38th week of 2008 patent applcation highlights part 14 |
Patent application number | Title | Published |
20080224065 | System and Method for Eluting Radioisotope to a Container Disposed Outside of a Radioisotope Generator Assembly - The invention, in one characterization, may be said to be directed to a radiopharmaceutical system that may be utilized in radioisotope elution procedures. In some embodiments, the system may include a radioisotope generator assembly having a radiation shield with a receptacle and a cover disposed over the receptacle. The system may also include a radioisotope generator disposed in the receptacle below the cover. Some embodiments of the system may include an eluate extraction mechanism having an eluate conduit fluidly coupled to a hollow output needle of the radioisotope generator, and a radiation shielded housing disposed outside the radiation shield. The eluate extraction mechanism also may include a hollow needle fluidly coupled to the eluate conduit opposite the radioisotope generator, wherein the hollow needle is disposed inside the radiation shielded housing. | 2008-09-18 |
20080224066 | Modular, High Volume, High Pressure Liquid Disinfection Using Uv Radiation - A device for exposure of a fluid to radiation comprising a tube ( | 2008-09-18 |
20080224067 | Laser forensic detection method and apparatus - A method for detecting traces of material on a surface for forensic evidence gathering is disclosed. The surface is periodically illuminated with laser radiation. Pairs of images of the surface are recorded with one image in each pair recorded while the surface is illuminated and the other being recorded while the surface is not being illuminated. The images in each pair are subtracted and a video signal is generated from the subtracted images. The video signal can be displayed on a display device or recorded for later display and examination. | 2008-09-18 |
20080224068 | LIGHT ILLUMINATING ELEMENT - A light illuminating element including a transparent closed casing, an exciting gas, a first exciting coating, and a first dielectric multi-layer long-pass filter is provided. The transparent closed casing has a first inner side, a second inner side, a first outer side corresponding to the first inner side, and a second outer side corresponding to the second inner side. The exciting gas is disposed inside the transparent closed casing, and suitable for providing an ultraviolet light. The first exciting coating is disposed on the first inner side or the first outer side, and is suitable for absorbing the ultraviolet light to provide a visible light. The first dielectric multi-layer long-pass filter is disposed on the second inner side or the second outer side, and suitable for reflecting the ultraviolet light and allowing the visible light to pass through. | 2008-09-18 |
20080224069 | Fake ID finder - A counterfeit detection device that is useful for optically examining the security features of Drivers Licenses to determine its authenticity. The apparatus places the driver's license at the optimum focal point of a loupe suitable for enlarging the image of the micro printing as well as examining other fine security features such as UV and Kintegrams. In one embodiment, the devise consists of a 10-20 magnification device known as a loupe. One UV led and one white led which are mounted through the housing of the loupe. The Leds are positioned one hundred and eighty degrees apart from each other and are positioned downward at am angle to illuminate in the middle of the loupes housing. The Leds are powered by two separate circuit boards which are powered by 6 volt batteries. The invention consists of main housing which holds one loupe, two circuit boards, two batteries; the devise is designed as to allow the loupe and circuit boards to snap into place without the need of nuts, screws or bolts to hold them in place. Further embodiments include a license guide plate which can be snapped onto the bottom of the housing of the devise. The license guide plate allows for the optimum focal point for viewing the micro printing in a driver license. The guide plate also allows the device to be fix mounted to a wall and be used as a hand held unit. There is a whole located on the bottom of the license guide plate to allow the white Light and UV to pass through which enables it to be used as a flashlight or UV flashlight for inspecting the UV unmagnified. | 2008-09-18 |
20080224070 | Method and Electronic Control System to Compensate For the Aging-Related Brightness Loss of an Electroluminescent Element - The invention relates to a method for compensating the ageing-related loss of luminosity of an electroluminescence element, according to which the cumulative electrical energy supply, i.e. the integral of the supplied electrical power over the period of operation, is used as a criteria for the compensating regulation of the operating voltage. The processing unit continuously integrates the supplied electrical power over time. The relation between the operating voltage and the emission luminosity of the electroluminescence element is stored in the memory for different cumulative electrical energy supplies. The stored data can be defined by means of a model or estimated on the basis of empirical values. The relation can be stored in the form of values stored in a tabular manner or as an analytical function in the memory. The processing unit determines the associated effective operating voltage Ui for the luminosity nominal value B and the cumulative energy supply /Pi dt, and adjusts the voltage supply to the value by means of a control signal emitted from the signal output. | 2008-09-18 |
20080224071 | INSPECTION APPARATUS - The invention is to provide an inspection apparatus causing interactions of plural times between an object and an electromagnetic wave, thereby enabling inspection with a satisfactory sensitivity even for an object of a trace amount. The inspection apparatus detects information from an object 112 based on a change in an electromagnetic wave transmission state caused by plural times of interactions between the electromagnetic wave and the object 112. The inspection apparatus includes a transmission line 16, an electromagnetic wave supplying and detecting unit 111 for supplying the transmission line 16 with the electromagnetic wave and detecting the electromagnetic wave, a reflection unit 110 for reflecting the electromagnetic wave transmitting through the transmission line 16, and an inspection unit 113 for placing the object 112 between the electromagnetic wave supplying and detecting unit 111 and the reflection unit 110, wherein the transmission line 16, the reflection unit 110 and the inspection unit 113 are formed on a same substrate 11. | 2008-09-18 |
20080224072 | Apparatus for and Method of Preparing a Small Amout of a Radioactive Substance Combination - The invention relates to an apparatus for preparing a small amount of a radioactive substance combination, including a one-part body, a mixing device integrated in the body and adapted to receive a small amount of chemical substances, and at least one receptacle integrated in the body and connected to the mixing device and adapted to hold a small amount of a chemical substance. | 2008-09-18 |
20080224073 | HYDRAULIC VALVE ARRANGEMENT - The invention concerns a hydraulic valve arrangement ( | 2008-09-18 |
