34th week of 2010 patent applcation highlights part 13 |
Patent application number | Title | Published |
20100213410 | AQUEOUS FUNCTIONAL FLUIDS WITH ANTIOXIDANTS - The present invention relates to an aqueous functional fluid comprising an antioxidant of the hindered phenol type and a water-soluble polyalkylene glycol. The aqueous functional fluids are especially suitable for use as hydraulic or metal working fluids. The present invention also relates to the use of the aqueous functional fluid for improving the performance properties of hydraulic or metal working fluids. | 2010-08-26 |
20100213411 | MONOLITH SEPARATION MEDIUM FOR CHROMATOGRAPHY AND PROCESS FOR PRODUCING THE SAME - To obtain a non-particle-aggregation-type organic polymer monolith separation medium, there is provided a monolith separation medium comprising a skeletal phase and pores being continuous in the form of three-dimensional network, which skeletal phase on its surface has a functional group permitting introduction of a new functional group. The skeletal phase has a non-particle-aggregation-type co-continuous structure having an average diameter of submicron to micrometer size, and is constituted of an addition polymer from an epoxy compound of bi- or higher functionality and an amine compound of bi- or higher functionality. Further, the skeletal phase is enriched in organic matter and does not contain any carbon atoms derived from aromatic series. | 2010-08-26 |
20100213412 | Method Of Synthesizing Zirconium Phosphate Particles - Zirconium phosphate particles are synthesized by providing a solution of zirconium oxychloride in an aqueous solvent, adding at least one oxygen-containing additive to the solution, the oxygen-containing additive being selected to form a complex with zirconium ions in the solution of zirconium oxychloride and thereby reduce hydration of the zirconium ions, and combining this solution with phosphoric acid or a phosphoric acid salt to obtain zirconium phosphate particles by sol gel precipitation. | 2010-08-26 |
20100213413 | SEEDING RESINS FOR ENHANCING THE CRYSTALLINITY OF POLYMERIC SUBSTRUCTURES - The present invention provides for a resin mixture that comprises a highly structured resin | 2010-08-26 |
20100213414 | GREEN PHOSPHOR AND PLASMA DISPLAY PANEL - A green phosphor represented by Formula (A | 2010-08-26 |
20100213415 | METAL OXIDE FINE PARTICLES, SILICONE RESIN COMPOSITION AND USE THEREOF - The present invention relates to metal oxide fine particles treated with a surface-treating agent containing a silicon compound having an alkenyl group having 2 to 20 carbon atoms, a silicone resin composition obtained by reacting the metal oxide fine particles with an organohydrogensiloxane, a photo semiconductor element-encapsulating material containing the silicone resin composition, and a photosemiconductor device including a photosemiconductor element encapsulated with the silicone resin composition or the photosemiconductor element-encapsulating material. | 2010-08-26 |
20100213416 | Solvent - An organic solvent which is very useful in paints is made up primarily of n-butyl acetate, n-heptane, methyl ethyl ketone, methyl isobutyl ketone, acetone and a light hydrotreated petroleum distillate. The solvent typically has a closed cup flash point of about 50 to 75° F. The petroleum distillate typically has a boiling range from 230 to 320° F., a closed cup flash point from 35 to 75° F. and a kauri-butanol value not less than 25. A mixture of 8-carbon and 9-carbon hydrocarbons which are typically primarily paraffins or cycloparaffins typically makes up the vast majority of the petroleum distillate. | 2010-08-26 |
20100213417 | Process and catalyst for hydrocarbon conversion - A process for the conversion of hydrocarbons to hydrogen and one or more oxides of carbon, comprising contacting the hydrocarbon with steam and/or oxygen in the presence of a spinel-phase crystalline catalyst comprising a catalytically active metal. There is also described a method for making a catalyst suitable for the conversion of hydrocarbons to hydrogen and one or more oxides of carbon comprising adding a precipitant to a solution or suspension of a refractory oxide or precursor thereof and a catalyst metal-containing compound to form a precipitate which is calcined in an oxygen-containing atmosphere to produce a crystalline phase with a high dispersion of catalyst metal. There is further described a crystalline catalyst comprising the elements nickel, magnesium, aluminium and a lanthanide element, in which the crystalline phase is a spinel phase. | 2010-08-26 |
20100213418 | Method Of Starting A Fuel Processor - In methods for starting a fuel processor, the equivalence ratio of reactants supplied to the fuel processor is controlled in a step-wise procedure to rapidly heat the fuel processor, and optionally sustain it within a desired temperature range until a hydrogen-containing gas stream is needed. | 2010-08-26 |
20100213419 | CARBON NANOTUBE ARRAYS - A carbon nanotube array includes a plurality of carbon nanotubes and at least one line mark formed on the carbon nanotubes. The carbon nanotubes have a top end and a bottom end. The at least one line mark is formed on the carbon nanotubes. The at least one line mark transversely extends across the carbon nanotubes, and is located between the top end and the bottom end. The at least one line mark is spaced from the top and bottom ends. | 2010-08-26 |
20100213420 | FINE PARTICLE COMPOSITE, METHOD FOR PRODUCING THE SAME, CATALYST USED FOR SOLID POLYMER FUEL CELL, AND SOLID POLYMER FUEL CELL - This invention provides a fine particle composite comprising fine particles of a sulfide or sulfide complex comprising at least one element selected from the group consisting of molybdenum (Mo), rhodium (Rh), ruthenium (Ru), and rhenium (Re) and conductive fine particles via a step of preparing a solvent mixture from a compound containing conductive carbon powder, at least one compound containing an element selected from among molybdenum (Mo), rhodium (Rh), ruthenium (R), and rhenium (Re), and sulfur (S) and a step of conducting a hydrothermal or solvothermal reaction at a pressure and temperature that convert the solvent mixture into a supercritical or subcritical water or solvent. | 2010-08-26 |
