13th week of 2012 patent applcation highlights part 14 |
Patent application number | Title | Published |
20120074328 | RADIATION IMAGING APPARATUS, PROCESSING METHOD THEREFOR, AND RADIATION IMAGING SYSTEM - An apparatus includes an imaging unit configured to perform imaging by using a plurality of image capture elements for accumulating electric charges, a storage unit configured to store an offset correction image, a correction image generation unit configured, when capturing a radiation image through radiant-ray irradiation, to combine the offset correction image with an image captured by using a part of the plurality of image capture elements through the imaging unit without radiant-ray irradiation to update the offset correction image, and a correction processing unit configured to correct the captured radiation image, based on the offset correction image. | 2012-03-29 |
20120074329 | DIGITAL X-RAY DETECTOR WITH INCREASED DYNAMIC RANGE - In one embodiment, a digital X-ray detector is provided with a plurality of pixel regions. Each pixel region includes a first photodiode having a first area and a second photodiode having a second area equal to or smaller than the first area. The digital X-ray detector also includes a shielding structure that overlies the first and second photodiodes of each pixel region with the shielding structure shielding proportionally less of the first photodiode than of the second photodiode to provide the first photodiode with a first sensitivity and the second photodiode with a second sensitivity lower than the first sensitivity. | 2012-03-29 |
20120074330 | Device and Method for Determining Activity of Radiopharmaceutical Material - A detector system measures radioactive material. A fluid path receives at least one aliquot of radiopharmaceutical. The fluid path locates the aliquot within a positioner formed with a concave configuration. A detector is located at an axial distance from the concave surface and determines the level of radioactivity of the aliquot. Alternatively, the fluid path may be less concave and a variable attenuator may be placed between the fluid path and detector. The variable attenuator may have a concavity that is based on the concavity of the fluid path so that the detector's ability to read the radioactivity is optimized. A method for forming an aliquot of radiopharmaceutical in a concave fluid passage. Positioning a detector located a distance from the concave surface to optimize reading spectral energy of the aliquot and activity is determining activity regardless of the position of the aliquot in the passage. | 2012-03-29 |
20120074331 | ELECTRONIC CASSETTE FOR RADIOGRAPHIC IMAGING - An electronic cassette for radiographic imaging has an enclosure, an imaging detection panel disposed in the enclosure and configured to convert an amount of radiation into an electric signal, a circuit unit disposed in the enclosure and configured to read an electric signal from the imaging detection panel by supplying a driving signal to the imaging detection panel, and a holding base disposed in the enclosure and configured to support the imaging detection panel. The holding base supports the imaging detection panel on a first surface as a radiation incident side and supports the circuit unit on a second surface on an opposite side to the first surface. The holding base includes a carbon fiber laminated plate having a metal layer inserted in lamination layer, and the metal layer is electrically connected to ground of the circuit unit. | 2012-03-29 |
20120074332 | RADIOGRAPHIC IMAGE DETECTOR - A flat panel detector (FPD) includes an imaging panel having pixels arranged in a matrix, a gate driver for turning thin film transistors (TFTs) of the pixels ON and OFF, a radiation detecting section for detecting the start of x-ray radiation from the x-ray source, and a controller. The controller controls the gate driver to turn the TFTs ON periodically to reset dark charges of the pixels. Before starting a charge accumulating operation for accumulating signal charges for imaging, the controller controls the gate driver to turn the TFTs OFF so that the radiation detecting section may detect the start of x-ray radiation on the basis of charge leaks from the pixels. When the start of x-ray radiation is detected, the controller starts the charge accumulating operation while keeping the TFTs in the OFF condition. Thereafter, the TFTs are turned ON to read out the accumulated signal charges. | 2012-03-29 |
20120074333 | X-ray Detector for Electron Microscope - Multiple detectors arranged in a ring within a specimen chamber provide a large solid angle of collection. The detectors preferably include a shutter and a cold shield that reduce ice formation on the detector. By providing detectors surrounding the sample, a large solid angle is provided for improved detection and x-rays are detected regardless of the direction of sample tilt. | 2012-03-29 |
20120074334 | Sterilization of household and other article - An apparatus for sterilizing includes receptacle having a base and left and right end surfaces; a cover for closing the apparatus, the cover having an outer surface, an inner surface and left and right end surfaces; a first UV light source positioned on the inner surface of the cover; a second UV light source positioned within the receptacle; and at least one article-receiving panel positioned over the second light source of the base of the receptacle. | 2012-03-29 |
20120074335 | METHODS AND APPARATUS FOR STERILIZATION OF AIR AND OBJECTS - A portable air sterilization apparatus includes a portable chamber forming an interior volume, a portable source for producing a single beam of collimated light energy, and a rotating beam redirector. The portable chamber includes a first end for introducing air into the chamber, a second end for permitting air to exit from the chamber, a transparent orifice through which a single beam of collimated light energy can be introduced into the interior volume of the chamber; and at least one reflective wall. The rotating beam redirector is adapted to rotate through a complete revolution about a rotational axis and to redirect the single beam of collimated light energy within the chamber during said revolution. | 2012-03-29 |
20120074336 | LIGHT-DRIVEN ROTARY MOLECULAR MOTORS - Compounds of Formula ( | 2012-03-29 |
20120074337 | CELLULOSIC AND LIGNOCELLULOSIC STRUCTURAL MATERIALS AND METHODS AND SYSTEMS FOR MANUFACTURING SUCH MATERIALS - Methods of treating wood and wood products include irradiating untreated wood having a first molecular weight with ionizing radiation to cause an increase in the molecular weight of a cellulosic component of the wood to a second, relatively higher molecular weight. | 2012-03-29 |
