40th week of 2013 patent applcation highlights part 17 |
Patent application number | Title | Published |
20130256564 | STED Microscopy With Pulsed Excitation, Continuous Stimulation, And Gated Registration Of Spontaneously Emitted Fluorescence Light - In a STED fluorescence light microscope pulses of excitation light ( | 2013-10-03 |
20130256565 | Imaging during Radiotherapy - We provide a radiotherapy apparatus including a source of therapeutic radiation, a source of imaging radiation having an energy level less than that of the therapeutic radiation, a detector for radiation lying within the field of both the therapeutic radiation and the imaging radiation and able to image both, a first imaging circuit supplied with the output of the detector, a second imaging circuit also supplied with the output of the detector, a first pulse trigger circuit adapted to trigger the source of therapeutic radiation to produce a pulse of therapeutic radiation and to trigger the first imaging circuit to capture an output of the detector; and a second pulse trigger circuit adapted to trigger the source of imaging radiation to produce a pulse of imaging radiation and to trigger the second imaging circuit to capture an output of the detector. | 2013-10-03 |
20130256566 | ION IMPLANTATION APPARATUS AND CONTROL METHOD THEREOF - A vertical profile, a horizontal profile, and an integrated current value of an ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device. At a beam current adjustment stage before ion implantation, a control device simultaneously performs at least one of adjustment of a beam current to a preset value of the beam current, adjustment of a horizontal beam size that is necessary to secure uniformity of the horizontal ion beam density, and adjustment of a vertical beam size that is necessary to secure the uniformity of the vertical ion implantation distribution on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device. | 2013-10-03 |
20130256567 | EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS - An extreme ultraviolet light source apparatus in which a target material is irradiated with a laser beam and turned into plasma and extreme ultraviolet light is emitted from the plasma may include: a chamber in which the extreme ultraviolet light is generated; an electromagnetic field generation unit for generating at least one of an electric field and a magnetic field inside the chamber; and a cleaning unit for charging and separating debris adhered to an optical element inside the chamber. | 2013-10-03 |
20130256568 | EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS AND METHOD OF GENERATING ULTRAVIOLET LIGHT - An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light. | 2013-10-03 |
20130256569 | APPARATUS AND METHOD FOR NON-LATCHING, BI-DIRECTIONAL COMMUNICATION OVER AN ELECTRICALLY ISOLATED DATA LINK - An isolation apparatus and method are provided for bi-directional communication over a single wire link without circuit latch up. The isolation is provided by two identical but independent switching circuits designed to eliminate latch up while controlling two optical isolators in a bi-directional mode of operation. | 2013-10-03 |
20130256570 | VALVE AND HYDRAULIC CONTROLLER - A valve and a hydraulic controller are provider. The valve may combine a rotary-to-linear converter with the hydraulic controller to provide for at least two mechanisms for actuating the valve. Additionally, the valve may include a mechanical lock mechanism suitable for securing the valve at a desired flow position. The mechanical lock mechanism may also provide overload protection. That is, the mechanical lock mechanism may “slip” or disengage if torque forces reach undesired levels. The hydraulic controller may enable a “stepping” mode of control and “fast actuation” mode of control. The “stepping” mode may deliver a discrete quantity of a fluid, while the “fast actuation” mode may deliver a continuous quantity of the fluid. | 2013-10-03 |
20130256571 | LOCKING DEVICES FOR VALVES AND OTHER EQUIPMENT - Pin-locking devices are detailed. The devices may be placed atop inflation valves and mechanically interfere with movement of pins associated with the valves. Some versions of the devices are single-piece, rigid discs including through holes and curved protrusions interacting with inflation pins. | 2013-10-03 |
20130256572 | FLOW STRAIGHTENING SEAT RING AND CONTROL VALVE HAVING FLOW STRAIGHTENING SEAT RING - A seat ring for a control valve has a valve body defining an inlet, an outlet, and a gallery. The seat ring includes an annular body and a flow separator. The annular body is adapted to he disposed in the gallery of the valve body and includes an interior sidewall defining a port for accommodating fluid flow through the gallery. The flow separator is disposed within the port and includes a flow straightening portion defining a plurality of separate passageways. Each of the plurality of separate passageways has a hydraulic diameter and a length that is larger than the hydraulic diameter. As such, the passageways separate the flow of fluid through the port into a plurality of separate flow paths to interrupt turbulence adjacent to the port. | 2013-10-03 |
20130256573 | THROTTLE DEVICE - A throttle device for varying the pressure of a fluid in a plurality of parallel outlets includes a fluid collector having at least an internal chamber, an inlet and a plurality of outlets for the fluid, and a control element displaceably mounted in the internal chamber of the fluid collector and comprises a plurality of orifices, the cross-section of which can be varied by a relative movement of the control element in relation to the fluid collector. The control element is a sleeve, wherein the orifices are disposed in the sleeve such that they correspond to the outlets of the fluid collector, wherein between the sleeve and the fluid collector seals are provided, such that in a region between of an outside surface of the sleeve and an inside surface surrounding the internal chamber of the fluid collector no fluid communication takes place between the orifices of the sleeve. | 2013-10-03 |
20130256574 | MAGNETIC-ANISOTROPIC PLASTICALLY DEFORMED BODY, METHOD FOR PRODUCING THE SAME, AND ELECTROMAGNETIC APPARATUS USING THE SAME - A material containing a soft magnetic substance is subjected to a plastic deformation such as a roll processing to obtain a rod-shaped body. Then, the rod-shaped body or a shaped body obtained by processing the rod-shaped body into a shape other than a flat plate shape is subjected to a heat treatment in the presence of a magnetic field. The rod-shaped body or the shaped body is made magnetic-anisotropic by the heat treatment thereby to obtain a magnetic-anisotropic plastically deformed body. | 2013-10-03 |
