38th week of 2008 patent applcation highlights part 45 |
Patent application number | Title | Published |
20080227171 | Process For Producing Lactoperoxidase - A process for producing lactoperoxidase, including: a step (1) for bringing one or more milk materials into contact with a cation exchanger having weakly acidic groups as ion exchange groups to thereby effect adsorption treatment; a step (2) for washing the cation exchanger after the adsorption treatment; a step (3) for bringing the cation exchanger after the washing into contact with a leaching solvent to thereby obtain a leaching solution having lactoperoxidase eluted into the leaching solvent; a step (4) for concentrating the leaching solution through an ultrafiltration membrane to thereby effect precipitation in the concentrated leaching solution; and a step (5) for obtaining a lactoperoxidase solution by removing the precipitation from the concentrated leaching solution. | 2008-09-18 |
20080227172 | SIALYLTRANSFERASE AND DNA ENCODING THE SAME - A sialyltransferase having the following physico-chemical properties:
| 2008-09-18 |
20080227173 | Polypeptide - The invention describes a PS4 variant polypeptide derivable from a parent polypeptide having amylase activity selected from the group consisting of: (a) a polypeptide comprising an amino acid mutation at each of positions 33, 34, 121, 134, 141, 146, 157, 161, 178, 179, 223, 229, 272, 303, 307, 309 and 334; (b) a polypeptide comprising an amino acid mutation at each of positions 33, 34, 121, 134, 141, 145, 146, 157, 178, 179, 223, 229, 272, 303, 307 and 334; (c) a polypeptide comprising an amino acid mutation at each of positions 33, 34, 121, 134, 141, 146, 157, 178, 179, 223, 229, 272, 303, 307, 309 and 334; and (d) a polypeptide comprising an amino acid mutation at each of positions 3, 33, 34, 70, 121, 134, 141, 146, 157, 178, 179, 223, 229, 272, 303, 307, 309 and 334; with reference to the position numbering of a | 2008-09-18 |
20080227174 | Starch Debranching Enzymes - The invention relates to a genetically engineered variant of a parent starch debranching enzyme, i.e. a pullulanase or an isamylase, the enzyme variant having an improved thermostability at a pH in the range of 4-6 compared to the parent enzyme and/or an increased activity towards amylopectin and/or glycogen compared to the parent enzyme, to methods for producing such starch debranching enzyme variants with improved thermostability and/or altered substrate specificity, and to a method for converting starch to one or more sugars using at least one such enzyme variant. | 2008-09-18 |
20080227175 | Protease Crystals in Broth - A method of solubilizing protease crystals and/or protease precipitate in a fermentation broth comprising | 2008-09-18 |
20080227176 | HIGHLY EFFICIENT GAS PERMEABLE DEVICES AND METHODS FOR CULTURING CELLS - This invention relates to methods and devices that improve cell culture efficiency. They include the use of gas permeable culture compartments that reduce the use of space while maintaining uniform culture conditions, and are more suitable for automated liquid handling. They include the integration of gas permeable materials into the traditional multiple shelf format to resolve the problem of non-uniform culture conditions. They include culture devices that use surfaces comprised of gas permeable, plasma charged silicone and can integrate traditional attachment surfaces, such as those comprised of traditional tissue culture treated polystyrene. They include culture devices that integrate gas permeable, liquid permeable membranes. A variety of benefits accrue, including more optimal culture conditions during scale up and more efficient use of inventory space, incubator space, and disposal space. Furthermore, labor and contamination risk are reduced. | 2008-09-18 |
20080227177 | Process for Culturing Bacteria of the Family Streptococcaceae - This invention relates to an improved process for culturing bacteria of the family Streptococcaceae (such as of the genus lactococcus), a medium for culturing the bacteria, and the obtained bacteria cells. | 2008-09-18 |
20080227178 | POLYPEPTIDE FACTOR FROM A THERMOPHILIC EUBACTERIAL SPECIES AND USE THEREOF IN THE PRODUCTION OF FUNCTIONAL, HETEROLOGOUS PROTEINS IN AN EXPRESSION HOST - A polypeptide factor derived from the thermophilic eubacterial species | 2008-09-18 |
20080227179 | New Bioremediation Enhancing Agents And Methods Of Use - A new and improved method for treating contaminated water or other contaminated media has been developed. Bioremediation enhancing agents (BEAs) such as yeast metabolites (YM) and other yeast derived products are used to facilitate microbial treatment of the contaminated material. Polysaccharides are also an effective BEA when used alone or in combination with the yeast derived products. The BEAs may work with microbes and electron donors to improve the rate of contaminant degradation and to increase the efficiency of electron donor utilization. A number of novel electron donors are also disclosed. | 2008-09-18 |
20080227180 | ORGANIC WASTE MANAGEMENT SYSTEM - A method of managing organic waste and an organic waste management system. The method includes the steps of receiving organic waste liquids and solids in a collection vessel, such as a grease trap. The dissolved oxygen is monitored, the pH level is monitored, the flow is monitored, and the temperature of the organic waste liquids and solids in the collection vessel are all monitored and data is generated therefrom. Enzymes and bacteria are generated/supplied and delivered along with other reagents to the collection vessel in response to the data. In addition, dissolved oxygen, air, or equivalent is applied to the collection vessel in response to the data so that the organic waste liquids and solids are degraded. | 2008-09-18 |
20080227181 | SYSTEM AND PROCESS FOR TREATING WASTE GAS EMPLOYING BIO-TREATMENT TECHNOLOGY - A waste gas treatment process using biological treatment technology including filtering waste gas to be treated, and introducing the filtered waste gas into a biological treatment system periodically and switchably from two ends of the system. | 2008-09-18 |
20080227182 | SYSTEMS AND METHODS FOR ENZYMATIC HYDROLYSIS OF LIGNOCELLULOSIC MATERIALS - Systems and methods for enzymatic hydrolysis of lignocellulosic materials are provided. A system for enzymatic hydrolysis of lignocellulosic materials generally includes a reactor vessel configured to contain a mixture of lignocellulosic stock and enzymes. The reactor vessel includes a first agitator for mixing in the reactor vessel. The system further includes a recycle loop coupled to the reactor vessel for recycling the mixture from and returning to the reactor vessel and a second agitator for mixing in the recycle loop. | 2008-09-18 |
20080227183 | APPARATUS FOR SUPPORTING DIAGNOSIS OF CANCER - A cancer diagnosis supporting apparatus is provided with a memory for storing a predetermined reference value, a diagnosis support information preparer for preparing the diagnosis support information of cancer by comparing a measurement value obtained from a malignant tumor collected from a cancer patient and the reference value, and a change acceptor for accepting change of the reference value and for storing the changed reference value in the memory. | 2008-09-18 |
20080227184 | METHOD, APPARATUS AND SYSTEM FOR QUANTIFYING THE CONTENT OF GENETICALLY MODIFIED MATERIAL IN A SAMPLE - A method including providing an initial test sample including a primary material and a relatively smaller amount of at least one adventitious material; combining the initial test sample with a standard addition of at least one adventitious material to form a final test sample, wherein the standard addition has a known amount of genetically modified adventitious material; and analyzing the final test sample to determine the % GMO of the primary material and the % GMO of the adventitious material. | 2008-09-18 |