20120074338 | ILLUMINATION ARRANGEMENT FOR DATA READERS - Light sources are contained in a data reader housing that also contains an imager. In one embodiment, one light source includes a number of LEDs placed in a number of hollow reflectors located toward the rear of a data scanner, where the hollow reflectors have substantially flat reflective surfaces to project light through a window and into a read volume. Other embodiments include additional light sources located proximate sidewalls of the data scanner and also include a number of LEDs placed in hollow reflectors to project light through the window and into the read volume. In other embodiments, additional LEDs are included outside the hollow reflectors to project light through the window and into a different portion of the read volume than the LEDs located in the hollow reflectors. | 2012-03-29 |
20120074339 | REGULATING VALVE DEVICE - [Problem] To provide a regulating valve device having a valve element opened or closed by a working fluid. | 2012-03-29 |
20120074340 | HANDLE FOR GAS TANK VALVE - A device for operating a valve of a compressed-gas tank may include an engagement collar and operating handles attached to the collar. Notches may extend through a wall of the collar. The notches may be configured to engage with handle projections of the valve of the tank. | 2012-03-29 |
20120074341 | PASSIVE VALVE FOR MULTIVALVE DEVICES AND A MULTIVALVE DEVICE, IN PARTICULAR HAVING SUCH A PASSIVE VALVE - The invention relates to a passive valve for multi-valve devices for sealing a container or a line. According to one aspect of the invention, the passive valve is free of bearing supports which protrude in a positive sense out of the passive valve. The invention also relates to a multi-valve device for contamination-free connection of two containers or two lines with partial valves that can be rotated about a single axis. According to this aspect of the invention, at least three partial valves, which are arranged essentially parallel to one another and can be put under tension so they can be sealed with respect to their surroundings, can be rotated about the single shared axis. | 2012-03-29 |
20120074342 | COATINGS, THEIR PRODUCTION AND USE - Disclosed herein are agglomerate blends suitable for application to a surface of a substrate by thermal spray, thereby to produce coatings, typically nanostructured coatings, that exhibit desirable properties such as erosion, abrasion, or corrosion resistance. Such coatings have many useful applications, including but not limited to an enhancement of valve reliability and durability. For example, the nanostructured coatings may be applied to valve components (i.e., balls and seats) via thermal spray processes, wherein the feedstock powder used in thermal spray may be composed, for example, of a chromium oxide composite material that meets the protective requirements against the wear and corrosion of the valve service. The thermal spray process may involve, but is not limited to, either a plasma spray or high-velocity combustion process. Through their enhanced properties, the coatings can provide superior reliability and extended life to components such as valves. Also disclosed are methods for producing the coatings, and correspondingly coated components. | 2012-03-29 |
20120074343 | TAP | 2012-03-29 |
20120074344 | FLUID PASSAGE VALVE - A fluid passage valve is equipped with a valve body which is disposed rotatably through first and second shafts, a movable seat having a communication hole therein, and an elastic member that urges the movable seat toward a side opposite from the valve body. The first and second shafts are assembled and installed on the valve body such that an axis thereof is disposed at a position offset from a center of curvature of a spherical surface portion of the valve body. The fluid passage valve is placed in a valve-closed condition by the spherical surface portion abutting against a seating surface and closing the communication hole, and is placed in an open condition by the valve body separating away from the movable seat and thereby opening the communication hole. | 2012-03-29 |
20120074345 | VALVE ASSEMBLY - The present invention is directed to a pressure-responsive valve assembly which functions in the nature of a check valve to control fluid flow across the assembly. The assembly includes a valve body which defines first and second internal flow passages, and includes a valve seat through which at least one flow port extends for joining the first and second passages in fluid communication with each other. A flexible, resiliently deformable valve member is positioned in operative association with the valve seat, and can be deflected, in response to a sufficient pressure differential, to move out of sealing engagement with the valve seat, to thereby permit fluid flow through the valve assembly. | 2012-03-29 |
20120074346 | Corrective measures and devices for bi-stable flow phenomena in fluid valves - In accordance with an example embodiment of the present invention, a valve is disclosed. The valve includes a valve body, a seat, a poppet, and a shaped portion. The valve body has an inlet portion and an outlet portion. The seat is between the inlet portion and the outlet portion. The poppet is proximate the seat. The poppet is adapted to modulate fluid flow between the inlet portion and the outlet portion. The shaped portion is downstream of the seat. The shaped portion is adapted to direct fluid flow, reduce cross flow interference, and allow for substantially parallel fluid flow jets at a majority of the inlet portion and the outlet portion when fluid is flowing through the valve. | 2012-03-29 |
20120074347 | INFRARED ATTENUATED POLYMERIC FOAM INSULATION WITH FLAME RETARDANT PERFORMANCE - Prepare a polymer foam by extrusion foaming a foamable thermoplastic polymer composition using a blowing agent containing 3 to 5 weight-percent (wt %) carbon dioxide, up to 5 wt % alcohol having 2-3 carbons, up to 0.7 wt % water and up to 2.5 weight-percent iso-butane; wherein the blowing agent comprises at least 0.1 wt % of water and/or alcohol having 2-3 carbons; two to five wt % infrared attenuating agent selected from petcokes and 100-700 nanometers size carbon black; 2.5 to 3.5 wt % brominated flame retardant; and at least 0.1 wt % of epoxy stabilizer wherein the resulting polymeric foam is characterized by having a density in a range of 30 to 37 kilograms per cubic meter, a unimodal cell size distribution, an average cell size of 0.15 to 0.4 millimeters, a thermal conductivity in a range of 28 to 35 milliwatts per meter*Kelvin and that passes the German B2 fire test. | 2012-03-29 |
20120074348 | HIGH DURABILITY MAGNETORHEOLOGICAL FLUIDS - A magnetorheological fluid comprising a mixture of soft and hard iron particles, an organic based carrier fluid, and optional additives such as anti-friction, anti-wear, or surfactants unexpectedly have improved durability when used in devices for control vibration and/or noise, for example, shock absorbers, elastomeric mounts, dampers, and the like. | 2012-03-29 |