20130256575 | GATE VALVE FOR BLOCKING A PIPE - A gate valve for blocking a pipe, wherein the gave valve comprises a valve body and a wedge, which is insertable into a wedge receptacle disposed in the valve body, wherein the wedge has a wedge plate on at least one side in the passage direction of the pipe, which is disposed on the wedge with a clearance in the direction of the center longitudinal axis of the pipe, wherein the wedge plate is adapted to be pressed by at least one elastic element against the wedge receptacle in the valve body, wherein the at least one elastic element is configured as an approximately circular-shaped circumferential bellows having a central opening. | 2013-10-03 |
20130256576 | DEVICE INTENDED TO BREAK AT LEAST ONE CLOSURE ELEMENT LOCATED INSIDE A FLEXIBLE TUBE - The invention relates to a device intended to break at least one closure element located inside a flexible tube, said closure element having a first part and a second part, said parts being separated by a weakening zone, it being possible to break said weakening zone in order to enable fluid to flow inside said flexible tube, said device comprising an assembly for holding said flexible tube, said assembly comprising a fixed element provided with a first housing intended to hold a first portion of said flexible tube, and a mobile element provided with a second housing intended to hold a second portion of said flexible tube, the two housings being aligned along a center line defining a neutral position of the mobile element, said device comprising a member for moving the mobile element to either side of its neutral position so as to be able to break the weakening zone of the closure element. | 2013-10-03 |
20130256577 | FUEL SYSTEM VALVE ASSEMBLY - A fuel system valve assembly may include a housing, a spring, and a body. The housing may have a fuel passage defined in part or more by a fuel passage wall. The fuel passage wall may have a seat and a cylindrical section. The cylindrical section may have a constant diameter and may be located downstream of the seat. In use, the body may reciprocate linearly in the housing between an open position and a closed position. The body may be biased to the closed position by the spring. The body may abut the seat when the body is in the closed position. | 2013-10-03 |
20130256578 | ADVANCED INORGANIC MATERIAL FOR REFLECTION OF ELECTROMAGNETIC WAVES - This invention provides a composition for thermal insulation, comprising magnesium oxychloride cement (MOC) and air-filled glass or ceramic beads, and a method of preparing said composition. The composition may further comprise one or more additives selected from the group consisting of titanium dioxide, fly ash, pigment, potassium dihydrogen phosphate (KH | 2013-10-03 |
20130256579 | STABLE COMPOSITIONS FOR USE AS BUILDING AND CONSTRUCTION MATERIALS - The present invention relates to a foamed or non-foamed stable composition for covering, plastering and insulating walls, floor slabs and ceilings, and also for producing insulating structural elements, casting light and insulating ferro-cement structural systems, insulating piping, ducts, filling spaces, stabilizing floors and producing cements floors, for the constructions industry, which comprises the following components: 30 to 90% anhydrite, 0 to 40% Portland cement, 0 to 70% light and/or heavy fillers, 1 to 10% activator additives, 1 to 20% setting and strength regulator additives and 1 to 12% thickening additives. | 2013-10-03 |
20130256580 | FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION - When a ferroelectric thin film-forming sol-gel solution contains a PZT-based compound, a viscosity-adjusting macromolecular compound including polyvinylpyrrolidone, and an organic dopant including a formamide-based solvent, the PZT-based compound is included at 17 mass % or more in terms of an oxide, the molar ratio of the polyvinylpyrrolidone to the PZT-based compound is PZT-based compound:polyvinylpyrrolidone=1:0.1 to 0.5 in terms of a monomer, and the formamide-based solvent is included at 3 mass % to 13 mass % of the sol-gel solution, it is possible to form a thick layer by coating the sol-gel solution once, the production efficiency improves, and crack-free and dense film formation even after calcination and firing becomes possible. | 2013-10-03 |
20130256581 | POLYMER COMPOSITE PIEZOELECTRIC BODY AND MANUFACTURING METHOD FOR THE SAME - A polymer composite piezoelectric body is obtained by conducting polarization treatment on a composite having piezoelectric particles uniformly mixed by dispersion in a polymer matrix containing cyanoethylated polyvinyl alcohol. | 2013-10-03 |
20130256582 | FERRITE THIN FILM-FORMING COMPOSITION MATERIAL, METHOD OF FORMING FERRITE THIN FILM, AND FERRITE THIN FILM FORMED USING THE SAME - To provide a ferrite thin film-forming composition material that is a composition material for forming a ferrite thin film by using the sol-gel method which can form a thin ferrite thin film having a uniform thickness and, furthermore, has excellent long-term storage stability, a method of forming a ferrite thin film using the above composition material, and a ferrite thin film formed by using the above method. A ferrite thin film-forming composition material is a composition material for forming a NiZn ferrite, CuZn ferrite, or NiCuZn ferrite thin film by using a sol-gel method, in which the composition material is formed by dissolving metallic raw materials in a solvent including acetonitrile, and the fraction of acetonitrile is 30 mass % to 60 mass % with respect to 100 mass % of the composition material. | 2013-10-03 |
20130256583 | Stable Iron Oxide Nanoparticles and Method of Production - A method of preparing a dispersion of stabilized iron oxide nanoparticles that comprise cores and coatings on the cores, which comprise zwitterionic functional groups chemically bound to the cores, using a single solution that comprises dissolved iron ions and a zwitterion silane and/or a hydrolyzed product of the zwitterion silane. | 2013-10-03 |
20130256584 | HEXAGONAL STRONTIUM FERRITE MAGNETIC POWDER AND METHOD OF MANUFACTURING THE SAME, AND MAGNETIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME - An aspect of the present invention relates to a method of manufacturing hexagonal strontium ferrite magnetic powder, which comprises melting a starting material mixture which has a composition, as a composition converted into an oxide, lying within a region enclosed by the following four points:
| 2013-10-03 |
20130256585 | METHOD OF FORMING FERRITE THIN FILM AND FERRITE THIN FILM OBTAINED USING THE SAME - A method of forming a ferrite thin film by carrying out a process for forming a coated film by coating a ferrite thin film-forming composition on a heat-resistant substrate and a process for calcining the coated film once or a plurality of times so that the thickness of the calcined film on the substrate becomes a desired thickness, and firing the calcined film formed on the substrate, in which the conditions for firing the calcined film formed on the substrate are under the atmosphere or an oxygen gas or inert gas atmosphere, a temperature-rise rate of 1° C./minute to 50° C./minute, a holding temperature of 500° C. to 800° C., and a holding time of 30 minutes to 120 minutes. | 2013-10-03 |
