17th week of 2010 patent applcation highlights part 15 |
Patent application number | Title | Published |
20100102397 | Transistor, semiconductor device including a transistor and methods of manufacturing the same - A transistor, a semiconductor device including the transistor and methods of manufacturing the same are provided, the transistor including a threshold voltage adjusting layer contacting a channel layer. A source electrode and a drain electrode contacting may be formed opposing ends of the channel layer. A gate electrode separated from the channel layer may be formed. A gate insulating layer may be formed between the channel layer and the gate electrode. | 2010-04-29 |
20100102398 | Material removing processes in device formation and the devices formed thereby - Devices having voids are producible by employing an electrochemical corrosion process. For example, an electrically conductive region is formed to have a surrounding chemically distinct region. Such formation is possible through conventional semiconductor processing techniques such as a copper damascene process. The surrounded conducting material is configured to be in electrical communication with a charge separation structure. The electrically conducting region is contacted with a fluid electrolyte and electromagnetic radiation is made to illuminate the charge separation region to induce separation of electrons and holes. The resulting separated charges are used to drive an electrochemical corrosion process at the conductive material/electrolyte interface resulting in the removal of at least a portion of the electrically conducting material. The induced corrosion leaves a void that is useful, for example, as a highly effective dielectric in integrated circuits, functions to allow component separation such as gear separation in microelectromechanical devices or produces long cavities useful for material separation analogous to the distillation columns used in liquid chromatography. | 2010-04-29 |
20100102399 | Methods of Forming Field Effect Transistors and Devices Formed Thereby - Methods of forming field effect transistors include forming a first gate electrode on a semiconductor substrate and forming insulating spacers on sidewalls of the first gate electrode. At least a portion of the first gate electrode is then removed from between the insulating spacers to thereby expose inner sidewalls of the insulating spacers. Threshold-voltage adjusting impurities are then implanted into the semiconductor substrate, using the insulating spacers as an implant mask. These threshold-voltage adjusting impurities are selected from a group consisting of alkali metals from Group 1 of the periodic chart and halogens from Group 17 of the periodic chart. A second gate electrode is then formed between the inner sidewalls of the insulating spacers. | 2010-04-29 |
20100102400 | LOW-K ISOLATION SPACERS FOR CONDUCTIVE REGIONS - A multi-component low-k isolation spacer for a conductive region in a semiconductor structure is described. In one embodiment, a replacement isolation spacer process is utilized to enable the formation of a two-component low-k isolation spacer adjacent to a sidewall of a gate electrode in a MOS-FET device. | 2010-04-29 |
20100102401 | Semiconductor transistor having a stressed channel - A process is described for manufacturing an improved PMOS semiconductor transistor. Recesses are etched into a layer of epitaxial silicon. Source and drain films are deposited in the recesses. The source and drain films are made of an alloy of silicon and germanium. The alloy is epitaxially deposited on the layer of silicon. The alloy thus has a lattice having the same structure as the structure of the lattice of the layer of silicon. However, due to the inclusion of the germanium, the lattice of the alloy has a larger spacing than the spacing of the lattice of the layer of silicon. The larger spacing creates a stress in a channel of the transistor between the source and drain films. The stress increases IDSAT and I | 2010-04-29 |
20100102402 | METHOD OF FABRICATING A TRANSISTOR WITH SEMICONDUCTOR GATE COMBINED LOCALLY WITH A METAL - A method of forming a field effect transistor comprising a gate formed on an insulating layer, the gate having, in a zone in contact with the insulating layer, a semiconducting central zone and lateral zones in the length of the gate, the method comprising forming a gate comprising a portion of insulating layer, a portion of semiconducting layer formed over the insulating layer, and a portion of mask layer formed over the semiconducting layer; performing an etching of the portion of the mask layer such that only a portion in the centre of the gate remains; and reacting the semiconducting gate with a metal deposited over the gate. | 2010-04-29 |
20100102403 | METHOD AND APPARATUS FOR FABRICATING PIEZORESISTIVE POLYSILICON BY LOW-TEMPERATURE METAL INDUCED CRYSTALLIZATION - The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer. | 2010-04-29 |
20100102404 | Magnetic Tunnel Junction and Method of Fabrication - In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes applying a dielectric layer to a surface, applying a metal layer to the dielectric layer, and adding a cap layer on the dielectric layer. The method also includes forming a magnetic tunnel junction (MTJ) stack such that an electrode of the MTJ stack is disposed on the metal layer and the cap layer contacts a side portion of the metal layer. An adjustable depth to via may connect a top electrode of the MTJ stack to a top metal. | 2010-04-29 |
20100102405 | ST-RAM EMPLOYING A SPIN FILTER - A memory cell that includes a first electrode layer; a spin filter layer that includes a material that has exchange splitting in the conduction band; and a magnetic layer, wherein the magnetization of the second magnetic layer can be effected by the torque of electrons tunneling through, wherein the spin filter layer is between the first electrode layer and the magnetic layer. | 2010-04-29 |
20100102406 | MAGNETIC STACK DESIGN - A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer. | 2010-04-29 |
20100102407 | MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %. | 2010-04-29 |
20100102408 | ELECTRON TUBE - An electron tube of the present invention includes: a vacuum vessel including a face plate portion made of synthetic silica and having a surface on which a photoelectric surface is provided, a stem portion arranged facing the photoelectric surface and made of synthetic silica, and a side tube portion having one end connected to the face plate portion and the other end connected to the stem portion and made of synthetic silica; a projection portion arranged in the vacuum vessel, extending from the stem portion toward the photoelectric surface, and made of synthetic silica; and an electron detector arranged on the projection portion, for detecting electrons from the photoelectric surface, and made of silicon. | 2010-04-29 |
20100102409 | Image sensor element and image sensor - An image sensor element is provided according to an embodiment which comprises image sensor element portions sensitive to at least partially different wavelength ranges. | 2010-04-29 |
