23rd week of 2011 patent applcation highlights part 15 |
Patent application number | Title | Published |
20110133095 | RADIATION SENSOR AND RADIATION IMAGE DETECTION APPARATUS - Provided is a radiation sensor comprising: a phosphor layer that converts incident radiation into converted light containing a first light component having a first wavelength region that includes a maximum peak wavelength different from a maximum peak wavelength of the radiation, and a second light component having a second wavelength region of 400 nm to 460 nm, different from that of the radiation and the first wavelength region; an organic photoelectric conversion layer; and an insulating substrate provided with a charge detection layer, and that includes a storage capacitor and a thin film transistor having an oxide semiconductor active layer, wherein the first and second light components each pass through the organic photoelectric conversion layer and arrive at the oxide semiconductor active layer, and wherein an intensity of the second light component is lower than an intensity of the first light component. | 2011-06-09 |
20110133096 | DIGITAL X-RAY DETECTOR ASSEMBLY - In one embodiment, a digital X-ray detector is provided with a detector assembly that includes a support panel, a digital detector array with a rear side of the detector array being secured to a front side of the support panel, a backscattered X-ray and reflected light absorption layer disposed between the detector array and the support panel, a rear shock absorbing structure secured to a rear side of the support panel, and a front shock absorbing structure secured to a front side of the detector array. The digital X-ray detector further includes a shell assembly surrounding the detector assembly and secured to the rear shock absorbing structure. In another embodiment, a method is provided for assembling a digital X-ray detector. | 2011-06-09 |
20110133097 | Neutron Detection - An electron multiplier includes a neutron-sensitive composition having silicon oxide, lead oxide, boron-10 enriched boron oxide, and yttrium oxide. The composition is capable of interacting with neutrons to form an electron cascade. The electron multiplier can be in the form of a microchannel plate, a microfiber plate, or a microsphere plate. | 2011-06-09 |
20110133098 | ION DIFFUSING APPARATUS AND ION GENERATING CARTRIDGE - Disclosed is an ion diffusing apparatus that can realize easy replacement of an ion generator and can maintain a stable ion supplying capability. Also disclosed is an ion generating cartridge. In the ion diffusing apparatus, the ion generator is so configured that the generator is detachable for easy maintenance, and can deliver the positive ions and negative ions to a position remote from the apparatus in a room while uniformly generating positive ions and negative ions. An ion diffusing apparatus ( | 2011-06-09 |
20110133099 | SILICON CONCENTRATION MEASURING INSTRUMENT - The present invention is an instrument that detects a trace amount of silicon contained in a sample solution with simple means and measures a silicon concentration in the sample solution, and adapted to include: an excitation light irradiation part that irradiates the sample solution with excitation light for silicon; a light detection part that detects fluorescence and/or scattering light emitted from silicon in the sample solution irradiated with the excitation light; and a calculation part that calculates the silicon concentration in the sample solution from intensities or an intensity of the fluorescence and/or the scattering light. | 2011-06-09 |
20110133100 | METHOD OF PUMPING QUANTUM DOTS - Strongly confined semiconductor quantum dots theoretically offer for broadband and continuous tunability of their emitting wavelength based upon simply varying the particle size. However, prior art consistently has demonstrated a lower particle size limit below which optical gain cannot be achieved, for example 2.3 nm for CdSe in toluene. As such the prior art points to combinations of alternative materials and host media as the route to achieving the goal of broadband emission sources using quantum dots. However, according to the invention optical gain can be achieved in quantum dots below these previous experimental limits by resonantly pumping the quantum dots to a specific excitonic state, i.e. electron position relative to the quantum dot, such that the multiexcitonic interferences are minimized. Using this approach optical gain in CdSe of R=2.1 nm and 1.5 nm has been demonstrated in the yellow/amber region of the visible spectrum. | 2011-06-09 |
20110133101 | MODULAR IMAGING SYSTEM, MODULES FOR THIS SYSTEM AND METHOD IMPLEMENTED USING THIS SYSTEM - An imaging device including an illumination module including at least one emitter for emitting at least one excitation beam, a scanning and injection module including an image guide, a proximal end and a distal end of which are linked by a plurality of optical fibers, and a scanning and injection optical system configured to alternately inject the at least one excitation beam into an optical fiber of the image guide from the proximal end of the image guide, and a detection module including at least one detector for detecting at least one luminous flux collected at the distal end of the image guide. At least one of the illumination module and the detection module is optically conjugated with the scanning and injection module by a conjugating optical fiber. | 2011-06-09 |
20110133102 | METHOD AND ARRANGEMENT FOR DETECTING A SURFACE OF AN OBJECT - The invention relates to a method for optically detecting surfaces wherein strip patterns are projected onto the surface, images are captured, and the three-dimensional contour thereof is determined from the reproduction of the strip pattern on the surface of the object. The aim of the invention is to prevent reflections that interfere with the images and as a result, the surface of the object is covered with a layer of a fluorescent material, is then radiated with ultraviolet radiation, and the radiation emitted by the fluorescent material in the visible light is detected. | 2011-06-09 |
20110133103 | INDICATOR DEVICES AND ARTICLES COMPRISING THE INDICATOR DEVICE - An indicator device comprising a first carrier material; a first pigment disposed in the first carrier material, the first pigment capable of being degraded by exposure to UV radiation; and wherein the first carrier material is configured so as to have a varying thickness such that upon exposure to UV radiation, a visible change in the pigment will occur which will result in a varying visible change over a first surface of the first carrier material | 2011-06-09 |
20110133104 | OPTICAL MANIPULATION OF MICRO-PARTICLES - A method for manipulating one or more particles comprising exposing the particle(s) to a beam of radiation that is able to lift and or impart an acceleration to the particle(s) to cause it to move in a curved trajectory. | 2011-06-09 |
