15th week of 2011 patent applcation highlights part 5 |
Patent application number | Title | Published |
20110084196 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes an effective pixel region for outputting a signal according to light, and an optical black pixel region for outputting a reference signal, wherein, in the optical black pixel region, a plug is arranged in an insulating film, and a light shielding film is arranged above the plug and is connected to the plug, such that an upper surface of the plug and an upper surface of the insulating film form the same plane, and wherein, above or below the light shielding film, a titanium film of thickness 5 to 15 nm is arranged. | 2011-04-14 |
20110084197 | Solid-State Image Sensor - A pixel output line is provided for each of the pixels two-dimensionally arrayed in a pixel area. The pixel output lines are extended to a memory area, and a memory unit is connected to each of those lines. The memory unit includes a writing-side transistor, a reading-side transistor and a plurality of memory sections for holding signals for 104 image frames. A photocharge storage operation is simultaneously performed at all the pixels, and the thereby produced signals are outputted to the pixel output lines. In the memory unit, with the writing-side transistor in the ON state, the sampling transistor of a different memory section is sequentially turned on for each exposure cycle so as to sequentially hold a signal in the capacitor of each memory section. After a burst imaging operation is completed, all the pixel signals are sequentially read. Unlike CCDs, the present device does not simultaneously drive all gate loads, so that it can be driven at high speeds with low power consumption. Thus, the burst imaging can be performed at higher speeds than ever before. | 2011-04-14 |
20110084198 | INTERIOR REARVIEW MIRROR INFORMATION DISPLAY SYSTEM FOR A VEHICLE - An interior rearview mirror information display system for a vehicle includes an interior rearview mirror assembly including an electrochromic reflective element. A display device is disposed behind a transflective mirror reflector of the reflective element and includes a display screen backlit by a plurality of light emitting diodes supported by a circuit board disposed rearward of the fourth surface of the rear substrate. The light emitting diodes of the circuit board are disposed to the rear of the display screen to provide backlighting of the display screen when activated. Information displayed by the display device is viewable by a driver of the equipped vehicle. When the plurality of light emitting diodes is activated and the display device is displaying information, light emitted by the plurality of light emitting diodes passes through the display screen and through the transflective mirror reflector for viewing by the driver of the equipped vehicle. | 2011-04-14 |
20110084199 | OPTICAL SENSOR USING NANO-SPACER AND DETECTION METHOD USING THE SAME - An optical sensor includes: a nano-spacer a length of which is reversibly varied depending on an external stimuli; a first material body coupled to one side of the nano-spacer; a second material body coupled to the other side of the nano-spacer; and a detection unit detecting light emitted by an interaction between the first material body and the second material body. | 2011-04-14 |
20110084200 | Position Transmitter with Multi-Turn Position Acquisition - This invention relates to a position transmitter for the acquisition of the position of a shaft, rotatable about an axis of rotation, with a first optical sensor arrangement for the acquisition of the single-turn position of the shaft, and a second optical sensor arrangement for the acquisition of the multi-turn position of the shaft. | 2011-04-14 |
20110084201 | Position Transmitter with Multi-Turn Position Acquisition - This invention relates to a position transmitter for the acquisition of the position of a shaft, rotatable about an axis of rotation, comprising an optical sensor arrangement with a plurality of sensor elements, in which the plurality of sensor elements are provided for the acquisition of the single-turn position of the shaft, and whereby part of the plurality of sensor elements is provided for the acquisition, in particular for the gearless acquisition, of the multi-turn position of the shaft. | 2011-04-14 |
20110084202 | Portable Analytical System for On-Site Analysis of Fluids - A portable analytical system for the rapid on-site analysis of fluids, and a method for using this system at the well-site for the analysis of samples extracted from drilling fluids is described. The portable analytical solution may be deployed at the well-site and used to perform detailed real-time analysis of formation fluids and extracts of rock cuttings. The method described could be used during hydrocarbon exploration and production to determine whether the drill stem has passed through a hydrocarbon-bearing region, or rocks that are capable of functioning as an oil reservoir or that may have been a source rock, or that may have come into contact with oil, or that may contain oil at present. | 2011-04-14 |
20110084203 | METHOD AND APPARATUS FOR PYROLYSIS-INDUCED CLEAVAGE IN PEPTIDES AND PROTEINS - A method and apparatus for conducting the rapid pyrolysis of peptides, proteins, polymers, and biological materials. The method can be carried out at atmospheric pressures and takes only about 5 to 30 seconds. The samples are cleaved at the C-terminus of aspartic acid. The apparatus employs a probe on which the sample is heated and digested components analyzed. | 2011-04-14 |
20110084204 | METHOD FOR GENERATION AND USE OF ISOTOPIC PATTERNS IN MASS SPECTRAL DATA OF SIMPLE ORGANISMS - A method for identifying a biological analyte that is affected by a stressor is disclosed in which two substantially identical biological samples are provided, with a first sample being a control sample and a second sample being an experimental sample. The control sample is grown with a nutrient having an isotope of a first atom, whereas the experimental sample is grown with a nutrient having a second isotope of the first atom. The experimental sample is grown with a stressing agent and regimen. The samples are admixed, and the formed composite is mass spectroscopically assayed for analyte peaks. The ratio of first isotope to second isotope is determined for the peaks, as is a sample median isotopic ratio. The ratio for assayed analyte peaks is compared with the median ratio. An analyte whose isotopic ratio significantly deviates from the median ratio is an analyte affected by the stressing agent. | 2011-04-14 |