20130256586 | REFRIGERATION OIL FROM GAS-TO-LIQUID-DERIVED AND BIO-DERIVED TRIESTERS - The present invention is directed to a refrigerator oil composition comprising
| 2013-10-03 |
20130256587 | THERMAL AND/OR ELECTRICAL CONDUCTIVITY CONTROL IN SUSPENSIONS - Articles, systems, and methods involving the control of thermal and/or electrical conductivity in suspensions are generally described. | 2013-10-03 |
20130256588 | Process for producing fluorinated organic compounds - A process for fluorinating hydrocarbon compounds, which comprises:
| 2013-10-03 |
20130256589 | COMPOSITION FOR DUST CONTROL AND LIMITING MOISTURE RE-ABSORPTION - The invention provides methods and compositions for the reduction of dust in an environment through application to a hard surface in that environment or dispersal of dust into the environment is minimized. The composition allows for instant reduction of dust and for the elimination of the absorption of moisture on surfaces that are prone to this over time. The invention is usable with mined minerals or synthesized materials that are prone to produce dust and absorb moisture during storage and transport so the composition can allow for a safer environment and longer storage of products. | 2013-10-03 |
20130256590 | MICROEMULSIONS AND USES THEREOF IN DISPERSING CATALYSTS - Compositions for converting contaminants or dispersing compounds are described. Systems and methods of using the compositions are also disclosed. | 2013-10-03 |
20130256591 | NEGATIVE ELECTRODE ACTIVE MATERIAL, ELECTRODE CONTAINING THE SAME, AND LITHIUM ION SECONDARY BATTERY HAVING THE ELECTRODE - A negative electrode active material mainly contains silicon and silicon oxide. In the negative electrode active material, an Ar-laser Raman spectrum thereof includes a peak A corresponding to 950±30 cm | 2013-10-03 |
20130256592 | LITHIUM-ION SECONDARY BATTERY - The lithium-ion secondary battery in which a positive electrode contains Li | 2013-10-03 |
20130256593 | Color-Stable Superabsorbent - A superabsorbent obtainable by a process for producing superabsorbents by polymerizing a monomer solution comprising
| 2013-10-03 |
20130256594 | BINAPHTHYL COMPOUND, LIQUID CRYSTAL COMPOSITION, LIQUID CRYSTAL ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE - A binaphthyl compound represented by General Formula (G1) is provided. In General Formula (G1), Ar | 2013-10-03 |
20130256595 | LIQUID CRYSTAL COMPOSITION, LIQUID CRYSTAL ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE - A novel polymerizable monomer is provided. A novel liquid crystal composition which can be used in a variety of liquid crystal devices is provided using the polymerizable monomer. The use of the novel liquid crystal composition makes it possible to reduce driving voltage of a liquid crystal element and to reduce power consumption of a liquid crystal display device. A polymerizable monomer represented by General Formula (G1) is provided. A liquid crystal composition which includes a polymerizable monomer represented by General Formula (H1), a nematic liquid crystal, and a chiral material is also provided. In General Formulae (G1) and (H1), n and m are individually an integer from 1 to 20, and R | 2013-10-03 |
20130256596 | LIQUID-CRYSTALLINE MEDIUM - The invention relates to a liquid-crystalline medium, characterised in that it comprises one or more compounds of the formula IA, | 2013-10-03 |
20130256597 | PHOSPHOR AND METHOD FOR PREPARING SAME - According to one embodiment of the present invention, a phosphor has the following composition formula (1): [composition formula 1] Si | 2013-10-03 |
20130256598 | BISMUTH BORATE GLASS ENCAPSULANT FOR LED PHOSPHORS - Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices. | 2013-10-03 |
20130256599 | CERAMICS COMPOSITE - The present invention relates to a ceramics composite including: a matrix phase including Al | 2013-10-03 |
20130256600 | OXIDE CERAMIC FLUORESCENT MATERIAL HAVING RARE EARTH DIFFUSED THEREIN - An oxide ceramic fluorescent material is provided comprising a polycrystalline ceramic sintered body of Y | 2013-10-03 |
20130256601 | INTEGRATED PROCESS FOR THE GASIFICATION OF WHOLE CRUDE OIL IN A MEMBRANE WALL GASIFIER AND POWER GENERATION - An integrated process for the partial oxidation of whole crude oil mixed with a low cost finely divided solid ash-producing material in a membrane wall gasification reactor produces a syngas and, optionally, a more hydrogen-rich product stream by subjecting the syngas to a water-gas shift reaction. Process steam and electricity are produced by recovering the sensible heat values from the hot syngas. | 2013-10-03 |
20130256602 | MANNICH-BASE INHIBITOR FOR DECALCIFICATION, PREPARATION METHOD AND APPLICATION THEREOF - A mannich-base inhibitor for decalcification, a preparation method and application thereof are provided. The inhibitor comprises 10-80% mannich-base component calculated in the total weight percent of the inhibitor, while the rest is at least one compound selected from imidazoline inhibitor with molecular weight between 110 and 750, and alkynyloxy amine inhibitor. The mannich-base inhibitor component is prepared through mannich reaction with 1 mol organic polyamine containing three or more primary amine bases and/or secondary amine bases, 3-7 mol ketones, and 3-7 mol aldehydes. The inhibitor which can be effectively compounded and cooperated with oil demulsifying agent and oil decalcifying agent, have the advantages of stable property, strong absorbability, high film strength and film density with its inhibition rate exceeding 90%. The inhibitor is especially adapted for inhibiting the steel corrosion caused by the mixed medium of salt, acid and water from the desalination and dehydration apparatus of oil refinery below 160° C. | 2013-10-03 |
20130256603 | LIQUID COMPOSITION FOR DEPOSITION OF ORGANIC ELECTROACTIVE MATERIALS - Compositions are provided for improved liquid deposition of electroactive material onto low surface energy layers. The liquid composition includes at least one organic electroactive material in a liquid medium. The liquid medium includes (a) at least 20% by volume, based on the total volume of the liquid medium, of a first solvent and (b) at least 1% by volume, based on the total volume of the liquid medium, of a liquid organic additive. The liquid medium pins on the underlying layer as determined by a dynamic receding contact angle test. The first solvent retracts on the underlying layer as determined by the dynamic receding contact angle test. | 2013-10-03 |
20130256604 | CONJUGATED POLYMERS - The invention relates to novel polymers containing one or more thieno[3,2-b]thiophene-2,5-dione and/or furo[3,2-b]furan-2,5-dionerepeating units or their thioketone derivatives, monomers and methods for their preparation, their use as semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these polymers. | 2013-10-03 |
