42nd week of 2012 patent applcation highlights part 13 |
Patent application number | Title | Published |
20120261589 | SEMICONDUCTOR INSPECTING APPARATUS - In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam. | 2012-10-18 |
20120261590 | APPARATUS FOR STERILIZING THE INSIDE OF A CONTAINER - A sterilization apparatus for sterilizing containers, such as plastic water bottles employs ultra violet (UV) light sterilization technology in a portable fashion. The apparatus is a standalone unit that is intended for residential use, is portable, and is specifically configured to receive and treat multiple sized bottles without additional add-ons. The apparatus positions and includes features to hold the bottle in a horizontal position within the housing of the apparatus such that the horizontally oriented UV bulb is disposed within the inside of the bottle. | 2012-10-18 |
20120261591 | DEVICE AND METHOD FOR DETERMINING THE CONCENTRATION OF FLUOROPHORES IN A SAMPLE | 2012-10-18 |
20120261592 | CLEAR OVERCOAT COMPOSITIONS AND METHODS FOR USING AND DETECTING THE SAME - Present embodiments generally relate to a novel clear or colorless overcoat composition that may be used for overcoating, for example, ink based images and xerographic images. The overcoat composition, which may be used as a base for a clear solid ink, comprises one or more ultraviolet (UV) absorbing additives. Also included in the present embodiments is a method for using and detecting the overcoat composition in connection with a substrate, for example, a substrate that includes printed images thereon. | 2012-10-18 |
20120261593 | Method and Device for Ultraviolet Light Sterilizing - In accordance with the present invention, a device and method is provided for covering and sterilizing a stethoscope or other medical instrument for safer use. The device comprises a closed housing for shielding the object to be sterilized, a means for receiving the object, a power supply, an ultraviolet light source within the housing, and a switch for controlling that lamp. | 2012-10-18 |
20120261594 | DEVICE FOR DISTURBING THE OPERATION OF AN INTEGRATED CIRCUIT - A system for injecting faults by laser beams into an electronic circuit including: at least two lasers capable of emitting approximately parallel beams; at least one optical system receiving, on the magnifying side, the beams; and a support of the integrated circuit placed on the reducing side of the optical system. | 2012-10-18 |
20120261595 | UV IRRADIATION APPARATUS - In a memory unit | 2012-10-18 |
20120261596 | EXTREME ULTRA VIOLET LIGHT SOURCE DEVICE - An extreme ultra violet light source device of a laser produced plasma type, in which charged particles such as ions emitted from plasma can be efficiently ejected. The extreme ultra violet light source device includes: a target nozzle that supplies a target material; a laser oscillator that applies a laser beam to the target material supplied from the target nozzle to generate plasma; collector optics that collects extreme ultra violet light radiated from the plasma; and a magnetic field forming unit that forms an asymmetric magnetic field in a position where the laser beam is applied to the target material. | 2012-10-18 |
20120261597 | Mold for Forming a Radioactive Shield Component and for Shielding Radioactivity - A shield for absorbing radiation emitted during generation of a radioisotope. The shield includes an inner portion fabricated from a first type of shielding material. The shield also includes an outer portion fabricated from a second type of shielding material wherein the outer portion serves as a mold for forming the inner portion. The inner portion may be fabricated from a material which shields against gamma rays such as concrete. The outer portion may be fabricated from a material which moderates neutrons such as high density polyethylene. Additional shielding materials may be embedded into the inner portion as desired. | 2012-10-18 |
20120261598 | DIRECTLY PILOTED VALVE ASSEMBLY - A directly piloted valve assembly has a valve body including a bore, at least one inlet port, at least one outlet port and at least one exhaust port or second outlet port wherein the ports are all in fluid communication with the bore. A spool is received in the bore. The spool includes a wall defining a lumen. An actuator is received in the lumen. The actuator includes a shuttle seal channel. A shuttle seal is received in the shuttle seal channel. A solenoid is connected to the valve body. The wall of the spool includes at least one pilot hole in fluid communication with the lumen defined by the spool and the bore of the valve body. | 2012-10-18 |
20120261599 | SYSTEM AND METHODS OF SOLENOID VALVE AUTOMATION TO OPEN AND CLOSE POSITION - This device is a portable remote control knob that can replace the cooking appliances manual control knobs which is automatically set back to off position via wired or wireless methodology. The system is applicable to most cooking appliances that can be set to turn off the knobs remotely, wherein the appliance gas valve or electric control switch is remotely rotated to shutoff position. The device composed of solenoid coils, springs, sprocket, audio interface, wireless modules, motor assembly and remote control module for engaging appliances operational shaft and which, when rotated to activate the appliances it actuates the remote transceiver module. The remote transmitter device have LED indicator when the remote knob is activated. This transmitter device may include programming to adjust timer modes of the appliances knobs. | 2012-10-18 |
20120261600 | Drive Circuit for DC Latching Devices - A drive circuit for a DC latching device includes a battery, a storage element, and a plurality of switches connecting the battery to the storage element for charging the storage element from the battery and discharging the storage element into the coil of a DC latching device. The drive circuit further includes components for determining a state of the DC latching device. The drive circuit may include components for terminating the discharge of the storage element into the coil of the DC latching device in response to determining that the DC latching device has changed states to add reliability to the system and reduce energy consumption. | 2012-10-18 |
