| 21st week of 2011 patent applcation highlights part 15 |
| Patent application number | Title | Published |
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| 20110121202 | Optical Fiber Imaging System And Method For Generating Fluorescence Imaging - A nonlinear fluorescence imaging system and method for generating fluorescence imaging includes a pulsed laser source for generating laser pulses at a first wavelength and an optical pulse stretcher including one or more optical pulse stretcher fibers having a first dispersion parameter at the first wavelength. The system also includes a probe for interfacing with a sample to deliver the laser pulses and extract fluorescence signals excited in the sample. One or more optical delivery fibers are included for delivering the laser pulses and collecting nonlinear fluorescence signals. The optical delivery fiber has a second dispersion parameter at the first wavelength which is opposite a polarity of the first dispersion parameter. A detector detects images based on the collected fluorescence signals. | 2011-05-26 |
| 20110121203 | AUTHENTICATION APPARATUS FOR MOVING VALUE DOCUMENTS - An authentication apparatus used to authenticate a moving value document with uniform or non-uniform distribution of a pre-selected covert composition that includes an active ion that emits optical radiation at a pre-selected wavelength when excited by exciting incident light. The optical radiation is imaged onto at least one photodetector having first and second detector elements. The imaged intensities are captured at pre-determined times relating to the velocity of the value document. The ratio between the second detector element and the first detector element measured at the same image location or different image locations represents the characteristic decay time intensity data of the pre-selected wavelength emission. The authenticity of the value document is rejected when the pre-selected wavelength emission is not received by the at least one photodetector or when the output electronic signal ratio does not meet expected value. | 2011-05-26 |
| 20110121204 | TOTAL REFLECTION FLUORESCENCE OBSERVATION DEVICE - A technique and device for fluorescence observation with good operability, high sensitivity, acid high reliability. The device is used for fluorescence observation using evanescent light. The angle of incidence of the excitation light is adjusted so that the excitation light is always totally reflected from the surface of a substrate irrespective of the angle of the surface of the substrate. The method includes a step of shining the excitation light on the observation substrate while continuously varying the angle of the excitation light with respect to the observation substrate, a step of sensing the shone excitation light by means of optical sensors, and a step of setting the angle of total reflection according to the result of the sensing by the optical sensors. The direction in which the shone excitation light travels varies with the angle of incidence. That is, the excitation light travels as the transmitted light, the reflected light, or the surface propagating light. These lights are sensed by the corresponding optical sensors, and how the angle of incidence of the excitation light is with respect to the critical angle is determined. The angle of incidence of the excitation light is varied depending on the result of the determination, thereby realizing an optimum total reflection angle. | 2011-05-26 |
| 20110121205 | LASER IRRADIATION APPARATUS, IRRADIATION METHOD USING THE SAME, AND METHOD OF CRYSTALLIZING AMORPHOUS SILICON FILM USING THE SAME - Provided are a laser irradiation apparatus, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same. Particularly, a laser irradiation apparatus which can reduce a deviation of an intensity of a laser beam, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same, which can improve uniformity in crystallization into a polycrystalline silicon thin film, are provided. | 2011-05-26 |
| 20110121206 | FEMTOSECOND LASER-INDUCED FORMATION OF SUBMICROMETER SPIKES ON A SEMICONDUCTOR SUBSTRATE - The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface. | 2011-05-26 |
| 20110121207 | Ion Beam Processing Apparatus - An ion-cut machine and method for slicing silicon ingots into thin wafers for solar cell manufacturing is set forth, amongst other embodiments and applications. One embodiment comprises two carousels: first carousel ( | 2011-05-26 |
| 20110121208 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND ELECTRICAL CHARGING EFFECT CORRECTION METHOD THEREOF - A charged particle beam drawing apparatus calculates a pattern area density distribution by using a central processing unit, calculates a dose distribution by using the central processing unit, calculates an irradiation amount distribution by using the central processing unit, performs a convolution calculation of the irradiation amount distribution and a fogging charged particle distribution by using a high speed processing unit, a processing speed of the high speed processing unit being higher than a processing speed of the central processing unit, calculates an irradiation time by using the central processing unit, calculates an elapsed time by using the central processing unit, calculates an electrical charging amount distribution by using the central processing unit, and performs a convolution calculation of the electrical charging amount distribution and a position deviation response function by using the high speed processing unit. | 2011-05-26 |
| 20110121209 | Terahertz radiation source and method for generating terahertz radiation - A terahertz radiation source is described which includes a pulsed femtosecond fiber laser, a pulse shaper, an optical amplifier and a nonlinear crystal, wherein the laser, pulse shaper, optical amplifier and nonlinear crystal are configured and/or situated in such a way that a laser pulse I, II, III, IV produced by the laser first passes through the pulse shaper, then the optical amplifier, and then the nonlinear crystal. Also described is a related imaging and/or spectroscopy system, a method for generating terahertz radiation, a method for detecting and/or examining life forms, objects, and materials using a system of this type, and a use of a source and a system of this type. | 2011-05-26 |
| 20110121210 | Digital output circuit - A digital output circuit includes a photocoupler, having one light emitting diode and one phototransistor, for transmitting a digital voltage output signal to the load; an output transistor, having a control terminal, a first terminal and second terminals, for transmitting an output signal from the phototransistor to the load; and a voltage smoothing unit. Further, a first terminal of the phototransistor is connected to a power supply terminal via a first resistor and a second terminal of the phototransistor is connected to the control terminal of the output transistor. A second resistor is connected between the control terminal and the first terminal of the output transistor. The first terminal of the output transistor is connected to the common terminal and the second terminal of the output transistor is connected to the output terminal. The voltage smoothing unit is connected between the first terminal of the phototransistor and the common terminal. | 2011-05-26 |
