34th week of 2010 patent applcation highlights part 41 |
Patent application number | Title | Published |
20100216214 | Nitrilases, Nucleic Acids Encoding Them and Methods for Making and Using Them - The invention relates to nitrilases and to nucleic acids encoding the nitrilases. In addition methods of designing new nitrilases and method of use thereof are also provided. The nitrilases have increased activity and stability at increased pH and temperature. | 2010-08-26 |
20100216215 | METHOD AND DEVICE FOR THE CONCENTRATION OF MULTIPLE MICROORGANISMS AND TOXINS FROM LARGE LIQUID TOXINS - A method for the simultaneous concentration of multiple toxins from large volumes of water. The method includes the steps of providing a disposable separation centrifuge bowl, the centrifuge bowl including a positively charged material at it's inner core. A large water sample contaminated with toxins from a group consisting of protozoa, bacteria, bacterial spores, and toxins is delivered to the centrifuge bowl. A centrifugal force is applied to the separation bowl. The water sample is concentrated to remove large particles of the toxins in the bowl due to the centrifugal forces. The concentrated water sample is passes through the positively charged inner core to capture any remaining concentrated targets by electrostatic forces and the concentrated targets are eluted. | 2010-08-26 |
20100216216 | MICROORGANISM OF CORYNEBACTERIUM GENUS HAVING RESISTANCE TO KANAMYCIN AND ENHANCED L-LYSINE PRODUCTIVITY AND METHOD OF PRODUCING L-LYSINE USING THE SAME - Provided are a microorganism of | 2010-08-26 |
20100216217 | STEADY STATE ANAEROBIC DENITRIFYING CONSORTIUM FOR APPLICATION IN IN-SITU BIOREMEDIATION OF HYDROCARBON-CONTAMINATED SITES AND ENHANCED OIL RECOVERY - Enriched steady state microbial consortiums for microbial enhanced oil recovery and in situ bioremediation of hydrocarbon-contaminated sites, under anaerobic denitrifying conditions, are disclosed. | 2010-08-26 |
20100216218 | Apparatus for carbon dioxide-capture system and use of the same - An apparatus for carbon dioxide-capture system has a cultivating vessel and at least one basking mechanism. The cultivating vessel has a reservoir for accommodating alga culture. The basking mechanism is mounted in the reservoir of the cultivating vessel and has multiple trays and a circulating mechanism. The trays are imbricately mounted on the basking mechanism with predetermined intervals and each has at least one spout formed at an overlap with an adjacent tray. The circulating mechanism is mounted between the trays and the reservoir. The alga culture is pumped into one tray by the circulating mechanism, flows through the spout into another tray, enhancing a rate of carbon fixation by alga. | 2010-08-26 |
20100216219 | METHOD OF IN SITU BIOREMEDIATION OF HYDROCARBON-CONTAMINATED SITES USING AN ENRICHED ANAEROBIC STEADY STATE MICROBIAL CONSORTIUM - A method for in situ bioremediation of hydrocarbon-contaminated sites using an enriched steady state microbial consortium capable of modifying crude oil components under anaerobic denitrifying conditions is disclosed. | 2010-08-26 |
20100216220 | Devices and Methods for the Purification, Isolation, Desalting or Buffer/Solvent Exchange of Substances - A spin column device, which contains a rigid porous filter that retains its shape during centrifugation, chromatography methods using the device to isolate a desired substance, e.g., a biological molecule, from other substances in a mixture, and kits containing the device with one or more reagents for use in the method. | 2010-08-26 |
20100216221 | DEVICE WITH WHICH A HISTOLOGICAL SECTION GENERATED ON A BLADE OF A MICROTOME CAN BE APPLIED TO A SLIDE - A device for applying a histological section to a slide is described. The histological section is generated by a cutting action performed by a blade of a microtome. The device comprises a positioning device having a component that is rotatably mounted to a bearing and has a receptacle for receiving and holding the slide, wherein the positioning device is designed such that the slide received in the receptacle can be rotated about an axis of rotation of the rotatably mounted component. | 2010-08-26 |
20100216222 | Tissue Infiltration Device - The present invention relates to a tissue infiltration device ( | 2010-08-26 |
20100216223 | REAGENT PREPARING DEVICE, SPECIMEN MEASURING DEVICE AND REAGENT PREPARING METHOD - A reagent preparing device for preparing a reagent to be supplied to a measurement device for measuring a specimen, comprising: a first liquid storage unit for storing a first liquid; a reagent storage unit for storing a prepared reagent, including the first liquid and a second liquid different from the first liquid; a first liquid discarding unit for discarding the first liquid stored in the first liquid storage unit; and a controller configured for measuring an accumulated time of the first liquid in the first liquid storage unit; and controlling the first liquid discarding unit to discard the first liquid stored in the first liquid storage unit when the accumulated time reaches a predetermined time is disclosed. A specimen measuring device and a reagent preparing method are also disclosed. | 2010-08-26 |
20100216224 | REAGENT PREPARING DEVICE, SPECIMEN PROCESSING SYSTEM AND REAGENT PREPARING METHOD - A reagent preparing device capable of supplying a mixed solution, including a first liquid and a second liquid, to a measurement section for measuring a specimen using the mixed solution as a reagent, the reagent preparing device comprising: a first mixed solution container for accommodating the mixed solution; a second mixed solution container for accommodating the mixed solution; and a controller for controlling supply of the first liquid and the second liquid to supply the first liquid and the second liquid to the first mixed solution container, and to supply the first liquid and the second liquid to the second mixed solution container, is disclosed. A specimen processing system, and a reagent preparing method are also disclosed. | 2010-08-26 |
20100216225 | PORTABLE MICROORGANISM DETECTION UNIT - The present invention is a portable device for detecting microorganisms in a food sample. The device includes a DNA extraction tube, a chip, and a portable control unit. The DNA extraction tube extracts DNA from the sample in an aqueous solution. The extraction tube includes successive chambers that are configured to mince, filter, and purify DNA in the form of an aqueous eluate. The chip includes reaction chambers disposed for a polymerase chain reaction to amplify a specific DNA fragment in the eluate for detection, and the portable control unit is configured to receive the chip and analyze the amplified DNA on the chip. | 2010-08-26 |
20100216226 | Device, system, and method for controllably reducing inflammatory mediators in a subject - Devices, systems, and methods are provided for controlling an inflammatory response in a subject. Devices, systems, and methods are provided that alter the functional structure of one or more inflammatory mediators in the peripheral blood of the subject. The device or system is useful in a method for treating an inflammatory disease or condition in the subject. | 2010-08-26 |