20080224074 | FLEXIBLE VALVE PLATE AND LOW FRICTION CONTROL SERVO EMPLOYING THE SAME - A low friction control servo is provided that includes a housing having an inlet and an outlet. A flexible valve plate is disposed within the housing and includes a curved arm. The curved arm is adapted to flex between (i) an closed position wherein airflow through the outlet is substantially impeded, and (ii) an open position. An actuator is coupled to the housing and engages the curved arm to control the position thereof. | 2008-09-18 |
20080224075 | VARIABLE PRESSURE DROP AND/OR CLOSING AND SEALING DEVICES WITH INTERNAL CARTRIDGE AND MOBILE TUBE - Device for pressure drop, and/or closing and sealing a fluid circuit, with internal cartridge and mobile tube. The inventive device serves to produce a variable singular pressure drop on a line but also serves, optionally, to close and seal this line which may have a large diameter, at high pressure and at high temperature. In fact, via the movement of a mobile tube, the device of the invention serves to variably shut openings for the passage of the fluid transported in the line, this mobile tube may optionally create an autoclave seal on a closure seat at the end of travel. The torque required for operating the device is very low throughout the travel. Assembly and maintenance are simplified by the use of a removable cartridge immersed in the fluid containing almost all the members required for operating the device. It operates on all types of fluids. | 2008-09-18 |
20080224076 | Choke or inline valve - Disclosed herein is an inline valve. The inline valve includes, a housing, a choke member in operable communication with the housing, a portion of the choke member being substantially immobile relative to the housing and a portion of the choke member being mobile relative to the housing. The inline valve further includes, an actuator in operable communication with the movable portion of the choke member, the actuator selectively causing the choke member to deform radially. | 2008-09-18 |
20080224077 | Magnetically Actuable Valve - The magnetically actuable valve has an interior space which is surrounded by a magnetizable wall and in which a valve body can move, closing a valve opening in the closed position. The magnetic circuit includes at least one intermediate piece made from nonmagnetic material, while the wall and the valve seat consist of magnetizable material. As a result of the valve body being arranged eccentrically or as a result of the intermediate pieces being arranged asymmetrically, the magnetic flux density is increased on one side, so that the valve body moves onwards towards this side from the valve opening. | 2008-09-18 |
20080224078 | Modular Fittings and Assemblies for Fluid Switching - A modular fitting for use with a commercially-available fluid or pneumatic switch, such as solenoid valves. The modular fittings disclosed can be aggregated to form a resulting modular fitting assembly according to the number of fluid circuits desired. The modular fittings include one or more coupling features that provide the ability to couple adjacent modular fittings. | 2008-09-18 |
20080224079 | Valve having diameter-reducible joint part, joint for diameter reduction, and plumbing system using these - A valve having a diameter-reducible joint includes a diameter-reducible housing having a flow path therein and accommodating a seal sleeve formed of rubber, a valve mechanism provided with a valve element and built in the housing to enable switching of the flow path and controlling of a flow rate, and a junction pipe having a junction end joined with the seal sleeve to the diameter-contracted joint in a tightly sealed fashion through diameter reduction of the housing. A plumbing system comprising a pipe that has a terminal and a valve which comprises a diameter-reducible joint part having diameter-enlarging and -reducing functions, a housing having one or both joint portions enlarged and reduced in diameter to join the pipe thereto and a disc disposed within the housing and which is attached to the terminal of the pipe. | 2008-09-18 |
20080224080 | Beverage Dispense Valves - A beverage dispense valve is described comprising (i) a body [ | 2008-09-18 |
20080224081 | Valve Assembly - The present invention has an object to improve the flow property so as to increase the gas flow amount, to inhibit the gas from staying within a valve chamber, and to enhance the gas-replacement property such as evacuation performance and purge performance. | 2008-09-18 |
20080224082 | Valves | 2008-09-18 |
20080224083 | SNAP-ACTION VALVE FOR EXHAUST SYSTEM - A passive, exhaust pressure actuated valve assembly for placement inside a tubular exhaust conduit is pivotally mounted to an off-center axle for rotation between fully closed and fully opened positions. A bias element forces the valve flap toward the fully closed position. The valve flap is shaped in a manner enabling use of the interior surface of the exhaust conduit to define stops at the full closed and full opened positions. The valve flap shape, in conjunction with the bias element arrangement, enables the flap to lie substantially parallel to a longitudinal axis of the conduit in the fully opened position, which provides for minimum back pressure in the conduit. | 2008-09-18 |
20080224084 | PRESSURE CONTROL VALVE ASSEMBLY - A pressure control valve assembly including a valve body with a valving cavity, a metal insert, a member and ball, a plastic internal ball guide, and a plug. The metal insert, which is received within the valving cavity, includes an exhaust port, a pressure control port, a supply port, and a plug-receiving end. The plastic internal ball guide is included within a portion of the metal insert. The member extends within a portion of the insert and is movable with respect to the exhaust port, the member moving a ball with respect to a supply port. In an embodiment, a plug is received within the plug-receiving end of the insert. A method for making a valve body for a valve assembly is also disclosed. | 2008-09-18 |
20080224085 | VALVE AND METHOD FOR CONTROLLING FLOW IN TUBULAR MEMBERS - Further disclosed herein is a method for controlling fluid flow. The method includes, selectively deforming at least one selectively deformable member disposed between two tubular members that are radially aligned with one another, at least one of the at least one deformable member being positioned between a fluid inlet and a fluid outlet. The method further includes regulating flow of fluid by deforming the at least one deformable member positioned between the fluid inlet and the fluid outlet sufficiently to achieve a desired flow rate. | 2008-09-18 |
20080224086 | Aqueous Microcapsule Dispersions - An aqueous microcapsule dispersion, including water; microcapsules charged with one or more ingredients or active components; and one or more polymeric dispersants, where the polymers are homopolymers or copolymers, and the polymers comprise at least five monomer units is provided. | 2008-09-18 |
20080224087 | Aqueous-Based Insulating Fluids and Related Methods - Provided herein are methods and compositions that include a method comprising providing an annulus between a first tubing and a second tubing; providing an aqueous-based insulating fluid that comprises an aqueous base fluid, a water-miscible organic liquid, and a layered silicate; and placing the aqueous-based insulating fluid in the annulus. A composition provided includes an aqueous-based insulating fluid comprising an aqueous base fluid, a water-miscible organic liquid, and a layered silicate. | 2008-09-18 |