| 20110121211 | Galvanic Isolator Having Improved High Voltage Common Mode Transient Immunity - A galvanic isolator having a transmitter die, a receiver die, and a lead frame is disclosed. The transmitter die includes an LED having first and second contacts for powering the LED, and the receiver die includes a photodetector. The lead frame includes first and second transmitter leads, and first and second receiver leads. The transmitter die is bonded to the first lead, the first contact being connected electrically to the first transmitter lead and the second contact being connected to the second transmitter lead. The receiver die is connected to the first and second receiver leads. The LED and the photodetector are positioned such that light generated by the LED is received by the photodetector. The first and second transmitter leads are capacitively coupled to the first receiver lead. The capacitive couplings are characterized by first and second capacitance values that are substantially the same. | 2011-05-26 |
| 20110121212 | CANDLE FLAME ACTIVATED DYNAMIC CANDLE HOLDER - A candle flame activated dynamic candle holder is revealed. The dynamic candle holder includes a candle holder, at least one optical sensor and a dynamic display device. A receptacle for receiving a candle is arranged on a top of the candle holder and the optical sensor is disposed outside the receptacle so as to receive candle light for being activated. The dynamic display device is composed of a circuit board, a motor and an ornament. When the candle is lighted, the optical sensor is turned on by light from the candle and then is electrically connected with the circuit board so as to drive the motor to operate. Thus the ornament is moved and displayed dynamically. When the candle is out, the motor stops working. | 2011-05-26 |
| 20110121213 | ELECTRONIC FLUSH VALVE WITH OPTIONAL MANUAL OVERRIDE - A flush valve assembly including a discharge receiver with a plug opening therein, a sleeve, a main valve assembly positioned within the sleeve, and a main diaphragm sealingly connected between the main valve assembly and the sleeve. The main diaphragm and the main valve assembly define a control chamber on an upper side thereof and an inlet region on a lower side thereof. The assembly also includes a discharge plug with a flange portion configured to be received in the plug opening in the discharge receiver. When the flush valve assembly is in a non-pressurized condition, the flange portion of the discharge plug is not seated within the plug opening of the discharge receiver, and when the flush valve assembly is in a pressurized condition, the flange portion of the discharge plug is seated within the plug opening of the discharge receiver. The flushing operation may be electronic and/or manual. | 2011-05-26 |
| 20110121214 | ELECTROMAGNETIC ACTUATING UNIT - An electromagnetic actuating unit for a hydraulic valve with a housing and a closure element. The housing at least partially delimits the electromagnetic actuating unit in relation to the surroundings. The closure element is arranged within an introductory opening of the housing. A sealing-means receptacle is formed on a boundary surface between the housing and the closure element. Furthermore, at least one first channel leads into the sealing-means receptacle and is open towards the surroundings of the actuating unit. A sealing element, which is arranged in the sealing-means receptacle, is placed into the sealing-means receptacle via the first channel. | 2011-05-26 |
| 20110121215 | Solenoid Valve Controlled By Wireless Communication - A solenoid valve controlled by wireless communication, in which the operation of the valve is controlled by wireless communication, thereby reducing costs and labors necessary for installation and maintenance. The solenoid valve includes a valve body having an inlet port, through which fluid is introduced, and an outlet port, through which fluid is discharged; a plunger movably mounted inside the valve body to open or close one or both of the inlet and outlet ports; a solenoid, which drives the plunger to a position, in which the plunger opens or closes one or both of the inlet and outlet ports, when electric power is supplied; and a communication module provided on the valve body. The communication module receives a wireless control signal transmitted from outside and controls the electric power supplied to the solenoid valve depending on the wireless control signal. | 2011-05-26 |
| 20110121216 | METHOD AND ARRANGEMENT FOR WINDING A WINDING WIRE ONTO A WINDING BODY AND ASSOCIATED MAGNET ASSEMBLY FOR A SOLENOID VALVE - The invention relates to a method and an arrangement for winding a winding wire onto a winding body, and to an associated magnet assembly. The start of the winding wire is threaded into a first wire-receiving slot of a first electrical connection dome. By a winding operation a predefinable number of turns are then wound onto the winding body, and one end of the winding wire is threaded into a second wire-receiving slot of a second electrical connection dome and cut off. According to the invention, the start of the winding wire which has been threaded into the first wire-receiving slot is placed on a first wire support which is arranged downstream of the first wire-receiving slot. The winding wire is shaped and held before the winding operation such that the diameter of the winding wire is increased at one region positioned on the first wire support, in the direction of the width of the first wire-receiving slot, and the start of the winding wire is prevented from slipping back into the first wire-receiving slot. | 2011-05-26 |
| 20110121217 | SOLENOID VALVE - There is provided a solenoid valve that realizes space-saving by reducing the size of a dedicated driving power source. There is provided a solenoid valve capable of instantaneously opening and closing that includes an electric double layer capacitor having a low direct current internal resistance and a low equivalent series resistance as a motive power supply. The electric double layer capacitor has single-cell electrical properties including a capacitance of 1 to 5 F, a rated voltage of 21 to 2.7 V, a direct current internal resistance of 0.01 to 0.1 Ω, and an equivalent series resistance at 1 KHz of 0.03 to 0.09 Ω, and includes a polarizable electrode made of glassy carbon having a specific surface area of 1 to 500 m | 2011-05-26 |
| 20110121218 | ELECTROMAGNETIC ACTUATING UNIT OF A HYDRAULIC DIRECTIONAL VALVE - An electromagnetic actuating unit of a hydraulic directional valve, which has an armature and a first and a second magnet yoke. The first and the second magnet yokes at least partially bind an armature space, the armature is arranged in the armature space so as to be axially displaceable, and the first and the second magnet yokes face each other in the axial direction of the armature. | 2011-05-26 |