20120261601 | FINE CONTROL GAS VALVE - A fine control gas valve includes a tee having opposed first and second tee runs co-axially aligned on a longitudinal axis, and a tee branch. A valve assembly is partially received in and connected to the first tee run having a valve disc connected to a drive screw longitudinally moved by drive screw axial rotation. The valve disc includes a first slot on the valve disc having a first end and a wider second end, and a second disc slot as a mirror image of the first disc slot oppositely positioned about the valve disc. A pipe in the second tee run has a first portion of a pipe end face/seat surface in direct contact with a second tee run shoulder. The valve disc when contacting a second portion of the pipe end face/seat surface defines a valve closed condition. The first and second portions are co-planar to each other. | 2012-10-18 |
20120261602 | Valve handle for butterfly valve for bulk commodity hopper with tee - A valve handle for a bulk commodity hopper valve, the handle including an extended handle bar member, with a valve stem socket opening near its distal end, a shorter lock lever member positioned to extend the handle bar member, the members have various bends to provide clearance from interfering with the equipment to which the handle mounts, and a lock lever member having a lever tip that can enter into engagement, or release, with valve lock notches at the end of the handle bar member. | 2012-10-18 |
20120261603 | Gate Valve Having Low-Friction Coating Over Substrate and Method for Making Same - A gate valve has a body, the body having a cavity and a flow passage intersecting the cavity. A seat fabricated from a ceramic and/or hardfacing alloy matrix composite substrate is mounted to the body at the intersection of the flow passage and the cavity. A gate fabricated from a ceramic and/or hardfacing alloy matrix composite substrate is installed at the cavity and has an engaging face that slidingly engages the seat while the gate is being moved between open and closed positions. The engaging faces of the gate and seats are coated with a low-friction material to facilitate sliding. The ceramic and/or hardfacing alloy matrix composite substrate construction of the gate and seats with low friction engaging surfaces enhances the gate valve's bearing stress capacity. | 2012-10-18 |
20120261604 | FAIL SAFE RETAINING PLUG ASSEMBLY FOR A SLAM-SHUT SAFETY DEVICE - A fail safe retaining plug assembly for a slam-shut safety device includes a reset pin, a retaining plug attached to the reset pin at a proximal portion, and a safety disk attached to the reset pin at a distal portion. The retaining plug assembly is sufficiently long to prevent the safety disk from falling off of the distal portion before the safety disk contacts a valve seat. The retaining plug assembly is also sufficiently long to prevent the retaining plug from falling off of the reset pin before the safety disk contacts the valve seat. | 2012-10-18 |
20120261605 | COMPOSITION CONTAINING SPECIFIC AMIDES AND ORGANOMODIFIED SILOXANES, SUITABLE FOR PRODUCING POLYURETHANE FOAMS - Compositions suitable for producing polyurethane foams which include at least a polyol component, a catalyst catalysing the formation of a urethane or isocyanurate bond, optionally a blowing agent, optionally further additives and optionally an isocyanate component, which are characterized in that they additionally include an admixture including at least one specific amide and at least one siloxane compound, wherein the mass ratio of siloxane compounds to compounds of formula (I) is above 1:10. | 2012-10-18 |
20120261606 | MAGNETIC PIGMENTS AND PROCESS OF ENHANCING MAGNETIC PROPERTIES - A pearlescent pigment and a process for enhancing the magnetic properties of a pearlescent pigment. The pearlescent pigment has a layer with regions of γ-Fe | 2012-10-18 |
20120261607 | THERMAL STORAGE MEDIUM COMPOSITION AND THERMAL STORAGE MEDIUM - [Object] The invention provides a thermal storage medium composition capable of forming a thermal storage medium which is free from phase separation or liquid phase bleeding and is excellent in shape retention properties even at or above the maximum crystal transition temperature of a paraffin compound and further exhibits excellent fluidity when being shaped. | 2012-10-18 |
20120261608 | ETCHANT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME - Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.2 to 6; and a method for manufacturing a semiconductor device using such an etchant. | 2012-10-18 |
20120261609 | Composition and Method for Removing Metal Contaminants - A composition comprising a substrate, an organic ion, and a metal binding agent, wherein the substrate comprises a natural clay, a synthetic clay, a natural zeolite, a synthetic zeolite, a polymer resin, lignite, kaolinite, serpentine, illite, chlorite, smectite, montmorillonite, saponite, sepiolite, nontronite, beidellite, hectorite, fuller's earth, attapulgite, bentonite, analcime, chabazite, heulandite, natrolite, phillipsite, stilbite, diethyl aminoethyl, quaternary aminoethyl, or combinations thereof, wherein the organic ion comprises quaternary amines, imidazolium salts, phosphonium salts, tetra alkyl ammonium, bis-(hydrogenated tallow)-dimethyl-ammonium chloride, bis-(hydrogenated tallow)-benzyl-methyl-ammonium chloride, 4,5-dihydro-1-methyl-2-nortallow-alkyl-1-(2-tallow-amidoethyl)-imidazolium methyl sulfate, 1-ethyl-4,5-dihydro-3-(2-hydroxyethyl)-2-(8-heptadecenyl)-imidazolium ethyl sulfate, or combinations thereof, and wherein the metal-binding agent comprises mercaptan, carboxylic acid, chelating agents, amines, esters, carboxylic acids, alcohols, ethers, aldehydes, ketones, alkenes, alkynes, mercaptans, thiols, tert-dodecanethiol, nonanethiol, octanethiol, n-stearic acid, iso-stearic acid, palmitic acid, or combinations thereof. | 2012-10-18 |
20120261610 | Core-Shell Lithium Transition Metal Oxides - A lithium transition metal oxide powder for use in a rechargeable battery is disclosed, where the surface of the primary particles of said powder is coated with a LiF layer, where this layer consists of a reaction product of a fluorine-containing polymer and the primary particle surface. The lithium of the LiF originates from the primary particles surface. Examples of the fluorine-containing polymer are either one of PVDF, PVDF-HFP or PTFE. Examples of the lithium transition metal oxide are either one of —LiCo | 2012-10-18 |
20120261611 | RARE EARTH REMOVAL OF PHOSPHORUS-CONTAINING MATERIALS - This disclosure relates generally to methods and rare earth-containing additives for removing inorganic and organic phosphorus-containing target materials. | 2012-10-18 |
20120261612 | DISPERSION OF GRAPHENE-BASED MATERIALS MODIFIED WITH POLY(IONIC LIQUID) - This invention relates to a method of manufacturing a graphene dispersion, a composite of poly(ionic liquid) and graphene manufactured thereby, and a manufacturing method thereof, which can manufacture the poly(ionic liquid)-modified graphene using the graphene dispersion which is manufactured by exfoliating graphite with an ionic liquid. | 2012-10-18 |