20100102410 | LIGHT SENSOR - A light sensor includes an element forming region having a light detection region. The element forming region excluding the light detection region is covered with a conductive film having a light shielding property, and the light detection region is covered with a conductive film having a light transmissive property. A method for preventing electromagnetic noise from entering a light sensor includes applying an electromagnetic shield conductive film to the light sensor and removing the electromagnetic shield conductive film at a region of the light sensor facing a light detection region. | 2010-04-29 |
20100102411 | PHOTODETECTOR FOR BACKSIDE-ILLUMINATED SENSOR - A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer. | 2010-04-29 |
20100102412 | GERMANIUM PHOTODETECTOR AND METHOD OF FABRICATING THE SAME - Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer. | 2010-04-29 |
20100102413 | LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD AND POSITION CONTROL METHOD - A lithographic apparatus includes a support configured to support a patterning device, the patterning device configured to pattern a beam of radiation to form a patterned beam of radiation; a positioning device configured to move the support in a first direction; a measurement device configured to measure a relative position of the patterning device with respect to the support and to generate a measuring signal, the measurement device including a reference unit constructed and arranged to be coupled to the patterning device at a fixed relative position, and a position sensor configured to measure the position of the reference unit with respect to the support, wherein the positioning device is constructed and arranged to correct a position of the support based on the measuring signal. | 2010-04-29 |
20100102414 | SEMICONDUCTOR DEVICE - The present invention aims at providing a semiconductor device that can prevent quality degradation of a signal caused by noise, reduce a malfunction of a circuit caused by latch-up, and secure favorable isolation, and the semiconductor device includes: a first layer with a resistivity higher than 10·cm and lower than 1 k·cm which is formed in a semiconductor substrate; a second layer formed on a surface of the semiconductor substrate so as to be located above the first layer; two semiconductor devices formed in the second layer or on the second layer; and a trench-type insulating region which is located between the two semiconductor devices, is formed in the semiconductor substrate so as to reach the first layer from the surface of the semiconductor substrate, and electrically isolates the two semiconductor devices. | 2010-04-29 |
20100102415 | METHODS FOR SELECTIVE PERMEATION OF SELF-ASSEMBLED BLOCK COPOLYMERS WITH METAL OXIDES, METHODS FOR FORMING METAL OXIDE STRUCTURES, AND SEMICONDUCTOR STRUCTURES INCLUDING SAME - Methods of forming metal oxide structure and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly are disclosed. The metal oxide structures and patterns may be used, for example, as a mask for sublithographic patterning during various stages of semiconductor device fabrication. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the soluble block laterally aligned with the trench and positioned within a matrix of the insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor which impregnates the soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. | 2010-04-29 |
20100102416 | Integrated Circuit Packages Incorporating an Inductor and Methods - Integrated circuit packages incorporating an inductor and methods for their fabrication. The lead frame used in packaging the integrated circuit includes a first area for receiving the integrated circuit, and a second area having a plurality of connections from one side to the other side of the lead frame, thereby forming coil segments. After mounting the integrated circuit and wire bonding its connections, the lead frame is placed on a ferrite plate, the assembly is encapsulated in resin, and the leads trimmed and bent. Mounting of the packaged integrated circuit on a properly prepared printed circuit interconnects the coil segments in the package to coil segments on the printed circuit, thereby forming a single, multi-turn coil around the ferrite plate. Various embodiments are disclosed. | 2010-04-29 |
20100102417 | VAPOR DEPOSITION METHOD FOR TERNARY COMPOUNDS - Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors. | 2010-04-29 |
20100102418 | BIPOLAR DEVICE HAVING IMPROVED CAPACITANCE - The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector that ranges from about 0.9 microns to about 2.0 microns. | 2010-04-29 |
20100102419 | Epitaxy-Level Packaging (ELP) System - An epitaxy-level packaging grows an epitaxial film and transfers it to an assembly substrate. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications. | 2010-04-29 |
20100102420 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a semiconductor device in which an interval between first wells can be shortened by improving a separation breakdown voltage between the first wells and a method for manufacturing the same. A semiconductor device includes a first conductivity type semiconductor substrate | 2010-04-29 |
20100102421 | INTEGRATED CIRCUIT CHIP WITH SEAL RING STRUCTURE - An integrated circuit chip includes an analog and/or RF circuit block and a seal ring structure surrounding the analog and/or RF circuit block. The seal ring structure comprises a continuous outer seal ring and an inner seal ring, wherein the inner seal ring comprises a gap that is situated in front of the analog and/or RF circuit block. | 2010-04-29 |
20100102422 | SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes depositing a mask of low melting point material on a surface of the semiconductor device; depositing a layer to be structured relative to the mask; and removing the mask of low melting point material. | 2010-04-29 |
20100102423 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND WIRING BOARD - A semiconductor device manufacturing method includes (a) bonding a first surface of a metal plate to a substrate, (b) forming a plurality of metal posts that are arranged in vertical and lateral directions in a plan view and include a first metal post and a second metal post, by partially etching the metal plate bonded to the substrate from a second surface of the metal plate, (c) fixing an integrated circuit (IC) element to the second surface of the first metal post, (d) coupling the second metal post and a pad terminal of the integrated circuit element via a conductive material, (e) resin-sealing the integrated circuit element, the metal posts, and the conductive material by providing a resin onto the substrate, and (f) removing the substrate from the resin and the first surfaces of the metal posts sealed using the resin. | 2010-04-29 |
20100102424 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR - The present invention provides a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefor, in which downsizing and cost reduction can be realized. | 2010-04-29 |
20100102425 | ULTRA WIDEBAND SYSTEM-ON-PACKAGE AND METHOD OF MANUFACTURING THE SAME - This research discloses an ultra wideband system-on-package (SoP). The SoP includes a package body; a first integrated circuit mounted on the package body; a first signal transmission unit connected to the first integrated circuit; a signal via connected to the first signal transmission unit and including a slab line and a trough line; and a second signal transmission unit connected to the signal via. The technology of the present research can transmit ultra broadband signals by minimizing discontinuity of signals appearing during vertical transition that occurs in the course of a signal transmission to/from an external circuit, and a fabrication method thereof. | 2010-04-29 |