20110084205 | Collision Cell - A method of operating a gas-filled collision cell in a mass spectrometer is provided. The collision cell has a longitudinal axis. Ions are caused to enter the collision cell. A trapping field is generated within the collision cell so as to trap the ions within a trapping volume of the collision cell, the trapping volume being defined by the trapping field and extending along the longitudinal axis. Trapped ions are processed in the collision cell and a DC potential gradient is provided, using an electrode arrangement, resulting in a non-zero electric field at all points along the axial length of the trapping volume so as to cause processed ions to exit the collision cell. The electric field along the axial length of the trapping volume has a standard deviation that is no greater than its mean value. | 2011-04-14 |
20110084206 | Compact superconducting magnet configuration with active shielding having a shielding coil contributing to field formation - A superconducting magnet configuration ( | 2011-04-14 |
20110084207 | Charged Particle Beam System Having Multiple User-Selectable Operating Modes - A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled. | 2011-04-14 |
20110084208 | Photonic sensors, xerogel-based sensors and nanosensors - A photonic sensor system is provided. The system generally includes a beta emission source, optionally, a scintillation layer, and a luminophore-containing sensory layer. The system can be embodied in a particle. Also provided are photonic sensor strategies which are highly accurate and photonic sensors which are highly stable. | 2011-04-14 |
20110084209 | REPRODUCIBLE LATTICE STRAIN MEASUREMENT METHOD - Lattice strain is reproducibly measured using geometric phase analysis (GPA) of a high angle annular dark field mode scanning transmission electron microscope (HAADF-STEM). Errors caused by beam shift (also known as fly-back error) between scan lines are eliminated. | 2011-04-14 |
20110084210 | Process for producing a particularly strong scintillation material, a crystal obtained by said process and uses thereof - A large-volume scintillation crystal affording a high scintillation yield and having high mechanical strength is obtained by growing a crystal from a melt containing strontium iodide, barium iodide or a mixture thereof and by doping with an activator. To this end, the melt is enclosed in a closed volume. Before and/or during the growing, the melt is in diffusion-permitting connection, via the enclosed volume, with an oxygen getter which sets a constant oxygen potential in the closed volume and the melt. Such a scintillation crystal is suitable for detecting UV-, gamma-, beta-, alpha- and/or positron radiation. | 2011-04-14 |
20110084211 | DETECTOR-SHIFT TYPE COMBINED RADIATION THERAPY/PET APPARATUS - In beam monitoring for detecting annihilation radiations produced by radiation irradiation in radiation therapy for cancer which is performed by irradiating the affected area by X-rays, gamma rays, or particle beams, a detector-shift type combined radiation therapy/PET apparatus is provided with an open PET device that includes a plurality of shiftable multi-ring detector rings; and a radiation irradiation device that is capable of irradiation with a radiation beam through between the detector rings. The apparatus changes the positions of the detector rings, performs irradiation with the radiation beam through between the detector rings, and then performs radiation measurement. | 2011-04-14 |
20110084212 | Multi-layer photon counting electronic module - A multilayer electronic module for photon counting such as in the solar blind region of the ultraviolet electromagnetic spectrum is provided. | 2011-04-14 |
20110084213 | Organic Radiation Monitoring Device - A label assembly for the detection of high energy radiation, the assembly including at least one substrate layer having a first surface and a second surface opposite the first surface, at least one self-adhering layer disposed on said first surface of said substrate layer and at least one indicator for exposure to high energy radiation. | 2011-04-14 |
20110084214 | GAS CLUSTER ION BEAM PROCESSING METHOD FOR PREPARING AN ISOLATION LAYER IN NON-PLANAR GATE STRUCTURES - A gas cluster ion beam (GCIB) processing method for preparing an isolation layer in a non-planar gate structure is described. The method forms a non-planar gate structure on a substrate. Additionally, the GCIB processing method includes generating a GCIB formed from a material source for forming an isolation layer for the non-planar gate structure. Additionally yet, the GCIB processing method includes selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose to achieve a desired thickness of the isolation layer, accelerating the GCIB to achieve the beam energy, focusing the GCIB to achieve the beam focus, and irradiating at least a portion of the substrate with the accelerated GCIB according to the beam dose. The GCIB processing method forms the isolation layer at a base surface adjacent a base of the non-planar gate structure using the GCIB to achieve the desired thickness. | 2011-04-14 |
20110084215 | METHOD AND SYSTEM FOR TILTING A SUBSTRATE DURING GAS CLUSTER ION BEAM PROCESSING - A method and system for treating a non-planar structure is described. The method includes forming a non-planar structure on a substrate. Additionally, the method includes generating a gas cluster ion beam (GCIB) formed from a material source for treatment of the non-planar structure, tilting the substrate relative to the GCIB, and irradiating the non-planar structure with the GCIB. The system includes a substrate tilt actuator coupled to a substrate holder and configured to tilt the substrate holder relative to a GCIB. | 2011-04-14 |
20110084216 | METHOD FOR TREATING NON-PLANAR STRUCTURES USING GAS CLUSTER ION BEAM PROCESSING - A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane parallel with said substrate and one or more second surfaces lying substantially perpendicular to the first plane. Additionally, the method comprises directing a gas cluster ion beam (GCIB) formed from a material source toward the substrate with a direction of incidence, and orienting the substrate relative to the direction of incidence. The method further comprises treating the one or more second surfaces. | 2011-04-14 |
