| 26th week of 2012 patent applcation highlights part 17 |
| Patent application number | Title | Published |
|---|
| 20120161281 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING PEELING OF LOWER ELECTRODE OF CAPACITOR - A method of manufacturing a semiconductor device includes: forming a core insulating film that includes first openings, on a semiconductor substrate; forming cylindrical lower electrodes that cover sides of the first openings with a conductive film; forming a support film that covers at least an upper surface of the core insulating film between the lower electrodes; forming a mask film in which an outside of a region where at least the lower electrodes are formed is removed, by using the support film; and performing isotropic etching on the core insulating film so as to leave the core insulating film at a part of an area between the lower electrodes, after the mask film is formed. | 2012-06-28 |
| 20120161282 | Method for Forming a Ruthenium Film - Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided. | 2012-06-28 |
| 20120161283 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having a 6F | 2012-06-28 |
| 20120161284 | CHIP RESISTOR AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a chip resistor and method for manufacturing the same. The method includes the following steps of: (a) providing a substrate and a resistor layer; (b) attaching the resistor layer to the substrate; (c) forming a first metal layer; (d) forming a plurality of through holes; (e) forming a connecting metal layer in the through holes to electrically connect the resistor layer and the first metal layer; (f) patterning the resistor layer to form a plurality of first resistor bodies; (g) forming a plurality of first protecting layers to protect the first resistor bodies; and (h) proceeding a singulation process along a plurality of cutting lines to form a plurality of chip resistors. Whereby, no alignment problem occurs and the yield can be raised. | 2012-06-28 |
| 20120161285 | Reducing High-Frequency Signal Loss in Substrates - An integrated circuit structure includes a semiconductor substrate of a first conductivity type; and a depletion region in the semiconductor substrate. A deep well region is substantially enclosed by the depletion region, wherein the deep well region is of a second conductivity type opposite the first conductivity type. The depletion region includes a first portion directly over the deep well region and a second portion directly under the deep well region. An integrated circuit device is directly over the depletion region. | 2012-06-28 |
| 20120161286 | Monolithic IGBT and diode structure for quasi-resonant converters - This invention discloses a semiconductor power device formed in a semiconductor substrate. The semiconductor power device further includes a channel stop region near a peripheral of the semiconductor substrate wherein the channel stop region further includes a peripheral terminal of a diode corresponding with another terminal of the diode laterally opposite from the peripheral terminal disposed on an active area of the semiconductor power device. In an embodiment of this invention, the semiconductor power device is an insulated gate bipolar transistor (IGBT). | 2012-06-28 |
| 20120161287 | METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film. | 2012-06-28 |
| 20120161288 | THERMAL OXIDATION OF SINGLE CRYSTAL ALUMINUM ANTIMONIDE AND MATERIALS HAVING THE SAME - In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. | 2012-06-28 |
| 20120161289 | STRAIN RELAXATION USING METAL MATERIALS AND RELATED STRUCTURES - Methods of fabricating semiconductor structures include forming a plurality of openings extending through a semiconductor material and at least partially through a metal material and deforming the metal material to relax a remaining portion of the semiconductor material. The metal material may be deformed exposing the metal material to a temperature sufficient it to alter (i.e., increase) its ductility. The metal material may be formed from one or more of hafnium, zirconium, yttrium and a metallic glass. Another semiconductor material may be deposited over the remaining portions of the semiconductor material, and a portion the metal material may be removed from between each of the remaining portions of the semiconductor material. Semiconductor structures may be formed using such methods. | 2012-06-28 |
| 20120161290 | Black GE Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays - Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (˜4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (˜75°) and for relatively short nanoneedle lengths (˜1 μm). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of ˜1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates. | 2012-06-28 |
| 20120161291 | PROCESS FOR CLEAVING A SUBSTRATE - A process for cleaving a substrate for the purpose of detaching a film therefrom. The method includes the formation of a stress-generating structure locally bonded to the substrate surface and designed to expand or contract in a plane parallel to the substrate surface under the effect of a heat treatment; and the application of a heat treatment to the structure, designed to cause the structure to expand or contract so as to generate a plurality of local stresses in the substrate which generates a stress greater than the mechanical strength of the substrate in a cleavage plane parallel to the surface of the substrate defining the film to be detached, the stress leading to the cleavage of the substrate over the cleavage plane. Also, an assembly of a substrate and the stress-generating structure as well as use of the assembly in a semiconductor device for photovoltaic, optoelectronic or electronic applications. | 2012-06-28 |
| 20120161292 | PROCESS FOR ASSEMBLING TWO WAFERS AND CORRESPONDING DEVICE - A process for assembling a first wafer and a second wafer each bevelled on their peripheries includes excavating the bevelled peripheral part of at least one first side of the first wafer to create a deposit bordering the region excavated in the material of the first wafer. The first side and a second side of the second wafer are then bonded together. | 2012-06-28 |
| 20120161293 | METHOD FOR PRODUCING AN INTEGRATED CIRCUIT AND RESULTING FILM CHIP - A semiconductor substrate having a first lateral dimension is combined with a flexible film piece having a second lateral dimension by arranging the semiconductor substrate in a recess of the film piece. The semiconductor substrate has circuit structures produced using lithography process steps. After the semiconductor substrate has been arranged in the recess of the film piece, a patterned layer of an electrically conductive material is produced above the semiconductor substrate and the film piece using lithography process steps. The patterned layer extends from the semiconductor substrate up to the flexible film piece and forms a number of electrically conductive contact tracks between the semiconductor substrate and the film piece. | 2012-06-28 |
| 20120161294 | Method of Batch Trimming Circuit Elements - Multiple wafers that each has multiple high-precision circuits and corresponding trim control circuits are batch trimmed in a process where each wafer is formed to include openings that expose trimmable circuit elements that are internal to the circuitry of the high-precision circuits. The high-precision circuits and trim control circuits are electrically activated during the trimming phase by metal traces that run along the saw streets. The method attaches a wafer contact structure to each wafer to electrically activate the metal traces. The method places the wafers with the wafer contact structures into a solution where the exposed trimmable circuit elements are electroplated or anodized when the actual output voltage of a high-precision circuit does not match the predicted output voltage of the high-precision circuit. | 2012-06-28 |