20110133105 | Automatic faucet with control of water temperature and water flow - This disclosure presents an improved automatic faucet/sink. Conventional automatic faucets, such as are present in public locations outside of the home, such as restaurants and roadside rest-stops, allow the on/off control of water flow. Existing automatic faucets do not allow for control over temperature of the water flow. This invention will provide hygienic access to the water faucet for washing the hands since the user does not have to touch the faucet or sink for control over water flow or temperature. Control of water temperature will represent an improvement in automatic faucets. | 2011-06-09 |
20110133106 | Method and Device for Controlling an Actuator - In a method and a device for controlling an actuator, the first setpoint value for the position of the actuator is predefined. A change in the setpoint value for the control of the actuator to the first setpoint value is limited to a first setpoint value change limitation. For the reaching of the first setpoint value, a second setpoint value is predefined. A change in the setpoint value for the position of the actuator to the second setpoint value is limited to a second setpoint value change limitation. If the actual value of the change of the setpoint value to the first setpoint value using the first setpoint value change limitation would be greater than the change of the setpoint value to the second setpoint value using the second setpoint value change limitation, the first setpoint value is predefined for the setpoint value and the change in the setpoint value for the control of the actuator to the first setpoint value is limited according to the first setpoint value change limitation. | 2011-06-09 |
20110133107 | Fluid pressure control assembly - Assembly of multiple individual fluid pressure control solenoid valves and an individual fluid temperature sensor so packaged relative to a respective one of the individual solenoid valves as to permit direct or indirect fluid temperature measurement at individual solenoid valves. The assembly can include a lead-frame support (e.g. a printed circuit board) having multiple individual fluid pressure control solenoid valves and an individual transmission oil temperature sensor disposed on the lead-frame support in an oil passage that communicates to an output flow port of a respective one of the individual solenoid valves to provide transmission oil temperature information to a transmission electronic control unit, wherein the transmission electronic control unit provides command signals to the individual solenoid valves in response to the individual transmission oil temperature input signals associated with an individual solenoid valve to achieve more accurate pressure control. | 2011-06-09 |
20110133108 | FLUIDIC CONTROL ELEMENT - A fluidic control element has a housing that is assembled from first and second housing parts. A control space is formed between the housing parts into which two flow ducts open that are located in the first housing part. A sealing seat is arranged in the control space and is assigned to one of the flow ducts. A diaphragm is clamped between the housing parts. An actuating rocker element mounted for pivotal movement in the second housing part is configured with two lever arms, is movable between an opening position and a closing position, and is firmly attached to the diaphragm in an attachment area opposite the sealing seat. The actuating rocker element is provided with supporting areas for the diaphragm that are adjacent to the attachment area. | 2011-06-09 |
20110133109 | SELF-RELIEVING BALL VALVE SEAT - A system, in certain embodiments, includes an annular ball valve seat including an annular spring, which biases the annular ball valve seat axially. More specifically, in certain embodiments, the annular ball valve seat includes a main body section, a lip section extending from the main body section, and a seat groove between the main body section and the lip section, wherein the first annular spring is disposed within the seat groove. A first leg of the annular spring biases the lip section in a first axial direction and a second leg of the annular spring biases the main body section in a second axial direction opposite the first axial direction. The annular ball valve seat is configured to be disposed within a ball valve, on either side of a ball of the ball valve. The particular design of the annular ball valve seat enables pressure within a body cavity of the ball valve to be self-relieving. | 2011-06-09 |
20110133110 | PROCESS FOR PRODUCING A POLYMER DISPERSION - Process for producing a dispersion of polymer particles in an ionic liquid. | 2011-06-09 |
20110133111 | OXIDE AND MAGNETO-OPTICAL DEVICE - An oxide is provided that contains the oxide represented by Formula (I) as the main component thereof, that has a Verdet constant at a wavelength of 1.06 μm of at least 0.18 min/(Oe·cm), and that has a transmittance at a wavelength of 1.06 μm and for an optical length of 3 mm of at least 70%, | 2011-06-09 |
20110133112 | FERROMAGNETIC COMPOUND MAGNET - A ferromagnetic compound magnet in accordance with the present invention includes a ferromagnetic compound based on a binary alloy containing R—Fe system (R is a 4f transition element or Y) or a ternary allay containing R—Fe-T system (R is a 4f transition element or Y, and T is a 3d transition element except for Fe, or Mo, Nb or W), the ferromagnetic compound being characterized by: atomic percentage of the element R to the element Fe or to the elements Fe and T is 15% or lower; an element F is incorporated into an interstitial position in a crystal lattice of the alloy. The ferromagnetic compound is expressed in a chemical formula of: R | 2011-06-09 |
20110133113 | "MALONE" ENGINE WITH CARBON DIOXIDE IN LIQUID SOLUTION - The invention refers to applying carbon dioxide (CO2) solution in liquid, as working fluid in the “Malone” engines, by all possible pressures in the cool reservoir. These solutions have multiply greater coefficient of thermal expansion, by which will be avoided all defects of the till know existing engines. As a solvent can be used water and all kinds of other liquids, by which would be obtained an optimal combination between the different indicators. The invention is based on the discovery we made that the blood capillaries of all warm blooded (endothermic) animals represent the working part of “Stirling-Malone” engines with free pistons, in which the working fluid is the containing carbon dioxide blood plasma, the pistons represent the obtaining parachute-form in the capillaries red blood cells, the surrounding tissue is the external heat source, the heart is the external pump (the displacer), the skin veins and the lungs are the cool reservoir (the temperature sink), and all other veins and arteries are heat-transporting tubes and heat exchangers (regenerators). | 2011-06-09 |
20110133114 | REFRIGERATOR OIL COMPOSITION - Provided is a refrigerating machine oil composition including a base oil which contains at least one substance selected from the group consisting of monoether compounds, alkyleneglycol diethers, and polyoxyalkyleneglycol diethers having an average repetition number of an oxyalkylene group of 2 or less as a main component, and has a kinematic viscosity at 40° C. of 1 to 8 mm | 2011-06-09 |
