24th week of 2013 patent applcation highlights part 14 |
Patent application number | Title | Published |
20130146817 | REUSE PASTE MANUFACTURING METHOD AND REUSE PASTE - A method of manufacturing a reuse paste includes the steps of preparing a fiber piece housing paste, fabricating a filtered recovery paste and fabricating a reuse paste. At the step of preparing a fiber piece housing paste, there is prepared a fiber piece housing paste including a conductive paste having conductive powder and a resin, and a fiber piece taken away from a prepreg to be used for manufacturing a circuit board. At the step of fabricating a filtered recovery paste, the fiber piece housing paste in a paste state is filtered as it is by using a filter and a filtered recovery paste is thus fabricated. At the step of fabricating a reuse paste, at least one of a solvent, a resin and a paste having a different composition from the filtered recovery paste is added to the filtered recovery paste, and the reuse paste is thus fabricated. | 2013-06-13 |
20130146818 | Anthra[2,3-b:7,6-b']dithiophene Derivatives and their Use as Organic Semiconductors - The invention relates to novel anthra[2,3-b:7,6-b′]dithiophene derivatives, methods of their preparation, their use as semiconductors in organic electronic (OE) devices, and to OE devices comprising these derivatives. | 2013-06-13 |
20130146819 | METHOD FOR MANUFACTURING COMPOSITE POSITIVE ELECTRODE ACTIVE MATERIAL - The invention relates to a method for manufacturing a composite positive electrode active material being a composite of a positive electrode active material and carbon nanotubes. The manufacturing method includes preparing an aqueous solution of a starting material of a positive electrode active material containing a starting material of the positive electrode active material, and an aqueous solution of solubilized carbon nanotubes containing the carbon nanotubes and a solubilizing material that is composed of a water-soluble polymer whose solubilisation retention rate of carbon nanotubes does not decrease with rising temperature; and synthesizing a positive electrode active material-carbon nanotube composite by mixing the aqueous solution of a starting material of a positive electrode active material and the aqueous solution of solubilized carbon nanotubes, and performing hydrothermal synthesis. | 2013-06-13 |
20130146820 | CONDUCTIVE PASTES - A conductive paste is provided. The conductive paste includes a conductive powder and a resin composition. The resin composition includes a polyester acrylate oligomer, a hydroxyalkyl acrylate (HAA) and a polyvinylpyrrolidone (PVP) derivative. The conductive powder and the resin composition have a weight ratio of 40-85:15-60. The polyester acrylate oligomer, the hydroxyalkyl acrylate (HAA) and the polyvinylpyrrolidone (PVP) derivative have a weight ratio of 15-70:10-60:3-40. | 2013-06-13 |
20130146821 | REDOX STIMULATED VARIABLE-MODULUS MATERIAL - A material having a first non-zero elastic modulus capable of reversibly changing the first non-zero elastic modulus to a second non-zero elastic modulus in response to a redox reaction occurring in the material. A method of producing a material that is reversibly cyclable between a first non-zero elastic modulus and a second non-zero elastic modulus, comprising: preparing a polymer comprising both crosslinks that do not depend on metal binding and functional groups capable of having oxidation-state specific binding constants to a metal ion; and doping the polymer with a solution containing the metal ion. | 2013-06-13 |
20130146822 | DISCHARGE SURFACE TREATMENT METHOD AND COATING BLOCK FOR DISCHARGE SURFACE TREATMENTS - Employing a compact molded from powder of metal or the like as an electrode | 2013-06-13 |
20130146823 | COMPRESSION KIT FOR INDEPENDENT SUSPENSION SYSTEM - A portable kit for compressing an elastic member in a suspension assembly of a vehicle includes a mounting bracket for attaching to an elastic member mount and having an insertion hole; an elongated member for inserting through the insertion hole and through an opening in a suspension control arm; a first affixing mechanism for securing the elongated member to the control arm; a mechanical cylinder for compressing the elastic member; and a second affixing mechanism for securing the mechanical cylinder to the elongated member. A hydraulic hand pump may also be included. | 2013-06-13 |
20130146824 | APPARATUS & METHODS FOR AN IMPROVED VEHICLE JACK HAVING A SCREW JACK ASSEMBLY - A support frame for elevating an object includes an object engaging portion connected to a guide assembly. The guide moves along a support assembly by actuation of an elevation assembly. The support assembly may be releasably connected to a base by a removable pin allowing the device to fold for storage. The guide includes a safety mechanism whereby a pin connected to the guide slidably engages apertures in the support assembly. The elevation assembly may include a threaded member connected to the guide, and an elongated support member threadably engaging the threaded member. Rotation of the elongated support member moves the guide along the support and elevates the object engaging portion. The elevation assembly may include a pulling force member connected to the guide assembly. | 2013-06-13 |
20130146825 | JACKING POLE - A jacking pole apparatus is disclosed. A jacking pole may include two tubular members, slidably engaged with one another in such a manner that they may extend or expand. A jacking pole may engage two surfaces or objects and extend therebetween in order to provide support. Further, a jacking pole may vertically displace an object or surface. A jacking pole utilizes locking mechanisms to remain in certain positions and provide continuous support for surface and objects. The locking mechanisms may also be utilized during vertical displacement in order to facilitate such motion. | 2013-06-13 |
20130146826 | BALANCING AND SYNCHRONIZING DEVICE FOR MACHINES FOR LAYING CABLES - Balancing and synchronizing device for a plant ( | 2013-06-13 |
20130146827 | Shipboard Winch With Guide Vanes - A shipboard winch having guide vanes includes a first drum and a second drum that are mounted on a frame so that the drums contra-rotate when the winch is activated. A plurality of guide vanes is positioned between the first drum and the second drum. Each guide vane is formed with a base and a distal lip that extends outwardly from the guide vane when the guide vane is oriented horizontally. The guide vanes are further formed with a decreasing taper from a maximum width at the base to a minimum width at the distal lip. For deployment/recovery, the cable is threaded around the first drum, through the guide vanes and around the second drum in a figure eight configuration. A feedback circuit is used to control the rotational torque of the drums to maintain a constant tension on a cable as it is deployed or retrieved. | 2013-06-13 |