20120261613 | ABSORBENT AND PASSIVATION LAYER FOR OTPICAL ELEMENT COMPRISING THE SAME - This invention relates to an absorbent and a passivaton layer for an optical element including the same, which may suppress infiltration of moisture without blocking light, may be applied to flexible substrates and may prevent deterioration of optical elements thus maintaining emission properties during extended use. | 2012-10-18 |
20120261614 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - Providing a liquid crystal composition satisfying at least one of characteristics such as high maximum temperature of nematic phase, low minimum temperature of the nematic phase, small viscosity, suitable optical anisotropy, large negative dielectric anisotropy, large specific resistance, high stability to ultraviolet light and heat, or having a suitable balance regarding at least two of the characteristics; and an AM device having short response time, large voltage holding ratio, large contrast ratio, long service life and so forth. The liquid crystal composition has a negative dielectric anisotropy and contains a specific two-ring compound having a low minimum temperature as a first component, a specific compound having a large negative dielectric anisotropy as a second component, a specific compound having a low viscosity as a third component, and a specific compound having a large negative dielectric anisotropy as a fourth component. The liquid crystal display device contains the composition. | 2012-10-18 |
20120261615 | DEVICES FOR HIGH-FREQUENCY TECHNOLOGY, LIQUID-CRYSTALLINE MEDIA AND COMPOUNDS - The present invention relates to a device for high-frequency technology, or for the microwave region and millimetre wave region of the electromagnetic spectrum, characterised in that it contains a liquid-crystal medium which consists of one or more compounds, which one or more compounds, which contain 6 to 15 five-, six- or seven-membered rings, preferably 1,4-linked phenylene rings, or in that it contains a liquid-crystal medium which itself comprises a component A, which itself consists of one or more of the said compounds, which one or more compounds, which contain 6 to 15 five-, six- or seven-membered rings, preferably 1,4-linked phenylene rings. The present invention additionally relates to compounds of the formula (I), in which the parameters have the meanings given in the text, and to the corresponding, novel liquid-crystal media, to the use and preparation thereof, and to the production and use of the devices. The devices according to the invention are particularly suitable phase shifters in the microwave and millimetre wave region, for microwave and millimetre wave array antennas and very particularly for so-called tunable “reflectarrays”. | 2012-10-18 |
20120261616 | LIQUID CRYSTALLINE MEDIUM AND LIQUID CRYSTALLINE DISPLAY - The present invention relates to dielectrically positive liquid-crystalline media comprising one or more compounds of the formula I | 2012-10-18 |
20120261617 | NEAR INFRARED DOPED PHOSPHORS HAVING AN ALKALINE GALLATE MATRIX - Phosphors based on doping of an activator (an emitter) into a host matrix are disclosed herein. Such phosphors include alkaline gallate phosphors doped with Cr | 2012-10-18 |
20120261618 | REDUCTION OF HMF ETHERS WITH METAL CATALYST - Methods of making reduced derivatives of hydroxymethyl furfural using metal catalysts are described. The derivatives may have tetrahydrofuran or furan nucleus with alkoxymethyl ether or ester moieties on the 5′ carbon and methanol on the 2′ carbon. Suitable metal catalyst include Raney nickel, a nickel catalyst with a zirconium promoter, a chromite catalyst with a barium, a palladium catalyst, such as palladium on carbon, or a ruthenium catalyst. Also provided are a new class of compounds, which are n-alkoxy hexane diols (i.e., 1,2 or 1,5 hexane diol ethers) and methods of making the same by reduction of furan or tetrahydrofuran deivatives. | 2012-10-18 |
20120261619 | HYDROGEN ODORIZATION - A composition comprising: hydrogen; and an oxygenate odorant; wherein the oxygenate odorant has a vapor pressure of about 0.002 psi. or greater at 25° C. and having a smell detectable at less than 1 ppm by a human nose; wherein the oxygenate odorant includes one or more carbonyl groups; and wherein the oxygenate odorant consists only of carbon, hydrogen and oxygen. The oxygenate odorants may be cyclic or acyclic. | 2012-10-18 |
20120261620 | FUNCTIONALIZED CARBON NANOTUBES EXHIBITING ENHANCED SOLUBILITY AND METHODS OF MAKING - Functionalized carbon nanotubes and dispersions containing functionalized carbon nanotubes are provided. Exemplary functionalized carbon nanotubes include optionally substituted indene-based moieties. Methods of making functionalized carbon nanotubes and dispersions containing functionalized carbon nanotubes are provided. Methods of making conductive carbon nanotube dispersions, including films, are provided. Such methods include heating carbon nanotubes in a solvent in the absence of externally applied energy, to obtain an adduct that includes the solvent moiety bound to the carbon nanotube. Where the solvent includes an indene-based compound, the carbon nanotube thus prepared includes optionally indene-based moieties bound to the carbon nanotubes. | 2012-10-18 |
20120261621 | METAL DIALKYLDITHIOPHOSPHATE INTERMEDIATE TRANSFER MEMBERS - An intermediate transfer member includes a mixture of a polyimide, a metal dialkyldithiophosphate, a polysiloxane, and an optional conductive filler component. | 2012-10-18 |
20120261622 | LITHIUM TITANATE, MANUFACTURING METHOD THEREFOR, SLURRY USED IN SAID MANUFACTURING METHOD, ELECTRODE ACTIVE MATERIAL CONTAINING SAID LITHIUM TITANATE, AND LITHIUM SECONDARY BATTERY USING SAID ELECTRODE ACTIVE MATERIAL - Disclosed is a lithium titanate that, when used as a positive electrode active material in a lithium secondary battery having a metallic lithium negative electrode, provides a discharge capacity at a discharge rate of 30 C that is at least 75% of the discharge capacity at a discharge rate of 0.25 C. The disclosed lithium titanate can be obtained by drying, and then firing in an inert atmosphere, a slurry that contains, at least, a lithium compound, a titanium compound, a surfactant, and a carbon material. Said lithium titanate is useful as an active material in a lithium secondary battery with excellent battery characteristics, particularly rate characteristics | 2012-10-18 |