20110084217 | SUPERCONTINUUM LASER SOURCE FOR FULL-FIELD CONFOCAL MICROSCOPY, SPIM AND TIRF - A supercontinuum laser is used as the excitation source for full-field confocal, SPIM or TIRF imaging. A supercontinuum laser will allow the use of any wavelength desired for excitation without having to buy additional lasers. The wavelength can be easily selected using an acousto-optical device. Also disclosed is a means for driving an acousto-optical device such that an arbitrary wavelength window can be selected—this allows for the broader wavelength ranges that will give the increased power needed for full-field confocal, SPIM or TIRF imaging. | 2011-04-14 |
20110084218 | METHOD AND DEVICE FOR PARTICLE ANALYSIS USING THERMOPHORESIS - The present invention pertains to a device and method to measure thermo-optical, preferably thermophoretic, characteristics of particles in a solution. The method comprises the steps of: (a) providing a sample probe comprising marked particles in a solution; (b) providing a temperature control system for creating a temperature gradient within said sample probe by contact heating, electrical heating and/or cooling; (c) detecting the marked particles at a first time; (d) creating a temperature gradient within the sample probe by means of the temperature control system; (e) detecting the marked particles in the sample probe at a, preferably predetermined, second time and/or at a predetermined location within the temperature gradient, and (f) characterizing the particles based on said two detections. | 2011-04-14 |
20110084219 | METHOD AND APPARATUS OF PRETREATMENT OF AN ELECTRON GUN CHAMBER - A method of pre-treating an ultra high vacuum charged particle gun chamber by ion stimulated desorption is provided. The method includes generating a plasma for providing a plasma ion source, and applying a negative potential to at least one surface in the gun chamber, wherein the negative potential is adapted for extracting an ion flux from the plasma ion source to the at least one surface for desorbing contamination particles from the at least one surface by the ion flux impinging on the at least one surface. | 2011-04-14 |
20110084220 | ENHANCED INTEGRITY PROJECTION LENS ASSEMBLY - The present invention relates to a projection leis assembly module for directing a multitude of charged particle beamlets onto an image plane located in a downstream direction, and a method for assembling such a projection lens assembly. In particular the present invention discloses a modular projection lens assembly with enhanced structural integrity and/or increased placement precision of its most downstream electrode. | 2011-04-14 |
20110084221 | ELECTRON BEAM IRRADIATION APPARATUS FOR OPEN-MOUTHED CONTAINERS - The apparatus has a rotating body | 2011-04-14 |
20110084222 | VALVE ELEMENT FOR A CONDENSATE TRAP - There is provided a valve element for a condensate trap comprising an expansion chamber in the form of a metallic bellows having a variable axial length and having first and second ends sealed with first and second end caps respectively. A valve closure member is provided on the second end cap and is arranged to cooperate with a valve seat. A first guide member is coupled to the first end cap and axially extends into the bellows and a second guide member is coupled to the second end cap, axially extends into the bellows and cooperates with the first guide member. This allows relative axial movement between the first and second end caps but restricts relative radial movement between the first and second end caps. This helps to ensure that the valve closure member properly seats on the valve seal. | 2011-04-14 |
20110084223 | VALVE ACTUATOR - The present invention relates to a valve actuator comprising a support member for supporting a rotatable positioning element operatively connected to a valve rod. The valve actuator further comprises a track follower adapted to follow at least part of a track provided in the positioning element. The track follower is biased against at least part of the track by a resilient member. The rotatable positioning element comprises a curved outer portion arranged in an associated bearing formed in the support member. | 2011-04-14 |
20110084224 | ELECTRONIC EXPANSION VALVE - The present invention provides an electronic expansion valve, comprising a leading screw, a valve needle and a valve needle sleeve. It further comprises: a washer provided in an annular groove, which is provided at the lower end of the leading screw in the circumferential direction, and a thickness of the washer is less than a width of the annular groove; the valve needle sleeve abuts against the upper surface of the washer and is fixedly connected with the valve needle; and a spring is provided between the washer and the valve needle. By arranging the washer in the annular groove provided at the lower end of the leading screw in the circumferential direction, with the thickness of the washer being less than the width of the annular groove, and by arranging the spring between the valve needle and the washer, the washer is enabled to rotate around the annular groove in the circumferential direction and move up and down in the annular groove, improving the reliability of the electronic expansion valve. | 2011-04-14 |
20110084225 | Valve Made From Two Materials and Writing Utensil With Retractable Tip Incorporating Same - A valve includes a first valve portion made from a first material, the first valve portion including a body, a door, and an inner hinge pivotably connecting the body to the door, the body including a first opening at a first end and a second opening at a second end opposite the first end, and a circumferential recess disposed in the second end, wherein the inner hinge pivotably connects the door to the body at the first end and a second valve portion made from a second material, the second valve portion including an inner seal disposed in the circumferential recess, the inner seal including a circumferential ridge extending inwardly, the second valve portion further including a door seal disposed on the first end of the body. | 2011-04-14 |
20110084226 | FULL STRAIGHT-SHAFT SEALING BUTTERFLY VALVE - A straight shaft sealing valve assembly includes a valve body, a shaft, a valve element, and a seal element. The valve body has an inner surface that defines a flow channel. The shaft is rotationally mounted on the valve body and extends across the flow channel. The shaft includes a first seal opening and a second seal opening. The first and second seal openings are spaced apart from each other and extend through the shaft. The valve element is coupled to the shaft and is rotatable therewith, and has an outer periphery. The seal element is coupled to the valve element, extends from the outer periphery, and extends through the first and second seal openings. | 2011-04-14 |