20100216227 | Rotatable Sample Disk and Method of Loading a Sample Disk - A rotatable sample disk configured for samples of biological material. The sample disk may include a fill chamber for storing a first biological material, a plurality of first sample chambers positioned in the sample disk farther from the rotational axis of the sample disk than the fill chamber, a plurality of second sample chambers, and a plurality of circumferential fill channels. Each of the second sample chambers may be configured to permit fluid communication with a respective first sample chamber. The plurality of circumferential fill conduits may be configured to permit transfer of the first biological material from the fill chamber to the plurality of first sample chambers upon a first rotation of the sample disk about the rotational axis. Methods of loading a plurality of sample chambers in a sample disk are also provided. | 2010-08-26 |
20100216228 | MICROARRAY WITH MICROCHANNELS - A microarray formed in a planar surface of a moldable slab, the microarray including a plurality of microwell sets comprising a plurality of microwells formed in the planar surface of the moldable slab, each microwell being sized to contain at least a single cell, and a plurality of microchannels formed in the planar surface of the moldable slab, the plurality of microchannels being configured to permit liquid from a first region of the microarray to transit to a second region of the microarray. | 2010-08-26 |
20100216229 | CELL CULTURE SYSTEM WITH MANIFOLD - A cell culture apparatus includes cell culture units having cell culture chambers, each with at least one manifold. The manifold connects the cell culture unit to a fluid flow channel. The manifold has a dam which allows liquid to pool in the manifold and allows for the creation of an airspace in the manifold, which reduces hydrostatic pressure inside the apparatus and enables the stacking of multiple cell culture units. Embodiments include cascading manifolds, manifolds having reservoirs, and manifolds having valves. | 2010-08-26 |
20100216230 | Systems for Increased Cooling and Thawing Rates of Protein Solutions and Cells for Optimized Cryopreservation and Recovery - In systems and methods for freezing and subsequently thawing liquid samples containing biological components, a sample is fractioned into a very large number of small drops ( | 2010-08-26 |
20100216231 | VECTORS FOR DIRECTIONAL CLONING - The invention provides vectors and methods for directional cloning. | 2010-08-26 |
20100216232 | MAMMAL DEDICATED CELL LINE - A mammal dedicated cell line is provided, which is a HepG2 hepatocellular carcinoma cell line (HepG2/NF-kB/Luc/sr39tk)1_18 obtained by co-transformation with NF-kB/Luc and NF-kB/sr39tk. Firstly, a successfully transformed pNF-kB/Luc HepG2 cell is obtained. Then, a dedicated cell line sensitive to TPA and MTX is generated by experimental screening Next, a plasmid construct carrying pNF-kB/sr39tk genome is introduced into the dedicated cell line by means of Superfect protocol. Finally, a HepG2 cell line co-expressing NF-kB/Luc and NF-kB/sr39tk is screened with G418 and ZEOCIN, and transformation result is confirmed by luminescence and radio activity. The (HepG2/NF-kB/Luc/sr39tk)1_18 obtained is suitable to screen drug for treating liver cancer and examine these cells by bioluminescence imaging and nuclear medicine imaging. | 2010-08-26 |
20100216233 | ATTENUATED INVASIVE E.COLI STRAINS AND APPLICATIONS THEREOF AS INTRACELLULAR VECTOR FOR THERAPEUTIC MOLECULE - The invention relates to a vectorial system capable of delivering a nucleic acid of interest into eukaryotic target cells, said vectorial system including a recombinant non-pathogenic and non-replicative | 2010-08-26 |
20100216234 | Anti-IL-12 Antibody Based Vectors, Host Cells, and Methods of Production and Uses - Antibody expression vectors and plasmids can incorporate various antibody gene portions for transcription of the antibody DNA and expression of the antibody in an appropriate host cell. The expression vectors and plasmids have restriction enzyme sites that facilitate ligation of antibody-encoding DNA into the vectors. The vectors incorporate enhancer and promoter sequences that can be varied to interact with transcription factors in the host cell and thereby control transcription of the antibody-encoding DNA. A kit can incorporate these vectors and plasmids. | 2010-08-26 |
20100216235 | DIPEPTIDYL PEPTIDASES - Peptides including HisGlyTrpSerTyrGlyGlyPheLeu; LeuAspGluAsnValHisPhePhe; GluArgHisSerIleArg and PheValIleGlnGluGluPhe which show peptidase ability and have substrate specificity for at least one of the compounds H-Ala-Pro-pNA, H-Gly-Pro-pNA and H-Arg-Pro-pNA are disclosed. Nucleic acids, vectors, antibodies and hybridoma cells are also claimed with reference to the above sequences and their abilities. | 2010-08-26 |
20100216236 | Nuclear reprogramming factor and induced pluripotent stem cells - The present invention relates to a nuclear reprogramming factor having an action of reprogramming a differentiated somatic cell to derive an induced pluripotent stem (iPS) cell. The present invention also relates to the aforementioned iPS cells, methods of generating and maintaining iPS cells, and methods of using iPS cells, including screening and testing methods as well as methods of stem cell therapy. The present invention also relates to somatic cells derived by inducing differentiation of the aforementioned iPS cells. | 2010-08-26 |
20100216237 | OPTIMIZED AND DEFINED METHOD FOR ISOLATION AND PRESERVATION OF PRECURSOR CELLS FROM HUMAN UMBILICAL CORD - The present invention refers to an optimized and defined method for isolation and preservation of precursor cells from human umbilical cord. Besides being reproducible and 100% reliable, in terms of the number of samples processed, the method results in a high and defined number of precursor cells, being the majority obtained after a single adhesion and expansion/multiplication phase ex vivo (thus granting cell phenotype), in a shorter time frame than what was previously described in the state-of-the-art. With this method, it is possible to obtain, in 9 days, after direct freezing of a cell fraction, and after one expansion/multiplication phase ex vivo (end of P0) of the majority of the cells, about 8.6(±0.1)×10 | 2010-08-26 |
20100216238 | COMPOSITIONS AND METHODS FOR MODULATION OF SMN2 SPLICING - Disclosed herein are compounds, compositions and methods for modulating splicing of SMN2 mRNA in a cell, tissue or animal. Also provided are uses of disclosed compounds and compositions in the manufacture of a medicament for treatment of diseases and disorders, including spinal muscular atrophy. | 2010-08-26 |
20100216239 | ISOLATED NATURE-IDENTICAL COLLAGEN - The present invention concerns isolated collagen, the method for its production, and isolation of the collagen from collagen-containing tissues, as well as the use of the isolated collagen in a biomatrix as an in vitro test system, tissue replacement or organ replacement. | 2010-08-26 |
20100216240 | NON-INVASIVE AUTOMATED CELL PROLIFERATION APPARATUS - A cell proliferation apparatus for the automated culturing of cells, the proliferation apparatus including a bioreactor having contained therein a stimulus-responsive three dimensional (3D) cell scaffold, the stimulus-responsive three-dimensional (3D) cell scaffold being operable reversibly to change its surface properties between hydrophilic and hydrophobic states. The cell scaffold comprises a surface layer of thermo-responsive polymer. | 2010-08-26 |