20130146828 | AXIAL ACTUATING DEVICE - An actuating device for exerting a force that causes two components arranged to be rotatable relative to each other about an axis of rotation to be urged axially away from each other comprising a radial support element forming a first hydraulic pressure chamber and a second hydraulic pressure chamber, each of the pressure chambers surrounding the axis of rotation and the first pressure chamber being in fluid connection with the second pressure chamber. The actuating device further comprises a first piston axially supported on the first component for sealing the first pressure chamber in an axially displaceable way and a second piston axially supported on the second component for sealing the second pressure chamber in an axially displaceable way. | 2013-06-13 |
20130146829 | RESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - Resistive random access memory (RRAM) devices, and methods of manufacturing the same, include a RRAM device having a switching device, and a storage node connected to the switching device, wherein the storage node includes a first electrode, a metal oxide layer, and a second electrode sequentially stacked. The metal oxide layer contains a semiconductor material element affecting resistance of the storage node. | 2013-06-13 |
20130146830 | Semiconductor Devices and Methods of Manufacturing the Same - Semiconductor devices include lower interconnections, upper interconnections crossing over the lower interconnections, selection components disposed at crossing points of the lower interconnections and the upper interconnections, respectively, and memory components disposed between the selection components and the upper interconnections. Each of the selection components may include a semiconductor pattern having a first sidewall and a second sidewall. The first sidewall of the semiconductor pattern may have a first upper width and a first lower width that is greater than the first upper width. The second sidewall of the semiconductor pattern may have a second upper width and a second lower width that is substantially equal to the second upper width. | 2013-06-13 |
20130146831 | PHASE-CHANGE MEMORY DEVICE HAVING MULTIPLE DIODES - A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the semiconductor layer, | 2013-06-13 |
20130146832 | MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - A memory cell is provided that includes a reversible resistance-switching element above a substrate. The reversible resistance-switching element includes an etched material layer that includes an oxidized layer of the etched material layer above a non-oxidized layer of the etched material layer. Numerous other aspects are provided. | 2013-06-13 |
20130146833 | MEMORY CELLS HAVING A PLURALITY OF HEATERS - Resistive memory cells having a plurality of heaters and methods of operating and forming the same are described herein. As an example, a resistive memory cell may include a resistance variable material located between a first electrode and a second electrode, a first heater coupled to a first portion of the resistance variable material, a second heater coupled to a second portion of the resistance variable material, a third heater coupled to a third portion of resistance variable material, and a conductive material coupled to the first, second, and third heaters. | 2013-06-13 |
20130146834 | QUANTUM DOT-MATRIX THIN FILM AND METHOD OF PRODUCING THE SAME - A quantum dot-matrix thin film and a method of preparing a quantum dot-matrix thin film are provided. The thin film includes quantum dots; an inorganic matrix in which the quantum dots are imbedded; and an interface layer disposed between the quantum dots and the inorganic matrix to surround surfaces of the quantum dots. The method includes preparing a quantum dot solution in which quantum dots with inorganic ligands are dispersed; adding a matrix precursor to the quantum dot solution; coating the quantum dot solution comprising the matrix precursor on a substrate; and annealing the substrate coated with the quantum dot solution. | 2013-06-13 |
20130146835 | NANOSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME - A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. | 2013-06-13 |
20130146836 | CNT-BASED ELECTRONIC AND PHOTONIC DEVICES - The carbon nanotube-based electronic and photonic devices are disclosed. The devices are united by the same technology as well as similar elements for their fabrication. The devices consist of the vertically grown semiconductor nanotube having two Schottky barriers at the nanotube ends and one Schottky barrier at the middle of the nanotube. Depending on the Schottky barrier heights and bias arrangements, the disclosed devices can operate either as transistors, CNT MESFET and CNT Hot Electron Transistor, or as a CNT Photon Emitter. | 2013-06-13 |
20130146837 | LIGHT EMITTING DIODE WITH MULTIPLE TRANSPARENT CONDUCTIVE LAYERS AND METHOD FOR MANUFACTURING THE SAME - An LED includes a first semiconductor layer, a second semiconductor layer, an active layer, a first transparent conductive layer, and a second transparent conductive layer. The first transparent conductive layer is formed on the second semiconductor layer. The second transparent conductive layer is formed on the first transparent conductive layer. The thickness of the first transparent conductive layer is less than that of the second transparent conductive layer. The density of the first transparent conductive layer is larger than that of the second transparent conductive layer. The disclosure further includes a method for manufacturing the LED. | 2013-06-13 |
20130146838 | QUANTUM DOT DEVICE INCLUDING DIFFERENT KINDS OF QUANTUM DOT LAYERS - A quantum dot device includes: a cathode layer; an anode layer; an active layer that is disposed between the cathode layer and the anode layer and includes a quantum layer; and an electron movement control layer that is disposed between the cathode layer and the anode layer and includes a different kind of quantum layer having an energy level different from that of the quantum layer comprised in the active layer. | 2013-06-13 |
