21st week of 2014 patent applcation highlights part 14 |
Patent application number | Title | Published |
20140138606 | RESISTANCE VARIABLE MEMORY DEVICE - Embodiments relate to a resistance variable memory device and a method for forming the same. The resistance variable memory device may include a first electrode, a second electrode spaced apart from the first electrode, a first resistance variable pattern provided over the first electrode and surrounding a lower portion of the second electrode, and a spacer surrounding a sidewall of the first resistance variable pattern. According to embodiments, the resistance variable pattern can be prevented from being damaged in an etching process and an air gap surrounding a portion of the electrode may contribute to improve reliability and an operational speed of the resistance variable memory device. | 2014-05-22 |
20140138607 | NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A non-volatile memory device comprises first wires on and above a first plane; second wires extending in a direction crossing the first wires, on and above a second plane, third wires extending in parallel with the second wires on and above a fourth plane, and memory cells provided to correspond to three-dimensional cross-points of the first wires and the third wires, respectively, each of the memory cells including a transistor and a variable resistance element, the transistor including a first main electrode, a second main electrode, and a control electrode, the variable resistance element being placed on and above a third plane and including a lower electrode, an upper electrode and a variable resistance layer, wherein the upper electrode is connected to corresponding one of the third wires; and further comprises a first contact plug extending from the first main electrode to the second plane and connected to corresponding one of the second wires; a second contact plug extending from the second main electrode to the second plane; and a third contact plug extending from the second contact plug and connected to the lower electrode; wherein the second main electrode and the lower electrode are connected to each other via the second contact plug and the third contact plug. | 2014-05-22 |
20140138608 | MEMORY CELL STRUCTURES - The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode, and a storage element between the first electrode and the electrode contact portion of the second electrode. | 2014-05-22 |
20140138609 | HIGH DENSITY RESISTIVE MEMORY HAVING A VERTICAL DUAL CHANNEL TRANSISTOR - Resistive memory cell array fabricated with unit areas able to be scaled down to 4 F | 2014-05-22 |
20140138610 | MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICE READOUT - A memory device includes a first nanowire, a second nanowire and a magnetic tunnel junction device coupling the first and second nanowires. | 2014-05-22 |
20140138611 | IN NANOWIRE, DEVICE USING THE SAME AND METHOD OF MANUFACTURING In NANOWIRE - There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole. | 2014-05-22 |
20140138612 | FULLERENE-DOPED NANOSTRUCTURES AND METHODS THEREFOR - Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes. | 2014-05-22 |
20140138613 | LIGHT EMITTING DIODE HAVING HETEROGENEOUS PROTRUSION STRUCTURES - An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency. | 2014-05-22 |
20140138614 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light emitting layer; a conductive metal layer; and a first stress application layer. The first semiconductor layer contains a nitride semiconductor crystal and receives tensile stress in a (0001) plane. The second semiconductor layer contains a nitride semiconductor crystal. The light emitting layer has an average lattice constant larger than a lattice constant of the first semiconductor layer. The conductive metal layer has a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal. The first stress application layer is provided between the second semiconductor layer and the light emitting layer. The first stress application layer relaxes tensile stress applied from the metal layer to the second semiconductor layer. | 2014-05-22 |
20140138615 | LIGHT EMITTING DIODE - An LED includes a base and an LED die grown on the base. The LED die includes two spaced electrodes and two exposed semiconductor layers. The two electrodes are respectively formed on top surfaces of the two semiconductor layers. At least one of the electrodes extends downwardly from the top surface of the corresponding semiconductor layer along a lateral edge of the LED die to electrically connect an exterior electrode via transparent conducting resin. | 2014-05-22 |
20140138616 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from Al | 2014-05-22 |
20140138617 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of Al | 2014-05-22 |
20140138618 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a light emitting layer disposed between a n-type semiconductor layer and a p-type semiconductor layer, and a hole supply layer disposed between the light emitting layer and the p-type semiconductor layer. The hole supply layer is made from material In | 2014-05-22 |
20140138619 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than | 2014-05-22 |
20140138620 | Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same - A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires. | 2014-05-22 |
20140138621 | GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - A light emitting device including a substrate, a first conductive type semiconductor layer on the substrate, at least one In | 2014-05-22 |
20140138622 | Photodetection - Apparatus and methods are provided. A first apparatus includes: a semiconductor film; and at least one semiconductor nanostructure, including a heterojunction, configured to modulate the conductivity of the semiconductor film by causing photo-generated carriers to transfer into the semiconductor film from the at least one semiconductor nanostructure. A second apparatus includes: a semimetal film; and at least one semiconductor nanostructure, including a heterojunction, configured to generate carrier pairs in the semimetal film via resonant energy transfer, and configured to generate an external electric field for separating the generated carrier pairs in the semimetal film. | 2014-05-22 |
20140138623 | TRANSISTORS FROM VERTICAL STACKING OF CARBON NANOTUBE THIN FILMS - A carbon nanotube field-effect transistor is disclosed. The carbon nanotube field-effect transistor includes a first carbon nanotube film, a first gate layer coupled to the first carbon nanotube film and a second carbon nanotube film coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first carbon nanotube film as well as to influence an electric field of the second carbon nanotube film. At least one of a source contact and a drain contact are coupled to the first and second carbon nanotube film and are separated from the first gate layer by an underlap region. | 2014-05-22 |