20120074349 | ASCORBIC ACID, TEREPHTHALATE AND NITROMETHANE STABILIZERS FOR FLUOROOLEFINS - The present disclosure relates to compositions comprising at least one fluoroolefin and an effective amount of a stabilizer comprising at least one ascorbic acid, terephthalate, or nitromethane, or mixtures thereof. The stabilized compositions may be useful in cooling apparatus, such as refrigeration, air-conditioning, chillers and heat pumps, as well as in applications as foam blowing agents, solvents, aerosol propellants, fire extinguishants, and sterilants. | 2012-03-29 |
20120074350 | Apparatus, system and method of providing a de-icing saline solution for residential use - A residential de-icing apparatus, system and method. The apparatus, system and method include a first saline solution having a salinity in a range of 150-360 ppt, a residential container having a volume in a range of 2-5 gallons, a second saline solution resident in the residential container and having a salinity in a range of 30 ppt-250 ppt, wherein the second saline solution results from a mixing of the first saline solution with a volume of water, and a hand-held output nozzle physically associated with the residential container for dispersing the second saline solution at a rate in a range of 6-12 gallons per ¼ mile. | 2012-03-29 |
20120074351 | Positive Electrode Materials Combining High Safety and High Power in a Li Rechargeable Battery - The invention relates to a Li | 2012-03-29 |
20120074352 | WETTABLE HYDROGEL CONTACT LENS AND METHOD FOR PRODUCING SAME - Disclosed is a hydrogel contact lens which has improved and long-lasting wettability in the surface and inner structures, while exhibiting excellent contamination resistance, shape stability and mechanical strength. Also disclosed is a method for producing the hydrogel contact lens. The wettable hydrogel contact lens is characterized by containing an ionic hydrophilic polymer which is a compound having a hydroxy group and an anionic group. The method for producing a hydrogel contact lens is characterized in that a constituent component of the hydrogel contact lens is a copolymer containing at least a cationic monomer and an anionic monomer, and in that the method comprises a step wherein counter ions of the monomers form ionic bonds and a step wherein an ionic hydrophilic polymer, which is a compound having a hydroxy group and an anionic group, is contained. | 2012-03-29 |
20120074353 | USE OF MOLECULES HAVING ASSOCIATIVE GROUPS AS HARDENERS FOR THERMOSETTING RESINS - The present invention pertains to the field of thermosetting or thermoset polymers mainly used as materials, coatings, or adhesives. The invention more specifically relates to the use of specific molecules having associative groups including a nitrogen heterocycle as a hardener or co-hardener of thermosetting polymers. | 2012-03-29 |
20120074354 | METHOD FOR THE RESTABILIZATION OF (METH)ACRYLIC MONOMERS - A process for replacing the stabilization of (meth)acrylic monomers, wherein phenothiazine is removed from phenothiazine-containing (meth)acrylic monomers by adsorption on activated carbon, and then a moderately active polymerization inhibitor is optionally added. | 2012-03-29 |
20120074355 | FIVE-RING LIQUID CRYSTAL COMPOUND, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - The invention provides a liquid crystal compound having a high stability to heat, light or the like, a nematic phase in a wide temperature range, a small viscosity, a suitable optical anisotropy (especially, a relatively small optical anisotropy), a large elastic constant K | 2012-03-29 |
20120074356 | SCINTILLATOR - [Problems to be Solved] | 2012-03-29 |
20120074357 | CATALYST FOR REFORMING HYDROCARBON GAS, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SYNTHESIZED GAS - A catalyst for reforming a hydrocarbon gas using carbon dioxide and/or water vapor to react while restraining the deposition of carbon contains a NiO—Sr | 2012-03-29 |
20120074358 | Anticorrosion additives for manufacturing processes, a process for preparation thereof and use thereof - The present invention relates to novel anticorrosion additives for manufacturing processes, comprising at least one triazole and the reaction product of at least one alkylene glycol and at least one carboxylic anhydride, to a process for preparation thereof and to the use thereof for corrosion protection for aluminium and/or aluminium alloys. | 2012-03-29 |
20120074359 | PARTICLE FOR DISPLAY MEDIUM AND INFORMATION DISPLAY PANEL USING THE PARTICLE FOR DISPLAY MEDIUM - A particle for a display medium that can be used in an information display panel in which a display medium having an optical reflectivity and an electrification property is sealed between two substrates, at least one of which substrates is transparent; electrification is applied to the display medium to move the display panel, thereby to display an information image, in which an external additive is attached to a surface of a mother particle serving as a main body of a particle, and, the external additive has a first external additive particle having a smaller particle diameter formed such that an average particle diameter falls in a range of 7 nm to 8 nm and 80 wt % or more of the entire first external additive particle has a particle diameter falling within ±2 nm from the average particle diameter, and a second external additive particle having a larger particle diameter formed such that 10 wt % or lower of the entire second external additive particle has a particle diameter of 10 nm or lower. | 2012-03-29 |
20120074360 | Organic Electronic Material, Ink Composition Containing Same, and Organic Thin Film, Organic Electronic Element, Organic Electroluminescent Element, Lighting Device, and Display Device Formed Therewith - Provided are: an organic electronic material which can be easily multilayered and that can be used in substrates, such as resin, that cannot be processed at high temperatures; an ink composition containing the same; an organic thin film formed using said organic electronic material or said ink composition; and an organic electronic element and an organic EL element that are formed using said organic thin film and that have a superior luminous efficacy and emission lifespan than conventional elements. Specifically, provided are: an organic electronic material that is characterized by containing an oligomer or a polymer having a structure that branches into three or more directions and has at least one polymerizable substituent; an ink composition containing said organic electronic material; and an organic thin film prepared using the aforementioned organic electronic material. Further, provided are an organic electronic element and an organic electroluminescent element containing said organic thin film. | 2012-03-29 |
20120074361 | SEMICONDUCTOR NANOPARTICLES AND METHOD FOR PRODUCING SAME - Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10 | 2012-03-29 |
