41st week of 2009 patent applcation highlights part 12 |
Patent application number | Title | Published |
20090250628 | FLUORESCENCE DETECTING APPARATUS AND FLUORESCENCE OBSERVATION SYSTEM - A fluorescence detecting apparatus includes a light detecting device disposed in a light path of fluorescence generated in an illuminated area of a specimen and a barrier filter disposed in the light path toward the light detecting device to exhibit transparency for each of a plurality of fluorescences having separated wavelength bands. | 2009-10-08 |
20090250629 | Methods for Detecting Fluorescent Signals in a Biological Sample - Operational means for automatic microscopic detection and analysis of fluorescent signals from a treated biological sample. | 2009-10-08 |
20090250630 | PHOTODIODE FOR DETECTION WITHIN MOLECULAR DIAGNOSTICS - A photodiode ( | 2009-10-08 |
20090250631 | APPARATUS AND METHOD FOR FLUORESCENCE IMAGING AND TOMOGRAPHY USING SPATIALLY STRUCTURED ILLUMINATION - An imaging system is disclosed for imaging an object. More specifically, an improvement is disclosed in an imaging system enabling depth sectioned fluorescence imaging in a turbid medium, such as human or animal tissue, in such a manner as to substantially minimize the excitation radiation from reaching the detection beam path. The imaging system includes an arrangement of the excitation radiation source such that the optical axis of the source is inclined relative to the optical axis of the camera, the optical plane of the source and the optical plane of the object are subject to a Scheimpflug condition provided by projection optics, and the angle of inclination of the source is selected such that the excitation radiation incident upon the object is reflected in such a way that substantially minimizes excitation radiation from reaching the detection beam path. | 2009-10-08 |
20090250632 | Method and Arrangement for Collimated Microscopic Imaging - A method and arrangement for collimated microscopic imaging, including a first illumination of a sample in at least one region for exciting fluorescence, and a spatially resolving detection of the sample light by detector elements, the detection being associated with the region, wherein by means of a second illumination a sub-division of the region into separate fluorescent partial regions occurs, which are associated with the detector elements. The separation of the partial regions is carried out by the spatial separation of the fluorescent regions by means of intermediate regions having reduced fluorescence or no fluorescence, and/or by means of different spectral properties of the fluorescence from the partial regions. | 2009-10-08 |
20090250633 | RADIATION IMAGE CONVERSION PANEL AND MANUFACTURING METHOD THEREOF - An objective is to provide a high quality radiation image conversion panel and a manufacturing method thereof in which strength and heat resistance of an undercoat resin layer, and no cracks are generated in a stimulable phosphor layer. Disclosed is a radiation image conversion panel comprising a support and provided thereon, a stimulable phosphor layer, wherein a crosslinked undercoat resin layer that is formed between the support and the stimulable phosphor layer has a chemical bonding intensity ratio of NCO group/methyl group of 0.2-2.0. | 2009-10-08 |
20090250634 | Back illumination method for counter measuring IR guided missiles - Commercial aircraft are protected from attack by infrared seeking guided missiles through the utilization of a ground-based directed infrared countermeasure system in which the deployment of an IR guided missile is detected off-aircraft and more particularly on the ground. An infrared laser beam is projected towards the detected missile such that the projected laser infrared radiation impinges upon the missile from the rear. The off-axis infrared radiation illuminates the IR transmissive dome at the head of the missile where it is internally reflected back towards the IR detector carried by the missile through the total internal reflection characteristics of the dome. The domes of these missiles are typically made of a high index of refraction IR transmissive materials such that the material is prone to total internal reflection. The infrared laser generated radiation is a modulated so as to interfere with the guidance system of the missile causing it to execute a turn and plunge to the ground. In one embodiment, the long wavelength infrared laser is a 100-W laser with a beam width of 100 microradians, thus to provide a zone of protection of about three miles. | 2009-10-08 |
20090250635 | METHOD AND APPARATUS FOR PROCESSING MULTIPHOTON CURABLE PHOTOREACTIVE COMPOSITIONS - A method including providing a substrate having thereon a layer including a multiphoton polymerizable composition, applying a light beam to at least one region of the layer, wherein the light beam cures or initiates cure of the multiphoton curable photoreactive composition; and processing a portion of the light beam reflected off the substrate to obtain a location signal of an interface between the layer and the substrate at each region. | 2009-10-08 |
20090250636 | CHARGED PARTICLE SUPPLYING APPARATUS - A charged particle supplying apparatus includes a discharging unit that generates charged particles and discharge the charged particles toward a predetermined position of a human body as an object, and an electric potential holding unit that holds electric potential of the human body so that the discharged charged particles are continuously induced or adsorbed by a predetermined position of the human body, wherein the electric potential holding unit includes an insulation circuit that prevents overcurrent from flowing to the object, and an electrifying unit that is connected to the electric potential holding unit and that is charged by the electric potential holding unit is provided on a surface of a gripping portion that is formed in a predetermined shape such that the gripping portion can be gripped. | 2009-10-08 |
20090250637 | System and methods for filtering out-of-band radiation in EUV exposure tools - In a first aspect, an apparatus for exposing a substrate with EUV radiation is described herein which may comprise a target material; a laser source generating a laser beam having a wavelength, λ, for irradiating the target material to generate EUV radiation, the laser beam defining a primary polarization direction; at least one mirror reflecting the EUV radiation along a path to the substrate; and a polarization filter disposed along the path filtering at least a portion of light having the wavelength, λ. | 2009-10-08 |
20090250638 | EUV PLASMA DISCHARGE LAMP WITH CONVEYOR BELT ELECTRODES - The present invention relates to a plasma discharge lamp for generating EUV radiation and/or soft X-rays by means of an electrically operated discharge. The proposed lamp comprises at least two electrodes arranged in a discharge space at a distance from one another to form a gap which allows the ignition of a plasma ( | 2009-10-08 |