20100213421 | Diketopyrrolopyrrole Cocrystals - The invention relates to cocrystals of compounds of the formulae (I), (II) and (III), obtainable by reacting 1 mol of a succinic diester with 2 mol of a mixture of nitriles A-CN and B-CN, where A-CN and B-CN are present in the nitrile mixture in a molar ratio of 90:10 to 30:70 relative to one another, and where A-CN is 2-chlorobenzonitrile and B-CN is 4-X-benzonitrile where X=chlorine, methyl or nitrile. | 2010-08-26 |
20100213422 | UV CURABLE PHOTOCHROMIC COMPOSITION AND PRODUCTS FORMED BY USING THE SAME - The present invention relates to a UV curable photochromic composition comprising a photochromic dye and an acrylate-based prepolymer having a polyol structure in which an acrylate-based functional group is introduced by using an iso-cyanate-based compound having two or more isocyanate functional groups as a linker, and to products formed by using the same. | 2010-08-26 |
20100213423 | ALIGNMENT MATERIAL COMPOSITION AND ALIGNMENT LAYER - An alignment material composition including an alignment material, an ultraviolet absorbent, a light stabilizer and a solvent is provided. The ultraviolet absorbent has a formula 1 shown as below: | 2010-08-26 |
20100213424 | Releasable Pry bar - An apparatus for releasably attaching a pushing tool to one work piece such that a pushing force can be applied to a second work piece and allow alignment of the two work pieces for joining the work pieces together. | 2010-08-26 |
20100213425 | POST REMOVAL DEVICE - A post removal device ( | 2010-08-26 |
20100213426 | Deformable Drive Sheave - Drive sheaves are disclosed herein. An embodiment of a drive sheave includes a tire portion wherein the tire portion comprises an inner circumferential surface and an outer circumferential surface. The tire portion also includes a first surface extending between the inner circumferential surface and the outer circumferential surface and a second surface extending between the inner circumferential surface and the outer circumferential surface, the second surface being oppositely disposed relative to the first surface. At least one hole in the tire portion extends between the first surface and the second surface. | 2010-08-26 |
20100213427 | ADJUSTABLE JACK MOUNT - A mounting adapter for mounting a jack to a trailer coupler and/or a trailer frame is described. The mounting adapter may permit the jack to mount to the trailer coupler while retaining both vertical and axial adjustability. The mounting adapter may include a flange and a collar. The flange may include an opening for receiving the jack and at least one mounting aperture for attachment with the trailer frame. The collar may extend outward from the flange and have at least one aperture for attachment with the jack. The collar may also include a rib located for engagement with a slot on the jack. The trailer coupler and frame may include apertures alignable to the mounting apertures, whereby the mounting apertures may permit orientation of the jack to be forward, left, right or rear facing. The mounting adapter may also be vertically adjustable to the jack. | 2010-08-26 |
20100213428 | AUTOMOBILE JACKING SYSTEM - The present invention relates to an automated jacking system for lifting an automobile comprising: a plurality of mounted jacks, wherein each mounted jack includes an I-shaped assembly; a control means; and an activation means. Each mounted jack is firmly attached to each end of each axle of the automobile. The control means may include either a control panel within the interior of the automobile or a remote handheld control device. The activation means includes a motor on each mounted jack, wherein each mounted jack includes a base, a mounting bracket and a cylindrical body. The cylindrical body connects the mounting bracket to the base. A plurality of bolts firmly attaches each mounted jack to the respective axle. The mounted jacks according to the present invention may use either pneumatic or hydraulic means of power within the cylindrical body. | 2010-08-26 |
20100213429 | JACK ASSEMBLY WITH MULTIPLE DEGREES OF FREEDOM - A jack assembly having multiple degrees of freedom is described. The jack assembly may provide the user the ability to select single degrees of freedom as desired. The jack assembly may include a pair of jacks, a connecting rod assembly, and a pivot adapter. The jacks may be engaged with a trailer and are adjustable along a Z-axis. The jacks may include an outer tube in a telescopic relationship with an inner tube and a drop leg in a telescopic relationship with the inner tube. The connecting rod assembly may be located between the jacks and be adjustable along an X-axis. The pivot adapter may be capable of pivoting the jacks in a Y-Z plane. The adapter may include a first end secured to an end of the connecting rod assembly and a second end secured to one of the jacks. | 2010-08-26 |
20100213430 | FLOOR-BOUND TRANSPORTATION VEHICLE, IN PARTICULAR FOR THE TRANSPORTATION OF CONTAINERS - The invention relates to a floor-bound transportation vehicle for the transportation of containers, with at least one lifting platform which is arranged on a vehicle frame of the transportation vehicle and can be lifted from a lowered transportation position into a raised transfer position via a lifting drive and, conversely, can be lowered. The lifting platform is fastened on the vehicle frame via at least one toggle lever. The lifting platform can be raised or can be lowered via the at least one toggle lever. The lifting drive acts on the at least one toggle lever, and the lifting platform is guided on the transportation vehicle for the lifting and lowering movement. | 2010-08-26 |
20100213431 | Treated Chalcogenide Layer for Semiconductor Devices - A phase change memory and a method of manufacture are provided. The phase change memory includes a layer of phase change material treated to increase the hydrophobic nature of the phase change material. The hydrophobic nature of the phase change material improves adhesion between the phase change material and an overlying mask layer. The phase change material may be treated, for example, with a plasma comprising N | 2010-08-26 |