20120074362 | CHAIN AND LEVER POST PULLER SYSTEMS - A chain and lever post puller system for pulling 2 inch by 4 inch stakes from the ground. The apparatus may also pull round posts or tee-posts with a minimum of effort and with no prior digging. The chain and lever post puller system is a first class lever, requires no heavy equipment or hydraulics, and is easily transportable by hand. The puller comprises a vertical column to which the pivot lever is removably connected via a hinge, which also forms the fulcrum for the pivot lever. A first end of a chain is attached opposite the handle to the end of the pivot lever, and a self-tightening post grip is attached to the second end of the chain. A downward force is applied to the first end of the pivot lever when the post grip is attached to a stake to remove the stake via mechanical advantage. | 2012-03-29 |
20120074363 | Hand Puller and a Central Shaft Structure Thereof - A hand puller and a central shaft structure thereof contains a base including a first and a second sides having a fixed pillar with a fixed rope and a controlling portion with an axial hole respectively, and including a removable retaining member; a pulling member including a first and a second segments having an axial connecting portion with an axial bore and a holding portion individually, and including a movable rod; two ratchets, each including plural teeth and an orifice to match with the central shafts; wherein the retaining member and the movable rod contact with the ratchet respectively, the central shaft is solid, made of a metal bar material, and includes two ends between which an outer surface is defined, and each end of the central shaft includes a limiting member higher than the outer surface so that the base and the ratchets are positioned on the central shafts. | 2012-03-29 |
20120074364 | FLAT BELT CLAMPING PULLEY - A flat belt clamping pulley securely clamps the end of a flat belt to the pulley without requiring fastener holes being provided through the end of the flat belt. The design of the flat belt clamping pulley enables the pulley to be economically constructed without requiring difficult or troublesome machining steps. | 2012-03-29 |
20120074365 | POWER WINCH - A power winch for retrieving a load using a strap comprising: a motor, where the motor includes a drive shaft, where the drive shaft extends from the motor and a gear coupling at the end of the drive shaft; at least one gear reducer; at least one drive shaft, where said drive shaft engages the at least one gear reducer; a gear extension in each drive shaft; and four rollers that engage the gears of the at least one drive shaft where the rollers are designated as a first top roller, the second top roller, a first bottom roller, and a second bottom roller, where the first top roller and first bottom roller are aligned in a first vertical plane and a second top roller and second bottom roller are aligned in a second vertical plane. The four rollers are positioned at four different respective vertical heights. A strap interweaves through the four rollers that allows for the movement of the strap through the rollers powered by the motor. In one exemplary embodiment, the power winch further includes a winch drum, where the winch drum is used to collect the strap that is interweaved through the four rollers. | 2012-03-29 |
20120074366 | FALL PREVENTION BRACKET - A safety guard rail system designed to be installed on a wall front-side during construction to provide worker forward fall protection. The embodiments disclosed utilize portable brackets attachable to anchors that have been incorporated into the wall structure during construction. As construction of the wall advances upwards, individual brackets can be easily lifted and coupled to the anchors to provide a secure support for horizontal railings. When the brackets are no longer necessary, the anchors can remain in place to later secure or be covered by façade, or they can be sheared off or bent parallel to the wall. The safety guard rail system of the subject invention provides the advantages of easy assembly and portability during construction. | 2012-03-29 |
20120074367 | COUNTER DOPING COMPENSATION METHODS TO IMPROVE DIODE PERFORMANCE - A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming a memory element coupled in series with the diode. Other aspects are also provided. | 2012-03-29 |
20120074368 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device having a diode and a transistor connected in series, which prevents carriers from going from the diode into the transistor, thereby reducing the possibility of transistor deterioration. A structure to annihilate carriers from the diode is provided between a channel layer of the transistor and a diode semiconductor layer of the diode where the carriers are generated. | 2012-03-29 |
20120074369 | NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY ELEMENT ARRAY - A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 02012-03-29 | |
20120074370 | PHASE CHANGE MEMORY STRUCTURES AND METHODS - Methods, devices, and systems associated with phase change memory structures are described herein. One or more embodiments of the present disclosure can reduce thermal crosstalk associated with phase change memory cells, which can provide various benefits including improved data reliability and retention and decreased read and/or write times, among various other benefits. One or more embodiments can reduce the number of processing steps associated with providing local interconnects to phase change memory arrays. | 2012-03-29 |
20120074371 | RESISTANCE VARIABLE MEMORY DEVICE WITH NANOPARTICLE ELECTRODE AND METHOD OF FABRICATION - A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle. | 2012-03-29 |
20120074372 | MEMRISTORS WITH AN ELECTRODE METAL RESERVOIR FOR DOPANTS - A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided. | 2012-03-29 |
20120074373 | Electronic Devices, Memory Devices and Memory Arrays - Some embodiments include electronic devices having two capacitors connected in series. The two capacitors share a common electrode. One of the capacitors includes a region of a semiconductor substrate and a dielectric between such region and the common electrode. The other of the capacitors includes a second electrode and ion conductive material between the second electrode and the common electrode. At least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Some embodiments include memory cells having two capacitors connected in series, and some embodiments include memory arrays containing such memory cells. | 2012-03-29 |
20120074374 | CONDUCTIVE PATH IN SWITCHING MATERIAL IN A RESISTIVE RANDOM ACCESS MEMORY DEVICE AND CONTROL - A non-volatile memory device structure. The device structure includes a first electrode, a second electrode, a resistive switching material comprising an amorphous silicon material overlying the first electrode, and a thickness of dielectric material having a thickness ranging from 5 nm to 10 nm disposed between the second electrode and the resistive switching layer. The thickness of dielectric material is configured to electrically breakdown in a region upon application of an electroforming voltage to the second electrode. The electrical breakdown allows for a metal region having a dimension of less than about 10 nm by 10 nm to form in a portion of the resistive switching material. | 2012-03-29 |