20140138624 | VERTICAL STACKING OF GRAPHENE IN A FIELD-EFFECT TRANSISTOR - A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet. | 2014-05-22 |
20140138625 | TRANSISTORS FROM VERTICAL STACKING OF CARBON NANOTUBE THIN FILMS - A carbon nanotube field-effect transistor is disclosed. The carbon nanotube field-effect transistor includes a first carbon nanotube film, a first gate layer coupled to the first carbon nanotube film and a second carbon nanotube film coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first carbon nanotube film as well as to influence an electric field of the second carbon nanotube film. At least one of a source contact and a drain contact are coupled to the first and second carbon nanotube film and are separated from the first gate layer by an underlap region. | 2014-05-22 |
20140138626 | VERTICAL STACKING OF GRAPHENE IN A FIELD-EFFECT TRANSISTOR - A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet. | 2014-05-22 |
20140138627 | Organic Electroluminescent Device With Delayed Fluorescence - Novel devices containing organic compounds containing electron donor and acceptor characteristics and that act as emissive dopants are provided. The energy ratio obtained by dividing the T1 energy of the emissive dopant by ΔE | 2014-05-22 |
20140138628 | Electroactive Fluoroacylated Arylamines - Fluoroacyl arylamines are disclosed for use in an electronic applications, such as, in photoresponsive and electroresponsive devices. | 2014-05-22 |
20140138629 | OPTOELECTRONIC DEVICE FORMED WITH CONTROLLED VAPOR FLOW - An organic optoelectronic device (OED) includes a plurality of OED cells separated by a vapor flow barrier that extends away from a substrate surface. The vapor flow barrier partially defines an OED cell area and helps prevent stray organic material deflected away from the substrate surface during deposition from being deposited outside the cell area. An organic vapor jet (OVJ) print head can be used to deposit organic material along the vapor flow barrier and may include one or more features configured to capture some of the stray organic material. A method that includes use of vapor flow barriers and/or capturing stray organic material can facilitate high-density printing of OED cells such as OLEDs with sharply defined edges and without cross-contamination among adjacent cells. | 2014-05-22 |
20140138630 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - In an aspect, an organic light-emitting display apparatus including: a substrate; at least one color filter formed on the substrate; an overcoat layer covering the at least one color filter; a first passivation layer formed on the overcoat layer; a light scattering layer formed on the first passivation layer; a first electrode formed on the light scattering layer; a second electrode facing the first electrode; and an organic layer located between the first and second electrodes is provided. | 2014-05-22 |
20140138631 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device including a sub-pixel including a pixel electrode, a counter electrode, and a light emitting layer between the pixel electrode and the counter electrode, a planarization layer covering the counter electrode, and an auxiliary electrode in the planarization layer and coupled to the counter electrode. | 2014-05-22 |
20140138632 | AMINE-BASED COMPOUND AND ORGANIC LIGHT- EMITTING DEVICE INCLUDING THE SAME - An amine-based compound and an organic light-emitting diode including the amine-based compound are provided. The amine-based compound may be used between a pair of electrodes of an organic light-emitting diode. For example, the amine-based compound may be used in an emission layer and/or between the emission layer and an anode (for example, in a hole injection layer, a hole transport layer, a functional layer having a hole injection ability and a hole transport ability). Accordingly, an organic light-emitting diode including a first electrode, a second electrode facing the first electrode, and an organic layer that is interposed between the first electrode and the second electrode, and includes the amine-based compound is provided. | 2014-05-22 |
20140138633 | ORGANIC LIGHT-EMITTING DEVICE - Provided is an organic light-emitting device including a compound represented by Formula 1 below: | 2014-05-22 |
20140138634 | ORGANIC LIGHT-EMITTING DISPLAY SYSTEM AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display system and a method of manufacturing the same are disclosed. In one aspect, the organic light-emitting display system includes a substrate, a display unit that defines an active area on the substrate and includes a plurality of thin film transistor (TFTs), and an encapsulation layer that seals the display unit and has a stacked structure in which at least a first inorganic film, a first organic film, and a second inorganic film are sequentially stacked. The TFTs includes an active layer, a gate electrode, a source electrode, a drain electrode, and an interlayer insulating film that is disposed between the gate electrode and the source electrode and between the gate electrode and the drain electrode, wherein the second inorganic film directly contacts the interlayer insulating film outside the active area. Accordingly, in various embodiments, since an inorganic layer of a thin film encapsulation layer is prevented from being cracked, penetration of external moisture or oxygen into the active area of the display can be reduced or prevents. | 2014-05-22 |
20140138635 | STRETCHABLE BASE PLATE, STRETCHABLE ORGANIC LIGHT-EMITTING DISPLAY DEVICE USING THE SAME, AND METHOD OF MANUFACTURING THE STRETCHABLE BASE PLATE AND THE STRETCHABLE ORGANIC LIGHT EMITTING DISPLAY DEVICE - A stretchable organic light-emitting display device includes a stretchable base plate including a stretchable substrate, first metal electrodes that are separated from each other and located in a plurality of rows on a the stretchable substrate, and first power wirings electrically coupling respective ones of the metal electrodes of each row, a light-emitting layer on the stretchable base plate, second metal electrodes located in a plurality of rows on the light-emitting layer and corresponding to the first metal electrodes, second power wirings for electrically coupling respective ones of the second metal electrodes of each row, and an encapsulation substrate covering the second power wiring. | 2014-05-22 |