20130146839 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device includes a sapphire substrate; and an n contact layer, an n cladding layer, a light-emitting layer, a p cladding layer, and a p contact layer, each of the layers being formed of Group III nitride semiconductor, are sequentially deposited on the sapphire substrate. The n cladding layer includes two layers of a high impurity concentration layer and a low impurity concentration layer in this order on the n contact layer, and the low impurity concentration layer is in contact with the light-emitting layer. The low impurity concentration layer is a layer having a lower n-type impurity concentration than that of the high impurity concentration layer, which has an n-type impurity concentration of 1/1000 to 1/100 of the p-type impurity concentration of the p cladding layer and a thickness of 10 Å to 400 Å. | 2013-06-13 |
20130146840 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of Al | 2013-06-13 |
20130146841 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package includes a body having a cavity, at least one insulating layer disposed on the body, first and second electrode layers disposed on the insulating layer and electrically isolated from each other, at least one light emitting device disposed on a bottom surface of the cavity and electrically connected to the first and second electrode layer, a light-transmissive resin layer sealing the light emitting device disposed in the cavity, and a metal layer disposed on a rear surface of the body to face the light emitting device, wherein the light emitting device is grown in an m-direction on the (1123) plane of a substrate and includes a light emitting structure including a first conductive semiconductor layer, and active layer, and a second conductive semiconductor layer. | 2013-06-13 |
20130146842 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer. | 2013-06-13 |
20130146843 | Segmented Nanowires Displaying Locally Controllable Properties - Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy. | 2013-06-13 |
20130146844 | LIGHT DETECTOR AND METHOD FOR PRODUCING LIGHT DETECTOR - A first electrode layer is disposed on a substrate and a first active layer is disposed thereon. The first active layer includes a first barrier layer and a plurality of first quantum dots that are distributed in the first barrier layer and have a band gap narrower than that of the first barrier layer. A second electrode layer is disposed on the first active layer. On the second active layer, a second active layer is disposed. The second active layer includes a second barrier layer and a plurality of second quantum dots that are distributed in the second barrier layer and have a band gap narrower than that of the second barrier layer. A third electrode layer is disposed on the second active layer. The first quantum dots are larger than the second quantum dots. | 2013-06-13 |
20130146845 | TECHNIQUES FOR FORMING CONTACTS TO QUANTUM WELL TRANSISTORS - Techniques are disclosed for providing a low resistance self-aligned contacts to devices formed in a semiconductor heterostructure. The techniques can be used, for example, for forming contacts to the gate, source and drain regions of a quantum well transistor fabricated in III-V and SiGe/Ge material systems. Unlike conventional contact process flows which result in a relatively large space between the source/drain contacts to gate, the resulting source and drain contacts provided by the techniques described herein are self-aligned, in that each contact is aligned to the gate electrode and isolated therefrom via spacer material. | 2013-06-13 |
20130146846 | GRAPHENE FIELD EFFECT TRANSISTOR - Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material. | 2013-06-13 |
20130146847 | GRAPHENE FIELD EFFECT TRANSISTOR - Manufacturing a semiconductor structure including: forming a seed material on an insulator layer; forming a graphene field effect transistor (FET) on the seed material; and forming an air gap under the graphene FET by removing the seed material. | 2013-06-13 |
20130146848 | Novel Organic Light Emitting Materials - Novel phosphorescent metal complexes containing 2-phenylisoquinoline ligands with at least two substituents on the isoquinoline ring are provided. The disclosed compounds have low sublimation temperatures that allow for ease of purification and fabrication into a variety of OLED devices. | 2013-06-13 |
20130146849 | POLYMER AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - A polymer having a repeating unit represented by Formula 1, wherein R | 2013-06-13 |
20130146850 | Tandem White Organic Light Emitting Device - A tandem white organic light emitting device with improved efficiency, voltage and lifetime includes a first electrode and a second electrode opposing each other, a charge generation layer formed between the first electrode and the second electrode, a first stack disposed between the first electrode and the charge generation layer, the first stack including a first light emitting layer emitting blue light, and a second stack disposed between the charge generation layer and the second electrode, the second stack including a second light emitting layer including one or more hosts doped with a phosphorescent dopant emitting light having a longer wavelength than blue light, wherein the charge generation layer includes an n-type charge generation layer doped with a metal and a p-type charge generation layer made of an organic material. | 2013-06-13 |
20130146851 | Compounds Having Semiconducting Properties and Related Compositions and Devices - Disclosed are new compounds having semiconducting properties. Such compounds can be processed into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics. | 2013-06-13 |
20130146852 | ORGANIC LIGHT-EMITTING POLYMER AND DEVICE - Light-emitting and/or charge transporting polymers, methods of making the same, and organic light emitting devices comprising such polymers, the polymers comprising a repeat unit of formula (I): | 2013-06-13 |
20130146853 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided an organic light-emitting diode (OLED) display device, including: a first substrate on which a plurality of sub-pixel areas are defined; a plurality of first electrodes in the plurality of sub-pixel areas, respectively; and a plurality of light-emitting layers over the plurality of first electrodes and corresponding to the plurality of sub-pixel areas, respectively; wherein at least one of the plurality of light-emitting layers extends to a neighboring sub-pixel area among the plurality of sub-pixel areas, and has an occupied area in the neighboring sub-pixel area. | 2013-06-13 |