20080224088 | Emulsion Composition - The present invention provides an emulsion composition which has been increased in sulfonic group content, yet has sufficient water resistance and has been enhanced in properties such as small resistance, film-forming property, etc. The emulsion composition contains (A) a water-based solvent, (B) an organic solvent, (C) a sulfonic group-containing polymer soluble in the component (A), and (D) a polymer soluble in the component (B) but insoluble in water. This emulsion composition is enhanced in small resistance and yet has sufficient water resistance and film-forming property. | 2008-09-18 |
20080224089 | MATERIALS FOR THE FORMATION OF POLYMER JUNCTION DIODES - Polymerizable anions and/or cations can be used as the ionically conductive species for the formation of a p-i-n junction in conjugated polymer thin films. After the junction is formed, the ions are polymerized in situ, and the junction is locked thereafter. The resulting polymer p-i-n junction diodes could have a high current rectification ratio. Electroluminescence with high quantum efficiency and low operating voltage may be produced from this locked junction. The diodes may also be used for photovoltaic energy conversion. In a photovoltaic cell, the built-in potential helps separate electron-hole pairs and increases the open-circuit voltage. | 2008-09-18 |
20080224090 | METHOD OF MANUFACTURING SOLID ELECTROLYTIC CAPACITOR - The present invention provides a method of manufacturing a solid electrolytic capacitor including a step of forming a conductive polymer layer by chemical oxidization polymerization of a monomer using a solution containing a metal salt of carbon-fused bicyclic sulfonic acid as an oxidizing agent. The molar ratio X of a carbon-fused bicyclic sulfonate ion to a metal ion in the solution is less than the stoichiometric ratio Y of the metal salt of carbon-fused bicyclic sulfonic acid. This is allowed to provide a solid electrolytic capacitor with a sufficiently low equivalent series resistance (ESR) and high heat resistance. | 2008-09-18 |
20080224091 | 1,1,1,2,2,4,5,5,5-NONAFLUORO-4-(TRIFLUOROMETHYL)-3-PENTANONE REFRIGERANT AND HEAT TRANSFER COMPOSITIONS COMPRISING A FLUOROETHER - Compositions of 1,1,1,2,2,4,5,5,5-nonafluoro-4 (trifluoromethyl)-3 pentanone can be used in heat transfer refrigeration and air conditioning systems. The compositions may be in combination with fluoroethers. The compositions may be azeotropic or near azeotropic. | 2008-09-18 |
20080224092 | Etchant for metal - An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH | 2008-09-18 |
20080224093 | ETCHANT FOR SIGNAL WIRE AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL USING ETCHANT - Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH) | 2008-09-18 |
20080224094 | Method of Producing Chlorine Gas, Aqueous Sodium Hypochlorite Solution and Liquid Chlorine - It is intended to provide methods of producing a chlorine gas having a small bromine content, an aqueous sodium hypochlorite solution having a small bromic acid content, and liquid chlorine having a small bromine content. More specifically, a chlorine gas is produced by a method comprising the steps of: (A) washing a chlorine gas that contains bromine, in a gas washing unit composed of a packed column or a tray tower, wherein the chlorine gas introduced via a lower part of the gas washing unit is brought into counterflow gas/liquid contact with a liquid chlorine introduced via an upper part of the gas washing unit; and (B) taking out a purified chlorine gas thus washed, via the upper part of the gas washing unit, wherein a weight ratio of the chlorine gas and the liquid chlorine introduced in the step (A) is 1/1.0 to 1/0.3. | 2008-09-18 |
20080224095 | BIREFRINGENT FILM, POLYCYCLIC COMPOUND, COATING LIQUID, AND IMAGE DISPLAY DEVICE - The present invention provides a birefringent film that hardly generates cracks even when the film is exposed under a high-temperature and high-humidity environment for a long period of time. The birefringent film of the present invention is a film containing, as a major component, a lyotropic liquid crystalline polycyclic compound containing an acenaphtho[1,2-b]quinoxaline derivative unit in a molecular structure and having a molecular weight of 500 or higher. The birefringent film of the present invention preferably has a refractive index ellipsoid showing a relationship of nx≧nz>ny, and more preferably has an in-plane birefringence of 0.01 or higher at the wavelength of 590 nm. | 2008-09-18 |
20080224096 | PHOTOLUMINESCENT MATERIAL OF LIGHT-EMITTING DIODE PACKAGE STRUCTURE - An LED package structure including a carrier, an LED chip, an encapsulant and a PL material is provided, wherein the LED chip is disposed on the carrier for emitting light. The encapsulant encapsulates the LED chip. The PL material is distributed in the encapsulant. The PL material is suitable for being excited by the light emitted from the LED chip and scattering the light. Moreover, the present invention provides a novel PL material with a molecular formula of W | 2008-09-18 |
20080224097 | Catalyst for Catalytic Partial Oxidation of Hydrocarbon, and Method for Producing Synthetic Gas - [Problem] To provide a catalyst for catalytic partial oxidation having a high activity and a long-term durability; and to provide a method capable of attaining long-term stable catalytic partial oxidation. | 2008-09-18 |
20080224098 | POLYTHIOETHER AMINE RESINS AND COMPOSITIONS COMPRISING SAME - Polythioether amine resin compounds and compositions comprising the same are disclosed. | 2008-09-18 |
20080224099 | CARBOXYLIC ACID-MODIFIED EDOT FOR BIOCONJUGATION - An electroconductive carboxylic acid functionalized monomer corresponding to Formula (I), wherein A represents a hydrogen or a carboxyl group. Polymerized monomers of Formula (I) conjugated with a biomolecule result in conjugated PEDOT polymers of Formula (III) wherein A is a hydrogen or a carboxylic acid group and B is a biomolecule selected from the group consisting of a peptide, a protein, a lipid, a carbohydrate and a polynucleotide. The biomolecule conjugated polymers can be disposed onto an electrically conductive substrate wherein the substrate has a first layer of PEDOT polymerized on a surface of the substrate and a second layer of biomolecule conjugated PEDOT polymer of Formula (III) polymerized on the first layer of PEDOT. The first and second layers form a charge transport material in electrical communication with the conductive substrate. The electrically conductive substrate further comprises a dopant. | 2008-09-18 |
20080224100 | METHODS FOR PRODUCING COMPOSITES OF FULLERENE NANOTUBES AND COMPOSITIONS THEREOF - This invention relates generally to a method for producing composites of fullerene nanotubes and compositions thereof. In one embodiment, the present invention involves a method of producing a composite material that includes a matrix and a fullerene nanotube material embedded within said matrix. In another embodiment, a method of producing a composite material containing fullerene nanotube material is disclosed. This method includes the steps of preparing an assembly of a fibrous material; adding the fullerene nanotube material to the fibrous material; and adding a matrix material precursor to the fullerene nanotube material and the fibrous material. | 2008-09-18 |