20110084227 | FLUOROPOLYMER COMPOSITIONS AND TREATED SUBSTRATES - A composition for imparting surface properties to substrates comprising a polymer of at least one polyurethane having at least one urea linkage prepared by:
| 2011-04-14 |
20110084228 | HYDROFLUOROOLEFIN COMPOSITIONS - The present invention relates to compositions containing hydrofluoroolefins and to the uses thereof as heat transfer fluids, blowing agents, solvents and aerosols. More particularly, the invention relates to compositions having: 2 to 55% by weight, of 2,3,3,3-tetrafluoropropene, 2 to 55% by weight of HFC-152 | 2011-04-14 |
20110084229 | POWDER MATERIAL, ELECTRODE STRUCTURE USING THE POWDER MATERIAL, AND ENERGY STORAGE DEVICE HAVING THE ELECTRODE STRUCTURE - A powder material which can electrochemically store and release lithium ions rapidly in a large amount is provided. In addition, an electrode structure for an energy storage device which can provide a high energy density and a high power density and has a long life, and an energy storage device using the electrode structure are provided. In a powder material which can electrochemically store and release lithium ions, the surface of particles of one of silicon metal and tin metal and an alloy of any thereof is coated by an oxide including a transition metal element selected from the group consisting of W, Ti, Mo, Nb, and V as a main component. The electrode structure includes the powder material. The battery device includes a negative electrode having the electrode structure, a lithium ion conductor, and a positive electrode, and utilizes an oxidation reaction of lithium and a reduction reaction of lithium ion. | 2011-04-14 |
20110084230 | Process for Synthesizing Organoelemental Compounds - The present application discloses a process for preparing a compound of the general formula R | 2011-04-14 |
20110084231 | Method and process of producing short chain fatty acids from waste stream containing phenolic lignin model compounds by controlled photocatalytic oxidation with titanium dioxide nanocatalyst in the presence of ultraviolet radiation - A method of producing short chain carbon compounds from effluents that are rich in lignin-model compounds. The method is characterized by controlled photocatalytic degradation of lignin model compounds so as to produce short chain carbon compounds. The present invention provides converting recalcitrant and toxic organic compounds into chemicals which are of commercial value. | 2011-04-14 |
20110084232 | ILLUMINATION SYSTEM COMPRISING A RADIATION SOURCE AND A FLUORESCENT MATERIAL - The invention concerns an illumination system for generation of colored, especially amber or red light, comprising a radiation source and a fluorescent material comprising at least one phosphor capable of absorbing a part of light emitted by the radiation source and emitting light of wavelength different from that of the absorbed light; wherein said at least one phosphor is a amber to red emitting a rare earth metal-activated oxonitridoalumosilicate of general formula (Ca | 2011-04-14 |
20110084233 | Scintillation materials in single crystal or polycrystalline form with improved properties, especially light yield and strain birefringence - The scintillation material is a compound of the general formula LnX | 2011-04-14 |
20110084234 | Scintillation materials of low oxygen content and process for producing same - The scintillation material has a maximum oxygen content of 2,500 ppm and is a compound of formula LnX | 2011-04-14 |
20110084235 | PHOSPHOR AND MANUFACTURING METHOD THEREFORE, AND LIGHT EMISSION DEVICE USING THE PHOSPHOR - To provide a phosphor having an emission spectrum with a broad peak in a range from green color to yellow color, having a broad and flat excitation band capable of using lights of broad range from near ultraviolet/ultraviolet to blue lights as excitation lights, and having excellent emission efficiency and luminance. The problem is solved by providing the phosphor expressed by a general composition formula MmAaBbOoNn:Z (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as the activator.), satisfying 4.0<(a+b)/m<7.0, a/m≧0.5, b/a>2.5, n>o, n=2/3m+a+4/3b−2/3o, and having an emission spectrum with a peak wavelength of 500 nm to 650 nm when excited by light in a wavelength range from 300 nm to 500 nm. | 2011-04-14 |
20110084236 | Steam Reforming Process With Improved Flue Gas Flow - A process and an installation for producing a synthesis gas by catalytic steam reforming of a charge of hydrocarbons is provided. | 2011-04-14 |
20110084237 | PROTON CONDUCTING MEMBRANES FOR HYDROGEN PRODUCTION AND SEPARATION - In one embodiment, a membrane of proton-electron conducting ceramics that is useful for the conversion of a hydrocarbon and steam to hydrogen has a porous support of M′-Sr | 2011-04-14 |
20110084238 | PROCESS FOR PREPARING LITHIUM VANADIUM OXIDES AND THEIR USE AS CATHODE MATERIAL - The present invention relates to a process for preparing lithium vanadium oxides and also a process for producing mixtures of a lithium vanadium oxide and at least one electrically conductive material. Furthermore, the invention relates to the use of lithium vanadium oxides or of mixtures of a lithium vanadium oxide and at least one electrically conductive material for producing cathodes for batteries and in electrochemical cells. In addition, the invention relates to cathodes which comprise a lithium vanadium oxide or a mixture of a lithium vanadium oxide and at least one electrically conductive material. | 2011-04-14 |
20110084239 | Transparent Conducting Oxides and Production Thereof - Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality. | 2011-04-14 |
20110084240 | Variable Resistance Materials with Superior Data Retention Characteristics - Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures. | 2011-04-14 |
20110084241 | Method and apparatus for duplication of surface coating composition - A method is provided to duplicate a custom coating composition. A laminate strip is die cut to form a bi-layer transparent labels on a backing strip. Each label includes a backing of release adhesive. The transparent labels are applied to cover indicia on a container of a custom composition coating. | 2011-04-14 |
20110084242 | PROCESS FOR SOLIDIFICATION OF PHOSPHORIC ESTER-BASED FLAME RETARDANTS - The present invention provides a process of solidifying a phosphoric ester-based flame retardant in which high-level purification is not required and stress load is not employed. | 2011-04-14 |