20090250639 | Radiation source - A radiation source includes a chamber, a supply constructed and arranged to supply a substance to the chamber at a location that allows the substance to pass through an interaction point within the chamber, a laser constructed and arranged to provide a laser beam to the interaction point so that a radiation emitting plasma is produced when the laser beam interacts with the substance at the interaction point, and a conduit constructed and arranged to deliver a buffer gas into the chamber. The conduit has an outlet located adjacent to the interaction point. | 2009-10-08 |
20090250640 | PROCESS FOR MANUFACTURING A THICK PLATE ELECTROFORMED MONOBLOC MICROWAVE SOURCE - Microwave source and polarizer which is formed of an electroformed monobloc comprising a thick plate or septum, greater than 1 mm in thickness. Frequencies of application include the 7.25 GHz and 8.4 GHz frequency bands. | 2009-10-08 |
20090250641 | Extreme ultra violet light source apparatus - An extreme ultra violet light source apparatus in which debris moving within a chamber are prevented from reducing reflectance or transmittance of optical elements of an EUV collector mirror, etc, and extreme ultra violet light can stably be generated in a long period. The apparatus includes: a target supply unit for supplying a target to a predetermined position within a chamber; a driver laser for applying a laser beam to the target to generate first plasma; a collector mirror provided within the chamber, for collecting extreme ultra violet light radiated from the first plasma; a gas supply unit for supplying a gas into the chamber; an excitation unit for exciting the gas to generate second plasma around a region where the first plasma is generated; and an exhaust unit for exhausting the chamber and ejecting debris emitted from the first plasma to outside of the chamber. | 2009-10-08 |
20090250642 | Image Detecting Apparatus - An image detecting apparatus includes an illumination system and a sensing system. The illumination system is for providing a light beam to a working surface to generate a reflected light beam by the working surface. The sensing system includes a sensing unit and a condensing unit. The sensing unit is disposed on a transmission path of the reflected light beam reflected by the working surface for receiving the reflected light beam. The condensing unit is disposed between the sensing unit and the working surface, wherein an optical axis of the condensing unit is deviated from a main optical axis of the reflected light beam. | 2009-10-08 |
20090250643 | Fast response check control valve - A check valve for a vehicle actuator includes a hardened valve seat insert pressed into a non-hardened housing. The insert defines a lobed valve seat against which fluid urges a valve element, with the valve element being distanced from the valve seat by a rod to open the valve when an actuating coil is deenergized. When the coil is energized the rod is moved away from the valve element, allowing fluid pressure to urge the element against the seat to close the valve. The insert can be formed with a rod guide. | 2009-10-08 |
20090250644 | ELECTRIC VALVE ACTUATION SYSTEM - A machine includes a piston disposed in a housing and configured to reciprocate in the housing. At least one valve is coupled to the housing. A magnetically-geared valve actuation system is coupled to the at least one valve. A plurality of sensors is configured to detect a plurality of parameters related to the machine. A control system is coupled to the plurality of sensors and the magnetically-geared valve actuation system. The magnetically-geared valve actuation system is configured to actuate the at least one valve in response to reciprocation of the piston in the housing, signals originating from the sensors or control system, or combinations thereof. | 2009-10-08 |
20090250645 | SOLENOID VALVE - A solenoid valve includes a valve housing in which a spool valve element is fitted to be reciprocably slidable along an axis; a magnet coil that moves the spool valve element in a first direction along the axis by an action of an electromagnetic force; a return spring that biases the spool valve element in a second direction, opposite to the first direction, and moves the spool valve element in the second direction when the magnet coil is not excited; and first and second attraction members that are respectively fixed to the spool valve element and the valve housing such that they are spaced from each other along the axis by a distance no less than a maximum moving amount of the spool valve element and attract each other by an attraction force smaller than a bias force of the return spring when the magnet coil is not excited. | 2009-10-08 |
20090250646 | FLUID CONTROL VALVE - A fluid control valve wherein a main valve body includes: a high-pressure passage for providing communication between a suction port and a sleeve in which a spool is fitted; a tank passage for providing communication between a discharge port and the sleeve; a lift lock poppet located between the sleeve and a cylinder port and capable of assuming an open position for providing communication between the sleeve and the cylinder port; a hydraulic fluid discharge passage for providing communication between a back-pressure chamber provided within the lift lock poppet and the sleeve; a hydraulic fluid delivery passage located between the sleeve and the lift lock poppet; and a cylinder passage located between the lift lock poppet and the cylinder port and allowed to communicate with the hydraulic fluid delivery passage when the lift lock poppet is in the open position, is further provided with a communication passage for providing communication between the hydraulic fluid discharge passage and the hydraulic fluid delivery passage to reduce a pressure change inside the hydraulic fluid delivery passage which occurs just after the lift lock poppet has been moved into the open position, thereby retarding a rapid movement of the lift lock poppet toward an operating end while suppressing generation of a high collision noise upon collision of the lift lock poppet with the operating end. | 2009-10-08 |
20090250647 | Piercing Valve Stem Assembly and System - A simplified piercing valve stem assembly system and apparatus which includes a valve stem component to which a piercing point has been securely affixed, and an easily manufactured stub-out with a flattened or partially flattened end adapted for piercing. | 2009-10-08 |
20090250648 | Gate Valve for Vacuum Apparatus - Even when a gate valve for a vacuum apparatus used in a vapor deposition apparatus is in an open position, reliability of keeping a vapor deposition chamber vacuum can be improved by protecting an inner wall surface of a valve casing and a sealing member of a valve body against a vapor of a vapor deposition material. A gate valve ( | 2009-10-08 |