20120261623 | FIBER REINFORCED POLYMERIC COMPOSITES WITH TAILORABLE ELECTRICAL RESISTIVITIES AND PROCESS FOR PREPARING THE SAME - The present invention relates to polymer composite materials, more particularly relates to composite materials with tailor made surface electrical resistivities in the range of 10 | 2012-10-18 |
20120261624 | Metal Doped Semiconductor Nanocrystals And Methods of Making The Same - Doped semiconductor nanocrystals and methods of making the same are provided. | 2012-10-18 |
20120261625 | STABILIZED MONOMER DISPERSION CONTAINING INORGANIC OXIDE NANOPARTICLES WITH HIGH REFRACTIVE INDEX AND ITS PREPARATION - The present invention relates to a stabilized monomer dispersion containing inorganic oxide nanoparticles with high refractive index in which the refractive index of the inorganic oxide nanoparticles is greater than 1.65 and the average particle size of the high refractive inorganic oxide nanoparticles ranges from 1 to 100 nm and its content is in a range of from 1.0% by weight to 10.0% by weight based on the total weight of the monomer dispersion. The present invention also relates to a process for preparing the stabilized monomer dispersion containing high refractive inorganic oxide nanoparticles. | 2012-10-18 |
20120261626 | COMPOSITIONS INCLUDING CONTROLLED SEGREGATED PHASE DOMAIN STRUCTURES - A composition includes a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product. | 2012-10-18 |
20120261627 | Compositions of Matter, and Methods of Removing Silicon Dioxide - Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX | 2012-10-18 |
20120261628 | Manually Operated Prying Tool - A manually operated prying tool comprises a prying head and a handle. The prying head is defined at its end with an assembling hole in which are disposed a head portion of a handle of the prying tool, a ratchet wheel, a C-shaped ring, a central shaft, a spring and a cover member. By pushing the central shaft, the prying tool can be switched between a fixing mode, an adjustment mode, or a rotation mode, which allows the user to unidirectionally rotate the tool to perform micro-angle adjustment between the prying head and the handle of the prying tool, making it convenient to use the tool. | 2012-10-18 |
20120261629 | VERTICAL LIFT MECHANISM FOR USE IN CONFINED SPACES - A compact lift apparatus for use in confined spaces to raise and lower an object is described. The apparatus includes first and second drag chains with upper object mourning ends that are moveable along paths having adjacent vertical inner sections with lower ends and chain storage sections extending outwardly from the lower ends of the lower sections, the chain storage sections extending outwardly in opposite directions; spaced parallel plates on opposite sides of the chains, the plates including inner faces that together define drag chain raceways forming the paths; and drive means simultaneously conveying the drag chains along the paths between the lowered and raised positions to raise and lower the mounting ends, the drive means including first and second rotatable sprockets having teeth engaging the chain lengths and a drive means to rotate at least one of the sprockets. | 2012-10-18 |
20120261630 | LOCK FOR A PORTABLE PROTECTIVE FENCE - A lock for a fence, the lock including a seat having an opening configured to receive a socket and a lock plate rotatably coupled to the seat and configured to be coupled to a fence pole protruding from the socket. | 2012-10-18 |
20120261631 | CLAMPS FOR PANELS - There is provided a clamp securable to a panel at an edge thereof said clamp comprising: a first clamping means comprising a first clamping surface; a second clamping means comprising a second clamping surface; and a locating component, wherein said first and second clamping means and said locating component in use interlock with each other so that said first clamping surface and said second clamping surface are positioned to press respectively against opposing faces of a panel positioned therebetween. | 2012-10-18 |
20120261632 | Quick-to-erect modular civil safety barrier - A civil safety barrier ( | 2012-10-18 |
20120261633 | Self-Supporting Handrail - A self-supporting handrail including a base and a handrail section extending vertically from the base. The base is comprised of a first and a second metal plates that can be separated in a side-to-side manner; and the first metal plate has a first connecting section for being connected to the second metal plate, and the second metal plate has a second connecting section for being connected to the first metal plate. The first connecting section and the second connecting section have identical shape and are mated with each other in a face-to-face orientation. An intermediate plate(s) can be added between the first and second metal plates. The handrail section includes a pair of upstanding leg sections provided on the base, stanchion members vertically connected to the receiving members, joint members mounted on the stanchion members and horizontal handrail bars provided between the joint members. | 2012-10-18 |
20120261634 | T-POST BRACKET ATTACHMENT SYSTEM - A fencing system comprises a T-post, an upper sleeve, a lower sleeve, and a bracket. Both the upper sleeve and the lower sleeve encircle respective portions of the T-post. The sleeves are designed such that passing bolts through the sleeves cooperates with the lugs on the T-post in a manner that restricts the motion of the sleeves along the longitudinal axis of the T-post. The bracket, in turn, defines an upper mounting arm and a lower mounting arm. Capturing the upper mounting arm between the T-post and the upper sleeve and capturing the lower mounting arm between the lower sleeve and the T-post acts as an effective means by which to fixate the bracket to the T-post. | 2012-10-18 |
20120261635 | RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING - A resistive random access memory cell over a substrate includes a memory stack structure and a sidewall spacer. The memory stack structure is over the substrate and includes a first electrode layer, a second electrode layer, and a metal oxide layer between the first electrode layer and the second electrode layer. The metal oxide layer has a sidewall. The sidewall spacer is adjacent to the sidewall and has a composition including silicon, carbon, and nitrogen. | 2012-10-18 |
20120261636 | RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING - A resistive random access memory cell uses a substrate and includes a gate stack over the substrate. The gate stack includes a first copper layer over the substrate, a copper oxide layer over the first copper layer, and a second copper layer over the copper oxide layer. | 2012-10-18 |
