of iridium or iridium oxide. | 2010-11-25 |
20100295038 | METHOD OF MANUFACTURING FIELD-EFFECT TRANSISTOR, FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING DISPLAY DEVICE - There is provided a method of manufacturing a top contact field-effect transistor including forming a protection layer on an active layer formed in a semiconductor layer forming process, forming a photoresist film on the protection layer and pattern exposing the same in an exposure process, and developing the photoresist film passing through the exposure process using an alkaline developing liquid to form a resist pattern and removing a region exposed by the resist pattern from the protection layer to etch the protection layer in a subsequent development process; a field-effect transistor, and a method of manufacturing a display device. | 2010-11-25 |
20100295039 | METHOD FOR GROWING ZINC-OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method which has a step of growing a thermostable-state ZnO-based single crystal on a ZnO single crystal substrate at a growth temperature that is equal to or greater than 600° C. and less than 900° C. by using a metalorganic compound containing no oxygen and water vapor based on an MOCVD method. | 2010-11-25 |
20100295040 | METHOD FOR GROWING ZINC-OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method which has a low-temperature growth step of growing a buffer layer of a ZnO-based single crystal on the substrate at a growth temperature in the range of 250° C. to 450° C. using a polar oxygen material and a metalorganic compound containing no oxygen; performing a heat treatment of the buffer layer to effect a transition of the buffer layer to a thermostable-state single crystal layer; and a high-temperature growth step of growing the ZnO-based single crystal layer on the thermostable-state single crystal layer at a growth temperature in the range of 600° C. to 900° C. using a polar oxygen material and a metalorganic compound containing no oxygen. | 2010-11-25 |
20100295041 | DISPLAY - An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous. | 2010-11-25 |
20100295042 | FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE - A field effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas. | 2010-11-25 |
20100295043 | SEMICONDUCTOR DEVICE - A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad. | 2010-11-25 |
20100295044 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide: a technique capable of suppressing a titanium nitride film that is exposed at the side surface of an opening from turning into a titanium oxide film even when water permeates the opening over a pad from outside a semiconductor device and thus improving the reliability of the semiconductor device; and a technique capable of suppressing a crack from occurring in a surface protective film of a pad and improving the reliability of a semiconductor device. An opening is formed so that the diameter of the opening is smaller than the diameter of another opening and the opening is included in the other opening. Due to this, it is possible to cover the side surface of an antireflection film that is exposed at the side surface of the other opening with a surface protective film in which the opening is formed. As a result of this, it is possible to form a pad without exposing the side surface of the antireflection film. | 2010-11-25 |
20100295045 | Tape carrier package, individual tape carrier package product, and method of manufacturing the same - A tape carrier package includes: a tape base; and interconnections formed on the tape base and extending to intersect a cutting line. At least a slit is formed along each of the interconnections, to intersect the cutting line and to divide the interconnection into a plurality of interconnection elements. | 2010-11-25 |
20100295046 | SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE - After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits { | 2010-11-25 |
20100295047 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - To provide a semiconductor device which achieves a high ON current and a low OFF current at the same time, and a fabrication method thereof. | 2010-11-25 |
20100295048 | TFT Array Substrate and Method for Forming the Same - A TFT array substrate comprises an insulator base; a first metal layer on the insulator base, a first portion thereof forming a gate electrode of a TFT; a gate insulating layer overlying the first metal layer and the insulator base; an amorphous silicon layer and a first layer of conductive transparent material both on the gate insulating layer; a doped amorphous silicon layer positioned on the amorphous silicon layer; a second metal layer on the doped amorphous silicon layer and the first layer of conductive transparent material, a first portion thereof forming source and drain electrodes of the TFT; a passivation layer on the second metal layer; and a second layer of conductive transparent material on the passivation layer, a first portion thereof forming a pixel electrode, wherein the first layer of conductive transparent material forms a portion of a common electrode of the array substrate. | 2010-11-25 |
20100295049 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - The embodiment of the invention provides a manufacturing method for a thin film transistor liquid crystal display (TFT-LCD) array substrate, the manufacturing method comprises: step | 2010-11-25 |
20100295050 | THIN FILM TRANSISTOR ARRAY PANEL AND METHODS FOR MANUFACTURING THE SAME - Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed. | 2010-11-25 |