20100102426 | Dual face package and method of manufacturing the same - Disclosed herein is a dual face package and a method of manufacturing the same. The dual face package includes a semiconductor substrate including a through-electrode connected to a die pad disposed on one side of the semiconductor substrate, and a lower redistribution layer disposed on another side thereof and connected to the through-electrode, an insulating layer including a post electrode connected to the through-electrode, and an upper redistribution layer disposed on one side thereof and connected to the post electrode, and an adhesive layer disposed on the one side of the semiconductor substrate so as to attach the insulating layer to the semiconductor substrate such that the through-electrode is connected to the post electrode. The dual face package is produced by a simple process and is applicable to a large diameter wafer level package. | 2010-04-29 |
20100102427 | SEMICONDUCTOR PACKAGING DEVICE - A semiconductor packaging device is provided. Semiconductor package groups, a side retainer wall, and a filling layer may be located on a base plate. The side retainer wall may be located around the semiconductor package groups. The filling layer may be located between the side retainer wall and the semiconductor package groups. | 2010-04-29 |
20100102428 | SEMICONDUCTOR PACKAGE - A semiconductor package that includes a first semiconductor device mounted on a package substrate and includes an inactive surface having a cavity and an active surface opposite to the inactive surface, a second semiconductor device that is disposed on the active surface and electrically connected to the first semiconductor device, and a third semiconductor device that is disposed on the inactive surface in the cavity and electrically connected to the first semiconductor device. The first semiconductor device includes at least one first through electrode electrically connecting the first semiconductor device to the third semiconductor device through the first semiconductor device. | 2010-04-29 |
20100102429 | FLIP-CHIP PACKAGE STRUCTURE WITH BLOCK BUMPS AND THE WEDGE BONDING METHOD THEREOF - A flip-chip block structure with block bumps comprises a die, a substrate, a first block bump, and a second block bump. The die comprises an active side and a backside, a first die pad and a second die pad are disposed on the active surface, and an electrode layer is disposed on the backside. The first die pad and the second die pad are connected to the pattern side of the substrate via the first block bump and the second block bump respectively. Besides, the first block bump and the second block bump are formed by a wedge bonding method, therefore, the block bumps are more easily formed into larger sizes, which enhance electrical performance and thermal dissipation performance of the flip-chip structure due to a lower contact resistance and a larger contact area between the die and the substrate. | 2010-04-29 |
20100102430 | SEMICONDUCTOR MULTI-CHIP PACKAGE - A semiconductor multichip package includes a substrate having a top surface on which a bonding pad is formed, and a bottom surface opposing the top surface, on which an external connection terminal electrically connected with the bonding pad is formed, a first semiconductor chip mounted on a region of the top surface of the substrate excluding the bonding pad, a ceramic spacer disposed on a top surface of the first semiconductor chip and including a passive device therein, and at least one second semiconductor chip disposed on a top surface of the ceramic spacer. The ceramic spacer includes an interlayer circuit for an electrical connection between the first and second semiconductor chips, and the passive device is electrically connected to at least one of the first and second semiconductor chips. Accordingly, a package with a more compact structure can be realized. | 2010-04-29 |
20100102431 | POWER MODULE AND INVERTER FOR VEHICLES - According to the present invention, a power module in which the thermal stress between a semiconductor chip and a substrate is relaxed by liquefaction of a solder layer, by which the semiconductor chip is positioned on the substrate, such that generation of cracks between the semiconductor chip and the substrate can be prevented and bonding strength is ensured is provided. Further, the following is provided: a power module | 2010-04-29 |
20100102432 | SEMICONDUCTOR PACKAGE - A semiconductor package has an interconnection substrate including a first conductive lead and a second longer conductive lead, and a semiconductor chip including a first cell region, a second cell region, a first conductive pad electrically connected to the first cell region and a second conductive pad electrically connected to the second cell region. The semiconductor chip is mounted to the interconnection substrate with the first and second conductive pads both disposed on and connected to the second conductive lead. | 2010-04-29 |
20100102433 | APPARATUS FOR USE IN SEMICONDUCTOR WAFER PROCESSING FOR LATERALLY DISPLACING INDIVIDUAL SEMICONDUCTOR DEVICES AWAY FROM ONE ANOTHER - A chip-scale or wafer-level package, having passivation layers on substantially all surfaces thereof to form a hermetically sealed package, is provided. The package may be formed by disposing a first passivation layer on the passive or back side surface of a semiconductor wafer. The semiconductor wafer may be attached to a flexible membrane and diced, such as by a wafer saw, to separate the semiconductor devices. Once diced, the flexible membrane may be stretched so as to laterally displace the individual semiconductor devices away from one another and substantially expose the side edges thereof. Once the side edges of the semiconductor devices are exposed, a passivation layer may be formed on the side edges and active surfaces of the devices. A portion of the passivation layer over the active surface of each semiconductor device may be removed so as to expose conductive elements formed therebeneath. | 2010-04-29 |
20100102434 | SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED VOLTAGE TRANSMISSION PATH AND DRIVING METHOD THEREOF - Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip. | 2010-04-29 |
20100102435 | METHOD AND APPARATUS FOR REDUCING SEMICONDUCTOR PACKAGE TENSILE STRESS - A semiconductor package is provided having reduced tensile stress. The semiconductor package includes a package substrate and a semiconductor die. The semiconductor die is coupled electrically and physically to the package substrate and includes a stress relieving layer incorporated therein. The stress relieving layer has a predetermined structure and a predetermined location within the semiconductor die for reducing tensile stress of the semiconductor package during heating and cooling of the semiconductor package. | 2010-04-29 |