20080227185 | Diagnostic System for Carrying Out a Nucleic Acid Sequence Amplification and Detection Process - An integrated lab-on-a-chip diagnostic system for carrying out a sample preparation process on a fluid sample containing cells and/or particles, the system comprising: (a) an inlet for a fluid sample; (b) a lysis unit for lysis of cells and/or particles contained in the fluid sample; (c) a nucleic acid extraction unit for extraction of nucleic acids from the cells and/or particles contained in the fluid sample; (d) a reservoir containing a lysis fluid; (e) a reservoir containing an eluent for removing nucleic acids collected in the nucleic acid extraction unit; wherein the sample inlet is in fluid communication with the lysis unit, an optional valve being present to control the flow of fluid therebetween; wherein the lysis unit is in fluid communication with the nucleic acid extraction unit, an optional valve being present to control the flow of fluid therebetween; wherein the reservoir containing the lysis fluid is in fluid communication with the lysis unit, an optional valve being present to control the flow of fluid therebetween; and wherein the reservoir containing the eluent is in fluid communication with the nucleic acid extraction unit, an optional valve being present to control the flow of fluid therebetween. | 2008-09-18 |
20080227186 | Active, micro-well thermal control subsystem - Devices and systems for active thermal control of sample holding devices for bDNA testing, polymerase chain reaction testing, chemiluminescent immuno-assay testing, and so forth. The thermal control subsystem includes a fluidic circuit, first and second heater assemblies, a centrifugal pump, and a heat exchange device. The first and second heater assemblies include a heat removal device and a controllable thermo-electric device. One or both of the heater assemblies can include a heat spreader. A controller actively controls the pump, the heat removal device, and the thermo-electric devices, to thermally-control sample-containing vessels retained in the holding device. | 2008-09-18 |
20080227187 | Cellular physiology workstations for automated data acquisition and perfusion control - Cellular physiology workstations for automated data acquisition and perfusion control are described. The cellular physiology workstation may be used for physiological and electrophysiological experiments. Methods for employing such cellular physiology workstations in physiological and electrophysiological experiments are also disclosed. The cellular physiology workstations comprise one or more recording chambers each for holding one or more cells to be measured. One or more cells are place in each recording chamber. Perfusions means, such as an automatic perfusion system is connected to the recording chamber to perfuse the cells with a plurality of solutions containing different concentration of one or more agents to be tested. Biosensors, such as patch clamps, electrodes, or microscopes are positioned to detect a response from the cell. The cellular physiology workstation may optionally comprise injecting means for introducing an injection solution into the cell before and during analysis. | 2008-09-18 |
20080227188 | Biosensor with Optically Matched Substrate - The matching of refractive index of a nanoporous membrane with an analyte solution used with the membrane for use in a sensor is described. Scattering of the excitation and/or emitted light is reduced by matching the refractive indices. This improves efficiency when the porous translucent membrane is used in flow-through or flow-over sensors such as biosensors. | 2008-09-18 |
20080227189 | Device for Pressurized Perfusion Especially for Culturing and/or Treating Cells - The invention relates to a device for pumping a fluid into a bioreactor. Polsatile pumping is made possible by valve arrangement so that growth of the cells in the bioreactor is increased. Pumping function can be achieved though several mechanisms. A piston can be displaced in a cylinder, especially by an electromagnet, wherein a permanent magnet or likewise an electromagnet can be arranged in the piston. The piston can also be displaced by compressed air. An elastic, hollow body can also be provided, wherein said hollow body can be deformed by mechanical electromagnetic forces so that pumping function is achieved by a change in volume. The pumping device can also be used as implant for assisting or replacing heart function. | 2008-09-18 |
20080227190 | Cell Expansion Apparatus with Plate Bioreactor - A disposable apparatus for cell expansion, having at least one bioreactor. The bioreactor has a cellular growth area and a supply area, the cellular growth area being adjacent a plate and separated from said supply area by a membrane. The bioreactor comprises a plurality of plates. The plates have a roughened surface or a corrugated surface. At least a sheet of membrane separates adjacent plates. Two sheets between adjacent plates may be separated by a mesh. | 2008-09-18 |
20080227191 | CELL CULTURE VESSEL AND CELL CULTURE APPARATUS - A vessel and an apparatus for culturing cells are provided in which a temperature difference is effected so that any position in the vessel can be brought into a temperature at which cells can be attached and a temperature at which cells cannot be attached, thereby freely selecting and recovering cells. | 2008-09-18 |
20080227192 | Nematode ATP Synthase Subunit E-Like Sequences - Nucleic acid molecules from nematodes encoding ATP synthase subunit E polypeptides are described. ATP synthase subunit E-like polypeptide sequences are also provided, as are vectors, host cells, and recombinant methods for production of ATP synthase subunit E-like nucleotides and polypeptides. Also described are screening methods for identifying inhibitors and/or activators, as well as methods for antibody production. | 2008-09-18 |
20080227193 | Nematode Fatty Acid Desaturase-Like Sequences - Nucleic acid molecules from nematodes encoding fatty acid desaturase polypeptides are described. Fatty acid desaturase-like polypeptide sequences are also provided, as are vectors, host cells, and recombinant methods for production of fatty acid desaturase-like nucleotides and polypeptides. Also described are screening methods for identifying inhibitors and/or activators of fatty acid desaturase-like polypeptides, as well as methods for antibody production. | 2008-09-18 |
20080227194 | Canine pancreatic lipase - Isolated nucleic acid molecules having a nucleotide sequence encoding canine pancreatic lipase polypeptides, allelic variants and fragments thereof. Vectors and host cells containing the polynucleotide sequences and methods for expressing the polypeptides. Monoclonal antibodies that specifically binds to the canine pancreatic lipase polypeptides. Cell lines secreting the monoclonal antibodies. Methods for determining the presence or amount of canine pancreatic lipase in a biological sample. The methods include using the monoclonal antibodies to specifically bind to canine pancreatic lipase polypeptides. The method includes using standards of recombinant canine pancreatic lipase. Devices and kits for performing methods for detecting canine pancreatic lipase in biological samples. | 2008-09-18 |
20080227195 | Expanding the eukaryotic genetic code - This invention provides compositions and methods for producing translational components that expand the number of genetically encoded amino acids in eukaryotic cells. The components include orthogonal tRNAs, orthogonal aminoacyl-tRNA synthetases, orthogonal pairs of tRNAs/synthetases and unnatural amino acids. Proteins and methods of producing proteins with unnatural amino acids in eukaryotic cells are also provided. | 2008-09-18 |