20120261637 | OXIDE BASED MEMORY WITH A CONTROLLED OXYGEN VACANCY CONDUCTION PATH - Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming a substoichiometric oxide over the first conductive element, forming a second conductive element over the substoichiometric oxide, and oxidizing edges of the substoichiometric oxide by subjecting the substoichiometric oxide to an oxidizing environment to define a controlled oxygen vacancy conduction path near a center of the oxide. | 2012-10-18 |
20120261638 | VERTICAL MEMORY CELL FOR HIGH-DENSITY MEMORY - This disclosure provides embodiments for the formation of vertical memory cell structures that may be implemented in RRAM devices. In one embodiment, memory cell area may be increased by varying word line height and/or word line interface surface characteristics to ensure the creation of a grain boundary that is suitable for formation of conductive pathways through an active layer of an RRAM memory cell. This may maintain continuum behavior while reducing random cell-to-cell variability that is often encountered at nanoscopic scales. In another embodiment, such vertical memory cell structures may be formed in multiple-tiers to define a three-dimensional RRAM memory array. Further embodiments also provide a spacer pitch-doubled RRAM memory array that integrates vertical memory cell structures. | 2012-10-18 |
20120261639 | STRUCTURES FOR RADIATION DETECTION AND ENERGY CONVERSION USING QUANTUM DOTS - Inorganic semiconducting materials such as silicon are used as a host matrix in which quantum dots reside to provide an energy conversion device that may be used to convert various types of radiation to electricity. | 2012-10-18 |
20120261640 | QUANTUM WELL GRAPHENE STRUCTURE FORMED ON A DIELECTRIC LAYER HAVING A FLAT SURFACE - An electronic device employing a graphene layer as a charge carrier layer. The graphene layer is sandwiched between layers that are constructed of a material having a highly ordered crystalline structure and a high dielectric constant. The highly ordered crystalline structure of the layers surrounding the graphene layer has low density of charged defects that can lead to scattering of charge carriers in the graphene layer. The high dielectric constant of the layers surrounding the graphene layer also prevents charge carrier scattering by minimizing interaction between the charge carriers and the changed defects in the surrounding layers. An interracial layer constructed of a thin, non-polar, dielectric material can also be provided between the graphene layer and each of the highly ordered crystalline high dielectric constant layers to minimize charge carrier scattering in the graphene layer through remote interfacial phonons. | 2012-10-18 |
20120261641 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a semiconductor light emitting device includes a stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. A transparent electrode is provided on a first major surface of the stacked body on a side of the first semiconductor layer, the transparent electrode having a thin part, a first thick part thicker than the thin part, and a plurality of second thick parts thicker than the thin part and extending along the first major surface from the first thick part. A first electrode is provided on the first thick part; and a second electrode is electrically connected to the second semiconductor layer. | 2012-10-18 |
20120261642 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND PHOTONIC CRYSTAL - An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or into the semiconductor layer sequence, wherein the photonic crystal is at a distance from the active layer and formed by superimposition of at least two lattices having mutually different reciprocal lattice constants normalized to the peak wavelength. | 2012-10-18 |
20120261643 | GRAPHENE NANORIBBONS AND CARBON NANOTUBES FABRICATED FROM SiC FINS OR NANOWIRE TEMPLATES - Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed. | 2012-10-18 |
20120261644 | STRUCTURE AND METHOD OF MAKING GRAPHENE NANORIBBONS - Disclosed is a ribbon of graphene less than 3 nm wide, more preferably less than 1 nm wide. In a more preferred embodiment, there are multiple ribbons of graphene each with a width of one of the following dimensions: the length of 2 phenyl rings fused together, the length of 3 phenyl rings fused together, the length of 4 phenyl rings fused together, and the length of 5 phenyl rings fused together. In another preferred embodiment the edges of the ribbons are parallel to each other. In another preferred embodiment, the ribbons have at least one arm chair edge and may have wider widths. | 2012-10-18 |
20120261645 | Graphene Device Having Physical Gap - Disclosed herein is a graphene device having a structure in which a physical gap is provided so that the off-state current of the graphene device can be significantly reduced without having to form a band gap in graphene, and thus the on/off current ratio of the graphene device can be significantly increased while the high electron mobility of graphene is maintained. | 2012-10-18 |
20120261646 | Integrated Circuits Based on Aligned Nanotubes - Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits one. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes. | 2012-10-18 |
20120261647 | METHODS OF FORMING STRUCTURES HAVING NANOTUBES EXTENDING BETWEEN OPPOSING ELECTRODES AND STRUCTURES INCLUDING SAME - A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed. | 2012-10-18 |
20120261648 | SEMICONDUCTOR COMPOSITION - An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability. | 2012-10-18 |
20120261649 | Image Sensor - An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device. | 2012-10-18 |
20120261650 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device comprising: a pair of electrodes comprising an anode and a cathode, and one or more layers arranged between the anode and the cathode; wherein at least one of the one or more layers is a light emitting layer and wherein the one or more layers, comprises an organic compound represented by a substituted 2,2′-biimidazole. The substitutents on the biimidazole may be selected form a range of suitable substituents, including: hydrogen, a substituted or unsubstituted heterocyclic group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aralkyl group, a substituted aryl group containing at least one atom selected from the group consisting of N, O, S, Si, P, F, Cl, Br; and/or comprising at least three organic rings, the organic rings being fused or non-fused, or a number of the adjacent substituent sites may together form a substituted or unsubstituted cyclic group; furthermore some substituents may be the same or different and may be selected from the group consisting of: hydrogen, deuterium, a substituted or unsubstituted alkyl group, a halogen atom or a cyano group. | 2012-10-18 |