20080224101 | POLYVINYLIDENE FLUORIDE COMPOSITES AND METHODS FOR PREPARING SAME - An electrically conductive composite comprising a polyvinylidene fluoride polymer or copolymer and carbon nanotubes is provided. Preferably, carbon nanotubes may be present in the range of about 0.5-20% by weight of the composite. | 2008-09-18 |
20080224102 | Black conductive thick film compositions, black electrodes, and methods of forming thereof - This invention is directed to black conductive compositions, black electrodes made from such compositions and methods of forming such electrodes. In particular, the invention is directed to a single layer bus electrode. | 2008-09-18 |
20080224103 | WIDELY WAVELENGTH TUNEABLE POLYCHROME COLLOIDAL PHOTONIC CRYSTAL DEVICE - The present invention discloses a widely wavelength tunable polychrome colloidal photonic crystal device whose optical Bragg diffraction stop bands and higher energy bands wavelength, width and intensity can be tuned in a continuous and fine, rapid and reversible, reproducible and predictable fashion and over a broad spectral range by a controlled expansion or contraction of the colloidal photonic lattice dimension, effected by a predetermined change in the electronic configuration of the composite material. In its preferred embodiment, the material is a composite in the form of a film or a patterned film or shape of any dimension or array of shapes of any dimension comprised of an organized array of microspheres in a matrix of a cross-linked metallopolymer network with a continuously variable redox state of charge and fluid content. The chemo-mechanical and electro-mechanical optical response of the colloidal photonic crystal-metallopolymer gel is exceptionally fast and reversible, attaining its fully swollen state from the dry shrunken state and vice versa on a sub-second time-scale. These composite materials can be inverted by removal of the constituent microspheres from the aforementioned colloidal photonic crystal metallopolymer-gel network to create a macroporous metallopolymer-gel network inverse colloidal photonic crystal film or patterned film or shape of any dimension optical Bragg diffraction stop bands and higher energy bands wavelength, width and intensity can be redox tuned in a continuous and fine, rapid and reversible, reproducible and predictable fashion and over a broad spectral range by a controlled expansion or contraction of the colloidal photonic lattice dimensions. | 2008-09-18 |
20080224104 | Method for Preparation of Stable Metal Oxide Nanoparticles Suspensions - The invention relates to a method for the preparation of stable suspensions of metal oxide nanoparticles, in which uncharged metal oxide nanoparticles are first treated with a non-ionic surfactant in a polar organic solvent under certain conditions, and the suspension obtained is then treated with a charging solution. The suspensions of the invention can be used for preparation of high quality metal oxide films by electrophoresis deposition (EPD). | 2008-09-18 |
20080224105 | Intumescent Coating Compositions - A liquid intumescent coating composition comprising a resin system. The resin system comprises at least one polymeric component, one or more ethylenically unsaturated monomeric components and at least one intumescent ingredient. The coating composition is curable to a solid state in a free-radical polymerisation reaction. | 2008-09-18 |
20080224106 | PROCESS FOR TREATING COMPOSITIONS CONTAINING URANIUM AND PLUTONIUM - Process for treating compositions containing uranium and plutonium, including spent nuclear fuel, are provided. | 2008-09-18 |
20080224107 | Device and System For Lifting a Motor Vehicle - A preferred embodiment of a system includes a lifting device for lifting a motor vehicle, a support structure for mounting the lifting device in a pit, and a carriage for supporting the lifting device from the support structure and being movable within the support structure. The system also includes a cover coupled to opposite sides of the carriage so that the cover extends away from the carriage and continuously between the opposite sides of the carriage. | 2008-09-18 |
20080224108 | Wire Pulling Apparatus - A frame is pivotally connected to a chassis at a location near a first end of the frame. A jack is disposed between the chassis and the frame to enable pivoting movement of the frame relative to the chassis. A pulley is connected to the frame at a location near a second end of the frame that is opposite the first end of the frame. A winch is disposed on the frame to enable pulling of wire over the pulley. A control device enables control of the jack so as to enable positioning of the pulley that is connected to the frame. | 2008-09-18 |
20080224109 | PULLER DEVICE - A puller device has a body including a pulling assembly, a support set and a brace assembly pivotally coupled above the support set. The pulling assembly includes a cylinder affixed at one acting end thereof and hooks connected onto the cylinder. The pulling assembly is secured onto a movable bracket having a bulge extended downwardly therefrom. The hooks may be driven to expandably and retractably pull mechanical components out by a hydraulic control valve assembly. The support set may expand upwardly and retract downwardly for supporting the body to vertically move. The top of the support set is axially connected with the brace assembly, so as to support the combined movable bracket and pulling assembly as a whole. A micro-adjusting means is disposed onto the brace assembly for adjusting the lateral position of the body, and another micro-adjusting means is also mounted onto the brace assembly for vertically adjusting the tilted angle of the body. | 2008-09-18 |
20080224110 | Battery powered winch - A portable winch assembly includes a winch mechanism connected to a support structure adapted to be manually transportable. A battery pack is releasably coupled to a remote control unit. The remote control unit is operated to control the winch mechanism. The battery pack and the remote control unit can be electrically connected to the winch mechanism by a flexible power cable, or the battery pack can be mounted with the winch mechanism and a wireless remote control unit can be used to operate the winch mechanism. | 2008-09-18 |
20080224111 | CABLE HANDLING DEVICE - A cable handling device for use in the deployment and/or retrieval of a cable comprises a drum which provides mounting for a number of grooved rings, the rings receiving a cable thereabout. The drum forms an inner bearing race with each ring forming an outer bearing race such that the rings are independently and rotatably coupled to the drum. A second drum having one or more grooved ring is provided and the cable can be wound around the first and second drums. In use, one or both of the drums is rotated and the device is adapted to control the tension in the cable and/or to mitigate distortion in the cable caused by slippage between the cable and the device. | 2008-09-18 |
20080224112 | METHOD AND APPARATUS FOR OPERATING AN IMPLEMENT FOR A MACHINE - A method and apparatus for operating an implement for a machine is provided. The machine has a body, a pump, an implement, an operator station, a first operator input device, and a second operator input device. The pump is mounted to the body and has a first operating range. The implement is mounted to the body and coupled to the pump. The operator station is positioned on the body. The first operator input device is located within the operator station and operable to control the implement over the first operating range and the second operator input device is positioned external to the operator station and operable to control the implement over a second operating range. The second operating range is less than the first operating range. | 2008-09-18 |