20100213432 | PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF - A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer. | 2010-08-26 |
20100213433 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device includes memory cells, each of which is arranged at an intersection between a first wiring and a second wiring intersecting each other. Each of the memory cells includes: a first electrode layer; a plurality of variable resistance layers laminated on the first electrode layer and functioning as variable resistance elements; a second electrode layer formed between the variable resistance layers; and a third electrode layer formed on the top one of the variable resistance layers. Each of the variable resistance layers is composed of a material containing carbon. | 2010-08-26 |
20100213434 | METHOD OF SYNTHESIZING NANOWIRES - A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method. | 2010-08-26 |
20100213435 | SWITCHING DEVICE AND NONVOLATILE MEMORY DEVICE - A switching device includes: a first layer including a carbon material having a six-member ring network structure; a first electrode electrically connected to a first portion of the first layer; a second electrode electrically connected to a second portion of the first layer and provided apart from the first electrode; a third electrode including a fourth portion provided opposing a third portion between the first portion and the second portion of the first layer; and a second layer provided between the third portion of the first layer and the fourth portion of the third electrode. The second layer includes: a base portion; and a functional group portion. The functional group portion is provided between the base portion and the first layer. The functional group portion is bonded to the base portion. A ratio of sp | 2010-08-26 |
20100213436 | NON-POLAR ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING SAME - An ultra-violet light-emitting device and method for fabricating an ultraviolet light emitting device, | 2010-08-26 |
20100213437 | LIGHT EMITTING DEVICE - The present invention provides a light emitting device that comprises a luminescent layer formed of a monomolecular film of quantum dots and has enhanced brightness and luminescence efficiency. A light emitting device | 2010-08-26 |
20100213438 | QUANTUM DOT LIGHT EMITTING DEVICE HAVING QUANTUM DOT MULTILAYER - A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer. | 2010-08-26 |
20100213439 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 2010-08-26 |
20100213440 | Silicon-Quantum-Dot Semiconductor Near-Infrared Photodetector - A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response. | 2010-08-26 |
20100213441 | Modulation-doped halos in quantum well field-effect transistors, apparatus made therewith, and methods of using same - A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device includes InGaAs bottom and top barrier layers respectively below and above the QW layer. The semiconductive device also includes a high-k gate dielectric layer that sits on the InP spacer first layer in a gate recess. A process of forming the QW layer includes using an off-cut semiconductive substrate. | 2010-08-26 |
20100213442 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device comprising an organic semiconductor element A and an organic semiconductor element B, wherein
| 2010-08-26 |
20100213443 | Oled devices - An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer. | 2010-08-26 |
20100213444 | ORGANIC SEMICONDUCTOR AND ORGANIC THIN-FILM TRANSISTOR - To provide an organic semiconductor of tetrathiafulvalene derivative and an organic thin-film transistor formed therefrom, the tetrathiafulvalene derivative being readily formed into a stable thin film and the organic thin-film transistor having a high mobility and being driven at a low threshold voltage, an organic semiconductor includes a hexamethylenetetrathiafulvalene compound represented by the formula (1) below, and an organic thin-film transistor having a thin film obtained therefrom | 2010-08-26 |
20100213445 | PHOSPHORESCENT POLYMER COMPOUNDS AND ORGANIC ELECTROLUMINESCENT DEVICES MANUFACTURED THEREWITH - A phosphorescent polymer compound has high luminance efficiency and long life. An organic electroluminescent device includes the compound. The phosphorescent polymer compound includes structural units that are derived from a compound represented by Formula (1): wherein R1 to R8 are each independently a hydrogen atom, a halogen atom, a cyano group, an alkyl group, an aryl group, a heteroaryl group, an amino group optionally substituted with an alkyl group, an alkoxy group, a silyl group optionally substituted with an alkyl group, or a group having a radically polymerizable functional group, and one of R1 to R8 is a group having a radically polymerizable functional group; and L is a ligand with a specific five-membered ring structure, and the two ligands L may be the same or different from each other. | 2010-08-26 |
20100213446 | BUFFER BILAYERS FOR ELECTRONIC DEVICES - The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer. The second layer is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals. | 2010-08-26 |
20100213447 | VERTICAL ORGANIC TRANSISTOR, METHOD FOR MANUFACTURING THE VERTICAL ORGANIC TRANSISTOR, AND LIGHT EMITTING ELEMENT - This invention provides a vertical organic transistor that can realize large current modulation and a reduction in production cost, and a method for manufacturing the vertical organic transistor. The vertical organic transistor comprises an upper electrode, a lower electrode, an organic semiconductor provided between both the electrodes, and an intermediate electrode provided within the organic semiconductor, the intermediate electrode being a layered continuous body comprising a continuous insulating metal compound and particulate metals distributed within the insulating metal compound. | 2010-08-26 |