| 20110121219 | COMPOSITE VALVE - A valve utilizes a composite two-piece housing to provide a low cost, high strength, light weight alternative to conventional metal and plastic valves adaptable for corrosive and non-corrosive environments. The valve includes a valve body defined by a first body half coupled to a second body half. A valve disk assembly is disposed between the first and second body halves. The disk assembly includes a valve disk, a valve stem and a valve seal. The disk stem is positioned within the valve disk along a central axis of the disk such that when the disk is rotated about the valve stem, the valve is opened or closed. The valve seal includes a primary portion lining an interior surface formed by the first and second body halves to engage an outer surface of the disk. The seal also includes a secondary portion disposed within and between the first and second body halves. The primary and secondary sealing portions configured to retain position within the housing and in sealing engagement with the disk. | 2011-05-26 |
| 20110121220 | Non-Interchangeable Connecting Valves for Fuel Cartridges - A non-interchangeable two-component connecting valve capable of connecting a fuel supply to a fuel cell or other device is disclosed. One component of the connecting valve comprises at least one center post and one internal elastomeric seal, which opens when moved or compressed by a correctly sized and dimensioned mating tube from the other component. In one embodiment, only one valve component has one or more internal seals. In alternate embodiments, both valve components have one or more internal seals, which can open simultaneously or sequentially. | 2011-05-26 |
| 20110121221 | INLET OPENING DEVICE FOR INFLATING A WARMING BLANKET - A warming blanket is provided that includes a first sheet and a second sheet sealed at least along a common edge. An air inlet is provided on the warming blanket where the first sheet and the second sheet are not sealed. An inlet opening device is attached to the inlet opening. The inlet opening device separates the first sheet from the second sheet at the inlet opening in the absence of an opposing force. Methods of forming and using the warming blanket are also provided. | 2011-05-26 |
| 20110121222 | SYSTEMS AND METHODS FOR PROVIDING A DRY FROTH MATERIAL - A thin-film evaporation system and method for processing a wet froth material. The system includes a horizontally positioned evaporation unit having an internal conveyor screw for systematically controlling the flow of a wet froth material through the evaporator. The system further includes a separation tank configured to remove unwanted waste materials from the final, dry froth product. | 2011-05-26 |
| 20110121223 | MAGNETORHEOLOGICAL FLUIDS AND METHODS OF MAKING AND USING THE SAME - One embodiment includes a magnetorheological fluid having an on-state yield stress when a magnetic field is applied thereto and comprising a carrier fluid and magnetizable particles suspended in the carrier fluid, and wherein the suspension of the magnetizable particles in the carrier fluid remains essentially homogenous indefinitely in the absence of the magnetic field, and wherein the on-state yield stress of the magnetorheological fluid is greater than or equal to that of poly(alpha)olefin fluid containing the same concentration of magnetizable particles, and wherein the off-state viscosity of the magnetorheological fluid is between about 0.4 and about 12 Pascal-seconds at 40° C. | 2011-05-26 |
| 20110121224 | POLISHING COMPOSITION - A polishing composition that allows polishing speed to be increased and surface roughness to be reduced is provided. The polishing composition according to the present invention includes a compound including at least an oxyethylene group or an oxypropylene group in a block polyether represented by the following general formula (1), a basic compound, and abrasives: >N—R—N< (1) where R represents an alkylene group expressed as C | 2011-05-26 |
| 20110121225 | HYBRID TWO- AND THREE-COMPONENT HOST-GUEST NANOCOMPOSITES AND METHOD FOR MANUFACTURING THE SAME - A hybrid organic-inorganic nanocomposite useful as a cathode in high discharge capacity lithium batteries is provided. The nanocomposite includes macromolecules that are located inside interlayer galleries of V | 2011-05-26 |
| 20110121226 | Method for manufacturing lithium titanate for lithium secondary battery active material - The present invention provides a method for manufacturing lithium titanate for a lithium secondary battery active material that can provide excellent rapid charge and discharge characteristics to a lithium secondary battery when used as a negative electrode active material, by which method lithium titanate that is a single phase by X-rays can be obtained. The method for manufacturing lithium titanate for a lithium secondary battery active material according to the present invention comprises a first step of preparing a mixture comprising a lithium compound, and anatase type titanium dioxide obtained by a sulfuric acid method and having a specific surface area of 10.0 to 50.0 m | 2011-05-26 |
| 20110121227 | CARBON NANOTUBE FIBERS/FILAMENTS FORMULATED FROM METAL NANOPARTICLE CATALYST AND CARBON SOURCE - Disclosed is a method of: providing a mixture of a polymer or a resin and a transition metal compound, producing a fiber from the mixture, and heating the fiber under conditions effective to form a carbon nanotube-containing carbonaceous fiber. The polymer or resin is an aromatic polymer or a precursor thereof and the mixture is a neat mixture or is combined with a solvent. Also disclosed are a carbonaceous fiber or carbonaceous nanofiber sheet having at least 15 wt. % carbon nanotubes, a fiber or nanofiber sheet having the a polymer or a resin and the transition metal compound, and a fiber or nanofiber sheet having an aromatic polymer and metal nanoparticles. | 2011-05-26 |
| 20110121228 | REVALUATION OF AQUEOUS WASTE STREAMS IN THE PROPYLENE OXIDE/STYRENE CO-PRODUCTION PROCESS - The present disclosure describes a method for the revaluation of aqueous waste streams generated in the propylene oxide and styrene co-production processes. In particular, it discloses a method of reducing the organic contaminant load from a highly contaminated aqueous stream and recovery from said stream of organic compounds that may be recirculated or used as fuel in the co-generation of energy, and which comprises: acidification of said aqueous stream with inorganic acid at a pH less than 4.5; separation of the two resulting phases at a temperature greater than 40° C.; washing of the organic phase produced in the previous step with an aqueous solution of excess acid and separation of the two resulting phases. | 2011-05-26 |
| 20110121229 | ENANTIOSELECTIVE ZWITTERIONIC ION-EXCHANGE MATERIAL - An enantioselective zwitterionic ion-exchange material comprising a chiral selector component (SO) comprising at least one cation exchange group and at least one anion exchange group and a carrier, carrying said selector component, wherein the chiral selector component comprises at least one chiral linker moiety to connect said ion exchange groups in a non-macro-cyclic fashion, and said chiral linker moiety contains at least one π-π interaction site. | 2011-05-26 |