20080224113 | Support Jack - A support jack, in particular for supporting semitrailers, includes a vertically telescopically displaceable supporting element having an outer sleeve and an inner sleeve, each sleeve having a rectangular cross-section with four sidewalls in each case. At least one sidewall at least of the inner sleeve has an additional wall plate. Another alternative proposes that at least one sidewall at least of the inner sleeve consists of a wall plate which the two adjacent sidewalls are fixed. An arrangement of such a support jack on the lower side of a vehicle is also described. | 2008-09-18 |
20080224114 | PROTECTING FENCE AND ITS POSITIONING MEMBER - A protecting fence and its positioning member include a protecting fence, a positioning block and a positioning base. The protecting fence is made of foamed engineering plastics by extrusion, with reflective bands. The positioning block has a through hole and an inner surface shaped to match with the protecting fence. The positioning base has a fence combining surface plural holes for being inserted by a bolt to keep the protecting fence and the positioning block fixed together with the positioning base. The fence combining surface has two edge surfaces respectively formed a groove to engage with two edges of the protecting fence. A rear fixing member has a post combining surface employed together with that of the positioning base to wrap the fence post to tightly fix the protecting fence with the fence post by bolts. | 2008-09-18 |
20080224115 | Fabricating a Set of Semiconducting Nanowires, and Electric Device Comprising a Set of Nanowires - The method of fabricating a set of semiconducting nanowires ( | 2008-09-18 |
20080224116 | Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element - An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage. | 2008-09-18 |
20080224117 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device includes a first resistance change element having a first portion and a second portion, the first portion and the second portion having a first space in a first direction, and a second resistance change element formed to have a distance to the first resistance change element in the first direction, and having a third portion and a fourth portion, the third portion and the fourth portion having a second space in the first direction, and the first space and the second space being shorter than the distance. | 2008-09-18 |
20080224118 | HEAT-SHIELDED LOW POWER PCM-BASED REPROGRAMMABLE EFUSE DEVICE - An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes. | 2008-09-18 |
20080224119 | PHASE CHANGE MEMORY ELEMENT AND METHOD OF MAKING THE SAME - Thin-film phase-change memories having small phase-change switching volume formed by overlapping thin films. Exemplary embodiments include a phase-change memory element, including a first phase change layer having a resistance, a second phase change layer having a resistance, an insulating layer disposed between the first and second phase change layers; and a third phase change layer having a resistance, and coupled to each of the first and second phase change layers, bridging the insulating layer and electrically coupling the first and second phase change layers, wherein the resistance of the third phase change layer is greater than both the resistance of the first phase change layer and the second phase change layer. | 2008-09-18 |
20080224120 | Phase change device with offset contact - A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell. | 2008-09-18 |
20080224121 | SPONTANEOUS EMISSION OF TELECOMMUNICATION WAVELENGTH EMITTERS COUPLED TO AT LEAST ONE RESONANT CAVITY - Systems and methods for devices that include a structure having at least one resonant cavity and at least one emitter having an emission frequency that is substantially in the telecommunication wavelengths are provided. The emission frequency can be coupled to the resonant frequency of resonant cavity so that emitted wavelengths corresponding to the resonant wavelengths of the resonant cavity are enhanced. Moreover, the devices of the present invention may be capable of operating at room temperatures. | 2008-09-18 |
20080224122 | Semiconductor Nanowire and Semiconductor Device Including the Nanowire - A nanowire ( | 2008-09-18 |
20080224123 | Methods for nanowire alignment and deposition - The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution. | 2008-09-18 |
20080224124 | Transistor on the basis of new quantum interference effect - A quantum interference transistor comprising a thin metal film having a protrusion and a thin insulating layer between the metal film and protrusion. A potential barrier is formed in the region beneath the protrusion as a result of quantum interference caused by the geometry of the film and protrusion. A voltage applied between the electrically isolated protrusion (“island”) and the thin film leads to a change in the electron wave function of the island which in turn leads to a change in the Fermi level of the metal film in the entire region beneath the protrusion. Consequently, a potential barrier may or may not exist depending on the applied voltage, thus providing the present invention with the transistor-like property of switching between open and closed states. | 2008-09-18 |
20080224125 | Semiconductor Device - The disclosed is a semiconductor device which comprises a circuit which is formed on a substrate and which includes an insulated gate type semiconductor field-effect transistor element or an TFT element, wherein as compared with the electrostatic capacitance per a unit area of a gate insulating film at a channel part of the transistor element, the electrostatic capacitance per a unit area of a insulating film at the other portion of overlap part between electrodes or wiring lines is small. In the semiconductor device which has an insulated gate type semiconductor field-effect transistor element or a TFT element, a high mutual conductance is obtained and the absolute value of gate threshold voltage is repressed while the adverse influence to the circuit operation by means of the parasitic capacity is repressed. | 2008-09-18 |
20080224126 | Spin-coatable liquid for formation of high purity nanotube films - Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×10 | 2008-09-18 |
20080224127 | Gate dielectric structures, organic semiconductors, thin film transistors and related methods - Gate dielectric structures comprising an organic polymeric component, and organic semiconductor components, as can be used to fabricate thin film transistor devices. | 2008-09-18 |
20080224128 | Thin film transistor for display device and manufacturing method of the same - Provided are a thin film transistor for display devices and a manufacturing method of the thin film transistor. The thin film transistor for display devices includes: a flexible substrate; a gate electrode layer formed on the flexible substrate; a first insulating layer formed on the flexible substrate and the gate electrode; a source and a drain formed on the first insulating layer; an active layer formed on the first insulating layer between the source and the drain; a second insulating layer formed on the first insulating layer, the source, the drain, and the active layer; and a drain electrode that opens the second insulating layer to be connected to the drain and is formed of a CNT dispersed conductive polymer. | 2008-09-18 |