20110084243 | Chemical light producing formulations and devices containing branched oxalate esters - Chemical light producing systems and the chemiluminescent formulations contained therein are taught which exhibit reduced hydrolysis and thereby are characterized by an inherently long shelf-life and commercial viability. By replacing the typical oxalate ester, e.g. (bis{3,4,6-trichloro-2-[(pentoxy)carbonyl]phenyl}oxalate) with a branched chain oxalic acid ester represented by the general formula: | 2011-04-14 |
20110084244 | CABLE INSTALLATION USING OPTICAL DETECTION - A device for use with a conduit having a first conduit end and a conduit second end, into which conduit a cable can be installed using a flow of air into the first conduit end, the device being suitable for confirming that the flow of air is exiting the second conduit end, the device including a housing, means to enable connection of the device to the second conduit end, a light source, a detector arranged to detect a presence or absence of a light signal, and a light shield, wherein in use, the flow of air entering the device causes the light shield and at least one of the light source or the detector, to move to and to stay at a position relative to the other, permitting the detector to detect detections including one or more of a presence or absence of the light signal, an intensity level of the light signal, a change in the presence or absence of the light signal, or a change in the intensity level of the light signal. | 2011-04-14 |
20110084245 | LIFTING SYSTEM - The invention provides a lifting system that decreases the amount of energy used while lifting luggage from the ground in a variety of locations. According to the invention, a lifting system operates on a regenerative braking mechanism that provides for recharging the battery of the lifting system using energy created from rotational force generated by the lowering of an arm of the lifting system. | 2011-04-14 |
20110084246 | Metal Roadway Safety Barrier - Metal roadway safety barrier formed by a series of horizontal rails, girders or fences ( | 2011-04-14 |
20110084247 | Self-Aligned Bipolar Junction Transistors - A plurality of bipolar transistors are formed by forming a common conduction region, a plurality of control regions extending each in an own active areas on the common conduction region, a plurality of silicide protection strips, and at least one control contact region. Silicide regions are formed on the second conduction regions and the control contact region. The second conduction regions may be formed by selectively implanting a first conductivity type dopant areas on a first side of selected silicide protection strips. The control contact region is formed by selectively implanting an opposite conductivity type dopant on a second side of the selected silicide protection strips. | 2011-04-14 |
20110084248 | CROSS POINT MEMORY ARRAY DEVICES - Cross point memory arrays with CBRAM and RRAM stacks are presented. A cross point memory array includes a first group of substantially parallel conductive lines and a second group of substantially parallel conductive lines, oriented substantially perpendicular to the first group of substantially parallel conductive lines. An array of memory stack is located at the intersections of the first group of substantially parallel conductive lines and the second group of substantially parallel conductive lines, wherein each memory stack comprises a conductive bridge memory element in series with a resistive-switching memory element. | 2011-04-14 |
20110084249 | LIGHT-EMITTING DEVICE USING CLAD LAYER CONSISTING OF ASYMMETRICAL UNITS - The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into the active layer is arbitrarily controlled through the clad layer, so that the internal quantum efficiency can be improved. The light-emitting device using the clad layer consisting of the asymmetric units according to the present invention is characterized in that the clad layer is provided on at least one of the upper and lower portions of the active layer and consists of one or plural units, wherein the unit has a structure in which the first to n | 2011-04-14 |
20110084250 | NANOPARTICLE COMPLEX, METHOD OF MANUFACTURING THE SAME, AND DEVICE INCLUDING THE NANOPARTICLE COMPLEX - A nanoparticle complex, including a semiconductor nanocrystal; and a metal complex ligand on the surface of the semiconductor nanocrystal. The nanoparticle complex may further include a polymer shell contacting the metal complex ligand. | 2011-04-14 |
20110084251 | ATOMISTIC QUANTUM DOT - A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed therefrom. | 2011-04-14 |
20110084252 | ELECTRONIC DEVICE - Electronic devices, such as organic thin film transistors, with improved mobility are disclosed. The semiconducting layer comprises layers or striations of an organic semiconductor and graphene, including alternating layers/striations of such materials. The organic semiconductor and graphene layers interact well together because both materials form lamellar sheets. The presence of graphene enhances mobility by correcting molecular packing defects in the organic semiconductor layers, and the conductivity of graphene can be controlled. Finally, both materials are flexible, allowing for flexible semiconductor layers and transistors. | 2011-04-14 |
20110084253 | ORGANIC LIGHT EMITTING DIODE LIGHTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is an organic light emitting diode lighting apparatus and a method for manufacturing the same. The organic light emitting diode lighting apparatus may include a transparent substrate main body having a plurality of groove lines formed thereon, an auxiliary electrode formed in at least one of the plurality of groove lines, a first electrode formed on the substrate main body so as to contact the auxiliary electrode, an organic emission layer formed on the first electrode and a second electrode formed on the organic emission layer. | 2011-04-14 |
20110084254 | POLYMER AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A polymer and an organic light-emitting device including the polymer. An example of the polymer is | 2011-04-14 |
20110084255 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a first electrode and a first layer, wherein the first electrode includes a first element-containing zinc oxide layer and the first layer includes a cyano group-containing compound. | 2011-04-14 |