| 20110121230 | Process for Producing Water-Absorbing Polymer Particles with Improved Color Stability - A process for producing water-absorbing polymer particles, wherein at least one aliphatic aldehyde or reaction product thereof with an aliphatic alcohol, an aliphatic amine, ammonia, a hypophosphite or a phosphite is added. | 2011-05-26 |
| 20110121231 | RECYCLING SUPERABSORBENT POLYMER FINES - A process is described for recycling superabsorbent polymer fines into a process that includes treating the superabsorbent polymer fines with caustic and a polymerization step for making the superabsorbent polymer gel. The process requires treating the superabsorbent polymer fines with a caustic, followed by mixture with polymerizable monomer solution, and polymerizing the mixture of the superabsorbent polymer fines and monomer to form the aqueous fluid absorbent polymer. In the process, the fines are incorporated into the new polymer gel and become indistinguishable there from. The gel may then be comminuted into a particulate dried and then separated into a portion having a desired minimum particle size in a fines portion having less than the desired size. The particulate may then be coated with a surface crosslinking agent and surface additives and heated for surface conversion. | 2011-05-26 |
| 20110121232 | HIGH DIELECTRIC CONSTANT LIQUID CRYSTAL - Provided are liquid crystal compounds and mixtures incorporating the same. The liquid crystal compounds of the invention generally comprise a terminal cyclopentene group, along with at least two other ring groups. | 2011-05-26 |
| 20110121233 | COMPOSITION FOR FORMING SUBSTRATE, AND PREPREG AND SUBSTRATE USING THE SAME - Disclosed herein is a composition for forming a substrate, including: a compound prepared by polymerizing a liquid crystal thermosetting oligomer having one or more soluble structural units in a main chain thereof and having a thermosetting group at one or more of two ends of the main chain thereof with a fluorine compound having a functional group which can react with the main chain of the liquid crystal thermosetting oligomer. | 2011-05-26 |
| 20110121234 | PHOSPHOR, PROCESS FOR PRODUCING THE SAME, AND LUMINESCENT DEVICE - A green phosphor for emitting light, a spectrum of which is sharp, in an ultraviolet and visible light region, which has higher green light brightness than the conventional rare earth-activated sialon phosphor and has higher durability than the conventional oxide phosphor, is provided. The phosphor being characterized in that Al and a metal element M (here, M is Eu) are incorporated into a crystal of a nitride or oxynitride having a βSi | 2011-05-26 |
| 20110121235 | COMPOUND COMPRISING PHENYL PYRIDINE UNITS - Compounds of formula I may be used in optoelectronic devices | 2011-05-26 |
| 20110121236 | COMPOSITION AND LIGHT-EMITTING ELEMENT USING THE COMPOSITION - Disclosed is a composition comprising a compound having a saturated heterocyclic structure, in which the number of ring-constituting members containing a nitrogen atom is 5 or more, and a phosphorescent compound. | 2011-05-26 |
| 20110121237 | HYDROGEN ODORANTS AND ODORANT SELECTION METHOD - The present invention provides a method for evaluating the properties of hydrogen to improve the safety of hydrogen fuel, and provides a method for selecting proper odorants for hydrogen. Odorized hydrogen containing suitable odorants in appropriate concentrations with hydrogen are also provided. | 2011-05-26 |
| 20110121238 | COMPOSITE OXIDE FOR HYDROCARBON REFORMING CATALYST, PROCESS FOR PRODUCING THE SAME, AND PROCESS FOR PRODUCING SYNGAS USING THE SAME - A composite oxide for a hydrocarbon reforming catalyst which maintains the catalytic activity at a high level over a long period of time, a process for producing the catalyst, and a process for producing syngas using the catalyst, are provided. The composite oxide for a hydrocarbon reforming catalyst is obtained by a process including preparing a mixed solution for impregnation which contains catalytic active components of Co, or Co and Ni, one or more oxidation resistance enhancing components selected from the elements of Group 3B and the elements of Group 6A of the Periodic Table, and one or more additive metal components selected from Ca and Mg; impregnating a carrier formed from a porous molded body selected from magnesia and a composite of magnesia and calcia, with the mixed solution for impregnation; drying the impregnated carrier; and calcining the dried carrier in an oxidizing atmosphere. | 2011-05-26 |
| 20110121239 | CATALYTIC REFORMING METHODS - A catalytic reforming method is disclosed herein. The method includes sequentially supplying a plurality of feedstocks of variable compositions to a reformer. The method further includes adding a respective predetermined co-reactant to each of the plurality of feedstocks to obtain a substantially constant output from the reformer for the plurality of feedstocks. The respective predetermined co-reactant is based on a C/H/O atomic composition for a respective one of the plurality of feedstocks and a predetermined C/H/O atomic composition for the substantially constant output. | 2011-05-26 |
| 20110121240 | COATED ELECTROACTIVE MATERIALS - A process includes suspending an electroactive material in a solvent, suspending or dissolving a carbon precursor in the solvent; and depositing the carbon precursor on the electroactive material to form a carbon-coated electroactive material. Compositions include a graphene-coated electroactive material prepared from a solution phase mixture or suspension of an electroactive material and graphene, graphene oxide, or a mixture thereof. | 2011-05-26 |
| 20110121241 | Process for Producing Carbon Nanotubes from Renewable Raw Materials - A subject of the present invention is a process for producing carbon nanotubes, the process comprising:
| 2011-05-26 |
| 20110121242 | MASTERBATCH FOR ELECTROCONDUCTIVE THERMOPLASTIC POLYMER, PROCESS TO PREPARE SUCH MASTERBATCH, AND THE USE THEREOF - The present invention provides a process to prepare a masterbatch comprising more than 0 wt % and up to 70 wt % carbon black with a DBP absorption of at least 200 ml/100 g and a thermoplastic polymer and, optionally, further additives, comprising the steps of mixing in random order successively or simultaneously, at an elevated temperature, a liquid medium, carbon black, and thermoplastic polymer, and, optionally, the additives, wherein the liquid medium is ultimately present in an amount of more than 0 wt % and up to 80 wt % on the total weight of carbon black and thermoplastic polymer; subsequently cooling and pelletizing the composition; separating off the liquid medium by extraction with a solvent; and drying the composition. Additionally provided are a masterbatch suitable for preparing an electroconductive thermoplastic polymer composition and a process to prepare an electroconductive thermoplastic polymer composition. | 2011-05-26 |