20140138636 | ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING IMPROVED LIGHT EMITTING EFFICIENCY - In an organic light emitting display device according to an embodiment of the present disclosure, a light extraction reduction preventing layer is disposed between a display unit disposed on a substrate and an encapsulation layer for protecting the display unit, and as a result, light emission efficiency may be improved by reducing an amount of light dissipating while light generated from an emission layer of the display unit is extracted to the outside. | 2014-05-22 |
20140138637 | FLEXIBLE DISPLAY - A flexible display having an array of pixels or sub-pixels is provided. The display includes a flexible substrate and an array of thin film transistors (TFTs) corresponding to the array of pixels or sub-pixels on the substrate. The display also includes a first plurality of metal lines coupled to gate electrodes of the TFTs and a second plurality of metal lines coupled to source electrodes and drain electrodes of the TFTs. At least one of the first plurality of metal lines and the second plurality of metal lines comprises a non-stretchable portion in the TFT areas and a stretchable portion outside the TFT areas. | 2014-05-22 |
20140138638 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - Disclosed is an organic light emitting diode display including: a substrate including a display area configured to display an image and a peripheral area surrounding the display area; a plurality of pad wires at the peripheral area of the substrate; and an inspection wire having a zigzag form on the plurality of pad wires. | 2014-05-22 |
20140138639 | ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode includes a first electrode including a reflective metal layer of a light-reflective metal, an upper transparent conductive layer on the reflective metal layer, and an amorphous oxide layer on the upper transparent conductive layer, an organic emission layer on the first electrode, and a second electrode on the organic emission layer. | 2014-05-22 |
20140138640 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode (OLED) display that is flexible is disclosed. According to one aspect it includes: a flexible substrate, a moisture permeation preventing layer formed on the flexible substrate, a barrier layer formed on the moisture permeation preventing layer, an OLED formed on the barrier layer, a thin film encapsulation layer covering the OLED, and a lower protection film attached beneath the flexible substrate. | 2014-05-22 |
20140138641 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the method includes: forming a barrier layer on a base substrate of a mother panel, forming a plurality of display units in units of cell panels on the barrier layer and forming an encapsulation layer on each of the plurality of display units of the cell panels. The method further includes applying an organic film to an interface portion between the cell panels and cutting along the interface portion applied with the organic film. Accordingly, cracks are prevented from occurring in the barrier layer when the mother panel is cut in units of the cell panels, thereby reducing a defect rate of a product and stabilizing its quality. | 2014-05-22 |
20140138642 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a substrate, a thin film transistor (TFT) on the substrate, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, an uneven pattern unit on the substrate and spaced apart from the TFT, the uneven pattern including an insulating film, a pixel electrode on the uneven pattern unit, an intermediate layer on the pixel electrode and including an organic light-emitting layer, and a counter electrode on the intermediate layer. | 2014-05-22 |
20140138643 | MUTLI-DISPLAY APPARATUS - Provided is a multi-display apparatus. The multi-display apparatus includes a first display including a region configured to allow external light to pass therethrough, a first module electrically coupled to the first display unit, a second display coupled to the first display, the second display overlapping the first module and being configured to not allow external light to pass therethrough, and a second module electrically coupled to the second display. | 2014-05-22 |
20140138644 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display includes: a substrate; a semiconductor layer formed on the substrate and including a switching semiconductor layer, a driving semiconductor layer, and a light emission control semiconductor layer spaced apart from each other; a first gate insulating layer covering the semiconductor layer; a light emission control gate electrode formed on the first gate insulating layer and overlapping the light emission control semiconductor layer; a second gate insulating layer covering the light emission control gate electrode; a switching gate electrode and a driving gate electrode formed on the second gate insulating layer and respectively overlapping the switching semiconductor layer and the driving semiconductor layer; and an interlayer insulating layer covering the switching gate electrode, the driving gate electrode, and the second gate insulating layer. A doping concentration of a channel region of the driving semiconductor layer is higher than a doping concentration of a channel region of the light emission control semiconductor layer. | 2014-05-22 |
20140138645 | ORGANIC LIGHT EMTTING DISPLAY DEVICE - An organic light emitting display device includes: a substrate; a display unit on the substrate; and an encapsulation layer on the display unit, the encapsulation layer including a plurality of inorganic layers and a plurality of organic layers, the plurality of inorganic layers and the plurality of organic layers being alternately located, and the plurality of organic layers being at a region where the plurality of inorganic layers is located. The plurality of inorganic layers covers the display unit and is sequentially on the substrate, and areas of each of the inorganic layers are increased moving in a direction away from the display unit. | 2014-05-22 |
20140138646 | ORGANIC LIGHT-EMITTING DIODE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting diode (OLED) display apparatus including a substrate, an insulation layer on the substrate, and an align mark formed of an insulation material, wherein an upper surface of the insulation layer contacts a lower surface of the align mark. | 2014-05-22 |