20100102436 | SHRINK PACKAGE ON BOARD - A method of forming a device is disclosed. The method includes providing a printed circuit board substrate having a die attach region on a first surface of the substrate. The method also includes attaching a die to a die attach region. The die is electrically coupled to first land pads disposed on the first surface at the periphery of the die attach region. A cap is formed in a target area by a top gate process to produce a cap with an even surface. The cap covers the die and leaves at least the first land pads exposed. | 2010-04-29 |
20100102437 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package includes a semiconductor substrate having a semiconductor device arranged on one surface thereof; a cap substrate having one surface that opposes the one surface of the semiconductor substrate via a gap; a spacer that is arranged between the one surface of the semiconductor substrate and the one surface of the cap substrate, and that joins the semiconductor substrate and the cap substrate; and a filter that is provided on the cap substrate so as to overlap with the semiconductor device without overlapping with the spacer. The semiconductor package and method of manufacture can suppress exfoliation of the filter caused by chipping during the dicing step. | 2010-04-29 |
20100102438 | Semiconductor device and method of manufacturing the same - A semiconductor device includes: a substrate having first and second surfaces, the first surface comprising first and second regions; a first semiconductor chip covering the first region; a first seal covering the second region and the first semiconductor chip; and a second seal covering the second surface. | 2010-04-29 |
20100102439 | SEMICONDUCTOR DEVICE WITH PROTECTIVE SCREEN - A multi-layer substrate has a front face with external pads. An integrated-circuit chip is positioned inside of the multi-layer substrate. An electronic and/or electric component is also positioned inside of the substrate above the integrated-circuit chip. An electrical connection network is formed in the multi-layer substrate to selectively connect the integrated-circuit chip and component together and to the external pads. A first screen is positioned within the multi-layer substrate between the integrated-circuit chip and the electrical connection network, this first screen being connected by vias to the external pads. A second screen is position on a top (external) surface of the multi-layer substrate above the component and electrical connection network, this second screen being connected by vias to the external pads. The integrated-circuit chip is position to be inside the first and second screens. | 2010-04-29 |
20100102440 | HIGH DENSITY THREE DIMENSIONAL SEMICONDUCTOR DIE PACKAGE - A semiconductor package is disclosed including a plurality semiconductor die mounted on stacked and bonded layers of substrate, for example polyimide tape used in tape automated bonding processes. The tape may have a plurality of repeating patterns of traces and contact pads formed thereon. The traces each include aligned interconnect pads on the respective top and bottom surfaces of the substrate for bonding the traces of one pattern to the traces of another pattern after the patterns have been singulated from the substrate, aligned and stacked. Semiconductor die such as flash memory and a controller die are mounted on the traces of the respective patterns on the substrate. In order for the controller die to uniquely address a specific flash memory die in the stack, a group of traces on each substrate supporting the memory die are used as address pins and punched in a unique layout relative to the layout of the traces other substrates. By providing each flash memory semiconductor die on a substrate with a unique layout of address traces, each memory die may be selectively addressed by the controller die. | 2010-04-29 |
20100102441 | SEMICONDUCTOR DEVICE - Between a logic LSI ( | 2010-04-29 |
20100102442 | Heat spreader having single layer of diamond particles and associated methods - A heat spreader is presented which can provide effective thermal management in a cost effective manner. The heat spreader includes a plurality of diamond particles arranged in a single layer surrounded by a metallic mass. The metallic mass cements the diamond particles together. The layer of diamond particles is a single particle thick. Besides the single layer of diamond particles, the metallic mass has substantially no other diamond particles therein. A thermal management system including a heat source and a heat spreader is also presented, along with methods for making and methods for use of such heat spreaders. | 2010-04-29 |
20100102443 | HIGH-FREQUENCY SEMICONDUCTOR DEVICE - An example of a high-frequency semiconductor device includes two unit semiconductor devices. Each of the two unit semiconductor devices has a ground substrate, a high-frequency semiconductor element, an input-side matching circuit, an output-side matching circuit, a side wall member, an input terminal, and an output terminal. The ground substrate has heat-radiating property. The high-frequency semiconductor element is provided on the ground substrate. The input-side matching circuit is connected to the high-frequency semiconductor element. The output-side matching circuit is connected to the high-frequency semiconductor element. The side wall member surrounds at least the high-frequency semiconductor element. The input terminal is connected to the input-side matching circuit. The output terminal is connected to the output-side matching circuit. The two unit semiconductor devices are coupled to each other at upper edges of the side wall members. | 2010-04-29 |
20100102444 | WAFER LEVEL PACKAGE USING STUD BUMP COATED WITH SOLDER - A method of fabricated a wafer level package is described. In one embodiment, the method includes fabricating at least one active device on a semiconductor wafer that has not been singulated, with the active device having a plurality of bonding pads exposed at an upper surface of the wafer. Prior to singulating the semiconductor wafer, a plurality of corresponding stud bumps on the plurality of bonding pads with a wire bonding tool are formed. Thereafter, a molding encapsulation layer is applied over the semiconductor wafer leaving an upper portion of each of the plurality of stud bumps exposed. | 2010-04-29 |
20100102445 | WIRING SUBSTRATE, SOLID-STATE IMAGING APPARATUS USING THE SAME, AND MANUFACTURING METHOD THEREOF - In one embodiment, a miniaturized solid-state imaging apparatus includes a body having a cavity for mounting a semiconductor chip therein. The body has an overhanging portion extending toward the cavity. Further, a lead is disposed within the body. The lead has one end exposed through a top surface of the body and the other end exposed through a bottom surface of the body for electrical connection thereof. | 2010-04-29 |
20100102446 | SEMICONDUCTOR ELECTRONIC COMPONENT AND SEMICONDUCTOR DEVICE USING THE SAME - The problem of the present invention is to provide a chip-on-chip type semiconductor electronic component and a semiconductor device which can meet the requirements for further density increase of semiconductor integrated circuits. | 2010-04-29 |