| 20110121243 | ANISOTROPIC CONDUCTIVE ADHESIVE COMPOSITION, ANISOTROPIC CONDUCTIVE FILM, CIRCUIT MEMBER CONNECTING STRUCTURE AND METHOD FOR MANUFACTURING COATED PARTICLES - The anisotropically conductive adhesive composition according to the present invention is an anisotropically conductive adhesive composition to connect a first circuit member where a first circuit electrode is formed on the principal surface of a first substrate and a second circuit member where a second circuit electrode is formed on the principal surface of a second substrate with the first circuit electrode and the second circuit electrode placed opposite, wherein the anisotropically conductive adhesive composition comprises an adhesive and a coated particle where at least part of the surface of a conductive particle is coated with an insulating material containing a polymer electrolyte and an inorganic oxide fine particle. | 2011-05-26 |
| 20110121244 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE - A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound. | 2011-05-26 |
| 20110121245 | OPTICAL FILM - Disclosed is an optical film characterized by containing 0.001-10 parts by mass of an ultraviolet absorbent represented by general formula (1) per 100 parts by mass of a cellulose ester. (In the formula, n represents an integer of 1-4; when n is 1, R represents an alkyl group having 3-30 carbon atoms, and when n is 2-4, R represents a residue obtained by removing a carboxylic acid group from an aliphatic or aromatic polybasic acid having 1-34 carbon atoms; and R1, R2, R3 and R4 independently represent a hydrogen atom or an alkyl group having 1-4 carbon atoms.) | 2011-05-26 |
| 20110121246 | HEAT STORAGE COMPOSITIONS AND THEIR MANUFACTURE - A thermal energy storage composition having improved fire retardant properties comprising: A) particles of organic phase change material (PCM), B) particles of fire retarding magnesium hydroxide and/or aluminium hydroxide, and/or C) magnesia cement, in which the particles of (A) organic phase change material are distributed uniformly throughout particles of (B) magnesium hydroxide and/or aluminium hydroxide and/or throughout (C) magnesia cement. The composition is suitable for producing a variety of articles having thermal energy storage properties and/or temperature regulation. Suitable articles include fibres, fabrics, foams, heating and cooling devices and building materials. | 2011-05-26 |
| 20110121247 | FAULT MONITORING SYSTEM FOR ELECTRIC SINGLE OR POLY-PHASE CHAIN HOIST MOTORS - Single networkable fault monitoring system for monitoring electrical parameters on at least one electrical phase on at least one interconnected electric chain hoist for various fault conditions. When at least one fault signal is generated, at least one kill signal is generated in the fault monitoring system, causing generation of at least one kill function in at least one chain hoist motor controller. The generated kill function causes a power disconnection to all connected electric chain hoists and/or the entire network of fault monitoring systems. When a fault has been generated, each individual fault signal outputs fault specific diagnostic data from the fault monitoring system to help an operator identify the fault specific electric chain hoist(s) and the specific fault type(s). This data is intended for the purpose of interfacing with an operator monitoring device, LED indicators, data logger, and/or any other user-defined application or combination thereof. | 2011-05-26 |
| 20110121248 | SECURITY BARRIER FOR ROAD SAFETY - Road safety barrier belonging to the type of barriers that are mounted along road shoulders and outer edges to serve as protective elements and it is configured by a plurality of vertical poles to which the upper w-beam is affixed above and the corresponding lower support element is affixed below to allow assembling the protective woven mesh element to this structure but at a distance from the plurality of vertical poles, said structure comprising support elements ( | 2011-05-26 |
| 20110121249 | GROOVED RAILING SYSTEM - A railing system is disclosed having spacers for spacing apart railing pickets, and a rail which engages the spacers and secures the railing pickets. The spacers are made up of a planar top member, side members extending from longitudinal edges of the top member, and wings extending outwardly from a central position of the side members. The rail comprises a substantially elongated planar member and first and second substantially parallel elongated side-walls perpendicularly connected to the planar member. The side-walls each comprise first and second groove members, which are spaced apart to form grooves running substantially parallel to the elongated planar member. The grooves are adapted to receive the plurality of spacers such that the wings of the spacers abut against the first and second groove members when the spacers are assembled in the railing system. | 2011-05-26 |
| 20110121250 | HIGH INTEGRATION PHASE CHANGE MEMORY DEVICE HAVING REDUCED THICKNESS PHASE CHANGE LAYER AND FABRICATION METHOD THEREOF - A high integration phase change memory device includes a semiconductor substrate including an access device, a heating electrode formed on the access device, a phase change nano band formed on the heating electrode, and an interlayer insulating layer for supporting the phase change nano band formed in both sides of the phase change nano band. | 2011-05-26 |
| 20110121251 | SINGLE MASK ADDER PHASE CHANGE MEMORY ELEMENT - A method of fabricating a phase change memory element within a semiconductor structure and a semiconductor structure having the same that includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region formed within a dielectric layer at a same layer within the semiconductor structure, depositing a conformal film within the opening and recessing the conformal film to expose the upper surface of the bottom electrode, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material. | 2011-05-26 |
| 20110121252 | SINGLE MASK ADDER PHASE CHANGE MEMORY ELEMENT - A method of fabricating a phase change memory element within a semiconductor structure and a semiconductor structure having the same that includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region formed within a dielectric layer at a same layer within the semiconductor structure, depositing a conformal film within the opening and recessing the conformal film to expose the upper surface of the bottom electrode, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material. | 2011-05-26 |
| 20110121253 | MEMORY DEVICE - A memory device is described. The memory device comprises a bottom electrode, a first pair of spacers, a second pair of spacers and a phase-change element. The bottom electrode has a lower horizontal portion and a vertical portion, and the vertical portion has a top surface and a side. The first pair of spacers covers the side of the vertical portion. The second pair of spacers covers a first portion of the top surface of the vertical portion. The phase-change element is contacted a second portion of the top surface of the vertical portion. | 2011-05-26 |