20130256605 | COMPOSITES HAVING HIGH LEVELS OF CARBON NANOTUBES AND A PROCESS FOR THEIR PRODUCTION - Composite materials having a multi-wall carbon nanotube content of from 4 to 15% by weight, based on total weight of the composite, are produced from a dispersion of multi-wall carbon nanotubes (MWCNTs) and a fiber reinforcing material in a carrier fluid which is processed to form a shaped article that may then be infused with a liquid polymer or polymer-forming mixture to form the composite. | 2013-10-03 |
20130256606 | CONDUCTIVE POWDER, CONDUCTIVE MATERIAL CONTAINING THE SAME, AND METHOD FOR PRODUCING THE SAME - A conductive powder improving various performances as compared to conventional conductive powders is described. The conductive power includes conductive particles, each of which have a metal or alloy film formed on the surface of a core particle. The conductive particle has thereon protrusions protruding from the surface of the film. Each protrusion includes a particle chain including particles of the metal or alloy linked in a row. It is preferred that the metal or alloy is nickel or a nickel alloy. It is also preferred that the ratio of the total area of the exposed portions of the film to the projection area of the conductive particle is 60% or less. | 2013-10-03 |
20130256607 | TIN OXIDE PARTICLES AND METHOD FOR PRODUCING SAME - A tin oxide particle having a structure characterized by peaks in Raman spectroscopy at at least 37±9 cm | 2013-10-03 |
20130256608 | METAL MATERIAL HAVING n-TYPE THERMOELECTRIC CONVERSION CAPABILITY - The present invention provides a metal material comprising an alloy that is represented by the compositional formula Mn | 2013-10-03 |
20130256609 | Thermoelectric Materials and Methods for Synthesis Thereof - Materials having improved thermoelectric properties are disclosed. In some embodiments, lead telluride/selenide based materials with improved figure of merit and mechanical properties are disclosed. In some embodiments, the lead telluride/selenide based materials of the present disclosure are p-type thermoelectric materials formed by adding sodium (Na), silicon (Si) or both to thallium doped lead telluride materials. In some embodiments, the lead telluride/selenide based materials are formed by doping lead telluride/selenides with potassium. | 2013-10-03 |
20130256610 | VEHICLE SUPPORT ASSEMBLY AND METHOD OF USING SAME - A support assembly includes a frame, a first ratchet, a second ratchet, a lift structure, a bridge member, and a saddle. Each of the first and second ratchets includes a linear rack attached to first and second side members of the frame, and a slide structure slideably mounted with one of the side members. Each slide structure includes a pawl that successively engages with teeth in the linear rack as the lift structure of the support assembly is extended upwardly and as the slide structure slides along the linear rack. The support assembly may be a jack stand that is co-located with a vehicle jack. A head of the vehicle jack pushes against a bottom surface of the bridge member of the jack stand to cause the lift structure to extend upwardly and the ratchet systems to engage in a locked position to hold a vehicle in a raised position. | 2013-10-03 |
20130256611 | SCISSOR LIFT TABLE - The invention provides a scissor lift table having a base unit ( | 2013-10-03 |
20130256612 | Apparatus for Stringing a Line Underneath a Cross Member - A stringing apparatus for stringing a sock-line, optionally a phase line, within a closed framed opening of a power line tower of H-frame, portal or corset type uses a helicopter for pulling the sock-line where the stringing apparatus is suspended from the helicopter by a tow-line and the sock-line is fastened to it. The stringing apparatus comprises an arcuate channel which is attached to the sock-line and a rotating open spoke star-wheel defining legs the ends of which travel inside the channel and allows a continuous revolution of the star wheel thus allowing the closed frame cross member to travel through one of the gaps between the legs while the sock-line passes to the underside of the cross member and the tow line passes over the cross member. | 2013-10-03 |
20130256613 | MOBILE DEVICE CONFIGURED TO TRAVEL ON A TRANSMISSION LINE AND PROVIDE ASSISTANCE - Described embodiments include a system and an apparatus. A described system includes a mobile device configured to travel on a transmission line between two transmission towers of a power transmission system, physically assist installation of a new conductor cable or line between the two transmission towers, and wirelessly communicate with an installation controller. The system includes the installation controller configured to control travel by the mobile device over the transmission line, to control provision of physical assistance by the mobile device, and to wirelessly communicate with the mobile device. | 2013-10-03 |
20130256614 | METHODS & APPARATUSES FOR A SMALL VEHICLE JACK APPARATUS - An apparatus with a wheel engagement mechanism for operation with a jack assembly for engaging and elevating two wheels of a multi-wheeled vehicle relative to the ground is provided. The apparatus includes a base, a support member connected to the base, and a wheel support assembly. The wheel support assembly includes wheel supports connected at the ends of the wheel support assembly that extend outward from the wheel support assembly for supporting two wheels of the vehicle. The apparatus also includes an actuation mechanism for selectively raising and selectively lowering the wheel support assembly to raise and lower the vehicle. | 2013-10-03 |
20130256615 | MAGNETIC Z-DIRECTIONAL CLUTCH - Systems and methods are described for providing a magnetic clutch to limit Z-directional motion of a mass (e.g., a carriage for transporting a robotic mechanism in context of a storage library). According to embodiments, the mass is suspended by cabling, and its Z-directional movement is controlled by a Z-drive assembly. The Z-drive assembly includes a drive gear made of a magnetic or conductive material, and the drive gear is in magnetic communication with a biasing magnet. Embodiments configured the biasing magnet with a particular magnetic moment and a position relative to the drive gear, so that the spinning of the drive gear induces magnetic currents that tend to counteract the motion of the gear. For example, in the event of power loss to the Z-drive assembly, magnetic clutching is used to limit or prevent motion of the mass under the force of gravity. | 2013-10-03 |