20120261651 | ORGANIC ELECTROLUMINESCENT ELEMENT AND NOVEL ALCOHOL-SOLUBLE PHOSPHORESCENT MATERIAL - Object of the present invention is to provide an organic electroluminescent element having an emissive layer that may be formed by wet process in the fabrication of the organic electroluminescence device with multi-layer structure and has excellent electron-injection property, electron-transfer property, durability and luminescent efficiency and a novel alcohol-soluble organic phosphorescent material that may be preferably applicable to the fabrication of the same. An organic electroluminescent element | 2012-10-18 |
20120261652 | Electro-Optical, Organic Semiconductor Component and Method for the Production Thereof - The invention relates to an electro-optical, organic semiconductor component with a flat arrangement of stacked, organic layers. The invention further relates to a method for producing an electro-optical, organic semiconductor component. | 2012-10-18 |
20120261653 | ORGANIC ELECTROLUMINESCENCE ELEMENT, MANUFACTURING METHOD THEREOF, AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - An organic EL element ( | 2012-10-18 |
20120261654 | ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE - Provided is an organic electroluminescent element comprising a substrate having thereon an anode, a cathode, and a plurality of organic layers sandwiched between the anode and the cathode,
| 2012-10-18 |
20120261655 | Inorganic-Organic Hybrid Thin-Film Transistors Using Inorganic Semiconducting Films - Inorganic semiconducting compounds, composites and compositions thereof, and related device structures. | 2012-10-18 |
20120261656 | PHOTODIODE, LIGHT SENSOR DEVICE AND FABRICATING METHOD THEREOF - A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed. | 2012-10-18 |
20120261657 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In | 2012-10-18 |
20120261658 | ZnO-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure. | 2012-10-18 |
20120261659 | Light Emitting Element and Display Device Using the Same - A light emitting element according to the invention comprises a plurality of layers which is interposed between a pair of electrodes, in which at least one of the plurality of layers is formed of a layer containing a light emitting material, and the layer containing a light emitting material is interposed between a layer containing an oxide semiconductor and/or metal oxide and a material having a higher hole transporting property than an electron transporting property, and a layer containing an oxide semiconductor and/or metal oxide, a material having a higher electron transporting property than a hole transporting property and a material which can donate electrons to the material having a higher electron transporting property than a hole transporting property. | 2012-10-18 |
20120261660 | OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide semiconductor is formed to thus prevent degeneration of the oxide semiconductor in etching the source and drain electrodes. | 2012-10-18 |
20120261661 | ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it. | 2012-10-18 |
20120261662 | INTEGRATED CIRCUIT WITH TEST CIRCUIT - An integrated circuit system comprising a first integrated and at least one of a second integrated circuit, interposer or printed circuit board. The first integrated circuit further comprising a wiring stack, bond pads electrically connected to the wiring stack, and bump balls formed on the bond pads. First portions of the wiring stack and the bond pads form a functional circuit, and second portions of the wiring stack and the bond pads form a test circuit. A portion of the bump balls comprising dummy bump balls. The dummy bump balls electrically connected to the second portions of the wiring stack and the bond pads. The at least one of the second integrated circuit, interposer orprinted circuit board forming a portion of the test circuit. | 2012-10-18 |
20120261663 | DISPLAY PANEL AND METHOD OF MANUFACTURING DISPLAY PANEL - A display panel according to the present invention includes a first substrate including a first electrode portion and a connecting portion electrically connecting the first electrode portion to an external interconnection; a second substrate including a second electrode portion and disposed to face the first substrate; and a common transfer material electrically connecting the first electrode portion and the second electrode portion. The second electrode portion includes a detecting portion for detecting damage to the second substrate. The detecting portion is electrically connected to the first electrode portion and the external interconnection through the common transfer material. By the configuration as described above, it becomes possible to easily detect cracking, chipping and the like in the second substrate having no direct connection to the external interconnection. | 2012-10-18 |
20120261664 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device including a bit line, a word line, a transistor, and a capacitor is provided. The transistor includes source and drain electrodes; an oxide semiconductor film in contact with at least both top surfaces of the source and drain electrodes; a gate insulating film in contact with at least a top surface of the oxide semiconductor film; a gate electrode which overlaps with the oxide semiconductor film with the gate insulating film provided therebetween; and an insulating film covering the source and drain electrodes, the gate insulating film, and the gate electrode. The transistor is provided in a mesh of a netlike conductive film when seen from the above. Here, the drain electrode and the netlike conductive film serve as one and the other of a pair of capacitor electrodes of the capacitor. A dielectric film of the capacitor includes at least the insulating film. | 2012-10-18 |
20120261665 | LIGHT EMITTING DEVICE AND METHOD OF DRIVING THE LIGHT EMITTING DEVICE - A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element ( | 2012-10-18 |