20140138647 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An OLED display includes: a substrate including a display area with a plurality of pixels; an encapsulation substrate at the display area; and a sealant formed along an edge of the encapsulation substrate between the substrate and the encapsulation substrate to bond the substrate to the encapsulation substrate. The sealant includes a plurality of straight line portions and crossing portions formed by two straight line portions crossing each other. | 2014-05-22 |
20140138648 | DISPLAY DEVICE - According to one embodiment, a display device, includes: a display unit and a control unit. The display unit has a plurality of segments. Each of the plurality of segments includes a plurality of organic light emitting layers to emit light of mutually different colors. The plurality of segments forms one of a plurality types of images by changing the colors of the emitted light from the plurality of segments. The control unit drives each of the plurality of segments of the display unit to emit light. | 2014-05-22 |
20140138649 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device comprises a substrate, a first optical structure, a transparent electrode, an organic light emitting structure, a reflecting layer and a second optical structure. The substrate has a first surface and a second surface. The first optical structure is disposed on the first surface and has a first haze. The transparent electrode is disposed on the first optical structure. The organic light emitting structure is disposed on the transparent electrode. The reflecting layer is disposed on the organic light emitting structure. The second optical structure is disposed on the second surface and has a second haze, wherein the first haze is less than the second haze. | 2014-05-22 |
20140138650 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND DISPLAY PANEL THEREOF - An organic light emitting diode (OLED) display device and a display panel thereof are provided. The organic light emitting diode display panel comprises a first substrate, a first electrode, an organic light emitting layer, a second electrode, and a second substrate. The first electrode is disposed on the first substrate. The organic light emitting layer is disposed on the first electrode. The second electrode is disposed on the organic light emitting layer. The second substrate is located on the second electrode. The material of the second electrode comprises an alkaline earth element and silver. The second electrode comprises a first portion and a second portion, and the first portion is located between the second portion and the first substrate. The ratios of the alkaline earth element to silver in the first portion and in the second portion are different. | 2014-05-22 |
20140138651 | ORGANIC LIGHT-EMITTING DIODE DISPLAY PANEL AND METHOD FOR FABRICATING THE SAME - Disclosed is an organic light-emitting diode (OLED) display panel. An OLED display panel comprises a plurality of signal lines and a thin film transistor formed on a substrate, an interlayer insulating layer, a first electrode, a bank, an organic light-emitting layer, a second electrode, a first passivation layer, an organic layer, a second passivation layer and a barrier film, wherein the bank is formed to completely cover the interlayer insulating layer, and an inclination formed by side surfaces of the bank and the interlayer insulating layer is made to be gradual. | 2014-05-22 |
20140138652 | BLUE PHOSPHORESCENCE COMPOUND AND ORGANIC LIGHT EMITTING DIODE USING THE SAME - A blue phosphorescence compound and an organic light emitting diode using the same are disclosed. The blue phosphorescence compound is represented by Chemical Formula 1 below: | 2014-05-22 |
20140138653 | OSMIUM (IV) COMPLEXES FOR OLED MATERIAL - A novel compound having the formula Os(L) | 2014-05-22 |
20140138654 | POLY ALPHA-AMINO ACID AND FERROELECTRIC MEMORY ELEMENT USING SAME - Ferroelectric memory elements which contain a poly α-amino acid which is a copolymer containing a glutamic acid-γ-ester unit represented by the formula (I), defined herein, and a glutamic acid-γ-ester unit represented by the formula (II), defined herein, in a molar ratio of units of formula (I) to units of formula (II) of 10/90-90/10 are useful as recording elements such as RFID and the like. | 2014-05-22 |
20140138655 | INK FOR FORMING FUNCTIONAL LAYER, INK CONTAINER, DISCHARGING APPARATUS, METHOD FOR FORMING FUNCTIONAL LAYER, METHOD FOR MANUFACTURING ORGANIC EL ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPARATUS - An ink for forming a functional layer includes a first component that contains at least one kind of aromatic solvent of which a boiling point is higher than or equal to 250° C. and lower than or equal to 350° C., a second component that contains at least one kind of aliphatic solvent of which a boiling point is higher than or equal to 200° C., and a third component that is a positive hole injection material (m-MTDATA) for forming a positive hole injection layer, in which a solubility of the third component in the first component is higher than the solubility of the third component in the second component, a mixing ratio of the second component is 30 vol %, the boiling point of the first component is higher than the boiling point of the second component, and a difference between the boiling points thereof is higher than or equal to 30° C. | 2014-05-22 |
20140138656 | SUBSTRATE ASSEMBLY OF AN OLED - A method for manufacturing an organic electroluminescent display device (OLED), wherein an arrangement of layers is applied to a substrate such that first conductors extend in a first direction as well as in a second direction, while between intersections of the conductors an organic electroluminescent connection has been provided which, under the influence of an electric tension, emits light. The substrate is manufactured from plastic and is provided with a surface structure which forms a boundary for at least a number of the layers to be applied. Also provided is a substrate intended for use in a method for manufacturing an organic electroluminescent display device, wherein the substrate has been manufactured from plastic and is provided with a surface structure which forms a boundary for at least a number of the layers to be applied. Further provided is an organic electroluminescent display device obtained with the method. | 2014-05-22 |
20140138657 | EMITTING COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE USING THE SAME - An embodiment of the present invention provides an emitting compound of following formula: | 2014-05-22 |