20130146854 | PHOSPHORESCENT SMALL MOLECULES THAT ARE BONDED TO INORGANIC NANOCRYSTAL HOST FOR ORGANIC LIGHT EMITTING DEVICES AND METHODS OF MAKING THE SAME - A first device comprising a first organic light emitting device (OLED) is described. The first OLED includes an anode, it cathode and an emissive layer disposed between the anode and the cathode. The emissive layer includes a phosphorescent emissive dopant and a host material, that includes nanocrystals. The phosphorescent emissive dopant is bonded to the host material by a bridge moiety. | 2013-06-13 |
20130146855 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - Disclosed herein is a display device, including: a substrate; a circuit part configured to include a drive element; a planarization insulating layer; an electrically-conductive layer including a plurality of first electrodes and an auxiliary interconnect; an aperture-defining insulating layer configured to insulate the plurality of first electrodes from each other and have an aperture through which part of the first electrode is exposed; a plurality of light emitting elements; and a separator configured to be formed by removing the planarization insulating layer at a position between a display area, in which the plurality of light emitting elements connected to the drive element are disposed, and a peripheral area which is surrounding the display area. A method of manufacturing a display device is also provided. | 2013-06-13 |
20130146856 | COMPOUNDS FOR USE IN LIGHT-EMITTING DEVICES - Compounds including optionally substituted Ring Systems 1-4 may be used as host in light-emitting devices. | 2013-06-13 |
20130146857 | PIXEL STRUCTURE OF ORGANIC LIGHT EMITTING DEVICE - A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device. | 2013-06-13 |
20130146858 | SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES - The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C | 2013-06-13 |
20130146859 | SELF-ALIGNED COVERAGE OF OPAQUE CONDUCTIVE AREAS - The invention relates to a method enabling to apply cheap manufacturing techniques for producing reliable and robust organic thin film device (EL) comprising the steps of providing (P) a transparent substrate ( | 2013-06-13 |
20130146860 | METHOD OF MANUFACTURING GAS BARRIER FILM AND ORGANIC PHOTOELECTRIC CONVERSION ELEMENT - The present invention provides: a method of manufacturing a gas barrier film, which is manufactured at high productivity, and has extremely high gas barrier performance and stability thereof with time, excellent surface smoothness and bending resistance, and high durability; a gas barrier film obtained using the method; and an organic photoelectric conversion element using the gas barrier film. In the method, after forming a coated layer by applying a coating liquid containing polysilazane to a substrate, a gas barrier layer is formed by applying vacuum ultraviolet light to the coated layer surface thus formed. The method is characterized in that the coated layer is irradiated with the vacuum ultraviolet light, while drying the solvent in the e coated layer. | 2013-06-13 |
20130146861 | ORGANIC EL PANEL, DISPLAY DEVICE USING SAME, AND METHOD FOR PRODUCING ORGANIC EL PANEL - An organic EL panel includes first electrode, second electrode; organic light-emitting layer of each of RGB colors, and functional layer disposed between the first electrode and the light-emitting layer. The functional layers of RGB colors have the same film thickness. Film thickness of each of the functional layers of RG colors corresponds to a first local maximum of light-extraction efficiency of light before passing through a color filter, and film thickness of the functional layer of B color corresponds to a value of light-extraction efficiency smaller than a first local maximum of light-extraction efficiency of light before passing through a color filter. The light-emitting layers of RGB colors differ in film thickness, such that the functional layers of RGB colors have the film thickness. Accordingly, the light of each of RGB colors emitted externally after passing through the color filter exhibits a local maximum of light-extraction efficiency. | 2013-06-13 |
20130146862 | ARRAY SUBSTRATE INCLUDING THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - An array substrate includes: a substrate; a gate line and a gate electrode on the substrate; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including a first insulator and a second insulator on the first insulator, wherein the first insulator includes an aluminum oxide material and has a first thickness, and the second insulator includes a hafnium oxide material and has a second thickness; an oxide semiconductor layer on the gate insulating layer over the gate electrode; a data line over the gate insulating layer; a source electrode and a drain electrode contacting the oxide semiconductor layer; a passivation layer on the data line, the source electrode and the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to a drain electrode through a drain contact hole. | 2013-06-13 |
20130146863 | HIGH QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON - Substrates of GaN over silicon suitable for forming electronics devices such as heterostructure field effect transistors (HFETs), and methods of making the substrates, are disclosed. Voids in a crystalline Al | 2013-06-13 |
20130146864 | THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A method for manufacturing a thin film transistor array panel includes forming a gate line and a gate electrode protruding from the gate line on a substrate; forming a gate insulating layer on the gate line and the gate electrode; depositing sequentially a semiconductor material and a metal material on the gate insulating layer; performing a first etching operation on the semiconductor material and the metal material using a first mask to form a semiconductor layer and a metal layer, the metal layer including a data line, a source electrode, and a drain electrode, in which the drain electrode protrudes from the data line, and the source electrode and the drain electrode having an integral shape; and performing a second etching operation on the metal layer using a second mask to divide the source electrode and the drain electrode. | 2013-06-13 |
20130146865 | HIGH-SENSITIVITY TRANSPARENT GAS SENSOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a high-sensitivity transparent gas sensor and a method for manufacturing the same. The transparent gas sensor includes a transparent substrate, a transparent electrode formed on the transparent substrate and a transparent gas-sensing layer formed on the transparent electrode. The transparent gas-sensing layer has a nanocolumnar structure having nanocolumns formed on the transparent electrode and gas diffusion pores formed between the nanocolumns. | 2013-06-13 |