20090250649 | Gate Valve for Vacuum and Seal Member Used Therefor - A gate valve for vacuum capable of preventing a seal member from being cracked or particles from being produced due to a stress concentration even if the seal member is repeatedly compressed in the state that the adhesive agent is separated from the open side of a seal member mounting groove and capable of suppressing particles from being produced due to the rub of the seal top part with the seal surface. | 2009-10-08 |
20090250650 | Compositions Comprising A Fluoroolefin - The present invention relates to compositions for use in refrigeration, air-conditioning, and heat pump systems wherein the composition comprises a fluoroolefin and at least one other component. The compositions of the present invention are useful in processes for producing cooling or heat, as heat transfer fluids, foam blowing agents, aerosol propellants, and fire suppression and fire extinguishing agents. | 2009-10-08 |
20090250651 | DICHALCOGENIDE THERMOELECTRIC MATERIAL - A dichalcogenide thermoelectric material having a very low thermal conductivity in comparison with a conventional metal or semiconductor is described. The dichalcogenide thermoelectric material has a structure of Formula 1 below: | 2009-10-08 |
20090250652 | STABLE SEDIMENT DISPERSION, METHOD FOR PRODUCTION AND USE THEREOF - The present invention relates to a stable sediment dispersion which can be used above all as electrorheological (ERF) and/or magnetorheological fluid (MRF), a method for production thereof and also use thereof. | 2009-10-08 |
20090250653 | Hydroxycarboxylic Acids and Salts - Compositions which inhibit corrosion and alter the physical properties of concrete (admixtures) are prepared from salt mixtures of hydroxycarboxylic acids, carboxylic acids, and nitric acid. The salt mixtures are prepared by neutralizing acid product mixtures from the oxidation of polyols using nitric acid and oxygen as the oxidizing agents. Nitric acid is removed from the hydroxycarboxylic acids by evaporation and diffusion dialysis. | 2009-10-08 |
20090250654 | ANTIFREEZE CONCENTRATE AND COOLANT COMPOSITIONS AND PREPARATION THEREOF - A toxicological friendly antifreeze composition having improved thermal stability is provided. In one embodiment, the antifreeze composition comprises from 5 to 80 wt. % of an aqueous freezing point depressant selected from alkali metal salts of acetates, formates, proprionates, adipiates, and succinates, and mixtures thereof, 0.1 to 10 wt. % of at least one of a 2-ethylhexanoic acid, isononanoic acid and 3,5,5-trimethylhexanoic acid; and 0.1 to 10 wt. % of at least one of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, neodecanoic acid, benzoic acid, 2-hydroxybenzoic acid, p-terbutylbenzoic acid, and mixtures thereof. In one embodiment, the composition is employed as a concentrate in admixture with 10 to 90 wt. % water. The composition may be totally free of glycol, or, in an alternate embodiment, possess a glycol:non-glycol base ratio of 1:2 to 1:20. | 2009-10-08 |
20090250655 | HEAT-CONDUCTIVE ADHESIVE - The invention provides a heat-conductive adhesive with high heat spread properties and excellent handleability. A pitch-based carbon fiber filler with high thermal conductivity and a smooth surface is combined with an adhesive resin to produce a heat-conductive adhesive with controlled viscosity and excellent handleability. | 2009-10-08 |
20090250656 | Free Radical-Forming Activator Attached to Solid and Used to Enhance CMP Formulations - A chemical mechanical polishing composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer. | 2009-10-08 |
20090250657 | Soil consolidation composition - A soil consolidation composition with a first part of an alkali metal silicate solution and a second part of a metal alcholate mixture. The alkali metal silicate of the first part is chosen from the group of alkali metal silicates including sodium, silicate, lithium silicate and potassium silicate, either individually or in combination. The metal alcholate mixture of the second part is a mixture of tri-acetine, di-acetine and tri-glycerol-di-acetine. | 2009-10-08 |
20090250658 | Dehydroxyfluorination Agent - There is provided a novel, useful dehydroxyfluorination agent containing sulfuryl fluoride (SO | 2009-10-08 |
20090250659 | STERICALLY HINDERED N-METHYL SECONDARY AND TERTIARY AMINE SULFUR SCAVENGERS AND METHODS FOR MAKING AND USING SAME - An new class of oil-soluble, sulfur scavengers or converts are disclosed where the scavengers include substantially monomeric aldehyde-amine adducts from the reaction of at least one sterically hindered primary or secondary amine and a molar excess of at least one aldehyde. Methods are also disclosed for reducing, reducing below a given level or eliminating noxious sulfur species from fluids using the inventive scavengers and for making the inventive scavengers. | 2009-10-08 |
20090250660 | COMPOSITION FOR BUILDING MATERIAL AND A PROCESS FOR THE PREPARATION THEREOF - The present invention provides a composition and a process for the preparation of chemical activated cold setting fly ash building construction materials. The chemical activator is an alkaline aqueous solution of 11.2 to 13.6 in pH and 1.25 to 1.40 gm/cc in density which contains admixtures of different concentrations of hydroxyl, sulfate, acetate and chloride bearing chemical salts of calcium, magnesium, sodium, potassium and aluminum in water medium. The reaction of chemical activator solution and the mineral constituents of fly ash mix develop binding property. The binding matrix of chemical activated fly ash mix is mostly hydrous silica and silicate group of phases which on setting under atmospheric condition attains strength suitable for building construction application. Utilization of fly ash of any source by weight ranges from 80 to 99% in manufacture of building materials including heat and acid resistance and toxic waste disposal products. | 2009-10-08 |
20090250661 | Trimetallic Nitride Clusters Entrapped Within CnN Heteroatom Cages - The present invention is directed to a family of trimetallic nitride endohedral metalloheterofullerenes having the formula A | 2009-10-08 |
20090250662 | Wholly Aromatic Thermotropic Liquid Crystal Polyester Resin Composition, Injection Molded Article Thereof, and Optical Device Using the Molded Article - Disclosed is a resin composition produced by melt-kneading a white pigment and a wholly aromatic thermotropic liquid crystal polyester. The resin composition can retain the excellent heat resistance and moldability of the wholly aromatic thermotropic liquid crystal polyester and have a satisfactory level of white light reflectance. The resin composition comprises 35 to 100 parts by weight of a white pigment particle and 100 parts by weight of a wholly aromatic thermotropic liquid crystal polyester, wherein the white pigment particle comprises 3 to 15 mass % of aluminum oxide and 97 to 85 mass % of a white pigment produced by a process including a roasting step and having a surface treated with the aluminum oxide (provided that the sum total of the white pigment and aluminum oxide is defined as 100 mass %). The resin composition can be produced by a process including a melt-kneading step. | 2009-10-08 |