20140138658 | METHOD FOR PRODUCING ORGANIC LIGHT-EMITTING ELEMENT, METHOD FOR AGING ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC LIGHT-EMITTING DEVICE, ORGANIC DISPLAY PANEL, AND ORGANIC DISPLAY DEVICE - A manufacturing method for an organic light-emitting element includes: a first step of forming a first electrode, and forming an organic layer including a light-emitting layer; a second step of forming a second electrode, and thereby forming an element structure including the first electrode, the organic layer, and the second electrode; and a third step of performing an aging process by applying electric power between the first electrode and the second electrode in the element structure. a duration of the application of electric power in the third step is determined as the time elapsed before a time point at which a rate of decrease in a luminance of the light-emitting layer is substantially equal to a rate of decrease in a luminance of the element structure. | 2014-05-22 |
20140138659 | NOVEL COMPOUNDS AND ORGANIC ELECTRONIC DEVICE USING SAME - The present invention provides a new compound and an organic electronic device using the same. The compound according to the present invention may serve as hole injection, hole transporting, electron injection and transporting, and light emitting materials and the like in an organic electronic device comprising an organic light emitting device, and the organic electronic device according to the present invention shows excellent properties in terms of efficiency, driving voltage and service life. | 2014-05-22 |
20140138660 | PROCESS FOR CONTROLLING THE ACCEPTOR STRENGTH OF SOLUTION-PROCESSED TRANSITION METAL OXIDES FOR OLED APPLICATIONS - The present invention provides a process for the adjustment of the electron acceptor strength of a transition metal oxide (TMO) to the HOMO of a semiconducting hole transport layer material (HTL material) in a device comprising an anode, a layer of said TMO deposited on said anode and a layer of said HTL material deposited on said TMO layer, comprising: depositing a solution comprising a precursor for said TMO on said anode, wherein the precursor solution has a pH selected so that the acceptor strength of the TMO for which the solution is a precursor is adjusted to the HOMO of said HTL material; drying the deposited solution to form a solid layer precursor layer; depositing a solution of said HTL material onto said solid layer precursor layer; and annealing thermally the resulting product to give the desired device having TMO at the interface between said anode and said HTL. | 2014-05-22 |
20140138661 | COMPOUNDS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to crosslinkable compounds, to the crosslinked compounds obtained from these compounds, and to processes for the preparation thereof. The invention is furthermore directed to the use of these compounds in electronic devices and to the corresponding electronic devices themselves. | 2014-05-22 |
20140138662 | LIGHT-EMITTING COMPONENTS AND METHOD FOR PRODUCING A LIGHT-EMITTING COMPONENT - A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or over the first electrode; a second translucent electrode on or over the organic electroluminescent layer structure; and a mirror layer structure on or over the second electrode, wherein the mirror layer structure has a lateral thermal conductance of at least 1*10 | 2014-05-22 |
20140138663 | MATERIAL FOR FORMING ORGANIC LIGHT-EMITTING LAYER, COATING LIQUID FOR FORMING ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC LIGHT-EMITTING ELEMENT AND LIGHT SOURCE DEVICE, AND METHOD FOR MANUFACTURING SAME - In an organic light-emitting element including a first electrode, a second electrode, and a light-emitting layer placed between the first electrode and the second electrode, the light-emitting layer includes a host material, a first emitter, and a second emitter, the emission peak wavelength of the first emitter is longer than the emission peak wavelength of the second emitter, and an aromatic heterocyclic ligand or an auxiliary ligand of the first emitter include an electron withdrawing group. Accordingly, an organic light-emitting element can be provided in which the HOMO value of a specific luminescent dopant is closer to the HOMO value of another luminescent dopant. | 2014-05-22 |
20140138664 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - In an organic electroluminescence display device ( | 2014-05-22 |
20140138665 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS - A solid-state image pickup device is provided which includes a plurality of pixels provided in a semiconductor substrate, the pixels including a plurality of photoelectric conversion portions and MOS transistors which selectively read out signals therefrom, at least one organic photoelectric conversion film on the photoelectric conversion portions, and an isolation region provided in the organic photoelectric conversion film at a position corresponding to between the pixels to perform optical and electrical isolation. | 2014-05-22 |
20140138666 | Diode for a Printable Composition - An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between about 2.5 to 7 microns; a first terminal coupled to the light emitting region on a first side, the first terminal having a height between about 1 to 6 microns; and a second terminal coupled to the light emitting region on a second side opposite the first side, the second terminal having a height between about 1 to 6 microns. | 2014-05-22 |
20140138667 | ORGANIC SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME - An organic semiconductor device includes a laminate and films sealing the laminate in which excellent connection precision is achieved between connection lands and electrodes by suppression of slipping between the laminate and the films upon sealing of the laminate under evacuation, and the laminate is highly sealed. The organic semiconductor device has, between a laminate and a first film substrate, an antislip members that suppress slipping between the laminate and the first film substrate upon sealing of the laminate. An open hole and an electrode contained in the laminate are kept aligned by suppressing of the slipping. The electrode contained in the laminate is connected outside the device through the open hole by a conductive material. | 2014-05-22 |
20140138668 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD OF THE SAME - An organic light emitting diode (OLED) display includes: a first substrate including a display area and a non-display area; a driving element on the display area of the first substrate, and including a driving thin film transistor, a switching thin film transistor, and a capacitor; a circuit unit on the non-display area of the first substrate; an organic light emitting element on the driving element, and including a pixel electrode, an organic emission layer, and a common electrode; an inorganic protective layer covering the circuit unit and the common electrode of the organic light emitting diode; a sealing member on the inorganic protective layer in the non-display area of the first substrate; and a second substrate on the sealing member. | 2014-05-22 |