20100295051 | ELECTRO-LUMINESCENCE DEVICE INCLUDING A THIN FILM TRANSISTOR AND METHOD OF FABRICATING AN ELECTRO-LUMINESCENCE DEVICE - An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern. | 2010-11-25 |
20100295052 | Light Emitting Device, Method of Manufacturing the Same, and Manufacturing Apparatus Therefor - A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision. | 2010-11-25 |
20100295053 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE - The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer | 2010-11-25 |
20100295054 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle θ in the c-axis direction preferably satisfies −1°<θ<0°. | 2010-11-25 |
20100295055 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - To improve an adhesion to a substrate holder, and improve a device production yield by uniformizing a temperature distribution in a surface of a substrate and uniformizing characteristics such as a film thickness. When a concave warpage is set to be negative on a substrate front side, and a convex warpage is set to be positive on the substrate front side, then a line segment is drawn from one end of a substrate rear surface to the other end of the substrate rear surface, passing through a substrate center line, and a substrate is sliced by this line segment in a substrate thickness direction, a maximum value of shortest values of a distance from an arbitrary point on the drawn line segment to a rear side outline in a sliced surface, is defined as warpage H in a diameter direction, and when the warpage H in the diameter direction is obtained in a substrate peripheral direction, with its maximum value set to be Hmax, and its minimum value set to be Hmin, the warpage H in the diameter direction is defined to satisfy Hmax−Hmin≦30 μm. | 2010-11-25 |
20100295056 | III-NITRIDE MATERIALS INCLUDING LOW DISLOCATION DENSITIES AND METHODS ASSOCIATED WITH THE SAME - Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects. | 2010-11-25 |
20100295057 | DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION - An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source. | 2010-11-25 |
20100295058 | TUNNELING FIELD EFFECT TRANSISTOR SWITCH DEVICE - A tunneling field effect transistor (TFET) device includes a semiconductor substrate having a layer of relatively intermediate bandgap semiconductor material, a layer of relatively low bandgap semiconductor material overlying the layer of relatively intermediate bandgap semiconductor material, and a layer of relatively high bandgap semiconductor material overlying the layer of relatively low bandgap semiconductor material. The TFET device includes a source region, a drain region, and a channel region defined in the semiconductor substrate. The TFET device also has a gate structure overlying at least a portion of the channel region. The source region is highly doped with an impurity dopant having a first conductivity type, and the drain region is highly doped with an impurity dopant having a second conductivity type. The layer of relatively low bandgap semiconductor material promotes tunneling at a first junction between the source region and the channel region, and the layer of relatively high bandgap semiconductor material inhibits tunneling at a second junction between the source region and the channel region. | 2010-11-25 |
20100295059 | SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRYSTAL SUBSTRATE - The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm | 2010-11-25 |
20100295060 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device | 2010-11-25 |
20100295061 | RECRYSTALLIZATION OF SEMICONDUCTOR WATERS IN A THIN FILM CAPSULE AND RELATED PROCESSES - An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. Further heating creates a molten zone in space, through which the wafer travels, resulting in recrystallization with a larger grain size. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. Thermal transfer through backing plates minimizes stresses and defects. After recrystallization, the capsule is removed. | 2010-11-25 |
20100295062 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor region | 2010-11-25 |
20100295063 | LENS ARRAY AND OPTICAL MODULE HAVING THE SAME - A lens array can have monitor light reliably and can be manufactured easily. With this lens array ( | 2010-11-25 |
20100295064 | ORGANIC LIGHT EMITTING DIODE DEVICE - The invention relates to an organic light emitting diode device ( | 2010-11-25 |
20100295065 | LIGHT EMITTING AND RECEIVING DEVICE - A light emitting and receiving device having a first region and a second region adjacent to the first region in a plan view, includes: a light absorbing layer formed in the first and second regions; a first cladding layer formed above the light absorbing layer; an active layer formed above the first cladding layer in the first region; and a second cladding layer formed above the active layer, wherein at least part of the active layer forms a gain region, a stepped side surface having an end surface of the gain region is formed at the boundary between the first region and the second region, light produced in the gain region exits through the end surface of the gain region, and part of the light having exited reaches the light absorbing layer in the second region and is received by the light absorbing layer. | 2010-11-25 |
20100295066 | SEMICONDUCTOR SUBSTRATE AND METHODS FOR THE PRODUCTION THEREOF - The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side. | 2010-11-25 |