20090250663 | PHOSPHOR COMPOSITION AND METHOD FOR PRODUCING THE SAME, AND LIGHT-EMITTING DEVICE USING THE SAME - A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM | 2009-10-08 |
20090250664 | SYSTEM AND METHOD FOR LIQUID DELIVERY EVALUATION USING SOLUTIONS WITH MULTIPLE LIGHT ABSORBANCE SPECTRAL FEATURES - A system and related method for improved liquid delivery evaluation using a solution containing one or more dyes such that the solution exhibits multiple distinct detectable light absorbance spectral features for calibrating or testing over extended volume or dilution ranges are described. The system includes: a photometric instrument capable of measuring optical absorbance at multiple wavelengths; one or more sample solutions to be dispensed using the liquid delivery system whose performance is being tested or calibrated; and vessels optionally pre-filled, or filled by the user, with diluent solution. The sample solutions contain one or more dyes, chosen so that multiple distinct detectable light absorbance spectral features, such as peaks and/or valleys and/or plateaus of the solution can be distinguished for volume or dilution ranges of interest. The concentrations of the dyes may be chosen so that a large volume delivery device is calibrated using a spectral feature in the solution with a low absorbance per unit pathlength, while a small volume delivery device is calibrated with the same sample solution but using a different spectral feature with a high absorbance per unit pathlength. | 2009-10-08 |
20090250665 | ORGANIC CONDUCTIVE COMPOSITIONS AND STRUCTURES - Compositions comprising at least one conductive polymer and an organic cation are provided, and methods for making the same. | 2009-10-08 |
20090250666 | METHOD FOR PRODUCING COMPOSITE MEMBER OF METAL MEMBER AND RESIN MEMBER - The invention discloses an injection molding method for manufacture of a metal-resin composite member; wherein the resin composition used in the method includes a plurality of metal particles having one or more metal melting points between about 200° C. and 400° C.; said resin composition is heated to a temperature higher than the resin melting point and higher than one or more metal melting points to provide a heated resin composition; and wherein injecting said heated resin into a mold results in contact of said heated resin with one or more disposed heated metal member(s) to provide a composite member. | 2009-10-08 |
20090250667 | Metal particle dispersion liquid, method for manufacturing metal particle dispersion liquid, method for manufacturing conductive-film-forming substrate, electronic device and electronic apparatus - A metal particle dispersion liquid comprises: a compound including a sulfur atom; metal particles whose diameter ranges from 1 to 100 nm and made of a material including a precious metal material; and a dispersion medium. The metal particles is covered by the compound. | 2009-10-08 |
20090250668 | AMORPHOUS TRANSPARENT CONDUCTIVE FILM, TARGET AND PRODUCTION METHOD FOR AMORPHOUS CONDUCTIVE FILM - An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B. | 2009-10-08 |
20090250669 | Gallium Oxide/Zinc Oxide Sputtering Target, Method of Forming Transparent Conductive Film and Transparent Conductive Film - Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga | 2009-10-08 |
20090250670 | PHOTOCHROMIC FILMS AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photochromic film for automobiles prepared by curing a photochromic composition comprising an acrylic resin, a crosslinking agent having an intramolecular UV stabilizing structure, and a photochromic dye, a preparation method of the photochromic film for automobiles, and an article comprising the photochromic film for automobiles. | 2009-10-08 |
20090250671 | Aqueous dispersion of flame retardant for textiles and process for producing same - Flame retardant aqueous dispersions or suspensions comprising tris(tribromophenoxy)-s-triazine (TTBT) or tetrabromobisphenol A bis(2,3-dibromopropyl ether) (TBBPE) or a mixture thereof and one or more nonionic or anionic surface active agent(s) and/or wetting agent(s) used in textile are described. The flame retardants exhibit high compatibility with textile materials and are stable in aqueous solutions. | 2009-10-08 |
20090250672 | Lifting Cart - A lift cart is used for car engine maintenance and comprises a moving base for mounting an oil pressure lifting device. One end of the oil pressure lifting device is provided with a platform having a rotatable adjusting device which is adjustable back and forth. The adjusting device is provided with a supporting plate, and a plurality of carrying structures for carrying different sized engine is positioned on the supporting plate. Such arrangements allow the maintenance man to make the height, back and forth, and rotation angle adjustment during disassembly of the engine. | 2009-10-08 |
20090250673 | BARRIER AND SECURING POST - Disclosed is a barrier and securing post as is used either in fixed or movable form to fence in and/or block off or secure areas and for guiding human, animal and/or traffic movements. It consists of a basic body which comprises at least one storage compartment for accommodating at least one flexible barrier arrangement. The one or more flexible barrier arrangement can be automatically retracted into the storage compartment using a band retractor. One or more storage compartments for the one or more flexible barrier arrangements are arranged inside the lower end and/or outside the lower end of the basic body of the barrier and securing post. The basic body comprises a guide for guiding the one or more flexible barrier arrangements from its lower end to its free end. This makes it possible to lower the center of gravity of the barrier and securing post, thus providing it with additional stability. Elevated wind engagement surfaces are avoided. Consequently, the technical solution is also suitable for applications in the agricultural sector, in particular for pasture fences. | 2009-10-08 |
20090250674 | Vehicle barrier system - A modular vehicle barrier system includes a reaction mass for installation in the earth; at least one post immovably anchored in the reaction mass and extending upwardly therefrom; the reaction mass having a forward member for confronting and compressing the surrounding earth and absorbing energy from the impact of the vehicle with the post. | 2009-10-08 |