| 20110121254 | MEMORY DEVICE AND CBRAM MEMORY WITH IMPROVED RELIABILITY - A memory device including: one inert electrode including an electrically conductive material, a part of at least one material of resistivity higher than that of the material of the inert electrode, positioned around the inert electrode, a solid electrolyte positioned on at least one part of the inert electrode and of the part of electrically insulating material, and including metal ions originating from an ionizable metal part positioned on the solid electrolyte. The ratio between the coefficient of electrical resistivity of the material of resistivity higher than that of the material of the inert electrode and the coefficient of electrical resistivity of the material of the inert electrode is equal to or higher than approximately 100, and the coefficient of thermal conductivity of the electrically insulating material is equal to or higher than approximately 10 W·m | 2011-05-26 |
| 20110121255 | Integrated Memory Arrays, And Methods Of Forming Memory Arrays - Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces. Electrically conductive tiers may be formed along sidewall edges of the pieces. The pieces may then be patterned into an array of wires, with the array having vertical columns and horizontal rows. Individual wires may have first ends joining to the electrically conductive tiers, may have second ends in opposing relation to the first ends, and may have intermediate regions between the first and second ends. Gate material may be formed along the intermediate regions. Memory cell structures may be formed at the second ends of the wires. A plurality of vertically-extending electrical interconnects may be connected to the wires through the memory cell structures, with individual vertically-extending electrical interconnects being along individual columns of the array. Some embodiments include memory arrays incorporated into integrated circuitry. | 2011-05-26 |
| 20110121256 | PROGRAMMABLE RESISTIVE MEMORY CELL WITH FILAMENT PLACEMENT STRUCTURE - Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm. | 2011-05-26 |
| 20110121257 | Growth of Single Crystal Nanowires - A diode is provided which comprises a cathode, an anode, and at least one crystalline nanowire in electrical communication with said cathode and said anode. The crystalline nanowire comprises a group IV metal which is substantially straight and substantially free of nanoparticles. | 2011-05-26 |
| 20110121258 | RECTIFYING ANTENNA DEVICE WITH NANOSTRUCTURE DIODE - A rectifying antenna device is disclosed. The device comprises a pair of electrode structures, and at least one nanostructure diode contacting at least a first electrode structure of the pair and being at least in proximity to a second electrode structure of the pair. At least one electrode structure of the pair receives AC radiation, and the nanostructure diode(s) at least partially rectifies a current generated by the AC radiation. | 2011-05-26 |
| 20110121259 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses. | 2011-05-26 |
| 20110121260 | QUANTUM DOT PHOSPHOR FOR LIGHT EMITTING DIODE AND METHOD OF PREPARING THE SAME - Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured. | 2011-05-26 |
| 20110121261 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced. | 2011-05-26 |
| 20110121262 | LED DEVICE WITH RE-EMITTING SEMICONDUCTOR CONSTRUCTION AND CONVERGING OPTICAL ELEMENT - A light source is provided comprising an LED component having an emitting surface, which may comprise: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor construction which comprises a second potential well not located within a pn junction having an emitting surface; or which may alternately comprise a first potential well located within a pn junction and a second potential well not located within a pn junction; and which additionally comprises a converging optical element. | 2011-05-26 |
| 20110121263 | Coupled Asymmetric Quantum Confinement Structures - Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed. | 2011-05-26 |
| 20110121264 | COMPOSITE STRUCTURE OF GRAPHENE AND NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME - A composite structure includes; graphene and at least one substantially one-dimensional nanostructure disposed on the graphene. | 2011-05-26 |
| 20110121265 | GROUP III NITRIDE SEMICONDUCTOR OPTICAL DEVICE - A group III nitride semiconductor optical device | 2011-05-26 |
| 20110121266 | QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS - Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well. | 2011-05-26 |
| 20110121267 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device comprises a light transmissive substrate, a light scattering region which is disposed on the light transmissive substrate, and a light emissive layer having a luminescent point. The luminescent point is spaced from the light reflective electrode by a distance of d which satisfies the following equation: | 2011-05-26 |
| 20110121268 | LIGHT-EMITTING ELEMENT - The present invention relates to an organic thin-film light emitting device containing an organic compound represented by formula (1) and a donor compound. the light emitting device ca achieve both of the low-voltage driving operation and high luminance efficiency. | 2011-05-26 |
| 20110121269 | DEUTERATED COMPOUNDS FOR ELECTRONIC APPLICATIONS - This invention relates to deuterated aryl-anthracene compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound. | 2011-05-26 |
| 20110121270 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting device including a substrate on which an organic light emitting unit is formed, wherein the organic light emitting unit sequentially includes a first electrode, an organic layer, and a second electrode; and a passivation layer covering the substrate and the second electrode, and a method of manufacturing the organic light emitting device. | 2011-05-26 |
| 20110121271 | Organic light emitting diode display - An organic light emitting diode (OLED) display is provided. The OLED display includes a substrate main body, an OLED on the substrate main body, and a capping layer on the OLED. The capping layer includes a film having at least two layers of different refractive indexes. | 2011-05-26 |
| 20110121272 | ORGANIC LIGHT EMITTING DEVICE, LIGHTING APPARATUS INCLUDING ORGANIC LIGHT EMITTING DEVICE, AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS INCLUDING ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device having increased outcoupling efficiency, a lighting apparatus including the organic light emitting device, and an organic light emitting display apparatus including the organic light emitting device. The organic light emitting device includes a substrate, a first electrode layer that is uniformly patterned on the substrate, a low refractive conductive layer disposed on the first electrode layer, and having a conductive material with a lower refractive index than a refractive index of an organic layer that is disposed on the low refractive conductive layer, and a second electrode layer formed on the organic layer. | 2011-05-26 |