20140138669 | DELAYED-FLUORESCENCE MATERIAL AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME - A delayed fluorescence material comprising a compound represented by the general formula below. At least one of R | 2014-05-22 |
20140138670 | ORGANIC ELECTROLUMINESCENCE ELEMENT AND COMPOUND USED THEREIN - An organic electroluminescence element in which a compound represented by the general formula below is used in a light-emitting layer exhibits a high emission efficiency and is inexpensive to provide. At least one of R | 2014-05-22 |
20140138671 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a data line disposed on the base substrate, a gate line crossing the data line, a first insulation layer disposed on the base substrate, an active pattern disposed on the first insulation layer and comprising a channel comprising an oxide semiconductor, a source electrode connected to the channel, and a drain electrode connected to the channel, a second insulation layer disposed on the active pattern, and contacting to the source electrode and the drain electrode, a gate electrode disposed on the second insulation layer, and overlapping with the channel, a passivation layer disposed on the gate electrode and the second insulation layer, and a pixel electrode electrically connected to the drain electrode through a first contact hole formed through the passivation layer and the second insulation layer. | 2014-05-22 |
20140138672 | CONTROLLED MANUFACTURING METHOD OF METAL OXIDE SEMICONDUCTOR AND METAL OXIDE SEMICONDUCTOR STRUCTURE HAVING CONTROLLED GROWTH CRYSTALLOGRAPHIC PLANE - A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor. | 2014-05-22 |
20140138673 | SELF-ALIGNED METAL OXIDE TFT WITH REDUCED NUMBER OF MASKS AND WITH REDUCED POWER CONSUMPTION - A method of fabricating MOTFTs includes positioning opaque gate metal on a transparent substrate, depositing gate dielectric material overlying the gate metal and a surrounding area, and depositing metal oxide semiconductor material thereon. Etch stop material is deposited on the semiconductor material. Photoresist defines an isolation area in the semiconductor material. Exposing the photoresist from the rear surface of the substrate and removing exposed portions to leave the etch stop material uncovered except for a portion overlying and aligned with the gate metal. Etching uncovered portions of the semiconductor material to isolate the TFT. Using the photoresist, selectively etching the etch stop layer to leave a portion overlying and aligned with the gate metal and defining a channel area in the semiconductor material. Depositing and patterning conductive material to form source and drain areas. | 2014-05-22 |
20140138674 | SEMICONDUCTOR DEVICE - A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured. | 2014-05-22 |
20140138675 | SEMICONDUCTOR DEVICE - Oxide layers which contain at least one metal element that is the same as that contained in an oxide semiconductor layer including a channel are formed in contact with the top surface and the bottom surface of the oxide semiconductor layer, whereby an interface state is not likely to be generated at each of an upper interface and a lower interface of the oxide semiconductor layer. Further, it is preferable that an oxide layer, which is formed using a material and a method similar to those of the oxide layers be formed over the oxide layers Accordingly, the interface state hardly influences the movement of electrons. | 2014-05-22 |
20140138676 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a semiconductor film overlapping with the gate electrode with the gate insulating film positioned therebetween, a source electrode and a drain electrode that are in contact with the semiconductor film, and an oxide film over the semiconductor film, the source electrode, and the drain electrode. An end portion of the semiconductor film is spaced from an end portion of the source electrode or the drain electrode in a region overlapping with the semiconductor film in a channel width direction. The semiconductor film and the oxide film each include a metal oxide including In, Ga, and Zn. The oxide film has an atomic ratio where the atomic percent of In is lower than the atomic percent of In in the atomic ratio of the semiconductor film. | 2014-05-22 |
20140138677 | THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF - A thin film transistor and a fabrication method thereof are provided. A metal patterning layer is formed on the metal oxide semiconductor layer of a thin film transistor to shield the metal oxide semiconductor layer from the water, oxygen and light in the environment. | 2014-05-22 |
20140138678 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device ( | 2014-05-22 |
20140138679 | PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES - A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction. | 2014-05-22 |
20140138680 | Semiconductor Device, Electronic Device, and Method of Manufacturing Semiconductor Device - To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability. | 2014-05-22 |
20140138681 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer. | 2014-05-22 |
20140138682 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME - A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode. | 2014-05-22 |
20140138683 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H | 2014-05-22 |
20140138684 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned. | 2014-05-22 |
20140138685 | Array Substrate, Method for Fabricating and Testing Array Substrate, and Display Device - The present invention provides an array substrate, which includes a plurality of pixel units, each pixel unit includes a thin film transistor, a pixel electrode, a common electrode and a passivation layer, the thin film transistor includes an active layer, a gate electrode, a source electrode and a drain electrode, the drain electrode and the pixel electrode are connected, the passivation layer is disposed on the active layer, the source electrode, the drain electrode and the pixel electrode, the common electrode is disposed above the pixel electrode with the passivation layer therebetween, a test electrode is disposed on the active layer and under the passivation layer, the test electrode is electrically insulated from the gate electrode, the source electrode and the drain electrode. Correspondingly, a method for fabricating and a method for testing the array substrate, and a display device including the array substrate are provided. | 2014-05-22 |