20120074375 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 2012-03-29 |
20120074376 | NONVOLATILE MEMORY ELEMENTS WITH METAL DEFICIENT RESISTIVE SWITCHING METAL OXIDES - Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal. | 2012-03-29 |
20120074377 | SEMICONDUCTOR MEMORY - Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer. | 2012-03-29 |
20120074378 | MEMORY ELEMENT HAVING ELASTICALLY DEFORMABLE ACTIVE REGION - A memory element is provided that includes a first electrode, a second electrode, and an active region disposed between the first electrode and the second electrode, wherein at least a portion of the active region comprises an elastically deformable material, and wherein deformation of the elastically deformable material causes said memory element to change from a lower conductive state to a higher conductive state. A multilayer structure also is provided that includes a base and a multilayer circuit disposed above the base, where the multilayer circuit includes at least of the memory elements including the elastically deformable material. | 2012-03-29 |
20120074379 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes: a substrate being a monocrystalline structure, comprising a plurality of recesses; and a plurality of first light-emitting stacks formed in the recesses respectively. | 2012-03-29 |
20120074380 | WHITE LIGHT EMITTING DIODE - A white light emitting diode (LED) and method for forming the white LED are provided, wherein a semiconductor material is formed directly with a epitaxial method on a GaN epitaxial structure. The semiconductor material is a doped II-VI semiconductor compound with a broad FWHM (Full Width at Half Maximum) compared to conventional phosphor, can provide a white LED with better color rendering. | 2012-03-29 |
20120074381 | RE-EMITTING SEMICONDUCTOR CONSTRUCTION WITH ENHANCED EXTRACTION EFFICIENCY - A stack of semiconductor layers ( | 2012-03-29 |
20120074382 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURE OF THE SAME - Disclosed is a light emitting device. The light emitting device includes a substrate, a semiconductor layer on the substrate, and an electrode on the semiconductor layer, wherein the substrate has at least one side surface having a predetermined tilt angle with respect to a bottom surface of the substrate, wherein the predetermined tilt angle is an obtuse angle, and wherein a side surface of the semiconductor layer disposes vertically. | 2012-03-29 |
20120074383 | DEVICE OF LIGHT-EMITTING DIODE - A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate. | 2012-03-29 |
20120074384 | PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES - Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed. | 2012-03-29 |
20120074385 | Semiconductor Devices And Methods of Manufacturing The Same - A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer. | 2012-03-29 |
20120074386 | Non-planar quantum well device having interfacial layer and method of forming same - Techniques are disclosed for forming a non-planar quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), and a quantum well layer. A fin structure is formed in the quantum well structure, and an interfacial layer provided over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure. | 2012-03-29 |
20120074387 | MICROELECTRONIC TRANSISTOR HAVING AN EPITAXIAL GRAPHENE CHANNEL LAYER - The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to forming a graphene layer as a channel layer for a microelectronic transistor. | 2012-03-29 |
20120074388 | Organic Light-Emitting Display Device and Method of Manufacturing the Same - In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device includes: a first insulating layer, a transparent conductive layer, and a second insulating layer which are sequentially formed on a substrate; a thin film transistor including an active layer formed under the first insulating layer, a gate electrode including a part of the transparent conductive layer as a lower electrode layer, and source and drain electrodes connected to both sides of the active layer; an organic light-emitting device including a sequentially stacked structure comprising a part of the transparent conductive layer as a pixel electrode, an intermediate layer which includes an emission layer, and an opposite electrode; and a capacitor including a first electrode and a second electrode, which includes a part of the transparent conductive layer as a lower electrode layer; wherein the transparent conductive layer and the second insulating layer include a hole. | 2012-03-29 |
20120074389 | METAL COMPLEX COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE INCLUDING THE SAME - Disclosed are a metal complex compound represented by the following Chemical Formula 1 or 3, and an organic light emitting diode device including the same. | 2012-03-29 |
20120074390 | Light-Emitting Element and Electronic Device - An object is to provide a light-emitting element with high emission efficiency which includes a novel carbazole derivative that has a wide energy gap and can be used for a transport layer or a host material in a light-emitting element. A carbazole derivative in which the 4-position of dibenzothiophene or dibenzofuran is bonded to the 2- or 3-position of carbazole has been able to be provided by use of the carbazole derivative. Further, a light-emitting element having high emission efficiency has been able to be provided by use of the carbazole derivative. | 2012-03-29 |
20120074391 | DISPLAY DEVICE - A pixel unit having two or more pixels different in emission color is provided with lenses in such a manner that the difference of the angular dependence of brightness in organic EL elements for every emission color of the pixels becomes small. | 2012-03-29 |
20120074392 | Tandem White OLED - Organic electroluminescent devices and components containing the organic electroluminescent devices are provided herein. The organic electroluminescent devices include a substrate, a first light emitting unit, a second light emitting unit, a first electrode, and a second electrode. The light emitting units are positioned between the first and second electrode. The light emitting units have light emitting regions containing various emitter materials. | 2012-03-29 |
20120074393 | SEMICONDUCTORS BASED ON DIKETOPYRROLOPYRROLES - The present invention relates to 1,4-diketopyrrolo[3,4-c]pyrrole (DPP) derivatives of the below formula | 2012-03-29 |
20120074394 | Polycyclic Aromatic Molecular Semiconductors and Related Compositions and Devices - Disclosed are new semiconductor materials prepared from polycyclic aromatic compounds. Such compounds can exhibit high carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions. | 2012-03-29 |