20100102447 | Substrate of window ball grid array package and method for making the same - The present invention relates to a substrate of a window ball grid array package and a method for making the same. The substrate includes a core layer, a first conductive layer, a second conductive layer, at least one window and at least one via. The window includes a first through hole and a third conductive layer. The first through hole penetrates the substrate and has a first sidewall. The third conductive layer is disposed on the first sidewall and connects the first conductive layer and the second conductive layer. The via includes a second through hole and a fourth conductive layer. The second through hole penetrates the substrate and has a second sidewall. The fourth conductive layer is disposed on the second sidewall and connects the first conductive layer and the second conductive layer. As a result, the substrate has the effect of controlling the characteristic impedance and increasing the signal integrity. | 2010-04-29 |
20100102448 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device according to one embodiment includes: a semiconductor element formed on a semiconductor substrate; a metal wiring formed above the semiconductor element; an amorphous silicon film formed above the semiconductor element, the amorphous silicon film being insulated from the metal wiring; and a metal diffusion blocking film formed above the amorphous silicon film, the metal diffusion blocking film having a property to suppress diffusion of metal atoms in the metal wiring. | 2010-04-29 |
20100102449 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - In a semiconductor device including: an insulating film ( | 2010-04-29 |
20100102450 | ZINC OXIDE BASED COMPOSITES AND METHODS FOR THEIR FABRICATION - A transparent, electrically conductive composite includes a layer of molybdenum oxide or nickel oxide deposited on a layer of zinc oxide layer. The molybdenum component exists in a mixed valence state in the molybdenum oxide. The nickel component exists in a mixed valence state in the nickel oxide. The composite may be utilized in various electronic devices, including optoelectronic devices. In particular, the composite may be utilized as a transparent conductive electrode. As compared to conventional transparent conduct oxides such as indium tin oxide, the composite exhibits superior properties, including a higher work function. | 2010-04-29 |
20100102451 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A trench is formed by a process which removes a damage layer formed on a sidewall of a low dielectric constant layer, a process which forms a second protection insulating layer by a chemical vapor deposition (CVD) technique and forms a second concave portion by covering a sidewall of the low dielectric constant layer with the second protection insulating layer, and a process which shapes the second protection insulating layer by etch back so that a trench has a sidewall that the second protection insulating layer is selectively formed on a surface of the low dielectric constant layer. | 2010-04-29 |
20100102452 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming a cap film, in which pores are formed, on the dielectric film; forming an opening in the cap film and the dielectric film; depositing a conductive material inside the opening; and forming a diffusion barrier film for preventing diffusion of the conductive material on the cap film, after the conductive material is deposited inside the opening, in such a way that a portion of the diffusion barrier film intrudes into the cap film and that a portion of the pores remains. | 2010-04-29 |
20100102453 | Three-Dimensional Integrated Circuit Stacking-Joint Interface Structure - A system, a structure and a method of manufacturing stacked semiconductor substrates is presented. A first substrate includes a first side and a second side. A through substrate via (TSV) protrudes from the first side of the first substrate. A first protruding portion of the TSV has a conductive protective coating and a second protruding portion of the TSV has an isolation liner. The system further includes a second substrate and a joint interface structure that bonds the second substrate to the first substrate at the conductive protective coating of the first protruding portion of the TSV. | 2010-04-29 |
20100102454 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - When an etch stopper film is stacked on a pad electrode in which an opening is provided and a through electrode is embedded in a through hole formed in a semiconductor substrate, a distal end of the through electrode penetrates a part of the pad electrode via the opening and is stopped by the etch stopper film. | 2010-04-29 |
20100102455 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a first layer; a second layer above the first layer; first and second multi-layered structures; and a supporter. The first and second multi-layered structures extend from the first layer to connect to the second layer. The supporter extends from the first layer to connect to the second layer. The supporter is between the first and second multi-layered structures. The supporter is separated from the first and second multi-layered structures by empty space. | 2010-04-29 |
20100102456 | Semiconductor Device and Method of Forming Double-Sided Through Vias in Saw Streets - A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die. | 2010-04-29 |
20100102457 | Hybrid Semiconductor Chip Package - Various apparatus and method of packaging semiconductor chips are disclosed. In one aspect, a method of manufacturing is provided that includes placing a semiconductor chip package into a mold. The semiconductor chip package includes a substrate that has a side and a first semiconductor chip coupled to the side in spaced apart relation to define a space between the first semiconductor chip and the side. A second semiconductor chip is mounted on the first semiconductor chip. At least one conductor wire is electrically coupled to the second semiconductor chip and the substrate. A molding material is introduced into the mold to flow into the space and establish an underfill and encapsulate the first semiconductor chip and the second semiconductor chip. | 2010-04-29 |
20100102458 | SEMICONDUCTOR PACKAGE SYSTEM WITH CAVITY SUBSTRATE AND MANUFACTURING METHOD THEREFOR - A method of manufacturing a semiconductor package system includes: providing a first substrate; providing a second substrate having a cavity, the second substrate being attached to the first substrate; connecting the first substrate to the second substrate using an interconnect, the interconnect being in the cavity; and attaching a semiconductor device to the first substrate or the second substrate. | 2010-04-29 |
20100102459 | SEMICONDUCTOR DEVICE - The semiconductor device includes: a semiconductor chip; a die pad for holding the semiconductor chip; a lead; and a sealing resin material for sealing the semiconductor chip, the die pad and an inner portion of the lead. The die pad has an upset portion protruding upward to form a flat face smaller in area than the semiconductor chip, and the portion of the die pad excluding the upset portion is covered with a buffer resin material smaller in elasticity than the sealing resin material. | 2010-04-29 |
20100102460 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening. | 2010-04-29 |