20090250675 | Vehicle Barrier - A vehicle barrier having an impact side, a reflection side opposite the impact side, and a plurality of interior walls extending between the impact side and the reflection side. The refection side, the impact side, and the plurality of interior walls are formed from vertically-oriented sheets of barrier material (when in the deployed configuration). Further, the refection side, the impact side, and the plurality of interior walls define multiple chambers. The chambers can be packed with fill material to stop an oncoming vehicle. | 2009-10-08 |
20090250676 | LIQUID CRYSTALLINE ORGANIC SEMICONDUCTOR MATERIAL, AND SEMICONDUCTOR ELEMENT OR INFORMATION RECORDING MEDIUM USING THE SAME - An liquid crystalline organic semiconductor material practical as an organic semiconductor is provided. The material is a liquid crystal composition having a smectic liquid crystal phase. The liquid crystalline organic semiconductor material has a distyrylbenzene structure of formula (1). When heated to a temperature range for the smectic liquid crystal phase followed by being cooled, the material takes on a solid state as a result of phase transition from the smectic phase. | 2009-10-08 |
20090250677 | Reducing drift in chalcogenide devices - Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with time. By providing a compensating material which exhibits an opposing tendency, the drift may be compensated. The compensating material may be mixed into a chalcogenide, may be layered with chalcogenide, may be provided with a heater, or may be provided as part of an electrode in some embodiments. Both chalcogenide and non-chalcogenide compensating materials may be used. | 2009-10-08 |
20090250678 | NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE ELEMENT ARRAY - A nonvolatile memory apparatus comprises a first electrode ( | 2009-10-08 |
20090250679 | PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A phase-change memory device includes a lower electrode; and at least two phase-change memory cells sharing the lower electrode. Another phase-change memory device includes a heating layer having a smaller contact area with a phase-change material layer and a greater contact area with a PN diode structure. | 2009-10-08 |
20090250680 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times. | 2009-10-08 |
20090250681 | Non-Volatile Resistive Oxide Memory Cells, Non-Volatile Resistive Oxide Memory Arrays, And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells And Memory Arrays - A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Insulative material is deposited over the first electrode. An opening is formed into the insulative material over the first electrode. The opening includes sidewalls and a base. The opening sidewalls and base are lined with a multi-resistive state layer comprising multi-resistive state metal oxide-comprising material which less than fills the opening. A second conductive electrode of the memory cell is formed within the opening laterally inward of the multi-resistive state layer lining the sidewalls and elevationally over the multi-resistive state layer lining the base. Other aspects and implementations are contemplated. | 2009-10-08 |
20090250682 | PHASE CHANGE MEMORY DEVICE - Provided is a phase change memory device. The phase change memory device includes a first electrode and a second electrode. A phase change material pattern is interposed between the first and second electrodes. A phase change auxiliary pattern is in contact with at least one side of the phase change material pattern. The phase change auxiliary pattern includes a compound having a chemical formula expressed as D | 2009-10-08 |
20090250683 | Nitride-based semiconductor light emitting element - The purpose of the present invention is to obtain a nitride-based semiconductor light emitting element capable of improving light emission efficiency by reducing sheet resistance and a forward voltage of a translucent electrode including indium cerium oxide. The nitride-based semiconductor light emitting element of the present invention is has a translucent electrode including indium cerium oxide; and cerium oxide is contained in a ratio of 10 to 20 wt % with respect to a whole of the indium cerium oxide. | 2009-10-08 |
20090250684 | LIGHT EMITTING SEMICONDUCTOR - A semiconductor element is disclosed having a layered body of a first conductivity type, a light emitting layer, a layered body of a second conductivity type, a constriction layer having a constriction hole, and a first electrode having a lighting hole, a second electrode positioned such that charge traveling between the first and second electrodes passes through the light emitting layer. The constriction hole area is larger than the lighting hole area, and the lighting hole and the constriction hole expose a part of the layered body of the second conductivity type. A mirror is positioned such that the mirror receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type, and the mirror is constructed to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm. | 2009-10-08 |
20090250685 | LIGHT EMITTING DEVICE - Disclosed are a light emitting device. The light emitting device includes a first conductive semiconductor layer, a light emitting layer, a protective layer, a nano-layer and a second conductive semiconductor layer. The light emitting layer is formed on the first conductive semiconductor layer. The protective layer is formed on the light emitting layer. The nano-layer is formed on the protective layer. The second conductive semiconductor layer is formed on the nano-layer. | 2009-10-08 |
20090250686 | METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed. | 2009-10-08 |
20090250687 | SEMICONDUCTOR DEVICE AND METHOD TO CONTROL THE STATE OF A SEMICONDUCTOR DEVICE AND TO MANUFACTURE THE SAME - A semiconductor device includes a conduct structure to which are arranged contacts for a source and a drain, a resonance region including at least two barrier regions, at least one resonator between the barrier regions and a control electrode and which resonance region is arranged between the contacts. The conduct structure between the contacts is homogeneous and the barrier regions are formed of narrows arranged to the conduct structure. In addition, disclosed are methods to control the state of a semiconductor device and manufacture the same. | 2009-10-08 |
20090250688 | MOLECULAR QUANTUM INTERFERENCE APPARATUS AND APPLICATIONS OF SAME - A molecular quantum interference device for use in molecular electronics. In one embodiment, the device includes a molecular quantum interference unit having a first terminal group and a second terminal group between which quantum interference affects electrical conduction, a molecular spacer having a first terminal group and a second terminal group and coupled to the molecular quantum interference unit through a chemical bonding between the first terminal group of the molecular spacer and the second terminal group of the molecular quantum interference unit, a first electrode electrically coupled to the molecular quantum interference unit and configured to supply charge carriers to or receive charge carriers from the molecular quantum interference unit, and a second electrode electrically coupled to the molecular spacer and configured to receive charge carriers from or supply charge carriers to the molecular spacer. | 2009-10-08 |