20100295067 | LIGHT EMITTING DEVICE WITH COLLIMATING STRUCTURE - The present invention provides a light collimating structure ( | 2010-11-25 |
20100295068 | LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS USING THE SAME - In one embodiment, the light emitting device package includes a package body, electrodes attached to the package body, and at least two light emitting devices electrically connected to the electrodes. Each light emitting device emits light of a different color from the other light emitting devices. A protective layer is formed over the at least two light emitting devices, and a phosphor layer formed over the protective layer. Other embodiments include other structures such a individual phosphor layers on each light emitting device. And, a light apparatus including a package may include a single driver driving the light emitting devices of the package. | 2010-11-25 |
20100295069 | High Luminous Flux Warm White Solid State Lighting Device - A high luminous flux warm white solid state lighting device with a high color rendering is disclosed. The device comprising two groups of semiconductor light emitting components to emit and excite four narrow-band spectrums of lights at high luminous efficacy, wherein the semiconductor light emitting components are directly mounted on a thermal effective dissipation member; a mixing cavity for blending the multi-spectrum of lights; a back-transferred light recycling member deposited on top of an LED driver and around the semiconductor light emitters; and a diffusive member to diffuse the mixture of output light from the solid state lighting device. The solid state lighting device produces a warm white light with luminous efficacy at least 80 lumens per watt and a color rendering index at least 85 for any lighting application. | 2010-11-25 |
20100295070 | LIGHT EMITTING DEVICE - A light emitting device comprises a plurality of LED chips (“lateral” or “vertical” conducting) operable to generate light of a first wavelength range and a package for housing the chips. The package comprises: a thermally conducting substrate (copper) on which the LED chips are mounted and a cover having a plurality of through-holes in which each hole corresponds to a respective one of the LED chips. The holes are configured such that when the cover is mounted to the substrate each hole in conjunction with the substrate defines a recess in which a respective chip is housed. Each recess is at least partially filled with a mixture of at least one phosphor material and a transparent material. In a device with “lateral” conducting LED chips a PCB is mounted on the substrate and includes a plurality of through-holes which are configured such that each chip is directly mounted to the substrate. For a device with “vertical” conducting LED chips the LED chips are mounted on a diamond like carbon film. | 2010-11-25 |
20100295071 | LIGHT EMITTING DEVICE - A light emitting device includes a carrier, a light emitting element electrically connected to the carrier, a transparent plate having at least one through hole formed therein and including a flat-portion and a lens-portion and a permeable membrane structure disposed on a surface of the transparent plate. The lens-portion covers the light emitting element and has a light incident surface, a light emitting surface, a first and a second side surfaces. A first partial beam of the light beam passes through the light incident surface and leaves from the light emitting surface. A second partial beam of the light beam passes through the light incident surface and is transmitted to the first or the second side surface. The first or the second side surface reflects at least a part of the second partial beam of the light beam to be passed through the light emitting surface. | 2010-11-25 |
20100295072 | Light-emitting diode - Disclosed is an improved light-emitting diode, which can be a PLCC or SMD type light-emitting diode. The light-emitting diode includes a package body, at least one pair of conductive terminals, and an optic lens. The package body has an end surface, a circumferential surface extending from the end surface, and a receptacle for accommodating a light-emitting chip. The pair of conductive terminals is fixed to the package body. The optic lens covers the end surface of the package body and is even expanded to cover the circumferential surface of the package body. In this way, effects of improved bonding strength, improved optic advantages, being easy to adjust to a desired angle with the optic lens, and alleviation of troubles caused by overflow of adhesive can be realized. | 2010-11-25 |
20100295073 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip ( | 2010-11-25 |
20100295074 | Light-Emitting Component Having a Wavelength Converter and Production Method - A conversion layer ( | 2010-11-25 |
20100295075 | DOWN-CONVERTED LIGHT EMITTING DIODE WITH SIMPLIFIED LIGHT EXTRACTION - A wavelength converted light emitting diode (LED) device has an LED having an output surface. A multilayer semiconductor wavelength converter is optically bonded to the LED. At least one of the LED and the wavelength converter is provided with light extraction features. | 2010-11-25 |
20100295076 | Semiconductor Component Emitting Polarized Radiation - A semiconductor component emits polarized radiation with a first polarization direction. The semiconductor component includes a chip housing, a semiconductor chip and a chip-remote polarizing filter. | 2010-11-25 |