20100213448 | METHOD OF PRODUCING A SINGLE-CRYSTAL THIN FILM OF AN ORGANIC SEMICONDUCTOR COMPOUND - A method of producing a single-crystal thin film of an organic semiconductor compound, which contains the steps of: applying an organic solvent which has a dielectric constant of 4.5 or greater and in which an organic semiconductor compound is soluble, on a substrate, to form a liquid film of the organic solvent on the substrate; supplying the organic semiconductor compound into the liquid film of the organic solvent, to dissolve therein; and crystallizing the organic semiconductor compound in the organic solvent. | 2010-08-26 |
20100213449 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND PRODUCTION METHOD THEREOF - The present invention provides an organic electroluminescent display device including an electroluminescent element with a reduced leakage current and also provides a production method thereof. The present invention is an organic electroluminescent display device including an electroluminescent element,
| 2010-08-26 |
20100213450 | PHOSPHOR ELEMENT AND DISPLAY DEVICE - A phosphor element is provided with a first electrode and a second electrode. The electrodes are arranged to face each other, and at least one of the electrodes is transparent or semi-transparent. The phosphor element is also provided with a phosphor layer, which is sandwiched between the first electrode and the second electrode and has phosphor particles dispersed in a medium made of a hole transport material. Conductive nano particles are held on the surface of each of the phosphor particles. | 2010-08-26 |
20100213451 | EMISSIVE POLYMERS AND DEVICES INCORPORATING THESE POLYMERS - The present invention relates to a class of luminescent and conductive polymer compositions having chromophores, and particularly solid films of these compositions exhibiting increased luminescent lifetimes, quantum yields and amplified emissions. These desirable properties can be provided through polymers having rigid groups designed to prevent polymer reorganization, aggregation or π-stacking upon solidification. These polymers can also display an unusually high stability with respect to solvent and heat exposures. The invention also relates to a sensor and a method for sensing an analyte through the luminescent and conductive properties of these polymers. Analytes can be sensed by activation of a chromophore at a polymer surface. Analytes include aromatics, phosphate ester groups and in particular explosives and chemical warfare agents in a gaseous state. The present invention also relates to devices and methods for amplifying emissions by incorporating a polymer having an energy migration pathway and/or providing the polymer as a block co-polymer or as a multi-layer. | 2010-08-26 |
20100213452 | AMBIPOLAR HOST IN ORGANIC LIGHT EMITTING DIODE - Some embodiments provide a compound represented by Formula 1: | 2010-08-26 |
20100213453 | AMBIPOLAR HOST IN ORGANIC LIGHT EMITTING DIODE - Some embodiments provide a compound represented by Formula 1: | 2010-08-26 |
20100213454 | PROCESS AND MATERIALS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME - There is provided a process for forming a contained second layer over a first layer. The process comprises forming the first layer having a first surface energy and then treating the first layer with a photocurable surface-active composition which is a fluorinated ester or fluorinated imide of an α,β-unsaturated polyacid; exposing the photocurable surface-active composition patternwise with radiation resulting in exposed areas and unexposed areas; developing the photocurable surface-active composition to remove the unexposed areas resulting in a first layer having untreated portions in the unexposed areas and treated portions in the exposed areas, where the treated portions have a second surface energy that is lower than the first surface energy; and forming the second layer on the untreated portions of the first layer. There is also provided an organic electronic device made by the process. | 2010-08-26 |
20100213455 | CONDUCTING FORMULATION - The invention relates to novel formulations comprising an organic semiconductor (OSC) and a conductive additive, to their use as conducting inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells, to methods for preparing OE devices using the novel formulations, and to OE devices and OPV cells prepared from such methods and formulations. | 2010-08-26 |
20100213456 | Organic Electroluminescence Display Device - An organic electroluminescence display device is disclosed wherein plural organic electroluminescence elements each having an anode, a cathode and an organic layer sandwiched in between the anode and the cathode, the plural organic electroluminescence elements including organic electroluminescence elements developing different colors in a row direction, and at least one of the organic layers having an outer edge of a conic section at an end portion in a column direction thereof, the outer edge of the conic section becoming narrower gradually in its width in a row direction of vapor deposition thereof toward an extreme end at an end portion in a column direction thereof. The organic electroluminescence display device can improve the vapor deposition accuracy and the degree of design freedom. | 2010-08-26 |
20100213457 | Light-Emitting Element, Light-Emitting Device, and Electronic Device - A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention. | 2010-08-26 |
20100213458 | RIGID SEMICONDUCTOR MEMORY HAVING AMORPHOUS METAL OXIDE SEMICONDUCTOR CHANNELS - Rigid semiconductor memory using amorphous metal oxide semiconductor channels are useful in the production of thin-film transistor memory devices. Such devices include single-layer and multi-layer memory arrays of volatile or non-volatile memory cells. The memory cells can be formed to have a gate stack overlying an amorphous metal oxide semiconductor, with amorphous metal oxide semiconductor channels. | 2010-08-26 |
20100213459 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS USING THE SAME - A transistor is constituted of a gate electrode | 2010-08-26 |
20100213460 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented. | 2010-08-26 |