20080227196 | Antibody Composition-Producing Cell - The present invention relates to a cell for the production of an antibody molecule such as an antibody useful for various diseases having high antibody-dependent cell-mediated cytotoxic activity, a fragment of the antibody and a fusion protein having the Fc region of the antibody or the like, a method for producing an antibody composition using the cell, the antibody composition and use thereof. | 2008-09-18 |
20080227197 | ALLOGENEIC STEM CELL BANK - This invention provides methods for supplying a therapy for individuals exposed to radiation following a nuclear event, through the prospective establishment of an undesignated allogeneic stem cell bank with prospective HLA typing of healthy potential recipients. | 2008-09-18 |
20080227198 | IMMUNOREGULATORY ANTIBODIES AND USES THEREOF - A combination antibody therapy for treating B cell malignancies using an immunoregulatory antibody, especially an anti-B7, anti-CD23, or anti-CD40L antibody and a B cell depleting antibody, especially anti-CD19, anti-CD20, anti-CD22 or anti-CD37 antibody is provided. Preferably, the combination therapy will comprise anti-B7 and anti-CD20 antibody administration. | 2008-09-18 |
20080227199 | Method for simultaneous production of multiple proteins; vectors and cells for use therein - Described is the production of proteins in a host cell. More specifically, described are methods for improving expression of two or more proteins in a cell or host cell. The methods are suited for production of, for example, recombinant antibodies that can be used in pharmaceutical preparations or as diagnostic tools. In one embodiment, provided is a method for obtaining a cell that expresses two or more proteins comprising providing the cell with two or more protein expression units encoding two or more proteins, characterized in that at least two of the protein expression units comprise at least one STAR sequence. | 2008-09-18 |
20080227200 | Polypeptide having an activity to support proliferation or survival of hematopoietic stem cell and hematopoietic progenitor cell, and DNA coding for the same - A gene encoding a polypeptide having an activity to support proliferation or survival of hematopoietic stem cells or hematopoietic progenitor cells is isolated by comparing expressed genes between cells which support proliferation or survival of hematopoietic stem cells or hematopoietic progenitor cells and cells which do not support the proliferation or survival. Proliferation or survival of hematopoietic stem cells or hematopoietic progenitor cells is supported by using stromal cells in which the isolated gene is expressed or a gene product of the isolated gene. | 2008-09-18 |
20080227201 | In vitro model for neuronal death - This invention demonstrates the formation of a novel polarized membrane lipid raft signaling module in neurons, in response to several diverse neurotoxic stimuli. This polarization occurs well before neurons commit to die, and is an early mechanism in death signaling. The formation of this signaling module is dependent on cholesterol for its formation and provides a mechanistic explanation for the protective effects of cholesterol depleting drugs in several non-neural models of cell death. As such, the formation of the signaling module lends itself as a novel screen for the identification of new drugs and therapeutics which would retard its formation and protect against neuronal injury and death. | 2008-09-18 |
20080227202 | Method of promoting differentiation of one or more human stem cells into human coronary endothelial cells on a synthetic tubular structure - A method of promoting differentiation of one or more human stem cells into human coronary endothelial cells on at least one surface of a synthetic tubular structure to be used to make a human hybrid hemodialysis access graft is provided. The method includes arranging a plurality of human stem cells on the synthetic tubular structure to yield a hybrid stem cell/synthetic tubular structure and subjecting ex vivo, the hybrid stem cell/synthetic tubular structure to three dimensional dynamic conditions effective to promote differentiation of the one or more human stem cells into human coronary endothelial cells on the at least one surface. | 2008-09-18 |
20080227203 | CELL CULTURE SUPPORT AND MANUFACTURE THEREOF - An object of the present invention is to provide a cell culture support making the detachment of a cell sheet easy as well as enabling the formation of a uniform cell sheet. The present invention relates to a method for manufacturing a cell culture support having a temperature responsive polymer immobilized onto the surface thereof via covalent bonding, the method including a coating step in which a composition including a monomer that can form the polymer by polymerization by radiation irradiation, an organic solvent and, in some cases, a prepolymer formed by polymerization of the monomer is coated onto the substrate having a surface containing a material which can be covalently bonded to the temperature responsive polymer by radiation irradiation to form a film on the surface of the substrate, a radiation irradiation step in which a polymerization reaction and a binding reaction between the substrate surface and the temperature responsive polymer are allowed to proceed by irradiating radiation to the film, and a drying step to dry the film. | 2008-09-18 |
20080227204 | PROCESS FOR PRODUCING CYTOTOXIC LYMPHOCYTE - The present invention relates to a method for preparing a cytotoxic lymphocyte characterized in that the method comprises the step of carrying out at least one of induction, maintenance and expansion of a cytotoxic lymphocyte in the presence of fibronectin, a fragment thereof or a mixture thereof. | 2008-09-18 |
20080227205 | Incorporation on Non-Naturally Encoded Amino Acids Into Proteins - The invention provides methods and compositions for in vivo incorporation of non-naturally encoded amino acids into polypeptides by | 2008-09-18 |
20080227206 | METHOD AND SYSTEM FOR DETERMINATION OF MOLECULAR INTERACTION PARAMETERS - A method of determining kinetic parameters for a reversible molecular interaction between a ligand immobilized to a solid support surface and a binding partner to the ligand in solution, comprises sequentially, without intermediate regeneration or renewal of the immobilized ligand, flowing a plurality of fluid volumes containing different known concentrations of the binding partner over the solid support surface, monitoring the momentary amount of binding partner bound to the solid support surface related to time and solution concentration of binding partner and collecting the binding data, and determining the kinetic parameters by globally fitting a predetermined kinetic model for the interaction between the binding partner and the immobilized ligand to the collected binding data, which model allows for mass transport limitation at the solid support surface. An analytical system for carrying out the method, a computer program, a computer program product and a computer system for performing the method are also disclosed. | 2008-09-18 |
20080227207 | AUTOMATED COLORIMETRIC POLYSACCHARIDE ASSAYS - A method of automated determination of saccharide concentration is provided herein. The method includes preparing one or more saccharide standards and one or more diluted polysaccharide test samples, transferring a portion of the one or more saccharide standards and the one or more diluted polysaccharide test samples along with a diluent to a series of wells in a multiwell plate, transferring a portion of an acid reagent to the series of wells in the multiwell plate, mixing the contents of the series of wells in the multiwell plate, heating and cooling the contents of the series of wells in the multiwell plate, shaking the multiwell plate, and measuring the radiant energy absorbance of the contents of the series of wells in the multiwell plate, where all steps are performed in the absence of human intervention. | 2008-09-18 |