20130146866 | CIRCUIT BOARD, DISPLAY DEVICE, AND METHOD FOR PRODUCING CIRCUIT BOARD - A circuit board ( | 2013-06-13 |
20130146867 | DISPLAY PANEL AND DISPLAY DEVICE - In a transparent substrate ( | 2013-06-13 |
20130146868 | FIELD EFFECT TRANSISTOR - A field effect transistor (FET) is provided. The active layer of this FET is composed of at least two different amorphous metal oxide semiconductor layer stacked together. Therefore, the two opposite surfaces of the active layer can have different band gap values. | 2013-06-13 |
20130146869 | TRANSISTOR AND METHOD FOR MANUFACTURING THE TRANSISTOR - It is an object to reduce characteristic variation among transistors and reduce contact resistance between an oxide semiconductor layer and a source electrode layer and a drain electrode layer, in a transistor where the oxide semiconductor layer is used as a channel layer. In a transistor where an oxide semiconductor is used as a channel layer, at least an amorphous structure is included in a region of an oxide semiconductor layer between a source electrode layer and a drain electrode layer, where a channel is to be formed, and a crystal structure is included in a region of the oxide semiconductor layer which is electrically connected to an external portion such as the source electrode layer and the drain electrode layer. | 2013-06-13 |
20130146870 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically connected to the source and drain electrodes are formed over the first insulating film; heat treatment is performed on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed; oxygen doping treatment is performed on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film; a second insulating film is formed over the oxide semiconductor film; and a gate electrode is formed over the second insulating film so as to overlap with the oxide semiconductor film. | 2013-06-13 |
20130146871 | THIN FILM SEMICONDUCTOR MATERIAL PRODUCED THROUGH REACTIVE SPUTTERING OF ZINC TARGET USING NITROGEN GASES - The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility. | 2013-06-13 |
20130146872 | Semiconductor Device and Method of Forming Conductive Pillars Having Recesses or Protrusions to Detect Interconnect Continuity Between Semiconductor Die and Substrate - A semiconductor device has a semiconductor die and conductive pillar with a recess or protrusion formed over a surface of the semiconductor die. The conductive pillar is made by forming a patterning layer over the semiconductor die, forming an opening with a recess or protrusion in the patterning layer, depositing conductive material in the opening and recess or protrusion, and removing the patterning layer. A substrate has bump material deposited over a conductive layer formed over a surface of the substrate. The bump material is melted. The semiconductor die is pressed toward the substrate to enable the melted bump material to flow into the recess or over the protrusion if the conductive pillar makes connection to the conductive layer. A presence or absence of the bump material in the recess or protrusion of the conductive pillar is detected by X-ray or visual inspection. | 2013-06-13 |
20130146873 | Integrated Mechanical Device for Electrical Switching - An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations. | 2013-06-13 |
20130146874 | SEMICONDUCTOR INTEGRATED CIRCUIT - There is offered a semiconductor integrated circuit provided with a function to electrically identify a location where a defect such as chipping of an LSI die or separation of resin is caused. Corresponding to each of the four corners of a semiconductor substrate, each of L-shaped first through fourth peripheral wirings having a first end and a second end is disposed on a periphery of the semiconductor substrate. The first end of each of the first through fourth peripheral wirings is connected with a power supply wiring. Each of first through fourth detection circuits detects breaking of corresponding each of the first through fourth peripheral wirings in response to a voltage at the second end of corresponding each of the first through fourth peripheral wirings, and outputs corresponding each of first through fourth detection signals to corresponding each of output pads. | 2013-06-13 |
20130146875 | SPLIT ELECTRODE FOR ORGANIC DEVICES - A device is provided. The device includes a first electrode, an organic layer disposed over the first electrode and a second electrode disposed over the organic layer. The second electrode further includes a first conductive layer having an extinction coefficient and an index of refraction, a first separation layer disposed over the first conductive layer, and a second conductive layer disposed over the first separation layer. The first separation layer has an extinction coefficient that is at least 10% different from the extinction coefficient of the first conductive layer at 500 nm, or an index of refraction that is at least 10% different from the index of refraction of the first conductive layer at 500 nm. The device also includes a barrier layer disposed over the second conductive layer. | 2013-06-13 |
20130146876 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a thin film transistor array substrate includes the following two steps: depositing a first metal layer on a substrate; and processing the first metal layer through coating photoresist, exposing, developing, etching, and stripping photoresist processes to form a light blocking metal portion and a lower electrode of a first storage capacitor simultaneously. With the manufacturing method of the present disclosure, the light blocking metal portion can protect components of TFTs from being exposed to strong light during the manufacturing process, which can improve a stability of the TFT. | 2013-06-13 |
20130146877 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus including: a substrate; a first electrode on the substrate; a second electrode on the first electrode; an intermediate layer between the first electrode and the second electrode, the intermediate layer being electrically connected with the first electrode and the second electrode, and including an organic emission layer; and a light reflection member overlapping a portion of the intermediate layer, the portion of the intermediate layer being less than an entire region of the intermediate layer. | 2013-06-13 |
20130146878 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a buffer layer that is on a substrate and includes nanoparticles including nickel (Ni), a pixel electrode on the buffer layer, an organic emission layer on the pixel electrode, and an opposite electrode on the organic emission layer. A method of manufacturing the organic light-emitting display apparatus is provided. | 2013-06-13 |