| 20120161295 | CYCLIC CARBOSILANE DIELECTRIC FILMS - Embodiments of the invention provide dielectric films and low-k dielectric films and methods for making dielectric and low-k dielectric films. Dielectric films are made from carbosilane-containing precursors. In embodiments of the invention, dielectric film precursors comprise attached porogen molecules. In further embodiments, dielectric films have nanometer-dimensioned pores. | 2012-06-28 |
| 20120161296 | MULTIPLE PATTERNING USING IMPROVED PATTERNABLE LOW-k DIELECTRIC MATERIALS - A double patterned semiconductor structure is provided. The structure includes a first patterned and cured low-k structure located on a first portion of an antireflective coating, and a second patterned and cured low-k structure located on a second portion of the antireflective coating, wherein the second patterned and cured low-k structure is spaced apart from the first patterned and cured low-k dielectric structure. | 2012-06-28 |
| 20120161297 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus. | 2012-06-28 |
| 20120161298 | DIODE AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT INCLUDING THE SAME - A diode includes a first region having a first conductive type impurity and formed in a first well having the first conductive type impurity, a second region formed in the first well and having a second conductive type impurity, and a semiconductor pattern disposed above the first well and including a first portion having the first conductive type impurity and a second portion having the second conductive type impurity. The first region and the first portion are coupled with an anode, and the second region and the second portion are coupled with a cathode. | 2012-06-28 |
| 20120161299 | INTERLEVEL CONDUCTIVE LIGHT SHIELD - A CMOS image sensor pixel includes a conductive light shield, which is located between a first dielectric layer and a second dielectric layer. At least one via extends from a top surface of the second dielectric layer to a bottom surface of the first dielectric layer is formed in the metal interconnect structure. The conductive light shield may be formed within a contact level between a top surface of a semiconductor substrate and a first metal line level, or may be formed in any metal interconnect via level between two metal line levels. The inventive CMOS image sensor pixel enables reduction of noise in the signal stored in the floating drain. | 2012-06-28 |
| 20120161300 | IONIZING RADIATION BLOCKING IN IC CHIP TO REDUCE SOFT ERRORS - Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip. | 2012-06-28 |
| 20120161301 | SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure. | 2012-06-28 |
| 20120161302 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present disclosure includes: a plate ( | 2012-06-28 |
| 20120161303 | POWER SEMICONDUCTOR MODULE - A driver IC which is operated by a power supply system insulated from a control IC is mounted in the vicinity of a switching element on a first conductor pattern. A second conductor pattern connected to a source terminal or an emitter terminal of the switching element is electrically connected to a third conductor pattern on which the driver IC is mounted. A ground terminal of the driver IC is electrically connected to the third conductor pattern, and a drive terminal of the driver IC is electrically connected to a gate terminal or a base terminal of the switching element. | 2012-06-28 |
| 20120161304 | Dual-leadframe Multi-chip Package and Method of Manufacture - A dual-leadframe multi-chip package comprises a first leadframe with a first die pad, and a second leadframe with a second die pad; a first chip mounted on the first die pad functioning as a high-side MOSFET and second chip mounted on the second die pad functioning as a low-side MOSFET. The package may further comprises a bypass capacity configured as a third chip mounted on the first die pad or integrated with the first chip. The package may further comprise a three-dimensional connecting plate formed as an integrated structure as the second die pad for electrically connecting a top contact area of the first chip to a bottom contact area of the second chip. A top connecting plate connects a top contact area of the second chip and a top contact area of the third chip to an outer pin of the first leadframe. | 2012-06-28 |
| 20120161305 | TECHNIQUES FOR BONDING SUBSTRATES USING AN INTERMEDIATE LAYER - A method includes depositing a thin film on a first surface of a first substrate and moving a second surface of a second substrate into contact with the thin film such that the thin film is located between the first and second surfaces. The method further includes generating electromagnetic (EM) radiation of a first wavelength, the first wavelength selected such that the thin film absorbs EM radiation at the first wavelength. Additionally, the method includes directing the EM radiation through one of the first and second substrates and onto a region of the thin film until the first and second substrates are fused in the region. | 2012-06-28 |
| 20120161306 | Semiconductor Package - In one embodiment, a semiconductor package comprising a metal base coupled to one or more pins, a semiconductor body having a top side and a bottom side, the top side comprising an integrated circuit and one or more metal surfaces for coupling the integrated circuit to the one more pins with one or more bonding wires, the bottom side non-positively coupled to the metal base, a disk having a top area and a base area, the base area coupled to the top side of the semiconductor body and at least partially covering the integrated circuit, the disk being electrically insulated from the semiconductor body, and a plastic compound completely enclosing the one or more bonding wires, and at least partially enclosing the top side of the integrated circuit, the top area of the disk, and the one or more pins. | 2012-06-28 |
| 20120161307 | CHIP SCALE SURFACE MOUNTED SEMICONDUCTOR DEVICE PACKAGE AND PROCESS OF MANUFACTURE - A semiconductor device package die and method of manufacture are disclosed. The device package die may comprise a device substrate having one or more front electrodes located on a front surface of the device substrate and electrically connected to one or more corresponding device regions formed within the device substrate proximate the front surface. A back conductive layer is formed on a back surface of the device substrate. The back conductive layer is electrically connected to a device region formed within the device substrate proximate a back surface of the device substrate. One or more conductive extensions are formed on one or more corresponding sidewalls of the device substrate in electrical contact with the back conductive layer, and extend to a portion of the front surface of the device substrate. A support substrate is bonded to the back surface of the device substrate. | 2012-06-28 |
| 20120161308 | Protecting T-Contacts of Chip Scale Packages from Moisture - A method includes performing a first die-saw on a package structure includes forming a first and a second metal lead extending into a trench of a package structure, wherein the first and the second metal leads contact the side edges of contact pads that are in devices in the package structure. The first and the second metal leads are interconnected through a connecting metal portion. A pre-cut is performed to cut the connecting metal portion to separate the first and the second metal leads, wherein remaining portions of the connecting metal portion have edges after the pre-cut. A dielectric coating is formed over the first and the second metal leads. A die-saw is performed to saw apart the package structure, so that the first and the second dies are separated into separate piece. In each of the resulting pieces, the edges of the remaining portions of the connecting metal portion are covered by remaining portions of the first dielectric coating. | 2012-06-28 |
| 20120161309 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a base portion including a first member and a second member which are joined to each other; a semiconductor element mounted on the first member; a terminal mounted on the second member; and a wire electrically connecting the semiconductor element to the terminal. Heat resistance of the first member is lower than heat resistance of the second member, and linear thermal expansion coefficient of the second member is smaller than linear thermal expansion coefficient of the first member. | 2012-06-28 |