20090250689 | Nanowire - A method comprises applying a first electric field pulse to a nanowire comprising a channel and a charge trapping region configured to control conductivity of the channel, the first electric field pulse having a first polarity and a relatively large magnitude of integral of electric field during the pulse and, thereafter, applying at least one further electric field pulse to the nanowire, each further electric pulse having a second, opposite polarity and each respective further electric field pulse having a relatively small magnitude of integral of electric field during the pulse. | 2009-10-08 |
20090250690 | ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - In an organic thin film transistor (TFT) substrate, the organic TFT substrate includes gate lines, data lines, a gate electrode, a source electrode, a drain electrode, a gate insulating layer, an organic semiconductor layer, and an organic protective layer. The gate and data lines are insulated from each other and cross each other to define pixel areas. The gate electrode is connected to the gate line. The source electrode is connected to the data line. The drain electrode faces the source electrode with the gate electrode disposed therebetween. The gate insulating layer covers the gate electrode and exposes a portion of the source and drain electrodes. The organic semiconductor layer contacts the source and drain electrodes. The organic protective layer is disposed on the organic semiconductor layer to protect the organic semiconductor layer. | 2009-10-08 |
20090250691 | PHASE CHANGE MEMORY ELEMENT AND METHOD FOR FORMING THE SAME - A phase change memory and method for fabricating the same are provided. The phase change memory element includes: a substrate; rectangle-shaped dielectric patterns formed on the substrate and parallel with each other; electric conductive patterns partially covering a first sidewall and the top surface of the dielectric pattern and the substrate to expose the first sidewall and a second sidewall of the dielectric pattern, wherein the electric conductive patterns covering the same dielectric pattern are apart from each other; a phase change spacer formed on the substrate and directly in contact with the exposed first and second sidewalls of the dielectric patterns, wherein the two adjacent electric conductive patterns covering the same dielectric pattern are electrically connected by the phase change spacer; and a dielectric layer formed on the substrate. | 2009-10-08 |
20090250692 | Radiation Detector With Asymmetric Contacts - A room temperature radiation detector is made from a semi-insulating Cd | 2009-10-08 |
20090250693 | Thin film transistor, display device, including the same, and associated methods - A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer. | 2009-10-08 |
20090250694 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - A semiconductor device includes a substrate and a channel region which is formed above the substrate by printing, wherein a relationship L≧ | 2009-10-08 |
20090250695 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF DISPLAY DEVICE - A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component. | 2009-10-08 |
20090250696 | NEAR NATURAL BREAKDOWN DEVICE - A semiconductor device includes a semiconductor region wherein the semiconductor region is a forced or non-forced Near Natural breakdown region, which is completely depleted when a predetermined voltage having a magnitude less than or equal to the breakdown voltage of a non-Natural breakdown (for example, Zener breakdown and Avalanche breakdown) is applied across the device. | 2009-10-08 |
20090250697 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - Methods for detecting a void in an element portion of a semiconductor device having an element portion and a void detection structure are disclosed. As a part of the method, an insulating film is formed on a substrate, a plurality of holes is formed in the insulating film, and a metal portion is formed on the insulating film to fill the plurality of holes. The metal portion is polished until the insulating film is exposed and a recessed portion is formed in the void detection structure. It is determined if a void exists in the element portion of the semiconductor device by determining whether or not a void is exposed at a surface of the recessed portion of the void detection structure. | 2009-10-08 |
20090250698 | FABRICATION MANAGEMENT SYSTEM - With the evolution of technology, there is a continual demand for enhanced speed, capacity and efficiency. A modular, chip testing system associated with a single chip on a wafer is described. This system includes a performance structure for measuring chip performance during a testing period; a power structure for measuring chip power during the testing period; an interconnect structure for measuring characteristics of interconnects within the chip during the testing period; a device structure for measuring characteristics of devices within the chip during the testing period; and a plurality of probe pads coupled to the performance structure, power structure, interconnect structure, and the device structure, wherein the plurality of probe pads receive signals during the testing period that enable the modular, chip testing system to measure characteristics of the interconnects, characteristics of the devices, chip power, and chip performance. | 2009-10-08 |
20090250699 | ELECTROMAGNETIC WAVE DETECTING ELEMENT - The present invention provides an electromagnetic wave detecting element that can suppress occurrence of cracking at a substrate peripheral portion, and occurrence of breakage of lead-out wires. An interlayer insulating film is formed so as to cover TFT switches on a substrate. An interlayer insulating film is formed so as to cover semiconductor layer of sensor portions that generate charges due to electromagnetic waves that are an object of detection being irradiated, and cover a region on the substrate where the interlayer insulating film is formed. | 2009-10-08 |