20140138686 | PROTECTION OF AN INTEGRATED CIRCUIT AGAINST ATTACKS - An integrated circuit, including: a semiconductor substrate of a first conductivity type; a plurality of regions of the first conductivity type vertically extending from the surface of the substrate, each of the regions being laterally delimited all along its periphery by a region of the second conductivity type; and a device for detecting a variation of the substrate resistance between each region of the first conductivity type and an area for biasing the substrate to a reference voltage. | 2014-05-22 |
20140138687 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes first conductive layers and first interlayer insulating layers stacked alternately with each other, at least one second conductive layer and at least one second interlayer insulating layer formed on the first conductive layers and the first interlayer insulating layers and stacked alternately with each other, a first semiconductor layer passing through the first conductive layers and the first interlayer insulating layers and including polysilicon, and a second semiconductor layer coupled to the first semiconductor layer and passing through the at least one second conductive layer the at least one second interlayer insulating layer, wherein the second semiconductor layer includes silicon germanium. | 2014-05-22 |
20140138688 | THIN FILM TRANSISTOR ARRAY PANEL WITH OVERLAPPING FLOATING ELECTRODES AND PIXEL ELECTRODES - According to an embodiment of the present invention, a thin film transistor array panel includes a gate line and a data line insulated from each other an insulating substrate where the gate line and the data line cross each other to define a pixel region, a thin film transistor (TFT) disposed at an intersection of the gate line and the data line, a floating electrode where at least a portion of the floating electrode overlaps the data line, and a pixel electrode disposed at the pixel region where the pixel electrode is connected to the TFT and overlaps the at least a portion of the floating electrode. | 2014-05-22 |
20140138689 | PHOTOELECTRIC CONVERSION MATERIAL AND METHOD FOR FABRICATING THE SAME - A photoelectric conversion material is disclosed in the present invention and comprises at least a cone material. The cone material is composed of an isomer and comprises a plurality of grains. The sizes of the grains are arranged from smaller ones to larger ones along a direction. In the meantime, a method for fabricating the above photoelectric conversion material is also disclosed here. The method comprises the following steps. First, a precursor is provided. The precursor comprises at least a cone material and the cone material is a multilayer structured material, such as sodium titanate and potassium titanate, formed by stacking first materials and second materials. And then, the precursor is annealed to let the second materials leave from the cone material, and the cone material becomes the above photoelectric conversion material with a plurality of grains. | 2014-05-22 |
20140138690 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes: first and second semiconductor regions each having a protruded shape provided on a substrate, the first semiconductor region including a first source, a first drain, and a first channel provided between the first source and the first drain and extending in a first direction from the first source to the first drain, the first channel having a first width in a second direction perpendicular to the first direction, and the second semiconductor region including a second source, a second drain, and a second channel provided between the second source and the second drain and extending in a third direction from the second source to the second drain, the second channel having a second width in a fourth direction perpendicular to the third direction that is wider than the first width of the first channel. | 2014-05-22 |
20140138691 | THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate includes: pluralities of gate lines and data lines arranged to define a plurality of pixel regions, and a plurality of thin film transistors formed on the pixel regions in such a manner as to include first and second thin film transistors connected to the same gate line and the pixel regions adjacent to each other. Each of the first and second thin film transistors includes: a gate electrode connected to the gate line; a semiconductor layer formed on the gate line in an octagon shape; a source electrode connected to the data line; and a drain electrode formed in an opposite shape to the source electrode. | 2014-05-22 |
20140138692 | ARRAY SUBSTRATES AND OPTOELECTRONIC DEVICES - Disclosed is a method of forming array substrates having a peripheral wiring area and a display area. The method is processed by only three lithography processes with two multi-tone photomasks and one general photomask. In the peripheral wiring area, the top conductive line directly contacts the bottom conductive line without any other conductive layer. The conventional lift-off process is eliminated, thereby preventing a material (not dissolved by a stripper) from suspending in the stripper or remaining on the array substrate surface. | 2014-05-22 |
20140138693 | ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME - An array substrate includes a substrate, a switching element, a pixel electrode, and a common electrode. The substrate includes a plurality of gate lines, data lines insulated from the gate lines, and the data lines extend in a direction crossing the gate lines. The switching element is connected to the gate lines and data lines. The pixel electrode is arranged in a pixel area which is defined on the substrate, and is connected to an output electrode of the switching element. The common electrode corresponds to the pixel area and is insulated from the pixel electrode, and the common electrode has at least one first slit corresponding to the data line. | 2014-05-22 |