20100216241 | FORMING CELL STRUCTURE WITH TRANSIENT LINKER IN CAGE - In a method of forming a cellular structure, cells and a transient linker are supplied to a volume partially enclosed by a cage. The linker facilitates initial attachment of adjacent cells to form a cell aggregate. The cage defines distributed openings that are sized to retain the cell aggregate. A fluid comprising a cell culture medium is supplied to the volume. The fluid is withdrawn from the volume through the openings. Aggregated cells retained in the volume are cultured to form a cell structure. A cell culturing device is provided which comprises a conduit and a cage in the conduit. A fluid flows in the conduit. The fluid comprises the cells, the transient linker and the cell culture medium. The cage retains aggregated cells formed in the fluid, and defines distributed openings that allow the fluid to flow through. | 2010-08-26 |
20100216242 | Cell culture support and production method and uses thereof - The present teachings provide a practical cell culture support by which a cell culture with a high degree of freedom can be realized. More specifically, the cell culture support includes a polymer layer exhibiting thermoresponsiveness and a cell culture region obtained by plasma-treating a surface layer portion thereof with a reactive gas, whereby a cell culture support having thermoresponsiveness and cellular adhesiveness while avoiding or limiting the use of cell adhesion factors is provided. | 2010-08-26 |
20100216243 | METAL ALGINATE HYDROGEL AND ARTICLES THEREOF - The present invention provides novel metal alginates prepared from non-cross-linked alginate monomers such as sodium alginate and an aqueous solution of a group 4, 5, or 6 metal oxyhalide. The novel group 4, 5, and 6 metal alginates are useful in the preparation of cell culture supports, exhibit useful X-ray contrast properties, and exhibit unanticipated stability to standard autoclave conditions relative to known metal alginates such as calcium alginate. In general, the novel metal alginates provided by the present invention offer features and properties not observed in known metal alginates such as calcium or barium alginates. | 2010-08-26 |
20100216244 | Microfluidic Chip and Method Using the Same - Disclosed is a microfluidic chip and method using the same. The microfluidic chip comprises a substrate having a surface, and at least a tissue culture area formed on the surface of the substrate. The tissue culture area has a microfluidic channel formed by a plurality of connected geometrical structures (nozzle-type channels) having a predetermined depth. The microfluidic channel has an inlet and an outlet, which are at two ends of the microfluidic channel, for medium inputting and outputting, respectively. Additionally, at least an air-exchange hole is formed on the bottom of the microfluidic channel. By using the microfluidic chip for tissue culture, lateral flow speed and stress can be decreased, so as to prolong survival time of tissues (e.g. liver tissues). | 2010-08-26 |
20100216245 | FROZEN CELL IMMOBILIZED PRODUCT, PRIMARY HEPATOCYTE CULTURE TOOL, AND METHOD FOR PRODUCING PRIMARY HEPATOCYTE CULTURE TOOL - The present invention provides a frozen cell immobilized product which is obtained by applying a technique for freezing cultured cells to a technique for forming primary hepatocyte spheroids through co-culturing, and which can improve performance in an examination or a test using the technique for forming primary hepatocyte spheroids; a primary hepatocyte culture tool; and a method for producing the primary hepatocyte culture tool. According to the invention, a cell-adhesion region of a culture substrate is defined in a pattern; animal-derived adherent cells are cultured on the cell-adhesion region; and the cultured cells are frozen together with a freezing culture medium. | 2010-08-26 |
20100216246 | COMBINATION DRIVE FOR A SAMPLING SYSTEM FOR COLLECTING A LIQUID SAMPLE - A sampling system for collecting a liquid sample, having at least one analytic auxiliary means is proposed. The sampling system has a coupling element for coupling onto the analytic auxiliary means and at least one drive unit for driving a movement of the coupling element from a rest position into a deflected position. The drive unit comprises an energy transducer which is designed to generate a rotational movement with different rotational directions. The drive unit furthermore has a coupling device with at least one rotational-direction sensitive element, wherein the coupling device is designed to couple the energy transducer to a first system function in a first rotational direction, and to couple said transducer to a second system function which differs from the first system function in a second rotational direction which differs from the first rotational direction. | 2010-08-26 |
20100216247 | Identification of Biomarkers for Screening and Monitoring of Prostate Cancer and Prostate Related Diseases - A system and method for determining presence of prostate cancer or prostate related diseases is provided. The method includes first obtaining a test sample from a test subject. Next, at least one ultrastructural biomarker indicative of prostate cancer within the sample may be identified. Thereafter, qualitative or quantitative data from the ultrastructural biomarker in the test sample can be obtained. The qualitative or quantitative data of the biomarker in the sample from the test subject can then be compared to that in a sample from a control subject for variations. The presence of qualitative and quantitative variations can act as a determinant for prostate cancer or prostate related diseases. | 2010-08-26 |
20100216248 | DISPOSABLE CHAMBER FOR ANALYZING BIOLOGIC FLUIDS - An apparatus for analyzing biologic fluid is provided that includes a first planar member, a second planar member, and at least three separators. At least one of planar members is transparent. The separators are disposed between the members, and separate the members to form a chamber having a height. At least one of the members or separators is sufficiently flexible to permit the chamber height to approximate the mean size of the separators. During use, the biologic fluid to be analyzed is disposed within the chamber. | 2010-08-26 |
20100216249 | DNA-Based Biosensors - There is described a method of detection of the protein-dependent coincidence of DNA in a sample which comprises detection using luminescence of one or more luminophores introduced into DNA with one, two or more DNA fragments which fragments are bound using one or more DNA-binding proteins. | 2010-08-26 |
20100216250 | Methods for Predicting Trisomy 21 in a Fetus - The present invention relates to biomarkers in maternal serum samples and methods for predicting whether a fetus has Trisomy 21 during the first trimester of pregnancy based on the differential expression of a combination, or subcombination, of the same. | 2010-08-26 |
20100216251 | USE OF ACETIC NITRIC ACID REAGENT FOR EXTRACTION OF OLIGOSACCHARIDES AND POLYSACCHARIDES TO CHARACTERIZE CARBOHYDRATE MATERIALS FROM PLANTS AND OTHER SOURCES OF CELLULOSE USING GLYCAN OLIGOMER ANALYSIS - This patent application is for the use of acetic nitric reagent (80% acetic acid, 1.8 N nitric acid) for the extraction of oligosaccharides and polysaccharides from carbohydrate containing materials The material is extracted with the acetic nitric reagent in a boiling water bath for various periods of time, usually 30 minutes The material is then centrifuged and the clear, yellowish, supernatant is then taken to dryness in a Speed Vac under reduced pressure. The dry residue is then taken up in water and centrifuged to remove particulates The resulting supernatant is then analyzed by high pH anion exchange chromatography with integrated amperonetric detection The resulting chromatogram matogram or the integrated areas under the peaks are then characteristic for that particular source of material. | 2010-08-26 |