| 20120161310 | Trap Rich Layer for Semiconductor Devices - An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer. The trap rich layer is formed above the active layer. In some embodiments, the active layer is included in a semiconductor wafer, and the trap rich layer is included in a handle wafer. | 2012-06-28 |
| 20120161311 | WIRING BOARD AND SEMICONDUCTOR PACKAGE - A wiring board includes a stacked body having a plurality of insulating layers and a plurality of wiring layers which are alternately stacked, and a solder-resist layer being formed on one side of the stacked body and covering the wiring layer exposed to the one side of the stacked body. The insulating layer is exposed to the other side of the stacked body. The solder-resist layer is in a transparent or semitransparent light yellow color. | 2012-06-28 |
| 20120161312 | NON-SOLDER METAL BUMPS TO REDUCE PACKAGE HEIGHT - Electronic assemblies and their manufacture are described. One assembly includes a substrate and a die on a first side of the substrate. A plurality of non-solder metal bumps are positioned on a second side of the substrate. The assembly also includes a board to which the non-solder metal bumps are coupled. The assembly also includes solder positioned between the board and the substrate, wherein the board is electrically coupled to the substrate through the solder and the bumps. Other embodiments are described and claimed. | 2012-06-28 |
| 20120161313 | SEMICONDUCTOR DEVICE, AND INSPECTION METHOD THEREOF - In a substrate for a stacking-type semiconductor device including a connection terminal provided for a connection with a semiconductor chip to be stacked and an external terminal connected to the connection terminal through a conductor provided in a substrate, connection terminals of a power supply, a ground and the like, which terminals have an identical node, are electrically continuous with each other. Thus, it is possible to facilitate an inspection of electrical continuity between each connection terminal and an external terminal corresponding to each connection terminal by minimum addition of inspecting terminals. Further, it is possible to improve reliability of a stacking-type semiconductor module. | 2012-06-28 |
| 20120161314 | TEMPLATE WAFER AND PROCESS FOR SMALL PITCH FLIP-CHIP INTERCONNECT HYBRIDIZATION - A process is disclosed for high density indium bumping of microchips by using an innovative template wafer upon which the bumps are initially fabricated. Once fabricated, these bumps are transferred to the microchip, after which can be hybridized to another microchip. Such a template wafer is reusable, and thus provides an economical way to fabricate indium bumps. Reusability also eliminates nonuniformities in bump shape and size in serial processing of separate microchips, which is not the case for other indium bump fabrication processes. Such a fabrication process provides a way to form relatively tall indium bumps and accomplishes this without the standard thick photoresist liftoff process. The described process can be suitable for bump pitches under 10 microns, and is only limited by the resolution of the photolithography equipment used. | 2012-06-28 |
| 20120161315 | THREE-DIMENSIONAL SYSTEM-IN-PACKAGE PACKAGE-ON-PACKAGE STRUCTURE - The present invention provides a three-dimensional System-In-Package (SIP) Package-On-Package (POP) structure comprising a support element formed around a first electronic device. A filling material is filled between the first electronic device and the support element. Signal channels are coupled to first die pads of the first electronic device. Conductive elements form signal connection between the first end of the signal channels and the second die pads of a second electronic device. | 2012-06-28 |
| 20120161316 | SUBSTRATE WITH EMBEDDED STACKED THROUGH-SILICON VIA DIE - A substrate with an embedded stacked through-silicon via die is described. For example, an apparatus includes a first die and a second die. The second die has one or more through-silicon vias disposed therein (TSV die). The first die is electrically coupled to the TSV die through the one or more through-silicon vias. The apparatus also includes a coreless substrate. Both the first die and the TSV die are embedded in the coreless substrate. | 2012-06-28 |
| 20120161317 | AREA ARRAY SEMICONDUCTOR DEVICE PACKAGE INTERCONNECT STRUCTURE WITH OPTIONAL PACKAGE-TO-PACKAGE OR FLEXIBLE CIRCUIT TO PACKAGE CONNECTION - An area array integrated circuit (IC) package for an IC device. The IC package includes a first substrate with conductive traces electrically coupled to the IC device. An interconnect assembly having a first surface is mechanically coupled to the first substrate. The interconnect assembly includes a plurality of contact members electrically coupled to the conductive traces on the first substrate. A second substrate is mechanically coupled to a second surface of the interconnect assembly so that the first substrate, the interconnect assembly, and the second substrate substantially surround the IC device. The second substrate includes conductive traces that are electrically coupled to the contact members in the interconnect assembly. | 2012-06-28 |
| 20120161318 | MULTILAYER DIELECTRIC MEMORY DEVICE - A memory device has multiple dielectric barrier regions. A memory device has multiple barrier regions that provide higher or lower current-voltage slope compared to a memory device having a single barrier region. The device also has electrode regions that provide further control over the current-voltage relationship. | 2012-06-28 |
| 20120161319 | BALL GRID ARRAY METHOD AND STRUCTURE - A process for making an integrated circuit, a wafer level integrated circuit package or an embedded wafer level package includes forming copper contact pads on a substrate or substructure. The substructure may include devices and the contact pads may be used for forming electrical couplings to the devices. For example, copper plating may be applied to a substructure and the copper plating etched to form copper contact pads on the substructure. An etching process may be applied to remove barrier layer material on the substructure, such as adjacent to the copper pads. For example, a hydrogen peroxide etch may be applied to remove titanium-tungsten from a surface of the substructure. The pads are again etched to remove barrier layer etchant, byproducts and/or oxide from the pads. Contamination control steps may be performed, such as quick-dump-and-rinse (QDR) and spin-rinse-and-dry (SRD) processing. | 2012-06-28 |
| 20120161320 | COBALT METAL BARRIER LAYERS - Electrical interconnects for integrated circuits and methods of fabrication of interconnects are provided. Devices are provided comprising copper interconnects having metal liner layers comprising cobalt and a metal selected from the group consisting of Ru, Pt, Ir, Pd, Re, or Rh. Devices having barrier layers comprising ruthenium and cobalt are provided. Methods include providing a substrate having a trench or via formed therein, forming a metal layer, the metal being selected from the group consisting of Ru, Pt, Ir, Pd, Re, and Rh, onto surfaces of the feature, depositing a copper seed layer comprising a cobalt dopant, and depositing copper into the feature. | 2012-06-28 |
| 20120161321 | SEMICONDUCTOR DEVICE CONTACTS - Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the silicon semiconductor contact surface. In some such cases, a conductive material provides the contacts and the material forming a non-reactive interface with the silicon surface. In other cases, a thin semiconducting or insulting layer provides the non-reactive interface with the silicon surface and is coupled to conductive material of the contacts. The techniques can be embodied, for instance, in planar or non-planar (e.g., double-gate and tri-gate FinFETs) transistor devices. | 2012-06-28 |
| 20120161322 | ELECTRONIC COMPONENT MANUFACTURING METHOD INCLUDING STEP OF EMBEDDING METAL FILM - The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets. | 2012-06-28 |