20080227208 | Devices and Methods for Detection of Occult Blood - The present invention relates to devices and methods for the detection of occult blood in a test sample. These devices and methods can detect the presence of one or more of the following components of occult blood: hemoglobin, transferrin, hemoglobin-haptoglobin complex, and albumin. Methods for the detection of occult blood in a test sample include the following steps: exposing said test sample to two or more of the following antibodies: anti-hemoglobin antibodies, anti-hemoglobin-haptoglobin-complex antibodies, anti-transferrin antibodies, and anti-albumin antibodies or one or more of the following antibodies: anti-hemoglobin-haptoglobin-complex antibodies, anti-transferrin antibodies, and anti-albumin antibodies; determining the level of reactions between the antibodies and their corresponding components of occult blood that may be in the test sample; and deciding on the presence of occult blood. The devices of this invention can have two or more of test areas containing two or more of the following antibodies: anti-hemoglobin antibodies, anti-transferrin antibodies, anti-hemoglobin-haptoglobin complex antibodies, and anti-albumin antibodies or one or more of test areas containing one or more of the following antibodies: anti-transferrin antibodies, anti-hemoglobin-haptoglobin complex antibodies, and, anti-albumin antibodies. The devices and methods of this invention are simple and produce rapid responses. | 2008-09-18 |
20080227209 | Methods, Kits And Devices For Analysis Of Lipoprotein(a) - Methods for optically detecting lipoproteins, in particular lipoprotein(a), in a sample. In some embodiments, the methods include contacting a sample with an associative lipophilic dye, subjecting the sample to electrophoretic separation through a separation medium, and detecting the dye. Kits comprising microchips for performing a separation of lipoproteins, including lipoprotein(a), are also provided. | 2008-09-18 |
20080227210 | Home test for glycated albumin in saliva - A home test for measuring glycated albumin levels in saliva. The saliva sample is collected at home using a standardized saliva collection kit and mailed to a testing laboratory that performs the test and reports the result directly back to the customer via the internet. The home test can be used to monitor glucose control in diabetics and in healthy individuals. It may also be used as a diagnostic aid in identifying individuals with diabetes, or who are at risk of developing diabetes. | 2008-09-18 |
20080227211 | COMPOSITIONS AND METHODS FOR FREE-SOLUTION CONJUGATE NUCLEIC ACID ANALYSIS - The present invention provides compositions and methods for performing free-solution conjugate analysis of nucleic acid molecules. For example, the present invention provides multiplexed single-base extension assays for genotyping. In particular, the present invention provides a series of disperse polyamide “drag tags” for use in achieving high-resolution separation of nucleic acid reaction products. | 2008-09-18 |
20080227212 | PROCESS FOR IDENTIFYING EXISTENCE OF SINGLE NUCLEOTIDE POLYMORPHISM WITHOUT DNA SEQUENCING - A process for detecting the presence of a mutation in an oligonucleotide strand such as a DNA strand from a gene without the need for DNA sequencing is provided. The inventive process provides a rapid pre-test to screen for the presence or absence of a mutation in a target gene of a subject to determine whether laborious sequencing protocols are required to further characterize a mutation. The inventive process provides a rapid screening protocol for identifying and detecting a genetic mutation in a patient who presents with a disease | 2008-09-18 |
20080227213 | RNA targeting compounds and methods for making and using same - Disclosed are RNA targeting compounds having the formula: | 2008-09-18 |
20080227214 | Method for the Hydrocyanation of 1,3-Butadiene - A process is described for preparing 3-pentenenitrile by hydrocyanating 1,3-butadiene in the presence of at least one catalyst, wherein unhydrocyanated 1,3-butadiene is removed from the effluent of the hydrocyanation and recycled into the process, and the recycled 1,3-butadiene is monitored for the content of hydrogen cyanide. | 2008-09-18 |
20080227215 | Method and arrangement of measuring acidity for other chemical or physical property of a gas - A method and an arrangement of measuring acidity or other chemical or physical property of a gas. The invention comprises a membrane having optical indicator molecules bound to a microporous matrix arranged to be placed into contact with the gas to be measured, the optical indicator molecules changing their colour in response to the acidity or other chemical or physical property of the gas, a light source, and a detector. The light source is arranged to emit and direct light to the membrane, the light being transmitted through the membrane, whereby a part of the light is absorbed into the optical indicator molecules, and the rest of the light emitted is guided to the detector, where it is measured. | 2008-09-18 |
20080227216 | LIQUID TESTER - A liquid testing device for determining the value of at least one property of a liquid. The liquid testing device includes a planar base and at least one test section, located on the planar base, with a reference color section located adjacent to the test section, which exhibits a color according to the value, as a result of reaction of a reagent with the liquid. The reference color section includes a plurality of different reference colors arranged for easy visual color comparison with the test result. The reference color section is placed adjacent to and in contact with the test section, with the test section having sufficient length so that it substantially encompasses the entire reference color section with its plurality of different reference colors. Thus, when the test section exhibits a reaction color, the visual comparison is simplified since the reference color which matches the reaction color becomes substantially visually merged and self-aligned therewith. | 2008-09-18 |
20080227217 | SAMPLE-LIQUID ANALYSIS DISC AND METHOD FOR ANALYZING SAMPLE MIXTURE LIQUID - A reaction of a sample mixture liquid is detected accurately, by allowing a solid reagent to be dissolved and reacted in a liquid sample quickly and accurately. A disc main body, and at least one sample mixing unit provided at the disc main body are provided, and the sample mixing unit is provided with: a liquid sample reserve unit; a reagent chamber capable of disposing a plurality of the solid reagents; and a measurement chamber to which a sample mixture liquid containing a liquid sample and a solid reagent mixed in the reagent chamber is supplied. The reagent chamber has a form which allows a plurality of the solid reagents to be disposed in the direction substantially parallel to the radial direction of the disc in which centrifugal force is generated, or in the direction substantially perpendicular to the radial direction of the disc. | 2008-09-18 |