20090250700 | Crystalline Semiconductor Stripe Transistor - A transistor with crystalline semiconductor stripes and an associated fabrication process are provided. The method provides a substrate, and deposits a semiconductor layer overlying the substrate. The semiconductor layer is irradiated using a scanning step-and-repeat laser annealing process, which agglomerates portions of the semiconductor layer. In response to cooling agglomerated semiconductor material, a transistor active semiconductor region is formed including a plurality of crystalline semiconductor stripes oriented along parallel axes. In one aspect, a channel region is formed from the plurality of oriented crystalline semiconductor stripes, and the method forms a gate dielectric overlying the channel region, with a gate electrode overlying the gate dielectric. In another aspect, forming the transistor active semiconductor region includes forming source, drain, and channel regions from the plurality of oriented crystalline semiconductor stripes. | 2009-10-08 |
20090250701 | Circuit board, electronic device, and method for producing circuit board - The present invention provides a circuit board which can improve characteristics of a circuit element, an electronic device, and a method for producing a circuit board. The method for producing a circuit board of the present invention is a method for producing a circuit board including one or more polysilicon layers at the same layer level, wherein the method includes the steps of: forming a photoresist film on the polysilicon layer; forming a photoresist pattern film having side surfaces with different inclination angles by patterning the photoresist film; forming the one or more polysilicon layers having side surfaces with different inclination angles by etching the polysilicon film using the photoresist pattern film. | 2009-10-08 |
20090250702 | STATIC-TOLERANT DISPLAY APPARATUS - A display apparatus includes a thin film transistor having a top-gate structure and a storage capacitor that are arranged on a first substrate. An upper electrode of the storage capacitor has a size larger than a size of a lower electrode, so as to cover an entire surface of the lower electrode in a plan view. Thus, electric field caused by static electricity may be prevented from accumulating at a corner of the upper electrode when the electric filed flows from the lower electrode to the upper electrode, thereby preventing an intermediate insulating layer from being burnt. | 2009-10-08 |
20090250703 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern. | 2009-10-08 |
20090250704 | Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer. | 2009-10-08 |
20090250705 | SILICON CARBIDE SEMICONDUCTOR DEVICE COMPRISING SILICON CARBIDE LAYER AND METHOD OF MANUFACTURING THE SAME - A p base ohmic contact of a silicon carbide semiconductor device consists of a p++ layer formed by high-concentration ion implantation and a metal electrode. Since the high-concentration ion implantation performed at the room temperature significantly degrades the crystal of the p++ layer to cause a process failure, a method for implantation at high temperatures is used. In terms of switching loss and the like of devices, it is desirable that the resistivity of the p base ohmic contact should be lower. In well-known techniques, nothing is mentioned on a detailed relation among the ion implantation temperature, the ohmic contact resistivity and the process failure. Then, in the ion implantation step, the temperature of a silicon carbide wafer is maintained in a range from 175° C. to 300° C., more preferably in a range from 175° C. to 200° C. The resistivity of the p base ohmic contact using a p++ region formed by ion implantation at a temperature in a range from 175° C. to 300° C. becomes lower than that in a case where the p++ region is formed by ion implantation at a temperature over 300° C. Further, this can avoid any process failure. | 2009-10-08 |
20090250706 | LIGHT ACTIVATED SILICON CONTROLLED SWITCH - The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode. | 2009-10-08 |
20090250707 | Multi-chip assembly with optically coupled die - Disclosed are embodiments of a multi-chip assembly including optically coupled die. The multi-chip assembly may include two opposing substrates, and a number of die are mounted on each of the substrates. At least one die on one of the substrates is in optical communication with at least one opposing die on the other substrate. Other embodiments are described and claimed. | 2009-10-08 |
20090250708 | THIN-FILM PHOTODIODE AND DISPLAY DEVICE - A thin-film photodiode has a substrate, a thin-film element formed on the substrate and a micro lens formed above the thin-film element. The thin-film element includes a first semiconductor layer of p-type semiconductor formed on the substrate, a second semiconductor layer formed in contact with the first semiconductor layer on the substrate and formed of i-type semiconductor or p-type semiconductor having lower impurity concentration than the first semiconductor layer and a third semiconductor layer formed of an n-type semiconductor layer formed in contact with the second semiconductor layer on the substrate. The position of an optical axis center of the lens is set between a boundary between the second and third semiconductor layers and a lateral center of the second semiconductor layer. | 2009-10-08 |
20090250709 | LED PACKAGE AND LIGHT SOURCE DEVICE USING SAME - An exemplary LED package includes a dielectric plate, a heat conductor, a first planar electrode and a second planar electrode, a LED chip, and metal wires. The dielectric plate comprises a receiving groove defined therein. The heat conductor is positioned in the dielectric plate opposite to the receiving groove, and the heat conductor comprises a holding portion exposed on bottom of the receiving groove. The first and second planar electrodes are respectively received in the dielectric plate extending to the receiving groove and are spaced from the heat conductor. The first and second electrodes are respectively electrically connected to the LED chip by the metal wires. The LED chip is mounted on the holding portion of the heat conductor. | 2009-10-08 |
20090250710 | SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING MULTIPLE SEMICONDUCTOR LIGHT EMITTING ELEMENTS IN A SUBSTRATE CAVITY - Semiconductor light emitting devices include a substrate having a cavity, multiple light emitting devices in the cavity and remote phosphor layers, scattering layers and/or lenses for the light emitting devices. | 2009-10-08 |
20090250711 | Substrate for forming light-emitting layer, light emitter and light-emitting substance - To also intend the improvement of light-emitting efficiency by microcrystallizing light-emitting layer while utilizing vapor-phase growth method that is advantageous for improving crystal quality, and the like. | 2009-10-08 |
20090250712 | LIGHT EMITTING DEVICE - A light emitting device is provided, which includes a light-emitting structure and a magnetic material. The light-emitting structure has an exciting binding energy of a bandgap. The magnetic material is coupled with the light-emitting structure to produce a magnetic field in the light-emitting structure. The exciting binding energy may be higher than about 25.8 meV at room temperature. | 2009-10-08 |