| 20120161323 | SUBSTRATE FOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a substrate for a package and a method for manufacturing the same. The substrate for the package according to the present invention includes: a base substrate; a photosensitive insulating layer formed on one surface of the base substrate and having a roughness formed on a surface thereof; and a seed layer formed on one surface of the photosensitive insulating layer. | 2012-06-28 |
| 20120161324 | Semiconductor Device Comprising Contact Elements with Silicided Sidewall Regions - When forming a metal silicide within contact openings in complex semiconductor devices, a silicidation of sidewall surface areas of the contact openings may be initiated by forming a silicon layer therein, thereby reducing unwanted diffusion of the refractory metal species into the laterally adjacent dielectric material. In this manner, superior reliability and electrical performance of the resulting contact elements may be achieved on the basis of a late silicide process. | 2012-06-28 |
| 20120161325 | SEMICONDUCTOR DEVICE PACKAGE - A semiconductor device package is provided. The semiconductor device package includes a laminate comprising a first metal layer disposed on a dielectric film; a plurality of vias extending through the laminate according to a predetermined pattern; one or more semiconductor devices attached to the dielectric film such that the semiconductor device contacts one or more vias; a patterned interconnect layer disposed on dielectric film, said patterned interconnect layer comprising one or more patterned regions of the first metal layer and an electrically conductive layer, wherein a portion of the patterned interconnect layer extends through one or more vias to form an electrical contact with the semiconductor device. The patterned interconnect layer comprises a top interconnect region and a via interconnect region, wherein the package interconnect region has a thickness greater than a thickness of the via interconnect region. | 2012-06-28 |
| 20120161326 | COMPOSITION FOR FILLING THROUGH SILICON VIA (TSV), TSV FILLING METHOD AND SUBSTRATE INCLUDING TSV PLUG FORMED OF THE COMPOSITION - Provided is a composition for filling a Through Silicon Via (TSV) including: a metal powder; a solder powder; a curable resin; a reducing agent; and a curing agent. A TSV filling method using the composition and a substrate including a TSV plug formed of the composition are also provided. | 2012-06-28 |
| 20120161327 | Shrinkage of Contact Elements and Vias in a Semiconductor Device by Incorporating Additional Tapering Material - Vertical contact structures, such as contact elements connected to semiconductor-based contact regions in device areas comprising densely-spaced gate electrode structures, are formed for given lithography and patterning capabilities by incorporating at least one additional dielectric layer of superior tapering behavior into the dielectric material system. | 2012-06-28 |
| 20120161328 | RETICLE SET MODIFICATION TO PRODUCE MULTI-CORE DIES - A first reticle set designed for manufacturing dies with a limited number of cores is modified into a second reticle set suitable for manufacturing at least some dies with at least twice as many cores. The first reticle set defines scribe lines to separate the originally defined dies. At least one scribe line is removed from pairs of adjacent but originally distinctly defined dies. Inter-core communication wires are defined to connect the adjacent cores, which are configured to enable the adjacent cores to communicate during operation without connecting to any physical input/output landing pads of the resulting more numerously cored die, which will not carry signals through the inter-core communication wires off the P-core die. The inter-core communication wires may be used for power management coordination purposes or to bypass the external processor bus. | 2012-06-28 |
| 20120161329 | MULTI-LEVEL INTEGRATED CIRCUIT, DEVICE AND METHOD FOR MODELING MULTI-LEVEL INTEGRATED CIRCUITS - A multi-level integrated circuit comprising a superposition of a first stack and a second stack of layers, and including:
| 2012-06-28 |
| 20120161330 | DEVICE PACKAGING WITH SUBSTRATES HAVING EMBEDDED LINES AND METAL DEFINED PADS - Package substrates enabling reduced bump pitches and package assemblies thereof. Surface-level metal features are embedded in a surface-level dielectric layer with surface finish protruding from a top surface of the surface-level dielectric for assembly, without solder resist, to an IC chip having soldered connection points. Package substrates are fabricated to enable multiple levels of trace routing with each trace routing level capable of reduced minimum trace width and spacing. | 2012-06-28 |
| 20120161331 | MULTI-CHIP PACKAGE HAVING A SUBSTRATE WITH A PLURALITY OF VERTICALLY EMBEDDED DIE AND A PROCESS OF FORMING THE SAME - An apparatus includes a substrate having a land side having a plurality of contact pads and a die side opposite the land side. The apparatus includes a first die and a second die wherein the first die and second die are embedded within the substrate such that the second die is located between the first die and the land side of the substrate. | 2012-06-28 |
| 20120161332 | METHOD FOR PRODUCING VIAS IN FAN-OUT WAFERS USING DRY FILM AND CONDUCTIVE PASTE, AND A CORRESPONDING SEMICONDUCTOR PACKAGE - A process for manufacturing semiconductor packages is provided, that includes drilling blind apertures in a reconstituted wafer, adhering a dry film resist on the wafer over the apertures, and patterning the film to expose a space around each of the apertures. The apertures and spaces are then filled with conductive paste by wiping a quantity of the paste across a surface of the film so that paste is forced into the spaces and apertures. The spaces around the apertures define contact pads whose thickness is constrained by the thickness of the film, preferably to about 10 μm or less. To prevent paste from trapping air pockets in the apertures, the wiping process can be performed in a chamber from which much or all of the air has been evacuated. After curing the paste, the wafer is thinned from the back to expose the cured paste in the apertures. | 2012-06-28 |
| 20120161333 | DEVICE FOR CONNECTING NANO-OBJECTS TO EXTERNAL ELECTRICAL SYSTEMS, AND METHOD FOR PRODUCING SAID DEVICE - Device for connecting nano-objects to external electrical systems, and method for producing the device. | 2012-06-28 |
| 20120161334 | REDUNDANCY DESIGN WITH ELECTRO-MIGRATION IMMUNITY AND METHOD OF MANUFACTURE - An IC interconnect for high direct current (DC) that is substantially immune to electro-migration (EM) damage, and a method of manufacture of the IC interconnect are provided. A structure includes a cluster-of-via structure at an intersection between inter-level wires. The cluster-of-via structure includes a plurality of vias each of which are filled with a metal and lined with a liner material. At least two adjacent of the vias are in contact with one another and the plurality of vias lowers current loading between the inter-level wires. | 2012-06-28 |
| 20120161335 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate, and an insulating layer that is provided on the semiconductor substrate, wherein, in an internal circuit formation region of the insulating layer, a via hole and an interconnect trench that is formed on the via hole and communicates with the via hole are provided, in the via hole and the interconnect trench, a conductor is provided so as to integrally bury the via hole and said interconnect trench, in a dicing region of the insulating layer, a groove portion and an opening that communicates with the groove portion and is formed to cover the groove portion when the semiconductor substrate is seen in plane view from the side of the substrate surface are formed, and in the groove portion and the opening, a conductor is provided so as to integrally bury the groove portion and the opening. | 2012-06-28 |