20080227218 | TARGET SUBSTANCE DETECTION METHOD AND TARGET SUBSTANCE DETECTION KIT - A target substance detection method for detecting a target substance in a specimen, comprises the steps of contacting with a specimen a target substance detecting element comprised of a base, a metal structure and a first capturing body for capturing a target substance; contacting with the target substance detecting element a labeling material comprised of a labeling substance and a second capturing body for capturing a target substance; and acquiring an absorption spectrum (A) of the target substance detecting element contacted with the specimen and the labeling material, wherein the employed labeling substance is a substance that a slope of a tangent of an absorption spectrum (C) of the labeling substance at a peak wavelength (λ | 2008-09-18 |
20080227219 | Electrochemiluminescent assay - Disclosed herein are compositions that may be used in an assay, such as an immunoassay, for detecting and/or quantifying at least one analyte of interest, such as an antigen. Also disclosed are control/calibrator compositions and methods for preparing control/calibrator compositions that may be used in assays, such as immunoassays, methods for detecting and/or quantifying an analyte with the compositions, and kits containing the compositions. | 2008-09-18 |
20080227220 | Lateral Flow Binding Assay - Provided is a test device, a test method and a test kit for the detection of the presence or absence of an analyte in a fluid sample, based on a device comprising a backing with a first end (A) and a second end (B) and consecutively going from first end (A) to second end (B): (a) a sample receiving section attached to one side of the backing; (b) an analyte detection section attached to said one side of the backing comprising a capture site; (c) an absorption section attached to said one side of the backing; (d) a reaction section; wherein the sample receiving section is in fluid contact with the analyte detection section, which is in fluid contact with the absorption section and wherein there is no fluid contact between the reaction section and any of the other sections. | 2008-09-18 |
20080227221 | Fluorescence Polarization-Based Homogeneous Assay For Aflatoxins - A homogeneous assay for determining the aflatoxin content in agricultural products uses the technique of fluorescence polarization. A solvent is used to extract aflatoxins from a sample of the agricultural product. A mixture is prepared by combining the extract with a tracer and with a monoclonal antibody specific for aflatoxin. The tracer is able to bind to the monoclonal antibody to produce a detectable change in fluorescence polarization. The tracer is prepared by conjugating an aflatoxin oxime to a suitable fluorophore. The fluorescence polarization of the mixture is measured. The aflatoxin concentration of the mixture may be calculated using a standard curve obtained by measuring the fluorescence polarization of a series of aflatoxin solutions of known concentration. | 2008-09-18 |
20080227222 | Method for the detection of target molecules by fluorescence polarization using peptide mimics - The inventive subject matter relates to a method of measuring non-protein hydrophobic and protein target antigens by competitive fluorescence polarization using peptide mimics as competitors. The peptide mimics used in the inventive method contain conformational epitopes not represented in the linear sequence. The method can be used in the detection of a wide range of agents including steroids, hormones, nucleic acids, proteins and infectious organisms. A method for the detection of cortisol and gamma-interferon is also contemplated in the method. Samples suitable for analysis by the inventive method include environmental samples and bodily fluids including serum and oral fluids including saliva. | 2008-09-18 |
20080227223 | ACTIVE MATRIX SUBSTRATE AND REPAIRING METHOD THEREOF - An active matrix substrate including a substrate, a plurality of pixel units, a plurality of driving lines, an electron static discharge (ESD) protection circuit and a floating line is provided. The substrate has an active region and a peripheral region connected with the active region. The pixel units are arranged in a matrix in the active region. The driving lines electrically connected to the pixels are disposed in the active region and the peripheral region. The ESD protection circuit and the floating line are disposed in the peripheral region of the substrate. The ESD protection circuit is electrically connected to the driving lines. The ESD protection circuit includes an outer short ring (OSR) and an inner short ring (ISR) disposed between the pixel units and the OSR. The floating line is located beside the outer driving line. | 2008-09-18 |
20080227224 | Method of manufacturing semiconductor device and control system - When a multi-layer structure is formed by forming the interconnect trenches or via holes having different patterns in a plurality of insulating films, an anti-reflective film and an upper resist film are stacked in this order over an insulating interlayer, and the anti-reflective film is etched through the upper resist film used as a mask, wherein the anti-reflective film is etched while varying a value of at least one etching condition correlative to Δ(L | 2008-09-18 |
20080227225 | Method and apparatus for manufacturing a semiconductor device - The present invention relates to a method of manufacturing a semiconductor device wherein etching is performed on films on a wafer using a plasma treatment apparatus. In the manufacturing method according to the present invention, a change in the difference between the emission intensities of a first wavelength component and a second wavelength component in plasma is monitored during etching. If the amount of change in the difference per unit time exceeds a predetermined threshold a given number of times in a row, then the flow rate of oxygen introduced to the plasma treatment apparatus is increased or, if the amount of change exceeding the predetermined threshold has not been seen, then the oxygen flow rate is set back to the original value thereof. This series of actions is repeated all the time during a set period of time. | 2008-09-18 |
20080227226 | Semiconductor substrate, manufacturing method of a semiconductor device and testing method of a semiconductor device - A semiconductor substrate eliminates a restriction caused by a width of scribe lines so as to increase a number of semiconductor elements formed on the semiconductor substrate. A plurality of semiconductor element areas are formed by forming a plurality of unit exposed and printed areas, each of which contains the semiconductor element areas. A first scribe line extends between the semiconductor element areas formed within the unit exposed and printed area. A second scribe line extends between the unit exposed and printed areas. A width of the first scribe line is different from a width of the second scribe line. | 2008-09-18 |
20080227227 | DYNAMIC TEMPERATURE BACKSIDE GAS CONTROL FOR IMPROVED WITHIN-SUBSTRATE PROCESS UNIFORMITY - A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities. | 2008-09-18 |
20080227228 | Measurement of Overlay Offset in Semiconductor Processing - A method of semiconductor manufacturing including forming an overlay offset measurement target including a first feature on a first layer and a second feature on a second layer. The first feature and the second feature have a first predetermined overlay offset. The target is irradiated. The reflectivity of the irradiated target is determined. An overlay offset for the first layer and the second layer is calculated using the determined reflectivity. | 2008-09-18 |
20080227229 | METHOD OF FABRICATION MEMS INTEGRATED CIRCUITS - A method of fabricating a plurality of MEMS integrated circuits from a wafer having a MEMS layer formed on a frontside thereof and a polymer coating over said MEMS layer, said polymer coating having a plurality of frontside dicing streets defined therethrough, said method comprising the steps of:
| 2008-09-18 |