20090250713 | Reflective Contact for a Semiconductor Light Emitting Device - A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed within the reflective metal. In some embodiments, the additional metal or semi-metal is a material with higher electronegativity than the reflective metal. The presence of the high electronegativity material in the contact may increase the overall electronegativity of the contact, which may reduce the forward voltage of the device. In some embodiments, an oxygen-gathering material is included in the contact. | 2009-10-08 |
20090250714 | White light emitting diode and lighting apparatus using the same - Provided is a white LED including a substrate having a reflecting body provided thereon; an LED chip mounted on the substrate; a fluorescence reflecting layer formed on the LED chip; and a phosphor layer formed on the fluorescence reflecting layer and having a higher refractive index than the fluorescence reflecting layer. | 2009-10-08 |
20090250715 | LED TRANSPARENT BRICK - An LED transparent brick comprises a transparent brick body, a photo catalyst layer, a connecting layer, a light reflection layer and one or more ultraviolet LEDs. The photo catalyst layer is placed at a first surface of the transparent brick body, and the connecting layer combines the transparent brick body and the photo catalyst layer. The light reflection layer is placed at a second surface of the transparent brick body, and the second surface corresponds to the first surface. The ultraviolet LED is placed at a side of the transparent brick body, and illuminates the photo catalyst layer to generate oxidative decomposition and hydrophilic capabilities. The light reflection layer can increase light reflection in the transparent brick body to the photo catalyst layer. | 2009-10-08 |
20090250716 | LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME - Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided. | 2009-10-08 |
20090250717 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element having at least two electrodes disposed at the side of the light output surface thereof, and a base member having a recess and lead portions corresponding to the electrodes, the light emitting element being mounted on the base member and received in the recess, wherein the light output surface faces toward opening of the recess that becomes smaller while approaching the light output surface, and the electrodes are respectively in electrical connection with the lead portions that extend from the connection positions to outer edge of the base member for power connection, and a light reflecting portion is disposed in the recess adjacent to the light output surface such that the light emitted from the light emitting element can be reflected to walls of the recess to form a substantially collimated light beam so as to improve light efficiency. | 2009-10-08 |
20090250718 | LIGHT EMITTING DIODE AND METHOD FOR PRODUCING THE SAME - A method for producing an LED includes steps of: providing a base ( | 2009-10-08 |
20090250719 | NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LASER - A nitride semiconductor device includes a semiconductor substrate composed of gallium nitride, and a stack which is provided on the semiconductor substrate and includes at least one nitride semiconductor layer containing aluminum, wherein substrate thickness T of the semiconductor substrate and a sum S of products of proportions of aluminum and thicknesses of all of the nitride semiconductor. layer containing aluminum among the stack satisfy a relationship of: T/860<=S<=T/530. | 2009-10-08 |
20090250720 | TRANSIENT VOLTAGE SUPPRESSOR AND METHODS - Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is away from the Zener region. | 2009-10-08 |
20090250721 | ELECTRICAL SURGE PROTECTIVE APPARATUS - Disclosed is an electrical surge protective apparatus comprising: a base region containing impurities of a first conductivity type; a first semiconductor region containing impurities of a second conductivity type; a second semiconductor region containing impurities of the same conductivity type as that of the second conductivity type; and a high resistance region having a lower impurity concentration than the second semiconductor region. The first semiconductor region is joined to the base region on its upper surface side. The second semiconductor region is joined to the base region on its lower surface side. The high resistance region is electrically connected to both the base region and the second semiconductor region. | 2009-10-08 |
20090250722 | METHOD FOR FORMING A COMPOUND SEMI-CONDUCTOR THIN-FILM - A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target material. The compound semiconductor target material is deposited onto a substrate to form a thin film having a composition substantially the same as a composition of the compound semiconductor target material. | 2009-10-08 |
20090250723 | Electronic Device and Heterojunction FET - In an electronic device of the present invention a gate Schottky electrode is formed on an active layer constructed of a GaN layer and an AlGaN layer, and a source ohmic electrode and a drain ohmic electrode are further formed on both sides of the gate Schottky electrode on the active layer. A dielectric layer (TiO | 2009-10-08 |
20090250724 | BIPOLAR TRANSISTOR AND METHOD OF MAKING SUCH A TRANSISTOR - A bipolar transistor is formed on a heavily doped silicon substrate ( | 2009-10-08 |
20090250725 | OHMIC METAL CONTACT PROTECTION USING AN ENCAPSULATION LAYER - A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step. | 2009-10-08 |
20090250726 | LOW VT ANTIFUSE DEVICE - A one time programmable memory cell having an anti-fuse device with a low threshold voltage independent of core circuit process manufacturing technology is presented. A two transistor memory cell having a pass transistor and an anti-fuse device, or a single transistor memory cell having a dual thickness gate oxide, are formed in a high voltage well that is formed for high voltage transistors. The threshold voltage of the anti-fuse device differs from the threshold voltages of any transistor in the core circuits of the memory device, but has a gate oxide thickness that is the same as a transistor in the core circuits. The pass transistor has a threshold voltage that differs from the threshold voltages of any transistor in the core circuits, and has a gate oxide thickness that differs from any transistor in the core circuits. The threshold voltage of the anti-fuse device is lowered by omitting some or all of the threshold adjustment implants that is used for high voltage transistors fabricated in the I/O circuits. | 2009-10-08 |
20090250727 | SUPER JUNCTION SEMICONDUCTOR DEVICE - In the specification and drawing a super junction semiconductor device is disclosed. The super junction semiconductor device comprises a P-type layer, a N | 2009-10-08 |