| 20120161336 | SEMICONDUCTOR DEVICE AND ASSEMBLING METHOD THEREOF - A semiconductor device and an assembling method thereof are provided. The semiconductor device includes a chip, a carrier, a plurality of first conductive elements and a plurality of second conductive elements. The chip has a plurality of first pads. The carrier has a plurality of second pads. The second pads correspond to the first pads. Each first conductive element is disposed between one of the first pads and one of the second pads. Each second conductive element is disposed between one of the first pads and one of the second pads. A volume ratio of intermetallic compound of the second conductive elements is greater than a volume ratio of intermetallic compound of the first conductive elements. | 2012-06-28 |
| 20120161337 | WIRING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR-CIRCUIT WIRING APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT - A wiring method for a semiconductor integrated circuit has the steps of, separately from a first layer on which a first signal wiring pattern is mainly formed, laying out a first power-supply wiring pattern on a second layer so that a plurality of rows of the first power-supply wiring pattern are regularly arranged with vacant areas each interposed between the rows and making narrower a width of each vacant area than a narrowest width of a row among the rows of the first power-supply wiring pattern, laying out a second signal wiring pattern electrically conductive to the first layer in two or more rows of the vacant areas on the second layer so that the second signal wiring pattern is not in contact with adjacent rows of the first power-supply wiring pattern on both sides, and laying out a second power-supply wiring pattern further in at least a portion of a pattern-layout allowable area remaining in the vacant areas. | 2012-06-28 |
| 20120161338 | Printable Composition of a Liquid or Gel Suspension of Two-Terminal Integrated Circuits and Apparatus - An exemplary printable composition of a liquid or gel suspension of two-terminal integrated circuits comprises: a plurality of two-terminal integrated circuits, each two-terminal integrated circuit of the plurality of two-terminal integrated circuits less than about 75 microns in any dimension; a first solvent; a second solvent different from the first solvent; and a viscosity modifier; wherein the composition has a viscosity substantially about 50 cps to about 25,000 cps at about 25° C. | 2012-06-28 |
| 20120161339 | FIBER-CONTAINING RESIN SUBSTRATE, SEALED SUBSTRATE HAVING SEMICONDUCTOR DEVICE MOUNTED THEREON, SEALED WAFER HAVING SEMICONDUCTOR DEVICE FORMED THEREON, A SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS - A fiber-containing resin substrate for collectively sealing a semiconductor devices mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor devices forming surface of a wafer having semiconductor devices formed thereon, includes: a resin-impregnated fiber base material obtained by impregnating a fiber base material with a thermosetting resin and semi-curing or curing the thermosetting resin; and an uncured resin layer containing an uncured thermosetting resin and formed on one side of the resin-impregnated fiber base material. There can be a fiber-containing resin substrate that enables suppressing warp of a wafer and delamination of semiconductor devices even though a large-diameter wafer or a large-diameter substrate made of a metal and the like is sealed, enables collectively sealing a semiconductor devices mounting surface of the substrate or a semiconductor devices forming surface of the wafer, and has excellent heat resistance or moisture resistance after sealing. | 2012-06-28 |
| 20120161340 | SYSTEM AND METHOD FOR REDUCING MINERAL BUILDUP ON DRIFT ELIMINATORS OF A COOLING TOWER - Apparatuses, methods and systems directed to reducing mineral buildup on drift eliminators of a cooling tower. Some embodiments of the invention allow irrigation of the drift eliminators of the cooling tower with fluid in the basin of the cooling tower to reduce mineral buildup. In other embodiments, the systems disclosed can be integrated with the drift eliminators to provide constant irrigation of to reduce mineral buildup. In some other embodiments, a control unit is used to selectively irrigate the drift eliminators based on the fluid temperature in the basin and the temperature inside and outside of the cooling tower. | 2012-06-28 |
| 20120161341 | AUTOMATIC CHOKE APPARATUS FOR CARBURETOR - An automatic choke apparatus for a carburetor includes an electric actuator, a choke valve opening/closing mechanism configured to open and close a choke valve by being driven by a power exerted by the electric actuator, and a controller configured to control operation of the electric actuator. The controller, to which a battery supplies electric power, operates the electric actuator and the choke valve opening/closing mechanism in order that, when the engine is stopped, the choke valve is set in a semi-opened position and, when the engine starts to be cranked, the choke valve is set in a fully-closed position. Accordingly, it is possible to prevent the choke valve from freezing up in the fully-closed state in a case where the engine is stopped under an extremely low temperature environment. | 2012-06-28 |
| 20120161342 | CARBURETOR WITH ONE PIECE CHOKE VALVE AND SHAFT ASSEMBLY - A carburetor comprising a one piece choke valve and shaft assembly including a shaft, a detent plate formed on a first end, a lever arm formed on a second end, a pair of opposing collars formed adjacent the detent plate and lever arm, a valve plate centrally positioned on shaft, and opposing splines formed on the shaft enabling it to be inserted through an assembly slot cut into a shaft bore in the carburetor body. The detent plate includes a partial annular slot encompassing the angular range of travel of the choke valve. First, second and third detent pockets are formed along an outer edge of the slot. A positive positioning pin engages or interacts with the detent plate to positively position the choke valve in first, second or third angular positions corresponding to “close choke”, “half choke” and “open choke.” | 2012-06-28 |
| 20120161343 | Air Conditioner - Disclosed is an air conditioner. The air conditioner includes a tray in which humidifying water is stored by a predetermined height, the tray being detachably attached to a main body, a humidifying gear rotatably arranged in the tray so as to be detachably attached to the tray, a lifter provided at a periphery of the humidifying gear, the lifter being submerged under the humidifying water so as to scoop up the humidifying water during rotation of the humidifying gear, and a humidifying filter provided in the humidifying gear and spaced apart from the humidifying water such that the humidifying water is supplied from the lifter to the humidifying filter during rotation of the humidifying gear. | 2012-06-28 |
| 20120161344 | METHOD OF MANUFACTURING A DIFFUSELY-REFLECTING POLARIZER HAVING A NEARLY ISOTROPIC CONTINUOUS PHASE - The present invention provides a method for manufacturing a diffusely reflecting polarizer, comprising the steps of: coextruding first and second polymers through a chaotic mixer and a sheeting die to produce a cast sheet with a desired blend morphology and stretching said cast sheet to produce a composite film containing a first polymer having a birefringence of less than 0.02, with said first polymer being an amorphous material and a continuous phase, and a second polymer which forms a dispersed phase, and having an index of refraction that differs from said continuous phase by greater than about 0.05 along a first axis and by less than about 0.05 along a second axis orthogonal to said first axis, wherein said first and second polymers taken together along a first axis for one polarization state of electromagnetic radiation exhibit a diffuse reflectivity R | 2012-06-28 |