20080227230 | Quantum dot vertical cavity surface emitting laser and fabrication method of the same - A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL. | 2008-09-18 |
20080227231 | THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A manufacturing method and the structure of a thin film transistor liquid crystal display (TFT-LCD) are disclosed. The TFT-LCD uses metal electrodes as a mask to thoroughly remove the unwanted semiconductor layer during the etching process for forming the source and drain electrodes. This manufacturing method can reduce the problems caused by the unwanted semiconductor layer, hence improving the quality of the TFT. | 2008-09-18 |
20080227232 | Method for manufacturing display device - An object is to provide a display device that can be manufactured by improvement of use efficiency of a material and simplification of a manufacturing process. A light absorbing layer is formed, an insulating layer is formed over the light absorbing layer, the light absorbing layer and the insulating layer are selectively irradiated with laser light, an irradiated region in the insulating layer is removed to form an opening in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light absorbing layer. The conductive film is formed in the opening so as to be in contact with the light absorbing layer, which is exposed, so that the light absorbing layer and the conductive layer can be electrically connected with the insulating layer interposed therebetween. | 2008-09-18 |
20080227233 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing a semiconductor optical device includes forming a BDR (Band Discontinuity Reduction) layer of a first conductivity type doped with an impurity, depositing a contact layer of the first conductivity type in contact with the BDR layer after forming the BDR layer, the contact layer being doped with the same impurity as the BDR layer and used to form an electrode, and heat treating after forming the contact layer. | 2008-09-18 |
20080227234 | Method of manufacturing a semiconductor device - A semiconductor device is manufactured in a silicon-on-insulator (SOI) wafer having an silicon active layer, a buried oxide layer, and a supporting substrate layer. Before the wafer is diced into chips along scribe lines, the silicon active layer is selectively etched to form trenches surrounding the scribe lines. The wafer is then diced using a dicing apparatus having a blade width smaller than the width of the trenches. The dicing blade accordingly does not make contact with the silicon active layer, which is particularly vulnerable to chipping. | 2008-09-18 |
20080227235 | Sensor Component And Method For Producing A Sensor Component - A device for detecting a measured quantity has a sensor chip for detecting the measured quantity, a supply for providing a power supply, and an injection-molded enclosure for accommodating the sensor chip and the supply, the injection-molded enclosure including integrated conductive traces providing an electrical connection between the sensor chip and the supply. | 2008-09-18 |
20080227236 | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays - This invention comprises manufacture of photovoltaic cells by deposition of thin film photovoltaic junctions on metal foil substrates. The photovoltaic junctions may be heat treated if appropriate following deposition in a continuous fashion without deterioration of the metal support structure. In a separate operation, an interconnection substrate structure is provided, optionally in a continuous fashion. Multiple photovoltaic cells are then laminated to the interconnection substrate structure and conductive joining methods are employed to complete the array. In this way the interconnection substrate structure can be uniquely formulated from polymer-based materials employing optimal processing unique to polymeric materials. Furthermore, the photovoltaic junction and its metal foil support can be produced in bulk without the need to use the expensive and intricate material removal operations currently taught in the art to achieve series interconnections. | 2008-09-18 |
20080227237 | Method of assembling chips - A method of assembling chips. A first chip and a second chip are provided. At least one conductive pillar is formed on the first chip, and a conductive connecting material is formed on the conductive pillar. The second chip also comprises at least one conductive pillar. The first chip is connected to the second chip via the conductive pillars and the conductive connecting material. | 2008-09-18 |
20080227238 | INTEGRATED CIRCUIT PACKAGE SYSTEM EMPLOYING MULTI-PACKAGE MODULE TECHNIQUES - An integrated circuit package system that includes: providing a first package including a first package first device and a first package second device both adjacent a first package substrate; and mounting and electrically interconnecting a second package over an electrical interconnect array formed on a substrate of the first package second device. | 2008-09-18 |
20080227239 | SEMICONDUCTOR-CHIP EXFOLIATING DEVICE AND SEMICONDUCTOR-DEVICE MANUFACTURING METHOD - A semiconductor-chip exfoliating device for exfoliating a semiconductor chip | 2008-09-18 |
20080227240 | Method of Making Reliable Wafer Level Chip Scale Package Semiconductor Devices
- The present invention relates to a method of making a robust wafer level chip scale package and, in particular, a method that prevents cracking of the passivation layer during solder flow and subsequent multiple thermal reflow steps. In one embodiment, a passivation layer that is formed using a highly compressive insulating material is used. In another aspect, another layer is applied over the passivation layer to assist with preventing cracking of the passivation layer. | 2008-09-18 |
20080227241 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device fabrication method for forming on a wafer-bonded substrate p- and n-type FinFETs each having a channel plane exhibiting high carrier mobility is disclosed. First, prepare two semiconductor wafers. Each wafer has a surface of {100} crystalline orientation and a <110> direction. These wafers are surface-bonded together so that the <110>directions of upper and lower wafers cross each other at a rotation angle, thereby providing a “hybrid” crystal-oriented substrate. On this substrate, form semiconductor regions, one of which is identical in <110> direction to the upper wafer, and the other of which is equal in <110> direction to the lower wafer. In the one region, form a pFinFET having {100} channel plane. In the other region, form an nFinFET having its channel direction in parallel or perpendicular to that of the pFinFET. A CMOS FinFET structure is thus obtained. | 2008-09-18 |
20080227242 | PIXEL STRUCTURE OF A THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY - A pixel structure of a thin film transistor liquid crystal display employs a design of three metal layers and includes an organic insulating layer between a data signal line and a common electrode for reducing a parasitic capacitance, while a passivation layer included between the common electrode and a pixel electrode acts as a storage capacitor required for the pixels, so as to achieve a high aperture ratio, and the common electrode can act as a shielding bar for enhancing the display contrast. | 2008-09-18 |
20080227243 | METHOD OF FABRICATING THIN FILM TRANSISTOR AND ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SAME - According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper. | 2008-09-18 |