20100213461 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for forming a thin film transistor includes steps of forming a first wiring layer over a first electrode layer and forming a second wiring layer over a second electrode layer, wherein the first electrode layer extends beyond an end portion of the first wiring layer, the second electrode layer extends beyond an end portion of the second wiring layer, and a semiconductor layer is formed so as to be electrically connected to a side face and a top face of the first electrode layer and a side face and a top face of the second electrode layer. | 2010-08-26 |
20100213462 | METAL OXIDE STRUCTURE AND METHOD FOR PRODUCING THE SAME, AND LIGHT-EMITTING ELEMENT - A method for producing a metal oxide structure, including: forming a layer containing metal acetate hydrate on a sapphire substrate; subjecting the layer containing the metal acetate hydrate to an insolubilization treatment; and immersing the sapphire substrate having the insolubilized layer in a reaction solution containing a metal ion and an NH | 2010-08-26 |
20100213463 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array substrate and a method for manufacturing the thin film transistor array substrate are disclosed. Specifically, a thin film transistor array may be formed using a reduced number of masks. | 2010-08-26 |
20100213464 | ACTIVE MATRIX ARRAY STRUCTURE - An active matrix array structure, disposed on a substrate, includes a first patterned conductive layer, a patterned gate insulating layer, a patterned semiconductor layer, a second patterned conductive layer, a patterned overcoat layer and a transparent conductive layer. The patterned gate insulating layer has first openings that expose a part of the first patterned conductive layer. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The second patterned conductive layer is disposed on the patterned semiconductor layer. The patterned overcoat layer has second openings that expose a part of the first patterned conductive layer and a part of the second patterned conductive layer. The transparent conductive layer is completely disposed on the substrate. The transparent conductive layer disposed in the first openings and the second openings is broken off at a position that is in between the substrate and the patterned overcoat layer. | 2010-08-26 |
20100213465 | SEMICONDUCTOR COMPONENT - A semiconductor component is provided having a substrate and at least one semiconductor layer realized to be polycrystalline on one side of the substrate. The polycrystalline semiconductor layer contains the crystal nuclei. | 2010-08-26 |
20100213466 | PHOTOSENSORS INCLUDING SEMICONDUCTOR-ON-INSULATOR STRUCTURE - Photosensor based on SOI technology and display devices comprising the same. The photosensor can be a photodiode or a phototransistor, or a combination thereof when incorporated in a device. The photosensor exhibits a higher photoresponse than a traditional photosensor based on amorphous silicon film or polysilicon thin film technology. The present invention is useful, e.g., in making multifunctional display devices having photosensing function integrated therein. | 2010-08-26 |
20100213467 | DIRECT BANDGAP SUBSTRATES AND METHODS OF MAKING AND USING - An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor LED such as to provide an active matrix LED array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors. Applications can include display technologies, light detection, MEMS, chemical sensors, or piezoelectric systems. An LED array can provide structured illumination, such as for a light and pattern source for projection displays, such as without requiring spatial light modulation (SLM). An example can combine light from separate monolithic light projector chips, such as providing different component colors. An example can provide full color from a single monolithic light projector chip, such as including selectively deposited phosphors, such as to contribute individual component colors to an overall color of a pixel. | 2010-08-26 |
20100213468 | LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME - Disclosed is a light emitting device having a plurality of light emitting cells. The light emitting device comprises a thermally conductive substrate, such as a SiC substrate, having a thermal conductivity higher than that of a sapphire substrate. The plurality of light emitting cells are connected in series on the thermally conductive substrate. Meanwhile, a semi-insulating buffer layer is interposed between the thermally conductive substrate and the light emitting cells. For example, the semi-insulating buffer layer may be formed of AlN or semi-insulating GaN. Since the thermally conductive substrate having a thermal conductivity higher than that of a sapphire substrate is employed, heat-dissipating performance can be enhanced as compared with a conventional sapphire substrate, thereby increasing the maximum light output of a light emitting device that is driven under a high voltage AC power source. In addition, since the semi-insulating buffer layer is employed, it is possible to prevent an increase in a leakage current through the thermally conductive substrate and between the light emitting cells. | 2010-08-26 |
20100213469 | ILLUMINATION DEVICE - An illumination device having a plurality of light emitting diodes is provided. The light emitting diode may include a plurality of semiconductor layers at least one of which has a light emitting surface which may include a rough surface pattern having a pre-determined pattern. The pre-determined pattern may include one or more impurity regions with each region having a recess for guiding current across the light emitting surface and maximizing the emission of light (i.e. light intensity) of the illumination device. Each recess may include a lower internal portion having a bottom contact point located on a bottom surface and an upper internal portion integrally connected to the lower internal portion by a plurality of center contact points. The gaps created between the center and bottom contact points in adjacent recesses may act as spark gaps allowing for the current to flow through the entire light emitting surface. | 2010-08-26 |