20100102461 | Semiconductor device and method of manufacturing the same - A semiconductor device including a substrate, a semiconductor chip mounted on the substrate, and an encapsulation resin encapsulating the semiconductor chip, wherein the encapsulation resin contains a first resin region composed of a first resin composition, a second resin region composed of a second resin composition, and a mixed layer formed between the first resin region and the second resin region so as to have the first resin composition and the second resin composition mixed therein is provided. | 2010-04-29 |
20100102462 | STEAM TUBE CONNECTION FOR STEAM HUMIDIFIER - A twist locking connector for a steam humidifier. The steam humidifier includes a tank for heating water to generate steam and a steam tube receiver structure in fluid communication with the tank. The steam tube receiver structure has an opening configured to receive a steam tube, where the opening has a plurality of ramp structures about the opening on a side facing the tank. The steam humidifier also includes a steam tube for transmitting steam from the tank to a duct, the steam tube having a plurality of locking tabs adjacent to an end and a flange adjacent to, but separated by a distance from, the locking tabs. The steam tube is assembled to the steam tube receiver by inserting the steam tube through the opening in the steam tube receiver structure and rotating the steam tube to cause the locking tabs to engage with the ramp structures. | 2010-04-29 |
20100102463 | Method For Mixing A Fluid With At Least One Further Substance And Degassing The Mixture And For Delivering The Mixture - A fluid is mixed with at least one further substance, the fluid mixture is degassed and delivered in such a way that the mixture is prepared in a preparation phase with the following steps:
| 2010-04-29 |
20100102464 | TRANSPARENT CERAMICS AND METHODS OF PREPARATION THEREOF - According to one embodiment, a method for forming a transparent ceramic preform includes forming a suspension of oxide particles in a solvent, adding the suspension to a mold of a desired shape, and uniformly curing the suspension in the mold for forming a preform. The suspension includes a dispersant but does not include a gelling agent. In another embodiment, a method includes creating a mixture without a gelling agent, the mixture including: inorganic particles, a solvent, and a dispersant. The inorganic particles have a mean diameter of less than about 2000 nm. The method also includes agitating the mixture, adding the mixture to a mold, and curing the mixture in the mold at a temperature of less than about 80° C. for forming a preform. Other methods for forming a transparent ceramic preform are also described according to several embodiments. | 2010-04-29 |
20100102465 | PLASTIC LENS MOLDING METHOD - A plastic lens molding method includes: preparing a lens preform having the temperature equal to or higher than a glass transition point temperature; and molding a lens by compressing the lens preform having the temperature equal to or higher than the glass transition point temperature, the compressing of the lens preform being performed by a mold providing a finished lens dimension at a constant temperature equal to or lower than the glass transition point temperature. | 2010-04-29 |
20100102466 | METHOD AND DEVICE FOR PRODUCING AND TREATING PELLETS - The invention relates to a method and a device for producing and treating plastic pellets. According to said method, a melt of the plastic material is granulated to give pellets, the pellets are cooled in a cooling fluid, the pellets are separated from the cooling fluid and the pellets are crystallized. The device according to the invention is characterized by comprising a control unit which monitors the crystallization step and controls the method in such a manner that in case of a disturbance of crystallization the pellets are supplied to an intermediate storage after separation of the pellets from the cooling fluid and as soon as the disturbance is removed, the pellets temporarily stored in the intermediate storage are supplied to crystallization and are crystallized. | 2010-04-29 |
20100102467 | POLYMER UNDERWATER MELT CUTTER AND PROCESSES ASSOCIATED THEREWITH - In an improved polymer melt cutter a gas is added to the cooling liquid before the cooling liquid enters the cutting chamber, or is added directly through the cutting chamber wall. This forms a cooling liquid/gas mixture in the cutting chamber, which has the advantage of providing easier startups, lower operating costs, and other advantages. Processes associated with the improved polymer melt cutter are also disclosed. | 2010-04-29 |
20100102468 | METHOD FOR MANUFACTURING AN ENVIRONMENT-FRIENDLY COMPOSITE MATERIAL - A method for manufacturing an environment-friendly composite material, using polyolefin particles and powder rubber that are made from reclaimed plastic and reclaimed rubber as a raw material, comprises the steps of: powder rubber surface treatment: using interface treatment coupling agent to perform a powder rubber surface treatment to improve the compatibility between the polyolefin particles and the powder rubber; additive treatment: adding the selected additive according to the desired function; blending: melt-blending the polyolefin particles and the powder rubber evenly; extrusion granulating: granulating the evenly-blended polyolefin grain and powder rubber by means of extrusion using a processing machine so as to form the granulated raw material, which has a wide application range and is environment-friendly. | 2010-04-29 |
20100102469 | Strain and Kinetics Control During Separation Phase of Imprint Process - Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process. | 2010-04-29 |
20100102470 | Misalignment Management - A method of determining overlay error between a template and a substrate using placement of template features and placement of substrate features in one or more images. Estimated distortion of the template and/or substrate may be determined using the overlay error. One or more forces acting on the template and/or substrate may be varied based on the estimated distortion for subsequent nano-lithography imprinting. Additionally, bias may be introduced in subsequent imprinting steps based on overlay performance. | 2010-04-29 |
20100102471 | FLUID TRANSPORT AND DISPENSING - Imprint lithography systems and methods for transporting and dispensing polymerizable material on a substrate are described. In one implementation, the transport system utilizes a dispense head, dispense guard, and a shielding block when dispensing the polymerizable material. In another implementation, the transport system comprises one or more filters positioned in an inline manifold for particle reduction or ion reduction. | 2010-04-29 |
20100102472 | Automotive Interior Material and Method of Manufacturing The Same - An automotive interior material with high appearance quality and a method of manufacturing the same includes a door trim (automotive interior material) having a flat portion (main-body portion) covering a door panel and an armrest protruding into the vehicle compartment. Molten resin material added with a foaming agent is supplied into a cavity formed between a pair of molds. Then, opening of the pair of molds by a predetermined amount causes the molten resin material in the cavity to foam. An upper surface (vertical wall portion) of the armrest is connected to the flat portion and extends in a thickness direction of the flat portion. A surface of the upper surface facing outward from the vehicle compartment is formed with a recessed portion. During a vehicle collision, an object in the vehicle presses the arm rest formed on the door trim. Then the door trim is broken and deformed in the recessed portion, so that the armrest is crushed, thus absorbing an impact by a collision. | 2010-04-29 |