20080227244 | METHOD OF FABRICATING ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE - A method of fabricating an array substrate for a liquid crystal display device comprises forming a gate line, a data line that crosses the gate line and a thin film transistor connected to the gate line and the data line on a substrate, and forming an organic insulating material layer on the gate line, the data line and the thin film transistor. The organic insulating material layer has photo curability, flexibility and dynamic stability. The method further comprises forming a passivation layer that has a drain contact hole from the organic insulating material layer by using a stamp that has a convex portion. The drain contact hole exposes a drain electrode of the thin film transistor. The method also comprises forming a pixel electrode on the passivation layer. The pixel electrode is connected to the drain electrode through the drain contact hole. | 2008-09-18 |
20080227245 | THIN FILM TRANSISTOR ARRAY PANEL AND A METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire are made of Ag alloy containing Ag and an additive including at least one selected from Zn, In, Sn and Cr. | 2008-09-18 |
20080227246 | Method of sulfuration treatment for a strained InAlAs/InGaAs metamorphic high electron mobility transistor - This invention relates to a method of sulfuration treatment for InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), and the sulfuration treatment is applied to the InAlAs/InGaAs MHEMT for a passivation treatment for Gate, in order to increase initial voltage, lower the surface states and decrease surface leakage current, which makes the MHEMT work in a range of high current density and high input power. | 2008-09-18 |
20080227247 | BARRIER DIELECTRIC STACK FOR SEAM PROTECTION - The present invention provides a semiconducting device including a gate dielectric atop a semiconducting substrate, the semiconducting substrate containing source and drain regions adjacent the gate dielectric; a gate conductor atop the gate dielectric; a conformal dielectric passivation stack positioned on at least the gate conductor sidewalls, the conformal dielectric passivation stack comprising a plurality of conformal dielectric layers, wherein no electrical path extends entirely through the stack; and a contact to the source and drain regions, wherein the discontinuous seam through the conformal dielectric passivation stack substantially eliminates shorting between the contact and the gate conductor. The present invention also provides a method for forming the above-described semiconducting device. | 2008-09-18 |
20080227248 | CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A CMOS image sensor and a manufacturing method are disclosed. The gates of the transistors are formed in the active region of the unit pixel, and a diffusion region for the photo diode is defined by an ion implantation of impurities to the semiconductor substrate. The patterns of the photoresist that are the masking layer against ion implantation are formed on the semiconductor substrate in such a manner that they have the boundary portion of the isolation layer so as not to make the boundary of the defined photo diode contact with the boundary of the isolation layer. Damages by an ion implantation of impurities at the boundary portion between the diffusion region for the photo diode and the isolation layer are prevented, which reduces dark current of the COMS image sensor. | 2008-09-18 |
20080227249 | CMOS Image Sensor White Pixel Performance - Methods and systems for forming a photodiode in a substrate, forming a source/drain region in the substrate and extending over at least a portion of the photodiode, and growing a thermal oxide layer over the photodiode by performing a rapid thermal anneal (RTA) process utilizing an oxidizing environment. | 2008-09-18 |
20080227250 | CMOS device with dual-EPI channels and self-aligned contacts - A CMOS device having dual-epi channels comprises a first epitaxial region formed on a substrate, a PMOS device formed on the first epitaxial region, a second epitaxial region formed on the substrate, wherein the second epitaxial region is formed from a different material than the first epitaxial region, an NMOS device formed on the second epitaxial region, and electrical contacts coupled to the PMOS and NMOS devices, wherein the electrical contacts are self-aligned. | 2008-09-18 |
20080227251 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR MANUFACTURING THE SAME - Formation of an WN | 2008-09-18 |
20080227252 | FABRICATION METHODS OF THIN FILM TRANSISTOR SUBSTRATES - Methods for manufacturing thin film transistor arrays utilizing three steps of lithography and one step of laser ablation while the lithography procedure is used four to five times in conventional processes are disclosed. The use of the disclosed methods assists in improving throughput and saving of manufacturing cost. | 2008-09-18 |
20080227253 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device which includes a first gate wiring layer and a second gate wiring layer adjacent to each other; a first diffused layer provided on a side between the wiring layers; a second diffused layer provided on one side external to the side between the wiring layers; and a third diffused layer provided on the other side external to the side between the wiring layers, the method including: forming a first mask including an opening; implanting a channel impurity for threshold voltage control using the first mask; forming a first diffused layer using the first mask by implanting a first impurity; forming a first gate wiring layer and a second gate wiring layer after removing the first mask; and forming a second diffused layer and a third diffused layer using the first gate wiring layer and the second gate wiring layer as a second mask by implanting a second impurity. | 2008-09-18 |
20080227254 | ELECTRONIC DEVICE INCLUDING CHANNEL REGIONS LYING AT DIFFERENT ELEVATIONS AND PROCESSES OF FORMING THE SAME - An electronic device including a nonvolatile memory cell can include a substrate including a first portion and a second portion, wherein a first major surface within the first portion lies at an elevation lower than a second major surface within the second portion. The electronic device can also include a charge storage stack overlying the first portion, wherein the charge storage stack includes discontinuous storage elements. The electronic device can further include a control gate electrode overlying the first portion, and a select gate electrode overlying the second portion, wherein the select gate electrode includes a sidewall spacer. In a particular embodiment, a process can be used to form the charge storage stack and control gate electrode. A semiconductor layer can be formed after the charge storage stack and control gate electrode are formed to achieve the substrate with different major surfaces at different elevations. The select gate electrode can be formed over the semiconductor layer. | 2008-09-18 |
20080227255 | Methods of Forming Vertical Transistors - A vertical transistor forming method includes forming a first pillar above a first source/drain and between second and third pillars, providing a first recess between the first and second pillars and a wider second recess between the first and third pillars, forming a gate insulator over the first pillar, forming a front gate and back gate over opposing sidewalls of the first pillar by depositing a gate conductor material within the first and second recesses and etching the gate conductor material to substantially fill the first recess, forming the back gate, and only partially fill the second recess, forming the front gate, forming a second source/drain elevationally above the first source/drain, and providing a transistor channel in the first pillar. The channel is operationally associated with the first and second sources/drains and with the front and back gates to form a vertical transistor configured to exhibit a floating body effect. | 2008-09-18 |