20080224129 | FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A flat panel display device, more particularly, an Organic Light Emitting Diode (OLED) display device having uniform electrical characteristics and a method of fabricating the same include: a thin film transistor of which a semiconductor layer including a source, a drain, and a channel region formed in a super grain silicon (SGS) crystallization growth region; a capacitor formed in an SGS crystallization seed region; and an OLED electrically connected to the thin film transistor. Further, a length of the channel region of the silicon layer is parallel with the growth direction in the SGS growth region to improve the electrical properties thereof. | 2008-09-18 |
20080224130 | ORGANIC SEMICONDUCTOR COPOLYMERS CONTAINING OLIGOTHIOPHENE AND n-TYPE HETEROAROMATIC UNITS - An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C | 2008-09-18 |
20080224131 | Compound, a molecular switch employing the compound and a method of electronic switching - Classes of molecules are disclosed which can, for example, be used in molecular switches. The classes of molecules include at least three segments—an electronic donor (“D”), a switchable bridge (“B”), and an electronic acceptor (“A”)—chemically connected and linearly arranged (e.g., D-B-A). The electronic donor can be an aromatic ring system with at least one electron donating group covalently attached; an aromatic ring system with an electron withdrawing group covalently attached is usually employed as the electronic acceptor; and the switchable bridge can be a pi system that can be switched on or off using an external electric field. | 2008-09-18 |
20080224132 | Stacked Organic Photosensitive Devices - A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength λ | 2008-09-18 |
20080224133 | Thin film transistor and organic light-emitting display device having the thin film transistor - Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less. | 2008-09-18 |
20080224134 | Test Structures for Identifying an Allowable Process Margin for Integrated Circuits and Related Methods - A test structure for inspecting an allowable process margin in a manufacturing process for a semiconductor device is provided. The test structure includes a plurality of grounded conductive lines on a substrate and electrically grounded to the substrate. A plurality of floating conductive lines are provided, each of the plurality of conductive lines being spaced apart from the grounded conductive lines and electrically separated from the grounded conductive lines on the substrate. A plurality of supplementary patterns are provided for measuring the allowable process margin by a voltage contrast between the grounded conductive lines and the floating conductive lines. Related methods of testing are also provided. | 2008-09-18 |
20080224135 | METHOD AND STRUCTURE FOR DETERMINING THERMAL CYCLE RELIABILITY - A device and method for evaluating reliability of a semiconductor chip structure built by a manufacturing process includes a test structure built in accordance with a manufacturing process. The test structure is thermal cycled and the yield of the test structure is measured. The reliability of the semiconductor chip structure built by the manufacturing process is evaluated based on the yield performance before the thermal cycling. | 2008-09-18 |
20080224136 | IMAGE SENSOR AND FABRICATION METHOD THEREOF - An image sensor contains a semiconductor substrate, a plurality of pixels defined on the semiconductor substrate, a photo conductive layer and a transparent conductive layer formed on the pixel electrodes of the pixels in order, and a shield device positioned between any two adjacent pixel electrodes. The shield device has a shield electrode and an isolation structure surrounding the shield electrode so that the shield electrode is isolated from the pixel electrodes and the photo conductive layer by the isolation structure. | 2008-09-18 |
20080224137 | Image Sensor and Method for Manufacturing the Same - An image sensor and a method of manufacturing the same are provided. A metal wiring layer is formed on a semiconductor substrate including a circuit region, and first conductive layers are formed on the metal layer separated by a pixel isolation layer. An intrinsic layer is formed on the first conductive layers, and a second conductive layer is formed on the intrinsic layer. | 2008-09-18 |
20080224138 | Image Sensor and Method of Manufacturing the Same - Disclosed is an image sensor, which includes a substrate having a transistor circuit and lower interconnections. First interconnections are formed separated from each other on the substrate and electrically connected to the CMOS circuitry through the lower interconnections. Planarized insulating layers are formed between the first interconnections to isolate unit pixels. An intrinsic layer is formed on the substrate including the insulating layers, and a second conductive layer is formed on the intrinsic layer. The first interconnections, the intrinsic layer and the second conductive layer provide a photodiode structure for the image sensor. | 2008-09-18 |
20080224139 | THIN FILM TRANSISTOR - A thin film transistor including a substrate, a gate, a gate insulator layer, a semiconductor layer, an ohmic contact layer, a source and a drain is provided. The gate is disposed on the substrate while the gate insulator layer is disposed on the substrate and covers the gate. The semiconductor layer is disposed on the gate insulator layer above the gate. The semiconductor layer includes an undoped amorphous silicon layer and a first undoped microcrystalline silicon (μc-Si) layer, wherein the first undoped μc-Si layer is disposed on the undoped amorphous silicon layer. The ohmic contact layer is disposed on part of the semiconductor layer and the source and the drain are disposed on the ohmic contact layer. Therefore, the thin film transistor has better quality control and electrical characteristics. | 2008-09-18 |
20080224140 | Semiconductor device and manufacturing method thereof - It is an object of the present invention to provide a semiconductor device mounted with a memory which can be driven in the ranges of a current value and a voltage value which can be generated from a wireless signal. It is another object to provide a write-once read-many memory into which data can be written anytime after manufacture of a semiconductor device. An antenna, an antifuse-type ROM, and a driver circuit are formed over a substrate having an insulating surface. A stacked layer of a silicon film and a germanium film is interposed between a pair of electrodes included in the antifuse-type ROM. The antifuse-type ROM having this stacked layer can reduce fluctuation in writing voltage. | 2008-09-18 |