20100216252 | Lanthanide Complexes, Preparation and Uses Thereof - The invention relates to compounds, to the complexes they form with a lanthanide, and to the use of the complexes for fluorescence marking or NMR imaging. | 2010-08-26 |
20100216253 | Organic Material-Immobiling Structure and Method for Production of the Same, and Peptide and DNA Therefor - The invention provides an organic material-immobilizing structure employing new immobilization means, characterized in that at least a part of the surface of the substrate is comprised of one or more members containing silicon oxide, the organic material is bound to the surface of the substrate through a binding domain bound to the organic material and containing an amino acid sequence capable of binding to silicon oxide, selected from the group consisting of amino acid sequences of SEQ ID NOS: 1 and 2: Val-Ser-Pro-Met-Arg-Ser-Ala-Thr-Thr-His-Thr-Val; and Ile-Pro-Met-His-Val-His-His-Lys-His-Pro-His-Val, and derivatives thereof. | 2010-08-26 |
20100216254 | DRUG MONITORING ASSAY - A method for obtaining at least one binding agent which binds a pharmaceutically active form of the compound with a higher specificity than a pharmaceutically inactive form of the compound is described by using special derivatives of said parent compound. The invention also pertains to the respectively created binding agents and derivatives. Furthermore, drug monitoring assays using said binding agents for monitoring pharmaceutically active forms of said parent compound are provided. | 2010-08-26 |
20100216255 | METHODS OF DETERMINING ACTIVE LEVELS OF DRUGS IN FLUID SAMPLES - Methods for determining the presence and level of active drugs in fluid samples are provided. Advantageously, entire families or classes of drugs can be tested for in one test by identifying the enzyme or receptor upon which members of that drug family act and measuring enzyme activity levels or binding activity levels of receptors. Methods for establishing standard activity levels of these drugs based upon results from samples having known quantities of drug therein are also provided. | 2010-08-26 |
20100216256 | NANOBELT-BASED SENSORS AND DETECTION METHODS - A biosensor is provided which includes a substrate, a source electrode on the substrate, a drain electrode on the substrate, and at least one functionalized nanobelt on a surface of the substrate between the source electrode and the drain electrode. Methods for sensing a biological or chemical analyte using the sensor is also provided. | 2010-08-26 |
20100216257 | Method of Assaying Antigen and Reagent Therefor - A latex agglutination method by which the measurement range is extended and the sensitivity of the measurement in the low concentration range is increased, is disclosed. The method for measuring a test antigen by latex agglutination uses two types of large and small particles, having different average particle sizes. Each latex particle is sensitized with an antibody which undergoes antigen-antibody reaction with the test antigen. The purity of the antibody immobilized on the latex particles is within a specific range. The ratio of the amount of the antibody immobilized per one small latex particle to the amount of the antibody immobilized per one large latex particle; the average particle size of the large latex particles; the average particle size of the small latex particles; the concentration of the large sensitized latex particles in the antigen-antibody reaction system; and the concentration of the small sensitized latex particles in the reaction system are within a specific range. The large sensitized latex particles and the small sensitized latex particles are reacted with the test antigen in the state suspended in a buffer, and then the agglutination of the sensitized latex particles is optically measured. | 2010-08-26 |
20100216258 | METHOD FOR MEASURING DOPANT CONCENTRATION DURING PLASMA ION IMPLANTATION - Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process. | 2010-08-26 |
20100216259 | WET PROCESSING SYSTEM, WET PROCESSING METHOD AND STORAGE MEDIUM - A wet processing system detects a globule of a process solution in a drippy or dripping state from the tip of any one of process solution pouring nozzles being moved to a pouring position for pouring the process solution onto a substrate by obtaining image data on the process solution pouring nozzle, and takes proper measures to prevent the process solution from dripping. A wet processing system | 2010-08-26 |
20100216260 | PLASMA ETCHING METHOD AND APPARATUS, AND METHOD OF MANUFACTURING LIQUID EJECTION HEAD - The plasma etching method includes: an etching step of placing, on a stage in a chamber, a substrate in which a prescribed mask pattern is formed by a protective film on a surface of a material to be etched, generating a plasma in the chamber while supplying processing gas to the chamber, and etching a portion of the material corresponding to an opening portion in the mask pattern; a voltage measurement step of, during the etching in the etching step, measuring a voltage at the surface of the material on a side where the mask pattern is formed, through a conductive member that is placed in contact with the surface of the material on the side where the mask pattern is formed; and a control step of controlling an etching condition in the etching step in accordance with a measurement result obtained in the voltage measurement step. | 2010-08-26 |
20100216261 | METHOD FOR IDENTIFYING AN INCORRECT POSITION OF A SEMICONDUCTOR WAFER DURING A THERMAL TREATMENT - An incorrect position of a semiconductor wafer during thermal treatment in a process chamber heated by means of infrared emitters and transmissive to infrared radiation is identified, wherein the semiconductor wafer lies in a circular pocket of a rotating susceptor and is held at a predetermined temperature with the aid of the infrared emitters and a control system, and wherein thermal radiation is measured by a pyrometer, an amplitude of the fluctuations of the measurement signal is determined and an incorrect position of the semiconductor wafer is assumed if the amplitude exceeds a predetermined maximum value. The pyrometer is oriented such that the measurement spot detected by the pyrometer lies partly on the semiconductor wafer and partly outside the semiconductor wafer on the susceptor so that it is possible to identify an eccentric position of the semiconductor wafer within the pocket of the susceptor. | 2010-08-26 |
20100216262 | METHOD FOR PRODUCING BONDED WAFER - Bonded wafers are produced by a method including a step (S | 2010-08-26 |
20100216263 | Method and Apparatus for Measuring Process Parameters of a Plasma Etch Process - Method and apparatus for measuring process parameters of a plasma etch process. A method for detecting at least one process parameter of a plasma etch process being performed on a semiconductor wafer. The method comprises the steps of detecting light being generated from the plasma during the etch process, filtering the detected light to extract modulated light; and processing the detected modulated light to determine at least one process parameter of the etch process. | 2010-08-26 |
20100216264 | METHOD OF MANUFACTURING A SUBSTRATE FOR A LIQUID DISCHARGE HEAD - A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of providing a layer on the second surface of the silicon substrate, wherein the layer has a lower etch rate than silicon when exposed to an etchant of silicon, partially removing the layer so as to expose part of the second surface of the silicon substrate, wherein the exposed part surrounds at least one part of the layer; and wet etching the layer and the exposed part of the second surface of the silicon substrate, using the etchant of silicon, to form a liquid supply port extending from the second surface to the first surface of the silicon substrate. | 2010-08-26 |