20110084256 | CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE INCLUDING ORGANIC LAYER CONTAINING THE CONDENSED-CYCLIC COMPOUND - A condensed-cyclic compound represented by Formula 1 below and an organic light emitting diode including the condensed-cyclic compound: | 2011-04-14 |
20110084257 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display includes a substrate, a first conductive layer disposed on the substrate, a second conductive layer formed on the first conductive layer, a third conductive layer formed on the first conductive layer or the second conductive layer. A first electrode disposed on the substrate at a display area, the first electrode including at least the first conductive layer, the second conductive layer, and the third conductive layer. An organic emissive layer is disposed on the first electrode. A second electrode is formed on the organic emissive layer. A pad is disposed on the substrate at a pad area neighboring the display area. The pad has the first conductive layer and the third conductive layer surrounding the lateral side of the first conductive layer. | 2011-04-14 |
20110084258 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including a substrate; a first electrode on the substrate; a second electrode; an organic layer between the first electrode and the second electrode, the organic layer including an emission layer; and a first layer including a cyano group-containing compound, the first layer being between the first electrode and the emission layer, wherein the first electrode includes an Al-based reflective layer and a transparent conductive layer sequentially stacked on the substrate, the Al-based reflective layer including a first element and nickel (Ni), and the first element includes at least one of lanthanum (La), cerium (Ce), praseodymium (Pr), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu). | 2011-04-14 |
20110084259 | ORGANIC LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - An OLED including an electron transport layer having multi-layered structure and a method of manufacturing the same, the method including simultaneously reciprocating first and second deposition sources that include different deposition materials, across a substrate. | 2011-04-14 |
20110084260 | THIN FILM TRANSISTOR ARRAY PANEL USING ORGANIC SEMICONDUCTOR AND A METHOD FOR MANUFACTURING THE SAME - The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display. | 2011-04-14 |
20110084261 | ORGANIC THIN-FILM TRANSISTOR - A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin film layer. | 2011-04-14 |
20110084262 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVE THE THIN FILM TRANSISTOR - A thin film transistor for an organic light emitting display device is disclosed. In one embodiment, the thin film transistor includes: a substrate, an active layer formed over the substrate, wherein the active layer is formed of an oxide semiconductor, a gate insulating layer formed over the substrate and the active layer, and source and drain electrodes formed on the gate insulating layer and electrically connected to the active layer. The transistor may further include a gate electrode formed on the gate insulating layer and formed between the source and drain electrodes, wherein the gate electrode is spaced apart from the source electrode so as to define a first offset region therebetween, and wherein the gate electrode is spaced apart from the drain electrode so as to define a second offset region therebetween. The transistor may further include a passivation layer formed on i) the gate insulating layer, ii) the source and drain electrodes and iii) the gate electrode; and at least one auxiliary gate electrode formed on the passivation layer, wherein at least a portion of the auxiliary gate electrode is located directly above the first and second offest regions. | 2011-04-14 |
20110084263 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer. | 2011-04-14 |
20110084264 | OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE - An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In | 2011-04-14 |
20110084265 | LIGHT-EMITTING DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other. | 2011-04-14 |
20110084266 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE - In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced. | 2011-04-14 |
20110084267 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased. | 2011-04-14 |
20110084268 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed. | 2011-04-14 |
20110084269 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to reduce contact resistance between an oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer in a thin film transistor including the oxide semiconductor layer. The source and drain electrode layers have a stacked structure of two or more layers. In this stack of layers, a layer in contact with the oxide semiconductor layer is a thin indium layer or a thin indium-alloy layer. Note that the oxide semiconductor layer contains indium. A second layer or second and any of subsequent layers in the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 2011-04-14 |
20110084270 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to provide a thin film transistor including an oxide semiconductor layer, in which a material used for the oxide semiconductor layer and a material used for source and drain electrode layers are prevented from reacting with each other. The source and drain electrode layers provided over a substrate having an insulating surface have a stacked structure of two or more layers. In the stack of layers, a layer which is in contact with an oxide semiconductor layer is a metal layer including a metal element other than a metal element included in the oxide semiconductor layer. An element selected from Sn, Sb, Se, Te, Pd, Ag, Ni, and Cu; an alloy containing any of these elements as a component; an alloy containing any of these elements in combination; or the like is used for a material of the metal layer used. | 2011-04-14 |
20110084271 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer. | 2011-04-14 |
20110084272 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode. | 2011-04-14 |
20110084273 | SEMICONDUCTOR DEVICE - One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours. | 2011-04-14 |
20110084274 | METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER - Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer. | 2011-04-14 |
20110084275 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 2011-04-14 |
20110084276 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process. | 2011-04-14 |