20100213470 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - At least part of a semiconductor layer or a semiconductor substrate includes a semiconductor region having a large energy gap. The semiconductor region having a large energy gap is preferably formed from silicon carbide and is provided in a position at least overlapping with a gate electrode provided with an insulating layer between the semiconductor region and the gate electrode. By making a structure in which the semiconductor region is included in a channel formation region, a dielectric breakdown voltage is improved. | 2010-08-26 |
20100213471 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device reliably supplying electric power to a light-emitting element on a supporting base and securing heat dissipation, and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a light-emitting element arranged on a first supporting base; a package covering the first supporting base and the light-emitting element therewith, and supporting the first supporting base; and a thermal conductive member having ends which are bonded to the light-emitting element and the package, respectively, so as to also have a wiring function. | 2010-08-26 |
20100213472 | Photo-gating Switch System - A photo-gating switch system comprising a photosensitive device formed on a substrate is provided. The photosensitive device may comprise a photosensitive layer and electrodes formed at both ends of the photosensitive layer. A light source irradiating light to the photosensitive device is integrated beneath the surface of the substrate. | 2010-08-26 |
20100213473 | PHOTON-BASED MEMORY DEVICE - An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel. | 2010-08-26 |
20100213474 | ARRAY-TYPE LIGHT-EMITTING DEVICE AND APPARATUS THEREOF - The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply. | 2010-08-26 |
20100213475 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes a package main body with a cavity, a plurality of light emitting diode chips, a wire, and a plurality of lead frames. The plurality of light emitting diode chips are mounted in the cavity. The wire is connected to an electrode of at least one light emitting diode chip. The plurality of lead frames are formed in the cavity, and at least one lead frame is electrically connected to the light emitting diode chip or a plurality of wires. | 2010-08-26 |
20100213476 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. The method of manufacturing a group-III nitride compound semiconductor light-emitting device includes: a pre-process of performing plasma processing on a substrate ( | 2010-08-26 |
20100213477 | Light Emitting Apparatus - A light emitting apparatus may include a gate metal positioned between a p-type contact and an n-type contact, a gate oxide or other dielectric stack positioned below and attached to the gate metal, a Ge or Si | 2010-08-26 |
20100213478 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device is provided. The semiconductor light-emitting device comprises a plurality of compound semiconductor layers, an electrode layer, and a conductive support member. The compound semiconductor layers comprise a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The electrode layer is disposed under the compound semiconductor layers. The conductive support member is disposed under the electrode layer. Herein, the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer. | 2010-08-26 |
20100213479 | LIGHT EMITTING DIODE PACKAGE STRUCTURE - A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a highly thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The highly thermal-conductive transparent liquid fills up the sealed space. | 2010-08-26 |
20100213480 | LENS FOR LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE PACKAGE HAVING THE SAME - A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface. | 2010-08-26 |
20100213481 | LIGHT EMITTING DEVICE - A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer disposed under the active layer and a second conductive semiconductor layer disposed under the active layer; a trench formed in a portion of the light emitting structure; a current barrier layer in the trench and configured to hinder current supply to the active layer at a portion where the trench is located and to block the active layer over the trench from emitting light; and a first electrode on the first conductive semiconductor layer above the portion where the trench is located. | 2010-08-26 |
20100213482 | TOP EMISSION INVERTED ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A top emission inverted OLED device is disclosed. The a top emission inverted OLED device includes: first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate; at least one thin film transistor formed on the light generation area; a passivation layer formed to cover the thin film transistor on the metal substrate and include contact holes which partially expose the thin film transistor and the first and second pad portions; a stacked pattern of first and second conductive patterns formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the contact holes; a cathode electrode formed on the light generation area and electrically connected to the second conductive pattern; an organic light emission layer disposed on the cathode electrode; an anode electrode disposed on the organic light emission layer and formed from a transparent metal material; and electrode patterns formed from the same material as the second conductive pattern on the rest of the contact holes which expose the first and second pad portions. | 2010-08-26 |
20100213483 | ILLUMINATION DEVICE - An illumination device having a plurality of light emitting diodes is provided. The light emitting diode may include a plurality of semiconductor layers at least one of which has a light emitting surface which may include a rough surface pattern having a pre-determined pattern. The pre-determined pattern may include one or more impurity regions with each region having a plurality of peaks and valleys for directing the flow of current and causing an increase in the emission of light to reflect outwards from the light emitting surface while decreasing light reflected into the light emitting surface and as a result reducing the dissipation of heat. The plurality of impurity regions may be arranged such that a checkered pattern or configuration is formed by alternating the direction of the peaks and valleys in each region. | 2010-08-26 |