20110133115 | PROCESS OF IMPROVING MELT VALUE OF MELTERS USING PROCESSED DESUGARIZED SOLUBLES (MDS) - An improved processing of sugar beet molasses (MDS—Molasses Desugarized Solubles) with the addition of applied heat at about 140° F. to about 180° F. for a time sufficient to, along with alkali degradation, at any given concentration of MDS, show an increase in overall melt value performance when compared to non-use of the heat step. | 2011-06-09 |
20110133116 | METHOD OF WATER TREATMENT - A method for securing the use of an aqueous medium under any substantial exclusion of metal ion interference is disclosed. A phosphonic acid compound containing: a selected phosphonate moiety and a moiety selected from a limited number of species; or hydrocarbon chains containing aminoalkylene phosphonic acid substituents; or alkylamino alkylene phosphonic acids containing an active moiety embodying N, O, and S. The technology can, by way of illustration, be used in numerous applications including secondary oil recovery, scale inhibition, industrial water treatment, paper pulp bleaching, dispersant treatment, sequestering application, brightness reversion avoidance and paper pulp treatment. | 2011-06-09 |
20110133117 | Method for manufacturing lithium titanate for lithium secondary battery active material - The present invention provides a method for manufacturing lithium titanate for a lithium secondary battery active material in which substantially no titanium dioxide, raw material, is present and which can provide excellent rapid charge and discharge characteristics and high-temperature storage characteristics to a lithium secondary battery when used as a negative electrode active material. The method for manufacturing lithium titanate for a lithium secondary battery active material according to the present invention comprises a first step of preparing a mixture comprising a Li compound, titanium dioxide having a specific surface area of 1.0 to 50.0 m | 2011-06-09 |
20110133118 | CRYSTALLIZED GLASS AND METHOD FOR PRODUCING THE SAME - The crystallized glass according to the present invention contains a LiVOPO | 2011-06-09 |
20110133119 | NICKEL OXIDE-STABILIZED ZIRCONIA COMPOSITE OXIDE, PROCESS FOR PRODUCTION THEREOF, AND ANODE FOR SOLID OXIDE TYPE FUEL CELL COMPRISING THE COMPOSITE OXIDE - The present invention relates to a nickel oxide-stabilized zirconia composite in which nickel oxide is dispersed uniformly, a process for readily producing the composite oxide, and an anode for a solid oxide fuel cell having excellent output characteristics. | 2011-06-09 |
20110133120 | Plant oil extraction - The invention provides for plant oil extraction. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 2011-06-09 |
20110133121 | N-Substituted Carbamic Acid Ester Production Method, Isocyanate Production Method Using Such N-Substituted Carbamic Acid Ester, And Composition For Transfer And Storage Of N-Substituted Carbamic Acid Ester Comprising N-Substituted Carbamic Acid Ester and Aromatic Hydroxy Compound - The present invention is a method for producing an N-substituted carbamic acid ester derived from an organic amine from an organic amine, a carbonic acid derivative and a hydroxy composition containing one or more types of hydroxy compounds, wherein the organic amine, the carbonic acid derivative and the hydroxy composition are reacted using a urethane production reaction vessel provided with a condenser, a gas containing the hydroxy composition, the compound having the carbonyl group derived from the carbonic acid derivative, and an ammonia formed as a by-product in the reaction, is introduced into the condenser provided in the urethane production reaction vessel, and the hydroxy composition and the compound having the carbonyl group derived from the carbonic acid derivative are condensed, and wherein a stoichiometric ratio of a hydroxy compound contained in the condensed hydroxy composition to the condensed compound having the carbonyl group derived from the carbonic acid derivative is 1 or more, and a ratio of number of carbonyl groups (—C(═O)—) contained in the compound having the carbonyl group derived from the carbonic acid derivative and number of ammonia molecules contained in the ammonia recovered as a gas from the condenser is 1 or less. | 2011-06-09 |
20110133122 | AROMATIC POLYESTERS, POLYOL BLENDS COMPRISING THE SAME AND RESULTANT PRODUCTS THEREFROM - The present invention discloses low viscosity aromatic polyester polyols suitable for blending with other polyols or other materials mutually compatible with the polyester polyols to achieve polyurethane and polyisocyanurate products. In particular the present invention discloses polyester polyols comprising the reaction of: A) an aromatic component comprising at 80 mole percent or greater of terephthalic acid; B) polyethylene glycol having a molecular weight from 150 to 1000; and C) a glycol different from the glycol of B); wherein A, B, and C are present in the reaction on a percent weight bases of 20 to 60 weight percent A); 40 to 75 weight percent of B); and 0 to 40 weight percent of C). | 2011-06-09 |
20110133123 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - The subject is to provide a liquid crystal composition that satisfies at least one characteristic of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a suitable optical anisotropy, a negatively large dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or that is suitably balanced regarding two characteristics thereof The subject is to provide an AM device that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth. | 2011-06-09 |
20110133124 | SUSPENSIONS OF PHOSPHATES OF AT LEAST ONE RARE EARTH ELEMENT SELECTED FROM AMONG CERIUM AND TERBIUM AND OPTIONALLY LANTHANUM AND LUMINOPHORES PRODUCED THEREFROM - Phosphate particulates of at least one rare-earth metal (Ln), with Ln being at least one rare-earth metal selected from among cerium and terbium and optionally lanthanum are in the form of a suspension in a liquid phase of primary isotropic monocrystalline monazite particles having an average size of at least 25 nm and agglomerated into secondary particles having an average size of at most 400 nm; useful luminophores are produced from such phosphate particulates. | 2011-06-09 |
20110133125 | INORGANIC PHOSPHOR PARTICLE - Inorganic phosphor particles are provided, each of which containing: a matrix including at least one compound selected from the group consisting of II Group-XVI Group compounds, XII Group-XVI Group compounds, and mixed crystals thereof; and at least one metal element selected from the group consisting of metal elements belonging to Groups 6 to 11 in second transition series and third transition series of the periodic table, the metal element forming a luminescent center including wherein at least 30% of all the inorganic phosphor particles are particles each having at least 10 stacking fault planes at intervals of at most 5 nm. | 2011-06-09 |
20110133126 | VERTICAL CYLINDRICAL REACTOR WITH THIN CATALYST BED - An axial thin-film reactor for carrying out catalytic reactions in the gas phase, comprising a cylindrical pressure casing, a device for letting in a gaseous reactant stream, a device for letting out a gaseous product stream, a device for receiving a catalyst bed arranged vertically in the reaction chamber and isolated from the reactor wall at the sides and at the ends so as to produce two separate chambers for the gaseous reactant stream and the gaseous product stream that are sealed with respect to one another and have two gas-permeable bounding walls arranged plane-parallel to one another. The device is designed in such a way that it has a height-to-thickness ratio greater than 1 and the catalyst bed has a height-to-thickness ratio greater than 1. | 2011-06-09 |