20110084277 | SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD - A semiconductor memory device has a plurality of word line provided on a semiconductor region, extending in a row direction, a plurality of bit lines provided in the semiconductor region, extending in a column direction, and a plurality of memory elements provided at intersections between the plurality of word lines and the plurality of bit lines. Each word line provides a first gate electrode in the corresponding memory element. A lower portion of a side surface of each word line in a direction parallel to an extending direction of the word line is perpendicular to a main surface of the semiconductor region. An upper portion of the side surface is inclined so that a width thereof becomes smaller toward a top thereof. | 2011-04-14 |
20110084278 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME - The present invention relates to a thin-film transistor in a liquid crystal display device and a method of fabricating the same, and the thin-film transistor may be configured by including a first gate electrode formed on an insulating substrate; a first gate insulation film formed on the insulating substrate including the first gate electrode; an active layer formed on the first gate insulation film; source/drain electrodes formed on the active layer and arranged at both sides of the first gate electrode; a second gate insulation film formed on the active layer and the first gate insulation film including the source/drain electrodes and provided with a contact hole for exposing part of the drain electrode; a second gate electrode overlapped with the first gate electrode on the second gate insulation film; and a pixel electrode electrically connected to the drain electrode through the contact hole. | 2011-04-14 |
20110084279 | Organic light emitting diode display - An organic light emitting diode display that includes a first electrode arranged on a substrate, an organic emission layer arranged on the first electrode and a second electrode arranged on the organic emission layer, the first electrode includes a first layer, a second layer and a third layer stacked sequentially on the organic emission layer, the second layer has a lower work function than the third. Here, the second layer has a higher work function than that of the third layer. | 2011-04-14 |
20110084280 | THIN FILM TRANSISTOR SUBSTRATE, THIN FILM TRANSISTOR TYPE LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE - There are provided: a thin film transistor substrate provided with an amorphous transparent conductive film in which residue due to etching hardly occurs; a liquid crystal display device which utilizes the thin film transistor substrate; and a method for manufacturing a thin film transistor substrate in which the thin film transistor substrate can be efficiently obtained. | 2011-04-14 |
20110084281 | LIGHT EMITTING DEVICE AND ELECTRONIC EQUIPMENT - A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are connected such that the drain current of the first transistor is kept in proportion to the drain current of the second transistor irrespective of the load resistance value. The drain current of the first transistor is controlled by a driving circuit in accordance with a video signal and the drain current of the second transistor is caused to flow into an OLED, thereby controlling the OLED drive current and the luminance of the OLED. | 2011-04-14 |
20110084282 | LIQUID CRYSTAL DISPLAY DEVICE HAVING LIGHT BLOCKING LINE DISPOSED ON SAME LAYER AS GATE LINE - Active matrix display devices having improved opening and contrast ratios utilize light blocking lines to improve display contrast ratios yet position the light blocking lines on the same level of metallization as the gate lines to thereby limit parasitic capacitive coupling between the data lines and the pixel electrodes. The light blocking lines are also positioned on only one side of the data lines so that improvements in the display's opening ratio can also be achieved. The light blocking lines are preferably patterned so that no overlap occurs between a display's data lines and the light blocking lines. The elimination of overlap reduces the step height in the display's pixel electrodes and thereby reduces the extent of disclination of the liquid crystal molecules in the liquid crystal material extending opposite the pixel electrodes. The light blocking lines are also preferably patterned beneath the display's data lines so that parasitic capacitive coupling between the data lines and the pixel electrodes is reduced. The light blocking lines are also preferably formed with beveled edges so that the step height in the display's pixel electrodes can be reduced even further. | 2011-04-14 |
20110084283 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. Later, the spacer and the amorphous semiconductor patterns are crystallized. Subsequently, the protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. Then, a carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer. | 2011-04-14 |
20110084284 | Transistors with Semiconductor Interconnection Layers and Semiconductor Channel Layers of Different Semiconductor Materials - A transistor may include a semiconductor drift layer of a first semiconductor material and a semiconductor channel layer on the semiconductor drift layer. The semiconductor channel layer may include a second semiconductor material different than the first semiconductor material. A semiconductor interconnection layer may be electrically coupled between the semiconductor drift layer and the semiconductor channel layer, and the semiconductor interconnection layer may include a third semiconductor material different than the first and second semiconductor materials. In addition, a control electrode may be provided on the semiconductor channel layer. | 2011-04-14 |
20110084285 | BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE - The present invention is a base material for growing a single crystal diamond comprising: at least a single crystal SiC substrate; and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. | 2011-04-14 |
20110084286 | DONOR SUBSTRATE AND METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE USING THE SAME - A donor substrate for laser induced thermal imaging and a method of fabricating an organic light emitting diode (OLED) using the donor substrate are disclosed. In one embodiment, the donor substrate includes a base film, a light-to-heat conversion layer formed on the base film, a buffer layer formed on the light-to-heat conversion layer, and a transfer layer formed on the buffer layer. The buffer layer is formed of magnesium (Mg), an Mg alloy, or magnesium oxide. In the donor substrate for laser induced thermal imaging, the buffer layer is formed between the interlayer and the transfer layer or between the light-to-heat conversion layer and the transfer layer, so that surface characteristics between the donor substrate and the transfer layer can be improved. | 2011-04-14 |