20100213484 | Lead frame assembly, package structure and LED package structure - A package structure is adapted for mounting at least one light emitting diode (LED) die. The package structure includes an insulating housing having a top surface that is formed with a cavity, and a lead frame unit. The lead frame unit includes a first lead frame portion and a second lead frame portion. The first lead frame portion is covered by the insulating housing, and has a die-bonding area exposed within the cavity and adapted for mounting the LED die. The second lead frame portion is covered by the insulating housing, and has a conductive surface exposed outwardly of the top surface of the insulating housing and adapted for electrical connection with an end of a conductive wire. | 2010-08-26 |
20100213485 | VERTICAL LED WITH CONDUCTIVE VIAS - A light emitting device comprises a novel low-loss array of conductive vias embedded in a dielectric multilayer stack, to act as an electrically-conductive, low-loss, high-reflectivity reflector layer (CVMR). In one example the CVMR stack is employed between a reflective metal bottom contact and a p-GaN semiconductor flip chip layer. The CVMR stack comprises at least (3) layers with at least (2) differing dielectric constants. The conductive vias are arranged such that localised and propagating surface plasmons associated with the structure reside within the electromagnetic stopband of the CVMR stack, which in turn inhibits trapped LED modes coupling into these plasmonic modes, thereby increasing the overall reflectivity of the CVM R. This technique improves optical light extraction and provides a vertical conduction path for optimal current spreading in a semiconductor light emitting device. A light emitting module and method of manufacture are also described. | 2010-08-26 |
20100213486 | TRANSPARENT HEAT SPREADER FOR LEDS - A heat spreader for an LED can include a thermally conductive and optically transparent member. The bottom side of the heat spreader can be configured to attach to a light emitting side of the LED. The top and/or bottom surface of the heat spreader can have a phosphor layer formed thereon. The heat spreader can be configured to conduct heat from the LED to a package. The heat spreader can be configured to conduct heat from the phosphors to the package. By facilitating the removal of heat from the LED and phosphors, more current can be used to drive the LED. The use of more current facilitates the construction of a brighter LED, which can be used in applications such as flashlights, displays, and general illumination. By facilitating the removal of heat from the phosphors, desired colors can be better provided. | 2010-08-26 |
20100213487 | SIDE-EMITTING LED PACKAGE AND MANUFACTURING METHOD OF THE SAME - A side-emitting LED includes a substrate formed with a plurality of electrodes, an LED chip bonded onto the substrate and electrically connected to the electrodes, a transparent member encapsulating the LED chip and a casing fixed on the substrate. The transparent member has a flat bottom surface attached to the substrate, a vertically surface extending perpendicularly from a straight side edge of the flat bottom surface and a curved surface connected to curved edges of the flat bottom and vertical surfaces. The casing encapsulates the transparent member excepting the vertical surface of the transparent member. The curved surface of the transparent member is shaped as a part of an outer surface of an ellipsoid. | 2010-08-26 |
20100213488 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Provided are a light emitting device, a light emitting device package and a lighting system comprising the same. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and an anti-reflection region on a lateral surface of the light emitting structure. | 2010-08-26 |
20100213489 | PHOSPHOR AND LIGHT EMITTING DEVICE - A phosphor and a light emitting device containing the phosphor are provided. According to an embodiment, the phosphor is expressed in a chemical formula of L | 2010-08-26 |
20100213490 | SEALING COMPOSITION FOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME - According to an aspect of the present invention, there is provided a sealing composition for a light emitting device, the sealing composition including: a silicone/epoxy compound resin including a silicone resin having at least one silicon atom-bonded hydroxyl group and an epoxy resin having at least one oxirane group while the hydroxyl group of the silicone resin and the oxirane group of the epoxy resin are chemically bound to each other. | 2010-08-26 |
20100213491 | LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME - This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation. | 2010-08-26 |
20100213492 | Light Emitting Device and Method of Manufacturing the Same - A light emitting device for generating infrared light includes a substrate, a first metal layer, a dielectric layer and a second metal layer. The substrate has a first surface. The first metal layer is formed on the first surface of the substrate. The dielectric layer is formed on the first metal layer. A thickness of the dielectric layer is greater than a particular value. The second metal layer is formed on the dielectric layer. When the light emitting device is heated, the dielectric layer has a waveguide mode such that the infrared light generated by the light emitting device can be transmitted in the dielectric layer. A wavelength of the infrared light generated in the waveguide mode relates to the thickness of the dielectric layer. | 2010-08-26 |
20100213493 | LIGHT-EMITTING DEVICE - A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer. | 2010-08-26 |
20100213494 | GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer. | 2010-08-26 |
20100213495 | ELECTRODE STRUCTURES FOR LEDS WITH INCREASED ACTIVE AREA - An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. The semiconductor material can have a cutout formed therein and a portion of the electrode can be formed outside of the cutout and a portion of the electrode can be formed inside of the cutout. The portion of the electrode outside the cutout can be electrically isolated from the semiconductor material by the dielectric material. | 2010-08-26 |