20110133127 | SYSTEM AND METHOD TO GASIFY AQUEOUS UREA INTO AMMONIA VAPORS USING SECONDARY FLUE GASES - The present invention is a combustion system employing a urea-to-ammonia vapor reactor system. The urea-to-ammonia reactor housing enclosed in a bypass flow duct that receives a secondary flue gas stream at a split point from a main flue gas stream containing nitrogen oxides (NOx) emanating from a boiler. The bypass flow duct allows the secondary flue gas stream to flow past the enclosed reactor housing where injected aqueous urea in atomized or non-atomized form, is gasified to ammonia vapor. The resulting gaseous mixtures of ammonia, its by-products and the secondary flue gas stream subsequently rejoin the main stream, before the main flue gases are treated through a Selective Catalytic Reduction (SCR) reactor apparatus. A residence time of the secondary stream within the bypass flow duct, which may be increased by a recirculation loop, enables effective conversion of urea to ammonia to be used in the SCR apparatus. | 2011-06-09 |
20110133128 | COATED PARTICLES - The invention relates to coated particles comprising a core material and a shell and wherein said core material is an organic compound and wherein said shell comprises a layered double hydroxide comprising a hydroxide or an organic anion as charge-balancing anion. | 2011-06-09 |
20110133129 | METHOD OF TUNING PROPERTIES OF THIN FILMS - A method of tuning thin film properties using pulsed laser deposition (PLD) by tuning laser parameters is provided. Various embodiments may be utilized to tune magnetic properties, conductivity or other physical properties. Some embodiments may improve performance of electrochemical devices, for example a thin film electrode may be fabricated resulting in improved reaction speed of a Li ion battery. By way of example, a material property of thin film is tuned by setting a pulse duration. In some embodiments the numbers of laser pulses and laser pulse energy are other laser parameters which may be utilized to tune the film properties. The materials that can be synthesized using various embodiments of the invention include, but are not limited to, metals and metal oxides. | 2011-06-09 |
20110133130 | ANISOTROPIC CONDUCTIVE FILM COMPOSITION - An anisotropic conductive film (ACF) composition includes a binder having a thermoplastic resin and a styrene-acrylonitrile (SAN) copolymer resin, a curing composition, and conductive particles. | 2011-06-09 |
20110133131 | Method of Producing Electrode Material Precursor and Electrode Material Using the Electrode Material Precursor - Provided is a method of producing an electrode material precursor having a core-shell structure in which the particle size is extremely small and the particle diameter is uniform, and a method of efficiently producing an electrode material using the obtained precursor. The method is for producing an electrode material precursor having a core-shell structure in which an active material core is coated with polyaniline, wherein an oxidizing agent is added to a solution containing aniline and an active raw material to generate fine active material particles, and aniline is polymerized at the surface of the fine particles. An electrode material having a core-shell structure in which an active material core is coated with carbon is produced by subjecting the electrode material precursor obtained in the foregoing production method to heat treatment in a reduction atmosphere at 300 to 900° C. | 2011-06-09 |
20110133132 | Chemically functionalized submicron graphitic fibrils, methods for producing same and compositions containing same - The present invention provides a chemically functionalized submicron graphitic fibril having a diameter or thickness less than 1 μm, wherein the fibril is free of continuous thermal carbon overcoat, free of continuous hollow core, and free of catalyst. The fibril is obtained by splitting a micron-scaled carbon fiber or graphite fiber along the fiber axis direction. These functionalized graphitic fibrils exhibit exceptionally high electrical conductivity, high thermal conductivity, high elastic modulus, high strength and good interfacial bonding with a matrix resin in a composite. The present invention also provides several products that contain submicron graphitic fibrils: (a) paper, thin-film, mat, and web products; (b) rubber or tire products; (c) energy conversion or storage devices, such as fuel cells, lithium-ion batteries, and supercapacitors; (d) adhesives, inks, coatings, paints, lubricants, and grease products; (e) heavy metal ion scavenger; (f) absorbent (e.g., to recover spill oil); (g) sensors; (h) friction and brake components; (i) radiation-shield components; (j) catalyst carrier; and (k) composite materials. | 2011-06-09 |
20110133133 | THERMOSETS CONTAINING CARBON NANOTUBES BY EXTRUSION - Methods of preparing conductive thermoset precursors containing carbon nanotubes is provided. Also provided is a method of preparing conductive thermosets containing carbon nanotubes. The carbon nanotubes may in individual form or in the form of aggregates having a macromorpology resembling the shape of a cotton candy, bird nest, combed yarn or open net. Preferred multiwalled carbon nanotubes have diameters no greater than 1 micron and preferred single walled carbon nanotubes have diameters less than 5 nm. Carbon nanotubes may be adequately dispersed in a thermoset precursor by using a extrusion process generally reserved for thermoplastics. The thermoset precursor may be a precursor for epoxy, phenolic, polyimide, urethane, polyester, vinyl ester or silicone. A preferred thermoset precursor is a bisphenol A derivative. | 2011-06-09 |
20110133134 | Crosslinkable and Crosslinked Compositions of Olefin Polymers and Graphene Sheets - Compositions comprising graphene sheets, at least one olefin polymer, and at least one crosslinking agent and crosslinked compositions comprising graphene sheets and at least one olefin polymer. A method of making a crosslinked composition comprising graphene sheets and at least one olefin polymer, coatings comprising the compositions, and a method of coating a surface with the compositions are disclosed. | 2011-06-09 |
20110133135 | CARBON NANOTUBE AGGREGATE - Provided is a composite material useful as a material for a thermal contact surface in a microprocessor which can express extremely high thermal diffusion property and extremely high conductivity, can express a sufficient adhesive strength in its surface, and is excellent in reworking property at the time of a bonding operation. The carbon nanotube aggregate of the present invention is a carbon nanotube aggregate where a plurality of carbon nanotubes each having a plurality of walls penetrate a resin layer in a thickness direction of the resin layer, in which both terminals of the carbon nanotube aggregate each have a shear adhesive strength for glass at 25° C. of 15 N/cm | 2011-06-09 |