20130146879 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed is a semiconductor device in which an n-channel type first thin film transistor and a p-channel type second thin film transistor are provided on the same substrate. The first thin film transistor has a first semiconductor layer ( | 2013-06-13 |
20130146880 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor liquid crystal display (TFT-LCD) array substrate and a manufacturing method thereof are provided. The TFT-LCD array substrate comprises a gate line and a data line. A pixel electrode and a thin film transistor (TFT) are formed in a pixel region defined by intersecting of the gate line and the data line. A light-blocking layer is formed over a TFT channel region of the thin film transistor. | 2013-06-13 |
20130146881 | AREA SENSOR AND DISPLAY APPARATUS PROVIDED WITH AN AREA SENSOR - An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light. | 2013-06-13 |
20130146882 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first terminal of the first transistor is electrically connected to a first wiring. A second terminal of the first transistor is electrically connected to a second wiring. A gate of the second transistor is electrically connected to a third wiring. A first terminal of the second transistor is electrically connected to the third wiring. A second terminal of the second transistor is electrically connected to a gate of the first transistor. A channel region is formed using an oxide semiconductor layer in each of the first transistor and the second transistor. The off-state current of each of the first transistor and the second transistor per channel width of 1 μm is 1 aA or less. | 2013-06-13 |
20130146883 | SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND MANUFACTURING EQUIPMENT OF SEMICONDUCTOR THIN FILM - A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less. | 2013-06-13 |
20130146884 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include depositing a first amorphous film having a first impurity, depositing a third amorphous lower-layer film on the first amorphous film, forming microcrystals on the third amorphous lower-layer film, depositing a third amorphous upper-layer film on the third amorphous lower-layer film to cover the microcrystals, depositing a second amorphous film having a second impurity on the third amorphous upper-layer film, and radiating microwaves to crystallize the third amorphous lower-layer film and the third amorphous upper-layer film to form a third crystal layer, and crystallize the first amorphous film and the second amorphous film to form a first crystal layer and a second crystal layer. | 2013-06-13 |
20130146885 | Vertical GaN-Based Metal Insulator Semiconductor FET - A semiconductor structure includes a III-nitride substrate having a top surface and an opposing bottom surface and a first III-nitride layer of a first conductivity type coupled to the top surface of the III-nitride substrate. The semiconductor structure also includes a second III-nitride layer of a second conductivity type coupled to the first III-nitride layer along a vertical direction and a third III-nitride layer of a third conductivity type coupled to the second III-nitride layer along the vertical direction. The semiconductor structure further includes a first trench extending through a portion of the third III-nitride layer to the first III-nitride layer, a second trench extending through another portion of the third III-nitride layer to the second III-nitride layer, and a first metal layer coupled to the second and the third III-nitride layers. | 2013-06-13 |
20130146886 | Vertical GaN JFET with Gate Source Electrodes on Regrown Gate - A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure. | 2013-06-13 |
20130146887 | DIODE FOR USE IN A SWITCHED MODE POWER SUPPLY - A tunable depletion diode is provided. Within this depletion diode, there is a depletion mode transistor that is coupled to the anode terminal at its gate and the cathode terminal at its drain. A diode is coupled between the source of the depletion mode transistor and the anode terminal, and a variable capacitor is coupled between the source of the depletion mode transistor and the anode terminal, where the capacitance of the variable capacitor is controls the reverse recovery time of the tunable depletion diode. | 2013-06-13 |
20130146888 | MONOLITHIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a monolithic semiconductor device including: a substrate; a high electron mobility transistor (HEMT) structure that is a first device structure formed on the substrate; and a laterally diffused metal oxide field effect transistor (LDMOSFET) structure that is a second device structure formed to be connected with the HEMT structure on the substrate.The monolithic semiconductor device according to preferred embodiments of the present invention is a device having characteristics of a normally-off device while maintaining high current characteristics in a normally-on state, thereby improving high current and high voltage operation characteristics. | 2013-06-13 |
20130146889 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An embodiment of a compound semiconductor device includes: a substrate; a nitride compound semiconductor stacked structure formed on or above the substrate; and a gate electrode, a source electrode and a drain electrode formed on or above the compound semiconductor stacked structure. A recess positioning between the gate electrode and the drain electrode in a plan view is formed at a surface of the compound semiconductor stacked structure. | 2013-06-13 |
20130146890 | HIGH ELECTRON MOBILITY TRANSISTOR - A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure. | 2013-06-13 |
20130146891 | ENHANCEMENT-MODE HFET CIRCUIT ARRANGEMENT HAVING HIGH POWER AND A HIGH THRESHOLD VOLTAGE - A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes a load resistive element connected to the common junction. The drain of the enhancement-mode HFET serves as the input drain node, the source of the enhancement-mode HFET serves as the input source node and a second terminal of the voltage shifter serves as the input gate node. | 2013-06-13 |
20130146892 | METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING ELEMENT USING THE SAME - A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element | 2013-06-13 |