20100216265 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE DEVICE - A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified. | 2010-08-26 |
20100216266 | Pulsed high-voltage silicon quantum dot fluorescent lamp - In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light. | 2010-08-26 |
20100216267 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURE THEREOF - A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode. | 2010-08-26 |
20100216268 | MANUFACTURING METHOD OF A SEMICONDUCTOR ELEMENT - A method of manufacturing a semiconductor element of good characteristics at a reduced manufacturing cost is provided. The manufacturing method of the semiconductor element includes a GaN-containing semiconductor layer forming step, an electrode layer forming step, a step of forming an Al film on the GaN-containing semiconductor layer, a step of forming a mask layer made of a material of which etching rate is smaller than that of a material of the Al film, a step of forming a ridge portion using the mask layer as a mask, a step of retreating a position of a side wall of the Al film with respect to a position of a side wall of the mask layer, a step of forming, on the side surface of the ridge portion and the top surface of the mask layer, a protective film made of a material of which etching rate is smaller than that of the material forming the Al film, and a step of removing the Al film and thereby removing the mask layer and a portion of the protective film formed on the top surface of the mask layer. | 2010-08-26 |
20100216269 | ORGANIC EL ELEMENT AND ITS MANUFACTURING METHOD - There is provided an organic EL element having, between a positive electrode and a negative electrode, a lamination structure formed of organic films having a light emitting layer, a hole transport layer adjacent to a positive electrode side of the light emitting layer, and an electron transport layer adjacent to a negative electrode side of the light emitting layer. At least one of the organic films composing the lamination structure includes a metal element having reactivity to oxygen or water. | 2010-08-26 |
20100216270 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A method for manufacturing light emitting diode (LED) is revealed. By means of wet etching, a plurality of pyramids is formed on epitaxial structure. The depth of the pyramids is beyond a n-type semiconductor layer, reaching a p-type semiconductor layer. Thus light emitting directions of the LED made by the method of the present invention are increased. Therefore, the light emitting efficiency of LED is improved. | 2010-08-26 |
20100216271 | METHOD FOR FABRICATING LIGHT EMITTING DEVICE - Provided is a method for fabricating a light emitting device. The method comprises forming a gallium oxide layer, forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer, forming a conductive substrate on the second conductive type semiconductor layer, separating the gallium oxide layer, and forming a first electrode on the first conductive type semiconductor layer. | 2010-08-26 |
20100216272 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided. | 2010-08-26 |
20100216273 | METHOD FOR FABRICATING CARBON NANOTUBE ARRAY SENSOR - A method of fabricating a carbon nanotube array sensor includes the following steps. A carbon nanotube array, a first electrode and a second electrode are provided, the carbon nanotube array includes a plurality of carbon nanotubes. Each of the carbon nanotubes includes a first end and a second end opposite to the first end. A first metallophilic layer is formed on the first end of each of the carbon nanotubes. At least one first conductive metal layer is arranged between the first metallophilic layer and the first electrode to electrically connect each of the carbon nanotubes with the first electrode. A second metallophilic layer is formed on the second end of each of the carbon nanotubes. At least one second conductive metal layer is arranged between the second metallophilic layer and the second electrode to electrically connect each of the carbon nanotubes with the second electrode. | 2010-08-26 |
20100216274 | Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer - A method for making a tandem solar cell includes the steps of providing a ceramic substrate, providing a titanium-based layer on the ceramic substrate, providing an n | 2010-08-26 |
20100216275 | PHOTONIC INTEGRATION SCHEME - Provided is an apparatus and method for manufacture thereof. The apparatus includes a passive optical waveguide structure and a photodiode detector structure. The structures are located on a substrate, and the photodiode detector is laterally proximate to the semiconductor passive waveguide structure. The passive optical waveguide structure includes a first lateral portion of a semiconductor optical core layer on the substrate, a semiconductor upper optical cladding layer on the optical core layer, and a first lateral portion of a doped semiconductor layer on the upper optical cladding layer. The photodiode detector structure includes a second lateral portion of the semiconductor optical core layer, a semiconductor optical absorber layer on the optical core layer, and a second lateral portion of the doped semiconductor layer. | 2010-08-26 |
20100216276 | Method for Electrically Connecting Photovoltaic Cells in a Photovoltaic Device - A method is disclosed for simultaneously forming the reflector of a photovoltaic concentrator and the electrical connections between a plurality of photovoltaic cells. In some embodiments a method for producing a photovoltaic device is disclosed using triangular prisms to concentrate light onto silicon cells, thereby reducing the amount of photovoltaic silicon required for generation of electrical power from sunlight without reducing the amount of light accepted by the device. | 2010-08-26 |
20100216277 | Formation of Devices by Epitaxial Layer Overgrowth - Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer. | 2010-08-26 |
20100216278 | Method for making multi-cystalline film of solar cell - A method is disclosed for making a multi-crystalline silicon film of a solar cell. In the method, a titanium-based film is coated on a ceramic substrate. A back surface field layer is coated on the titanium-based film via providing dichlorosilane and diborane in an atmospheric pressure chemical vapor deposition process at a first temperature. A light-soaking layer is coated on the back surface field layer via providing more dichlorosilane and diborane in the atmospheric pressure chemical vapor deposition process at a second temperature higher than the first temperature. | 2010-08-26 |
20100216279 | METHOD OF A MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES - A method and structure of a bistable resistance random access memory comprise a plurality of programmable resistance random access memory cells where each programmable resistance random access memory cell includes multiple memory members for performing multiple bits for each memory cell. The bistable RRAM includes a first resistance random access member connected to a second resistance random access member through interconnect metal liners and metal oxide strips. The first resistance random access member has a first resistance value Ra, which is determined from the thickness of the first resistance random access member based on the deposition of the first resistance random access member. The second resistance random access member has a second resistance value Rb, which is determined from the thickness of the second resistance random access member based on the deposition of the second resistance random access member. | 2010-08-26 |