20110133136 | CHEMICALLY STABLE SOLID LITHIUM ION CONDUCTOR - The present invention concerns chemically stable solid lithium ion conductors, processes for their production and their use in batteries, accumulators, supercaps and electrochromic devices. | 2011-06-09 |
20110133137 | METAL PARTICLES-DISPERSED COMPOSITION AND FLIP CHIP MOUNTING PROCESS AND BUMP-FORMING PROCESS USING THE SAME - A flip chip mounting process wherein a semiconductor chip and a circuit substrate are electrically interconnected. The process includes the steps of preparing a semiconductor chip on which a first plurality of electrodes are formed and a circuit substrate on which a second plurality of electrodes are formed; supplying a composition onto a surface of the circuit substrate, such surface being provided with second plurality of electrodes; bringing the semiconductor chip into contact with a surface of said composition such that the first plurality of electrodes are opposed to the second plurality of electrodes; and heating the circuit substrate, and thereby electrical connections including a metal component constituting the metal particles dispersed in the composition are formed between the first plurality of electrodes and the second plurality of electrodes. Also, a thermoset resin layer is formed between the semiconductor chip and the circuit substrate. | 2011-06-09 |
20110133138 | METHOD FOR PRODUCING COATING SOLUTION FOR USE IN SOLAR COLLECTOR MODULES AND COATING COMPOSITION PRODUCED BY THE SAME - There is provided a method for producing a coating solution used on glass for solar collector modules to enhance optical transmittance, comprising: preparing a sol of particles having a diameter of about ten nanometers to about several hundred nanometers by adding a coagulation-inducing agent to a coating solution to induce coagulation of the coating solution by the sol-gel reaction, wherein the coagulation-inducing agent reacts with aluminum alkoxide. | 2011-06-09 |
20110133139 | Puller Tool - A puller tool and method for pulling a component from another component are provided. The puller tool can include a cross bar, a pair of puller legs that are movable along the length of the cross bar and a forcing screw. The puller legs can be quickly positioned anywhere along the length of the cross bar through a quick release mechanism. The cross bar can include notches on its outer surface to ensure that the puller legs are equidistant from each other during use. | 2011-06-09 |
20110133140 | Manhole cover extractor - A manhole cover extractor that pulls and lifts weighty horizontal items such as manhole covers and handhold enclosure covers that are lifted perpendicular from one side and pulled from the original position, removed and on same plane able to lift and move cover back to the original setting or simply move cover as to not create a tripping hazard; the tool consists of a T-bar which gives the necessary fulcrum for effortless removal and management of cumbersome manhole covers, the T-bar is comprised with handles to control the load. A polypropylene strap which is doubled back with reinforced cross stitching and J-hook which engages the object(s) listed and the aforementioned polypropylene strap is docked to the T-bar handle. Pneumatic all-terrain tires that are attached to an axle that is secured to the T-bar handle through the A-frame of the dolly. | 2011-06-09 |
20110133141 | Pulling Eye With Integrated Lug For Electrically Coupling Conductor To Terminating Equipment - Pulling eyes are provided with an integrated lug for electrically coupling conductors or cables to terminating equipment. The pulling eyes may include body portions that define interior cavities that are sized to snugly engage a bare metal portion of the conductors or cables. The body portions are sized to be deformably crimped onto the bare metal portions of the conductors or cables. The pulling eyes may also include head portions joined to the body portions, with the head portions are assembled to pulling ropes or cables for installing the conductors or cables. The pulling eyes may further include integrated lugs electrically attached or coupled to the body portions and configured to electrically couple the conductor to terminating equipment. | 2011-06-09 |
20110133142 | APPARATUS AND METHOD FOR DISPENSING FISH TAPE - A device for dispensing fish tape includes a pair of outside walls and outer and inner annular walls depending generally perpendicularly from the edges of the outside walls. Intermediate pinch ring walls depend generally perpendicularly from the outside walls and are positioned between the inner and outer walls. A plurality of spaced apart protuberances are provided on the intermediate walls and engage undulations on a hoop of a winding belt mounted within the device. A fish tape is mounted within the device and engages with the winding hoop. Each outside wall has a flat section extending from the outer edge thereof toward the inner edge thereof, and a raised section extending from the flat section to the inner edge. | 2011-06-09 |
20110133143 | Lifting Bag of Web-Like Rubber Material Hot-Vulcanized In A Press and Method For Its Production - The lifting bag comprises an inside inside bladder ( | 2011-06-09 |
20110133144 | PORTABLE CATTLE GUARD AND METHOD THEREFOR - A cattle guard has a grate section, wherein the grate section is arced shaped and is positioned on a ground. An end member is hingedly coupled to the grate section. The end member allows the cattle guard to adjust to conform to different fence openings. | 2011-06-09 |
20110133145 | FENCE COLUMNS, FENCES INCLUDING SUCH FENCE COLUMNS AND RELATED METHODS - Fence columns, fences including such columns, and related methods of fence assembly and disassembly are disclosed. A column for a column and panel fence may include an elongated member, column faces, and a cross-piece. The elongated member may have a first end and a second end, and the first end may be secured to a footing. A first column face and an opposing second column face may form at least one channel therebetween sized and configured to receive an end portion of at least one fence panel. The cross-piece may have a first end coupled to the first column face, a second end coupled to the second column face and an intermediate portion coupled to the second end of the elongated member. Additionally, the cross-piece and the elongated member may be held in tension by the footing, the first column face and the second column face. | 2011-06-09 |
20110133146 | BALUSTRADE - A balustrade ( | 2011-06-09 |
20110133147 | Continuous plane of thin-film materials for a two-terminal cross-point memory - A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper. | 2011-06-09 |
20110133148 | RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus reducing errors in program/erase operations. | 2011-06-09 |