20100102473 | METHOD OF MANUFACTURING LIQUID DISCHARGE HEAD - A method of manufacturing a liquid discharge head including a flow path member for forming a flow path communicating with a discharge port discharging a liquid forms a mold of the flow path made of a positive photosensitive resin on a substrate; applies a coated layer on the mold for forming the flow path member, which coated layer includes a solvent, an epoxy resin, and a curing agent of the epoxy resin; removes the solvent from the coated layer at a normal temperature under substantially 1 atm. so that the weight of the coated layer may become 93% or less of that of the coated layer at a time of the applying of the coated layer, and then further removes the solvent from the coated layer under a depressurized condition; cures the coated layer; and removes the mold to form the flow path. | 2010-04-29 |
20100102474 | METHOD FOR PREPARING SUSTAINED RELEASE TABLET - Herein provided is a method for easily preparing a sustained release tablet which contains an orally administrable medicinal component, while maintaining the uniformity of the content of the medicinal component. | 2010-04-29 |
20100102475 | EXPANDED POLYSTYRENE RECYCLING AND HEAT EXTRUDING SYSTEM - An expanded polystyrene (EPS) recycling and extruding machine is shown and described. The machine comprises a conveyor for transporting waste pieces of EPS of various sizes into the device. A housing surrounds upper and lower crushers that break down the EPS pieces in to progressively smaller pieces before depositing them through a screen that selectively prevents pieces above a predetermined size from passing. Below the screen, the small EPS pieces fall into a heated extruding mechanism that melts the pieces into a liquid and urges the liquid forward by means of an Archimedian screw to a nozzle, through which the reconstituted EPS is extruded for collection and reuse. | 2010-04-29 |
20100102476 | Method for manufacturing raised relief maps - A method of making a very high resolution raised relief map ( | 2010-04-29 |
20100102477 | SPRAY HEAD FOR FLUID PRODUCT - A fluid spray head comprising an expulsion channel provided with a spray orifice ( | 2010-04-29 |
20100102478 | Method of fabricating bath-models for nickel shells - A method of model fabrication wherein a cast metal mold is coated with a low melting point metal alloy that is then over-coated with a nickel alloy by electro-deposition to provide a nickel shell mold that may be released from the base-model by melting the low melting point metal alloy. The method is particularly useful for producing thermoplastic elastomeric skins with a predetermined three-dimensional pattern molded thereon. | 2010-04-29 |
20100102479 | Compression mold and molding process - An improved compression molding process uses a separation plate | 2010-04-29 |
20100102480 | Polytetrafluoroethylene Slit Yarn and Method For Manufacturing Same - A slit yarn wherein both side parts of the slit yarn are folded one or more times, and the folded width is substantially uniform along the direction of length of the yarn. In this slit yarn, when the width is measured at 20 or more points at intervals of 0.5 m, and the fluctuation coefficient X shown in the following Equation (1) is calculated on the basis of the average value W(avg) and the standard deviation W(σ), this X is (for example) approximately 4% or less. Furthermore, in the slit yarn of the present invention, the abovementioned folded parts are ordinarily shape-set. | 2010-04-29 |
20100102481 | CARRIER MOLD - A carrier mold having prongs that produces shaped tampons is provided. When subjected to pressure by a pushrod the prongs of the carrier mold flex to substantially or partially open one end of the carrier mold. A method of forming a shaped tampon using the carrier mold is also provided. | 2010-04-29 |
20100102482 | Method and Apparatus for Forming Highly Contoured Composite Parts - A method of forming a flat composite charge into a contoured composite part reduces wrinkles in the part as the charge is being formed. Dies are used to form a portion of charge to the steepest contour of the part, while tension is maintained on the charge as the remaining portions of the charge are formed. | 2010-04-29 |
20100102483 | FLEXIBLE CARRIER MOLD - A carrier mold having prongs that produces shaped tampons is provided. When subjected to pressure the prongs of the carrier mold flex to completely or substantially close one end of the carrier mold. A method of forming a shaped tampon using the carrier mold is also provided. | 2010-04-29 |
20100102484 | SPACER MOLDS WITH RELEASABLE SECUREMENT - A mold for forming a temporary prosthesis has at least two mold members at least partially separable from each other. The at least two mold members cooperatively define a generally enclosed interior cavity for forming the temporary prosthesis. The mold has a securement structure mounted on the at least two mold members for securing the at least two mold members to each other during the forming of the temporary prosthesis. The securement structure is removable from the at least two mold members by hand and without the use of a tool. | 2010-04-29 |
20100102485 | INJECTION MOLDING METHOD FOR MAKING LARGE AND THIN LIGHT GUIDE PLATE - An injection molding method for making a large and thin light guide plate, is provided. First, a first mold and a second mold are provided. The first and second molds each have a molding surface formed thereon. Second, the first mold and the second mold are incorporated together to define a chamber between the molding surfaces under a clamping force selected in a range from 4000 to 4500 kilonewton to the first and second molds. Third, inject a molding material into the chamber with an injection pressure selected in a range from 2000 to 4000 kilogram force per square centimeter and an injection velocity selected in a range from 800 to 1000 millimeter per second. Finally, the first mold and the second mold are separated to obtain the light guide plate. | 2010-04-29 |
20100102486 | METHOD AND ASSOCIATED DEVICE FOR MANUFACTURING APICULTURE HONEYCOMBS - The method comprises differentiated separation of the strips holding the silicone cores with respect to the honeycomb produced, by simply curving one of the strips corresponding to one of the faces of the honeycomb and by progressive action of pulsed magnetic fields in the other of the strips holding the silicone cores, progressively separating the honeycomb and preventing breakages in the walls of the same. In a device equipped with an alignment of electromagnets which act on the strip bearing the elastic cores to be separated and which exert an action of pulsed magnetic fields on the same, progressively separating the strip from the honeycomb. | 2010-04-29 |
20100102487 | Optical System for Use in Stage Control - Imprint lithography benefits from precise alignment between a template and a substrate during imprinting. A moiré signal resulting from indicia on the template and the substrate are acquired by a system comprising a line-scan camera and a digital micromirror device (DMD) which provides a high bandwidth, low-latency signal. Once acquired, the moiré signal may be used directly to align the template and the substrate without need for discrete position/angle encoders. | 2010-04-29 |