20080224141 | LIQUID CRYSTAL DISPLAY AND FABRICATION METHOD THEREOF - A method for fabricating an LCD includes: providing a substrate with a thin film transistor (ITT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer, a semiconductor layer, and a metallic film for source and drain electrodes on the substrate; selectively etching the metallic film for source and drain electrodes, the semiconductor layer and the gate insulating layer through a second printing process to form a gate insulating layer pattern, a preliminary active pattern and a metallic film pattern which are sequentially stacked such that the gate insulating layer pattern is over-etched from the side of the preliminary active pattern; forming an insulating layer on the substrate with the metallic film pattern; etching the insulating layer to expose the metallic film pattern; forming a transparent conductive film on the metallic film pattern and a remaining insulating film; and selectively etching the transparent conductive film, the metallic film pattern, the preliminary active pattern to form an active pattern, a source electrode, a drain electrode, and a pixel electrode connected with the drain electrode. | 2008-09-18 |
20080224142 | Semiconductor Structure of Liquid Crystal Display and Manufacturing Method Thereof - A semiconductor structure of a liquid crystal display and the manufacturing method thereof are described. The manufacturing method includes the following steps. A patterned polysilicon layer and a first dielectric layer are formed on a substrate. A first patterned metal layer is formed to construct a gate electrode and a capacitor electrode. An ion implantation is conducted on the polysilicon layer to form drain and source electrodes. A second dielectric layer and a second patterned metal layer are formed thereon. Sequentially, a third dielectric layer is formed thereon. A plurality of via openings are formed by a patterned photoresist layer, and a third metal layer is formed thereon and filled into the via openings. The patterned photoresist layer and the redundant third metal layer are stripped from the substrate to form via plugs in the via openings. A patterned transparent conductive layer is formed thereon to connect the via plugs. | 2008-09-18 |
20080224143 | THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, FLAT PANEL DISPLAY DEVICE, AND SEMICONDUCTOR DEVICE, AND METHODS OF FABRICATING THE SAME - A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method. | 2008-09-18 |
20080224144 | FABRICATION METHOD OF PIXEL STRUCTURE AND THIN FILM TRANSISTOR - A method of fabricating a thin film transistor is disclosed. First, a substrate is provided and a patterned polysilicon layer is formed on the substrate. A metal layer is formed on the patterned polysilicon layer. Then, a portion of the metal layer is removed so that the remaining metal layer beside the patterned polysilicon layer forms a source and a drain. A gate insulation layer is formed on the substrate to cover the source, the drain and the patterned polysilicon layer. A gate is formed on the gate insulation layer over the patterned polysilicon layer. | 2008-09-18 |
20080224145 | Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof - A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr. | 2008-09-18 |
20080224146 | Semiconductor Apparatus, Solid State Image Pickup Device Using the Same, and Method of Manufacturing Them - The invention provides a semiconductor apparatus provided with at least one set of buried channel type first conductive type MOS transistor and surface channel type first conductive type MOS transistor on the same substrate, in which a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. Further, the invention provides a solid state image pickup device having a photoelectric conversion portion and a pixel including a plurality of transistors formed in correspondence to the photoelectric conversion portion, in a substrate, wherein the plurality of transistors includes a buried channel type first conductive type MOS transistor and a surface channel type first conductive type MOS transistor, and a first conductive type impurity region is provided below a gate electrode of the buried channel type and surface channel type MOS transistors and between source drain regions. | 2008-09-18 |
20080224147 | THIN FILM TRANSISTOR, DISPLAY DEVICE USING THEREOF AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND THE DISPLAY DEVICE - A thin film transistor includes a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer including a channel region formed over the gate electrode, a source electrode and a drain electrode including a region connected to the semiconductor layer, where at least a part of the region is overlapped with the gate electrode, an upper insulating film formed to cover the semiconductor layer, the source electrode and the drain electrode, where the upper insulating film is directly in contact with the channel region of the semiconductor layer and discharges moisture by a heat treatment and a second upper insulating film formed to cover the first protective film and suppress moisture out-diffusion. | 2008-09-18 |
20080224148 | SEMICONDUCTOR SENSING DEVICE - A semiconductor sensing device in which a sensing layer is exposed to a medium being tested in an area below and/or adjacent to a contact. In one embodiment, the device comprises a field effect transistor in which the sensing layer is disposed below a gate contact. The sensing layer is exposed to the medium by one or more perforations that are included in the gate contact and/or one or more layers disposed above the sensing layer. The sensing layer can comprise a dielectric layer, a semiconductor layer, or the like. | 2008-09-18 |
20080224149 | Silicon Carbide Semiconductor Device and Manufacturing Method Thereof - The present invention provides a silicon carbide semiconductor device comprising a semiconductor substrate comprising silicon carbide, which contains a first conductivity type impurity diffused therein in a high concentration, a semiconductor layer formed over the semiconductor substrate and containing the first conductivity type impurity diffused therein in a low concentration, a plurality of well regions formed on a front surface side of a cell forming area set to the semiconductor layer and in which a second conductivity type impurity corresponding to a type opposite to the first conductivity type impurity is diffused, source layers formed on the front surface side lying within the well regions and each containing the first conductivity type impurity diffused therein in a high concentration, an outer peripheral insulating film thick in thickness, which is formed over the semiconductor layer in an outer peripheral area that surrounds the cell forming area, a gate oxide film formed over the front surface of the semiconductor layer in the cell forming area, and a gate electrode layer formed so as to extend from above the gate oxide film to above the outer peripheral insulating film, wherein each of steplike portions adjacent to the outer peripheral insulating film and thicker than the gate oxide film in thickness is provided at an edge portion of the gate oxide film. | 2008-09-18 |
20080224150 | Silicon carbide semiconductor device - The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion. | 2008-09-18 |
20080224151 | Nitride-based semiconductor element and method of forming nitride-based semiconductor
- A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained. | 2008-09-18 |
20080224152 | Flat panel display having a control frame pedestal and method of making same - A method for providing a flat panel display comprising the steps of: providing an anode assembly containing a plurality of pixels; applying a photoresist to a surface of the anode assembly; applying a mask that defines a control frame top surface; exposing the mask to UV radiation and causing the photoresist to cross link at the exposed areas of the photoresist such that the exposed photoresist is inert and does not outgas in a vacuum; removing the unexposed areas of the photoresist to define a pedestal; forming a planarizing layer over the exposed photoresist pedestal; applying a metal layer over the planarizing layer; applying a second photoresist over the metal layer; exposing portions of the second photoresist and removing excess of the metal layer and the planarizing layer to form the metal layer only on top of the exposed photoresist pedestal; and applying nanotube emitters on the metal layer. | 2008-09-18 |