20110133149 | RESISTANCE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a resistance change memory includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit which is provided between the first interconnect line and the second interconnect line and which includes a non-ohmic element and a memory element, the non-ohmic element including a conductive layer provided on at least one of first and second ends of the cell unit and a silicon portion provided between the first and second ends, the memory element being connected to the non-ohmic element via the conductive layer and storing data in accordance with a reversible change in a resistance state, wherein the non-ohmic element includes a first silicon germanium region in the silicon portion. | 2011-06-09 |
20110133150 | Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same - Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element. | 2011-06-09 |
20110133151 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - A method of forming a reversible resistance-switching metal-insulator-metal structure is provided, the method including forming a first non-metallic conducting layer, forming a non-conducting layer above the first non-metallic conducting layer, forming a second non-metallic conducting layer above the non-conducting layer, etching the first non-metallic conducting layer, non-conducting layer and second non-metallic conducting layer to form a pillar, and disposing a carbon material layer about a sidewall of the pillar. Other aspects are also provided. | 2011-06-09 |
20110133152 | RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A resistive memory device is provided. The resistive memory device includes a bottom electrode, a resistance-variable layer, and a top electrode. The resistance-variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance-variable layer. The resistance-variable layer includes a conductive polymer layer that reacts with the top electrode to form an oxide layer. | 2011-06-09 |
20110133153 | POROUS NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME - Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure. | 2011-06-09 |
20110133154 | LIGHT-EMITTING DEVICE - A light emitting device includes: a laminated body including a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer, the laminated body being made of In | 2011-06-09 |
20110133155 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first conductive type semiconductor layer; an active layer including a barrier layer and a well layer alternately disposed on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer. At least one well layer includes an indium cluster having a density of 1E11/cm | 2011-06-09 |
20110133156 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising a conductive type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer. | 2011-06-09 |
20110133157 | SURFACE PLASMON DISPERSION ENGINEERING VIA DOUBLE-METALLIC AU/AG LAYERS FOR NITRIDE LIGHT-EMITTING DIODES - A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate. | 2011-06-09 |
20110133158 | METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS - A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas. | 2011-06-09 |
20110133159 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER - A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped semiconductor layer, wherein part of the first doped semiconductor layer is passivated, and wherein the passivated portion of the first doped semiconductor layer substantially insulates the first electrode from the edges of the first doped semiconductor layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped semiconductor layer and a passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. | 2011-06-09 |
20110133160 | NANOWIRE STRUCTURED PHOTODIODE WITH A SURROUNDING EPITAXIALLY GROWN P OR N LAYER - An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer. | 2011-06-09 |
20110133161 | Omega Shaped Nanowire Tunnel Field Effect Transistors - A method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region, the nanowire including a core portion and a dielectric layer, forming a gate structure on the dielectric layer of the nanowire, forming a first protective spacer on portions of the nanowire, implanting ions in a first portion of the exposed nanowire and the first pad region, implanting in the dielectric layer of a second portion of the exposed nanowire and the second pad region, removing the dielectric layer from the second pad region and the second portion, removing the core portion of the second portion of the exposed nanowire to form a cavity, and epitaxially growing a doped semiconductor material in the cavity to connect the exposed cross sections of the nanowire to the second pad region. | 2011-06-09 |
20110133162 | Gate-All-Around Nanowire Field Effect Transistors - A method for forming a nanowire field effect transistor (FET) device, the method includes forming a suspended nanowire over a semiconductor substrate, forming a gate structure around a portion of the nanowire, forming a protective spacer adjacent to sidewalls of the gate and around portions of nanowire extending from the gate, removing exposed portions of the nanowire left unprotected by the spacer structure, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a source region and a drain region. | 2011-06-09 |
20110133163 | NANOWIRE FET HAVING INDUCED RADIAL STRAIN - An intermediate process device is provided and includes a nanowire connecting first and second silicon-on-insulator (SOI) pads, a gate including a gate conductor surrounding the nanowire and poly-Si surrounding the gate conductor and silicide forming metal disposed to react with the poly-Si to form a fully silicided (FUSI) material to induce radial strain in the nanowire. | 2011-06-09 |
20110133164 | Omega Shaped Nanowire Field Effect Transistors - A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire on a semiconductor substrate, forming a first gate structure on a first portion of the nanowire, forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire extending from the first gate structure, removing exposed portions of the nanowire left unprotected by the first spacer, and epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a first source region and a first drain region. | 2011-06-09 |
20110133165 | SELF-ALIGNED CONTACTS FOR NANOWIRE FIELD EFFECT TRANSISTORS - A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire over a semiconductor substrate, forming a gate structure around a portion of the nanowire, forming a capping layer on the gate structure; forming a first spacer adjacent to sidewalls of the gate and around portions of nanowire extending from the gate, forming a hardmask layer on the capping layer and the first spacer, removing exposed portions of the nanowire, epitaxially growing a doped semiconductor material on exposed cross sections of the nanowire to form a source region and a drain region, forming a silicide material in the epitaxially grown doped semiconductor material, and forming a conductive material on the source and drain regions. | 2011-06-09 |
20110133166 | NANOWIRE FET HAVING INDUCED RADIAL STRAIN - A device is provided and includes a nanowire connecting first and second silicon-on-insulator (SOI) pads and a gate including a gate conductor surrounding the nanowire and a fully silicided material surrounding the gate conductor to radially strain the nanowire. | 2011-06-09 |