20130146893 | SIC CRYSTALLINE ON SI SUBSTRATES TO ALLOW INTEGRATION OF GAN AND SI ELECTRONICS - A silicon substrate with a GaN-based device and a Si-based device on the silicon substrate is provided. The silicon substrate includes the GaN-based device on a SiC crystalline region. The SiC crystalline region is formed in the silicon substrate. The silicon substrate also includes the Si-based device on a silicon region, and the silicon region is next to the SiC crystalline region on the silicon substrate. | 2013-06-13 |
20130146894 | BIPOLAR JUNCTION TRANSISTOR STRUCTURE FOR REDUCED CURRENT CROWDING - The present disclosure relates to a bipolar junction transistor (BJT) structure that significantly reduces current crowding while improving the current gain relative to conventional BJTs. The BJT includes a collector, a base region, and an emitter. The base region is formed over the collector and includes at least one extrinsic base region and an intrinsic base region that extends above the at least one extrinsic base region to provide a mesa. The emitter is formed over the mesa. The BJT may be formed from various material systems, such as the silicon carbide (SiC) material system. In one embodiment, the emitter is formed over the mesa such that essentially none of the emitter is formed over the extrinsic base regions. Typically, but not necessarily, the intrinsic base region is directly laterally adjacent the at least one extrinsic base region. | 2013-06-13 |
20130146895 | PINCH-OFF CONTROL OF GATE EDGE DISLOCATION - The embodiments of processes and structures described provide mechanisms for improving the mobility of carriers. A dislocation is formed in a source or drain region between gate structures or between a gate structure and an isolation structure by first amortizing the source or drain region and then recrystallizing the region by using an annealing process with a low pre-heat temperature. A doped epitaxial material may be formed over the recrystallized region. The dislocation and the strain created by the doped epitaxial material in the source or drain region help increase carrier mobility. | 2013-06-13 |
20130146896 | SEMICONDUCTOR OPTICAL DEVICE HAVING AN AIR MEDIA LAYER AND THE METHOD FOR FORMING THE AIR MEDIA LAYER THEREOF - A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer. | 2013-06-13 |
20130146897 | 4h-SiC SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE - A trench groove is formed and a silicon oxide film is buried in the periphery of a channel region of (0001) surface 4h-SiC semiconductor element. The oxide film in the trench groove is defined in such a planar layout that a tensile strain is applied along the direction of the c-axis and a compressive strain is applied along two or more of axes on a plane perpendicular to the c-axis. For example, trench grooves buried with an oxide film may be configured to such a layout that they are in a trigonal shape surrounding the channel, or are arranged symmetrically with respect to the channel as a center when arranged discretely. | 2013-06-13 |
20130146898 | SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF - The present application provides a method of fabricating a metal oxide semiconductor field effect transistor. The method includes the steps of forming a source region on a silicon carbide layer and annealing the source region. A gate oxide layer is formed on the source region and the silicon carbide layer. The method further includes providing a gate electrode on the gate oxide layer and disposing a dielectric layer on the gate electrode and the gate oxide layer. The method further includes etching a portion of the dielectric layer and a portion of the gate oxide layer to form sidewalls on the gate electrode. A metal layer is disposed on the gate electrode, the sidewalls and the source region. The method further includes forming a gate contact and a source contact by subjecting the metal layer to a temperature of at least about 800° C. The gate contact and the source contact comprise a metal silicide. The distance between the gate contact and the source contact is less than about 0.6 μm. A vertical SiC MOSFET is also provided. | 2013-06-13 |
20130146899 | CMOS SENSOR WITH IMAGE SENSING UNIT INTEGRATED THEREIN - A complementary metal-oxide semiconductor (CMOS) sensor with an image sensing unit integrated therein is provided. The CMOS sensor includes a first substrate, a CMOS circuit, and a sensing device. The first substrate has the image sensing unit formed thereon. The CMOS circuit is disposed on the first substrate and has a receiving space. The sensing device is disposed in the receiving space. The image sensing unit is located at a position from which the image sensing unit can monitor the sensing device. Accordingly, the image sensing unit monitors the sensing device by sensing its image. | 2013-06-13 |
20130146900 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a switching element, a protecting layer, an organic layer, a first pixel electrode and a second pixel electrode. The switching element is on the base substrate, and includes a gate electrode, a source electrode and a drain electrode. The protecting layer is on the switching element, and includes a first hole exposing the drain electrode. The organic layer is on the protecting layer, and includes a second hole which exposes a side surface of the protecting layer which defines the first hole and exposes a top surface of the protecting layer which is adjacent to the side surface of the protecting layer. The first pixel electrode is on the organic layer. The second pixel electrode overlaps the first pixel electrode, and is electrically connected to the drain electrode via the first and second holes. | 2013-06-13 |
20130146901 | COMPRESSION VOLUME COMPENSATION - A liquid-filled light emitting diode (LED) bulb including a base, a shell, one or more LEDs, a thermally conductive liquid, and a bladder. The shell is connected to the base and the thermally conductive liquid is held within the shell. The one or more LEDs are disposed within the shell and immersed in the thermally conductive liquid. The bladder is also immersed in the thermally conductive liquid and is configured to compensate for expansion of the thermally conductive liquid. | 2013-06-13 |
20130146902 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a metal pattern, a first insulation layer pattern and a second insulation layer pattern. The metal pattern is on a base substrate. The first insulation pattern is on the metal pattern and includes one of a silicon nitride (SiN | 2013-06-13 |