20130256616 | TOOL FOR HANDLING A SEWER COVER - The tool for handling a cover, in particular covers for sewers or vents, or for manholes, relates to the covers of sewers or vents or manholes, having a substantially planar top surface. The tool includes a holder defining a surface for engaging with the top surface of a cover, a lifting fulcrum, and a handle. The handle has one end spaced apart from the lifting fulcrum. The holder, fulcrum and handle are arranged such that a force exerted by an operator on the one end is transmitted as a force on the holder by the lifting fulcrum. The holder includes a leg connected to the handle and is rigidly configured such that, in the position for lifting a cover, the assembly formed of the cover- and the holder with the leg is rigid. The invention further relates to a method for removing or re-placing such a cover. | 2013-10-03 |
20130256617 | Anchor Cable Release Mechanism for a Guardrail System - A highway guardrail terminal having horizontally extending guardrail elements mounted on a plurality of vertical posts. An anchor cable release mechanism having a cable release bracket attached to a W-beam rail element by cable release bolts has an arrangement of tapered slots and elongated openings to quickly release the cable release bracket from the W-beam rail element upon end-on vehicular impact to the terminal. The tapered slots have a geometry which lifts the bracket away from and out of a parallel alignment with the W-beam rail element. | 2013-10-03 |
20130256618 | FENCING PANEL - Described is a fencing panel comprising a first rail having a plurality of first openings in a first side to receive elongate members. A longitudinal channel is provided along a second side of the first rail, the second side being perpendicular to the first side. A plurality of second openings are provided within the longitudinal channel, each of the second openings corresponding to one of the first openings. Wedge members are inserted into each of the second openings such that the wedge members engage with the first rail and the elongate member inserted into the corresponding first opening such that the elongate member is secured to the first rail. A side cover plate is securable across the longitudinal channel. | 2013-10-03 |
20130256619 | LINE START/END POST OR CORNER POST FOR A FENCE - A line start/end post or corner post ( | 2013-10-03 |
20130256620 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - An improved semiconductor device results from the use of an amorphous silicon layer in a gate structure disposed between a dielectric layer and an upper conductive layer such as a control gate. Both a semiconductor device and method of manufacturing a semiconductor device using an amorphous silicon layer are provided. | 2013-10-03 |
20130256621 | PHASE-CHANGE MEMORY DEVICES - A phase-change memory device includes a diode, a plug, a doping layer pattern, a phase-change layer pattern and an upper electrode. The diode is disposed on a substrate. The plug is disposed on the diode and has a bottom surface whose area is equal to the area of a top surface of the diode. The plug is formed of metal or a conductive metallic compound. The doping layer pattern is disposed on the plug and has a bottom surface whose area is equal to the area of a top surface of the plug, and includes the same metal or conductive metallic compound as the plug. The phase-change layer pattern is disposed on the doping layer pattern. The upper electrode is disposed on the phase-change layer pattern. | 2013-10-03 |
20130256622 | STORAGE DEVICE AND STORAGE UNIT - A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements selected from the group of Groups 4, 5, and 6 elements of the Periodic Table. | 2013-10-03 |
20130256623 | NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME - The present invention provides a nonvolatile memory element, in a nonvolatile memory element having a variable resistance layer possessing a stacked structure, in which the variable resistance layer has a high resistance change ratio, and a method of manufacturing the same. The nonvolatile memory element according to one embodiment of the present invention includes a first electrode, a second electrode, and a variable resistance layer which is interposed between the first electrode and second electrode and in which the resistance value changes into at least two different resistance states. The variable resistance layer possesses a stacked structure having a first metal oxide layer containing Hf and O, and a second metal oxide layer that is provided between the first metal oxide layer and at least one of the first electrode and the second electrode and contains Al and O. | 2013-10-03 |
20130256624 | ELECTRODES FOR RESISTANCE CHANGE MEMORY DEVICES - Embodiments of the present disclosure describe techniques and configurations for increasing thermal insulation in a resistance change memory device, also known as a phase change memory (PCM) device. In one embodiment, an apparatus includes a storage structure of a PCM device, the storage structure having a chalcogenide material, an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure, and a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface. Other embodiments may be described and/or claimed. | 2013-10-03 |
20130256625 | VARIABLE RESISTANCE MEMORY DEVICE - A variable resistance memory device includes: a pair of first electrodes and a second electrode interposed between the pair of first electrodes; a first variable resistance material layer interposed between one of the first electrodes and the second electrode; and a second variable resistance material layer interposed between the other of the first electrodes and the second electrode, wherein the pair of first electrodes are electrically connected to each other, and a first set voltage and a first reset voltage of the first variable resistance material layer are different from a second set voltage and a second reset voltage of the second variable resistance material layer, respectively. | 2013-10-03 |
20130256626 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array. | 2013-10-03 |
20130256627 | Sensors Incorporating Freestanding Carbon NanoStructures - Sensors for detecting IR radiation, UV radiation, X-Rays, light, gas, and chemicals. The sensors herein incorporate freestanding carbon nanostructures, such as single-walled carbon nanotubes (“SWCNT”), atomically thin carbon sheets having a thickness of about between 1 atom and about 5 atoms (“graphene”), and combinations thereof. The freestanding carbon nanostructures are suspended above a substrate by a plurality of conductors, each conductor electrically connected to the carbon nanostructure. In one method of manufacture, a resonance chamber is formed under the carbon nanostructure by etching of the substrate, yielding a sensor wherein the resonance chamber is bounded by at least the substrate and the carbon nanostructure. | 2013-10-03 |