20100213496 | LIGHT EMITTING DIODE PACKAGE - A light emitting diode (LED) package including a carrier, a housing, at least one LED chip and at least one electrostatic discharge protector (ESD protector) is provided. The housing encapsulating a portion of the carrier has at least one first opening, at least one second opening and a barricade. The barricade separates the first opening from the second opening. The first opening and the second opening expose a first surface of the carrier. The LED chip is disposed on the first surface of the carrier, located in the first opening, and electrically connected to the carrier. The ESD protector is disposed on the first surface of the carrier, located in the second opening, and electrically connected to the carrier. | 2010-08-26 |
20100213497 | LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Provided are a light emitting device package and a lighting system comprising the same. The light emitting device package comprises a package body having an inclined side surface and a light emitting device on the inclined side surface of the package body. | 2010-08-26 |
20100213498 | LIGHT EMITTING PACKAGE CONTROLLING COLOR TEMPERATURE, FABRICATING METHOD THEREOF, COLOR TEMPERATURE CONTROLLING METHOD OF LIGHT EMITTING PACKAGE - Provided are a light emitting package capable of controlling a color temperature, a fabricating method thereof, and a color temperature controlling method of the light emitting package. The light emitting package includes a package body, a first electrode and a second electrode formed on the package body and spaced apart from each other, a light emitting element formed on the package body and electrically connected to the first electrode and the second electrode, and a thin film resistor connected in series to the first electrode. | 2010-08-26 |
20100213499 | LIGHT EMITTING DEVICE - To provide a light emitting device that is compact and has high efficiency of extracting light comprising a support body that incorporates a light emitting element. | 2010-08-26 |
20100213500 | INFRARED SOURCE - A sealed infrared radiation source includes an emitter membrane stimulated by an electrical current conducted through the membrane, which acts like an electrical conductor, wherein the membrane is mounted between first and second housing parts, at least one being transparent in the IR range, each housing part defining a cavity between the membrane and the respective housing part of each side of the membrane. The housing parts are at least partially electrical conductive, and a first of the housing parts is electrically coupled to a first end of the electrical conductor and insulated from the second end of the electrical conductor, the second housing part being electrically coupled to a second end of the electrical conductor and being insulated from the first end of the electrical conductor, thus allowing a current applied from the first housing part to the second housing part to pass through and heat the membrane. | 2010-08-26 |
20100213501 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present disclosure relates to a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer. An embodiment of the disclosure includes a gallium nitride-based compound semiconductor light-emitting device, which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, which may be formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and a region having a semiconductor metal concentration of 20 at. % or more, based on all metals, is present in the transparent electrically conducting film on the semiconductor side surface of the transparent electrically conducting film. | 2010-08-26 |
20100213502 | OPTICAL SEMICONDUCTOR DEVICE ENCAPSULATED WITH SILICONE RESIN - An optical semiconductor device encapsulated with a silicone resin that suffers no discoloration of the lead and exhibits excellent thermal shock resistance. The optical semiconductor device includes an optical semiconductor element and a cured product of a silicone resin composition that encapsulates the optical semiconductor element, wherein the amount of (ΦSiO | 2010-08-26 |
20100213503 | BIODIRECTIONAL SWITCH - A bidirectional switch includes a plurality of unit cells | 2010-08-26 |
20100213504 | LATERAL BIPOLAR JUNCTION TRANSISTOR - A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process. | 2010-08-26 |
20100213505 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE - A semiconductor device has a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer. The semiconductor device has a region of the first conductivity type arranged in the second semiconductor layer. A first electrode contacts the region of the first conductivity type and the second semiconductor layer. A trench extends into the first semiconductor layer, and a voltage dependent short circuit diverter structure has a highly-doped diverter region of the second conductivity type. This diverter region is arranged via an end of a channel region and coupled to a diode arranged in the trench. | 2010-08-26 |
20100213506 | COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE - A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode. | 2010-08-26 |
20100213507 | LATERAL BIPOLAR JUNCTION TRANSISTOR - A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process. | 2010-08-26 |
20100213508 | SEMICONDUCTOR DEVICE - A semiconductor device in which: reed-shaped portions of an emitter layer of a second conductivity type are discretely formed on a surface of a base layer in a first vertical direction that is a direction vertical to a direction from an emitter electrode to a collector electrode; in a region adjoining the emitter layer, an interface of the contact layer on a side of the collector electrode is formed up to directly beneath an interface of the gate electrode on a side of the emitter electrode; and directly beneath the emitter layer, the interface of the contact layer on the side of the collector electrode is formed closer to the emitter electrode than to the interface of the gate electrode on the side of the emitter electrode. | 2010-08-26 |
20100213509 | Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof - In a semiconductor device of the present invention, a first base region | 2010-08-26 |