20100216280 | INTEGRATED CIRCUIT MICRO-MODULE - Various methods for forming an integrated circuit micro-module are described. In one aspect of the invention, layers of an epoxy are sequentially deposited over a substrate to form planarized layers of epoxy over the substrate. The epoxy layers are deposited using spin coating. At least some of the layers are photolithographically patterned after they are deposited and before the next epoxy layer is deposited. Openings are formed in at least some of the patterned epoxy layers after they are patterned and before the next epoxy layer is deposited. An integrated circuit is placed within one of the openings. At least one of the epoxy layers is deposited after the placement of the integrated circuit to cover the integrated circuit. At least one conductive interconnect layer is formed over an associated epoxy layer. Multiple external package contacts are formed. The integrated circuit is electrically connected with the external package contacts at least in part through one or more of the conductive interconnect layers. | 2010-08-26 |
20100216281 | Semiconductor Device and Method of Forming Through Vias with Reflowed Conductive Material - A semiconductor device is made by providing a first semiconductor wafer having semiconductor die. A gap is made between the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a first through hole via (THV). A conductive lining is conformally deposited in the first THV. A solder material is disposed above the conductive lining of the first THV. A second semiconductor wafer having semiconductor die is disposed over the first wafer. A second THV is formed in a gap between the die of the second wafer. A conductive lining is conformally deposited in the second THV. A solder material is disposed above the second THV. The second THV is aligned to the first THV. The solder material is reflowed to form the conductive vias within the gap. The gap is singulated to separate the semiconductor die. | 2010-08-26 |
20100216282 | LOW COST BONDING TECHNIQUE FOR INTEGRATED CIRCUIT CHIPS AND PDMS STRUCTURES - Methods of bonding a structure fabricated in polydimethylsiloxane (PDMS) and an integrated circuit chip. The procedures for bonding include providing a substrate, affixing the integrated circuit to the substrate, as needed preparing the surface of the integrated circuit chip to permit bonding, aligning the PDMS structure and the features of the integrated circuit chip, and applying a bonding agent. The bonding agent is cured by exposure to a thermal regime for a suitable length of time. Depending on relative sizes, in some cases, a plural number of PDMS structures can be attached to one chip, or a single PDMS structure can be bonded to multiple chips. In some cases, the integrated circuit chip operates wirelessly. In other situations, the substrate provides electrical communication from the integrated circuit chip to electronic components. | 2010-08-26 |
20100216283 | ELECTRONIC DEVICE AND LEAD FRAME - A lead frame facilitates the handling, positioning, attachment, and/or continued integrity of multiple dies, without the use of multiple separate parts, such as jumpers. The lead frame includes a number of structures, each of which is attached to at least one lead. At least one receiving surface, arranged to receive a die, is associated with each structure. When dies are disposed on the receiving surfaces, anodes are similarly-oriented. A number of fingers are attached to the lead frame, and one or more electrode contact surfaces are attached to each finger. Each electrode contact surface can be positioned (for example, bent) with respect to one receiving surface, to facilitate electrical connection between the anode of a die and a lead. The lead frame may be used in connection with surface- and through-hole-mountable electronic devices, such as bridge rectifier modules. | 2010-08-26 |
20100216284 | SEMICONDUCTOR MEMORY DEVICE - In a multiport SRAM memory cell of the present invention, an access transistor of a first port is disposed in a p-type well, and an access transistor of a second port is disposed in a p-type well. The gates of all of transistors disposed in a memory cell extend in the same direction. With the configuration, a semiconductor memory device having a low-power consumption type SRAM memory cell with an increased margin of variations in manufacturing, by which a bit line can be shortened in a multiport SRAM memory cell or an associative memory, can be obtained. | 2010-08-26 |
20100216285 | Method for Manufacturing Crystalline Semiconductor Film and Method for Manufacturing Thin Film Transistor - A crystalline semiconductor film is manufactured by a first step in which a crystalline semiconductor film is formed on and in contact with an insulating film and a second step in which the crystalline semiconductor film is grown in a condition where a generation frequency of nuclei is lower than in the first step. The second step is conducted in a condition where a flow ratio of a semiconductor material gas to a deposition gas is lower than in the first step. Thus, a crystalline semiconductor film whose crystal grains are large and uniform can be obtained and plasma damage to a base film of the crystalline semiconductor film can be reduced compared with a crystalline semiconductor film in a conventional method. | 2010-08-26 |
20100216286 | USE OF IN-SITU HCL ETCH TO ELIMINATE BY OXIDATION RECRYSTALLIZATION BORDER DEFECTS GENERATED DURING SOLID PHASE EPITAXY (SPE) IN THE FABRICATION OF NANO-SCALE CMOS TRANSISTORS USING DIRECT SILICON BOND SUBSTRATE (DSB) AND HYBRID ORIENTATION TECHNOLOGY (HOT) - A method for reducing defects at an interface between a amorphized, recrystallized cleaved wafer layer and an unamorphized cleaved wafer layer can comprise an anneal and an exposure to hydrochloric acid. The anneal and acid exposure can be performed within an epitaxial reactor chamber to minimize wafer transport. | 2010-08-26 |
20100216287 | METHOD FOR REMOVING HARD MASKS ON GATES IN SEMICONDUCTOR MANUFACTURING PROCESS - A method for removing hard masks on gates in a semiconductor manufacturing process is conducted as follows. First of all, a first gate and a second gate with hard masks are formed on a semiconductor substrate, wherein the second gate is larger than the first gate. The first gate and second gate could be associated with silicon-germanium (SiGe) source and drain regions to form p-type transistors. Next, a photoresist layer is deposited, and an opening of the photoresist layer is formed on the hard mask of the second gate. Then, the photoresist layer on the first and second gates is removed completely by etching back. Because there is no photoresist residue, the hard masks on the first and second gates can be removed completely afterwards. | 2010-08-26 |
20100216288 | Fabrication of Source/Drain Extensions with Ultra-Shallow Junctions - A method of forming an integrated circuit device includes providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a pre-amorphized implantation (PAI) by implanting a first element selected from a group consisting essentially of indium and antimony to a top portion of the semiconductor substrate adjacent to the gate structure. The method further includes, after the step of performing the PAI, implanting a second element different from the first element into the top portion of the semiconductor substrate. The second element includes a p-type element when the first element includes indium, and includes an n-type element when the first element includes antimony. | 2010-08-26 |