20080227256 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A MOS type SiC semiconductor device having high reliability and a longer lifespan against TDDB of a gate oxide film is disclosed. The semiconductor device includes a MOS (metal-oxide-semiconductor) structure having a silicon carbide (SiC) substrate, a polycrystalline Si gate electrode, a gate oxide film interposed between the SiC substrate and the polycrystalline Si gate electrode and formed by thermally oxidizing a surface of the SiC substrate, and an ohmic contact electrically contacted with the SiC substrate. The semiconductor device further includes a polycrystalline Si thermally-oxidized film formed by oxidizing a surface of the polycrystalline Si gate electrode. The gate oxide film has a thickness of 20 nm or less, preferably 15 nm or less. | 2008-09-18 |
20080227257 | METHODS FOR FORMING SEMICONDUCTOR DEVICES - A method for forming a semiconductor device comprises providing a substrate. A N type region and a non-N type region are formed in the substrate. The substrate is wet etched to form a protruding portion in the N type region and a concave portion in the non-N type region. A gate structure is formed in the concave portion and insulating spacers are formed on sidewalls of the protruding portion. | 2008-09-18 |
20080227258 | Methods of forming a semiconductor device - Methods of forming a semiconductor device include forming a mask layer on a semiconductor substrate. The mask layer has vertically and horizontally extending portions. The vertically extending portions have a thickness selected to provide a desired line width to an underlying structure to be formed using the mask layer and a height greater than a height of the horizontally extending portions. The underlying structure is formed using the mask layer. | 2008-09-18 |
20080227259 | SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs - A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device. | 2008-09-18 |
20080227260 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH THIN GATE SPACER - A method for fabricating a transistor. A substrate having a gate electrode thereon and insulated therefrom is provided. A first gate spacer with a first dielectric material is formed on the sidewalls of the gate electrode. A liner with a second dielectric material is formed on the upper surfaces of the substrate, the first gate spacer and the gate electrode, wherein the first dielectric material has an etching selectivity relative to the second dielectric material. Ion implantation is performed on the substrate to form source/drain regions in the substrate and substantially self-aligned with the liner on the first gate spacer. The liner is removed from the upper surfaces of the gate electrode and the source/drain regions. A method for fabricating a semiconductor device is also disclosed. | 2008-09-18 |
20080227261 | METHOD FOR FABRICATING A TRANSISTOR STRUCTURE - The invention relates to a method for fabricating a transistor structure, comprising at least a first and a second bipolar transistor having different collector widths. | 2008-09-18 |
20080227262 | Vertically base-connected bipolar transistor - Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the present disclosure are formed with a CMOS fabrication technique that decreases the transistor size while maintaining the high performance characteristics of a bipolar transistor. | 2008-09-18 |
20080227263 | Semiconductor device and method for fabricating the same - A semiconductor device of the present invention includes a plurality of lower electrodes covering the entire surfaces of a plurality of trenches formed in a first interlayer insulating film, a capacitive insulating film covering the entire surfaces of the plurality of lower electrodes, and an upper electrode covering the surfaces of the plurality of lower electrodes from above with the capacitive insulating film interposed between the upper electrode and the plurality of lower electrodes. The upper electrode is formed with a stress-relieving part, such as a crack, a notch or a recess. | 2008-09-18 |
20080227264 | VERTICAL NANOTUBE SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING THE SAME - Vertical device structures incorporating at least one nanotube and methods for fabricating such device structures by chemical vapor deposition. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad and encased in a coating of a dielectric material. Vertical field effect transistors may be fashioned by forming a gate electrode about the encased nanotubes such that the encased nanotubes extend vertically through the thickness of the gate electrode. Capacitors may be fashioned in which the encased nanotubes and the corresponding catalyst pad bearing the encased nanotubes forms one capacitor plate. | 2008-09-18 |
20080227265 | Methods for Fabricating Semiconductor Devices - Methods of fabricating a gate-insulating layer of a dual-gate semiconductor device are disclosed. A disclosed method comprises sequentially forming a buffer oxide layer and a nitride layer on a semiconductor substrate having at least one high voltage device area and at least one low voltage device area; forming at least one trench by selectively removing at least one portion of the buffer oxide layer, the nitride layer and the semiconductor substrate; forming at least one device isolation layer by depositing an oxide layer in the trench and planarizing the oxide layer; removing the nitride layer and the buffer oxide layer remaining on the high voltage device area; forming a first gate-insulating layer on the high voltage device area; removing the nitride layer and the buffer oxide layer remaining on the low voltage device area; and forming a second gate-insulating layer on the low voltage device area. | 2008-09-18 |
20080227266 | Method of STI corner rounding using nitridation and high temperature thermal processing - One embodiment of the present invention relates to a method of forming an isolation structure with rounded corners in a semiconductor substrate, comprising forming an isolation trench within the semiconductor substrate, performing an oxidation blocking nitridation process on exposed surfaces of the trench, performing corner rounding by oxidizing the exposed surfaces after the oxidation blocking nitridation process, and filling the trench with a dielectric material. | 2008-09-18 |
20080227267 | Stop mechanism for trench reshaping process - An opening, such as a trench, on a semiconductor substrate is annealed to smooth edges and corners of the opening. The anneal causes reflow of the material forming the walls of the opening, thereby smoothing out the edges and corners of the opening. After a desired amount of reflow is accomplished, the substrate is exposed to an oxidant such as O | 2008-09-18 |
20080227268 | METHOD OF FORMING AN ISOLATION LAYER IN A SEMICONDUCTOR MEMORY DEVICE - A method of forming an isolation layer in a semiconductor memory device is disclosed. After a trench is formed in a semiconductor substrate, a plasma nitrification annealing process is performed before and preferably after a wall oxide layer is formed to prevent trap charges and degradation problems at the interface and sidewalls of a tunnel insulating layer due to PSZ stress induced in a subsequent process. Accordingly, a variation in the ISPP step can be prevented. | 2008-09-18 |
20080227269 | Termination trench structure for mosgated device and process for its manufacture - A process for the fabrication of a MOSgated device that includes a plurality of spaced trenches in the termination region thereof. | 2008-09-18 |
20080227270 | LOW TEMPERATURE FUSION BONDING WITH HIGH SURFACE ENERGY USING A WET CHEMICAL TREATMENT - Described is a wet chemical surface treatment involving NH | 2008-09-18 |