20110133167 | PLANAR AND NANOWIRE FIELD EFFECT TRANSISTORS - A method for forming an integrated circuit, the method includes forming a first nanowire suspended above an insulator substrate, the first nanowire attached to a first silicon on insulator (SOI) pad region and a second SOI pad region that are disposed on the insulator substrate, a second nanowire disposed on the insulator substrate attached to a third SOI pad region and a fourth SOI pad region that are disposed on the insulator substrate, and a SOI slab region that is disposed on the insulator substrate, and forming a first gate surrounding a portion of the first nanowire, a second gate on a portion of the second nanowire, and a third gate on a portion of the SOI slab region. | 2011-06-09 |
20110133168 | QUANTUM-WELL-BASED SEMICONDUCTOR DEVICES - Quantum-well-based semiconductor devices and methods of forming quantum-well-based semiconductor devices are described. A method includes providing a hetero-structure disposed above a substrate and including a quantum-well channel region. The method also includes forming a source and drain material region above the quantum-well channel region. The method also includes forming a trench in the source and drain material region to provide a source region separated from a drain region. The method also includes forming a gate dielectric layer in the trench, between the source and drain regions; and forming a gate electrode in the trench, above the gate dielectric layer. | 2011-06-09 |
20110133169 | Gate-All-Around Nanowire Tunnel Field Effect Transistors - A method for forming a nanowire tunnel field effect transistor (FET) device includes forming a nanowire suspended by first and second pad regions over a semiconductor substrate, the nanowire including a core portion and a dielectric layer, forming a gate structure around a portion of the dielectric layer, forming a first spacer around portions of the nanowire extending from the gate structure, implanting ions in a first portion of the nanowire, implanting ions in the dielectric layer of a second portion of the nanowire, removing the dielectric layer from the second portion of the nanowire, removing the core portion of the second portion of the exposed nanowire to form a cavity, and epitaxially growing a doped semiconductor material in the cavity from exposed cross sections of the nanowire and the second pad region to connect the exposed cross sections of the nanowire to the second pad region. | 2011-06-09 |
20110133170 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE - There is provided an organic light emitting display device including a first substrate; an organic light emitting unit formed on the first substrate; a second substrate disposed on the organic light emitting unit; and an adhesive unit for adhering the first substrate and the second substrate to each other, wherein the adhesive unit includes a sealant, and particles that are arranged in the sealant so as to block penetration of external impurities. There is further provided a method of manufacturing the organic light emitting display device. | 2011-06-09 |
20110133171 | ARYLAMINE COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE - This invention relates to an arylamine compound having a molecular weight of 1,500 to 6,000 represented by formula (1), and to an organic electroluminescence device having a pair of electrodes and at least one organic layer sandwiched therebetween, wherein the arylamine compound of formula (1) is used as a constituting material of the at least one organic layer: | 2011-06-09 |
20110133172 | Light-Emitting Element, light-Emitting Device, and Electronic Device - The light-emitting element of the present invention includes a light-emitting layer and a layer for controlling movement of carriers between a pair of electrodes. The layer for controlling movement of carriers includes a first organic compound having a carrier transporting property and a second organic compound for reducing the carrier transporting property of the first organic compound, and the second organic compound is dispersed in the first organic compound. The layer for controlling movement of carriers is provided in such a manner, whereby change in carrier balance with time can be suppressed. Therefore, a light-emitting element having a long lifetime can be obtained. | 2011-06-09 |
20110133173 | CHARGE TRANSPORT COMPOSITIONS AND ELECTRONIC DEVICES MADE WITH SUCH COMPOSITIONS - The present invention relates to charge transport compositions. The invention further relates to electronic devices in which there is at least one active layer comprising such charge transport compositions. | 2011-06-09 |
20110133174 | N-TYPE CONJUGATED COMPOUNDS CONTAINING DIBORYLENE UNITS, METHODS OF MAKING, AND A DEVICE COMPRISING THE COMPOUND - N-type conjugated compounds are disclosed which include at least one conjugated electron-acceptor unit The conjugated electron-acceptor unit includes a diborylene unit. The compounds find application in an electron acceptor layer of an electronic device. | 2011-06-09 |
20110133175 | HIGH-PERFORMANCE HETEROSTRUCTURE LIGHT EMITTING DEVICES AND METHODS - A layered heterostructure light emitting device comprises at least a substrate, an n-type gallium nitride-based semi-conductor cladding layer region, a p-type gallium nitride-based semiconductor cladding layer region, a p-type zinc oxide-based hole injection layer region, and an ohmic contact layer region. Alternatively, the device may also comprise a capping layer region, or may also comprise a reflective layer region and a protective capping layer region. The device may also comprise one or more buried insertion layers adjacent to the ohmic contact layer region. The ohmic contact layer region may be comprised of materials such as indium tin oxide, gallium tin oxide, or indium tin oxide material. An n-electrode pad is formed that is in electrical contact with the n-type gallium nitride based cladding layer region. A p-type pad is formed that is in electrical contact with the p-type region. | 2011-06-09 |
20110133176 | Transistor and electronic apparatus including same - Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material. | 2011-06-09 |
20110133177 | Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same - The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer. | 2011-06-09 |
20110133178 | SEMICONDUCTOR DEVICE - One object is to provide a p-channel transistor including an oxide semiconductor. Another object is to provide a complementary metal oxide semiconductor (CMOS) structure of an n-channel transistor including an oxide semiconductor and a p-channel transistor including an oxide semiconductor. A p-channel transistor including an oxide semiconductor includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer, and a source and drain electrode layers in contact with the oxide semiconductor layer. When the electron affinity and the band gap of an oxide semiconductor used for the oxide semiconductor layer in the semiconductor device, respectively, are χ (eV) and E | 2011-06-09 |
20110133179 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device, which includes the steps of forming a gate electrode layer over a substrate having an insulating surface, forming a gate insulating layer over the gate electrode layer, forming an oxide semiconductor layer over the gate insulating layer, forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer, forming an insulating layer including oxygen over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and after formation of an insulating layer including hydrogen over the insulating layer including oxygen, performing heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer. | 2011-06-09 |