20100216289 | Method of fabricating semiconductor device having metal-semiconductor compound regions - Example embodiments relate to methods of fabricating a semiconductor device having a metal-semiconductor compound region. A method according to example embodiments may include forming semiconductor pillars on a semiconductor substrate. The semiconductor substrate between the semiconductor pillars may be etched to form a trench region. A dielectric isolation pattern partially filling the trench region may be formed, and dielectric sidewall spacers may be formed on sidewalls of the semiconductor pillars. Metal-semiconductor compound regions may be formed on sidewalls of a portion of the trench region that is not filled by the isolation pattern. | 2010-08-26 |
20100216290 | Method for forming semiconductor device - A method for forming semiconductor device, which simultaneously forms a trench MOS transistor device, and an embedded schottky barrier diode (SBD) device in a semiconductor substrate. The embedded SBD device has lower forward voltage drop, which reduces power dissipation. In addition, the voltage bearing ability may be modified easily by virtue of altering the dopant concentration or the width of the voltage bearing dopant region, or the thickness of epitaxial silicon layer. Furthermore, extra cost of purchasing SBD diode may be saved. | 2010-08-26 |
20100216291 | Methods of fabricating semiconductor devices and semiconductor devices including threshold voltage control regions - A semiconductor device includes a semiconductor substrate including isolation regions defining first and second active regions having a first and second conductivity type, respectively, first threshold voltage control regions in predetermined regions of the first active region, wherein the first threshold voltage control regions have the first conductivity type and a different impurity concentration from the first active region, a first gate trench extending across the first active region, wherein portions of side bottom portions of the first gate trench adjacent to the respective isolation region are disposed at a higher level than a central bottom portion of the first gate trench, and the first threshold voltage control regions remain in the first active region under the side bottom portions of the first gate trench adjacent to the respective isolation region, and a first gate pattern. Methods of manufacturing such semiconductor devices are also provided. | 2010-08-26 |
20100216292 | SEMICONDUCTOR DEVICE FOR REDUCING INTERFERENCE BETWEEN ADJOINING GATES AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate having an active region having a plurality of recessed channel areas extending across the active region and a plurality of junction areas also extending across the active region. Gates are formed in and over the recessed channel areas of the active region. A device isolation structure is formed in the semiconductor substrate to delimit the active region, and the device isolation structure has recessed portions, each of which is formed near a junction area of the active region. Landing plugs are formed over each junction area in the active region and extend to fill the recessed portion of the device isolation structure outside the active region. The semiconductor device suppresses interference caused by an adjoining gate leading to a decrease in leakage current from a cell transistor. | 2010-08-26 |
20100216293 | Method for Fabricating Semiconductor Devices - A method for fabricating a semiconductor device includes providing a semiconductor substrate including a memory cell region and peripheral circuit regions. Gate electrodes including gate conductive patterns and capping patterns are formed on the memory cell region and the peripheral circuit regions. An interlayer dielectric covering the gate electrodes is formed. The interlayer dielectric is patterned to form first contact holes exposing the semiconductor substrate along side of the gate electrode in the memory cell region and second contact holes exposing a portion of the capping pattern in the peripheral circuit region such that a bottom surface of the second contact hole is spaced apart from a top surface of the gate conductive pattern. A first plug conductive layer is filled in the first contact holes and a second plug conductive layer is filled in the second contact holes. A planarizing process is performed to expose the capping patterns such that first contact plugs are formed in the memory cell region and second contact plugs are formed in the peripheral circuit region. | 2010-08-26 |
20100216294 | METHOD OF FABRICATING A MICROELECTRONIC STRUCTURE INVOLVING MOLECULAR BONDING - Method of fabricating a microelectronic structure includes preparing a first structure having a first material different from silicon on a surface thereof and forming at least one covering layer of a second material by IBS (ion beam sputtering) and having a thickness of less than one micron, where the at least one cover layer has a free surface and molecular bonding the free surface to one face of a second structure where the at least one covering layer constitutes a bonding layer for the first and second structures. | 2010-08-26 |
20100216295 | SEMICONDUCTOR ON INSULATOR MADE USING IMPROVED DEFECT HEALING PROCESS - Methods and apparatus for producing a semiconductor on glass (SOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; subjecting the at least one cleaved surface to an amorphization ion implantation process at a dose sufficient to amorphize at least some depth of the semiconductor material below the at least one cleaved surface; and re-growing the amorphized portion of the semiconductor material into a substantially single crystalline semiconductor layer using solid phase epitaxial re-growth | 2010-08-26 |
20100216296 | Processing Method and Recording Medium - [Object] To provide a processing method capable of removing an oxide film adhering on a Si layer from the Si layer without adversely affecting parts other than the oxide film and capable of surely forming a SiGe layer with good film quality without roughening the crystal structure of a surface of the Si layer from which the oxide film has been removed, and to provide a recording medium. | 2010-08-26 |
20100216297 | METHODS FOR FABRICATING SEMICONDUCTOR DEVICE STRUCTURES - Methods for fabricating semiconductor device structures are disclosed. In some embodiments, methods for fabricating semiconductor device structures may comprising forming at least one raised element on a surface of a substrate, the at least one raised element of the plurality including sloped sides and a peak, aligning a strip comprising conductive material at least partially over the at least one raised element, and at least partially securing the strip to a surface of the at least one raised element and the surface of the substrate. | 2010-08-26 |
20100216298 | Method for growing Ge expitaxial layer on patterned structure with cyclic annealing - A Ge epitaxial layer is grown on a silicon substrate with a patterned structure. Through a cyclic annealing, dislocation defects are confined. The present invention provides a method for manufacturing a high-quality Ge epitaxial layer with a low cost and a simple procedure. The Ge epitaxial layer obtained can be applied to high mobility Ge devices or any lattice-mismatched epitaxy on a photonics device. | 2010-08-26 |