20130146903 | DISPLAY UNIT AND METHOD OF MANUFACTURING THE SAME, ELECTRONIC APPARATUS, ILLUMINATION UNIT, AND LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A display unit includes: a plurality of light-emitting devices; and a separation section disposed between any adjacent two of the plurality of light-emitting devices and including a photoexcited material. A light-emitting device includes: an excitation light source; a wavelength conversion layer converting excitation light emitted from the excitation light source into light of a wavelength different from a wavelength of the excitation light; and a wavelength selection film disposed on a surface farther from the excitation light source of the wavelength conversion layer. | 2013-06-13 |
20130146904 | Optoelectronic Structures with High Lumens Per Wafer - An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens. | 2013-06-13 |
20130146905 | Light Emitting, Photovoltaic Or Other Electronic Apparatus and System - The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap. | 2013-06-13 |
20130146906 | ULTRAVIOLET SEMICONDUCTOR LIGHT EMITTING DEVICE - An ultraviolet light emitting device includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a first reflective layer under the active layer; and a second conductive semiconductor layer under the first reflective layer. The first reflective layer comprises a plurality of compound semiconductor layers. The compound semiconductor layer comprises at least two semiconductor materials. The contents of the at least two semiconductor materials are different from each other. | 2013-06-13 |
20130146907 | Ultraviolet Reflective Contact - A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers. | 2013-06-13 |
20130146908 | ILLUMINATION DEVICE - An illumination device including a substrate, a first conductive layer, a second conductive layer, a self-illuminating layer, and a first auxiliary conductive pattern layer is provided. The first conductive layer and the second conductive layer are disposed on the substrate. The self-illuminating layer is located between the first conductive layer and the second conductive layer to define an illumination region on the substrate. The first auxiliary conductive pattern layer is in contact with the first conductive layer and has an impedance smaller than that of the first conductive layer. A ratio of a perimeter (um) of the first auxiliary conductive pattern layer occupied in the illumination region to an area (um | 2013-06-13 |
20130146909 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a semiconductor layer including a light emitting layer, a p-side electrode provided on a second surface of the semiconductor layer, and an n-side electrode provided on the semiconductor layer to be separated from the p-side electrode. The p-side electrode includes a plurality of contact metal selectively provided on the semiconductor layer in contact with the second surface, a transparent film provided on the semiconductor layer in contact with the second surface between the plurality of contact metal, and a reflective metal provided on the contact metal and on the transparent film in contact with the contact metal, the reflective metal including silver. A surface area of a surface of the reflective metal on the light emitting layer side is greater than the sum total of a surface area of the plurality of contact metal contacting the semiconductor layer. | 2013-06-13 |
20130146910 | LIGHT EMITTING DIODE CHIP - A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence. | 2013-06-13 |
20130146911 | LIGHT EMITTING DIODE PACKAGE AND LENS MODULE USED THEREIN - An LED package includes an LED die and a lens module. The lens module covers the LED die. Light emitted from the LED die travels through the lens module. The lens module includes a concave lens and a convex lens with a smaller radial dimension than that of the concave lens. The concave lens covers the LED die. The convex lens is attached on a center of a surface of the concave lens away from the LED die. Optical axes of the concave lens and the convex lens are both collinear with a central axis of the LED die. Light from the LED die is diverged by the lens module to a peripheral side of the LED package. | 2013-06-13 |
20130146912 | ELECTRONIC DEVICE - An electronic device including an insulating substrate, a plurality of conductive vias and a chip is provided. The insulating substrate has an upper surface and a lower surface opposite to each other. The conductive vias pass through the insulating substrate. The chip is disposed on the upper surface of the insulating substrate and includes a chip substrate, a semiconductor layer and a plurality of contacts. The semiconductor layer is located between the chip substrate and the contacts. The contacts are electrically connected to the conductive vias. The material of the insulating substrate and the material of the chip substrate are the same. | 2013-06-13 |
20130146913 | ELECTRONIC DEVICE - An electronic device including an insulating substrate, a chip and a patterned conductive layer is provided. The insulating substrate has an upper surface and a lower surface opposite to each other. The chip is disposed above the upper surface of the insulating substrate. The patterned conductive layer is disposed between the upper surface of the insulating substrate and the chip. The chip is electrically connected to an external circuit via the patterned conductive layer. Heat generated by the chip is transferred to external surroundings via the patterned conductive layer and the insulating substrate. | 2013-06-13 |
20130146914 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide. | 2013-06-13 |
20130146915 | LIGHT EMITTING DIODE AND FLIP-CHIP LIGHT EMITTING DIODE PACKAGE - A light emitting diode including a first doped layer, a light emitting layer, a second doped layer and a substrate is provided. A plurality of first grooves penetrate through the second doped layer and the light emitting layer. Thus, a partial surface of the first doped layer is exposed. At least one of the plurality of first grooves extends to edges of the second dope layer and the light emitting layer. An insulating layer is disposed over a part of second doped layer and extends to sidewalls of the first grooves. A first contact is set in the first grooves and electrically connected to the first doped layer. A second contact is set on the second doped layer and electrically connected to the second doped layer. By the first grooves, the first contact can be electrically connected to the first doped layer for improving current spreading. | 2013-06-13 |
20130146916 | NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING DEVICE - A nitride semiconductor ultraviolet light-emitting device includes at least one first conductivity-type nitride semiconductor layer, a nitride semiconductor emission layer, at least one second conductivity-type nitride semiconductor layer and a transparent conductive film of crystallized Mg | 2013-06-13 |