| 20110121273 | CARBON NANOTUBE COMPOSITE, ORGANIC SEMICONDUCTOR COMPOSITE, AND FIELD-EFFECT TRANSISTOR - A carbon nanotube composite in which a conjugated polymer containing repeating units containing a fused heteroaryl unit having a nitrogen-containing double bond in the ring, and a thiophene unit is attached to at least a part of the surface of a carbon nanotube. The present invention reduces the hysteresis of a field-effect transistor having a semiconductor layer containing a carbon nanotube. | 2011-05-26 |
| 20110121274 | ORGANIC ELECTROLUMINESCENCE DEVICE - The present invention relates to organic electroluminescent devices which comprise fluorene derivatives and spirobifluorene derivatives as matrix material for phosphorescent emitters. | 2011-05-26 |
| 20110121275 | Anthracene Derivative, and Light Emitting Element, Light Emitting Device, and Electronic Device Using the Anthracene Derivative - It is an object to provide a noble anthracene derivative, a light emitting element with a high luminous efficiency, and further a light emitting element with a long lifetime. It is another object to provide a light emitting device and electronic device with a long lifetime by using the light emitting element. An anthracene derivative represented by General Formula (1) is provided. Since the anthracene derivative represented by General Formula (1) has a high luminous efficiency, when the anthracene derivative is used for a light emitting element, the light emitting element can have a high luminous efficiency. Further, when the anthracene derivative represented by General Formula (1) is used for a light emitting element, the light emitting element can have a long lifetime. | 2011-05-26 |
| 20110121276 | ORGANIC ELECTROLUMINESCENT DEVICE, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC APPARATUS - An organic electroluminescent device includes a substrate; a plurality of light-emitting elements, each including an organic light-emitting layer held between a pair of electrodes; a display region which overlaps the substrate in plan view and in which the light-emitting elements are disposed; a first connection line which is disposed around the display region and is connected to one of the pair of electrodes and on which a transparent conductive layer is disposed; and a gas barrier layer covering end and top surfaces of the first connection line and top surfaces of the light-emitting elements. | 2011-05-26 |
| 20110121277 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic EL device | 2011-05-26 |
| 20110121278 | SOLUTION COMPOSITION AND POLYMER LIGHT-EMITTING DEVICE - To provide a solution composition having a significantly high viscosity comprising one or more solvent(s) and one or more polymer(s) having a polystyrene-reduced Z-average molecular weight of 5.0×10 | 2011-05-26 |
| 20110121279 | Light-emitting material comprising multinuclear complexes - Light emitting materials comprising multinuclear metal complexes comprising at least two metal atoms and a metal bridging ligand bound to said at least two metal atoms. It relates more particularly to a multinuclear complex of Formula (I): {-[L]2M-B-}n, wherein L is a bidentate ligand; M represents a transition metal having an atomic number of at least 40, and each M can be the same or different at each occurrence; B is a 2-connecting short metal bridging ligand bound to said at least two metal atoms, where the metal bridging ligand comprises coordinating atoms independently selected from the group consisting of nitrogen, phosphorous, carbon, oxygen, sulphur and selenium in 1,2 or 1,3 mutual position.(1,2-μ or 1,3-μ bonding mode); and n is an integer larger than 1. | 2011-05-26 |
| 20110121280 | SUBSTRATE, CONDUCTIVE PATTERN FORMATION PROCESS AND ORGANIC THIN FILM TRANSISTOR - The present invention provides a substrate with excellent thin line reproducibility and excellent adhesion with conductive wiring, a conductive pattern formation process employing the substrate and an organic thin film transistor employing the substrate. The substrate is characterized in that it has a sensitizing dye and a compound represented by the following formula (I): | 2011-05-26 |
| 20110121281 | ORGANIC TRANSISTOR AND METHOD FOR PRODUCING THE SAME - The object of the present invention is to provide an organic transistor using an organic semiconductor having excellent transistor properties, and a method for producing the organic transistor, the present invention providing, first, an organic transistor including a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, wherein the organic semiconductor layer (d) contains a fluorine-based compound (surfactant), and, secondly, a method for producing an organic transistor comprising a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, the method comprising: a step in which the organic semiconductor layer (d) is formed on the insulating layer (c) by printing or coating an organic semiconductor solution containing a fluorine-based surfactant; or a step in which the insulating layer (d) is formed on the organic semiconductor layer (d) containing a fluorine-based surfactant by printing or coating. | 2011-05-26 |
| 20110121282 | MANUFACTURING METHOD OF ORGANIC ELECTROLUMINESCENCE ELEMENT, LIGHT-EMITTING DEVICE, AND DISPLAY DEVICE - The present invention provides a method of manufacturing an organic EL element using a relief printing method that can prevent color mixing caused during ink supply, a light-emitting device with which color mixing can be prevented, and a display device comprising the light-emitting device. Specifically, provided is, for example, a method of manufacturing an organic electroluminescent element that comprises a pair of electrodes and an organic layer located between the electrodes, the method comprising: providing a substrate on which a plurality of partition walls are arranged in substantially parallel to each other, and in which a groove portion is formed on a face of each of the partition walls along a longitudinal direction of the partition walls, the face opposing another face near the substrate; and forming the organic layer by supplying an ink containing a material for the organic layer to concave portions formed with the partition walls and the substrate, using a relief printing plate in which a plurality of convex portions are arranged in substantially parallel to each other so as to correspond to the concave portions. | 2011-05-26 |
| 20110121283 | METHOD FOR SELECTIVE DEPOSITION AND DEVICES - A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 2011-05-26 |
| 20110121284 | TRANSISTOR - Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer. | 2011-05-26 |
| 20110121285 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring, a second wiring, a third wiring, a fourth wiring, a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided over a substrate including a semiconductor material, and the second transistor includes an oxide semiconductor layer. | 2011-05-26 |
| 20110121286 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes memory cells connected to each other in series and a capacitor. One of the memory cells includes a first transistor connected to a bit line and a source line, a second transistor connected to a signal line and a word line, and a capacitor connected to the word line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and one electrode of the capacitor are connected to one another. | 2011-05-26 |