20100216299 | SUBSTRATE PREPARATION FOR ENHANCED THIN FILM FABRICATION FROM GROUP IV SEMICONDUCTOR NANOPARTICLES - A method for producing a thin film promoter layer is disclosed. The method includes depositing a Group IV semiconductor ink on a substrate, the Group IV semiconductor ink including a set of Group IV semiconductor nanoparticles and a set of metal nanoparticles to form a porous compact. The method also includes heating the substrate to a first temperature between about 350° C. to about 765° C. and for a first time period between 5 min to about 3 hours. | 2010-08-26 |
20100216300 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×10 | 2010-08-26 |
20100216301 | FABRICATING A DEVICE WITH A DIAMOND LAYER - In one aspect, a method includes forming a silicon dioxide layer on a surface of a diamond layer disposed on a gallium nitride (GaN)-type layer. The method also includes etching the silicon dioxide layer to form a pattern. The method further includes etching portions of the diamond exposed by the pattern. | 2010-08-26 |
20100216302 | Lead-free tin alloy electroplating compositions and methods - Disclosed are electrolyte compositions for depositing a tin alloy on a substrate. The electrolyte compositions include tin ions, ions of one or more alloying metals, a flavone compound and a dihydroxy bis-sulfide. The electrolyte compositions are free of lead and cyanide. Also disclosed are methods of depositing a tin alloy on a substrate and methods of forming an interconnect bump on a semiconductor device. | 2010-08-26 |
20100216303 | SEMICONDUCTOR DEVICE HAVING REINFORCED LOW-K INSULATING FILM AND ITS MANUFACTURE METHOD - A semiconductor device manufacture method has the steps of: (a) coating a low dielectric constant low-level insulating film above a semiconductor substrate formed with a plurality of semiconductor elements; (b) processing the low-level insulating film to increase a mechanical strength of the low-level insulating film; (c) coating a low dielectric constant high-level insulating film above the low-level insulating film; and (d) forming a buried wiring including a wiring pattern in the high-level insulating film and a via conductor in the low-level insulating film. The low-level insulating film and high-level insulating film are made from the same material. The process of increasing the mechanical strength includes an ultraviolet ray irradiation process or a hydrogen plasma applying process. | 2010-08-26 |
20100216304 | METHOD FOR FORMING TI FILM AND TIN FILM, CONTACT STRUCTURE, COMPUTER READABLE STORAGE MEDIUM AND COMPUTER PROGRAM - A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H. | 2010-08-26 |
20100216305 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a ruthenium (Ru) film at least on a bottom surface of the opening; and filling in the opening with a tungsten (W) film in which the Ru film is formed, according to a chemical vapor deposition (CVD) method by hydrogen (H | 2010-08-26 |
20100216306 | PROTECTION OF CONDUCTORS FROM OXIDATION IN DEPOSITION CHAMBERS - In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited material can be a metal nitride, e.g., a transition metal nitride such as titanium metal nitride. As part of the preparation for unloading substrates from the chamber, the substrates may be cooled and the chamber is backfilled with a reducing gas to increase the chamber pressure. It has been found that oxidants can be introduced into the chamber during this time. The introduction of a reducing gas has been found to protect exposed metal-containing films from oxidation during the backfill and/or cooling process. The reducing gas is formed of a reducing agent and a carrier gas, with the reducing agent being a minority component of the reducing gas. By providing a reducing agent, the effects of oxidation on exposed metal-containing films is reduced, therefore enhancing the conductive properties of the metal films. | 2010-08-26 |
20100216307 | SIMPLIFIED PITCH DOUBLING PROCESS FLOW - A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material. | 2010-08-26 |
20100216308 | METHOD FOR ETCHING 3D STRUCTURES IN A SEMICONDUCTOR SUBSTRATE, INCLUDING SURFACE PREPARATION - A method is provided for producing 3D structures in a semiconductor substrate using Deep Reactive Ion Etching (DRIE), comprising at least the steps of: providing a substrate, and then grinding the backside of the substrate in order to achieve a thinned substrate, wherein extrusions and native oxides are left after said grinding step, and then performing a surface treatment selected from the group consisting of a wet etching step and a dry etching step in order to remove at least said native oxides and extrusions on the surface of said backside of the substrate which are causes for the grass formation during subsequent etching, and then performing deep reactive ion etching in order to achieve 3D vias. | 2010-08-26 |
20100216309 | CMP POLISHING LIQUID AND METHOD FOR POLISHING SUBSTRATE USING THE SAME - Disclosed is a CMP polishing liquid for polishing a substrate having a layer containing ruthenium, comprising: an oxidizing agent; polishing particles; water; and a compound having a structure represented by the following Formula (1), or a salt thereof. This CMP liquid is improved in at least the polishing rate to a ruthenium layer when compared with conventional polishing liquid. Also disclosed is a method for polishing a substrate using such a CMP polishing liquid. | 2010-08-26 |
20100216310 | Process for etching anti-reflective coating to improve roughness, selectivity and CD shrink - A method of dry developing an anti-reflective coating (ARC) layer on a substrate is described. The method comprises disposing a substrate comprising a multi-layer mask in a plasma processing system, wherein the multi-layer mask comprises a lithographic layer overlying a silicon-containing ARC layer and wherein the lithographic layer comprises a feature pattern formed therein using a lithographic process. The method further comprises: introducing a process gas to the plasma processing system according to a process recipe, the process gas comprising a nitrogen-containing gas, a hydrogen-containing gas, and a C | 2010-08-26 |
20100216311 | Trench forming method - A trench forming method for forming trenches without creating gouges at the boundary between a masking oxide film and a semiconductor layer and at the boundary between an oxide film insulating layer and the semiconductor layer, includes at least three etching steps each using, as the etching gas, one of at least two types of etching gases that respectively contain different components. | 2010-08-26 |
20100216312 | RESIST REMOVING METHOD, SEMICONDUCTOR MANUFACTURING METHOD, AND RESIST REMOVING APPARATUS - This invention provides a resist removing apparatus for removing a resist comprising a deteriorated layer and an undeteriorated layer from a substrate. The apparatus carries out the step of bringing radicals, reduced by subjecting any one of or a mixture of two or more of nitrogen, oxygen, hydrogen, and steam to plasma treatment under a low pressure, into contact with the substrate to remove the resist, and the step of bringing ozone water into contact with the substrate to remove the resist. In the step of removing the resist by radicals, a large part of the undeteriorated layer is allowed to remain by regulating the radical contact time depending upon conditions for the formation of the deteriorated layer on the resist surface. Alternatively, a large part of the undeteriorated layer may be allowed to remain by conducting process control according to the results of analysis of a reactant gas discharged during the removal of the resist. | 2010-08-26 |
20100216313 | PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member. | 2010-08-26 |