20130256628 | EPITAXIAL STRUCTURE - An epitaxial structure is provided. The epitaxial structure comprises a substrate, a carbon nanotube layer and an epitaxial layer stacked in that order. The substrate has an epitaxial growth surface and defines a plurality of first grooves and first bulges on the epitaxial growth surface. The carbon nanotube layer covers the epitaxial growth surface, wherein a first part of the carbon nanotube layer is attached on top surface of the first bulges, and a second part of the carbon nanotube layer is attached on bottom surface and side surface of the first grooves. The epitaxial layer is formed on the epitaxial growth surface, and the carbon nanotube layer is sandwiched between the epitaxial layer and the substrate. | 2013-10-03 |
20130256629 | GRAPHENE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, ORGANIC LIGHT EMITTING DISPLAY, AND MEMORY INCLUDING GRAPHENE SEMICONDUCTOR DEVICE - Graphene semiconductor device, a method of manufacturing a graphene semiconductor device, an organic light emitting display and a memory, include forming a multilayered member including a sacrificial substrate, a sacrificial layer, and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate, combining the first laminate and the second laminate such that the semiconductor layer contacts the graphene layer, and removing the transfer substrate. | 2013-10-03 |
20130256630 | NEAR UV LIGHT EMITTING DEVICE - Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of | 2013-10-03 |
20130256631 | ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION - Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs. | 2013-10-03 |
20130256632 | GROWTH SUBSTRATE AND LIGHT EMITTING DEVICE - Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing portions of the silicon substrate, a second buffer layer covering the first buffer layer and the exposed portions of the silicon substrate, wherein the second buffer layer is formed of a material causing a eutectic reaction with the silicon substrate, a third buffer layer disposed on the second buffer layer, and a light emitting structure disposed on the third buffer layer, and the second buffer layer includes voids. | 2013-10-03 |
20130256633 | SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL WITH INSULATOR COATING - Lighting apparatus including a light emitting diode and a plurality of semiconductor structures. Each semiconductor structure includes a quantum dot comprising a nanocrystalline core comprising a first semiconductor material and a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core, the quantum dot having a photoluminescence quantum yield (PLQY) of at least 90%. An insulator layer encapsulates the quantum dot. | 2013-10-03 |
20130256634 | ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME - An organic light-emitting device includes a first electrode, a second electrode facing the first electrode, a phosphorescent emission layer between the first electrode and the second electrode, and an electron transport layer between the phosphorescent emission layer and the second electrode. The phosphorescent emission layer includes a compound represented by one of Formulae 1a to 1c, and the electron transport layer includes a metal-containing compound and a compound represented by Formula 2. | 2013-10-03 |
20130256635 | ILLUMINATION DEVICE - An illumination device includes a light-emitting element, a wire connected to the light-emitting element to supply electric power to the light-emitting element, and a light-transmitting resin configured to hold the light-emitting element and the wire in one piece. The light-transmitting resin defines an appearance of the illumination device. Light emitted from the light-emitting element is transmitted through the light-transmitting resin to be radiated from an outer surface of the light-transmitting resin. | 2013-10-03 |
20130256636 | FUNCTION LAYER INK, METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC APPARATUS - A function layer ink used for forming a function layer by a liquid coating process contains a function layer material containing a macromolecular material or a low-molecular-weight material, and a mixed solvent containing solvent A and solvent B. Solvent A has a viscosity in the range of 0.01 to 0.05 Pa·s, and solvent B has a viscosity of less than 0.01 Pa·s and a lower boiling point than solvent A. The mixed solvent has a viscosity of less than 0.02 Pa·s and a boiling point in the range of 200 to 350° C., and contains 0.1% to 10% by weight of solvent A. | 2013-10-03 |
20130256637 | Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Appliance, and Lighting Device - Provided is a light-emitting element with a small degree of luminance degradation with accumulation of driving time (a long-lifetime light-emitting element). Provided is a light-emitting element in which a light-emitting layer with an electron-transport property is formed with a plurality of layers containing different host materials. Further, the LUMO level of a host material on an anode side is higher than the LUMO level of a host material on a cathode side. With such a structure, it is possible to provide a long-lifetime light-emitting element with little degradation in luminance with accumulation of driving time. | 2013-10-03 |
20130256638 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME, METHOD OF REPAIRING DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A display device includes light emitting elements that are arranged in a two-dimensional matrix, in which the light emitting elements include a drive circuit which is provided on a substrate, a first insulating layer which covers the drive circuit and the substrate, a light emitting portion in which a first electrode, an organic layer having a light emitting layer, and a second electrode are laminated, and a second insulating layer which covers the first electrode. | 2013-10-03 |
20130256639 | LIGHT EMITTING ELEMENT AND DISPLAY APPARATUS - There is provided a light emitting element including a first electrode, an organic layer having a light emitting layer, formed on the first electrode, a charge generation layer formed on the organic layer, a resistance layer formed on the charge generation layer, and a second electrode formed on the resistance layer. The first electrode reflects light emitted from the light emitting layer and the second electrode transmits the light emitted from the light emitting layer. The charge generation layer includes a layered structure of, sequentially in order from the organic layer, a mixing layer containing a chelate material, and an alkali earth metal element or an alkali metal element, and an acceptor layer containing an acceptor material. | 2013-10-03 |
20130256640 | ASSEMBLY AND ELECTRONIC DEVICES INCLUDING THE SAME - An assembly includes a dielectric layer in contact with a semiconductor layer. The dielectric layer includes a cross-linked polymeric material having isocyanurate groups, wherein the dielectric layer is free of zirconium oxide particles. The semiconductor layer includes a non-polymeric organic semiconductor material, and is substantially free of electrically insulating polymer. Electronic components and devices including the assembly are also disclosed. | 2013-10-03 |