| 20120161345 | METHOD OF MANUFACTURING A DIFFUSELY-REFLECTING POLARIZER HAVING A SUBSTANTIALLY AMORPHOUS NANO-COMPOSITE CONTINUOUS PHASE - The present invention provides a method for manufacturing a diffusely reflecting polarizer, comprising the steps of: coextruding first and second polymers through a chaotic mixer and a sheeting die to produce a cast sheet with a desired blend morphology and stretching said cast sheet to produce a composite film containing a first polymer having a birefringence of less than 0.02, with said first polymer being a substantially amorphous nano-composite material, and a second polymer, the first polymer being a major phase, and the second polymer being a dispersed minor phase, wherein said first and second polymers taken together along a first axis for one polarization state of electromagnetic radiation exhibit a diffuse reflectivity R | 2012-06-28 |
| 20120161346 | METHOD AND APPARATUS FOR PREPARING MICRO-PARTICLES OF POLYSACCHARIDES - The present invention relates to a method for the production of micro-particles of polysaccharides. The method includes preparing a feeding solution and a gelifying liquid to collect nebulized jets of the feeding solution. The feeding solution contains at least one polymer capable of forming micro-particle structures and at least one biologically active substance. The feeding solution is pressurized inside an air-less nebulizing unit and then nebulized through the unit itself so as to generate nebulized jets impacting the surface of the gelifying liquid. | 2012-06-28 |
| 20120161347 | Water-Treatment Particle and a Method of Manufacturing Thereof - A method of manufacturing water-treatment particles comprises respectively preparing a particle-fabricating solution that comprises chitinous composition and a forming solution first. Next, a complex solution is prepared by adding calcium sulfite into the particle-fabricating solution. Finally, the complex solution is pumped into the forming solution to form water-treatment particles. In addition, water-treatment particles manufactured by the method above are also disclosed in the specification. | 2012-06-28 |
| 20120161348 | SYSTEM FOR CHANGING SIPE BLADES FOR MOLDING OR RETREADING TIRES - An improved system for changing sipe blade configurations on equipment for the manufacture of tires is provided. This system allows the replacement of damaged sipe blades, the replacement of sipe blades of one configuration with those of another configuration, and the elimination of a sipe blade altogether. Certain embodiments allow sipe blades to be changed by providing a sipe blade that is held by a blade holder with a slit in its heel that allows a compact assembly of the sipe blade and blade holder that is easy to manufacture. Other embodiments allow sipe blades that have an undercut in the direction of draw in their midportion and side portions without undercuts to be easily made and installed. Finally, other embodiments allow for the effective replacement and fabrication of sipe blades that have undercuts in the direction of draw that blend into other projections found on a curing member. | 2012-06-28 |
| 20120161349 | METHOD FOR CHANGING A MOLD - A method for changing a mould of a moulding device, includes at least the following steps for dismounting a mould: (a) controlling fixing elements in order to release each mould half ( | 2012-06-28 |
| 20120161350 | VOICE COIL MECHANISM FOR USE IN ADDITIVE MANUFACTURING SYSTEM - A print head assembly that includes a receptacle supported from a carriage frame and configured to receive a print head, and a toggle mechanism configured to move the receptacle relative to the carriage frame. | 2012-06-28 |
| 20120161351 | FILLED POLYMER COMPOSITE AND SYNTHETIC BUILDING MATERIAL COMPOSITIONS - The invention relates to composite compositions having a matrix of polymer networks and dispersed phases of particulate or fibrous materials. The matrix is filled with a particulate phase, which can be selected from one or more of a variety of components, such as fly ash particles, axially oriented fibers, fabrics, chopped random fibers, mineral fibers, ground waste glass, granite dust, or other solid waste materials. A system for providing shape and/or surface features to a moldable material includes, in an exemplary embodiment, at least two first opposed flat endless belts spaced apart a first distance, with each having an inner surface and an outer surface. | 2012-06-28 |
| 20120161352 | METHOD FOR PRODUCING A FUEL CELL SEPARATOR - A method of producing a fuel cell separator includes pressing a compact part-forming material that includes a carbonaceous powder and a thermosetting resin binder at a temperature equal to or higher than the softening temperature of the thermosetting resin binder and less than the curing temperature of the thermosetting resin binder to obtain a compact part-forming preformed sheet, preparing a porous part-forming powder that includes a carbonaceous powder and a thermosetting resin binder, placing the compact part-forming preformed sheet and the porous part-forming powder in a forming die that has a concave-convex forming surface corresponding to the shape of a gas passage so that the concave-convex forming surface faces the porous part-forming powder, and hot-pressing the compact part-forming preformed sheet and the porous part-forming powder using the forming die at a temperature equal to or higher than the curing temperature of the thermosetting resin binder included in the compact part-forming material or the curing temperature of the thermosetting resin binder included in the porous part-forming powder, whichever is the higher. | 2012-06-28 |
| 20120161353 | METHOD FOR PRODUCING SOUND-ABSORBING FLEXIBLE MOULDED FOAMS - The invention relates to a method for producing sound-absorbing flexible polyurethane foam mouldings. | 2012-06-28 |
| 20120161354 | METHOD AND APPARATUS FOR COMPRESSING PARTICULATE MATTER - A compression molding apparatus for particulate matter comprising a magnetostrictive actuator functioning as an impact force applying means arranged at least between an upper ram or a lower ram and an upper punch or a lower punch. Particulate matter is compressed by a static pressure, and then an impact force is applied to the particulate matter to reduce internal stress. After compressing the particulate matter by the static pressure, the upper ram is allowed to fall gravitationally to shorten a molding time. | 2012-06-28 |
| 20120161355 | Self-repairing concrete having polyurethane polymer micro-capsules and method for fabricating the same - A self-repairing concrete includes a predetermined amount of concrete, micro-capsules and water being mixed together for a fixed function of micro-cracks, wherein a mass ratio of the concrete, micro capsules, and water is | 2012-06-28 |
| 20120161356 | Method for marking a three-dimensional surface - A method for producing a cranial remodeling device to correct for cranial shape abnormalities is described. One method comprises the steps of: providing cranial remodeling device trim line information; forming device material onto a three-dimensional model of a desired head shape; providing a machine responsive to said trim line information to move a spindle in a plurality of axes over the device material; providing a marking tool carried by the spindle; and operating the machine in response to the trim line information such that the machine moves the marking tool into surface engagement with the device material such that trim lines for the cranial remodeling device are marked onto the device material. | 2012-06-28 |
| 20120161357 | METHOD FOR PRODUCING LIQUID CRYSTAL POLYESTER FILM - An object of the present invention is to produce a liquid crystal polyester film having excellent thermal conductivity in a thickness direction. Provided is a liquid crystal polyester film, which comprises casting a liquid composition containing a liquid crystal polyester and a solvent; removing the solvent; raising a temperature from 150° C. or lower to a temperature between a liquid crystal transition temperature and 80° C. above the liquid crystal transition temperature of the liquid crystal polyester at a rate of 1.0° C./minute or more; and heat-treating the obtained film at a temperature between the liquid crystal transition temperature and 80° C. above the liquid crystal transition temperature of the liquid crystal polyester. It is preferred to use, as the liquid crystal polyester, those having a liquid crystal transition temperature of 320° C. or lower. | 2012-06-28 |