20120261666 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE AND STRUCTURE THEREOF - A method of manufacturing a thin film transistor array substrate and a structure of the same are disclosed. The manufacturing method merely requires two steps of mask fabrication to accomplish the manufacture of thin film transistor array, in which the manufacturing method utilizes a first mask fabrication step to define a pattern of a source electrode and a drain electrode of the thin film transistor, and a partially-exposed dielectric layer, and utilizes a second mask fabrication step to define an arrangement of a transparent conductive layer. The manufacturing method and structure can dramatically reduce the manufacturing cost of masks and simplify the whole manufacturing process. | 2012-10-18 |
20120261667 | DISPLAY DEVICE - A display device according to the present invention includes a barrier layer formed over the transistor and a planarization layer formed over the barrier layer. The planarization layer has an opening and an edge portion of the planarization layer formed at the opening of the planarization layer is rounded. Further, a resin film is formed over the planarization layer and in the opening of the planarization layer, and the resin film also has an opening and an edge portion of the resin film formed at the opening of the resin film is rounded. A light emitting member is formed over the resin film. | 2012-10-18 |
20120261668 | DISPLAY DEVICE - A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region. | 2012-10-18 |
20120261669 | PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND THE MANUFACTURING METHOD THEREOF - The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors. | 2012-10-18 |
20120261670 | BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION - A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer. | 2012-10-18 |
20120261671 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE - It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween. | 2012-10-18 |
20120261672 | MINIMIZING LEAKAGE CURRENT AND JUNCTION CAPACITANCE IN CMOS TRANSISTORS BY UTILIZING DIELECTRIC SPACERS - A semiconductor structure and method for forming dielectric spacers and epitaxial layers for a complementary metal-oxide-semiconductor field effect transistor (CMOS transistor) are disclosed. Specifically, the structure and method involves forming dielectric spacers that are disposed in trenches and are adjacent to the silicon substrate, which minimizes leakage current. Furthermore, epitaxial layers are deposited to form source and drain regions, wherein the source region and drain regions are spaced at a distance from each other. The epitaxial layers are disposed adjacent to the dielectric spacers and the transistor body regions (i.e., portion of substrate below the gates), which can minimize transistor junction capacitance. Minimizing transistor junction capacitance can enhance the switching speed of the CMOS transistor. Accordingly, the application of dielectric spacers and epitaxial layers to minimize leakage current and transistor junction capacitance in CMOS transistors can enhance the utility and performance of the CMOS transistors in low power applications. | 2012-10-18 |
20120261673 | SiC Semiconductor Power Device - A semiconductor power device includes a SiC semiconductor body. At least part of the SiC semiconductor body constitutes a drift zone. A first contact is at a first side of the SiC semiconductor body. A second contact is at a second side of the SiC semiconductor body. The first side is opposite the second side. A current path between the first contact and the second contact includes at least one graphene layer. | 2012-10-18 |
20120261674 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - The present invention provides a semiconductor device, which is formed on a semiconductor substrate, comprising a gate stack, a channel region, and source/drain regions, wherein the gate stack is on the channel region, the channel region is in the semiconductor substrate, the source/drain regions are embedded in the semiconductor substrate, and each of the source/drain regions comprises a sidewall and a bottom, a second semiconductor layer being sandwiched between the channel region and a portion of the sidewall distant from the bottom, a first semiconductor layer being sandwiched between the semiconductor substrate and at least a portion of the bottom distant from the sidewall, and an insulating layer being sandwiched between the semiconductor substrate and the other portions of the bottom and/or the other portions of the sidewall. The present invention also provides a method for forming the semiconductor device. The present invention helps preventing the dopants in the source/drain regions from diffusing into the substrate. | 2012-10-18 |
20120261675 | VERTICAL JUNCTION FIELD EFFECT TRANSISTORS WITH IMPROVED THERMAL CHARACTERISTICS AND METHODS OF MAKING - Vertical junction field effect transistors (VJFETs) having improved heat dissipation at high current flow while maintaining the desirable specific on-resistance and normalized saturated drain current properties characteristic of devices having small pitch lengths are described. The VJFETs comprise one or more electrically active source regions in electrical contact with the source metal of the device and one or more electrically inactive source regions not in electrical contact with the source metal of the device. The electrically inactive source regions dissipate heat generated by the electrically active source regions during current flow. | 2012-10-18 |
20120261676 | SiC FIELD EFFECT TRANSISTOR - A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region. | 2012-10-18 |
20120261677 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND THE SILICON CARBIDE SEMICONDUCTOR DEVICE - Silicon carbide semiconductor device includes trench, in which connecting trench section is connected to straight trench section. Straight trench section includes first straight trench and second straight trench extending in parallel to each other. Connecting trench section includes first connecting trench perpendicular to straight trench section, second connecting trench that connects first straight trench and first connecting trench to each other, and third connecting trench that connects second straight trench and first connecting trench to each other. Second connecting trench extends at 30 degrees of angle with the extension of first straight trench. Third connecting trench extends at 30 degrees of angle with the extension of second straight trench. A manufacturing method according to the invention for manufacturing a silicon carbide semiconductor device facilitates preventing defects from being causes in a silicon carbide semiconductor device during the manufacture thereof. | 2012-10-18 |