20120074395 | ORGANIC ELECTROLUMINESCENT ELEMENT - Provided is an organic EL device, including: an anode; a cathode; and an organic thin-film layer provided between the anode and the cathode, in which: the organic thin-film layer has a light emitting layer containing a host material and a light emitting material, and a hole transporting layer; and the hole transporting layer has a first hole transporting layer and a second hole transporting layer in the stated order from the anode; the first hole transporting layer contains a specific amine compound; and the second hole transporting layer contains a specific amine compound; or the hole transporting layer has a layer containing a specific electron acceptable compound and a first hole transporting layer; and the first hole-transporting layer contains a specific amine compound. The organic EL device has a reduced driving voltage, high luminous efficiency, and excellent practicality. | 2012-03-29 |
20120074396 | ELECTROACTIVE MATERIALS - There is provided an electroactive material having Formula I | 2012-03-29 |
20120074397 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic electroluminescence display includes a first electrode and an auxiliary wire each either on or in a substrate. A luminescent layer is over the first electrode, and a hole transport layer is between the luminescent layer and the first electrode. The hole transport layer extends from over the first electrode to over the auxiliary wire. A second electrode is over the luminescent layer and extends from over the first electrode to over the auxiliary wire. A metal layer is over the auxiliary wire between the hole transport layer and the second electrode. The second electrode and the auxiliary wire are electrically connected via the hole transport layer and the metal layer. The metal layer comprises a metal, wherein a difference of a work function value of the metal minus an absolute value of an energy level of a lowest unoccupied molecular orbit of the hole transport layer is at most approximately 0.5 eV. | 2012-03-29 |
20120074398 | ORGANIC EL ILLUMINANT, ORGANIC EL ILLUMINATING DEVICE, AND METHOD FOR FABRICATING ORGANIC EL ILLUMINANT - An organic EL illuminant ( | 2012-03-29 |
20120074399 | Method of making oxide thin film transistor array, and device incorporating the same - Certain example embodiments relate to methods of making oxide thin film transistor arrays (e.g., IGZO, amorphous or polycrystalline ZnO, ZnSnO, InZnO, and/or the like), and devices incorporating the same. Blanket layers of an optional barrier layer, semiconductor, gate insulator, and/or gate metal are disposed on a substrate. These and/or other layers may be deposited on a soda lime or borosilicate substrate via low or room temperature sputtering. These layers may be later patterned and/or further processed in making a TFT array according to certain example embodiments. In certain example embodiments, all or substantially all TFT processing may take place at a low temperature, e.g., at or below 150 degrees C., until a post-annealing activation step, and the post-anneal step may take place at a relatively low temperature (e.g., 200-250 degrees C.). | 2012-03-29 |
20120074400 | MULTIPLE EDGE ENABLED PATTERNING - Provided is an alignment mark having a plurality of sub-resolution elements. The sub-resolution elements each have a dimension that is less than a minimum resolution that can be detected by an alignment signal used in an alignment process. Also provided is a semiconductor wafer having first, second, and third patterns formed thereon. The first and second patterns extend in a first direction, and the third pattern extend in a second direction perpendicular to the first direction. The second pattern is separated from the first pattern by a first distance measured in the second direction. The third pattern is separated from the first pattern by a second distance measured in the first direction. The third pattern is separated from the second pattern by a third distance measured in the first direction. The first distance is approximately equal to the third distance. The second distance is less than twice the first distance. | 2012-03-29 |
20120074401 | TEST PATTERN FOR DETECTING PIPING IN A MEMORY ARRAY - A method of detecting manufacturing defects at a memory array may include disposing an active area of a first width in communication with a first conductive member of the memory array to define a grounded conductive member, disposing an isolation structure of a second width in communication with a second conductive member of the memory array to define a floating conductive member, and providing an alternating arrangement of floating and grounded conductive members including arranging a plurality of the grounded and floating conductive members adjacent to each other to define a sequence of alternating floating and grounded conductive members. A corresponding test device is also provided. | 2012-03-29 |
20120074402 | PACKAGING STRUCTURE - This invention relates to a packaging structure and method for manufacturing the packaging structure. The packaging structure comprises a substrate film, a plurality of chips, a compound resin layer and a support layer. The substrate film is formed with circuits having a plurality of terminals exposed from a solder mask. The chips, each of which has a plurality of pads, under bump metals (UBMs) formed on the pads, and composite bumps disposed onto the UBMs, are bonded onto the substrate film to form the first tape. The second tape comprises the support layer and the compound resin layer formed on the support layer. The first tape and the second tape are both in reel-form and are expanded towards a pair of rollers to be heated and pressurized for encapsulating the chips. | 2012-03-29 |
20120074403 | METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE - The present invention is to provide GaN crystal growing method for growing a GaN crystal with few stacking faults on a GaN seed crystal substrate having a main surface inclined at an angle of 20° to 90° from the (0001) plane, and also to provide a GaN crystal substrate with few stacking faults. A method for growing a GaN crystal includes the steps of preparing a GaN seed crystal substrate | 2012-03-29 |
20120074404 | SUPPORTING SUBSTRATE, BONDED SUBSTRATE, METHOD FOR MANUFACTURING SUPPORTING SUBSTRATE, AND METHOD FOR MANUFACTURING BONDED SUBSTRATE - Provided is a supporting substrate ( | 2012-03-29 |
20120074405 | Process for the Simultaneous Deposition of Crystalline and Amorphous Layers with Doping - One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics. | 2012-03-29 |
20120074406 | PHOTOSENSOR - A photosensor includes a photosensor array in which plural photosensor pixels are arranged in a matrix form and a backlight arranged below the photosensor array. The photosensor array includes a surface light-shielding film (for example, Al film), and the surface light-shielding film includes an incident hole through which light from an opposite side to the backlight is incident on the respective photosensor pixels, and a passage hole which is provided around the incident hole and irradiates the opposite side with irradiation light from the backlight. | 2012-03-29 |