| 20120161358 | PROCESS FOR MAKING POLYETHYLENE TEREPHTHALATE - The invention relates to a process for making polyethylene terephthalate (PET) from ethylene glycol (EG), purified terephthalic acid (PTA) and optionally up to 6 mol % comonomer, using a mixed metal catalyst system and comprising the steps of a) esterifying EG and PTA to form diethyleneglycol terephthalate and oligomers (DGT), and b) melt-phase polycondensing DGT to form PET and EG, wherein the catalyst system substantially consists of 70-160 ppm of Sb-compound, 20-70 ppm of Zn-compound, and 0.5-20 ppm of Ti-glycolate as active components (ppm metal based on PET). With this process that applies reduced amount of metal catalyst components PET can be obtained with high productivity, which polyester shows favourable colour and optical clarity, also if recycling of EG is applied within the process. | 2012-06-28 |
| 20120161359 | RESIN MEMBER MOLDING METHOD AND RESIN MOLDING APPARATUS - A method of molding a resin member formed by solidifying molten resin M on a resin member on which molding is to be performed, includes first to third steps. The first step includes setting, on the member on which molding is to be performed, a first mold having a first cavity for molding a portion corresponding to a base portion of the resin member. The second step includes setting, on the first mold, a second mold having a second cavity for molding a portion corresponding to a main body portion of the resin member. The second cavity is formed so as to communicate with the first cavity. The third step includes pouring molten M resin into each of the cavities of both of the molds that have been set, and solidifying the molten resin M thus poured such that it is bonded to the member on which molding is to be performed. | 2012-06-28 |
| 20120161360 | INJECTION DEVICE - An injection device may include an injecting portion, and a material feeding portion having a pelletized resinous material. The material feeding portion includes a cylindrical feeding passage that is communicated with the injecting portion, a screw that is disposed in the feeding passage, and a drive mechanism that is configured to rotate the screw about a rotational axis. When the screw is rotated about the rotational axis by the drive mechanism, the pelletized resinous material can be fed into the injecting portion. | 2012-06-28 |
| 20120161361 | METHOD FOR POURING RESIN IN A STATOR OF AN ELECTRIC MACHINE, IN PARTICULAR AN AXIAL FLUX ELECTRIC MACHINE - A method for pouring resin in a stator ( | 2012-06-28 |
| 20120161362 | Method for Producing an Electronic Component - A method for producing an electronic component includes: providing at least one carrier element having a microcomponent receptacle configured for contacting at least one microcomponent, injection molding a housing around the carrier element, the microcomponent receptacle being situated in a cavity of the housing that is open on at least one side, introducing the microcomponent into the microcomponent receptacle in the cavity to contact the microcomponent to the carrier element, and injecting the cavity using a filler material to fix the microcomponent in the housing and in the microcomponent receptacle. | 2012-06-28 |
| 20120161363 | GOLF BALL MOLD AND GOLF BALL MANUFACTURING METHOD - The invention provides a golf ball mold that includes a mold body configured as a plurality of mold parts which have at least a parting surface that defines a parting line at a golf ball equator and removably mate to form a cavity having an inner wall with a plurality of dimple-forming protrusions thereon, and a support pin which has an end face with a plurality of dimple-forming protrusions thereon and is extendable into and retractable from the cavity. The support pin extends into the cavity to support a center sphere and, when in a retracted state, the end face thereof defines a portion of the inner wall of the cavity. The end face of the support pin includes a pole of the cavity and has a peripheral edge which intersects a parallel of latitude at 10 degrees from the pole. | 2012-06-28 |
| 20120161364 | AQUEOUS COMPOSITION FOR ENTERIC HARD CAPSULE, METHOD OF PREPARING ENTERIC HARD CAPSULE, AND ENTERIC HARD CAPSULE PREPARED USING THE METHOD - An aqueous composition for an enteric hard capsule, a method of preparing an enteric hard capsule, and an enteric hard capsule prepared using the method. The aqueous composition for an enteric hard capsule includes an enteric base material, a capsule forming aid, and a neutralizing agent. The method of preparing an enteric hard capsule includes: preparing an aqueous composition by dissolving an enteric base material, a capsule forming aid, and a neutralizing agent in water; preheating the aqueous composition to a temperature that is less than the gelation temperature for the aqueous composition; immersing a mold pin heated to a temperature that is greater than the gelation temperature for the aqueous composition into the aqueous composition; taking the mold pin out of the aqueous composition to obtain a film formed on the mold pin; and maintaining the film at a temperature that is equal to or greater than the gelation temperature for the aqueous composition for a predetermined period of time to fix the film on the mold pin and drying the film. | 2012-06-28 |
| 20120161365 | VULCANIZED TIRE MANUFACTURING METHOD AND VULCANIZATION APPARATUS - A vulcanization apparatus provided with a vulcanization vessel for vulcanizing a green tire and a suction line for sucking out gas from inside the vulcanization vessel after the vulcanization vessel has been opened. Accordingly, oily smoke generated when vulcanized rubber has been removed from a bladder and an inner wall of a mold can be more efficiently discharged than in cases in which gas inside a vulcanization vessel is sucked out and additional air is introduced into the vulcanization vessel only prior to opening the vulcanization vessel. | 2012-06-28 |
| 20120161366 | EXTRUDER APPARATUS FOR FORMING TIRE COMPONENTS - A method and apparatus for applying a blended rubber composition directly onto a tire building drum or core is described. A first extruder and a first gear pump for a first compound is provided. A second extruder and a second gear pump for a second compound is provided. The output of the first and second gear pump is fed into the inlet of the main extruder. A third pumping means is provided for pumping an accelerator mixture into the inlet of the main extruder; mixing together said first compound and said second compound and said accelerator mixture in said extruder and applying the mixture onto a tire building drum or core. | 2012-06-28 |
| 20120161367 | MOLD BASE FOR URETHANE CASTING PROCESS - A mold design with magnetic locking components for a urethane casting process can allow for several advantages over conventional mechanical locking mechanisms for holding two mold halves together. The magnetic locking components can be permanent magnetic components, electromagnetic components, or a combination of the two. A switch can allow for magnetizing and demagnetizing of the magnetic locking components, thereby respectively providing and releasing a mold holding force at the appropriate times of, for example, a urethane casting process. The magnetic locking components can be used with single or multi-cavity molds. | 2012-06-28 |
| 20120161368 | Carpet Reclamation System - A method an apparatus for reclaiming face fibers and polypropylene and/or polyvinyl chloride backing material from rolls and pieces of post-consumer carpet. The system includes a separator for separating the face fibers from the backing and for separating latex and carbon calcium powder from polypropylene backing. An extruder is provided for extruding the face fibers separated from the backing into extrusions, and a pelletizer pelletizes the extrusions. A roller opener opens the polypropylene backing into fibrous portions and also cleans such fibrous portions. Alternately, a granulator can be provided that chops and grinds the polypropylene or PVC backing into fragments after the separation of the face fibers from the backing. A heat source heats the PVC fragments, and also the polypropylene fragments (thereby separating the latex therefrom), and ultimately melts such fragments. Reclaimed fibers can be pelletized, made into extrusions, used in non-woven products and in other manners. | 2012-06-28 |