20110084287 | Organic light emitting diode display and method for manufacturing the same - An organic light emitting diode display includes a display substrate including organic light emitting diodes and a pixel defining layer having openings for defining respective light emitting regions of the organic light emitting diodes, an encapsulation substrate disposed to face the display substrate, a sealant disposed along the edge of the encapsulation substrate and bonding and sealing the display substrate and the encapsulation substrate together, and a filling material for filling the space between the display substrate and the encapsulation substrate. The pixel defining layer is divided into a plurality of deposit regions having a relatively small height and that are uniformly distributed, and a diffusion region surrounding the plurality of deposit regions and having a larger height than that of the plurality of deposit regions. | 2011-04-14 |
20110084288 | Organic light emitting diode display and method of manufacturing the same - An organic light emitting diode (OLED) display includes a substrate, a first electrode on the substrate, an emission layer on the first electrode, and a second electrode on the emission layer, the second electrode including a transflective conductive layer and a conductive oxide layer. | 2011-04-14 |
20110084289 | ACTIVE DEVICE ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF - An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of active devices, a first passivation layer, a transparent pad layer, a plurality of color filter patterns, a second passivation layer, a plurality of pixel electrodes, and a black matrix layer is provided. Each of the active devices is electrically connected to one of the scan lines and one of the data lines, respectively. The transparent pad layer having a plurality of openings for accommodating the color filter patterns is disposed on the first passivation layer located above the scan lines and the data lines. The first passivation layer, the color filter patterns and the second passivation layer have a plurality of contact windows therein. The black matrix layer is disposed above the transparent pad layer to cover a portion of the pixel electrodes. | 2011-04-14 |
20110084290 | ORGANIC EL DISPLAY AND METHOD FOR MANUFACTURING SAME - An object of this invention is to provide a top-emission type organic EL display in which filling defects of a resin filler material are alleviated during bonding of an organic EL emission panel and a color conversion filter panel with the resin filler material, as well as to provide a method for manufacturing such an organic EL display. An organic EL display of this invention is characterized in having stripe-shaped barrier walls for inkjet application placed on a color conversion filter panel, and a filler material guide wall placed between the length-direction end portions of the barrier walls for inkjet application and a peripheral seal member. | 2011-04-14 |
20110084291 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a substrate main body, a plurality of organic light emitting diodes formed on the substrate main body, and a differential capping layer covering the plurality of organic light emitting diodes, the differential capping layer having a plurality of thicknesses. The differential capping layer has first regions with a thickness of 90 nm to 120 nm, and second regions with a thickness smaller than the thickness of the first regions. | 2011-04-14 |
20110084292 | ARRAYS OF LIGHT EMITTING DEVICES - Arrays of light-emitting devices, and related components, processes, systems and methods are disclosed. | 2011-04-14 |
20110084293 | MULTI-GRAIN LUMINESCENT CERAMICS FOR LIGHT EMITTING DEVICES - A ceramic body is disposed in a path of light emitted by a light source. The light source may include a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. The ceramic body includes a plurality of first grains configured to absorb light emitted by the light source and emit light of a different wavelength, and a plurality of second grains. For example, the first grains may be grains of luminescent material and the second grains may be grains of a luminescent material host matrix without activating dopant. | 2011-04-14 |
20110084294 | HIGH VOLTAGE WIRE BOND FREE LEDS - An LED chip and method of fabricating the same is disclosed that comprises a plurality of sub-LEDs, said sub-LEDs interconnected such that the voltage necessary to drive said sub-LEDs is dependent on the number of said interconnected sub-LEDs and the junction voltage of said sub-LEDs. Each of said interconnected sub-LEDs comprising an n-type semiconductor layer, a p-type semiconductor layer, and an active or quantum well region interposed between the n-type and p-type layers. The monolithic LED chip further comprising a p-electrode having a lead that is accessible from a point on a surface opposite of a primary emission surface of the monolithic LED chip, the p-electrode electrically connected to the p-type layer, and an n-electrode having a lead that is accessible from a point on the surface opposite of the primary emission surface, the n-electrode electrically connected to the n-type layer. These sub-LEDs interconnected by at least a metallization layer on the n-type and p-type layers, which is insulated so that it does not short the sub-LEDs. Further, the LED chip is capable of being electrically coupled for operation without wire bonds. | 2011-04-14 |
20110084295 | Light Emitting Device - A light emitting device includes a light emitting element, a base, and a transparent layer. The base has an upper side portion including a first portion and a second portion. The first portion includes a mounting region of the light emitting element, and has a first porosity. The second portion surrounds the first portion, includes a plurality of transparent particles, and has a second porosity larger than the first porosity. The light transmitting layer encapsulates the light emitting element, and is attached to the first portion in a state where the transparent layer is apart from the second portion. | 2011-04-14 |