20120074407 | Semiconductor device and method for manufacturing the same - An object is to provide a semiconductor device having a novel structure in which a transistor including an oxide semiconductor and a transistor including a semiconductor material other than an oxide semiconductor are stacked. The semiconductor device includes a first transistor, an insulating layer over the first transistor, and a second transistor over the insulating layer. In the semiconductor device, the first transistor includes a first channel formation region, the second transistor includes a second channel formation region, the first channel formation region includes a semiconductor material different from a semiconductor material of the second channel formation region, and the insulating layer includes a surface whose root-mean-square surface roughness is less than or equal to 1 nm. | 2012-03-29 |
20120074408 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device includes: a thin-film transistor (TFT) including an active layer, a gate electrode including a gate bottom electrode and a gate top electrode, a source electrode, and a drain electrode; an organic electroluminescent (EL) device electrically connected to the TFT and including a stack of a pixel electrode at the same layer as and including the same material as the gate bottom electrode, an intermediate layer including an emissive layer, and a counter electrode; a first pad electrode at the same layer as and including the same material as the gate bottom electrode; and a second pad electrode including a second pad bottom electrode at the same layer as and including the same material as the gate bottom electrode, and a second pad top electrode at the same layer as and including the same material as the gate top electrode. | 2012-03-29 |
20120074409 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - A light emitting device includes: a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a light emitting layer provided between the first electrode and the second electrode; a capacitor having a third electrode formed in a position overlapping the light emitting element and an insulating layer provided between the first and third electrodes; a first drive transistor disposed on a first side of the first electrode and having a gate electrode; and a second drive transistor disposed on a second side of the first electrode and having a gate electrode connected to the gate electrode of the first drive transistor via the third electrode. | 2012-03-29 |
20120074410 | FUSED BITHIOPHENE-VINYLENE POLYMERS - A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N—R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 R | 2012-03-29 |
20120074411 | Organic light emitting diode display and manufacturing method thereof - Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate in the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region. | 2012-03-29 |
20120074412 | Organic Light-Emitting Display Device and Method of Manufacturing the Same - In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device comprises: an active layer of a thin film transistor which includes a semiconductor material, and which is formed on a substrate; a lower electrode of a capacitor which includes a semiconductor material doped with ion impurities, and which is formed on the substrate; a first insulating layer formed on the substrate so as to cover the active layer and the lower electrode; a first gate electrode which is a transparent conductive material, and which is formed on the first insulating layer; a second gate electrode which is a metal, and which is formed on the first gate electrode; an upper electrode of a capacitor which is formed on the first insulating layer and includes a transparent conductive material; source and drain electrodes of a thin film transistor which are electrically connected to the active layer; a pixel electrode formed on the first insulating layer, which is a semi-permeable metal electrically connected to one of the source and drain electrodes; an intermediate layer formed on the pixel electrode and including an organic emission layer; and an opposite electrode facing the pixel electrode with the intermediate layer therebetween. | 2012-03-29 |
20120074413 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes an active layer of a thin film transistor (TFT) formed on a substrate; a gate electrode of the TFT, wherein a first gate electrode including a transparent conductive material, a first insulating layer, and a second gate electrode are sequentially stacked; a pixel electrode disposed on the first insulating layer and including the transparent conductive material; a source electrode and a drain electrode of the TFT, a second insulating layer disposed between the source electrode and the drain electrode; a light reflector including the same material as the source electrode and the drain electrode, and disposed on the pixel electrode; an emission layer disposed on top of the pixel electrode and surrounded by an inner side of the light reflector; and a counter electrode facing towards the pixel electrode, wherein the emission layer is disposed between the pixel electrode and the counter electrode. | 2012-03-29 |
20120074414 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device comprises: a substrate; an active layer disposed on the substrate; a first insulating layer disposed on the active layer; a gate electrode disposed on the first insulating layer; a pixel electrode disposed on the first insulating layer; source and drain electrodes electrically insulated from the gate electrode and electrically connected to the active layer; an intermediate layer disposed on the pixel electrode, wherein the intermediate layer comprises an organic emission layer; and an opposite electrode disposed on the intermediate layer, wherein the pixel electrode is connected to the source electrode or the drain electrode, wherein the gate electrode comprises a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer that are sequentially stacked, and wherein the second and third conductive layers comprises a first oxidation-reduction potential difference therebetween, and the first and third conductive layers comprises a second oxidation-reduction potential difference therebetween, and the first oxidation-reduction potential difference is less than the second oxidation-reduction potential difference. | 2012-03-29 |
20120074415 | LIQUID CRYSTAL DISPLAY DEVICE - Provided is a liquid crystal display device, in which: the gate lines include a first gate line and a second gate line for respectively outputting the scanning signals at two different scanning timings for each of scanning lines; and a unit pixel for color display, constituted by three pixels corresponding to a red (R) pixel, a green (G) pixel, and a blue (B) pixel arranged side by side, is formed in a region surrounded by the first gate line, the second gate line, and the drain lines, and the three pixels corresponding to the red (R) pixel, the green (G) pixel, and the blue (B) pixel are arranged in matrix for the each unit pixel. | 2012-03-29 |