20120261678 | METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING CHIP AND SEMICONDUCTOR LIGHT-EMITTING CHIP - In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed. A semiconductor light-emitting chip is obtained by forming, on an element-group formation substrate on a front surface of which semiconductor light-emitting elements are formed, the front surface being composed of a C-plane of a sapphire single crystal, dividing grooves extending toward a first direction along an M-plane of the sapphire single crystal and the front surface of the substrate from a substrate front surface side (step | 2012-10-18 |
20120261679 | LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A light-emitting device and a method of fabricating the same, in which the light emission characteristics of the light-emitting device in the UV range are maximized such that a high-efficiency light-emitting device can be produced at low cost. For this, the method includes the step of forming a zinc oxide light-emitting layer on a base substrate, the zinc oxide light-emitting layer including zinc oxide doped with a dopant; and activating the dopant by rapidly heat-treating the zinc oxide light-emitting layer, so that light emission in an ultraviolet range is increased. | 2012-10-18 |
20120261680 | LED Array Having Embedded LED and Method Therefor - An LED array comprises a base layer, at least one LED disposed on the base layer, and a diffusion layer including a luminescent material. The diffusion layer covers the at least one LED and the base layer in such a way that light emitted from the at least one LED passes through the diffusion layer. | 2012-10-18 |
20120261681 | PRODUCING METHOD OF LIGHT EMITTING ELEMENT TRANSFER SHEET, PRODUCING METHOD OF LIGHT EMITTING DEVICE, LIGHT EMITTING ELEMENT TRANSFER SHEET, AND LIGHT EMITTING DEVICE - A method for producing a light emitting transfer sheet includes the steps of preparing a light emitting element sheet including a light semiconductor layer connected to an electrode portion on one side surface and a phosphor layer laminated on the other side surface; dividing the light emitting element sheet into plural pieces to form a plurality of light emitting elements; disposing a plurality of the light emitting elements on a substrate to be spaced apart from each other; forming a reflecting resin layer containing a light reflecting component on the substrate so as to cover the light emitting elements; and removing the reflecting resin layer partially so that one side surface of the electrode portion is exposed from the reflecting resin layer. | 2012-10-18 |
20120261682 | BACKLIGHT MODULE - A backlight module comprises a back plate, a first light source module, and an optical component. The optical component includes a side surface and a bottom surface perpendicularly connected to the side surface. The first light source module comprises a plurality of first LEDs disposed on the back plate and at the side surface of the optical component for emitting light at a first wavelength toward the side surface of the optical component. The light is directed in a specific direction by the optical component and then sent out from an emitting surface. The backlight module further comprises a second light source module. The second light source module comprises a plurality of second LEDs disposed near the bottom surface of the optical component for emitting light at a second wavelength toward the bottom surface of the optical component. Light produced after the light at the first wavelength mixes with the light at the second wavelength becomes white light after passing through the optical component. | 2012-10-18 |
20120261683 | ORGANIC EL DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - An organic EL device includes light emitting functional layers as a first layer with a function of emitting light of a first color which are provided between anodes and a cathode, a light emitting functional layer as a second layer with a function of emitting light of a second color, first light emitting elements that include an intermediate layer as a third layer which is provided between the light emitting functional layers and that emits light of the first color, and a second light emitting element that includes the light emitting functional layer that is provided between the anode and the common cathode, wherein the light emitting functional layers and the intermediate layer are formed using a liquid phase process, the light emitting functional layer is formed using a gaseous phase process, and the intermediate layer is composed of an organic material in which an electron injection material is dispersed. | 2012-10-18 |
20120261684 | ORGANIC EL DEVICE AND ELECTRONIC APPARATUS - An organic EL device includes a reflecting layer which has at least light reflectivity, a first electrode which is arranged on the reflecting layer through a first insulating layer, an organic functional layer which is arranged on the first electrode and includes at least a light emitting layer, a second electrode which is arranged on the organic functional layer and has at least light reflectivity, and a holding capacitance. In the organic EL device, an optical resonator which resonates light from the organic functional layer is formed by the reflecting layer and the second electrode, and the holding capacitance is formed using the reflecting layer, the first insulating layer, and the first electrode. | 2012-10-18 |
20120261685 | DISPLAY DEVICE - A display device including light emitting elements corresponding to respective colors disposed on a substrate. Each of the light emitting elements corresponding to the respective colors has a cavity structure in which a light emission functioning layer including a light emitting layer is held between a reflecting electrode and a semi-transmitting electrode. The light emission functioning layer except for the light emitting layer is common to the light emitting elements corresponding to the respective colors. | 2012-10-18 |
20120261686 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes: a carrier; an adhesive layer formed on the carrier; and a plurality of light-emitting units disposed separately on the conductive adhesive layer, wherein each of the light-emitting units includes a first semiconductor layer, a light-emitting layer surrounding the first semiconductor layer, a second semiconductor layer surrounding the light-emitting layer; and a conductive structure connecting the first semiconductor layers of the light-emitting units to each other. | 2012-10-18 |
20120261687 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer. | 2012-10-18 |
20120261688 | LED WAVELENGTH-CONVERTING STRUCTURE INCLUDING A THIN FILM STRUCTURE - A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure. | 2012-10-18 |