20130256641 | BENZIMIDAZOLE COMPOUND, ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME, AND DISPLAY ELEMENT INCLUDING THE SAME - A benzimidazole compound, an organic photoelectric device, and a display element, the benzimidazole compound being represented by the following Chemical Formula 1: | 2013-10-03 |
20130256642 | ORGANIC LIGHT-EMITTING DIODE LUMINAIRES - There is provided an organic light-emitting diode luminaire. The luminaire includes a patterned first electrode, a second electrode, and a light-emitting layer therebetween. The light-emitting layer includes a first plurality of pixels having an emission color that is blue; a second plurality of pixels having an emission color that is green, the second plurality of pixels being laterally spaced from the first plurality of pixels; and a third plurality of pixels having an emission color that is red-orange, the third plurality of pixels being laterally spaced from the first and second pluralities of pixels. The additive mixing of all the emitted colors results in an overall emission of white light. | 2013-10-03 |
20130256643 | METHODS FOR FORMING BANKS AND ORGANIC THIN FILM TRANSISTORS COMPRISING SUCH BANKS - Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments. | 2013-10-03 |
20130256644 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME AND DISPLAY INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device, the compound being represented by the following Chemical Formula 1: | 2013-10-03 |
20130256645 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME, AND DISPLAY DEVICE INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode are disclosed, the compound being represented by the following Chemical Formula 1: | 2013-10-03 |
20130256646 | ELECTRONIC DEVICE INCLUDING A PYRIMIDINE COMPOUND - There is provided a compound having Formula I or Formula II | 2013-10-03 |
20130256647 | NOVEL ORGANIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING SAME - Aspects of the present invention can provide a novel phenanthrothiadiazole compound with the lowest excited triplet level T1 that is high, the phenanthrothiadiazole compound being capable of forming a stable amorphous film. Furthermore, aspects of the present invention can provide an organic light-emitting device having high luminous efficiency and a low driving voltage. | 2013-10-03 |
20130256648 | ORGANIC EL DISPLAY PANEL AND METHOD FOR MANUFACTURING SAME - The present invention provides an organic EL display panel, which has excellent display qualities with no luminance unevenness and emission color unevenness. The present invention provides the organic EL display panel, which has: a TFT panel having an effective light emitting region (L), which is positioned at a center portion, and a dummy region (D), which is positioned at an outer circumferential portion so as to surround the effective light emitting region (L); a plurality of light emitting elements, which are disposed in the effective light emitting region (L); and a plurality of non-light emitting elements, which are disposed in the dummy region (D). A non-light emitting element among the non-light emitting elements, said non-light emitting element being adjacent to the effective light emitting region (L), also has a dummy hole that is provided in the TFT panel. | 2013-10-03 |
20130256649 | ELECTRICALLY-CONDUCTIVE STRUCTURE AND A PRODUCTION METHOD THEREFOR - The present invention provides a new compound which may significantly improve the service life, efficiency, electrochemical stability, and thermal stability of an organic light emitting device, and an organic light emitting device which comprises an organic material layer comprising the compound. | 2013-10-03 |
20130256650 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits. | 2013-10-03 |
20130256651 | THIN FILM TRANSISTOR - A thin film transistor includes a substrate and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region. A source electrode and a drain electrode are formed on the source region and the drain region respectively. A gate insulating layer is formed between a gate electrode and the channel region. The thin film transistor further includes a nitride conductive layer formed between the drain electrode and the drain region, and between the source electrode and source region. The nitride conductive layer has a carrier concentration higher than that of the active layer, thereby reducing contacting resistances between the drain electrode and the drain region and between the source electrode and source region. | 2013-10-03 |
20130256652 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned. | 2013-10-03 |
20130256653 | THIN FILM TRANSISTOR HAVING PLURAL SEMICONDUCTIVE OXIDES, THIN FILM TRANSISTOR ARRAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - A plural semiconductive oxides TFT (sos-TFT) provides improved electrical functionality in terms of charge-carrier mobility and/or threshold voltage variability. The sos-TFT may be used to form a thin film transistor array panel for display devices. An example sos-TFT includes: an insulated gate electrode; a first semiconductive oxide layer having a composition including a first semiconductive oxide; and a second semiconductive oxide layer having a different composition that also includes a semiconductive oxide. The first and second semiconductive oxide layers have respective channel regions that are capacitively influenced by a control voltage applied to the gate electrode. In one embodiment, the second semiconductive oxide layer includes at least one additional element that is not included in the first semiconductive oxide layer where the additional element is one of gallium (Ga), silicon (Si), niobium (Nb), hafnium (Hf), and germanium (Ge). | 2013-10-03 |
20130256654 | Method of Forming P-Type ZnO Film - Disclosed herein is a method of forming a p-type zinc oxide thin film. A zinc oxide layer and an antimony oxide layer are alternately stacked one above another on a substrate, forming a superlattice layer. The superlattice layer is modified into a p-type zinc oxide thin film by annealing. Upon annealing, zinc atoms of the zinc oxide layer are diffused into the antimony oxide layer and antimony atoms of the antimony oxide layer are diffused into the zinc oxide layer. | 2013-10-03 |
20130256655 | ACTIVE DEVICE - An active device is disposed on a substrate. The active device includes a metal layer, a semiconductor channel layer, an insulating layer, a source and a drain. The metal layer has a metal oxide surface away from the substrate. The insulating layer is disposed between the metal layer and the semiconductor channel layer. The source and the drain are disposed at one side of the semiconductor channel layer. A portion of the semiconductor channel layer is exposed between the source and the drain. An orthogonal projection of the metal layer on the substrate at least covers an orthogonal projection of the portion of the semiconductor channel layer exposed by the source and the drain on the substrate. | 2013-10-03 |