20120074416 | LIQUID CRYSTAL DISPLAY AND PANEL THEREFOR - The present invention provides a liquid crystal display having excellent visibility. | 2012-03-29 |
20120074417 | Method of Bonding Wafers - A method of bonding wafers with an aluminum-germanium bond includes forming an aluminum layer on a first wafer, and a germanium layer on a second wafer, and implanting the germanium layer with non-germanium atoms prior to forming a eutectic bond at the aluminum-germanium interface. The wafers are aligned to a desired orientation and the two layers are held in contact with one another. The aluminum-germanium interface is heated to a temperature that allows the interface of the layers to melt, thus forming a bond. A portions of the germanium layer may be removed from the second wafer to allow infrared radiation to pass through the second wafer to facilitate wafer alignment. | 2012-03-29 |
20120074418 | SEMICONDUCTOR DEVICE - NTFT of the present invention has a channel forming region, n-type first, second, and third impurity regions in a semiconductor layer. The second impurity region is a low concentration impurity region that overlaps a tapered potion of a gate electrode with a gate insulating film interposed therebetween, and the impurity concentration of the second impurity region increases gradually from the channel forming region to the first impurity region. And, the third impurity region is a low concentration impurity region that does not overlap the gate electrode. Moreover, a plurality of NTFTs on the same substrate have different second impurity region lengths, respectively, according to difference of the operating voltages. That is, when the operating voltage of the second TFT is higher than the operating voltage of the first TFT, the length of the second impurity region is longer on the second TFT than on the first TFT. | 2012-03-29 |
20120074419 | LIGHT EMITTING DEVICE AND ELECTRONIC EQUIPMENT - A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are connected such that the drain current of the first transistor is kept in proportion to the drain current of the second transistor irrespective of the load resistance value. The drain current of the first transistor is controlled by a driving circuit in accordance with a video signal and the drain current of the second transistor is caused to flow into an OLED, thereby controlling the OLED drive current and the luminance of the OLED. | 2012-03-29 |
20120074420 | Organic light emitting diode display and manufacturing method thereof - An organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer on the substrate; a gate insulating layer covering the semiconductor layer; a gate electrode formed in the gate insulating layer and overlapping the semiconductor layer; a pixel electrode formed in a pixel area over the gate insulating layer; an interlayer insulating layer covering the gate electrode and the gate insulating layer, and exposing the pixel electrode through a pixel opening; a source electrode and a drain electrode formed in the interlayer insulating layer and connected to the semiconductor layer; and a barrier rib covering the interlayer insulating layer, the source electrode, and the drain electrode, and the drain electrode contacts a side wall of the pixel opening and is connected to the pixel electrode. Such an OLED display may have an improved aperture ratio. | 2012-03-29 |
20120074421 | THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A source wire is below the passivation film. A gate wire and a relay electrode are above the passivation film. The gate wire is electrically connected to a gate electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the gate wire and the relay electrode and not electrically connected between the gate wire and the relay electrode. The conductive oxide film covers an end portion of the source wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film. | 2012-03-29 |
20120074422 | THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A gate wire is below the passivation film. A source wire and a relay wire are above the passivation film. The source wire is electrically connected to a source electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the source wire and the relay electrode and not electrically connected between the source wire and the relay electrode. The conductive oxide film covers an end portion of the gate wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film. | 2012-03-29 |
20120074423 | EL DISPLAY PANEL, EL DISPLAY APPARATUS, AND METHOD OF MANUFACTURING EL DISPLAY PANEL - An EL display panel includes an organic EL device and a thin film semiconductor unit. The organic EL device includes a lower electrode, an organic light-emitting layer, and an upper electrode. The thin film semiconductor unit includes a first gate electrode, a gate insulating film, a first source electrode, a second drain electrode formed in a same layer as the first source electrode, a first power supply line formed in a same layer as the second drain electrode, and a first interlayer insulating film formed on the first source electrode and the second drain electrode. A gate line connected to the first gate electrode, a second power supply line formed in a same layer as the gate line and connected to the first power supply line, and an auxiliary line formed in a same layer as the second power supply line and connected to the upper electrode are included. | 2012-03-29 |
20120074424 | GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a conductive heat dissipation substrate (that is, a thermal conductive substrate); an GaN-based multi-layer arranged on the heat dissipation substrate; and a Schottky electrode arranged on the GaN-based multi-layer. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used. | 2012-03-29 |
20120074425 | GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE - Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density. | 2012-03-29 |
20120074426 | FIELD-EFFECT TRANSISTOR - A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an insulating film formed directly on the gate electrode to cover at least one of the first and second sidewall surfaces, first and second ohmic electrodes formed on the first and second sides, respectively, a passivation film including a first portion extending from the first ohmic electrode toward the gate electrode to cover a surface area between the first ohmic electrode and the gate electrode and a second portion extending from the second ohmic electrode toward the gate electrode to cover a surface area between the second ohmic electrode and the gate electrode, wherein the insulating film is in direct contact with at least the first and second passivation film portions, and has a composition different from that of the passivation film. | 2012-03-29 |
20120074427 | METHOD FOR MANUFACTURING A LAYER OF GALLIUM NITRIDE OR GALLIUM AND ALUMINUM NITRIDE - The present invention relates to a crack-free monocrystalline nitride layer having the composition AlxGa | 2012-03-29 |