20100102488 | METHOD FOR MAKING POLYMERIC WEB EXHIBITING A SOFT AND SILKY TACTILE IMPRESSION - A polymeric web exhibiting a soft and silky tactile impression on at least one side thereof is disclosed. The silky feeling side of the web exhibits a pattern of discrete hair-like fibrils, each of the hair-like fibrils being a protruded extension of the web surface and having a side wall defining an open proximal portion and a closed distal portion. The hair-like fibrils exhibit a maximum lateral cross-sectional diameter of between 2 and 5 mils, and an aspect ratio from 1 to 3. Methods and apparatus for making the polymeric web utilize a three-dimensional forming structure having a plurality of protrusions being generally columnar forms having an average aspect ratio of at least about 1. | 2010-04-29 |
20100102489 | METHOD AND DEVICE FOR THE CONTINUOUS PRODUCTION OF A PLASTIC COMPOUND PIPE COMPRISING A PIPE SOCKET - Into a molding path moving in a direction of conveyance is extruded an internal tube from a first extruder and an external tube from a second extruder, the external tube being concentric with the internal tube. During the production of a normal compound pipe, the smooth internal tube is welded together with the external tube which is provided with transverse grooves. At the transition from the normal compound pipe to the expanded pipe socket, the extruder speed of the first extruder is increased from a speed n1,1 to a speed n1,2. During the production of the pipe socket, the speed of the first extruder is reduced to a speed in1,3, wherein n1,2>n1,3>n1,1 applies. | 2010-04-29 |
20100102490 | METHOD AND APPARATUS FOR MOULDING CANNULAE - The present invention provides apparatus and methods for injection moulding polymeric cannulae from liquid polymeric materials. The method includes injecting pressurised liquid polymer into a mould cavity and into an overflow and forming a conduit by forcing pressurised working fluid through the solidifying liquid polymer into the overflow. The invention provides a mould for fluid-assisted injection moulding articles from polymeric materials, the mould comprising at least two parts defining a cavity having a conduit portion incorporating a needle portion; a channel for liquid polymer ingress; a channel for pressurised fluid ingress; and an overflow in communication with the conduit portion. The mould may incorporate a plurality of cavities. Preferably the volume of the overflow is equal to or greater than the volume of the conduit portion. Preferably the mould incorporates a separating means for separating the overflow from a cannula portion of an article formed in the mould. | 2010-04-29 |
20100102491 | Product method for ceramic structure and production method for ceramic honeycomb structure - This invention provides a production method for a ceramic structure capable of making a extrusion rate coefficient, in extruding of a ceramic structure, greater than that of prior art technologies. In a production method for a ceramic structure by the steps of mixing and kneading a ceramic batch material containing at least ceramic powder and water, extruding the mixture so kneaded, and drying and sintering a resulting extrudate, a water-insoluble liquid lubricant consisting of acyl glycerin and/or a derivative is added to the ceramic batch material. | 2010-04-29 |
20100102492 | Hydraulic Mount Having Double Idle Rate Dip Frequencies of Dynamic Stiffness - An hydraulic mount providing double idle rate dip frequencies of dynamic stiffness, the idle rate dips being vibration orders of an internal combustion engine corresponding to one and two times firing frequencies. The double idle rate dip is achieved by providing the first idle rate dip at the first vibration order via resonance tuning of the idle inertia track, and providing the second idle rate dip at the second vibration order via additional resonance tuning of a tunable air conduit. | 2010-04-29 |
20100102493 | SPRING-MOUNTED VIBRATION SYSTEM TO REDUCE VIBRATION - Spring-mounted vibration system to reduce vibration with a first spring-mounted part and a second spring-mounted part, wherein the first spring-mounted part and the second spring-mounted part can oscillate relative to each in at least one vibration direction and at least one of the spring-mounted parts can be exposed to a return force on a vibration movement. A control unit is arranged with at least one travel linkage which is connected with at least one of the spring-mounted parts and in which is arranged displaceably at least one guide element connected with a spring element generating the return force and/or the other spring-mounted part. | 2010-04-29 |
20100102494 | Damping device for a hatch in a military vehicle - A damping device for a hatch in a military vehicle used during its closing and opening, said hatch being integral with hinges hinged with respect to an interface, wherein said device comprises a tubular body integral with the hinges and hinged between two bearings integral with the interface, said body enclosing two fixed damping means between which a rod is positioned, said rod being mobile in translation to activate one of the damping means during the opening of the hatch and the other damping means during the closing of the hatch. | 2010-04-29 |
20100102495 | Fluid filled type vibration damping device - A fluid filled type vibration damping device including an elastic rubber body elastically connecting an inner shaft member and an outer tube member. The elastic rubber body has a solid rubber wall that includes inside face recesses and outside face recesses respectively formed to either side of the inner shaft member in an axis-perpendicular direction so that a pair of thin portions and a pair of thick portions respectively situated in opposition along mutually orthogonal axes lying in axis-perpendicular directions are formed in the solid rubber wall. A deepest part of the inside face recesses is situated towards an axial small diameter side of the solid rubber wall with respect to an deepest part of the outside face recesses, with the inside face recesses and the outside face recesses overlapping one another in the axis-perpendicular direction of the solid rubber wall. | 2010-04-29 |
20100102496 | ROTARY BEARING, ROTARY TABLE DEVICE AND TABLE DIAMETER DETERMINING METHOD - A rotary table device includes a hollow motor drive source, a table rotated thereby, and a rotary bearing supporting the table. The rotary bearing is provided an outer race having an inner surface to which a rolling surface is formed, an inner race having an outer peripheral surface to which a rolling surface opposing to the rolling surface of the outer race is formed, and a plurality of rolling members disposed in a rolling passage formed by the rolling surface of the outer race and the rolling surface of the inner race, and a cooling medium passage (α, β) is formed so as to be adjacent to either one of the inner race and outer race constituting a rotational driving side. According to the structure mentioned above, a rotary bearing and a rotary table device capable of achieving suitable cooling effect can be provided. | 2010-04-29 |