20100295077 | MANUFACTURE OF LIGHT EMITTING DEVICES WITH PHOSPHOR WAVELENGTH CONVERSION - A method of manufacturing a light emitting device: an LED wafer having an array of LEDs formed on a surface thereof, the method comprises: a) fabricating a sheet of phosphor/polymer material comprising a light transmissive polymer material having at least one phosphor material distributed throughout its volume and in which the polymer material is transmissive to light generated by the LEDs and to light generated by the at least one phosphor material; b) selectively making apertures through the phosphor/polymer sheet at positions corresponding to electrode contact pads of the LEDs of the LED wafer; c) attaching the sheet of phosphor/polymer material to the surface of the LED wafer such that each aperture overlies a respective electrode contact pad; and d) dividing the wafer into individual light emitting devices. The method can further comprise, prior to dividing the LED wafer, cutting slots through the phosphor/polymer material that are configured to pass between individual LEDs. | 2010-11-25 |
20100295078 | MANUFACTURE OF LIGHT EMITTING DEVICES WITH PHOSPHOR WAVELENGTH CONVERSION - A method of manufacturing a light emitting device comprises: a) depositing over substantially the entire surface of a LED diode wafer having an array of LEDs formed on a surface thereof a mixture of at least one phosphor material and a polymer material, wherein the polymer material is transmissive to light generated by the LEDs and to light generated by the at least one phosphor material; b) mechanically stamping the phosphor/polymer mixture with a stamp having features configured such as to form passages in the phosphor/polymer corresponding to electrode contact pads of each LED thereby enabling access to each electrode contact pad; c) curing the polymer; d) removing the stamp; and e) dividing the LED wafer into individual light emitting devices. The stamp comprises a dissolvable material (polyvinyl alcohol) and the stamp is removed by dissolving it using a solvent (e.g. water). | 2010-11-25 |
20100295079 | MANUFACTURE OF LIGHT EMITTING DEVICES WITH PHOSPHOR WAVELENGTH CONVERSION - A method of manufacturing a light emitting device comprises: depositing over substantially the entire surface of a LED wafer having a array of LEDs formed on a surface thereof a mixture of at least one phosphor and a polymer material, wherein the polymer material is transmissive to light generated by the LEDs and to light generated by the at least one phosphor material; using laser ablation to selectively make apertures in the phosphor/polymer material corresponding to electrode contact pads of each LED thereby enabling access to each electrode contact pad; and dividing the wafer into individual light emitting devices. The method can further comprise, prior to dividing the wafer, cutting slots in the phosphor/polymer material which are configured to pass between individual LEDs. The slots are configured such that a layer of phosphor/polymer material remains on the edges of each LED after division of the wafer into individual light emitting devices. | 2010-11-25 |
20100295080 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - A light emitting device may comprise a first semiconductor layer having a first and second surfaces, the first and second surfaces being opposite surfaces, the first semiconductor layer having a plurality of semiconductor columns extending from the second surface, the plurality of semiconductor columns being separated from each other; a light emitting structure formed over the first semiconductor layer, the light emitting structure including a first conductive semiconductor layer, an active layer and a second semiconductor layer, the light emitting structure having a side surface and an exposed side surface of a semiconductor column closest to the side surface of the light emitting structure being non-aligned with the side surface of the light emitting structure; and a substrate provided adjacent to the plurality of semiconductor columns. | 2010-11-25 |
20100295081 | SINGLE OR MULTI-COLOR HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) BY GROWTH OVER A PATTERNED SUBSTRATE - A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask. | 2010-11-25 |
20100295082 | Light emitting package and light emitting package array - Example embodiments may include a light emitting device package. The light emitting device package may include a light emitting device, a package body-including a cavity having a bottom surface on which the light emitting device is mounted and a side surface for reflecting light emitted from the light emitting device, a first electrode protruding from the package body, and a second electrode coupled with the package body. The first and second electrodes may be designed to couple respectively with the second and first electrodes of another light emitting device package, thereby forming an array of light emitting device packages. | 2010-11-25 |
20100295083 | SUBSTRATES FOR MONOLITHIC OPTICAL CIRCUITS AND ELECTRONIC CIRCUITS - A multilayer wafer structure containing a silicon layer that contains at least one waveguide, an insulating layer and a layer that is lattice compatible with Group III-V compounds, with the lattice compatible layer in contact with one face of the insulating layer, and the face of the insulating layer opposite the lattice compatible layer is in contact with the silicon layer. The silicon and insulating layers contain either or both of at least one continuous cavity filled with materials such as to constitute a photodetector zone, or at least one continuous cavity filled with materials such as to constitute a light source zone. | 2010-11-25 |