| 20120161369 | BLOW MOLD FOR MOLDING A CONTAINER - A blow mold is disclosed. The mold comprises a pair of mold halves having an operative configuration wherein said mold halves together define a cavity for a container. The container has a main body and a characteristic selected from the group of characteristics consisting of: a push-up base; an integral finish; and an embossed or a debossed feature. Each of the pair of mold halves has a first portion and a second portion formed integrally with the first portion. When the pair of mold halves is in the operative configuration, the first portions collectively define the main body and the second portions collectively define the characteristic. The blow mold can be used for prototyping, and can also be used for production. | 2012-06-28 |
| 20120161370 | MOULD FOR MOULDING A CONTAINER OBTAINED FROM A PARISON OF PLASTIC MATERIAL AND METHOD THEREOF | 2012-06-28 |
| 20120161371 | METHOD FOR PRODUCING AN ARTICLE FROM THERMOPLASTIC MATERIAL - The invention relates to a method for producing an article from thermoplastic material in which a tube-shaped preform is introduced into a multi-part blow mold and is expanded and formed by applying differential pressure, wherein, before the forming of the preform, at least one insert is introduced into the preform by means of a first holding means and wherein, before the forming of the preform, the insert is taken over by at least one second holding means puncturing the wall of the preform, the second holding means being formed as a blowing pin and an expansion and re-forming of the preform taking place by applying pressure medium with the second holding means. | 2012-06-28 |
| 20120161372 | METHOD AND APPARATUS FOR BLOW MOLDING AND FOR FILLING CONTAINERS - The method and the apparatus are used for blow molding and for filling containers. To this end, after a thermal conditioning step, a preform is shaped into a container using blowing pressure inside a blow molding tool. The blow molded containers are positioned at least along part of the transport path thereof by a carrying element, which is held by a rotating transfer wheel. The transfer wheel provides at least part of a coupling between a blow molding module for producing the containers and a filling module for filling the containers. An outfeed wheel of the blow molding module can be arranged in a transport direction of the containers upstream of the transfer wheel, and an infeed wheel of the filling module can be arranged in said transport direction downstream of the transfer wheel, wherein each wheel can be equipped with carrying elements for the containers. The number of carrying elements ( | 2012-06-28 |
| 20120161373 | METHOD FOR PRODUCING A PLASTIC ARTICLE AND BLOW MOLDING TOOL - The invention relates to a method for producing a plastic article and a blow molding tool for performing the method. The method comprises extruding an approximately tube-shaped preform, dividing the melt flow within the extrusion head or separating the extrudate exiting or already exited from the extrusion head, such that a preform having an approximately C-shaped cross section is obtained, forming the preform into a hollow part within a multipart blow molding tool using differential pressure, wherein an expansion and partial preforming of the preform first takes place with the blow molding tool partially closed, then in a further step at least one insert is inserted into the interior of the partially preformed article between the not completely closed blow molding tool and through the open side of the preform, and in a further step the blow molding tool is completely closed; wherein the article is completely formed, forming at least one at least partially circumferential pinch-off seam. | 2012-06-28 |
| 20120161374 | HYDROMETALLURGICAL PLANT OF NICKEL LATERITE ORE AND OPERATION METHOD THEREOF - In a hydrometallurgical plant of a nickel laterite ore having a plurality of lines of treatment facilities, the hydrometallurgical plant of the nickel laterite ore which is, even when a serious trouble will occur in said treatment facilities, capable of minimizing decrease in throughput caused by this, and restoring a normal operation state early, after eliminating the serious trouble, and an operation method thereof. | 2012-06-28 |
| 20120161375 | GAS SPRING PISTON, GAS SPRING ASSEMBLY AND METHOD - A gas spring piston includes a piston body with an end wall and a side wall that projects longitudinally from the end wall. The side wall includes an outer surface and a retainment ridge spaced longitudinally from the end wall such that the outer surface is disposed between the retainment ridge and the end wall. The retainment ridge projects radially-outwardly beyond the outer surface such that a shoulder surface is formed adjacent the outer surface. The outer surface includes an engagement feature that is dimensioned to compressively engage an associated flexible wall. The engagement feature is positioned along the outer surface in spaced relation to the end wall and the shoulder surface of the retainment ridge. A gas spring assembly and a method of assembling a gas spring that include such a gas spring piston are also disclosed. | 2012-06-28 |
| 20120161376 | SAFETY LANYARD AND MANUFACTURING METHOD THEREOF - This lanyard, which is movable by elasticity between a rest position and a stretched position, comprises a tubular sheath made from non-stretchable material, and a set of elastic threads joined to the sheath. | 2012-06-28 |
| 20120161377 | APPARATUS FOR PROCESS AUTOMATION USING A PIN AND BUSHING ARRAY - An apparatus comprises a plurality of bushings arranged and held together in an array; and a plurality of pins residing in the plurality of bushings, wherein the plurality of pins are for transferring samples. Manufacturing tolerances for inside diameters of the bushings and outside diameters of the pins substantially match to allowing the pins to slide freely within the bushings. The plurality of bushings can reside in one or more plates, each of which having plurality of holes, with the plurality of bushings being held together in the array. | 2012-06-28 |
| 20120161378 | POSITIONING APPARATUS - A positioning apparatus includes a base plate and a deflection mechanism mounted upon the base plate. The deflection mechanism includes a stationary platform, a rocker assembly and a deflection platform. The stationary platform is mounted over the base plate for placing and positioning a workpiece. The deflection platform is tiltably mounted over the stationary platform via the rocker assembly and the height of the stationary platform itself is adjustable. The rocker assembly comprises a first rocker and a second rocker of different lengths. | 2012-06-28 |
| 20120161379 | POST-PROCESSING APPARATUS AND IMAGE FORMING SYSTEM - The post-processing apparatus obliquely disposed is provided with a stacker | 2012-06-28 |
| 20120161380 | IMAGE RECORDING DEVICE - An image recording device includes a first arm configured to pivot between a first position and a second position in response to mounting and removal of a tray to and from the image recording device, a first driving roller attached to an end of the first arm and configured to convey a sheet from the tray toward a first conveying path, a recording unit configured to record an image on the sheet conveyed along the first conveying path, a second arm configured to pivot between a third position and a fourth position, and a second driving roller attached to an end of the second arm and configured to convey the sheet having an image recorded on one side thereof, along a second conveying path toward the first conveying path. The second arm pivots from the third position to the fourth position when the first arm pivots from the first position to the second position. | 2012-06-28 |