20140138694 | ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a display device includes: a substrate; first and second gate electrodes of impurity-doped polycrystalline silicon on the substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers of intrinsic polycrystalline silicon on the gate insulating layer, the first and second active layers corresponding to the first and second active layers, respectively; an interlayer insulating layer on the first and second active layers and including first to fourth active contact holes, the first and second active contact holes exposing side portions of the first active layer, the third and fourth active contact holes exposing side portions of the second active layer; first and second ohmic contact layers of impurity-doped amorphous silicon on the interlayer insulating layer, the first ohmic contact layer contacting the first active layer through the first and second active contact holes, the second ohmic contact layer contacting the second active layer through the third and fourth active contact hole; first source and drain electrodes on the first ohmic contact layer and second source and drain electrodes on the second ohmic contact layer; a data line on the interlayer insulating layer, the data line connected to the first source electrode; a first passivation layer on the first source and drain electrodes, the second source and drain electrodes and the data line; a gate line on the first passivation layer, the gate line connected to the first gate electrode and crossing the data line to define a pixel region; a second passivation layer on the gate line; and a pixel electrode on the second passivation layer, the pixel electrode connected to the second drain electrode. | 2014-05-22 |
20140138695 | LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM AND METHOD OF PRODUCING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS - A method for producing a low temperature polycrystalline silicon thin film, comprising steps of: providing a substrate; forming a thermal conduction and electrical insulation layer, a buffer layer and an amorphous silicon layer on the substrate in this order; and performing a high-temperature treatment and a laser annealing on the amorphous silicon layer to convert the amorphous silicon layer to a polycrystalline silicon thin film, wherein the thermal conduction and electrical insulation layer comprises regular patterns distributed on the substrate. | 2014-05-22 |
20140138696 | POLYCRYSTALLINE SILICON THICK FILMS FOR PHOTOVOLTAIC DEVICES OR THE LIKE, AND METHODS OF MAKING SAME - A method of manufacturing a polycrystalline silicon film includes: depositing a catalyst layer including nickel and depositing nickel nanoparticles on a substrate; exposing the catalyst layer and the nanoparticles to at least silane gas; and heat treating the substrate coated with the catalyst layer and the nanoparticles during at least part of the exposing to silane gas in growing a silicon based film on the substrate. | 2014-05-22 |
20140138697 | GaN-BASED SCHOTTKY DIODE HAVING PARTIALLY RECESSED ANODE - A semiconductor device such as a Schottky diode is provided which includes a substrate, a first active layer disposed over the substrate and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A first electrode has a first portion disposed in a recess in the second active layer and a second portion disposed on the second active layer such that a Schottky junction is formed therewith. A second electrode is in contact with the first active layer. The second electrode establishes an ohmic junction with the first active layer. | 2014-05-22 |
20140138698 | GaN-BASED SCHOTTKY DIODE HAVING DUAL METAL, PARTIALLY RECESSED ELECTRODE - A semiconductor device includes a substrate, a first active layer disposed over the substrate and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A first electrode has a first portion disposed in a recess in the second active layer and a second portion disposed on the second active layer such that a Schottky junction is formed therewith. The first portion of the first electrode has a lower Schottky potential barrier than the second portion of the first electrode. A second electrode is in contact with the first active layer. The second electrode establishes an ohmic junction with the first active layer | 2014-05-22 |
20140138699 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of Al | 2014-05-22 |
20140138700 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a nitride-based semiconductor device includes: preparing a substrate; forming a buffer layer on the substrate, the buffer layer preventing dislocation with the substrate; forming a spacer on the buffer layer; forming a barrier layer on the spacer, the barrier layer forming a hetero-structure with the spacer; forming a protecting layer on the barrier layer; and forming an HfO | 2014-05-22 |
20140138701 | SEMICONDUCTOR DEVICE - The semiconductor device includes a substrate, a first GaN field effect transistor, a second GaN field effect transistor, and a GaN diode. The first GaN field effect transistor is disposed on or above the substrate, and the first GaN field effect transistor is a depletion mode field effect transistor. The second GaN field effect transistor is disposed on or above the substrate, and the second GaN field effect transistor is an enhancement mode field effect transistor. The GaN diode is disposed on or above the substrate. The first GaN field effect transistor, the second GaN field effect transistor, and the GaN diode are disposed on or above a same side of the substrate and electrically connected to each other. | 2014-05-22 |
20140138702 | SUBSTRATE RECYCLING METHOD AND RECYCLED SUBSTRATE - Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface. | 2014-05-22 |
20140138703 | Optoelectronic Semiconductor Body and Method for Producing an Optoelectronic Semiconductor Body - An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas. | 2014-05-22 |
20140138704 | SEMICONDUCTOR DEVICE - A semiconductor device includes a field effect transistor that has a first nitride semiconductor layer and a second nitride semiconductor layer larger in bandgap than the first nitride semiconductor layer formed on a substrate in this order and a gate electrode, a source electrode, and a drain electrode, and uses two-dimensional electron gas formed at the interface between the first and second nitride semiconductor layers as the channel. The field effect transistor further has a p-type nitride semiconductor layer formed between the gate electrode and the drain electrode and electrically connected to the drain electrode. | 2014-05-22 |
20140138705 | SUPER SURGE DIODES - The present disclosure relates to a semiconductor device having a Schottky contact that provides both super surge capability and low reverse-bias leakage current. In one preferred embodiment, the semiconductor device is a Schottky diode and even more preferably a Silicon Carbide (SiC) Schottky diode. However, the semiconductor device may more generally be any type of semiconductor device having a Schottky contact such as, for example, a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). | 2014-05-22 |