20100295084 | Method of Fabricating Photoelectronic Device of Group III Nitride Semiconductor and Structure Thereof - A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer. | 2010-11-25 |
20100295085 | ORGANIC ELECTROLUMINESCENT ELEMENT, PRODUCTION METHOD FOR THE SAME, PLANAR LIGHT SOURCE, LIGHTING DEVICE, AND DISPLAY DEVICE - An organic electroluminescent element comprising:
| 2010-11-25 |
20100295086 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME, CONDUCTIVE TRANSLUCENT ELECTRODE FOR COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LAMP, ELECTRONIC DEVICE, AND MECHANICAL APPARATUS - The invention provides a compound semiconductor light-emitting element including: a substrate on which an n-type semiconductor layer ( | 2010-11-25 |
20100295087 | Light Emitting Diode with High Electrostatic Discharge and Fabrication Method Thereof - The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode. | 2010-11-25 |
20100295088 | TEXTURED-SURFACE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURE - A high efficiency textured-surface light emitting diode comprises a flip-chipped stack of Al | 2010-11-25 |
20100295089 | LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME - Provided are a light emitting device package and a method for fabricating the same. The light emitting device package comprises a substrate; a light emitting device on the substrate; a zener diode comprising a first conductive type impurity region and two second conductive type impurity regions, the first conductive type impurity region being disposed in the substrate, the two second conductive type impurity regions being separately disposed in two areas of the first conductive type impurity region; and a first electrode layer and a second electrode layer, each of them being electrically connected to the second conductive type impurity regions and the light emitting device. | 2010-11-25 |
20100295090 | MOUNT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - A mount for a semiconductor device includes a carrier, at least two metal leads disposed on a bottom surface of the carrier, and a cavity extending through a thickness of the carrier to expose a portion of the top surfaces of the metal leads. A semiconductor light emitting device is positioned in the cavity and is electrically and physically connected to the metal leads. The carrier may be, for example, silicon, and the leads may be multilayer structures, for example a thin gold layer connected to a thick copper layer. | 2010-11-25 |
20100295091 | ENCAPSULANT COMPOSITIONS, METHODS OF MANUFACTURE AND USES THEREOF - An encapsulant composition containing about 15 to about 50 wt % of an ethylene/ethyl acrylate/maleic anhydride copolymer containing about 20 to about 40 wt % of an ethylene/glycidyl (meth)acrylate copolymer; about 2 to about 30 wt % of an ethylene/butyl acrylate/maleic anhydride copolymer; about 5 to about 50 wt % of polyethylene, about 0.05 to about 5 wt % of an adhesion promoter; and optionally about 0.01 to about 2 wt % of at least one additive. The composition is useful for encapsulating thin film devices. The disclosure also relates to a method of encapsulating thin film devices with the composition and to devices produced by the method. | 2010-11-25 |
20100295092 | INTEGRATED PMOS TRANSISTOR AND SCHOTTKY DIODE - The present invention discloses an integrated PMOS transistor and Schottky diode, comprising a PMOS transistor which includes a gate, a source, a drain and a channel region between the source and drain, wherein the source, drain and channel region are formed in a substrate, and a parasitic diode is formed between the drain and the channel region; and a Schottky diode formed in the substrate and connected in reverse series with the parasitic diode, the Schottky diode having one end connected with the parasitic diode and the other end connected with the source. | 2010-11-25 |
20100295093 | REVERSE-CONDUCTING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A REVERSE-CONDUCTING SEMICONDUCTOR DEVICE - A method for manufacturing a reverse-conducting semiconductor device (RC-IGBT) with a seventh layer formed as a gate electrode and a first electrical contact on a emitter side and a second electrical contact on a collector side, which is opposite the emitter side, a wafer of a first conductivity type with a first side and a second side opposite the first side is provided. For the manufacturing of the RC-IGBT on the collector side, a first layer of the first conductivity type or of a second conductivity type is created on the second side. A mask with an opening is created on the first layer and those parts of the first layer, on which the opening of the mask is arranged, are removed. The remaining parts of the first layer form a third layer. Afterwards, for the manufacturing of a second layer of a different conductivity type than the third layer, ions are implanted into the wafer on the second side into those parts of the wafer, on which the at least one opening is arranged. Then the mask is removed and an annealing for the activation of the second layer is performed and a second electrical contact, which is in direct electrical contact to the second and third layer, is created on the second side. | 2010-11-25 |