20110133180 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - One embodiment of the present invention is to achieve high mobility in a device using an oxide semiconductor and provide a highly reliable display device. An oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction substantially perpendicular to a surface is formed and an oxide insulating layer is formed over and in contact with the oxide semiconductor layer. Oxygen is supplied to the oxide semiconductor layer by third heat treatment. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer and fourth heat treatment is performed, so that hydrogen is supplied at least to an interface between the oxide semiconductor layer and the oxide insulating layer. | 2011-06-09 |
20110133181 | DISPLAY DEVICE - One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over the first gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; a second gate insulating film over the source electrode, the drain electrode and the oxide semiconductor film; a second gate electrode over the second gate insulating film; an organic resin film having flatness over the second gate insulating film; a pixel electrode over the organic resin film having flatness, wherein the concentration of hydrogen atoms contained in the oxide semiconductor film and measured by secondary ion mass spectrometry is less than 1×10 | 2011-06-09 |
20110133182 | SEMICONDUCTOR DEVICE - An object is to provide a UV sensor with high accuracy, which can be manufactured at low cost and formed over a flexible substrate. A semiconductor device includes a transistor having an oxide semiconductor film, and a voltage source electrically connected to a gate of the transistor, in which a threshold voltage of the transistor is changed by irradiating the oxide semiconductor film with UV rays; a change in the threshold voltage of the transistor is dependent on a wavelength of the UV rays with which the oxide semiconductor film is irradiated, and the voltage source adjusts a voltage output to the gate of the transistor. | 2011-06-09 |
20110133183 | DISPLAY DEVICE - A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel. | 2011-06-09 |
20110133184 | SEMICONDUCTOR DEVICE - A semiconductor device includes an insulating film formed on a substrate; an interconnect layer including a plurality of interconnects formed in the insulating film; and a pad formed on the insulating film. In a region containing at least a part of a section below the pad, a narrow spacing region is formed, where a spacing between the adjacent interconnects is shorter than that in a section outside the region containing at least a part of the section below the pad. | 2011-06-09 |
20110133185 | SEMICONDUCTOR DEVICE FORMATION SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A dummy columnar electrode having the same outer size and cross section as a columnar electrode formed in a semiconductor device formation region is formed in the peripheral part of a semiconductor device test region in the same process as the columnar electrode. The semiconductor device test regions are provided at several places on the peripheral edge of an effective semiconductor wafer region. Each of the semiconductor device test regions is formed to partly protrude out of the effective semiconductor wafer region. Thus, the number of the semiconductor device formation regions to be products can be prevented from decreasing. | 2011-06-09 |
20110133186 | PROCESS FOR MANUFACTURING A SEMICONDUCTOR WAFER HAVING SOI-INSULATED WELLS AND SEMICONDUCTOR WAFER THEREBY MANUFACTURED - A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region. | 2011-06-09 |
20110133187 | PHOTO DETECTOR AND METHOD OF MANUFACTURING THE SAME - Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants. | 2011-06-09 |
20110133188 | Process for Simultaneous Deposition of Crystalline and Amorphous Layers with Doping - One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics. | 2011-06-09 |
20110133189 | NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING - An NMOS transistor is formed with improved manufacturability. An embodiment includes forming N-type doped embedded silicon germanium containing carbon (eSiGe:C) in source/drain regions of a substrate, and amorphizing the eSiGe:C. The use of eSiGe:C provides a reduction in extension silicon and dopant loss, improved morphology, increased wafer throughput, improved short channel control, and reduced silicide to source/drain contact resistance. | 2011-06-09 |
20110133190 | THIN-FILM TRANSISTOR AND INTERMEDIATE OF THIN-FILM TRANSISTOR - This thin-film transistor according to an aspect of the present invention includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer containing an oxygen-calcium concentrated layer that is formed so as to come into contact with a barrier film and a Cu layer that is formed on the copper alloy underlayer containing an oxygen-calcium concentrated layer. The copper alloy underlayer containing an oxygen-calcium concentrated layer includes a concentrated layer, and the concentrated layer includes 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance. | 2011-06-09 |
20110133191 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer. | 2011-06-09 |
20110133192 | METHOD OF FORMING CONDUCTIVE PATTERN AND ORGANIC THIN FILM TRANSISTOR - In the present invention, provided is a method of forming a conductive pattern exhibiting excellent adhesion of the conductive pattern to a substrate and high fine line reproduction via a simple process, and an organic thin film transistor exhibiting excellent element properties. Disclosed is a method of forming a conductive pattern, possessing a step of treating a substrate surface employing a compound represented by the following Formula (1), a step of decomposing the compound represented by Formula (1) via a photocatalytic action, and a plating step: Formula (1) (R) | 2011-06-09 |
20110133193 | THIN FILM TRANSISTOR SUBSTRATE AND THE METHOD THEREOF - A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape. | 2011-06-09 |
20110133194 | PIXEL STRUCTURE - A pixel structure includes a scan line, a data line, a gate electrode electrically connected to the scan line, a semiconductor layer disposed on the gate electrode, a drain electrode, an extending electrode, and a pixel electrode. The scan line and the data line cross each other, and are insulated. The drain electrode includes a contact part disposed outside the gate electrode, an electrode part disposed on the semiconductor pattern and a connecting part extending from the contact part along a direction to connect the electrode part, and partially overlapping the gate electrode. The pixel electrode is connected to the contact part. The extending electrode is connected to the scan line. A first end of the extending electrode points to the semiconductor layer along the direction, and overlaps the drain electrode. A first width of the connecting part is equal to the second width of the extending electrode. | 2011-06-09 |