| 20110121287 | LIGHT-EMITTING DEVICES AND METHODS FOR MANUFACTURING THE SAME - Disclosed is a light-emitting device including a permanent substrate, an adhesive layer on the permanent substrate, a current diffusion layer on the adhesive layer, and a semiconductor stack layer on the current diffusion layer. The current diffusion layer has an etched portion and an unetched portion, wherein the etched and unetched portions have a horizontal height difference. The horizontal height difference and the current diffusion layer thickness have a ratio of 20:100 to 70:100. | 2011-05-26 |
| 20110121288 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor. | 2011-05-26 |
| 20110121289 | THIN FILM TRANSISTOR - A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal. | 2011-05-26 |
| 20110121290 | Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region. | 2011-05-26 |
| 20110121291 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface. | 2011-05-26 |
| 20110121292 | CALIBRATION OF TEMPERATURE SENSITIVE CIRCUITS WITH HEATER ELEMENTS - One or more heating elements are disposed on a semiconductor substrate proximate a temperature sensitive circuit disposed on the substrate (e.g., bandgap circuit, oscillator). The heater element(s) can be controlled to heat the substrate and elevate the temperature of the circuit to one or more temperature points. One or more temperature measurements can be made at each of the one or more temperature points for calibrating one or more reference values of the circuit (e.g., bandgap voltage). | 2011-05-26 |
| 20110121293 | Apparatus and method for predetermined component placement to a target platform - The present invention relates generally to assembly techniques. According to the present invention, the alignment and probing techniques to improve the accuracy of component placement in assembly are described. More particularly, the invention includes methods and structures to detect and improve the component placement accuracy on a target platform by incorporating alignment marks on component and reference marks on target platform under various probing techniques. A set of sensors grouped in any array to form a multiple-sensor probe can detect the deviation of displaced components in assembly. | 2011-05-26 |
| 20110121294 | Semiconductor device - A semiconductor device includes a plurality of first data input/output terminals, a plurality of second data input/output terminals, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip includes a plurality of first data input/output pads connected with the first data input/output terminals, a first test circuit, and a first memory portion. The first test circuit generates a first test result in response to a data output from the first memory portion at a test operation. The second semiconductor chip includes a plurality of second data input/output pads connected with the second data input/output terminals, a second and a third test circuits, and a second memory portion. The second test circuit generates a second test result in response to a data output from the second memory portion, and the third test circuit generates a third test result in response to the second test result and the first test result input from the first test circuit of the first semiconductor chip and outputs the third test result from a specified second data input/output terminal. | 2011-05-26 |
| 20110121295 | Structure for Bumped Wafer Test - A semiconductor device includes a substrate having a first conductive layer disposed on a top surface of the substrate. A first insulation layer is formed over the substrate and contacts a sidewall of the first conductive layer. A second conductive layer is formed over the first insulation layer. The second conductive layer includes a first portion disposed over the first conductive layer and a second portion that extends beyond an end of the first conductive layer. A second insulation layer is formed over the second conductive layer. A first opening in the second insulation layer exposes the first portion of the second conductive layer. A second opening in the second insulation layer away from the first opening exposes the second portion of the second conductive layer. The second insulation layer is maintained around the first opening. A conductive bump is formed over the first portion of the second conductive layer. | 2011-05-26 |
| 20110121296 | THIN FILM TRANSISTOR COMPOSITIONS, AND METHODS RELATING THERETO - A process for forming at least one transistor on a substrate is described. The substrate comprises a polyimide and a nanoscopic filler. The polyimide is derived substantially or wholly from rigid rod monomers and the nanoscopic filler has an aspect ratio of at least 3:1. The substrates of the present disclosure are particularly well suited for thin film transistor applications, due at least in part to high resistance to hygroscopic expansion and relatively high levels of thermal and dimensional stability. | 2011-05-26 |
| 20110121297 | WIRING STRUCTURE, THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY DEVICE - Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer. | 2011-05-26 |
| 20110121298 | MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE - A method includes the steps of preparing a multilayer film | 2011-05-26 |
| 20110121299 | ORGANIC LIGHT-EMITTING DISPLAY - An organic light-emitting display apparatus including a thin-film transistor (TFT) is disclosed. In one embodiment, the organic light-emitting display apparatus includes a thin-film transistor (TFT) and an organic light-emitting device electrically connected to the TFT. The apparatus further includes a light blocking portion formed directly above at least a portion of the TFT and configured to prevent light, emitted from the organic light-emitting device, from entering the portion of the TFT. | 2011-05-26 |
| 20110121300 | DISPLAY DEVICE - An object is to provide a display device whose frame can be narrowed and whose display characteristics are excellent. The display device includes a driver circuit and a pixel portion. The driver circuit and the pixel portion are formed using a dual-gate thin film transistor and a single-gate thin film transistor, respectively. In the dual-gate thin film transistor in the display device, a semiconductor layer is formed using a microcrystalline semiconductor region and a pair of amorphous semiconductor regions, and a gate insulating layer and an insulating layer are in contact with the microcrystalline semiconductor region of the semiconductor layer. | 2011-05-26 |
| 20110121301 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device having a uniform thin film in a pixel region, and a method of manufacturing the organic light emitting display device. The organic light emitting display device includes a substrate, a pixel electrode disposed on the substrate, and a pixel define layer disposed on the substrate and having an opening exposing the pixel electrode. The entire top surface of the pixel electrode is exposed through the opening. | 2011-05-26 |