20080224153 | ELECTRONIC DEVICE, METHOD OF PRODUCING THE SAME, LIGHT-EMITTING DIODE DISPLAY UNIT, AND METHOD OF PRODUCING THE SAME - An electronic device includes a base having a first wiring thereon; a flexible film having a second wiring thereon; a plurality of elements each including a first connecting portion and a second connecting portion; and an adhesive agent layer, wherein each of the elements is sandwiched between the base and the film in a state in which the first connecting portion is in contact with the first wiring, the second connecting portion is in contact with the second wiring, and a tensile force is applied to the film, and, in this state, the base and the film are bonded with the adhesive agent layer. | 2008-09-18 |
20080224154 | Semiconductor Light-Emitting Device With Metal Support Substrate - One embodiment of the present invention provides a semiconductor light-emitting device which includes a multi-layer structure. The multilayer structure comprises a first doped layer, an active layer, and a second doped layer. The semiconductor light-emitting device further includes a first Ohmic-contact layer configured to form a conductive path to the first doped layer, a second Ohmic-contact layer configured to form a conductive path to the second doped layer, and a support substrate comprising not less than 15% chromium (Cr) measured in weight percentage. | 2008-09-18 |
20080224155 | LIGHT-EMITTING DIODE UNIT - An LED unit including a frame ( | 2008-09-18 |
20080224156 | Luminescent Diode Provided with a Reflection- Reducing Layer Sequence - A luminescence diode ( | 2008-09-18 |
20080224157 | GRADED DIELECTRIC LAYER - An optoelectronic device includes a passivation layer of a dielectric material having a graded composition that varies with depth, whether continuous or stepwise, to provide a first index of refraction proximate to a semiconductor or conductor material and provide a second index of refraction adjacent to a surrounding material, such as an encapsulant. The resulting graded dielectric layer reduces Fresnel losses by reducing index of refraction mismatches between the adjacent semiconductor or conductor layer and the surrounding medium. Methods for forming graded dielectric layers include supplying a nitrogen-containing source gas at a declining flow rate or concentration, while supplying an oxygen-containing source gas an rising flow rate or concentration, to a deposition chamber. | 2008-09-18 |
20080224158 | Light Emitting Device With Undoped Substrate And Doped Bonding Layer - A light emitting device having a stack of layers bonded to an undoped substrate with a doped layer between the stack of layers and the undoped substrate. The stack of layers include a layer of first conductivity type over the doped layer, an overlying light emitting layer and a layer of second conductivity type. In one embodiment, the doped substrate is grown on a sacrificial substrate along with the remaining stack of layers prior to bonding to the undoped substrate. Electrical contacts are coupled to device on a side opposite the undoped substrate. In one embodiment, the layers of first conductivity, the light emitting layer, and the layer of second conductivity are removed to expose the doped layer and a first electrical contact is coupled to the layer of first conductivity through the doped substrate, while a second electrical contact is coupled to the layer of second conductivity. | 2008-09-18 |
20080224159 | Optical Element, Optoelectronic Component Comprising Said Element, and the Production Thereof - The invention relates to an optical element ( | 2008-09-18 |
20080224160 | High-power light emitting diode and method of manufacturing the same - Provided is a method of manufacturing a high-power LED package, the method including the steps of: preparing a mold having an irregularity pattern; providing a transparent resin solid having an irregularity pattern provided on the surface thereof by using the mold; preparing an irregularity film with the irregularity pattern by cutting a portion of the transparent resin solid; preparing an LED package structure having a cavity in which an LED chip is mounted; filling transparent liquid resin into the cavity having the LED chip mounted therein; mounting the irregularity film on the transparent liquid resin such that the irregularity film projects from the cavity at a predetermined height; and curing the transparent liquid resin having the irregularity film mounted thereon. The irregularity pattern of the irregularity film projects from the cavity at a predetermined height. | 2008-09-18 |
20080224161 | Semiconductor Light Emitting Device and Multiple Lead Frame for Semiconductor Light Emitting Device - A semiconductor light emitting device that is excellent in radiating heat and that can be molded into a sealing shape having intended optical characteristics by die molding is provided. The semiconductor light emitting device includes: a lead frame including a plate-like semiconductor light emitting element mounting portion having an LED chip mounted on a main surface, and a plate-like metal wire connecting portion extending over a same plane as the semiconductor light emitting element mounting portion; a metal wire electrically connecting the LED chip and the metal wire connecting portion; a thermosetting resin molded by die molding or dam-sheet molding so as to completely cover the LED chip and the metal wire; and a resin portion provided to surround the lead frame and having the thickness not greater than the thickness of the lead frame. | 2008-09-18 |
20080224162 | Light emitting diode package - A light emitting diode (LED) package including: an LED chip; a first lead frame having a heat transfer unit with a top where a groove for stably mounting the LED chip is formed; a second lead frame disposed separately from the first lead frame; a package body having a concave portion encapsulating a portion of the heat transfer unit and the second lead frame but exposing a portion of the top of the heat transfer unit and a portion of the lead frame, and a ring-shaped portion extended in a ring shape along an inner wall of the groove of the heat transfer unit and forming an aperture in a center thereof; and a phosphor layer formed on the aperture of the ring-shaped portion and applied to the LED chip, wherein the LED chip is disposed in the inside of the aperture of the ring-shape portion. | 2008-09-18 |
20080224163 | LIGHT EMITTING DEVICE - A light emitting device can be characterized as including a light emitting diode configured to emit light and a phosphor configured to change a wavelength of the light. The phosphor substantially covers at least a portion of the light emitting diode. The phosphor includes a compound having a host material. Divalent copper ions and oxygen are components of the host material. | 2008-09-18 |
20080224164 | Light Emitting Device with a Nanocrystalline Silicon Embedded Insulator Film - A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter. | 2008-09-18 |