20130256656 | TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - To increase the on-state current of a transistor whose channel is formed in an oxide semiconductor layer. To provide a transistor where a resistance-reducing element is introduced into a region of an oxide semiconductor layer which overlaps with part of a source or drain or part of a gate. For example, the thickness of a region of a conductive layer serving as a source or drain or a gate (at least part of a region overlapping with an oxide semiconductor layer) is made smaller than that of the other region of the conductive layer. A resistance-reducing element is introduced into the oxide semiconductor layer through the conductive layer thinned partly, thereby obtaining the oxide semiconductor layer where the resistance-reducing element is introduced into the region overlapping with part of the source or drain or part of the gate. Thus, the on-state current of the transistor can be increased. | 2013-10-03 |
20130256657 | SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor. | 2013-10-03 |
20130256658 | SEMICONDUCTOR MEMORY DEVICE - In a matrix including a plurality of memory cells, each in which a drain of a writing transistor is connected to a gate of a reading transistor and the drain is connected to one electrode of a capacitor, a gate of the writing transistor is connected to a writing word line, a source of the writing transistor and a source of the reading transistor is connected to a bit line, and a drain of the reading transistor is connected to a reading word line. A conductivity type of the writing transistor is different from a conductivity type of the reading transistor. In order to increase the integration degree, a bias line may be substituted with a reading word line in another row, or memory cells are connected in series so as to have a NAND structure, and a reading word line and a writing word line may be shared. | 2013-10-03 |
20130256659 | REDUCTION OF OCD MEASUREMENT NOISE BY WAY OF METAL VIA SLOTS - The present disclosure provides a semiconductor device. The semiconductor device includes a substrate and an interconnect structure disposed over the substrate. The interconnect structure includes a plurality of interconnect layers. One of the interconnect layers contains: a plurality of metal via slots and a bulk metal component disposed over the plurality of metal via slots. The present disclosure also provides a method. The method includes providing a wafer, and forming a first layer over the wafer. The method includes forming an interconnect structure over the first layer. The forming the interconnect structure includes forming a second interconnect layer over the first layer, and forming a third interconnect layer over the second interconnect layer. The second interconnect layer is formed to contain a plurality of metal via slots and a bulk metal component formed over the plurality of metal via slots. The third interconnect layer contains one or more metal trenches. | 2013-10-03 |
20130256660 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment has: a semiconductor substrate; an acoustic resonator formed on the semiconductor substrate, having a semiconductor layer including impurity electrically isolated from the substrate by depletion layer and configured to resonate at a predetermined resonance frequency based on acoustic standing wave excited in the semiconductor layer; a temperature detector formed on the semiconductor substrate and configured to detect temperature of the semiconductor substrate; a calculating unit formed on the semiconductor substrate and configured to perform calculation of temperature compensation based on the temperature detected by the temperature detector, kind of the impurity and concentration of the impurity; and a controller formed on the semiconductor substrate and configured to control the resonance frequency based on a result of the calculation by the calculating unit. | 2013-10-03 |
20130256661 | SYSTEM FOR ELECTRICAL TESTING OF THROUGH-SILICON VIAS (TSVs), AND CORRESPONDING MANUFACTURING PROCESS - An embodiment of a process for manufacturing a system for electrical testing of a through via extending in a vertical direction through a substrate of semiconductor material envisages integrating an electrical testing circuit in the body to enable detection of at least one electrical parameter of the through via through a microelectronic buried structure defining an electrical path between electrical-connection elements towards the outside and a buried end of the through via; the integration step envisages providing a trench and forming a doped buried region at the bottom of the trench, having a doping opposite to that of the substrate so as to form a semiconductor junction, defining the electrical path when it is forward biased; in particular, the semiconductor junction has a junction area smaller than the area of a surface of the conductive region in a horizontal plane transverse to the vertical direction, in such a way as to have a reduced reverse saturation current. | 2013-10-03 |
20130256662 | SINGLE-PIECE PHOTOVOLTAIC STRUCTURE - A material is manufactured from a single piece of semiconductor material. The semiconductor material can be an n-type semiconductor. Such a manufactured material may have a top layer with a crystalline structure, transitioning into a transition layer, further transitioning into an intermediate layer, and further transitioning to the bulk substrate layer. The orientation of the crystalline pores of the crystalline structure align in layers of the material. The transition layer or intermediate layer includes a material that is substantially equivalent to intrinsic semiconductor. Also described is a method for manufacturing a material from a single piece of semiconductor material by exposing a top surface to an energy source until the transformation of the top surface occurs, while the bulk of the material remains unaltered. The material may exhibit photovoltaic properties. | 2013-10-03 |
20130256663 | SURFACE TENSION MODIFICATION USING SILANE WITH HYDROPHOBIC FUNCTIONAL GROUP FOR THIN FILM DEPOSITION - A semiconductor structure that includes crystalline surfaces and amorphous hydrophilic surfaces is provided. The hydrophilic surfaces are treated with silane that includes a hydrophobic functional group, converting the hydrophilic surfaces to hydrophobic surfaces. Chemical vapor deposition or other suitable deposition methods are used to simultaneously deposit a material on both surfaces and due to the surface treatment, the deposited material exhibits superior adherence qualities on both surfaces. In one embodiment, the structure is an opening formed in a semiconductor substrate and bounded by at least one portion of a crystalline silicon surface and at least one portion of an amorphous silicon oxide structure. | 2013-10-03 |